JPH05135873A - Manufacture of total solid type membrane electroluminescence element - Google Patents

Abstract

PURPOSE:To manufacture a total solid type membrane electroluminescence(EL) element by restraining the adverse effect of the fatigue of substances and the luminous efficacy in formation layers. CONSTITUTION:A first formation layer 10 is laminated over a first substrate 1 by a PCD method, a second formation layer 20 is laminated over a second substrate 2 by the PVD method, and the first substrate 1 and the second substrate 2 are joined together under a vacuum environment in a state that the surface of the first formation layer 10 and the second formation layer 20 are faced to each other. In this case, for example, in the first substrate 1, since at least merely a second electrode 21 which is laminated to the second substrate 2, is not treated by the PVD method, thermal shock is thereby reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an all-solid-state thin film electroluminescence (EL) element, which is thin and has a small occupied area and volume and is suitable for a light emitting element such as a dial illumination and a display.

[0002]

2. Description of the Related Art As shown in FIG. 8, a thin film EL device includes a first electrode layer 92, a first insulating layer 93, a light emitting layer 94, a second insulating layer 95 and a second electrode which are sequentially stacked on a substrate 91. Layer 96
And a formation layer 90 containing, and between the first electrode layer 92 and the second electrode layer 96 having a predetermined threshold value or more, for example, 100.
The light emitting layer 94 emits light by applying an alternating voltage of v and 1 kHz. Substrate 91, first electrode layer 92
In addition, in the thin film EL element in which the first insulating layer 93 is transparently formed, the light of the light emitting layer 94 is transmitted through the first insulating layer 93 and the first electrode layer 92, and the light is emitted from the substrate 91.

Conventionally, as shown in FIG. 9, a thin film EL element of this type is generally provided with a transparent glass substrate 91 side and a second side.
By covering the electrode layer 96 side with the protective films 97 and 98, an all solid state type is obtained. This all-solid-state thin film EL element is treated as, for example, individual back lighting of a liquid crystal element because the thin film EL element is covered with a protective film. If the protective film has a moisture-proof property, the life can be extended. Planned.

Further, JP-A-1-188894 discloses that the above-mentioned forming layer is provided on a substrate made of a protective film,
An all-solid-state thin film EL element in which a protective film is laminated again on this forming layer is disclosed. This all-solid-state thin film E
Since the L element uses the resin substrate, it is lightweight and flexible. These thin film EL elements are usually formed by sequentially stacking a first electrode layer and the like on a substrate by a PVD method such as a vacuum vapor deposition method or an ion plating method, as disclosed in JP-A-1-200593. Manufactured.

[0005]

However, there is a first problem on the substrate.
All-solid-state thin film E by sequentially laminating electrode layers etc. by PVD method
When the L element is manufactured, the same substrate and the lower layer side of the forming layer must be processed by the PVD method by the number of forming layers.
For this reason, the substrate is easily fatigued due to thermal shock when laminated multiple times, and the lower layer side of the forming layer may also have a bad influence on the luminous efficiency such as peeling or deterioration due to the same thermal shock, which in turn lowers the product yield. May be invited.

[0006] The present invention has been made in view of the above-mentioned conventional problems, and it is possible to manufacture an all-solid-state thin film EL element by suppressing the fatigue of the substrate and the adverse effect of the luminous efficiency in the formation layer. With the goal.

[0007]

Means for Solving the Problems All-solid-state thin film E of the present invention
The method for manufacturing the L element is the first substrate sequentially laminated on the first substrate.
A method for manufacturing an all-solid-state thin film EL device, which has a forming layer including an electrode layer, a first insulating layer, a light emitting layer, a second insulating layer and a second electrode layer, and a second substrate is laminated on the forming layer. A first step of laminating a first formation layer which includes at least the first electrode layer and does not constitute at most the formation layer on the first substrate by a PVD method, and the formation layer on the second substrate. A second step of laminating a second forming layer consisting of the rest of the substrate by a PVD method, and the first substrate and the second substrate with the surface of the first forming layer and the surface of the second forming layer facing each other. And a third step of bonding under vacuum conditions. (A) In the first step, the first formation layer is PVD formed on the first substrate.
Laminate by the method.

As the first substrate, a transparent substrate that can withstand heat in the PVD method can be used. For example, a transparent glass substrate such as barium boron silicate glass, polyethylene terephthalate (PET), polysulfone (PS).
F), polyetherimide (PEI), polyethersulfone (PES), polystyrene (PS), polycarbonate (PC), acrylic (PMMA), or other transparent resin substrate can be used. Incidentally, PET is preferable in terms of material cost and durability, and the continuously usable temperature by the PVD method is about 150 ° C. In addition, PSF, PEI,
PES has a continuous usable temperature of 150 ° C. or higher. The first substrate is not limited to a flat one, but may be a curved one.

The first forming layer includes at least the first electrode layer and at most does not form the entire forming layer. That is, when the forming layer is composed of the first electrode layer, the first insulating layer, the light emitting layer, the second insulating layer and the second electrode layer, the first forming layer is (1) the first electrode layer and (2) the first electrode layer. Electrode layer and first insulating layer, (3) first electrode layer, first insulating layer and light emitting layer, (4) first electrode layer, first
Any one of the insulating layer, the light emitting layer, and the second insulating layer (1) to
It is selected from among (4). In addition to this forming layer, between the first electrode layer and the first insulating layer, between the first insulating layer and the light emitting layer, between the light emitting layer and the second insulating layer, and between the second insulating layer and the second insulating layer. A conductive layer laminated between the two electrode layers may be included. In the formation layer in which such conductive layers are laminated, the conductivity between the layers sandwiching the conductive layers is improved, and suitable luminous efficiency can be exhibited.

As the first electrode layer, In ₂ O ₃ --SnO is used.
₂ (ITO), ZnO: Al (a material obtained by adding a few percent of Al to ZnO. The same applies hereinafter), or the like, can be used. As the first insulating layer, Y
₂ O ₃ , SiO ₂ , Si ₃ N ₄ , Ta ₂ O ₅ , ZnO,
A material made of a transparent high dielectric material such as Sm ₂ O ₃ or Al ₂ O ₃ can be used.

For the light emitting layer, ZnS: Mn, SrS:
Eu, CaS: Eu, ZnS: Sm, ZnS: Tb, S
rS: Ce, ZnS: Tm, ZnS: TbF _{3 and the} like can be adopted. If a transmissive thin film EL element is manufactured, the second insulating layer may be made of a transparent high dielectric material as in the case of the first insulating layer, and a reflective thin film EL element is manufactured. If so, an opaque high dielectric material such as ZrO ₂ can be used.

As the conductive layer, Pd, Pt, Au or the like can be used. As the PVD method in the first step, a vacuum vapor deposition method, an ion plating method, a sputtering method or the like can be adopted. It is desirable to form all the first formation layers by the same method. This is because the evaporation source and the like can be made common, and each layer can be formed by changing the atmosphere gas, so that workability is improved. (B) In the second step, the second formation layer is PVD on the second substrate.
Laminate by the method.

As the second substrate, if a transmissive thin film EL element is to be manufactured, a transparent substrate that can withstand the heat of the PVD method can be adopted as in the first substrate. For example, a transparent glass substrate, A transparent resin substrate can be used, and if a reflective thin film EL element is manufactured, a material that can withstand the heat of the PVD method can be adopted. The second substrate is not limited to the planar one, but if it has a curved shape, it needs to have a shape that matches the first substrate.

The second forming layer comprises the rest of the forming layer. That is, the forming layer is the first electrode layer, the first insulating layer, the light emitting layer, and the second layer.
In the case of including the insulating layer and the second electrode layer, if the (1) first electrode layer is selected as the first forming layer, the second forming layer is (1 ′).
The second electrode layer, the second insulating layer, the light emitting layer, and the first insulating layer. If the (2) first electrode layer and the first insulating layer are selected as the first forming layer, the second forming layer is (2 ′) the second electrode layer, the second
It is composed of an insulating layer and a light emitting layer. When (3) the first electrode layer, the first insulating layer and the light emitting layer are selected as the first forming layer, the second forming layer is composed of the (3 ′) second electrode layer and the second insulating layer. When (4) the first electrode layer, the first insulating layer, the light emitting layer and the second insulating layer are selected as the first forming layer, the second forming layer is composed of the (4 ′) second electrode layer.

As the second electrode layer, if a transmissive thin film EL element is manufactured, a transparent conductive material can be used as in the case of the first electrode layer, and a reflective thin film EL element is used. In the case of manufacturing, a material made of a conductive material such as a metal such as Al can be used. Second
As the PVD method in the process, a vacuum vapor deposition method, an ion plating method, a sputtering method or the like can be adopted. For the same reason as in the first step, it is desirable to form all the second formation layers by the same method. Further, for the same reason as in the first step, it is desirable that the first forming layer and the second forming layer are all formed by the same method in the first step and the second step. (C) In the third step, the first substrate and the second substrate are bonded under a vacuum condition with the surface of the first forming layer and the surface of the second forming layer facing each other. For bonding, an adhesive can be used if the first or second substrate is a glass substrate, and heat welding can be used if the first and second substrates are resin substrates. At this time, wirings to be connected to an external power source are provided on the first electrode layer and the second electrode layer by soldering, pressure bonding, a connector, a conductive adhesive or the like. As a result, the all-solid-state thin film EL device is completed.

[0016]

In the method of manufacturing an all-solid-state thin film EL element of the present invention, first, the first forming layer is laminated on the first substrate by the PVD method, and the second forming layer is laminated on the second substrate by the PVD method. .. Then, the first substrate and the second substrate are bonded under a vacuum condition with the surface of the first forming layer and the surface of the second forming layer facing each other. At this time, the surface of the first formation layer and the surface of the second formation layer are laminated by the PVD method, and are preferably closely contacted.

Therefore, the first substrate is the second of the forming layers.
The PVD method is not performed for at least the second electrode layer laminated on the substrate. On the other hand, the second substrate is not subjected to the PVD process for at least the first electrode layer laminated on the first substrate among the formation layers. Therefore, the thermal shock of the first and second substrates is reduced by the reduced number of PVD processes, and the first and second substrates are less prone to fatigue.

Further, at least the first electrode layer laminated on the first substrate is not treated by the PVD method by at least the second electrode layer laminated on the second substrate among the forming layers. On the contrary, at least the second electrode layer laminated on the second substrate is
Of the forming layers, at least the first electrode layer laminated on the first substrate is not treated by the PVD method. Therefore, the thermal shock is reduced by the reduced number of PVD treatments on the first and second substrate sides of the formation layer, and the adverse effect on the luminous efficiency is less likely to occur.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. (Example 1) {First Step} As shown in FIG. 1, a square planar transparent PET having a thickness of about 100 μm was prepared as a first substrate 1, and a first electrode layer was formed on the first substrate 1. 11 as thickness 2
ITO of about 000Å is laminated by a vacuum deposition method. Then, a first insulating layer 12 having a thickness of 1 is formed on the first electrode layer 11.
Y ₂ O _{3 of} about 0000 Å is laminated by a vacuum evaporation method,
ZnS: Mn having a thickness of about 5000 Å is formed as a light emitting layer 13 on the first insulating layer 12 by an evaporation source in which Mn as an emission center is added to ZnS in an amount of about 0.5 to 1 mol% with respect to ZnS. Laminate by a vacuum evaporation method. Then, a second insulating layer 14 having a thickness of 10000Å is formed on the light emitting layer 13.
About Y ₂ O ₃ is laminated by a vacuum evaporation method.

Thus, the first electrode layer 11 is formed on the first substrate 1.
The first forming layer 10 including the first insulating layer 12, the light emitting layer 13, and the second insulating layer 14 is formed. {Second step} As the second substrate 2, a square planar transparent PET having a thickness of about 100 μm is prepared.
The second electrode layer 21 is formed on the top with an IT of about 2000 Å.
O is laminated by a vacuum vapor deposition method.

Thus, the second electrode layer 21 is formed on the second substrate 2.
The second formation layer 20 of is formed. {Third step} A first substrate 1 having the first forming layer 10 obtained in the first step and a second substrate 2 having the second forming layer 20 obtained in the second step are prepared. The surface of the first forming layer 10 and the surface of the second forming layer 20 are opposed to each other. At this time, wirings connected to the external power supply are soldered to the first electrode layer 11 and the second electrode layer 21. Then, the three sides of the first substrate 1 and the second substrate 2 are joined by heat welding, and the wiring portion is also kept airtight. In this state, the inside air is exhausted from the other side, and when it is sufficiently exhausted, that side is also heat-welded. At this time, the surface of the second insulating layer 14 and the surface of the second electrode layer 21 are laminated by a vacuum vapor deposition method, and are preferably in close contact with each other.

Thus, as shown in FIG. 2, a transmission type all-solid-state thin film EL element was completed. This all-solid-state thin film EL
The element was one in which the fatigue of the first and second substrates 1 and 2 and the adverse effect of the luminous efficiency of the first and second formation layers 10 and 20 were suppressed. Further, this all-solid-state thin film EL device has flexible PE as the first and second substrates 1 and 2.
Since T is adopted, even when it is mounted on, for example, an automobile or a train and is easily subjected to vibration or impact, it can exhibit suitable durability as compared with a transparent glass substrate. Further, this all-solid-state thin film EL element was lighter in weight than the one using the glass substrate. Example 2 {First Step} As shown in FIG. 3, a PET of the same type as that of Example 1 is prepared as the first substrate 3, and a first electrode layer of the same type as that of Example 1 is provided on the first substrate 3. 31, the first insulating layer 32, and the light emitting layer 33 are stacked. Thus, the first forming layer 30 including the first electrode layer 31, the first insulating layer 32, and the light emitting layer 33 is formed on the first substrate 3.

{Second Step} As the second substrate 4, PET of the same type as in Example 1 is prepared, and the second electrode layer 41 and the second insulating layer 42 of the same type as in Example 1 are provided on the second substrate 4. Stack.
Thus, the second forming layer 40 including the second electrode layer 41 and the second insulating layer 42 is formed on the second substrate 4.

{Third step} The first step obtained in the first step
The first substrate 3 having the formation layer 30 and the second substrate 4 having the second formation layer 40 obtained in the second step are prepared, and the first substrate 3 and the second substrate 3 are prepared as in the first embodiment. 4 and 4 are joined under vacuum conditions. Thus, also in this manufacturing method, the transmission-type all-solid-state thin film E capable of exhibiting the same effect as that of the first embodiment.
The L element is completed. In particular, in this manufacturing method, although the light emitting layer 33 is laminated between the first substrate 3 and the second substrate 4, the thermal shock to the first substrate 3 and the second substrate 4 is most reduced. Therefore, compared with the manufacturing method of Example 1,
The effect of the present invention was able to be exhibited further. Example 3 {First Step} As shown in FIG. 4, a PET of the same type as that of Example 1 is prepared as the first substrate 5, and a first electrode layer of the same type as that of Example 1 is provided on the first substrate 5. 51, the first insulating layer 52, the light emitting layer 53, and the second insulating layer 54 are laminated. Further, Pd having a thickness of about 100 to 300 Å is laminated as a conductive layer 55 on the second insulating layer 54 by a vacuum deposition method. Thus, the first electrode layer 51, the first insulating layer 52, and the light emitting layer 53 are formed on the first substrate 5.
A first formation layer 5 including a second insulation layer 54 and a conduction layer 55
Form 0.

{Second Step} PET of the same type as that of the first embodiment is prepared as the second substrate 6, and the second electrode layer 61 of the same type as that of the first embodiment is laminated on the second substrate 6. Thus, the second formation layer 60 including the second electrode layer 61 is formed on the second substrate 6. {Third step} The first substrate 5 having the first forming layer 50 obtained in the first step and the second substrate 6 having the second forming layer 60 obtained in the second step are prepared, Similar to Example 1,
The first substrate 5 and the second substrate 6 are bonded under vacuum conditions.

Thus, also in this manufacturing method, as shown in FIG.
As shown in, a transmission type all-solid-state thin film EL element capable of exhibiting the same effects as in Example 1 is completed. Particularly, in this manufacturing method, since the conductive layer 55 is laminated between the second insulating layer 54 and the second electrode layer 61, the second insulating layer 54
The conductivity between the second electrode layer 61 and the second electrode layer 61 was improved, and more suitable light emission efficiency could be exhibited. (Example 4) {First step} As shown in FIG. 6, as the first substrate 7, a transparent flat barium boron silicate glass having a thickness of 1.1 mm and having a square planar shape was prepared, and masking was performed except for the outer periphery. gave. Inside the first substrate 7, a first electrode layer 71, a first insulating layer 72, and a light emitting layer 73, which are of the same type as in Example 1, are laminated. Thus, the first electrode layer 71 and the first insulating layer 7 are formed on the first substrate 7.
The first forming layer 70 including the light emitting layer 73 and the light emitting layer 73 is formed.
After forming the first formation layer 70, the masking was removed.

{Second Step} As the second substrate 8, the thickness 1.
A 1 mm square flat transparent barium borosilicate glass is prepared, and a second electrode layer 81 and a second insulating layer 82 of the same kind as in Example 1 are laminated on this second substrate 8 as in the first step. To do. Thus, the second forming layer 80 including the second electrode layer 81 and the second insulating layer 82 is formed on the second substrate 8. After forming the second formation layer 80, the masking was removed.

{Third step} The first step obtained in the first step
The first substrate 7 having the forming layer 70 and the second substrate 8 having the second forming layer 80 obtained in the second step are prepared, and the surface of the first forming layer 70 and the second forming layer 80 are prepared, respectively. Face the surface. At this time, wirings connected to the external power supply are soldered to the first electrode layer 71 and the second electrode layer 81. Then, the first substrate 7 and the second substrate 8 are airtightly bonded to each other at their outer circumferences under a vacuum condition using an adhesive.

Thus, as shown in FIG. 7, a transmission type all-solid-state thin film EL element is completed. In this manufacturing method, since a glass substrate that is inflexible and heavy is adopted, it is not possible to exert the effects of durability such as vibration and weight reduction as in Example 1, but Further, the effects of the present invention, namely, the fatigue of the second substrates 7 and 8 and the adverse effect of the luminous efficiency of the first and second formation layers 70 and 80 can be exhibited. Example 5 {First Step and Second Step} As shown in FIG. 3, a PET of the same type as that of Example 1 is prepared as the first substrate 3, and the same type of PET as that of Example 1 is provided on the first substrate 3. The first electrode layer 31 and the first insulating layer 32 are laminated by the PVD method.

Further, as the second substrate 4, PET of the same type as in Example 1 is prepared, and the second electrode layer 41 and the second insulating layer 42 of the same type as in Example 1 are formed on the second substrate 4 by the PVD method. Stack. Thus, the second electrode layer 41 and the second electrode layer 41 are formed on the second substrate 4.
The second formation layer 40 including the insulating layer 42 is formed. After that, a shielding plate is sandwiched between the second insulating layer 42 of the second substrate 4 and the PVD evaporation source, and the light emitting layer 33 of the same type as in Example 1 is laminated only on the first insulating layer 32 of the first substrate 3. To do. Thus, the first forming layer 30 including the first electrode layer 31, the first insulating layer 32, and the light emitting layer 33 is formed on the first substrate 3.

{Third Step} The first substrate 3 having the first forming layer 30 obtained in the first step and the second step and the second substrate 4 having the second forming layer 40 are the first embodiment. Similarly, bonding was performed under vacuum conditions to obtain a transmissive all-solid-state thin film EL device.
In this manufacturing method, the same effect as that of the first embodiment can be obtained, and since the first step and the second step can be performed at the same time, it is possible to shorten the steps.

[0032]

As described in detail above, in the method of manufacturing an all-solid-state thin film EL element of the present invention, the first forming layer is laminated on the first substrate by the PVD method, and the second forming layer is formed on the second substrate. Layer P
Since the first substrate and the second substrate are laminated by a VD method and then the surface of the first forming layer and the surface of the second forming layer face each other under a vacuum condition, the first and second substrates are formed. It is possible to suppress the fatigue of the substrate and the adverse effect of the luminous efficiency on the formation layer.

Further, according to this manufacturing method, the first forming layer and the second forming layer can be simultaneously formed using the first substrate and the second substrate, so that the manufacturing time can be shortened. .. Therefore, according to this manufacturing method, the all-solid-state thin film EL element can be manufactured with a good yield.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a manufacturing process of an all-solid-state thin film EL element of Example 1.

FIG. 2 is a cross-sectional view of the all-solid-state thin film EL element of Example 1.

FIG. 3 is a cross-sectional view showing a manufacturing process of all-solid-state thin film EL elements of Examples 2 and 5.

FIG. 4 is a cross-sectional view showing the manufacturing process of the all-solid-state thin film EL element of Example 3;

FIG. 5 is a cross-sectional view of an all-solid-state thin film EL device of Example 3.

FIG. 6 is a cross-sectional view showing the manufacturing process of the all-solid-state thin film EL element of Example 4.

FIG. 7 is a sectional view of an all-solid-state thin film EL device of Example 4.

FIG. 8 is a cross-sectional view showing a manufacturing process of a conventional all-solid-state thin film EL element.

FIG. 9 is a cross-sectional view of a conventional all-solid-state thin film EL element.

[Explanation of symbols]

1, 3, 5, 7 ... First substrate 2, 4, 6, 8
... Second substrate 11, 31, 51, 71 ... First electrode layer 12, 32, 5
2, 72 ... First insulating layer 13, 33, 53, 73 ... Light emitting layer 14, 42, 5
4, 82 ... 2nd insulating layer 21, 41, 61, 81 ... 2nd electrode layer 10, 30, 5
0, 70 ... First formation layer 20, 40, 60, 80 ... Second formation layer

Claims (1)

[Claims] 1. A first electrode layer sequentially laminated on a first substrate,
A method for manufacturing an all-solid-state thin film electroluminescent element, which has a forming layer including a first insulating layer, a light emitting layer, a second insulating layer and a second electrode layer, and a second substrate is laminated on the forming layer, A first formation layer, which includes at least the first electrode layer and does not constitute at most the formation layer, is formed on the first substrate by PVD.
First step of laminating by a PVD method, a second step of laminating a second formation layer consisting of the remaining part of the formation layer on the second substrate, a surface of the first formation layer and the second formation A method of manufacturing an all-solid-state thin film electroluminescent device, comprising a third step of bonding the first substrate and the second substrate under a vacuum condition with the surfaces of the layers facing each other.