JPH05128442A - Thin-film magnetic head - Google Patents
Thin-film magnetic headInfo
- Publication number
- JPH05128442A JPH05128442A JP31337691A JP31337691A JPH05128442A JP H05128442 A JPH05128442 A JP H05128442A JP 31337691 A JP31337691 A JP 31337691A JP 31337691 A JP31337691 A JP 31337691A JP H05128442 A JPH05128442 A JP H05128442A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic head
- film
- thin
- atomic
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 54
- 239000000126 substance Substances 0.000 abstract description 13
- 229910018557 Si O Inorganic materials 0.000 abstract description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007786 electrostatic charging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229940062173 oxygen 70 % Drugs 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気ディスク装置に用
いる薄膜磁気ヘッドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head used in a magnetic disk device.
【０００２】[0002]
【従来の技術】薄膜磁気ヘッドは、アルミナと炭化チタ
ンセラミックスからなるスライダーとスライダーの一側
面に、フォトリソグラフィー技術と薄膜形成技術を用い
て形成された磁気ヘッドコア部、ギャップ、誘導コイ
ル、絶縁層で構成される。2. Description of the Related Art A thin film magnetic head is composed of a slider made of alumina and titanium carbide ceramics and a magnetic head core portion, a gap, an induction coil and an insulating layer formed on one side surface of the slider by using a photolithography technique and a thin film forming technique. Composed.
【０００３】薄膜磁気ヘッドの磁気ディスク等の磁気記
録媒体と対向する面は、その材質として、上記のアルミ
ナと炭化チタンセラミックス（スライダー部分）とヘッ
ドコアのパーマロイなどの磁性材料やギャップ、絶縁層
のアルミナで構成されているのが一般的である。しかる
に、アルミナと炭化チタンセラミックスは多結晶質であ
るため、研磨しても表面には、凹凸が残り、その凹凸の
ため潤滑性が悪く、摩擦摩耗特性が十分でなかったり、
フライングハイトを０．１μｍより小さくすることは困
難であった。また、ヘッドコアのパーマロイは、水分な
どによる腐食に対して弱く、磁気特性の劣化などの問題
があった。The surface of the thin-film magnetic head facing the magnetic recording medium such as the magnetic disk is made of the above-mentioned alumina, titanium carbide ceramics (slider portion), magnetic material such as permalloy of the head core, gap, and alumina of the insulating layer. It is generally composed of However, since alumina and titanium carbide ceramics are polycrystalline, unevenness remains on the surface even after polishing, and the unevenness results in poor lubricity and insufficient friction and wear characteristics.
It was difficult to make the flying height smaller than 0.1 μm. Further, the permalloy of the head core is vulnerable to corrosion due to moisture and the like, and there is a problem such as deterioration of magnetic characteristics.
【０００４】これらの解決法として、薄膜磁気ヘッドの
磁気記録媒体と対向する面に、潤滑層を付加する方法が
考案されている。この潤滑層の材質としては、ゾル−ゲ
ル法により作製したＳｉＯ2 膜やプラズマ溶射を用いて
作製したＡｌ2 Ｏ3 −ＴｉＯ2 系膜やスパッタリング法
により作製したＡｌ2 Ｏ3 あるいはＳｉＯ2 膜が考案さ
れている。しかし、ゾル−ゲル法やプラズマ溶射により
膜を作製すると、ミクロンオーダーの厚膜しか得られ
ず、潤滑性の改善はみられるが、膜の強度や摩擦による
静電気の帯電などの問題がある。また、スパッタリング
法で作製したＳｉＯ2 膜やＡｌ2 Ｏ3 膜は、内部応力が
高く膜の密着性に問題があり、膜の化学的耐久性につい
てもより強いものが求められていた。As a solution to these problems, a method of adding a lubricating layer to the surface of the thin film magnetic head facing the magnetic recording medium has been devised. Examples of the material of the lubricating layer include a SiO 2 film formed by a sol-gel method, an Al 2 O 3 —TiO 2 based film formed by plasma spraying, and an Al 2 O 3 or SiO 2 film formed by a sputtering method. Invented. However, when a film is formed by the sol-gel method or plasma spraying, only a thick film of micron order is obtained, and although lubricity is improved, there are problems such as film strength and electrostatic charging due to friction. Further, the SiO 2 film and the Al 2 O 3 film produced by the sputtering method have a high internal stress and have a problem with the adhesiveness of the film, and a stronger chemical durability of the film has been demanded.
【０００５】[0005]
【発明が解決しようとする課題】本発明の目的は、従来
技術が有していた前述の欠点を解消しようとするもので
ある。つまり、薄膜磁気ヘッドの磁気記録媒体と対向す
る面に、本発明の薄膜層を用いることにより、ＣＳＳ
（コンタクト・スタート・ストップ）耐久特性や化学的
耐久性を向上することを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art. That is, by using the thin film layer of the present invention on the surface of the thin film magnetic head facing the magnetic recording medium, the CSS
(Contact start / stop) The purpose is to improve durability characteristics and chemical durability.
【０００６】[0006]
【課題を解決するための手段】即ち、本発明は、薄膜磁
気ヘッドにおいて、記録媒体対向面に、特定組成からな
る非晶質酸化膜を形成したことを特徴とする薄膜磁気ヘ
ッドを提供するものであり、具体的には、Ｚｒ−Ｓｉ−
Ｏ系、Ｚｒ−Ｂ−Ｏ系およびＺｒ−Ｓｉ−Ｂ−Ｏ系であ
る。このようにすることで高い摩擦摩耗特性や高い化学
的耐久性をもたらすことができる。なお、ＺｒＯ2 系で
は、スパッタ膜が非晶質になりにくく、膜表面に結晶質
に由来する凹凸が生成し、摩擦摩耗特性が好ましくな
い。また、ＳｉＯ2 系では、化学的耐久性（特に、耐ア
ルカリ性）が低く好ましくない。That is, the present invention provides a thin-film magnetic head, characterized in that, in the thin-film magnetic head, an amorphous oxide film of a specific composition is formed on the recording medium facing surface. And specifically, Zr-Si-
O-based, Zr-B-O based, and Zr-Si-B-O based. By doing so, high friction and wear characteristics and high chemical durability can be provided. In the case of the ZrO 2 system, the sputtered film is unlikely to be amorphous and irregularities due to crystallinity are generated on the film surface, and the friction and wear characteristics are unfavorable. Further, the SiO 2 system is not preferable because it has low chemical durability (particularly alkali resistance).
【０００７】本発明において、非晶質酸化膜のさらに好
ましい態様は次の通りである。まず、全ての系において
共通してＺｒの含有量は２原子％〜２９原子％であり、
この範囲において、非晶質の状態が比較的容易に得ら
れ、高い摩擦摩耗特性や高い化学的耐久性を安定して有
することができる。In the present invention, the more preferable embodiment of the amorphous oxide film is as follows. First, the Zr content is 2 atom% to 29 atom% in common in all systems,
In this range, an amorphous state can be obtained relatively easily, and high friction and wear characteristics and high chemical durability can be stably provided.
【０００８】つぎに、Ｚｒ−Ｓｉ−Ｏ系の膜において、
好ましい態様はＺｒの含有量が２原子％〜２９原子％で
あり、Ｓｉの含有量が５原子％〜３２原子％であり、Ｏ
（酸素）の含有量が６４原子％〜６７原子％である。Next, in the Zr-Si-O-based film,
In a preferred embodiment, the Zr content is 2 atomic% to 29 atomic%, the Si content is 5 atomic% to 32 atomic%, and
The content of (oxygen) is 64 atom% to 67 atom%.
【０００９】つぎに、Ｚｒ−Ｂ−Ｏ系の膜において、好
ましい態様はＺｒの含有量が４原子％〜２９原子％であ
り、Ｂの含有量が６原子％〜３４原子％であり、Ｏ（酸
素）の含有量が５８原子％〜６７原子％である。Next, in a Zr-B-O type film, a preferable embodiment is that the Zr content is 4 atom% to 29 atom% and the B content is 6 atom% to 34 atom%. The content of (oxygen) is 58 atom% to 67 atom%.
【００１０】つぎに、Ｚｒ−Ｓｉ−Ｂ−Ｏ系の膜におい
て、好ましい態様はＺｒの含有量が２原子％〜２９原子
％であり、ＳｉとＢの合計の含有量が５原子％〜３４原
子％であり、Ｏ（酸素）の含有量が５８原子％〜６７原
子％である。Next, in a Zr-Si-B-O-based film, the preferred embodiment is that the Zr content is 2 atomic% to 29 atomic%, and the total content of Si and B is 5 atomic% to 34 atomic%. The content of O (oxygen) is 58 at% to 67 at%.
【００１１】これらの系におけるそれぞれの含有量は、
膜としての摩擦摩耗が小さいなどのＣＳＳ特性に非常に
優れ、これらの特性を発揮するための基板との密着性、
化学的耐久性にも優れた膜を形成しうるもので、含有量
が上記外となるとこれらのいずれかの性能が十分または
一部達成されにくくなる。なお、本発明の非晶質酸化膜
には他の成分が本発明の目的、効果を損なわない範囲に
おいて含まれていても差し支えないが可及的に少量にと
どめることが望ましい。The respective contents of these systems are
It is very excellent in CSS characteristics such as low friction and wear as a film, and adhesion to the substrate to exert these characteristics,
It is possible to form a film having excellent chemical durability, and if the content is outside the above range, it becomes difficult to achieve some or all of these performances. The amorphous oxide film of the present invention may contain other components within a range that does not impair the object and effects of the present invention, but it is desirable to keep the amount as small as possible.
【００１２】つぎに、本発明において好ましい膜厚は、
５０Å〜２００Åである。これは、本発明の膜厚は、薄
くても十分な効果が得られるものであるが、それでも、
５０Å以下になると、均一な薄膜の形成が困難であり、
十分な効果が発揮されないことがあるし、一方、厚い分
には特別な弊害は性能的にはないが、できるだけ磁気媒
体と磁気ヘッドの距離を小さくすることが、記録・再生
特性に対して好ましく、２００Å以内であれば、形成し
た薄膜が非常に薄いので記録・再生特性に対してほとん
ど影響しないなどの点でより好ましいからである。Next, the preferred film thickness in the present invention is
It is 50Å to 200Å. This means that even if the film thickness of the present invention is thin, a sufficient effect can be obtained.
If it is less than 50Å, it is difficult to form a uniform thin film,
In some cases, sufficient effect may not be exerted, and on the other hand, thicker parts do not have special adverse effects on performance, but it is preferable for recording / reproducing characteristics to make the distance between the magnetic medium and the magnetic head as small as possible. , 200 Å or less is more preferable because the formed thin film is very thin and has little influence on the recording / reproducing characteristics.
【００１３】本発明の磁気ヘッドは、これらの非晶質膜
が記録媒体である磁気ディスク等の面に対向しかつ通常
はスタート・ストップ時にはこの面に直接接することに
なるわけであるが、さらにこの面を市販の潤滑液等の潤
滑材を塗布しても差し支えない。In the magnetic head of the present invention, these amorphous films face the surface of the magnetic disk, which is a recording medium, and usually come into direct contact with this surface at the time of start / stop. A lubricant such as a commercially available lubricant may be applied to this surface.
【００１４】本発明の非晶質酸化膜の形成を図１、図２
を参照して説明する。本発明薄膜磁気ヘッドの典型は、
図１、２に示すようにアルミナ・炭化チタンセラミック
ス等からなる基板（スライダー）１の側面に上下磁気ヘ
ッドコア部４、４、それらの間に配したギャップ部６お
よび誘導コイル部３等を形成したものである。The formation of the amorphous oxide film of the present invention is shown in FIGS.
Will be described. The typical thin film magnetic head of the present invention is
As shown in FIGS. 1 and 2, upper and lower magnetic head core portions 4 and 4, a gap portion 6 and an induction coil portion 3 disposed between them are formed on a side surface of a substrate (slider) 1 made of alumina / titanium carbide ceramics or the like. It is a thing.
【００１５】本発明非晶質膜２はこのようなヘッドにお
いて記録媒体と対向する面となるギャップ６端面側に形
成されている。ここで非晶質酸化膜２は、通常は図２の
ように記録媒体と対向し、これと接触する全面に形成し
ておくものであるが、図１のように非接触面など一部に
非形成面があっても良い。なお、図１において、５は端
子部である。The amorphous film 2 of the present invention is formed on the end surface side of the gap 6 which is the surface facing the recording medium in such a head. Here, the amorphous oxide film 2 is usually formed on the entire surface facing and contacting the recording medium as shown in FIG. 2. However, as shown in FIG. There may be a non-formed surface. In addition, in FIG. 1, 5 is a terminal part.
【００１６】本発明において非晶質酸化膜の形成（作
製）は、スパッタリング法により行うことが好ましい
が、ＣＶＤ法、イオンプレーティング法、ゾル−ゲル法
など他の方法でも可能である。なお、スパッタリング法
は、他の方法より緻密で均一な薄膜が得られ易いなどの
点で最適な方法である。In the present invention, the formation (production) of the amorphous oxide film is preferably performed by a sputtering method, but other methods such as a CVD method, an ion plating method and a sol-gel method are also possible. The sputtering method is the most suitable method because it is easier to obtain a dense and uniform thin film than other methods.
【００１７】[0017]
【作用】本発明の非晶質酸化膜は、非晶質つまりガラス
質であるため、表面は非常に滑らかであり、摩擦摩耗が
極めて小さく、ＣＳＳ特性に非常に優れた薄膜磁気ヘッ
ドを提供する。しかも、本発明の非晶質酸化膜は、化学
的耐久性に優れているので、薄膜磁気ヘッドの使用中の
耐久性が高いのは勿論のこと、薄膜磁気ヘッドの作製プ
ロセスにおいて、強力な洗浄液などの薬品に対しても高
い耐久性を持っており、非常にクリーンな薄膜磁気ヘッ
ドを製造できる。また本発明の非晶質酸化膜は、記録媒
体の保護膜として本発明の薄膜磁気ヘッドと合わせて用
いることにより、同一素材同士の摩擦となるので、ＣＳ
Ｓ耐久特性はさらに向上する。Since the amorphous oxide film of the present invention is amorphous, that is, vitreous, its surface is very smooth, friction wear is extremely small, and a thin film magnetic head having excellent CSS characteristics is provided. .. Moreover, since the amorphous oxide film of the present invention has excellent chemical durability, it has high durability during use of the thin-film magnetic head, and also has a strong cleaning liquid in the manufacturing process of the thin-film magnetic head. It has high durability against chemicals such as, and can manufacture a very clean thin film magnetic head. When the amorphous oxide film of the present invention is used as a protective film of a recording medium together with the thin film magnetic head of the present invention, it causes friction between the same materials.
The S durability characteristic is further improved.
【００１８】[0018]
【実施例】表１は、本発明の各種非晶質酸化膜とその性
質を示したものである。それぞれ表にあげた組成の膜
は、所定の配合原料をホットプレス法で作製したターゲ
ットを用いて、アルミナ・炭化チタンセラミックス基板
上に３０％酸素−７０％アルゴン雰囲気で反応性スパッ
タリングによりおよそ１００Åの膜厚に酸化膜を製膜形
成したものである。EXAMPLES Table 1 shows various amorphous oxide films of the present invention and their properties. Each of the films having the compositions shown in the table is about 100 Å by reactive sputtering in a 30% oxygen-70% argon atmosphere on an alumina / titanium carbide ceramic substrate by using a target prepared by hot pressing a predetermined raw material. An oxide film is formed to a film thickness.
【００１９】結晶性は、薄膜Ｘ線回折により観察した。
表１には、結晶性の場合Ｃで、非晶質の場合Ａで示し
た。また、膜の内部応力は、マイクロシートグラスに製
膜して、片持ち梁法で測定した。表中のマイナス符号は
圧縮応力であることを示す。摩擦摩耗性は、砂消しゴム
による摩擦試験の結果で、○は傷がほとんどつかなかっ
たもの、×は容易に傷が生じたものである。耐酸性は、
室温において０．１ＮＨ2 ＳＯ4 中に７２時間浸漬した
結果、○は膜減りが１０％以内のもの、×は膜減りが１
０％以上のものである。耐アルカリ性は、室温において
０．１Ｎ ＮａＯＨ中に７２時間浸漬した結果、○は膜
減りが１０％以内のもの、×は膜減りが１０％以上のも
のである。表１に示す通り、本発明の非晶質酸化膜は摩
擦摩耗特性および化学的耐久性等に良好な結果を得た。Crystallinity was observed by thin film X-ray diffraction.
In Table 1, C is for crystalline and A is for amorphous. The internal stress of the film was measured by the cantilever method after forming the film on a microsheet glass. The minus sign in the table indicates compressive stress. The frictional wear resistance is the result of a friction test using a sand eraser. O indicates that scratches were scarce, and X indicates that scratches occurred easily. Acid resistance is
As a result of soaking in 0.1 NH 2 SO 4 for 72 hours at room temperature, ○ indicates that the film loss is within 10%, and × indicates that the film loss is 1
It is 0% or more. As for alkali resistance, as a result of immersing in 0.1N NaOH for 72 hours at room temperature, ◯ indicates that the film reduction is within 10%, and × indicates that the film reduction is 10% or more. As shown in Table 1, the amorphous oxide film of the present invention provided good results in terms of friction and wear characteristics and chemical durability.
【００２０】[0020]
【表１】 [Table 1]
【００２１】[0021]
【発明の効果】本発明の非晶質酸化膜を薄膜磁気ヘッド
の磁気記録媒体と対向する面に形成することにより、高
いＣＳＳ耐久特性や高い化学的耐久性を有する薄膜磁気
ヘッドを提供できる。By forming the amorphous oxide film of the present invention on the surface of the thin film magnetic head facing the magnetic recording medium, a thin film magnetic head having high CSS durability characteristics and high chemical durability can be provided.
【図１】本発明の薄膜磁気ヘッドの一実施例を説明する
斜視図。FIG. 1 is a perspective view illustrating an embodiment of a thin film magnetic head of the present invention.
【図２】本発明の薄膜磁気ヘッドの一実施例を説明する
側面図。FIG. 2 is a side view illustrating an embodiment of the thin film magnetic head of the invention.
１・・アルミナ・炭化チタンセラミックス基板（スライ
ダー） ２・・非晶質酸化膜 ３・・誘導コイル部 ４・・磁気ヘッドコア部 ５・・端子部 ６・・ギャップ部1 ・ ・ Alumina ・ Titanium carbide ceramics substrate (slider) 2 ・ ・ Amorphous oxide film 3 ・ ・ Induction coil part 4 ・ ・ Magnetic head core part 5 ・ ・ Terminal part 6 ・ ・ Gap part
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成３年１１月８日[Submission date] November 8, 1991
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２０[Correction target item name] 0020
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００２０】[0020]
【表１】 [Table 1]
Claims (8)
なる非晶質酸化膜を形成したことを特徴とする薄膜磁気
ヘッド。1. A thin-film magnetic head comprising an amorphous oxide film of Zr--Si--O system formed on a surface facing a recording medium.
る非晶質酸化膜を形成したことを特徴とする薄膜磁気ヘ
ッド。2. A thin film magnetic head having an amorphous oxide film of Zr--B--O system formed on a surface facing a recording medium.
からなる非晶質酸化膜を形成したことを特徴とする薄膜
磁気ヘッド。3. A thin-film magnetic head having an amorphous oxide film of Zr—Si—B—O system formed on the surface facing a recording medium.
化膜の膜厚が、５０Å〜２００Åであることを特徴とす
る薄膜磁気ヘッド。4. A thin film magnetic head according to claim 1, 2 or 3, wherein the thickness of the amorphous oxide film is 50Å to 200Å.
酸化膜において、Ｚｒの含有量が２原子％〜２９原子％
である薄膜磁気ヘッド。5. The amorphous oxide film according to claim 1, wherein the Zr content is 2 at% to 29 at%.
Is a thin film magnetic head.
膜において、Ｚｒの含有量が２原子％〜２９原子％であ
り、Ｓｉの含有量が５原子％〜３２原子％であり、Ｏの
含有量が６４原子％〜６７原子％である薄膜磁気ヘッ
ド。6. The amorphous oxide film according to claim 1, 4 or 5, wherein the Zr content is 2 atomic% to 29 atomic%, and the Si content is 5 atomic% to 32 atomic%. A thin film magnetic head having an O content of 64 at% to 67 at%.
膜において、Ｚｒの含有量が４原子％〜２９原子％であ
り、Ｂの含有量が６原子％〜３４原子％であり、Ｏの含
有量が５８原子％〜６７原子％である薄膜磁気ヘッド。7. The amorphous oxide film according to claim 2, 4 or 5, wherein the Zr content is 4 atomic% to 29 atomic%, and the B content is 6 atomic% to 34 atomic%. A thin film magnetic head having an O content of 58 atom% to 67 atom%.
膜において、Ｚｒの含有量が２原子％〜２９原子％であ
り、ＳｉとＢの合計の含有量が５％〜３４原子％であ
り、Ｏの含有量が５８原子％〜６７原子％である薄膜磁
気ヘッド。8. The amorphous oxide film according to claim 3, 4 or 5, wherein the Zr content is 2 atomic% to 29 atomic%, and the total content of Si and B is 5% to 34 atomic%. And the O content is 58 atom% to 67 atom%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31337691A JPH05128442A (en) | 1991-11-01 | 1991-11-01 | Thin-film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31337691A JPH05128442A (en) | 1991-11-01 | 1991-11-01 | Thin-film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05128442A true JPH05128442A (en) | 1993-05-25 |
Family
ID=18040527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31337691A Withdrawn JPH05128442A (en) | 1991-11-01 | 1991-11-01 | Thin-film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05128442A (en) |
-
1991
- 1991-11-01 JP JP31337691A patent/JPH05128442A/en not_active Withdrawn
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