JPH05126884A - Electrostatic sensor - Google Patents

Electrostatic sensor

Info

Publication number
JPH05126884A
JPH05126884A JP31745391A JP31745391A JPH05126884A JP H05126884 A JPH05126884 A JP H05126884A JP 31745391 A JP31745391 A JP 31745391A JP 31745391 A JP31745391 A JP 31745391A JP H05126884 A JPH05126884 A JP H05126884A
Authority
JP
Japan
Prior art keywords
circuit
frequency
oscillation
low
resonance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31745391A
Other languages
Japanese (ja)
Inventor
Noboru Masuda
昇 増田
Tetsuo Osawa
哲夫 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP31745391A priority Critical patent/JPH05126884A/en
Publication of JPH05126884A publication Critical patent/JPH05126884A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate background noise due to a high-frequency current which is discharged from an oscillation circuit and vibration noise due to a vibration displacement of a shield wire of a power supply. CONSTITUTION:This electrostatic sensor is constituted of an oscillation circuit 1, a resonance circuit 2, a sensing electrode 3, a detection circuit 4, an amplification circuit 5, and a power-supply circuit 7. An ultra-high-frequency filter 8 is provided between a high-frequency circuit side which consists of the oscillation circuit 1, the resonance circuit 2, and a high-frequency part of a power supply and a low-frequency circuit side which includes the amplification circuit 5 and the low-frequency part of the power supply. thus enabling a high-frequency current which flows from the high-frequency circuit side to the low-frequency circuit side to be interrupted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ATM(Automated Te
llerMachine)、紙幣識別装置、改札装置、製紙産業、
パルプ産業、製版、木工、食品産業、ロボット、情報機
器等の各分野において、被検出体の厚みや性状を検出す
る静電センサ装置に関するものである。
The present invention relates to an ATM (Automated Telecommunications)
llerMachine), bill validator, ticket gate, paper industry,
The present invention relates to an electrostatic sensor device that detects the thickness and properties of an object to be detected in various fields such as pulp industry, plate making, woodworking, food industry, robots, information equipment, and the like.

【0002】[0002]

【従来の技術】出願人は先に微小静電容量の変化を検出
することができる高感度の静電センサ装置を例えば特願
平1-126234号において提案している。
2. Description of the Related Art The applicant has previously proposed, for example, in Japanese Patent Application No. 1-126234, a highly sensitive electrostatic sensor device capable of detecting a change in a minute electrostatic capacitance.

【0003】この提案装置は、図3に示すように、発振
回路1と、共振回路2と、被検出体との静電容量変化を
検出する検出電極3と、検波回路4と、増幅回路5とを
有している。前記発振回路1と共振回路2はそれぞれ別
個独立の誘電体共振器としてのセラミック共振器を含
み、例えば、図4に示すように、発振回路1のGHz帯の
固定発振周波数f1 に対して共振回路2の共振周波数f
0 をわずかにずれた位置に設定しておき、検出電極3に
よって検出される微小静電容量の変化ΔCに対応させて
共振周波数をf0 からΔfだけ偏倚させ、前記静電容量
の変化ΔCを出力電圧ΔVの変化(発振周波数信号を搬
送波とするΔVの変調信号)に変換し、これを検波して
低周波帯域の数mmVの電圧信号とし、これをさらにボル
トのオーダまで増幅して取り出すものである。
As shown in FIG. 3, the proposed device has an oscillation circuit 1, a resonance circuit 2, a detection electrode 3 for detecting a change in electrostatic capacitance between an object to be detected, a detection circuit 4, and an amplification circuit 5. And have. The oscillation circuit 1 and the resonance circuit 2 each include a ceramic resonator as an independent dielectric resonator, and for example, as shown in FIG. 4, the oscillation circuit 1 resonates at a fixed oscillation frequency f 1 in the GHz band. Resonance frequency f of circuit 2
0 is set at a position slightly deviated, and the resonance frequency is deviated from f 0 by Δf in accordance with the change ΔC of the small electrostatic capacitance detected by the detection electrode 3, and the change ΔC of the electrostatic capacitance is changed. Converting to output voltage ΔV change (ΔV modulation signal using oscillation frequency signal as carrier wave), detecting this to make a voltage signal of several mmV in the low frequency band, and further amplifying and extracting it to the order of volts Is.

【0004】この提案装置では、発振回路1の発振周波
数を例えば1〜3GHzという高周波数で発振し、非常に
感度が高いために、例えば、検出電極3の近くに手を近
付けたりすると、検出電極3に対する浮遊分布容量が変
化し、これが共振回路2の共振周波数に影響を与えた
り、あるいは、検出電極3と共振回路2が内蔵するセラ
ミック共振器との導体リードの長さが、発振周波数の波
長をλとしたとき、nλ/4(nは1以上の整数)にな
ると、不安定な現象が生じるという問題がある。このよ
うな問題を解消するために、出願人は提案装置の改良を
重ね、検出電極3をグランド電位となっているシャーシ
と同一面かこれよりもやや引っ込めて配置することによ
り前記浮遊分布容量等の影響を除去することに成功し、
また、検出電極3と共振回路2のセラミック共振器まで
の導体リードをnλ/4よりも短くすることにより前記
不安定化現象を解消することに成功した。その結果とし
て10-4PFの微小静電容量の変化を安定に検出することが
可能になった。
In this proposed device, the oscillation frequency of the oscillation circuit 1 oscillates at a high frequency of, for example, 1 to 3 GHz, and the sensitivity is very high. Therefore, for example, when a hand is brought close to the detection electrode 3, the detection electrode is detected. 3 affects the resonance frequency of the resonance circuit 2, or the length of the conductor lead between the detection electrode 3 and the ceramic resonator incorporated in the resonance circuit 2 is the wavelength of the oscillation frequency. Where n is λ / 4 (n is an integer of 1 or more), an unstable phenomenon occurs. In order to solve such a problem, the applicant repeatedly improved the proposed device, and arranged the detection electrode 3 on the same surface as the chassis at the ground potential or slightly retracted from the chassis, thereby causing the floating distribution capacitance, etc. Succeeded in eliminating the effect of
In addition, the destabilization phenomenon was successfully eliminated by making the conductor lead from the detection electrode 3 to the ceramic resonator of the resonance circuit 2 shorter than nλ / 4. As a result, it became possible to detect the change of the small electrostatic capacitance of 10 -4 PF stably.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、検出感
度をさらに高め、10-5〜10-8PFの微小静電容量の変化を
検出しようとすると、GHz帯で回路駆動を行うときの特
有な不安定現象が生じ、前記改良された静電センサ装置
を用いてもその微小静電容量の変化を安定に検出するこ
とができなくなるという問題に直面した。すなわち、こ
の種の静電センサ装置ではどうしても高周波の回路部分
と、低周波の回路部分とを混在した回路構成とせざるを
得ず、発振回路1からGHz帯の高周波数で発振すると、
この発振周波数信号が放射し、周りの回路導体に雑音と
して高周波電流が流れ、この高周波電流が高周波回路部
分から低周波回路部分に流れると、発振回路1の発振条
件が変動し、微小静電容量検出の分解能が低下するとい
う問題が生じ、また、周りから機械振動を受けると検出
電極や回路周辺の静電容量が変化し、これに起因して振
動によるノイズが発生し、前記10-5〜10-8PFの微小静電
容量の変化を安定に検出することができなくなるという
問題が生じるに至った。
However, if the detection sensitivity is further increased to detect a change in the minute electrostatic capacitance of 10 -5 to 10 -8 PF, a characteristic problem when the circuit is driven in the GHz band is encountered. There has been a problem in that a stable phenomenon occurs, and even if the improved electrostatic sensor device is used, it is impossible to stably detect a change in the minute electrostatic capacitance. That is, in this type of electrostatic sensor device, it is inevitable that the high-frequency circuit portion and the low-frequency circuit portion are mixed, and if the oscillation circuit 1 oscillates at a high frequency in the GHz band,
When this oscillating frequency signal is radiated and a high-frequency current flows as noise in the surrounding circuit conductors, and this high-frequency current flows from the high-frequency circuit portion to the low-frequency circuit portion, the oscillation condition of the oscillation circuit 1 fluctuates, causing a small electrostatic capacitance. caused a problem that the resolution of detection is reduced, also, the capacitance around the sensing electrode and the circuit subjected to mechanical vibrations changes from around the noise due to the vibration is generated due to this, the 10 -5 This has led to the problem that it is no longer possible to stably detect changes in the small electrostatic capacitance of 10 -8 PF.

【0006】本発明は上記課題を解決するためになされ
たものであり、その目的は、発振回路からの高周波の放
射干渉によるノイズ(以下、バックグラウンドノイズと
いう)や機械振動に起因するノイズ(以下、振動ノイズ
という)を大幅に低減してより分解能の高い安定した微
小静電容量の検出を可能にする静電センサ装置を提供す
ることにある。
The present invention has been made in order to solve the above problems, and an object of the present invention is to provide noise (hereinafter referred to as background noise) due to high frequency radiation interference from an oscillation circuit and noise due to mechanical vibration (hereinafter referred to as noise). , Vibration noise) is significantly reduced, and an electrostatic sensor device that enables stable detection of a minute electrostatic capacitance with higher resolution is provided.

【0007】[0007]

【課題を解決するための手段】本発明は上記目的を達成
するために、次のように構成されている。すなわち、本
発明は、誘電体共振器を備え高周波数の発振周波数信号
を出力する発振回路と、誘電体共振器を備え検出部によ
って検出される静電容量の変化を受けて共振周波数を変
化させ、この共振周波数の変化に対応する信号を変調出
力する共振回路と、前記変調出力信号が低周波数帯域の
信号に検波された後、検波出力を増幅して出力する増幅
回路と、電源回路とが共通の回路基板に形成されている
静電センサ装置において、発振回路と共振回路と電源の
高周波部分とを含む高周波回路側と、増幅回路と電源の
低周波部分を含む低周波回路側との間には高周波回路側
から低周波回路側に高周波電流が流れるのを遮断する高
周波分離回路が介設されていることを特徴として構成さ
れている。
In order to achieve the above object, the present invention is configured as follows. That is, the present invention includes an oscillation circuit that includes a dielectric resonator and outputs an oscillation frequency signal of high frequency, and that changes the resonance frequency in response to a change in capacitance detected by a detection unit that includes a dielectric resonator. A resonance circuit that modulates and outputs a signal corresponding to the change in the resonance frequency; an amplification circuit that amplifies and outputs the detection output after the modulation output signal is detected as a signal in a low frequency band; and a power supply circuit. In the electrostatic sensor device formed on the common circuit board, between the high frequency circuit side including the oscillation circuit, the resonance circuit, and the high frequency portion of the power supply, and the low frequency circuit side including the amplification circuit and the low frequency portion of the power supply. Is characterized in that a high-frequency separation circuit for interrupting the flow of high-frequency current from the high-frequency circuit side to the low-frequency circuit side is interposed.

【0008】[0008]

【作用】上記構成の本発明において、発振回路から高周
波信号が放射し、高周波回路側から低周波回路側に高周
波電流が流れようとするが、このとき、高周波分離回路
が高周波回路側から低周波回路側への高周波電流の流れ
を遮断する結果、低周波回路側と高周波回路側の干渉が
防止され、発振回路の発振周波数信号は安定に保たれ
る。
In the present invention having the above structure, a high frequency signal is radiated from the oscillator circuit and a high frequency current tends to flow from the high frequency circuit side to the low frequency circuit side. As a result of blocking the flow of the high frequency current to the circuit side, the interference between the low frequency circuit side and the high frequency circuit side is prevented, and the oscillation frequency signal of the oscillation circuit is kept stable.

【0009】[0009]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1には本発明に係る静電センサ装置の一実施例
の回路構成が示されており、また、図2には同実施例装
置を駆動するときの等価回路が示されている。本実施例
の静電センサ装置は、前記提案装置と同様に、誘電体共
振器(セラミック共振器)を備えてGHz帯(この実施例
では1〜3GHz)の発振周波数信号を出力する発振回路
1と、誘電体共振器としてのセラミック共振器6を備え
た共振回路2と、検波回路4と、増幅回路5と、電源回
路7とを備えている。そして、回路動作も、前記提案装
置と同様に、被検出体の微小静電容量が検出部の検出電
極3によって検出されたときに、その静電容量の変化に
よって共振回路2の共振周波数が変化し、この共振周波
数の変化に対応する信号が発振周波数信号を搬送波とし
て振幅変調信号が作り出され、この振幅変調信号が検波
回路4によって低周波帯域の信号に包絡線検波され、こ
の検波出力が低周波の増幅回路5によって信号増幅され
て所望の信号処理回路に加えられる。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a circuit configuration of one embodiment of the electrostatic sensor device according to the present invention, and FIG. 2 shows an equivalent circuit when driving the device of the same embodiment. The electrostatic sensor device according to the present embodiment includes a dielectric resonator (ceramic resonator) and outputs an oscillation frequency signal in the GHz band (1 to 3 GHz in this embodiment), similarly to the proposed device. A resonance circuit 2 having a ceramic resonator 6 as a dielectric resonator, a detection circuit 4, an amplification circuit 5, and a power supply circuit 7. As for the circuit operation, as in the case of the proposed device, when the small electrostatic capacitance of the detected object is detected by the detection electrode 3 of the detection unit, the resonance frequency of the resonance circuit 2 changes due to the change of the electrostatic capacitance. Then, a signal corresponding to the change in the resonance frequency is generated as an amplitude modulation signal by using the oscillation frequency signal as a carrier, and the amplitude modulation signal is envelope-detected by the detection circuit 4 into a low frequency band signal, and the detection output is low. The signal is amplified by the frequency amplifying circuit 5 and added to the desired signal processing circuit.

【0010】本実施例において特徴的なことは、発振回
路1と共振回路2と電源の高周波部分とを含む高周波回
路側と、増幅回路5と電源の低周波部分を含む低周波回
路側とを高周波分離回路としての超高周波フィルタ8に
よって高周波的に遮断したことである。
A feature of this embodiment is that the high frequency circuit side including the oscillation circuit 1, the resonance circuit 2 and the high frequency portion of the power source, and the low frequency circuit side including the amplifier circuit 5 and the low frequency portion of the power source are provided. That is, the super high frequency filter 8 serving as a high frequency separation circuit cuts off at high frequencies.

【0011】静電センサ装置の回路駆動時には、発振回
路1からGHz帯の高周波の発振信号が放射される結果、
図2の等価回路では、発振回路1はバックグラウンドノ
イズの雑音源として働く。そして、雑音源から放射され
る高周波信号により、周りの電源ラインやグランドライ
ン等、至るところに高周波電流が流れ、高周波回路側に
は回路素子間や配線間にストレーキャパシタンスCS1
〜CS4 が発生し、回路基板上の例えば銅箔等の細いと
ころにはインダクタンスLm1 〜Lm4 の成分が現れ
る。
When the circuit of the electrostatic sensor device is driven, the oscillation circuit 1 radiates a high frequency oscillation signal in the GHz band.
In the equivalent circuit of FIG. 2, the oscillation circuit 1 acts as a noise source of background noise. A high-frequency signal radiated from a noise source causes a high-frequency current to flow everywhere, such as in the surrounding power supply line and ground line, and on the high-frequency circuit side, the stray capacitance CS 1
.About.CS 4 are generated, and components of the inductances Lm 1 to Lm 4 appear on a thin portion such as a copper foil on the circuit board.

【0012】この等価回路で、バックグラウンドノイズ
を低減するためにはバイパスコンデンサCb1 ,Cb2
を設けることが必要となる。この場合、Cb2 の容量を
Cb1 の容量よりも大きくすると、Cb2 側に雑音電流
(高周波電流)Ib2 が流れ、バイパスコンデンサCb
2 間の電位が高くなり、静電センサ装置の雑音電位と電
源供給部のシールド線9との電位が等電位となり、シー
ルド線9に雑音電流が乗り、雑音に対するバックグラウ
ンドノイズは低下するが、シールド線9の振れ等に起因
する振動雑音が新たに発生するという問題が生じる。こ
の振動雑音とバックグラウンド雑音をともに小さくする
ためには、バイパスコンデンサCb1 の容量をCb2
容量よりも遙かに大きくすることが必要になる。しか
し、現状の技術では、大容量の高周波コンデンサを作る
ことは困難であり、一般には、高周波のコンデンサであ
るCb1 の容量よりも低周波のコンデンサであるCb2
の容量の方が大きな容量となり、Cb1 の容量をCb2
の容量よりも遙かに大きくすることは難しい。
In this equivalent circuit, in order to reduce the background noise, the bypass capacitors Cb 1 and Cb 2 are used.
Need to be provided. In this case, if the capacitance of Cb 2 is made larger than the capacitance of Cb 1 , a noise current (high frequency current) Ib 2 flows on the Cb 2 side and the bypass capacitor Cb
The potential between the two becomes high, the noise potential of the electrostatic sensor device and the potential of the shield line 9 of the power supply unit become equal potential, a noise current flows on the shield line 9, and the background noise against noise is reduced, There is a problem that vibration noise is newly generated due to the shake of the shielded wire 9. In order to reduce both the vibration noise and the background noise, it is necessary to make the capacitance of the bypass capacitor Cb 1 much larger than the capacitance of Cb 2 . However, it is difficult to make a large-capacity high-frequency capacitor with the current technology, and in general, Cb 2 which is a capacitor having a lower frequency than that of Cb 1 which is a high-frequency capacitor.
If the capacity of a big capacity, the capacity of Cb 1 Cb 2
It is difficult to make it much larger than the capacity.

【0013】そこで、本発明者はかかる困難を解消する
ために、低周波回路側と高周波回路側との間に高周波的
に負荷抵抗の大きいインダクタンスLを介設し、前記バ
イパスコンデンサCb1 ,Cb2 とによって超高周波フ
ィルタ8を形成している。このように、インダクタンス
Lを設けることにより、高周波回路側に流れる高周波電
流は負荷抵抗の大きいインダクタンスLのところで遮断
され、高周波電流が高周波回路側から低周波回路側に流
れるのを確実に遮断する。この高周波電流の遮断によ
り、シールド線9に高周波電流が流れることもなくな
り、したがって、シールド線9が振動変位しても振動ノ
イズを発生させることがなくなり、発振回路1の発振動
作を安定に行うことが可能となるのである。
Therefore, in order to solve such a difficulty, the present inventor installs an inductance L having a large load resistance in the high frequency between the low frequency circuit side and the high frequency circuit side, and the bypass capacitors Cb 1 and Cb. The ultra high frequency filter 8 is formed by 2 and. By thus providing the inductance L, the high frequency current flowing to the high frequency circuit side is blocked at the inductance L having a large load resistance, and the high frequency current is surely blocked from flowing from the high frequency circuit side to the low frequency circuit side. By cutting off the high-frequency current, the high-frequency current does not flow through the shielded wire 9, so that vibrational noise is not generated even when the shielded wire 9 is displaced by vibration, and the oscillation operation of the oscillation circuit 1 is stably performed. Is possible.

【0014】この実施例では図1に示すように、高周波
分離回路としての超高周波フィルタ8をインダクタンス
Lと電解コンデンサ11とコンデンサ12とによって構成
し、電源と超高周波フィルタ8とを3端子レギュレータ
10を用いて接続し、高周波回路側のグランドラインGN
1 と低周波回路側のグランドラインGN2 との間に高周
波的に負荷抵抗の大きいインダクタンスLを介設し、さ
らに、高周波回路側の電源ラインVcc1 と低周波回路側
の電源ラインVcc2 との間に同様に高周波的に負荷抵抗
の大きいインダクタンスLを介設している。なお、図1
の回路図で、グランドラインGNは回路仕様に応じ、高
周波回路側のグランドラインGN1 あるいは低周波回路
側のグランドラインGN2 のいずれかに接続されるもの
である。
In this embodiment, as shown in FIG. 1, an ultra high frequency filter 8 as a high frequency separation circuit is composed of an inductance L, an electrolytic capacitor 11 and a capacitor 12, and a power supply and an ultra high frequency filter 8 are a three-terminal regulator.
Connect using 10 and ground line GN on the high frequency circuit side
1 and a ground line GN 2 on the low frequency circuit side are provided with an inductance L having a large load resistance in terms of high frequency, and further, a power source line Vcc 1 on the high frequency circuit side and a power source line Vcc 2 on the low frequency circuit side. Similarly, an inductance L having a large load resistance at high frequency is interposed between the two. Note that FIG.
In the circuit diagram, the ground line GN is connected to either the ground line GN 1 on the high frequency circuit side or the ground line GN 2 on the low frequency circuit side, depending on the circuit specifications.

【0015】この実施例によれば、発振回路1から放射
される高周波信号によって高周波電流がバックグラウン
ドノイズとして高周波回路側に流れたとしても、この高
周波電流は負荷抵抗の大きいインダクタンスLによって
遮られて低周波回路側に流れることがなく、高周波回路
側のループに沿って流れるので、高周波回路側と低周波
回路側とで干渉を起こすことがなくなり、これにより、
発振周波数の安定化が図れるとともに、シールド線9の
振動等に起因する振動ノイズの発生もなく、10-5〜10-8
PFという極めて微小な静電容量の変化を高分解のもとで
安定に検出することが可能となった。
According to this embodiment, even if a high frequency signal radiated from the oscillation circuit 1 causes a high frequency current to flow to the high frequency circuit side as background noise, the high frequency current is blocked by the inductance L having a large load resistance. Since it does not flow to the low frequency circuit side and flows along the loop on the high frequency circuit side, interference does not occur between the high frequency circuit side and the low frequency circuit side, and thus,
The oscillation frequency can be stabilized, and vibration noise caused by the vibration of the shielded wire 9 does not occur and 10 -5 to 10 -8
It has become possible to stably detect an extremely small change in capacitance called PF under high resolution.

【0016】なお、本発明は上記実施例に限定されるこ
とはなく、様々な実施の態様を採り得るものである。
The present invention is not limited to the above-mentioned embodiment, and various embodiments can be adopted.

【0017】[0017]

【発明の効果】本発明は、静電センサ装置の高周波回路
側と低周波回路側との間には高周波回路側から低周波回
路側に高周波電流が流れるのを遮断する高周波分離回路
を設けたものであるから、高周波電流が高周波回路側か
ら低周波回路側に流れて高周波回路側と低周波回路側と
の干渉を起こすことがなくなり、これにより、発振回路
から放射されるバックグラウンドノイズや電源のシール
ド線の振動等による振動ノイズのほとんどない静電セン
サ装置の提供が可能となる。このように、雑音を除去す
ることができるので、分解能も飛躍的に改善され、前記
提案装置に較べ10倍以上の安定化が可能となり、これに
伴い検出能も飛躍的に改善され、10-5〜10-8という微小
静電容量の変化を安定に検出することが可能になる。
According to the present invention, a high-frequency separation circuit is provided between the high-frequency circuit side and the low-frequency circuit side of the electrostatic sensor device to block a high-frequency current from flowing from the high-frequency circuit side to the low-frequency circuit side. Therefore, the high-frequency current does not flow from the high-frequency circuit side to the low-frequency circuit side to cause interference between the high-frequency circuit side and the low-frequency circuit side. It is possible to provide an electrostatic sensor device having almost no vibration noise due to vibration of the shielded wire. This way, it is possible to remove noise, resolution is also remarkably improved, the proposed device enables 10 times more stabilized compared to, detectability With this also dramatically improved, 10 - It is possible to stably detect a change in minute electrostatic capacitance of 5 to 10 -8 .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る静電センサ装置の一実施例を示す
回路図である。
FIG. 1 is a circuit diagram showing an embodiment of an electrostatic sensor device according to the present invention.

【図2】同実施例装置の回路動作の等価回路図である。FIG. 2 is an equivalent circuit diagram of a circuit operation of the device of the embodiment.

【図3】出願人が先に提案した静電センサ装置のブロッ
ク図である。
FIG. 3 is a block diagram of an electrostatic sensor device previously proposed by the applicant.

【図4】提案装置および本実施例装置の微小静電容量の
検出動作の説明図である。
FIG. 4 is an explanatory diagram of a detection operation of a small capacitance of the proposed apparatus and the apparatus of this embodiment.

【符号の説明】[Explanation of symbols]

1 発振回路 2 共振回路 3 検出電極 4 検波回路 5 増幅回路 8 超高周波フィルタ 10 3端子レギュレータ L インダクタンス 1 Oscillation Circuit 2 Resonance Circuit 3 Detection Electrode 4 Detection Circuit 5 Amplification Circuit 8 Ultra High Frequency Filter 10 3 Terminal Regulator L Inductance

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 誘電体共振器を備え高周波数の発振周波
数信号を出力する発振回路と、誘電体共振器を備え検出
部によって検出される静電容量の変化を受けて共振周波
数を変化させ、この共振周波数の変化に対応する信号を
変調出力する共振回路と、前記変調出力信号が低周波数
帯域の信号に検波された後、検波出力を増幅して出力す
る増幅回路と、電源回路とが共通の回路基板に形成され
ている静電センサ装置において、発振回路と共振回路と
電源の高周波部分とを含む高周波回路側と、増幅回路と
電源の低周波部分を含む低周波回路側との間には高周波
回路側から低周波回路側に高周波電流が流れるのを遮断
する高周波分離回路が介設されていることを特徴とする
静電センサ装置。
1. An oscillation circuit that includes a dielectric resonator and outputs an oscillation frequency signal of high frequency; and a resonance frequency that changes the capacitance in response to a change in capacitance detected by a detection unit that includes the dielectric resonator, The resonance circuit that modulates and outputs a signal corresponding to the change in the resonance frequency, the amplification circuit that amplifies the detection output after the modulation output signal is detected as a low frequency band signal, and the power supply circuit are common. In the electrostatic sensor device formed on the circuit board of, between the high frequency circuit side including the oscillation circuit, the resonance circuit, and the high frequency portion of the power supply, and the low frequency circuit side including the amplification circuit and the low frequency portion of the power supply. Is an electrostatic sensor device in which a high-frequency separation circuit that blocks a high-frequency current from flowing from the high-frequency circuit side to the low-frequency circuit side is provided.
JP31745391A 1991-11-05 1991-11-05 Electrostatic sensor Pending JPH05126884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31745391A JPH05126884A (en) 1991-11-05 1991-11-05 Electrostatic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31745391A JPH05126884A (en) 1991-11-05 1991-11-05 Electrostatic sensor

Publications (1)

Publication Number Publication Date
JPH05126884A true JPH05126884A (en) 1993-05-21

Family

ID=18088397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31745391A Pending JPH05126884A (en) 1991-11-05 1991-11-05 Electrostatic sensor

Country Status (1)

Country Link
JP (1) JPH05126884A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009079897A (en) * 2007-09-25 2009-04-16 Toshiba Corp Sensor device and display device
JP2015001435A (en) * 2013-06-14 2015-01-05 ローム株式会社 Electric circuit evaluation method and electric circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009079897A (en) * 2007-09-25 2009-04-16 Toshiba Corp Sensor device and display device
JP2015001435A (en) * 2013-06-14 2015-01-05 ローム株式会社 Electric circuit evaluation method and electric circuit

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