JPH0513005Y2 - - Google Patents
Info
- Publication number
- JPH0513005Y2 JPH0513005Y2 JP1986015251U JP1525186U JPH0513005Y2 JP H0513005 Y2 JPH0513005 Y2 JP H0513005Y2 JP 1986015251 U JP1986015251 U JP 1986015251U JP 1525186 U JP1525186 U JP 1525186U JP H0513005 Y2 JPH0513005 Y2 JP H0513005Y2
- Authority
- JP
- Japan
- Prior art keywords
- plasma generation
- waveguide
- generation chamber
- plasma
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011810 insulating material Substances 0.000 claims description 16
- 230000002265 prevention Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 23
- 238000000605 extraction Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は半導体装置等の製造のためのプラズマ
CVD（Chemical Vapor Deposition）装置、エツ
チング装置、スパツタリング装置として用いられ
るプラズマ装置におけるマイクロ波漏洩防止構造
に関するものである。[Detailed description of the invention] [Industrial application field] The present invention is a plasma processing method for manufacturing semiconductor devices, etc.
The present invention relates to a structure for preventing microwave leakage in a plasma device used as a CVD (Chemical Vapor Deposition) device, an etching device, or a sputtering device.
電子サイクロトロン共鳴を利用したプラズマ装
置は低ガス圧で活性度の高いプラズマを生成出
来、イオンエネルギの広範囲な選択が可能であ
り、また大きなイオン電流がとれ、イオン流の指
向性、均一性に優れるなどの利点があり、高集積
半導体装置の製造に欠かせないものとしてその研
究、開発が進められている。
Plasma equipment using electron cyclotron resonance can generate highly active plasma at low gas pressure, allows a wide range of ion energies to be selected, and has a large ion current, with excellent directionality and uniformity of ion flow. Due to its advantages, research and development are progressing as it is indispensable for manufacturing highly integrated semiconductor devices.
第４図はプラズマエツチング装置として構成し
た従来の電子サイクロトロン共鳴を利用したプラ
ズマ装置の縦断面図であり、３１は中空円筒状の
プラズマ生成室を示している。プラズマ生成室３
１は周囲壁を２重構造にして冷却水の通流室３１
ａを備え、また一側壁中央にはマイクロ波導入口
３１ｃを、更に他側壁中央には絶縁マイクロ波導
入口３１ｃと対向する位置に円形の遮閉板３１ｈ
と引出電極３１ｄより構成されるイオン引出口を
夫々備えており、前記マイクロ波導入口３１ｃに
は石英ガラス板３１ｂを嵌着した導波管３２の一
端が図示しないマイクロ波遮断膜を用いて周囲を
シールした状態で接続され、またイオン引出口に
臨ませて中空直方体形のエツチング室３３を同じ
く図示しないマイクロ波遮断膜を用いて周囲をシ
ールした状態で配設し、更に周囲にはプラズマ生
成室３１及びこれに接続した導波管３２の一端部
にわたつてこれらを囲繞する態様でこれらと同心
状に円環状の励磁コイル３４を配設してある。導
波管３２の他端部は図示しないマグネトロンに接
続されており、またエツチング室３３内における
プラズマ引出口と対向する位置には載置台３６が
設置され、この載置台３６表面に半導体ウエーハ
等である試料３５を載置するようになつている。 FIG. 4 is a longitudinal cross-sectional view of a conventional plasma device utilizing electron cyclotron resonance configured as a plasma etching device, and numeral 31 indicates a hollow cylindrical plasma generation chamber. Plasma generation chamber 3
1 is a cooling water circulation chamber 31 with a double structure surrounding the wall.
a, and a microwave inlet 31c at the center of one side wall, and a circular shielding plate 31h at a position facing the insulating microwave inlet 31c at the center of the other side wall.
and an extraction electrode 31d, and one end of a waveguide 32 with a quartz glass plate 31b fitted in the microwave introduction port 31c is surrounded by a microwave shielding film (not shown). A hollow rectangular parallelepiped etching chamber 33 is connected in a sealed manner and facing the ion extraction port, and the periphery thereof is sealed using a microwave shielding film (not shown). An annular excitation coil 34 is disposed concentrically over one end of the waveguide 31 and the waveguide 32 connected thereto so as to surround them. The other end of the waveguide 32 is connected to a magnetron (not shown), and a mounting table 36 is installed in the etching chamber 33 at a position facing the plasma outlet. A certain sample 35 is placed thereon.
而してこのようなプラズマエツチング装置にあ
つては、プラズマ生成室３１内にプラズマを生成
させ、プラズマ室に高電圧を印加することにより
遮閉板３１ｈと引出電極３１ｄ間に形成される電
界によつて生成させたプラズマからイオンビーム
をエツチング室３３内の試料３５上に投射せしめ
て、試料３５表面をエツチングするようになつて
いる（特開昭60−51537号）。 In such a plasma etching apparatus, by generating plasma in the plasma generation chamber 31 and applying a high voltage to the plasma chamber, an electric field formed between the shielding plate 31h and the extraction electrode 31d is controlled. An ion beam from the thus generated plasma is projected onto the sample 35 in the etching chamber 33 to etch the surface of the sample 35 (Japanese Patent Laid-Open No. 51537/1983).
ところでこのような従来のプラズマ装置にあつ
てはプラズマ生成室３１と導波管３２との接続
部、或いはプラズマ生成室３１とエツチング室３
３、励磁コイル３４との接続部の如き電気的絶縁
部が必要であり、しかも絶縁材の使用によつて逆
にマイクロ波漏洩の虞れのある部分には、マイク
ロ波遮断膜等を用いてその漏洩を防止することが
行われていたが、遮断膜自体にマイクロ波による
電位が生じ易く、放電、自己発熱等の危険性が高
く、またコイル等の移動調節は、漏洩の危険性が
増大するため極めて困難であるなどの問題があつ
た。
By the way, in such a conventional plasma apparatus, there is no connection between the plasma generation chamber 31 and the waveguide 32, or between the plasma generation chamber 31 and the etching chamber 3.
3. In areas where electrical insulation is required, such as the connection with the excitation coil 34, and where there is a risk of microwave leakage due to the use of insulating material, use a microwave blocking film or the like. Measures have been taken to prevent leakage, but the barrier membrane itself tends to generate electric potential due to microwaves, which poses a high risk of electrical discharge and self-heating, and adjusting the movement of coils increases the risk of leakage. There were some problems, such as the fact that it was extremely difficult to do so.
本考案はかかる事情に鑑みなされたものであつ
て、その目的とするところはプラズマ生成室と導
波管、試料室相互の間の電気的絶縁性を確保する
と共に、この電気的絶縁性を確保することに伴つ
て生じるマイクロ波の漏洩も比較的簡単な構造で
確実に防止し得るようにしたプラズマ装置におけ
るマイクロ波漏洩防止構造を提供するにある。
The present invention was developed in view of these circumstances, and its purpose is to ensure electrical insulation between the plasma generation chamber, waveguide, and sample chamber, and to ensure this electrical insulation. It is an object of the present invention to provide a structure for preventing microwave leakage in a plasma device, which can reliably prevent leakage of microwaves caused by this process with a relatively simple structure.
本考案に係るマイクロ波の漏洩防止構造は、マ
イクロ波を伝送する導波管と、前記導波管に接続
されたプラズマ生成室と、前記プラズマ生成室に
連結された試料室とを備えたプラズマ装置におい
て、プラズマ生成室と導波管及び／又は試料室と
の間の対向面間に絶縁材を介在させると共に、対
向面の一方にはマイクロ波の基本定存波を形成す
べく袋小路状をなす絶縁領域を形成したことを特
徴とする。 A microwave leakage prevention structure according to the present invention includes a waveguide for transmitting microwaves, a plasma generation chamber connected to the waveguide, and a sample chamber connected to the plasma generation chamber. In the apparatus, an insulating material is interposed between the opposing surfaces between the plasma generation chamber and the waveguide and/or the sample chamber, and one of the opposing surfaces is provided with a blind alley shape in order to form a fundamental standing wave of microwaves. It is characterized by forming an insulating region.
〔作用〕
本考案にあつてはプラズマ生成室と導波管及
び／又は試料室との対向面間に絶縁材を介在させ
たので高電圧部と、接地部との間を確実に絶縁状
態に維持出来ると共に、対向面の一方に袋小路状
をなす絶縁領域を形成し、この絶縁領域内にマイ
クロ波の基本定在波を生ぜしめることとしたの
で、絶縁材を介在させることによつて生じる絶縁
材を通じてのマイクロ波の漏洩をも防止し得るこ
ととなる。[Function] In the present invention, an insulating material is interposed between the facing surfaces of the plasma generation chamber and the waveguide and/or sample chamber, so that the high voltage section and the ground section are reliably insulated. At the same time, we decided to form an insulating region in the shape of a dead end on one of the opposing surfaces and generate a fundamental microwave standing wave within this insulating region, so that the insulation created by interposing the insulating material could be maintained. This also makes it possible to prevent microwaves from leaking through the material.
以下本考案をプラズマエツチング装置に適用し
た実施例を示す図面に基づき具体的に説明する。
第１図は、本考案に係るプラズマ装置のマイクロ
波漏洩防止構造（以下本案構造という）の縦断面
図であり、図中１はプラズマ生成室、２は導波
管、３は試料室を構成するエツチング室、４は励
磁コイルを示している。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention applied to a plasma etching apparatus will be described in detail below with reference to the drawings.
FIG. 1 is a longitudinal cross-sectional view of a microwave leakage prevention structure (hereinafter referred to as the proposed structure) of a plasma device according to the present invention, in which 1 is a plasma generation chamber, 2 is a waveguide, and 3 is a sample chamber. 4 indicates an exciting coil.
プラズマ生成室１はステンレス鋼製で中空円筒
形に形成され、周囲壁は二重構造に構成されて冷
却水の通流室１ａを備え、上部側壁の中央には石
英ガラス板１ｂにて封止されたマイクロ波導入口
１ｃを備え、またこれと対向する下部壁の中央に
は遮蔽板１ｈと引出電極１ｄより構成されるイオ
ン引出口が開口せしめられている。前記マイクロ
波導入口１ｃには四角筒形をなす導波管２の一端
部が接続せしめられ、またプラズマ引出口１ｄに
臨ませて中空直方体形のエツチング室３が配設さ
れ、そしてプラズマ生成室１とこれに接続した導
波管２の端部にわたつて、励磁コイル４が周設さ
れている。 The plasma generation chamber 1 is made of stainless steel and has a hollow cylindrical shape, and the surrounding wall has a double structure and includes a cooling water circulation chamber 1a, and the center of the upper side wall is sealed with a quartz glass plate 1b. The microwave inlet 1c is provided with a microwave inlet 1c, and an ion extraction port consisting of a shielding plate 1h and an extraction electrode 1d is opened in the center of the lower wall opposite to the microwave inlet 1c. One end of a rectangular cylindrical waveguide 2 is connected to the microwave inlet 1c, and a hollow rectangular parallelepiped etching chamber 3 is provided facing the plasma outlet 1d. An excitation coil 4 is disposed around the waveguide 2 and the end of the waveguide 2 connected thereto.
導波管２の他端部は図示しないマグネトロンに
接続されており、このマグネトロンで発生したマ
イクロ波を導波管２を通じてプラズマ生成室１に
導入するようになつている。また、励磁コイル４
は図示しない定電流電源に接続されるようになつ
ており、電流の通流によつてプラズマ生成室１内
へのマイクロ波の導入によりプラズマが生成する
よう磁界を形成している。また、プラズマ生成室
１に高電圧を印加することによりイオンビームを
エツチング室３側に向けて投射すべく遮閉板１ｈ
と引出電極１ｄの間に電界を形成するように構成
されている。 The other end of the waveguide 2 is connected to a magnetron (not shown), and microwaves generated by the magnetron are introduced into the plasma generation chamber 1 through the waveguide 2. In addition, the excitation coil 4
is connected to a constant current power supply (not shown), and a magnetic field is formed so that plasma is generated by introducing microwaves into the plasma generation chamber 1 by passing current. In addition, a shielding plate 1h is installed to project the ion beam toward the etching chamber 3 by applying a high voltage to the plasma generation chamber 1.
The structure is such that an electric field is formed between the lead electrode 1d and the lead electrode 1d.
一方エツチング室３は、イオン引出口と対向す
る下側壁に排気系３ｂに連なる排気口３ａが設け
られ、またイオン引出口と対向する中央には、載
置台５が設置され、この載置台５表面に試料６を
静電吸着によつて着脱可能に固定し得るようにし
てある。 On the other hand, the etching chamber 3 is provided with an exhaust port 3a connected to an exhaust system 3b on the lower wall facing the ion extraction port, and a mounting table 5 is installed in the center facing the ion extraction port. The sample 6 can be removably fixed by electrostatic adsorption.
そして本考案にあつては、前記プラズマ生成室
１と導波管２及びエツチング室３との各連結部分
に第２，３図に示す如きマイクロ波の漏洩防止構
造が採られている。 In the present invention, a structure for preventing leakage of microwaves as shown in FIGS. 2 and 3 is adopted at each connecting portion between the plasma generation chamber 1, the waveguide 2, and the etching chamber 3.
第２図はプラズマ生成室１と導波管２との連結
部の拡大断面図であり、プラズマ生成室１の上端
部周縁には、支持リング部１１が一体的に固定さ
れ、この支持リング部１１上には保持リング１
２、絶縁材１６を介在させて押えリング１３が同
心に配置され、これらリング１１，１２，１３の
内側には石英ガラス板１ｂ、蓋体１５が配設さ
れ、蓋体１５の中心に穿つた孔１５ａに整合させ
て導波管２の一端を固定すると共に、蓋体１５自
体はそのフランジ１５ｂ、保持リング１２を貫通
して支持リング１１に複数のフエノール樹脂製の
ボルト１５ｃを螺合貫通させることによつて支持
リング１１に一体的に固定されている。 FIG. 2 is an enlarged cross-sectional view of the connecting portion between the plasma generation chamber 1 and the waveguide 2. A support ring portion 11 is integrally fixed to the upper edge of the plasma generation chamber 1. 11 has a retaining ring 1 on it.
2. A retaining ring 13 is arranged concentrically with an insulating material 16 interposed therebetween, and inside these rings 11, 12, 13, a quartz glass plate 1b and a lid 15 are arranged, and a hole is bored in the center of the lid 15. One end of the waveguide 2 is fixed in alignment with the hole 15a, and a plurality of phenolic resin bolts 15c are screwed through the support ring 11 through the flange 15b and the retaining ring 12 of the lid 15 itself. It is thereby integrally fixed to the support ring 11.
支持リング１１は冷却水の給水系１ｅの通水路
１１ａ、ガス供給系１ｇのための通気路１１ｂを
備えると共に、内周面下端には内フランジ１１ｃ
を備え、その上面に形成したＯリング溝１１ｄ内
にＯリング１１ｅを嵌設してあり、このＯリング
１１ｅに接して石英ガラス板１ｂが嵌め込まれて
いる。 The support ring 11 includes a water passage 11a for the cooling water supply system 1e, a ventilation passage 11b for the gas supply system 1g, and an inner flange 11c at the lower end of the inner peripheral surface.
An O-ring 11e is fitted into an O-ring groove 11d formed on the upper surface of the O-ring 11e, and a quartz glass plate 1b is fitted in contact with the O-ring 11e.
また、支持リング１１の上端面の内周には全周
にわたつてリング部１１ｆを備え、またこれと対
向させて支持リング１１の上端面の外周には保持
リング１２の下端部が外嵌せしめられている。 Further, a ring portion 11f is provided on the inner periphery of the upper end surface of the support ring 11 over the entire circumference, and the lower end portion of the retaining ring 12 is externally fitted on the outer periphery of the upper end surface of the support ring 11 in opposition to this. It is being
保持リング１２は前記支持リング１１の通水路
１１ａ、通気路１１ｂと対向する位置に夫々パイ
プ挿通用の孔１２ａ，１２ｂを備えている。また
保持リング１２はその下側過半部の内径は支持リ
ング１１の内径よりも大きくし、上端部には内フ
ランジ１２ｃを備えており、支持リング１１に外
嵌した状態においては、支持リング１１の上端
面、リング部１１ｆと保持リング１２の内周面内
フランジ１２ｃとの間に蓋体１５の内周と対向す
る側に開口部をもつ凹溝１４が形成されている。 The retaining ring 12 is provided with holes 12a and 12b for pipe insertion at positions facing the water passage 11a and the ventilation passage 11b of the support ring 11, respectively. The inner diameter of the lower half of the retaining ring 12 is larger than the inner diameter of the support ring 11, and the upper end is provided with an inner flange 12c. A groove 14 having an opening on the side facing the inner circumference of the lid body 15 is formed between the ring portion 11f and the inner flange 12c of the retaining ring 12 on the upper end surface.
凹溝１４の深さ及び凹溝１４の内底から蓋体１
５の下面、換言すれば蓋体１５と支持リング１１
との対向面の下端縁に至る迄の寸法は凹溝１４内
にてマイクロ波の基本定在波が形成されるよう
λ／２の整数倍に設定してある。即ち、凹溝１４
の内奥面から凹溝１４の開口部迄の寸法がλ／
４、また開口部中央から支持リング１１と蓋体１
５との対向面の内端縁迄の寸法がλ／４となるよ
うにしてある。 From the depth of the groove 14 and the inner bottom of the groove 14 to the lid body 1
5, in other words, the lid body 15 and the support ring 11
The dimension up to the lower edge of the surface facing the groove 14 is set to an integral multiple of λ/2 so that a fundamental microwave standing wave is formed within the groove 14. That is, the groove 14
The dimension from the innermost surface to the opening of the groove 14 is λ/
4. Also, remove the support ring 11 and the lid 1 from the center of the opening.
The dimension up to the inner edge of the surface facing 5 is λ/4.
そしてこの凹溝１４を含む蓋体１５と対向する
保持リング１２の上面及び内周面、並びに支持リ
ング１１の内面上部並びに石英ガラス板１ｃの周
縁部上面にわたつてフツ素樹脂（商品名テフロン
等）製の絶縁材１６が介在せしめられ、これによ
つてプラズマ生成室１と導波管２とは絶縁状態に
維持せしめられている。 The upper surface and inner circumferential surface of the retaining ring 12 facing the lid 15 including the groove 14, the upper inner surface of the supporting ring 11, and the upper surface of the peripheral edge of the quartz glass plate 1c are covered with a fluorine resin (trade name: Teflon, etc.). ) is interposed, thereby maintaining the plasma generation chamber 1 and the waveguide 2 in an insulated state.
１方、プラズマ生成室１とエツチング室３との
連結部は第３図に示す如く構成されている。第３
図はプラズマ生成室１とエツチング室３との連結
部を示す部分拡大断面図である。プラズマ生成室
１の外周面下端にはフランジ１７が設けられ、こ
れを貫通してエツチング室３の外壁３ｅにフエノ
ール樹脂製のボルト１７ａを螺合せしめることに
より、これに一体的に固定されている。またプラ
ズマ生成室１の下部中央に開口したイオン引出口
には、上端にマイクロ波遮蔽板１ｈを設けた支持
リング１８がフランジ１７の内周に、また上端に
プラズマ引出電極１ｄを固定した支持リング１９
がエツチング室３の外壁３ｅに穿つた孔の内周に
夫々固定されている。そしてプラズマ生成室１の
フランジ１７の内周面と、支持リング１８の外周
面との間、エツチング室３の外壁３ｅの孔の内周
面と、支持リング１９の外周面との間、並びにフ
ランジ１７と外壁３ｅとの対向部位間にフツソ樹
脂製の絶縁材９を介在させてある。 On the other hand, the connecting portion between the plasma generation chamber 1 and the etching chamber 3 is constructed as shown in FIG. Third
The figure is a partially enlarged cross-sectional view showing the connecting portion between the plasma generation chamber 1 and the etching chamber 3. As shown in FIG. A flange 17 is provided at the lower end of the outer peripheral surface of the plasma generation chamber 1, and is integrally fixed to the outer wall 3e of the etching chamber 3 by passing through the flange 17 and screwing a bolt 17a made of phenol resin into the outer wall 3e. . In addition, at the ion extraction port opened at the center of the lower part of the plasma generation chamber 1, a support ring 18 with a microwave shielding plate 1h provided at the upper end is attached to the inner periphery of the flange 17, and a support ring 18 with a plasma extraction electrode 1d fixed to the upper end thereof. 19
are fixed to the inner peripheries of holes bored in the outer wall 3e of the etching chamber 3, respectively. Between the inner peripheral surface of the flange 17 of the plasma generation chamber 1 and the outer peripheral surface of the support ring 18, between the inner peripheral surface of the hole in the outer wall 3e of the etching chamber 3 and the outer peripheral surface of the support ring 19, and between the flange An insulating material 9 made of a soft resin is interposed between the facing portion of the outer wall 3e and the outer wall 3e.
フランジ１７の下面にはＯリング溝１７ｂを設
けて絶縁材９に接するＯリング１７ｃを介在さ
せ、また別に支持リング１８の外囲に位置して凹
溝１７ｄを形成し、この凹溝１７ｄの開口部を一
部覆うようにカバーリング１７ｅを固定して袋小
路状とし、この袋小路状の凹溝１７ｄ内にも絶縁
材９を密に嵌め込んで絶縁領域を形成してある。 An O-ring groove 17b is provided on the lower surface of the flange 17, with an O-ring 17c in contact with the insulating material 9 interposed therebetween, and a groove 17d is separately formed at the outer circumference of the support ring 18, and the opening of this groove 17d is formed. A cover ring 17e is fixed so as to partially cover the area to form a blind alley, and an insulating material 9 is tightly fitted into the blind groove 17d to form an insulating area.
この凹溝１７ｄの幅寸法及び内奥底からフラン
ジ１７と外壁３ｅとの間の外端縁に至る寸法はマ
イクロ波が凹溝１７ｄ内で基本定在波を形成する
ようその寸法をλ／２の整数倍となるように設定
してある。即ち、凹溝１７ｄの内奥面から開口面
迄の寸法がλ／４、また開口面中央からフランジ
１７と外壁３ｅとの対向面の外端迄の寸法がλ／
４となるようしてある。更にプラズマ生成室１の
フランジ１７と支持リング１８との間の間隙１８
ｂ及びエツチング室３の外壁３ｅに穿つた孔と支
持リング１９との間の間隙１８ｃにわたしてフツ
素樹脂製の短円筒をなす絶縁材９を介在せしめ、
これによつてプラズマ生成室１とエツチング室３
とは絶縁状態に維持されている。 The width of the groove 17d and the dimension from the inner depth to the outer edge between the flange 17 and the outer wall 3e are such that the microwave forms a fundamental standing wave within the groove 17d. It is set to be an integer multiple. That is, the dimension from the inner deep surface of the groove 17d to the opening surface is λ/4, and the dimension from the center of the opening surface to the outer end of the opposing surface between the flange 17 and the outer wall 3e is λ/4.
It is set to be 4. Furthermore, the gap 18 between the flange 17 of the plasma generation chamber 1 and the support ring 18
An insulating material 9 in the form of a short cylinder made of fluororesin is interposed across the gap 18c between the support ring 19 and the hole bored in the outer wall 3e of the etching chamber 3.
As a result, plasma generation chamber 1 and etching chamber 3
It is maintained in an insulated state.
絶縁材９，１６の材質等については特に限定す
るものではなく、従来知られたものを適宜採択す
ればよい。 The materials of the insulating materials 9 and 16 are not particularly limited, and conventionally known materials may be appropriately selected.
而して本考案装置にあつては図示しないロード
ロツク室を通じて、エツチング室３内の載置台６
上に試料Ｓを載置してエツチングを開始する。即
ち、ガス供給系１ｇを通じてプラズマ生成室１内
にC2F6等のエツチングガスを供給し、また励磁
コイル４に電流を通流させると共に、導波管２を
通じてマイクロ波を導入してプラズマを発生さ
せ、プラズマ生成室１に印加されることにより形
成される遮蔽板１ｈと引出電極１ｄ間の電界によ
つてイオンビームを試料に向けて投射させる。こ
のイオンビームにより試料６表面のSiO2等の膜
をエツチングする。 In the case of the device of the present invention, the mounting table 6 in the etching chamber 3 is connected through a load lock chamber (not shown).
A sample S is placed on top and etching is started. That is, an etching gas such as C 2 F 6 is supplied into the plasma generation chamber 1 through the gas supply system 1g, a current is passed through the excitation coil 4, and microwaves are introduced through the waveguide 2 to generate plasma. The ion beam is generated and applied to the plasma generation chamber 1 to project an ion beam toward the sample by an electric field formed between the shielding plate 1h and the extraction electrode 1d. This ion beam etches a film such as SiO 2 on the surface of the sample 6.
プラズマ生成に用いるマイクロ波は導波管２を
通じてプラズマ生成室１内に導入されるが、導波
管２とプラズマ生成室１との連結部及びプラズマ
生成室１とエツチング室３との連結部にはいずれ
も絶縁材１６，９が介在され、しかも相互の接合
面にはマイクロ波の基本定在波を形成せしめる袋
小路状の絶縁領域を形成してあるため、相互の接
合面に沿つて漏洩してきたマイクロ波はこの絶縁
領域内で基本定在波を形成してこれ以上外部への
漏洩は防止されることとなる。 Microwaves used for plasma generation are introduced into the plasma generation chamber 1 through the waveguide 2, and the microwaves are introduced into the plasma generation chamber 1 through the waveguide 2. Both have insulating materials 16 and 9 interposed between them, and a blind alley-like insulating area is formed on the joint surfaces of each other to form a fundamental standing wave of microwaves, so that leakage occurs along the joint surfaces of each other. The microwaves generated form a fundamental standing wave within this insulating region, and further leakage to the outside is prevented.
次に第１図に示した如き本案構造と第４図に示
す如き従来構造との比較試験結果について説明す
る。試験はマイクロ波パワーを200W以上に設定
し、他の条件も同じにしてプラズマを発生させ、
このような状況下で導波管とプラズマ生成室との
結合部（第１図のＡ部分、第４図のA′部分）及
びプラズマ生成室とエツチング室との結合部（第
１図のＢ部分、第４図のB′部分）からの漏洩マ
イクロ波を検出することにより行つた。 Next, the results of a comparative test between the proposed structure as shown in FIG. 1 and the conventional structure as shown in FIG. 4 will be explained. In the test, the microwave power was set to 200W or more, other conditions were kept the same, and plasma was generated.
Under these circumstances, the joint between the waveguide and the plasma generation chamber (section A in Figure 1, section A' in Figure 4) and the joint between the plasma generation chamber and the etching chamber (section B in Figure 1) This was done by detecting leakage microwaves from the section B' in Fig. 4).
その結果、マイクロ波遮断膜のみを用いた従来
構造にあつては、A′，B′部分ともに漏洩マイク
ロ波は70〜80mW／cm2であつたが、本案構造にあ
つてはＡ部分からは1.5mW／cm2以下、またＢ部
分からは0.45mW／cm2以下であつた。 As a result, in the conventional structure using only a microwave blocking film, the microwave leakage from the A' and B' parts was 70 to 80 mW/ cm2 , but in the proposed structure, the microwave leakage from the A part was 70 to 80 mW/cm2. It was 1.5mW/cm 2 or less, and from part B it was 0.45mW/cm 2 or less.
通常電子レンジ等の家庭用電気製品の場合、マ
イクロ波漏洩基準は５cm離れた所で5mW／cm2以
下であることを考慮すれば漏洩マイクロ波を十分
安全なレベルにまで低減し得ていることが解る。 Considering that the microwave leakage standard for household electrical appliances such as microwave ovens is 5mW/cm2 or less at a distance of 5cm, leakage microwaves can be reduced to a sufficiently safe level. I understand.
なお、上述の実施例は本考案をエツチング装置
として適用した構成につき説明したが、何らこれ
に限るものではなく、例えばプラズマCVD装置、
スパツタリング装置等としても適用し得ることは
勿論である。 In addition, although the above-mentioned embodiment explained the configuration in which the present invention is applied as an etching apparatus, it is not limited to this in any way, and can be applied to, for example, a plasma CVD apparatus,
Of course, it can also be applied as a sputtering device or the like.
以上の如く本考案にあつては、プラズマ生成室
と導波管及び／又は試料室との間の対向面に絶縁
材を介在させると共に、接合面の一方に、マイク
ロ波の基本定在波が形成される絶縁領域を形成し
たから比較的簡単な構成により、プラズマ生成室
と導波管、試料室相互の間を電気的絶縁状態とす
ることが出来ると共に、絶縁材を介在させたこと
によつて生じる絶縁材を通じてのマイクロ波の漏
洩も効果的に防止出来、高い安全性が得られるな
ど本考案は優れた効果を奏するものである。
As described above, in the present invention, an insulating material is interposed between the facing surfaces between the plasma generation chamber and the waveguide and/or the sample chamber, and a fundamental standing wave of microwave is provided on one of the joint surfaces. Since the insulating region is formed, the plasma generation chamber, the waveguide, and the sample chamber can be electrically insulated from each other with a relatively simple configuration. The present invention has excellent effects, such as being able to effectively prevent the microwave leakage that occurs through the insulating material and providing a high degree of safety.
第１図は本案構造を適用したプラズマ装置を示
す縦断面図、第２図はプラズマ生成室と導波管と
の連結部の拡大断面図、第３図はプラズマ生成室
とエツチング室との連結部の拡大断面図、第４図
は従来のマイクロ波漏洩防止構造を用いたプラズ
マ装置を示す縦断面図である。
１……プラズマ生成室、２……導波管、３……
エツチング室、４……励磁コイル、９……絶縁
材、１１……支持リング、１２……保持リング、
１３……挿入リング、１６……絶縁材、１８，１
９……支持リング。
Figure 1 is a longitudinal sectional view showing a plasma device to which the proposed structure is applied, Figure 2 is an enlarged sectional view of the connection between the plasma generation chamber and the waveguide, and Figure 3 is the connection between the plasma generation chamber and the etching chamber. FIG. 4 is a longitudinal sectional view showing a plasma device using a conventional microwave leakage prevention structure. 1... Plasma generation chamber, 2... Waveguide, 3...
Etching chamber, 4... Excitation coil, 9... Insulating material, 11... Support ring, 12... Retaining ring,
13...Insertion ring, 16...Insulating material, 18,1
9...Support ring.
Claims (1)
に接続されたプラズマ生成室と、前記プラズマ
生成室に連結された試料室とを備えたプラズマ
装置において、プラズマ生成室と導波管及び／
又は試料室との間の対向面間に絶縁材を介在さ
せると共に、対向面の一方には、マイクロ波の
基本定在波を形成すべく袋小路状をなす絶縁領
域を形成したことを特徴とするマイクロ波漏洩
防止構造。 ２ 前記袋小路状をなす絶縁領域の内奥面から対
向面の内側端迄の平均寸法はλ／２の整数倍で
ある実用新案登録請求の範囲第１項記載のプラ
ズマ装置におけるマイクロ波漏洩防止構造。[Claims for Utility Model Registration] 1. A plasma device comprising a waveguide for transmitting microwaves, a plasma generation chamber connected to the waveguide, and a sample chamber connected to the plasma generation chamber, Plasma generation chamber and waveguide and/or
Alternatively, an insulating material is interposed between the opposing surfaces with the sample chamber, and an insulating region in the shape of a dead end is formed on one of the opposing surfaces to form a fundamental standing wave of microwaves. Microwave leakage prevention structure. 2. The microwave leakage prevention structure in the plasma device according to claim 1, wherein the average dimension from the innermost surface of the dead-end insulating region to the inner end of the opposing surface is an integral multiple of λ/2. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986015251U JPH0513005Y2 (en) | 1986-02-04 | 1986-02-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986015251U JPH0513005Y2 (en) | 1986-02-04 | 1986-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62126831U JPS62126831U (en) | 1987-08-12 |
| JPH0513005Y2 true JPH0513005Y2 (en) | 1993-04-06 |
Family
ID=30806010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986015251U Expired - Lifetime JPH0513005Y2 (en) | 1986-02-04 | 1986-02-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0513005Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131450A (en) * | 1984-11-30 | 1986-06-19 | Canon Inc | Dry etching apparatus |
-
1986
- 1986-02-04 JP JP1986015251U patent/JPH0513005Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131450A (en) * | 1984-11-30 | 1986-06-19 | Canon Inc | Dry etching apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62126831U (en) | 1987-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6051151A (en) | Apparatus and method of producing a negative ion plasma | |
| US6444084B1 (en) | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna | |
| KR100363820B1 (en) | Plasma processor | |
| KR20040042873A (en) | Plasma processing apparatus | |
| JP2011165718A (en) | Gas shower structure and substrate processing apparatus | |
| JPH04279044A (en) | Sample-retention device | |
| JPH0513005Y2 (en) | ||
| JP2001237226A (en) | Plasma treatment equipment | |
| JP3343629B2 (en) | Plasma processing equipment | |
| CN112687510B (en) | Plasma processor and method for preventing arc damage of confinement rings | |
| JPH06120169A (en) | Plasma generating apparatus | |
| JPH05299382A (en) | Method and apparatus for plasma processing | |
| KR101916925B1 (en) | Plasma chamber having hybrid plasma source | |
| KR102467296B1 (en) | Ignition of shielding structure | |
| JP2522661B2 (en) | Microwave ion source | |
| JP2000164392A (en) | Microwave plasma treating device | |
| JPH11238597A (en) | Plasma processing method and device | |
| JPH08203881A (en) | Surface treatment system | |
| JP3077144B2 (en) | Sample holding device | |
| JP4107738B2 (en) | Microwave plasma processing equipment | |
| JP4076645B2 (en) | Microwave plasma processing apparatus and processing method thereof | |
| KR20020051673A (en) | Plasma etching apparatus | |
| JPH06287761A (en) | Microwave plasma treating device | |
| JPS63221622A (en) | Dry-type thin film processing equipment | |
| JPH0878190A (en) | Microwave discharge device and discharge method |