JPH05121697A - Manufacture of semiconductor storage device - Google Patents
Manufacture of semiconductor storage deviceInfo
- Publication number
- JPH05121697A JPH05121697A JP3279951A JP27995191A JPH05121697A JP H05121697 A JPH05121697 A JP H05121697A JP 3279951 A JP3279951 A JP 3279951A JP 27995191 A JP27995191 A JP 27995191A JP H05121697 A JPH05121697 A JP H05121697A
- Authority
- JP
- Japan
- Prior art keywords
- mask rom
- protective film
- film layer
- wiring layer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000003870 refractory metal Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001994 activation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体記憶装置の製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor memory device.
【０００２】[0002]
【従来の技術】従来の半導体記憶装置の製造方法は、図
２（ａ）〜（ｄ）に示す方法により行っていた。図２
（ａ）は、基板１上に所望の形状に形成されたフォトレ
ジスト７をマスクに不純物を注入し記憶素子への情報の
有無を記録するための不純物層８を形成したものであ
る。図２（ｂ）は、図２（ａ）上にゲート電極２を形成
したものである。図２（ｃ）は、図２（ｂ）に拡散配線
層３を形成したものである。図２（ｄ）は、図２（ｃ）
上に絶縁膜層４、金属配線層５及び保護膜層６を形成し
たものである。2. Description of the Related Art A conventional method of manufacturing a semiconductor memory device has been performed by the method shown in FIGS. Figure 2
In FIG. 1A, an impurity layer 8 for recording the presence or absence of information in a memory element is formed by implanting impurities using a photoresist 7 formed in a desired shape as a mask on the substrate 1. FIG. 2B shows the gate electrode 2 formed on the structure of FIG. FIG. 2C shows the diffusion wiring layer 3 formed in FIG. 2B. 2 (d) is shown in FIG. 2 (c).
The insulating film layer 4, the metal wiring layer 5, and the protective film layer 6 are formed on the top.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来のような
半導体記憶装置の製造方法では顧客より記録情報データ
を入手後、半導体記憶装置の完成までの期間が長くなる
という課題を有していた。However, the conventional method of manufacturing a semiconductor memory device has a problem that it takes a long time to complete the semiconductor memory device after obtaining the record information data from the customer.
【０００４】[0004]
【課題を解決するための手段】上記の課題を解決するた
めに、この発明においては、金属配線層を高融点金属に
変更することにより、記憶素子への情報の有無を記録す
るための不純物注入工程を保護膜形成後に行えるように
なった。In order to solve the above problems, according to the present invention, a metal wiring layer is changed to a refractory metal so that an impurity is injected to record the presence or absence of information in a memory element. The process can be performed after forming the protective film.
【０００５】[0005]
【作用】上記のような方法により、半導体記憶装置の記
憶素子への情報の有無を記録する不純物注入工程を従来
のゲート配線形成前より保護膜形成後に変更することが
できる。According to the method as described above, the impurity injection step for recording the presence / absence of information in the memory element of the semiconductor memory device can be changed after the protective film is formed, before the conventional gate wiring is formed.
【０００６】[0006]
【実施例】以下にこの発明の実施例を図に基づき説明す
る。図１（ａ）〜（ｄ）は、この発明の半導体記憶装置
の製造方法を示す工程順断面図である。図１（ａ）は、
基板１上にゲート電極２を形成したものである。この時
点ではまだ、情報の有無は記録されていない。図１
（ｂ）は、図１（ａ）に拡散配線層３を形成したもので
ある。図１（ｃ）は、図１（ｂ）上に絶縁膜層４、金属
配線層５及び保護膜層６を形成したものである。この発
明では、金属配線層５に、融点９００℃以上の導電性材
料（例えば、シリサイド ポリサイド 高融点金属単
独）又は起電導物質等で形成する。図１（ｄ）は、図１
（ｃ）上に所望の形状に形成されたフォトレジスト７を
マスクに不純物を注入し、記憶素子への情報の有無を記
録するための不純物層８を形成したものである。この不
純物注入は、高電圧イオン注入装置を使用すれば容易に
行えるものであり、技術的には何ら問題はない。又、従
来の半導体記憶素子では、金属配線層５にアルミニウム
を使用しているため、この発明と同様な工程順にて不純
物注入を行っても不純物の活性化処理がアルミニウム融
点以下では行えないため、金属配線形成以後に不純物注
入工程を変更することは不可能である。この発明によ
り、通常顧客より記録情報データを入手後半導体記憶装
置の完成まで２〜８マスクの工程が必要であったもの
が、１マスクのみの工程で完成し大幅に納期の短縮が行
われる。Embodiments of the present invention will be described below with reference to the drawings. 1A to 1D are cross-sectional views in order of the steps, showing a method for manufacturing a semiconductor memory device of the present invention. Figure 1 (a)
The gate electrode 2 is formed on the substrate 1. The presence or absence of information has not yet been recorded at this point. Figure 1
FIG. 1B shows the diffusion wiring layer 3 formed in FIG. FIG. 1C shows an insulating film layer 4, a metal wiring layer 5, and a protective film layer 6 formed on the structure shown in FIG. In the present invention, the metal wiring layer 5 is formed of a conductive material having a melting point of 900 ° C. or higher (for example, silicide polycide refractory metal alone) or an electroconductive material. FIG. 1D is the same as FIG.
(C) Impurities are implanted using a photoresist 7 formed in a desired shape as a mask, and an impurity layer 8 for recording the presence / absence of information in a memory element is formed thereon. This impurity implantation can be easily performed by using a high-voltage ion implantation device, and there is no technical problem. Further, in the conventional semiconductor memory element, since aluminum is used for the metal wiring layer 5, the impurity activation process cannot be performed below the aluminum melting point even if the impurity implantation is performed in the same process order as in the present invention. It is impossible to change the impurity implantation process after forming the metal wiring. According to the present invention, although the process of 2 to 8 masks is normally required until the semiconductor memory device is completed after the record information data is obtained from the customer, the process is completed with only one mask, and the delivery time is greatly shortened.
【０００７】[0007]
【発明の効果】この発明は、以上説明したように記憶素
子への情報を記録する為の不純物注入工程を、ゲート電
極形成前から、保護膜形成後に変更することにより短納
期で半導体記憶装置の供給を行うことができるようにな
る。As described above, according to the present invention, the impurity injection process for recording information in the memory element is changed from before the gate electrode is formed to after the protective film is formed, so that the semiconductor memory device can be delivered in a short time. You will be able to supply.
【図１】（ａ）〜（ｄ）は本発明の半導体記憶装置の製
造方法を示す工程順断面図である。1A to 1D are cross-sectional views in order of the steps, showing a method for manufacturing a semiconductor memory device of the present invention.
【図２】（ａ）〜（ｄ）は従来の半導体記憶装置の製造
方法を示す工程順断面図である。2A to 2D are cross-sectional views in order of the steps, showing a conventional method for manufacturing a semiconductor memory device.
１ 基板 ２ ゲート電極 ３ 拡散配線層 ４ 絶縁膜層 ５ 金属配線層 ６ 保護膜層 ７ フォトレジスト ８ 不純物層 1 substrate 2 gate electrode 3 diffusion wiring layer 4 insulating film layer 5 metal wiring layer 6 protective film layer 7 photoresist 8 impurity layer
Claims (1)
と、前記金属配線層上に所望の形状に窓あけされた保護
膜層を形成する工程と、前記保護膜層上に記録する情報
にしたがって加工されたフォトレジストを形成する工程
と、前記フォトレジストをマスクとして情報を記録する
ための不純物注入を行う工程とからなる半導体記憶装置
の製造方法。1. A step of forming a metal wiring layer with a refractory metal, a step of forming a protective film layer having a window formed in a desired shape on the metal wiring layer, and information recorded on the protective film layer. A method of manufacturing a semiconductor memory device, comprising: a step of forming a photoresist processed according to the above method; and a step of implanting impurities for recording information using the photoresist as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3279951A JPH05121697A (en) | 1991-10-25 | 1991-10-25 | Manufacture of semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3279951A JPH05121697A (en) | 1991-10-25 | 1991-10-25 | Manufacture of semiconductor storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05121697A true JPH05121697A (en) | 1993-05-18 |
Family
ID=17618202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3279951A Pending JPH05121697A (en) | 1991-10-25 | 1991-10-25 | Manufacture of semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05121697A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5665995A (en) * | 1993-10-22 | 1997-09-09 | United Microelectronics Corporation | Post passivation programmed mask ROM |
| US5744394A (en) * | 1996-08-26 | 1998-04-28 | Sharp Kabushiki Kaisha | Method for fabricating a semiconductor device having copper layer |
-
1991
- 1991-10-25 JP JP3279951A patent/JPH05121697A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5665995A (en) * | 1993-10-22 | 1997-09-09 | United Microelectronics Corporation | Post passivation programmed mask ROM |
| US5744394A (en) * | 1996-08-26 | 1998-04-28 | Sharp Kabushiki Kaisha | Method for fabricating a semiconductor device having copper layer |
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