JPH0513696A - Signal transmission circuit - Google Patents

Signal transmission circuit

Info

Publication number
JPH0513696A
JPH0513696A JP3189313A JP18931391A JPH0513696A JP H0513696 A JPH0513696 A JP H0513696A JP 3189313 A JP3189313 A JP 3189313A JP 18931391 A JP18931391 A JP 18931391A JP H0513696 A JPH0513696 A JP H0513696A
Authority
JP
Japan
Prior art keywords
power supply
integrated circuit
buffer
output
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3189313A
Other languages
Japanese (ja)
Inventor
Katsumi Onuki
克己 大貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3189313A priority Critical patent/JPH0513696A/en
Publication of JPH0513696A publication Critical patent/JPH0513696A/en
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
  • Dc Digital Transmission (AREA)

Abstract

PURPOSE:To prevent damage of an output buffer at the time of failure in power supply to an input buffer, in a signal transmission circuit having a MOS output buffer, a MOS input buffer with an output signal of the output buffer as an input, a clamp circuit for protecting the input buffer and a power supply circuit for supplying power to the input buffer. CONSTITUTION:A power supply comparison circuit 200 for comparing a power supply level to an input buffer 7 with a reference value is provided, wherein when the comparison result shows detection of a drop in the level, an output buffer 3 is set at high impedance.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【技術分野】本発明は信号伝達回路に関し、特に伝送装
置等に使用されるMOS(Metal Oxide Semiconductor
)集積回路の出力バッファの保護を行う回路に関す
る。
TECHNICAL FIELD The present invention relates to a signal transmission circuit, and particularly to a MOS (Metal Oxide Semiconductor) used in a transmission device or the like.
) A circuit for protecting an output buffer of an integrated circuit.

【0002】[0002]

【従来技術】一般に、MOS集積回路の出力バッファに
は、過大な電流が流れた場合のMOS集積回路自体のデ
バイス破壊を避けるため、出力バッファに流れる電流を
抑える仕組み(例えば、電流を制限する電流制限抵抗を
組込む等)が採られている。また、MOS集積回路の入
力バッファには、静電破壊・ラッチアップ等から入力回
路を保護する仕組み(例えば、入力信号へのダイオード
クランプ回路を組込む等)が用いられている。
2. Description of the Related Art Generally, in an output buffer of a MOS integrated circuit, in order to avoid device destruction of the MOS integrated circuit itself when an excessive current flows, a mechanism for suppressing the current flowing in the output buffer (for example, a current limiting current). Incorporating a limiting resistor, etc.) is adopted. The input buffer of the MOS integrated circuit uses a mechanism for protecting the input circuit from electrostatic breakdown, latch-up, etc. (for example, incorporating a diode clamp circuit into the input signal).

【0003】その従来の回路について図2を参照して説
明する。
The conventional circuit will be described with reference to FIG.

【0004】図において、MOS集積回路2とMOS集
積回路6との間の通信は、MOS集積回路2の出力バッ
ファ9とMOS集積回路6の入力バッファ7とを接続す
ることにより行われる。また、MOS集積回路2は電源
1により電源が供給され、MOS集積回路6は電源5に
よって電源が供給されている。
In the figure, communication between the MOS integrated circuit 2 and the MOS integrated circuit 6 is performed by connecting an output buffer 9 of the MOS integrated circuit 2 and an input buffer 7 of the MOS integrated circuit 6. Further, the MOS integrated circuit 2 is powered by the power supply 1, and the MOS integrated circuit 6 is powered by the power supply 5.

【0005】かかる構成において、MOS集積回路2及
びMOS集積回路6の双方に所定の電源が加えられてい
る場合は、MOS集積回路2の出力バッファ9とMOS
集積回路6の入力バッファ7との間で電気的に正常な動
作を行う。ところが、特にMOS集積回路6の電源5の
出力が低下あるいは電源供給断になった場合、MOS集
積回路6の電源とMOS集積回路6の入力バッファ7と
の間は等価的にダイオードで接続される状態になる。こ
れにより、MOS集積回路6の入力バッファ7はロウイ
ンピーダンス状態になるため、MOS集積回路2からM
OS集積回路6の方向に大電流が流れる。この場合、M
OS集積回路2の出力バッファ9が壊れるか、又はMO
S集積回路2の出力バッファ9に電流制限がかかってい
ても最大定格電流が流れ続け、ついには熱のためにMO
S集積回路2の出力バッファ9が破壊に至る危険性があ
る。
In such a structure, when a predetermined power source is applied to both the MOS integrated circuit 2 and the MOS integrated circuit 6, the output buffer 9 and the MOS of the MOS integrated circuit 2 are connected.
Electrically normal operation is performed with the input buffer 7 of the integrated circuit 6. However, especially when the output of the power supply 5 of the MOS integrated circuit 6 is lowered or the power supply is cut off, the power supply of the MOS integrated circuit 6 and the input buffer 7 of the MOS integrated circuit 6 are equivalently connected by a diode. It becomes a state. As a result, the input buffer 7 of the MOS integrated circuit 6 is brought into a low impedance state, so that the MOS integrated circuit 2 receives the M
A large current flows in the direction of the OS integrated circuit 6. In this case, M
The output buffer 9 of the OS integrated circuit 2 is damaged or the MO
Even if the output buffer 9 of the S integrated circuit 2 is current-limited, the maximum rated current continues to flow, and finally MO due to heat.
The output buffer 9 of the S integrated circuit 2 may be destroyed.

【0006】上述のように、従来の回路では、互いに異
なる電源を持つMOS集積回路間の入力バッファと出力
バッファとが直接接続された場合、入力バッファを持つ
MOS集積回路の電源が供給されなくなると、出力バッ
ファを持つMOS集積回路が壊れるという欠点がある。
As described above, in the conventional circuit, when the input buffer and the output buffer between the MOS integrated circuits having different power supplies are directly connected, the power of the MOS integrated circuit having the input buffer is not supplied. The MOS integrated circuit having the output buffer is damaged.

【0007】[0007]

【発明の目的】本発明は上述した従来の欠点を解決する
ためになされたものであり、その目的はMOS出力バッ
ファの破壊を防ぐことのできる信号伝達回路を提供する
ことである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional drawbacks, and an object thereof is to provide a signal transmission circuit capable of preventing the destruction of a MOS output buffer.

【0008】[0008]

【発明の構成】本発明による信号伝達回路は、MOS出
力バッファと、この出力バッファの出力信号を入力とす
るMOS入力バッファと、この入力バッファへ電源供給
する電源回路とを有する信号伝達回路であって、前記入
力バッファへの電源供給レベルを、基準値と比較する比
較回路と、この比較結果により前記電源供給レベルの低
下が検出されたとき前記出力バッファをハイインピーダ
ンス状態にする制御回路とを有することを特徴とする。
A signal transmission circuit according to the present invention is a signal transmission circuit having a MOS output buffer, a MOS input buffer for receiving an output signal of the output buffer, and a power supply circuit for supplying power to the input buffer. A comparison circuit that compares the power supply level to the input buffer with a reference value, and a control circuit that puts the output buffer in a high impedance state when a decrease in the power supply level is detected by the comparison result. It is characterized by

【0009】[0009]

【実施例】次に、本発明について図面を参照して説明す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

【0010】図1は本発明による信号伝達回路の概略構
成図であり、図2と同等部分は同一符号により示されて
いる。
FIG. 1 is a schematic configuration diagram of a signal transmission circuit according to the present invention, and the same portions as those in FIG. 2 are designated by the same reference numerals.

【0011】図において、MOS集積回路2とMOS集
積回路6の間の接続は、MOS集積回路2の出力トライ
ステートバッファ3とMOS集積回路6の入力バッファ
7を用いて信号線100 を介し行われる。
In the figure, the connection between the MOS integrated circuit 2 and the MOS integrated circuit 6 is made through the signal line 100 by using the output tristate buffer 3 of the MOS integrated circuit 2 and the input buffer 7 of the MOS integrated circuit 6. ..

【0012】また、MOS集積回路2側は、MOS集積
回路2の電源1と同一の電源で駆動される電源比較回路
200 を持つ。この電源比較回路200は、MOS集積回路
6側の駆動電源5の出力202 のレベルを、電源1の出力
レベルと比較する。つまり、電源1の出力レベルが基準
値であり、この基準値より出力202 のレベルが低下する
か否かが監視される。
On the side of the MOS integrated circuit 2, a power supply comparison circuit driven by the same power supply as the power supply 1 of the MOS integrated circuit 2.
Has 200. The power supply comparison circuit 200 compares the level of the output 202 of the driving power supply 5 on the MOS integrated circuit 6 side with the output level of the power supply 1. That is, the output level of the power supply 1 is the reference value, and it is monitored whether or not the level of the output 202 is lower than this reference value.

【0013】さらにまた、この電源比較回路200 の出力
は電源断信号線201 を経由し、MOS集積回路2の出力
トライステートバッファ3のイネーブル端子に接続され
ている。つまり、MOS集積回路6側の駆動電源5の出
力202 のレベルが低下したとき、出力トライステートバ
ッファ3はハイインピーダンス状態に制御されるのであ
る。なお、MOS集積回路2は電源1により電源が供給
され、MOS集積回路6は電源5によって電源が供給さ
れているが、正常状態においては両電源レベルは同一で
あり、電源比較回路200 の出力は送出されない。
Furthermore, the output of the power supply comparison circuit 200 is connected to the enable terminal of the output tristate buffer 3 of the MOS integrated circuit 2 via the power supply disconnection signal line 201. That is, when the level of the output 202 of the driving power supply 5 on the MOS integrated circuit 6 side is lowered, the output tristate buffer 3 is controlled to a high impedance state. The MOS integrated circuit 2 is powered by the power supply 1 and the MOS integrated circuit 6 is powered by the power supply 5. However, in a normal state, both power supply levels are the same, and the output of the power supply comparison circuit 200 is Not sent out.

【0014】かかる構成において、MOS集積回路2と
MOS集積回路6との双方に所定の電源が加えられてい
る時は比較結果が一致する。よって、電源比較回路200
は出力が止められ、電源断信号線201 を経由したMOS
集積回路2の出力トライステートバッファ3のイネーブ
ル端子はイネーブル状態になる。これにより、MOS集
積回路2の出力トライステートバッファ3とMOS集積
回路6の入力バッファ7との間で電気的に正常な動作を
行う。
In such a structure, the comparison results match when a predetermined power source is applied to both the MOS integrated circuit 2 and the MOS integrated circuit 6. Therefore, the power supply comparison circuit 200
Output is stopped, and the MOS via the power supply disconnection signal line 201
The enable terminal of the output tristate buffer 3 of the integrated circuit 2 becomes the enable state. As a result, an electrically normal operation is performed between the output tristate buffer 3 of the MOS integrated circuit 2 and the input buffer 7 of the MOS integrated circuit 6.

【0015】この状態では、従来回路(図2)で述べた
MOS集積回路2とMOS集積回路6との間のインター
フェースと同様の構成となる。
In this state, the interface is the same as the interface between the MOS integrated circuit 2 and the MOS integrated circuit 6 described in the conventional circuit (FIG. 2).

【0016】ここで、電源比較回路200 は上述の比較動
作によりMOS集積回路6側の電源5を監視しているの
で、電源5の出力202 がMOS集積回路6が正常動作し
ない電圧まで降下した場合、電源断情報を信号線201 に
出力する。この電源断情報が電源断信号線201 を経由し
てMOS集積回路2の出力トライステートバッファ3の
イネーブル端子に与えられると、その時点でMOS集積
回路2の出力トライステートバッファ3はハイインピー
ダンス状態に制御される。
Since the power supply comparison circuit 200 monitors the power supply 5 on the MOS integrated circuit 6 side by the above-described comparison operation, when the output 202 of the power supply 5 drops to a voltage at which the MOS integrated circuit 6 does not operate normally. , Outputs power-off information to the signal line 201. When this power-off information is given to the enable terminal of the output tri-state buffer 3 of the MOS integrated circuit 2 via the power-off signal line 201, the output tri-state buffer 3 of the MOS integrated circuit 2 becomes a high impedance state at that time. Controlled.

【0017】その結果として、信号線100 がハイインピ
ーダンス状態になるので、MOS集積回路6の入力バッ
ファ7が従来回路で説明したようなロウインピーダンス
状態になってもMOS集積回路2からMOS集積回路6
への電流の流れ込みはなくなり、MOS集積回路2の出
力トライステートバッファ3が破壊されることを防ぐこ
とができる。
As a result, since the signal line 100 is in the high impedance state, even if the input buffer 7 of the MOS integrated circuit 6 is in the low impedance state as described in the conventional circuit, the MOS integrated circuits 2 to 6 are integrated.
It is possible to prevent the output tristate buffer 3 of the MOS integrated circuit 2 from being destroyed because the current does not flow into it.

【0018】ここで、電源比較回路200 は、電源5の出
力レベルと電源1の出力レベルとを比較する回路である
が、例えばOPアンプを用いた周知の比較器等で当業者
が容易に構成できる。また、電源1の出力レベルを基準
値とせずに、他の電圧供給源を設けても良い。さらにま
た、実装スペース上の都合から、電源比較回路200 をM
OS集積回路6側に設ける構成も考えられる。
Here, the power supply comparison circuit 200 is a circuit for comparing the output level of the power supply 5 with the output level of the power supply 1. For example, a well-known comparator using an OP amplifier can be easily constructed by those skilled in the art. it can. Further, another voltage supply source may be provided without using the output level of the power supply 1 as the reference value. In addition, the power supply comparison circuit 200 should be M
A configuration provided on the OS integrated circuit 6 side is also conceivable.

【0019】[0019]

【発明の効果】以上説明したように本発明は、入力バッ
ファへの供給電源の出力レベルを、基準値と比較し、電
源異常時に出力側をハイインピーダンス状態にすること
により、異なる電源で駆動されるMOS集積回路間の出
力バッファと入力バッファとが直接接続された構成で、
入力バッファを持つMOS集積回路の電源供給がなくな
った場合でも出力バッファを持つMOS集積回路の破壊
を防ぐことができるという効果がある。
As described above, according to the present invention, the output level of the power supply to the input buffer is compared with the reference value and the output side is set to the high impedance state when the power supply is abnormal, so that the power supplies are driven by different power supplies. In the configuration in which the output buffer and the input buffer between the MOS integrated circuits are directly connected,
Even if the power supply to the MOS integrated circuit having the input buffer is cut off, the MOS integrated circuit having the output buffer can be prevented from being destroyed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例による信号伝達回路の概略構成
図である。
FIG. 1 is a schematic configuration diagram of a signal transmission circuit according to an embodiment of the present invention.

【図2】従来の信号伝達回路の概略構成図である。FIG. 2 is a schematic configuration diagram of a conventional signal transmission circuit.

【符号の説明】[Explanation of symbols]

1,5 電源 2,6 MOS集積回路 3 トライステートバッファ 7 入力バッファ 200 電源比較回路 1,5 power supply 2,6 MOS integrated circuit 3 tri-state buffer 7 input buffer 200 power supply comparison circuit

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H03K 19/003 B 8941−5J H04L 25/02 S 8226−5K 8225−4M H01L 29/78 301 K ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication location H03K 19/003 B 8941-5J H04L 25/02 S 8226-5K 8225-4M H01L 29/78 301 K

Claims (1)

【特許請求の範囲】 【請求項1】 MOS出力バッファと、この出力バッフ
ァの出力信号を入力とするMOS入力バッファと、この
入力バッファへ電源供給する電源回路とを有する信号伝
達回路であって、前記入力バッファへの電源供給レベル
を、基準値と比較する比較回路と、この比較結果により
前記電源供給レベルの低下が検出されたとき前記出力バ
ッファをハイインピーダンス状態にする制御回路とを有
することを特徴とする信号伝達回路。
Claims: What is claimed is: 1. A signal transmission circuit comprising a MOS output buffer, a MOS input buffer that receives an output signal of the output buffer, and a power supply circuit that supplies power to the input buffer. A comparison circuit that compares the power supply level to the input buffer with a reference value; and a control circuit that puts the output buffer into a high impedance state when a decrease in the power supply level is detected by the comparison result. Characteristic signal transmission circuit.
JP3189313A 1991-07-03 1991-07-03 Signal transmission circuit Pending JPH0513696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3189313A JPH0513696A (en) 1991-07-03 1991-07-03 Signal transmission circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3189313A JPH0513696A (en) 1991-07-03 1991-07-03 Signal transmission circuit

Publications (1)

Publication Number Publication Date
JPH0513696A true JPH0513696A (en) 1993-01-22

Family

ID=16239266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3189313A Pending JPH0513696A (en) 1991-07-03 1991-07-03 Signal transmission circuit

Country Status (1)

Country Link
JP (1) JPH0513696A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6606705B1 (en) * 1999-09-15 2003-08-12 Intel Corporation Method and apparatus for configuring an I/O buffer having an initialized default signaling level to operate at a sampled external circuit signaling level
JP2003530733A (en) * 1999-10-28 2003-10-14 シーゲイト テクノロジー エルエルシー Input / output buffer circuit stable against multi-voltage power rise of disk drive
JP2005530342A (en) * 2002-06-14 2005-10-06 トムソン ライセンシング Power supply configuration of protected dual voltage microelectronic circuit
JP2009246652A (en) * 2008-03-31 2009-10-22 Fujitsu Ltd Power status notification method and circuit
JP2013038645A (en) * 2011-08-09 2013-02-21 Ricoh Co Ltd Logic circuit and portable terminal apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6606705B1 (en) * 1999-09-15 2003-08-12 Intel Corporation Method and apparatus for configuring an I/O buffer having an initialized default signaling level to operate at a sampled external circuit signaling level
JP2003530733A (en) * 1999-10-28 2003-10-14 シーゲイト テクノロジー エルエルシー Input / output buffer circuit stable against multi-voltage power rise of disk drive
JP2005530342A (en) * 2002-06-14 2005-10-06 トムソン ライセンシング Power supply configuration of protected dual voltage microelectronic circuit
JP2009246652A (en) * 2008-03-31 2009-10-22 Fujitsu Ltd Power status notification method and circuit
JP2013038645A (en) * 2011-08-09 2013-02-21 Ricoh Co Ltd Logic circuit and portable terminal apparatus

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