JPH0513922A - Etching inspection plate - Google Patents

Etching inspection plate

Info

Publication number
JPH0513922A
JPH0513922A JP16267991A JP16267991A JPH0513922A JP H0513922 A JPH0513922 A JP H0513922A JP 16267991 A JP16267991 A JP 16267991A JP 16267991 A JP16267991 A JP 16267991A JP H0513922 A JPH0513922 A JP H0513922A
Authority
JP
Japan
Prior art keywords
etching
inspection
masking part
pattern
masking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16267991A
Other languages
Japanese (ja)
Inventor
Tsutomu Watabe
勉 渡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP16267991A priority Critical patent/JPH0513922A/en
Publication of JPH0513922A publication Critical patent/JPH0513922A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To quantitatively detect the excess and deficiency of etching by a method wherein etching is conducted in the same condition as the etching treatment process of a manufactured substrate, and the etching condition is observed. CONSTITUTION:An etching inspection plate, on which an etching pattern is formed, is put in the etching treatment process, and the inspection masking part after etching treatment and an inspection non-masking part are observed. At this time, when the widths 1a to 4a, which change microscopically, are smaller than the measured value, it means overetching, and the microscopically changing widths 1a to 4a of the non-masking part 5 are larger than the prescribed width, it is judged as insufficient etching. The excess and shortage of etching can be known by the prescribed value of the position where the width of the masking part 2 or the non-masking part 5 becomes zero. The detection of the position, where the width of the masking part 2 or the non- masking part 5 becomes zero, can easily be observed using an optical microscope.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は,電子回路基板,薄膜形
成技術等において用いられるエッチング処理の過不足に
よる誤差を検出するエッチング検査板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching inspection plate for detecting an error due to an excess or deficiency of an etching process used in an electronic circuit board, a thin film forming technique and the like.

【0002】[0002]

【従来の技術】絶縁体基板上に貼設された銅箔をウエッ
トエッチングにより所定のパターンに形成する電子回路
配線基板にはじまるエッチングによるパターン形成技術
も,小型化,高集積度の要求にともなって,いまや電子
顕微鏡下の状態にまで微細化されるに至っている。従っ
て,その形成パターンの形成精度の測定は容易でなく,
電子顕微鏡観測や電子計測装置など高価な装置に頼らざ
るをえない状況にある。その測定装置の例を図2〜図4
に示す。これは図2に示すように基板上に形成された微
細なパターンの矢印方向の寸法誤差を測定する例であ
る。図3に示すように,パターン形成された基板30上
を電子線またはレーザー光線のビームを投射するビーム
ガン32を等速で移動させ,基板30からの反射を検出
器33で受けて基板30上に形成されたパターン31の
寸法精度を測定する。投射ビームが基板30上のパター
ン31が形成されていない部分を通過するときには,投
射ビームの反射に変化はなく,パターン31のエッジに
おいてのみ乱反射がおきるので,検出器33への入力が
変化する。ビームガン32が基板30上で矢印方向に走
査したときの検出器33の入力信号は図4に示されるよ
うになり,反射強度が急激に変化する点がパターン31
のエッジ位置であり,従って,この変化点の距離または
時間を測ることにより,パタ─ン31の寸法が測定でき
る。
2. Description of the Related Art A pattern forming technique by etching, which starts with an electronic circuit wiring substrate, in which a copper foil adhered on an insulating substrate is formed into a predetermined pattern by wet etching, is also required to be compact and highly integrated. Now, it has been miniaturized even under the condition of an electron microscope. Therefore, it is not easy to measure the formation accuracy of the formation pattern,
There is no choice but to rely on expensive equipment such as electron microscope observation and electronic measurement equipment. Examples of the measuring device are shown in FIGS.
Shown in. This is an example of measuring the dimensional error in the arrow direction of a fine pattern formed on a substrate as shown in FIG. As shown in FIG. 3, a beam gun 32 that projects a beam of an electron beam or a laser beam is moved at a constant speed on the patterned substrate 30, and a reflection from the substrate 30 is received by a detector 33 to be formed on the substrate 30. The dimensional accuracy of the formed pattern 31 is measured. When the projection beam passes through a portion of the substrate 30 where the pattern 31 is not formed, the reflection of the projection beam does not change, and diffuse reflection occurs only at the edge of the pattern 31, so the input to the detector 33 changes. The input signal of the detector 33 when the beam gun 32 scans on the substrate 30 in the direction of the arrow is as shown in FIG. 4, and the point where the reflection intensity changes abruptly is the pattern 31.
The edge position of the pattern 31. Therefore, the dimension of the pattern 31 can be measured by measuring the distance or time of this change point.

【発明が解決しようとする課題】エッチングによるパタ
ーン形成の寸法精度は,エッチング処理の過不足により
左右されるので,エッチング処理されたパターンの寸法
を測定して,所定値との誤差がでないようエッチング処
理工程を常時管理しなけりばならない。しかしながら,
形成パターンの微細化に伴って,その検査はますます困
難となり,上記したごとく高価な測定設備に頼らざるを
得ず,手軽に測定,検査ができるものでなかった。本発
明は,微細加工された形成パターンのエッチング処理の
過不足による寸法誤差の検出を光学顕微鏡の領域で行う
ことのできるエッチング検査板を提供することを目的と
する。
Since the dimensional accuracy of pattern formation by etching depends on the excess or deficiency of the etching process, the dimension of the etched pattern is measured and the etching is performed so that there is no error from a predetermined value. The treatment process must be controlled at all times. However,
As the formation pattern becomes finer, the inspection becomes more and more difficult, and as described above, it is necessary to rely on expensive measuring equipment, and it is not possible to easily measure and inspect. An object of the present invention is to provide an etching inspection plate capable of detecting a dimensional error due to excess or deficiency of etching processing of a finely processed formation pattern in the area of an optical microscope.

【0003】[0003]

【課題を解決するための手段】上記目的を達成するため
の本発明は,エッチング処理される基板の表面に薄膜状
のマスキング部が形成されたエッチング検査板であっ
て,マスキング部の幅が所定の微小量づつ変化する複数
の検査用マスキング部と,マスキング部相互間に形成さ
れる非マスキング部の幅が所定の微小量づつ変化する複
数の検査用非マスキング部とが形成されてなることを特
徴とするエッチング検査板として構成されている。
The present invention for achieving the above object is an etching inspection plate in which a thin film-shaped masking portion is formed on the surface of a substrate to be etched, and the masking portion has a predetermined width. And a plurality of inspection non-masking portions in which the width of the non-masking portion formed between the masking portions changes by a predetermined minute amount. It is configured as a characteristic etching inspection plate.

【0004】[0004]

【作用】上記のような検査パターンが形成されエッチン
グ検査板を,エッチング処理工程に投入して,エッチン
グ処理後の検査用マスキング部と検査用非マスキング部
を観測する。このとき,マスキング部の微小量づつ変化
する幅が測定値より小さくなっているときには,エッチ
ング過多であり,非マスキング部の微小量づつ変化する
幅が所定値より大きくなっているときには,エッチング
不足と判定できる。エッチングの過不足度合は,マスキ
ング部または非マスキング部の幅がゼロとなる位置の所
定値から知ることができる。このマスキング部または非
マスキング部の幅がゼロとなる位置の検出は,光学顕微
鏡で容易に観測することができる。
The etching inspection plate on which the inspection pattern as described above is formed is put into the etching process, and the inspection masking portion and the inspection non-masking portion after the etching treatment are observed. At this time, when the width of the masking portion that changes by a small amount is smaller than the measured value, the etching is excessive, and when the width of the non-masking portion that changes by a small amount is larger than a predetermined value, the etching is insufficient. You can judge. The degree of excess or deficiency of etching can be known from a predetermined value at the position where the width of the masking portion or the non-masking portion becomes zero. The detection of the position where the width of the masking portion or the non-masking portion becomes zero can be easily observed with an optical microscope.

【0005】[0005]

【実施例】次に,具体的な実施例を示し,本発明の理解
に供する。図1はエッチング加工を行う製品基板と同一
条件下のエッチング処理工程でエッチングされるエッチ
ング検査板に形成される検査パターンの例である。基板
1は,その表面に設けられた薄膜に所定のパターンをマ
スキングしてエッチングすることにより図示するような
パターンが形成されたもので,斜線で示された部分がエ
ッチング加工後に残ったマスキング部分で,その他の白
地部分はエッチングにより薄膜が除去された非マスキン
グ部5である。マスキング部2で構成されるC1〜C5
および非マスキング部5で構成されるB1〜B5は同一
半径の円形で,C1はマスキング部2の直線部3と円形
の外縁で点接触し,C2からC5に至る円形は直線部3
との近接距離が所定の間隔で1a─4aで順次大きくな
っている。また,B1は基板1の端縁4と円形の外縁で
点接触し,B2からB5に至る円形は端縁4との近接距
離が所定の間隔1a─4aで順次大きくなっている。上
記1a─4aで示される微小間隔を,基準寸法値とし
て,この間隔1a─4aを実際にエッチングされたパタ
ーンについて測定すると,エッチングの寸法誤差を知る
ことができる。この測定は間隔1a─4aの部分を光学
顕微鏡で観測することにより実行できる。エッチングを
しすぎたときには,微細加工が小さくなる方向になるの
で,エッチング処理後にB1〜B5と端縁4の接点を観
測する。そのとき,例えばB3と端縁4とが接していた
とすると,基準値(検査パターン)よりも間隔2aの距
離だけエッチングされたパターンの幅は短くなったこと
がわかる。間隔2a分だけエッチングが進むことに要す
るエッチング時間は経験的にわかっているので,次回か
らはその分短くエッチングすれば適量のエッチングが可
能となる
EXAMPLES Next, concrete examples will be shown to provide an understanding of the present invention. FIG. 1 shows an example of an inspection pattern formed on an etching inspection plate that is etched in the etching process under the same conditions as the product substrate to be etched. The substrate 1 has a pattern as shown in the figure formed by masking and etching a predetermined pattern on a thin film provided on the surface thereof, and the hatched portion is the masking portion remaining after the etching process. The other white background is the non-masking portion 5 whose thin film is removed by etching. C1 to C5 composed of the masking unit 2
B1 to B5 composed of the non-masking portion 5 are circular with the same radius, C1 is in point contact with the linear portion 3 of the masking portion 2 at the circular outer edge, and the circle from C2 to C5 is the linear portion 3
The close distances to and are increasing sequentially at a predetermined interval of 1a-4a. Further, B1 is in point contact with the edge 4 of the substrate 1 at the outer edge of the circle, and the circle from B2 to B5 has the distance between the edge 4 and the edge 4 gradually increases at predetermined intervals 1a-4a. When the minute intervals indicated by 1a-4a described above are used as reference dimension values, and the intervals 1a-4a are measured for actually etched patterns, the dimension error of etching can be known. This measurement can be performed by observing the portion of the intervals 1a-4a with an optical microscope. When the etching is performed too much, the fine processing tends to be small, so that the contacts between B1 to B5 and the edge 4 are observed after the etching processing. At that time, for example, if B3 and the edge 4 are in contact with each other, it can be seen that the width of the etched pattern is shorter than the reference value (inspection pattern) by the distance 2a. Since the etching time required for the etching to proceed by the interval 2a is empirically known, an appropriate amount of etching will be possible from the next time if the etching is shortened by that amount.

【0006】また,エッチング不足のときには,微細加
工が大きくなる方向になるので,C1〜C5と直線部3
との接点を観測する。そのとき,例えばC4と直線部3
とが接していたとすると,基準値よりも間隔3aの距離
だけエッチングされるパターンの幅は太くなったことが
わかる。この太くなった分だけエッチング時間を延長す
れば適正なエッチングが可能となる。エッチングが正常
に行われたときは,形成された検査パターンは,C1と
直線部3が点接触し,B1と端縁4が点接触する基準値
通りのパターンどなるので,このような検査パターンが
得られるようエッチング工程を管理すれば,同一条件で
エッチング加工される製品基板は正常なエッチングが行
われることになる。図1において,C1〜C5およびB
1〜B5は円形パターンとしたが,直線部3または端縁
4と点接触できる形状であれば必ずしも円形でなくとも
よい。
Further, when etching is insufficient, fine processing tends to increase, so that C1 to C5 and the straight line portion 3
Observe the contact point with. At that time, for example, C4 and straight part 3
It can be seen that the width of the pattern etched by a distance of 3a is wider than the reference value if the two are in contact with each other. Proper etching is possible if the etching time is extended by the amount corresponding to the increase in thickness. When the etching is normally performed, the formed inspection pattern is a pattern according to the reference value in which C1 and the linear portion 3 are in point contact with each other and B1 and the edge 4 are in point contact with each other. If the etching process is controlled so that it can be obtained, normal etching will be performed on the product substrate that is etched under the same conditions. In FIG. 1, C1 to C5 and B
Although 1 to B5 are circular patterns, they may not necessarily be circular as long as they have a shape capable of making point contact with the straight line portion 3 or the edge 4.

【0007】[0007]

【発明の効果】以上の説明のように本発明によりば,製
品基板のエッチング処理工程と同一条件下でエッチング
検査板をエッチングし,そのエッチング状態を観測すれ
ば,エッチングの過不足が定量的に検出できる。形成パ
ターンの変化は光学顕微鏡により容易に測定することが
できるので,検査パターンの基準値通りにエッチング加
工を行うよう工程管理することにより,正常なエッチン
グ加工が実施できる。
As described above, according to the present invention, if the etching inspection plate is etched under the same conditions as the etching process of the product substrate and the etching state is observed, the excess or deficiency of the etching can be quantitatively determined. Can be detected. Since the change in the formed pattern can be easily measured by an optical microscope, normal etching can be performed by controlling the process so that the etching is performed according to the reference value of the inspection pattern.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明に保る実施例の検査パターン図。FIG. 1 is an inspection pattern diagram of an embodiment according to the present invention.

【図2】 従来例測定方法を示す形成パターン図。FIG. 2 is a formation pattern diagram showing a conventional measuring method.

【図3】 従来例測定装置の模式図。FIG. 3 is a schematic diagram of a conventional measuring device.

【図4】 従来例測定装置による検出器への入力信号グ
ラフ。
FIG. 4 is a graph of an input signal to a detector by a conventional measuring device.

【符号の説明】[Explanation of symbols]

1…基板 2…薄膜 3…残存形成される直線部 4…基板端縁の
直線部 B1〜B5…除去図形 C1〜C5…残
存図形 1a〜4a…所定間隔
DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Thin film 3 ... Remaining formed straight line part 4 ... Substrate edge straight line part B1-B5 ... Removal figure C1-C5 ... Remaining figure 1a-4a ... Predetermined space | interval

Claims (1)

【特許請求の範囲】 【請求項1】 エッチング処理される基板の表面に薄膜
状のマスキング部が形成されたエッチング検査板であっ
て,マスキング部の幅が所定の微小量づつ変化する複数
の検査用マスキング部と,マスキング部相互間に形成さ
れる非マスキング部の幅が所定の微小量づつ変化する複
数の検査用非マスキング部とが形成されてなることを特
徴とするエッチング検査板。
Claim: What is claimed is: 1. An etching inspection plate in which a thin film-shaped masking portion is formed on the surface of a substrate to be etched, wherein the width of the masking portion changes by a predetermined minute amount. An etching inspection plate comprising: a masking portion for inspection; and a plurality of non-masking portions for inspection in which the width of the non-masking portion formed between the masking portions changes by a predetermined minute amount.
JP16267991A 1991-07-03 1991-07-03 Etching inspection plate Pending JPH0513922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16267991A JPH0513922A (en) 1991-07-03 1991-07-03 Etching inspection plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16267991A JPH0513922A (en) 1991-07-03 1991-07-03 Etching inspection plate

Publications (1)

Publication Number Publication Date
JPH0513922A true JPH0513922A (en) 1993-01-22

Family

ID=15759238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16267991A Pending JPH0513922A (en) 1991-07-03 1991-07-03 Etching inspection plate

Country Status (1)

Country Link
JP (1) JPH0513922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109725A (en) * 2005-10-11 2007-04-26 Nitto Denko Corp Wiring circuit board assembly sheet and its production process
JP2012134197A (en) * 2010-12-20 2012-07-12 Nitto Denko Corp Method of manufacturing wiring circuit board, method of manufacturing wiring circuit board assembly sheet, wiring circuit board, and wiring circuit board assembly sheet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109725A (en) * 2005-10-11 2007-04-26 Nitto Denko Corp Wiring circuit board assembly sheet and its production process
JP4640815B2 (en) * 2005-10-11 2011-03-02 日東電工株式会社 Wiring circuit board assembly sheet and manufacturing method thereof
JP2012134197A (en) * 2010-12-20 2012-07-12 Nitto Denko Corp Method of manufacturing wiring circuit board, method of manufacturing wiring circuit board assembly sheet, wiring circuit board, and wiring circuit board assembly sheet
US8866020B2 (en) 2010-12-20 2014-10-21 Nitto Denko Corporation Method for manufacturing printed circuit board, method for manufacturing printed circuit board assembly sheet, printed circuit board, and printed circuit board assembly sheet

Similar Documents

Publication Publication Date Title
US4462860A (en) End point detection
US4454001A (en) Interferometric method and apparatus for measuring etch rate and fabricating devices
US20050100205A1 (en) Method for measuring three dimensional shape of a fine pattern
US5023188A (en) Method of determining the depth of trenches formed in a semiconductor wafer
KR101377774B1 (en) Optical foreign material detection device and processing liquid coating apparatus equipped with this
PL123001B1 (en) Method of optical checking of transverse dimensions of elements of semiconductor chips
US20080165367A1 (en) Roughness evaluation method and system
US5684301A (en) Monocrystalline test structures, and use for calibrating instruments
JPH0513922A (en) Etching inspection plate
JPS61124809A (en) Inspection and inspecting apparatus
JP2003057009A (en) Detection method for sample to be inspected and measuring instrument
JP3201473B2 (en) Optimal focus position measuring method and focus position measuring mask
JP3127554B2 (en) Etching apparatus and etching method
US7010196B2 (en) Method of forming laser induced grating pattern
KR100280513B1 (en) Phase difference mask for semiconductor manufacturing
JP2002310625A (en) Three-dimensional measuring method and instrument thereof
JPS63225110A (en) Inspection instrument
KR100269944B1 (en) Method for testing analysis ability of inspection equipment
JPH07111953B2 (en) Photolithography pattern dimension management method
JPS60103633A (en) Automatic wafer prober device
JPS6176690A (en) Method and apparatus for detecting final point of etching process
JPH0376117A (en) Terminal detection
JP2000021767A (en) Method and apparatus for observing position
KR0127661B1 (en) Automatic exposure method using the reticle for semiconductor fabrication
KR20060103972A (en) Method for inspecting a profile of minute structures