JPH05138002A - Process gas supply device - Google Patents
Process gas supply deviceInfo
- Publication number
- JPH05138002A JPH05138002A JP30792691A JP30792691A JPH05138002A JP H05138002 A JPH05138002 A JP H05138002A JP 30792691 A JP30792691 A JP 30792691A JP 30792691 A JP30792691 A JP 30792691A JP H05138002 A JPH05138002 A JP H05138002A
- Authority
- JP
- Japan
- Prior art keywords
- process gas
- check valve
- recovery pipe
- valve
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体ウェーハの製造
・処理装置へプロセスガスを供給する装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for supplying a process gas to a semiconductor wafer manufacturing / processing apparatus.
【0002】[0002]
【従来の技術】従来、半導体ウェーハの製造・処理装置
へたとえばH2,O2, N2, Ar, Heなどのプロセスガスを供
給する場合は、図2のように構成されているのが通常で
ある。すなわち、原料ガスタンク1に貯蔵された液化ガ
スを蒸発器2で蒸発させてガス体にしたのち減圧弁3で
たとえば7kgf/cm2 に減圧し、精製装置4で精製してプ
ロセスガスとして供給管5を介して半導体ウェーハを製
造・処理する複数の製造・処理装置6へ同時に供給する
のである。2. Description of the Related Art Conventionally, when supplying process gases such as H 2 , O 2 , N 2 , Ar, and He to a semiconductor wafer manufacturing / processing apparatus, it is usually configured as shown in FIG. Is. That is, the liquefied gas stored in the raw material gas tank 1 is evaporated into a gas body by the evaporator 2 and then decompressed by the decompression valve 3 to, for example, 7 kgf / cm 2 , purified by the refining device 4 and supplied as the process gas by the supply pipe 5 It is simultaneously supplied to a plurality of manufacturing / processing apparatuses 6 for manufacturing / processing semiconductor wafers via.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た従来のプロセスガスの供給方法では、一部の製造・処
理装置6を停止するときにプロセスガスの供給をストッ
プすると、供給管5の末端はデッドゾーンとなってガス
溜まりが生じてプロセスガスが汚染される可能性があ
り、品質が劣化するという問題がある。However, in the above-mentioned conventional process gas supply method, if the process gas supply is stopped when part of the manufacturing / processing apparatus 6 is stopped, the end of the supply pipe 5 is dead. There is a possibility that the gas will accumulate in the zone and the process gas may be contaminated, and the quality will deteriorate.
【0004】このような欠点を改善する方法として、た
とえば図3に示すように、製造・処理装置6の入側部に
ガスパージ管7を配設し、供給管5の末端とをガスパー
ジ弁8で接続することにより、どの供給管5にも絶えず
プロセスガスを流す連続パージ方法(たとえば、日経マ
イクロデバイス別冊No.2, 日経BP社,1988年10月発
行, P.196 〜201 :大見ら著「分岐・合流配管システ
ム:滞留部を完全に除去,ppt の不純物レベル達成を可
能に」を参照) が提案されている。しかし、このような
連続パージ方法においても、プロセスガスを大気に放出
することになるから資源的に大きなロスであり、かつ大
気汚染の一因にもなるという問題が潜在している。As a method of improving such a defect, for example, as shown in FIG. 3, a gas purge pipe 7 is provided at the inlet side of the manufacturing / processing apparatus 6, and a gas purge valve 8 is provided at the end of the supply pipe 5. A continuous purging method in which a process gas is continuously supplied to any supply pipe 5 by connecting (for example, Nikkei Microdevices Separate Volume No.2, Nikkei BP, October 1988 issue, P.196-201: Ohmi et al. See “Branching and merging piping system: Completely remove stagnant parts and achieve ppt impurity level”) is proposed. However, even in such a continuous purging method, since the process gas is released to the atmosphere, there is a problem that it is a great loss in resources and also a cause of air pollution.
【0005】本発明は、上記のような従来技術の有する
課題を解決したプロセスガス供給装置を提供することを
目的とする。An object of the present invention is to provide a process gas supply device which solves the problems of the prior art as described above.
【0006】[0006]
【課題を解決するための手段】本発明は、原料ガスタン
クからの原料ガスを蒸発器で蒸発させて減圧弁で減圧し
精製装置で精製したのち、供給管を介して半導体ウェー
ハの製造・処理装置へプロセスガスとして供給する装置
であって、前記減圧弁の出側に逆止弁を設けるととも
に、前記製造・処理装置の入側部に回収管を配設し、こ
の回収管と前記供給管とを各製造・処理装置の入側部に
おいて回収弁を用いて結合し、前記回収管と前記逆止弁
の出側との間に圧縮機とレシーバタンクと冷却器と逆止
弁とを順次接続してなることを特徴とするプロセスガス
供給装置である。According to the present invention, a raw material gas from a raw material gas tank is evaporated by an evaporator, decompressed by a pressure reducing valve, purified by a refining device, and then refined by a refining device. Is a device for supplying as process gas to the pressure reducing valve, a check valve is provided on the outlet side of the pressure reducing valve, and a recovery pipe is disposed on the inlet side of the manufacturing / processing device. Is connected by using a recovery valve at the inlet side of each manufacturing / processing device, and a compressor, a receiver tank, a cooler, and a check valve are sequentially connected between the recovery pipe and the outlet side of the check valve. The process gas supply device is characterized by the following.
【0007】[0007]
【作 用】本発明によれば、半導体ウェーハの製造・処
理装置側に配設した回収管を介して停止中の製造・処理
装置の供給管に流したプロセスガスを回収し、圧縮機と
レシーバタンク,冷却器,逆止弁を介して所定の圧力で
プロセスガスを精製装置の入側に供給するようにしたの
で、プロセスガスを高純度な状態で再循環させることが
でき、これによって放散によるロスを防止することが可
能である。[Operation] According to the present invention, the process gas flowing through the supply pipe of the stopped manufacturing / processing apparatus is recovered through the recovery pipe arranged on the semiconductor wafer manufacturing / processing apparatus side, and the compressor and the receiver are recovered. Since the process gas is supplied to the inlet side of the refining device at a predetermined pressure through the tank, the cooler, and the check valve, the process gas can be recirculated in a high-purity state, which causes the emission of gas. It is possible to prevent loss.
【0008】[0008]
【実施例】以下に、本発明の実施例について、図面を参
照して詳しく説明する。図1は本発明の実施例の構成を
示す概要図であり、従来例と同一部材は同一符号を付し
ている。図において、9は減圧弁3の出側に設けられた
逆止弁である。10は製造・処理装置6の入側部に配設さ
れた回収管、11はプロセスガスの回収弁であり、回収管
10と供給管5とを結合する。12は圧縮機、13はレシーバ
タンク、14は冷却器、15は逆止弁であり、それぞれ回収
管10と精製装置4の入側でかつ逆止弁9の出側との間に
順次接続される。Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration of an embodiment of the present invention, and the same members as those in the conventional example are designated by the same reference numerals. In the figure, 9 is a check valve provided on the outlet side of the pressure reducing valve 3. 10 is a recovery pipe disposed at the inlet side of the manufacturing / processing apparatus 6, 11 is a process gas recovery valve, and a recovery pipe
10 and the supply pipe 5 are connected. Reference numeral 12 is a compressor, 13 is a receiver tank, 14 is a cooler, and 15 is a check valve, which are sequentially connected between the recovery pipe 10 and the inlet side of the refining device 4 and the outlet side of the check valve 9. It
【0009】このようにしてプロセスガスを循環させ得
る配管系を構成することにより、一部の製造・処理装置
6を停止するときには、その供給管6に接続されている
回収弁11を開放して回収管10を介してプロセスガスを回
収し、圧縮機12により所定の圧力に昇圧してからレシー
バタンク13, 冷却器14, 逆止弁15を介して精製装置4に
送り込むことができる。By thus constructing the piping system capable of circulating the process gas, when a part of the manufacturing / processing apparatus 6 is stopped, the recovery valve 11 connected to the supply pipe 6 is opened. The process gas can be recovered via the recovery pipe 10, raised to a predetermined pressure by the compressor 12, and then sent to the refining device 4 via the receiver tank 13, the cooler 14, and the check valve 15.
【0010】本発明のプロセスガス供給装置をN2ガス供
給ラインに適用したところ、従来はユースポイントでの
露点が−110 ℃で放散量が10l/min であったのに対し、
本発明では放散量が当然のことながら0であり、さらに
露点が−120 ℃と高めることができた。When the process gas supply system of the present invention was applied to the N 2 gas supply line, the dew point at the point of use was −110 ° C. and the emission amount was 10 l / min in the past.
In the present invention, the emission amount was naturally 0, and the dew point could be increased to -120 ° C.
【0011】[0011]
【発明の効果】以上説明したように本発明によれば、プ
ロセスガスを回収管を用いて回収しかつ循環使用するよ
うにしたので、ガスの汚染を防止することができるとと
もに、ガス放散がないからコストダウンに寄与する効果
大である。また、プロセスガスを精製装置を介して循環
させるから、ガス中の不純物をさらに減少させることが
でき、したがって製品の品質向上を図ることが可能であ
る。As described above, according to the present invention, since the process gas is recovered by using the recovery pipe and is recycled, it is possible to prevent the gas from being contaminated and to prevent the gas from being emitted. It is a great effect that contributes to cost reduction. Further, since the process gas is circulated through the refining device, impurities in the gas can be further reduced, and therefore the quality of the product can be improved.
【図1】本発明の実施例の構成を示す概要図である。FIG. 1 is a schematic diagram showing a configuration of an exemplary embodiment of the present invention.
【図2】従来のプロセスガス供給装置の構成例を示す概
要図である。FIG. 2 is a schematic diagram showing a configuration example of a conventional process gas supply device.
【図3】従来のプロセスガス供給装置の他の構成例を示
す概要図である。FIG. 3 is a schematic diagram showing another configuration example of a conventional process gas supply device.
1 原料ガスタンク 2 蒸発器 3 減圧弁 4 精製装置 5 供給管 6 製造・処理装置 9 逆止弁 10 回収管 11 回収弁 12 圧縮機 13 レシーバタンク 14 冷却器 15 逆止弁 1 Raw material gas tank 2 Evaporator 3 Pressure reducing valve 4 Refining device 5 Supply pipe 6 Manufacturing / processing device 9 Check valve 10 Recovery pipe 11 Recovery valve 12 Compressor 13 Receiver tank 14 Cooler 15 Check valve
Claims (1)
器で蒸発させて減圧弁で減圧し精製装置で精製したの
ち、供給管を介して半導体ウェーハの製造・処理装置へ
プロセスガスとして供給する装置であって、前記減圧弁
の出側に逆止弁を設けるとともに、前記製造・処理装置
の入側部に回収管を配設し、この回収管と前記供給管と
を各製造・処理装置の入側部において回収弁を用いて結
合し、前記回収管と前記逆止弁の出側との間に圧縮機と
レシーバタンクと冷却器と逆止弁とを順次接続してなる
ことを特徴とするプロセスガス供給装置。1. An apparatus for supplying a raw material gas from a raw material gas tank with a vaporizer, decompressing with a pressure reducing valve, purifying with a refining apparatus, and then supplying it as a process gas to a semiconductor wafer manufacturing / processing apparatus through a supply pipe. Therefore, a check valve is provided on the outlet side of the pressure reducing valve, and a recovery pipe is installed on the inlet side of the manufacturing / processing device.The recovery pipe and the supply pipe are connected to each manufacturing / processing device. It is characterized in that the side portion is connected by using a recovery valve, and a compressor, a receiver tank, a cooler and a check valve are sequentially connected between the recovery pipe and the outlet side of the check valve. Process gas supply device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30792691A JPH05138002A (en) | 1991-11-22 | 1991-11-22 | Process gas supply device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30792691A JPH05138002A (en) | 1991-11-22 | 1991-11-22 | Process gas supply device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05138002A true JPH05138002A (en) | 1993-06-01 |
Family
ID=17974835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30792691A Pending JPH05138002A (en) | 1991-11-22 | 1991-11-22 | Process gas supply device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05138002A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003021248A (en) * | 2001-07-10 | 2003-01-24 | Asahi Organic Chem Ind Co Ltd | Manifold valve |
-
1991
- 1991-11-22 JP JP30792691A patent/JPH05138002A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003021248A (en) * | 2001-07-10 | 2003-01-24 | Asahi Organic Chem Ind Co Ltd | Manifold valve |
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