JPH0513845A - Semiconductor laser excitation laser equipment - Google Patents

Semiconductor laser excitation laser equipment

Info

Publication number
JPH0513845A
JPH0513845A JP16666991A JP16666991A JPH0513845A JP H0513845 A JPH0513845 A JP H0513845A JP 16666991 A JP16666991 A JP 16666991A JP 16666991 A JP16666991 A JP 16666991A JP H0513845 A JPH0513845 A JP H0513845A
Authority
JP
Japan
Prior art keywords
laser
semiconductor laser
solid
laser medium
excitation light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16666991A
Other languages
Japanese (ja)
Inventor
Hirotaka Koyama
博隆 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16666991A priority Critical patent/JPH0513845A/en
Publication of JPH0513845A publication Critical patent/JPH0513845A/en
Pending legal-status Critical Current

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  • Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser excitation laser equipment of high efficiency at a low cost wherein miniaturization and simplification of adjustment can be realized, by a method wherein conversion efficiency is increased and the number of parts is decreased by unnecessitating a condeser optical system and reducing excitation light loss due to reflection. CONSTITUTION:In a semiconductor laser pumping laser equipment, at least the following are arranged on a straight line; a semiconductor laser 1 serving as an excitation light source, a rod type solid laser medium 3 exhibiting optical amplification effect, and a pair of reflecting mirrors constituting a resonator. At least one end surface 9 of the solid laser medium is constituted of a plurality of different kinds of surfaces.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体レーザ励起レー
ザー装置に係わり、特にその固体レーザー媒質の端面の
改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser pumped laser device, and more particularly to improvement of the end face of a solid laser medium.

【0002】[0002]

【従来の技術】一般に、半導体レーザを励起光源として
用いた半導体レーザ励起レーザー装置は、側面励起方式
と端面励起方式とに大別出来る。そして、端面励起方式
の半導体レーザ励起レーザー装置においては、半導体レ
ーザ例えばレーザダイオードからの出力光を固体レーザ
ー媒質に集光するために、レンズからなる集光光学系が
用いられる。これはレーザダイオードからの出力光が大
きな拡がり角を持っており、効率的に固体レーザー媒質
に励起光を照射することが出来ないからである。即ち、
従来の半導体レーザ励起レーザー装置は図3に示すよう
に構成され、レーザダイオード1と、このレーザダイオ
ード1の出力光を後述の棒状固体レーザー媒質内に集光
する集光光学系2と、光増幅効果をもたらす棒状固体レ
ーザー媒質3と、共振器を構成する一対の反射鏡の一方
である出力鏡4とが、一直線上に配置されている。
2. Description of the Related Art Generally, a semiconductor laser pumping laser device using a semiconductor laser as a pumping light source can be roughly classified into a side pumping system and an end face pumping system. In the end face pumping type semiconductor laser pumped laser device, a focusing optical system including a lens is used to focus the output light from the semiconductor laser, for example, a laser diode, on a solid laser medium. This is because the output light from the laser diode has a large divergence angle, and the solid-state laser medium cannot be efficiently irradiated with the excitation light. That is,
A conventional semiconductor laser excitation laser device is configured as shown in FIG. 3, and includes a laser diode 1, a condensing optical system 2 for condensing the output light of the laser diode 1 in a rod-shaped solid laser medium described later, and an optical amplifier. The rod-shaped solid-state laser medium 3 that produces the effect and the output mirror 4 that is one of the pair of reflecting mirrors that form the resonator are arranged in a straight line.

【0003】尚、一対の反射鏡の他方は固体レーザー媒
質3の入射側端面5が兼ねており、図中の符号6は固体
レーザー媒質3の出射側端面、7は励起光光路、8は出
力光光路である。そして、固体レーザー媒質3の入射側
端面5と出射側端面6は、一種類の平坦な面からなって
いる。
The incident side end surface 5 of the solid laser medium 3 also serves as the other of the pair of reflecting mirrors. In the figure, reference numeral 6 is the exit side end surface of the solid laser medium 3, 7 is an excitation light optical path, and 8 is an output. The light path. The incident side end surface 5 and the emitting side end surface 6 of the solid-state laser medium 3 are made of one kind of flat surface.

【0004】[0004]

【発明が解決しようとする課題】ところが、上記のよう
な従来の半導体レーザ励起レーザー装置においては、集
光光学系2を通過する際に励起光が反射等による損失を
受けることは、無反射処理を施した光学部品を使用して
も少なからず避けられなかった。又、この集光光学系2
の調整は煩雑であり、部品数の増加の要因となってい
た。
However, in the conventional semiconductor laser excitation laser device as described above, the fact that the excitation light receives a loss due to reflection or the like when passing through the condensing optical system 2 is a non-reflection treatment. Even with the optical components that have been subjected to, it was inevitable to some extent. Also, this condensing optical system 2
Adjustment of was complicated and was a factor of increasing the number of parts.

【0005】そこで、集光光学系2を用いないで、レー
ザダイオード1を固体レーザー媒質3に近接して装着
し、光学系を用いずに固体レーザー媒質3内に励起光を
照射する方式も用いられている。しかし、この方式では
光学系を用いないことから損失は減少するが、励起光光
路7が制御不能であるため、集光効率が減少し易く、集
光光学系2を用いた方式と別の面で使用し難いという欠
点があった。
Therefore, a method in which the laser diode 1 is mounted close to the solid-state laser medium 3 without using the condensing optical system 2 and the excitation light is irradiated into the solid-state laser medium 3 without using the optical system is also used. Has been. However, in this method, although the optical system is not used, the loss is reduced, but since the excitation light optical path 7 is uncontrollable, the light collection efficiency is likely to be decreased, which is different from the method using the light collection optical system 2. It had the drawback of being difficult to use.

【0006】この発明は、集光光学系を用いる必要がな
く、反射による損失が少なく、部品点数を減らすことが
出来、発振器を小形化することが可能な半導体レーザ励
起レーザー装置を提供することを目的とする。
The present invention provides a semiconductor laser pumped laser device capable of reducing the loss due to reflection, reducing the number of parts, and downsizing the oscillator without the need of using a focusing optical system. To aim.

【0007】[0007]

【課題を解決するための手段】この発明は、少なくと
も、励起光源となる半導体レーザと、光増幅効果をもた
らす棒状固体レーザー媒質と、共振器を構成する一対の
反射鏡とが一直線上に配置され、且つ固体レーザー媒質
の少なくとも一方の端面が、種類の異なる複数の面から
なる半導体レーザ励起レーザー装置である。
According to the present invention, at least a semiconductor laser serving as an excitation light source, a rod-shaped solid-state laser medium that produces an optical amplification effect, and a pair of reflecting mirrors that form a resonator are arranged in a straight line. Also, at least one end face of the solid-state laser medium is a semiconductor laser pumped laser device including a plurality of different types of faces.

【0008】[0008]

【作用】この発明によれば、集光光学系を用いる必要が
なく、反射による励起光の損失を減少することが出来る
ため、変換効率の向上を図ることが出来る。又、部品点
数を減らすことも可能であるため、小形化、調整の簡素
化が実現され、安価で高効率の半導体レーザ励起レーザ
ー装置が得られる。
According to the present invention, since it is not necessary to use a condensing optical system and the loss of the excitation light due to reflection can be reduced, the conversion efficiency can be improved. Further, since the number of parts can be reduced, downsizing and simplification of adjustment can be realized, and an inexpensive and highly efficient semiconductor laser pumped laser device can be obtained.

【0009】[0009]

【実施例】以下、図面を参照して、この発明の一実施例
を詳細に説明する。この発明による半導体レーザ励起レ
ーザー装置は、図1に示すように構成され、従来例(図
3)と同一箇所は同一符号を付すことにする。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. The semiconductor laser pumped laser device according to the present invention is configured as shown in FIG. 1, and the same parts as those in the conventional example (FIG. 3) are designated by the same reference numerals.

【0010】即ち、一直線上に所定間隔をおいて、励起
光源となる半導体レーザ例えばレーザダイオード1と、
光増幅効果をもたらす棒状固体レーザー媒質3と、共振
器を構成する一対の反射鏡の一方である出力鏡4とが、
配置されている。
That is, a semiconductor laser, for example, a laser diode 1 serving as an excitation light source is arranged on a straight line at a predetermined interval,
The rod-shaped solid-state laser medium 3 that provides the optical amplification effect and the output mirror 4 that is one of the pair of reflecting mirrors that form the resonator are
It is arranged.

【0011】この場合、固体レーザー媒質3の入射側端
面9と出射側端面10は、いずれも図2(a)、(b)
からも明らかなように、種類の異なる複数の面例えば2
つの面からなっている。即ち、中心部の平坦面9a、1
0aと周縁部の曲面9b、10bからなっており、曲面
9b、10bは球面の一部である。尚、一対の反射鏡の
他方は、固体レーザー媒質3の入射側端面9が兼ねてい
る。さて次に、入射側端面9と出射側端面10を、種類
の異なる複数の面で構成した理由について、述べること
にする。
In this case, the incident side end face 9 and the emitting side end face 10 of the solid-state laser medium 3 are both shown in FIGS. 2 (a) and 2 (b).
As is clear from the above, a plurality of surfaces of different types, for example, 2
It consists of two sides. That is, the central flat surfaces 9a, 1
0a and curved surfaces 9b and 10b of the peripheral portion, and the curved surfaces 9b and 10b are a part of spherical surfaces. The incident side end surface 9 of the solid-state laser medium 3 also serves as the other of the pair of reflecting mirrors. Next, the reason why the incident-side end surface 9 and the outgoing-side end surface 10 are composed of a plurality of different kinds of surfaces will be described.

【0012】説明を簡単にするために、固体レーザー媒
質3の励起光入射側は励起光の波長に対して無反射処
理、固体レーザー媒質3によって増幅され発振する波長
の光(出力光)に対して全反射処理がなされており、
又、もう一方の端面(出射側)は励起光の波長に対して
全反射処理、出力光の波長に対して無反射処理がなされ
ているもとのする。
For simplification of explanation, the pumping light incident side of the solid-state laser medium 3 is subjected to anti-reflection treatment for the wavelength of the pumping light, and for the light (output light) of the wavelength amplified and oscillated by the solid-state laser medium 3. Total reflection processing is done,
Further, it is assumed that the other end face (outgoing side) is subjected to total reflection processing for the wavelength of the excitation light and non-reflection processing for the wavelength of the output light.

【0013】今、励起光入射側のレーザダイオード1の
出力光の広がり角を考慮して、それが発散せず固体レー
ザー媒質3の内部に集光されるような曲率を持った球面
に研磨されているとする。又、出射側は、励起光が発散
せずに再び固体レーザー媒質3に集光されるように、反
射する球面であるとする。ここで、入射側の球面の曲率
と出射側の球面の曲率を適当に選ぶと、効率的に励起を
行なう両端面の曲率を容易に見つけることが出来る。
Now, considering the divergence angle of the output light of the laser diode 1 on the pumping light incident side, it is polished into a spherical surface having a curvature such that it is not diverged and is condensed inside the solid-state laser medium 3. Suppose In addition, the emitting side is assumed to be a spherical surface that reflects the excitation light so that it is condensed again on the solid-state laser medium 3 without diverging. Here, if the curvatures of the spherical surface on the incident side and the spherical surface on the outgoing side are appropriately selected, it is possible to easily find the curvatures of both end surfaces for efficient excitation.

【0014】しかし、一般に用いられている半導体レー
ザ励起レーザー装置の場合、入射側端面を出力光の反射
鏡としているので、端面をレンズとして機能させるため
に曲率を持たせると、発振条件を満たすような共振器条
件とすることが困難であった。
However, in the case of a commonly used semiconductor laser pumped laser device, since the incident side end face is a reflecting mirror for output light, if the end face has a curvature to function as a lens, the oscillation condition is satisfied. It was difficult to make the resonator conditions different.

【0015】そこで、この発明では、上記のように固体
レーザー媒質3の入射側端面9と出射側端面10を種類
の異なる複数の面で形成した訳であり、各端面9、10
の中心部のみを平坦面9a、10aもしくは比較的曲率
の小さな曲面とし、その周縁部のみを曲面9b、10b
として、励起光を効率的に集光し且つ発振条件を満たす
ことが可能となる。この結果、従来のような集光光学系
を用いる必要がなく、反射による損失が少なく、部品点
数を減らすことが出来、発振器を小形化することが可能
となる。
Therefore, in the present invention, as described above, the incident side end face 9 and the emitting side end face 10 of the solid-state laser medium 3 are formed by a plurality of different kinds of faces.
Only the central portions of the flat surfaces 9a, 10a or curved surfaces having a relatively small curvature, and only the peripheral portions thereof are curved surfaces 9b, 10b.
As a result, it becomes possible to efficiently collect the excitation light and satisfy the oscillation condition. As a result, it is not necessary to use a condensing optical system as in the prior art, the loss due to reflection is small, the number of parts can be reduced, and the oscillator can be miniaturized.

【0016】尚、上記実施例では、入射側および出射側
の両端面9、10共に2つの曲面に研磨形成されていた
が、どちらか一方のみでも良い。又、曲面を球面とした
が任意の面でも構わない。更に、反射鏡の一方を固体レ
ーザー媒質3の入射側端面9としたが、固体レーザー媒
質3とは別に反射鏡を用いても良い。但し、この場合
は、固体レーザー媒質3の入射側端面9は出力光に対し
無反射条件処理を施す。又、図中に示した励起光の光路
は1つの例であって、任意の光路で良い。
In the above embodiment, both the end faces 9 and 10 on the incident side and the emission side are both polished to have two curved surfaces, but either one may be polished. Further, although the curved surface is a spherical surface, any surface may be used. Further, one of the reflecting mirrors is the incident side end face 9 of the solid-state laser medium 3, but a reflecting mirror may be used separately from the solid-state laser medium 3. However, in this case, the incident-side end face 9 of the solid-state laser medium 3 is subjected to the non-reflection condition processing for the output light. Further, the optical path of the excitation light shown in the figure is one example, and any optical path may be used.

【0017】[0017]

【発明の効果】以上説明したように、この発明によれ
ば、集光光学系を用いる必要がなく、反射による励起光
の損失を減少することが出来るため、変換効率の向上を
図ることが出来る。又、部品点数を減らすことも可能で
あるため、小形化、調整の簡素化が実現され、安価で高
効率の半導体レーザ励起レーザー装置を提供することが
出来る。
As described above, according to the present invention, it is not necessary to use a condensing optical system and the loss of excitation light due to reflection can be reduced, so that the conversion efficiency can be improved. .. Further, since the number of parts can be reduced, the miniaturization and the simplification of adjustment can be realized, and an inexpensive and highly efficient semiconductor laser excitation laser device can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例に係る半導体レーザ励起レ
ーザー装置を示す構成図。
FIG. 1 is a configuration diagram showing a semiconductor laser pumped laser device according to an embodiment of the present invention.

【図2】(a)、(b)はこの発明の半導体レーザ励起
レーザー装置の要部(固体レーザー媒質)を示す側面図
と正面図。
2A and 2B are a side view and a front view showing a main part (solid-state laser medium) of the semiconductor laser pumped laser device of the present invention.

【図3】従来の半導体レーザ励起レーザー装置を示す構
成図。
FIG. 3 is a configuration diagram showing a conventional semiconductor laser pumped laser device.

【符号の説明】[Explanation of symbols]

1…レーザダイオード(半導体レーザ)、3…固体レー
ザー媒質、4…出力鏡、9…入射側端面、10…出射側
端面、9a、10a…平坦面、9b、10b…曲面。
DESCRIPTION OF SYMBOLS 1 ... Laser diode (semiconductor laser), 3 ... Solid-state laser medium, 4 ... Output mirror, 9 ... Incident side end surface, 10 ... Emission side end surface, 9a, 10a ... Flat surface, 9b, 10b ... Curved surface.

Claims (1)

【特許請求の範囲】 【請求項1】 少なくとも、励起光源となる半導体レー
ザと、光増幅効果をもたらす棒状固体レーザー媒質と、
共振器を構成する一対の反射鏡とが一直線上に配置され
てなる半導体レーザ励起レーザー装置において、 上記固体レーザー媒質の少なくとも一方の端面は、種類
の異なる複数の面からなることを特徴とする半導体レー
ザ励起レーザー装置。
Claim: What is claimed is: 1. A semiconductor laser which serves as an excitation light source, and a rod-shaped solid-state laser medium which produces an optical amplification effect.
In a semiconductor laser pumped laser device in which a pair of reflecting mirrors constituting a resonator are arranged in a straight line, at least one end surface of the solid-state laser medium is composed of a plurality of different types of semiconductors. Laser pumped laser equipment.
JP16666991A 1991-07-08 1991-07-08 Semiconductor laser excitation laser equipment Pending JPH0513845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16666991A JPH0513845A (en) 1991-07-08 1991-07-08 Semiconductor laser excitation laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16666991A JPH0513845A (en) 1991-07-08 1991-07-08 Semiconductor laser excitation laser equipment

Publications (1)

Publication Number Publication Date
JPH0513845A true JPH0513845A (en) 1993-01-22

Family

ID=15835534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16666991A Pending JPH0513845A (en) 1991-07-08 1991-07-08 Semiconductor laser excitation laser equipment

Country Status (1)

Country Link
JP (1) JPH0513845A (en)

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