JPH05121298A - Mask for x-ray exposure and manufacture thereof - Google Patents

Mask for x-ray exposure and manufacture thereof

Info

Publication number
JPH05121298A
JPH05121298A JP28929991A JP28929991A JPH05121298A JP H05121298 A JPH05121298 A JP H05121298A JP 28929991 A JP28929991 A JP 28929991A JP 28929991 A JP28929991 A JP 28929991A JP H05121298 A JPH05121298 A JP H05121298A
Authority
JP
Japan
Prior art keywords
ray
resist
absorber
mask
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28929991A
Other languages
Japanese (ja)
Other versions
JP3114286B2 (en
Inventor
Tsutomu Ikeda
勉 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP28929991A priority Critical patent/JP3114286B2/en
Publication of JPH05121298A publication Critical patent/JPH05121298A/en
Application granted granted Critical
Publication of JP3114286B2 publication Critical patent/JP3114286B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To reduce an adverse effect of a strain, generation of heat or the like due to internal stresses of an X-ray absorbers and to enable execution of exposure transfer of high resolution by providing the X-ray absorbers on the opposite sides of an X-ray transmitting film so that the opposite line widths thereof are different from each other and by making the X-ray transmitting film be held by a supporting frame. CONSTITUTION:X-ray absorbers 2 are provided on the opposite sides of an X-ray transmitting film 1 so that they are opposite to each other. On the occasion, the line width of the X-ray absorber 2 on one side is made different from that on the other side. The X-ray transmitting film 1 is made to be held by a supporting frame 3. Thereby a surface area is increased so that a heat is released efficiently, and at the same time, the heat is released on the opposite sides of the X-ray transmitting film so that it is reduced. Thereby a mask for X-ray exposure which is free from a positional strain of the X-ray absorber and a Fresnel diffraction due to exposure, of which a defect density is low and which enables execution of exposure transfer of very high practicability, and a manufacturing method thereof, can be attained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はX線露光用マスク及びそ
れの製造方法に関し、例えば波長2Å〜150Å程度の
X線を用いてマスク面上の電子回路パターンをウエハ面
上に転写し、IC,LSI等の半導体素子を製造する所
謂X線リソグラフィーにおいて高精度な露光転写が可能
なX線露光用マスク及びそれの製造方法に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask for X-ray exposure and a method for manufacturing the same, and, for example, an X-ray having a wavelength of about 2Å to 150Å is used to transfer an electronic circuit pattern on the mask surface onto a wafer surface to form an IC. The present invention relates to an X-ray exposure mask capable of highly accurate exposure transfer in so-called X-ray lithography for manufacturing semiconductor elements such as LSIs, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】最近IC,LSI等の半導体素子製造用
の露光装置においては、半導体素子の高集積化に伴って
より高分解能の焼付けが可能なX線を利用した露光装置
が種々と提案されている。
2. Description of the Related Art Recently, as an exposure apparatus for manufacturing semiconductor elements such as ICs and LSIs, there have been proposed various exposure apparatuses using X-rays capable of printing with higher resolution as semiconductor elements become highly integrated. ing.

【0003】このX線を利用した露光装置で使用される
X線露光用マスクの材料及び構成に関する研究は数多く
発表されている。
Many studies have been made on the material and structure of an X-ray exposure mask used in an exposure apparatus using this X-ray.

【0004】図4は従来の一般的なX線露光用マスクの
要部断面図である。
FIG. 4 is a sectional view of a main part of a conventional general X-ray exposure mask.

【0005】図中21はX線透過膜の支持枠でありシリ
コンより成っている。22はX線透過膜、23はX線吸
収体でありX線透過膜22面に設けている。X線透過膜
22の材料としてはシリコン(Si),窒化シリコン
(SiN),炭化シリコン(SiC)等が、X線吸収体
23の材料としては金(Au),タンタル(Ta),タ
ングステン(W)等が用いられる。
In the figure, reference numeral 21 denotes a support frame for the X-ray transparent film, which is made of silicon. Reference numeral 22 is an X-ray transmission film, and 23 is an X-ray absorber provided on the X-ray transmission film 22 surface. The material of the X-ray transparent film 22 is silicon (Si), silicon nitride (SiN), silicon carbide (SiC), and the like, and the material of the X-ray absorber 23 is gold (Au), tantalum (Ta), tungsten (W). ) Etc. are used.

【0006】一方、X線リソグラフィーを半導体素子の
量産に適用するには、X線露光用マスクの量産が重要に
なってくる。しかしながらX線露光用マスクの量産はこ
れまで技術的に大変困難であった。それはレジストパタ
ーン露光を通常、電子線描画で行うため多大な時間がか
かるためである。
On the other hand, in order to apply X-ray lithography to mass production of semiconductor devices, mass production of X-ray exposure masks becomes important. However, the mass production of X-ray exposure masks has been technically very difficult until now. This is because exposure of the resist pattern is usually performed by electron beam drawing, which takes a lot of time.

【0007】一方、半導体素子の量産生産では同一デバ
イスのラインを複数持ち、しかも1ラインで露光用マス
クを複数組必要とする。従って同一パターンの露光マス
クが多数枚必要となる。これらをひとつひとつ電子線描
画装置で描画していては時間がかかりすぎ、又コストの
点で不利となる。
On the other hand, in mass production of semiconductor elements, a plurality of lines of the same device are provided, and a plurality of exposure masks are required for one line. Therefore, a large number of exposure masks having the same pattern are required. It takes too much time to draw each of these with an electron beam drawing apparatus, and it is disadvantageous in terms of cost.

【0008】そこで従来はX線露光用マスターマスクは
電子線描画装置で作り、ワーキングマスクはマスターマ
スクを用いたX線露光によって製造しようという方法が
例えば特開昭58−194338号公報や特開昭58−
194339号公報等で提案されている。これらは、ワ
ーキングマスクの製造工程におけるレジストへのパター
ン露光工程にマスターマスクによるX線露光を使用する
というものである。
Therefore, conventionally, there is a method in which a master mask for X-ray exposure is produced by an electron beam drawing apparatus and a working mask is produced by X-ray exposure using the master mask, for example, in Japanese Patent Laid-Open Nos. 58-194338 and Sho-194338. 58-
It is proposed in Japanese Patent Publication No. 194339. In these methods, X-ray exposure using a master mask is used in a pattern exposure process for a resist in a working mask manufacturing process.

【0009】図5に従来のX線吸収体としてAuメッキ
膜を用いた場合のX線露光用マスクの作成方法の一例の
概略図を示す。
FIG. 5 is a schematic view showing an example of a conventional method for producing an X-ray exposure mask when an Au plating film is used as the X-ray absorber.

【0010】同図においてはまず1〜5mm厚のSi基
板31上にCVD法によりX線透過膜32を1〜3μm
厚形成する(図5(A))。次いで裏面を水酸化カリウ
ム水溶液等によってエッチングを行い、窓開けを行う
(図5(B))。X線透過膜32面上にメッキ用電極3
3を形成した後レジストパターン34を形成する(図5
(C))。X線透過膜32面上にAuメッキを0.7〜
1.0μm行い、これによりX線吸収体35を形成する
(図5(D))。レジストパターン34及びメッキ電極
33を剥離し、これによりX線露光用マスクが完成され
る(図5(E))。
In FIG. 1, first, an X-ray transparent film 32 is deposited on the Si substrate 31 having a thickness of 1 to 5 mm by the CVD method to a thickness of 1 to 3 μm.
It is thickly formed (FIG. 5A). Then, the back surface is etched with an aqueous solution of potassium hydroxide or the like to open a window (FIG. 5B). Electrode 3 for plating on the surface of X-ray transparent film 32
3 is formed, a resist pattern 34 is formed (see FIG. 5).
(C)). Au plating on the X-ray transparent film 32 surface is 0.7 to
1.0 μm is performed, whereby the X-ray absorber 35 is formed (FIG. 5D). The resist pattern 34 and the plating electrode 33 are peeled off, thereby completing the X-ray exposure mask (FIG. 5 (E)).

【0011】[0011]

【発明が解決しようとする課題】図4に示す構成のX線
露光用マスクでは、X線吸収体23の内部応力によるX
線吸収体23の位置ずれ、パターンの欠陥及びX線露光
時のフレネル回折によるパターン像のボケ、X線照射に
よるX線吸収体の発熱等の問題点があった。
In the X-ray exposure mask having the structure shown in FIG. 4, X due to the internal stress of the X-ray absorber 23 is used.
There are problems such as displacement of the line absorber 23, pattern defects, pattern image blurring due to Fresnel diffraction during X-ray exposure, and heat generation of the X-ray absorber due to X-ray irradiation.

【0012】X線露光時のフレネル回折によるボケはマ
スクとレジストの間にギャップがあるためにその間でフ
レネル回折により像がボケてしまう現象である。X線照
射によるX線吸収体の発熱とは、X線照射によって吸収
体がX線を吸収して発熱し、この発熱によって吸収体が
位置ひずみを起こす現象である。
Blurring due to Fresnel diffraction at the time of X-ray exposure is a phenomenon in which an image is blurred due to Fresnel diffraction between the mask and the resist because there is a gap between them. The heat generation of the X-ray absorber due to X-ray irradiation is a phenomenon in which the absorber absorbs X-rays and generates heat due to X-ray irradiation, and this heat generation causes positional distortion of the absorber.

【0013】一方、従来のX線露光用マスク、特にX線
露光用ワーキングマスクの製造方法では前述の如くX線
吸収体の内部応力による吸収体の位置ずれ、パターンの
欠陥等の問題点を有していた。X線吸収体の内部応力の
制御は非常に困難であり、これによって引き起こされる
X線吸収体の位置ずれによって歩留りは非常に低いもの
となっていた。
On the other hand, in the conventional method for manufacturing an X-ray exposure mask, especially a working mask for X-ray exposure, there are problems such as the displacement of the absorber due to the internal stress of the X-ray absorber and the defect of the pattern as described above. Was. It is very difficult to control the internal stress of the X-ray absorber, and the yield of the X-ray absorber is extremely low due to the displacement of the X-ray absorber caused by this.

【0014】又、パターンの欠陥は白欠陥と黒欠陥とが
あるが、黒欠陥の修正は集束イオンビームエッチング法
等により比較的容易にできるが、白欠陥の修正は非常に
難しく、高コスト化、歩留り低下をきたしていた。
There are white defects and black defects as pattern defects. The black defects can be relatively easily repaired by a focused ion beam etching method or the like, but the white defects are very difficult to repair and the cost is increased. , The yield was declining.

【0015】これらの問題点を解決するために従来より
種々な提案がなされている。X線吸収体の内部応力によ
る吸収体の位置ずれ、パターンの白欠陥に対してはX線
透過膜の両面に同一形状の吸収体を形成することによっ
て解決する方法が特開昭59−116749号公報で提
案されている。ここでは表裏のX線吸収体によって内部
応力を相殺させると同時に、パターン欠陥の発生がラン
ダムであり同一場所に起こらないだろうことを利用して
欠陥密度を低減させることにより解決している。
Various proposals have hitherto been made to solve these problems. JP-A-59-116749 discloses a method for solving the positional deviation of the absorber due to the internal stress of the X-ray absorber and the white defect of the pattern by forming the absorber of the same shape on both surfaces of the X-ray transparent film. Proposed in the gazette. Here, the internal stress is canceled by the X-ray absorbers on the front and back sides, and at the same time, the defect density is reduced by utilizing the fact that the pattern defects are random and will not occur at the same place.

【0016】しかしながらこの方法では、X線露光時の
フレネル回折を抑えられなかった。又、X線露光時のフ
レネル回折はX線吸収体とレジスト層との間にギャップ
が存在するために発生し、これによりX線がボケ、解像
度が低下する。この問題点をX線吸収体の形状を制御し
てX線の位相を変えてフレネル回折の影響を低減させて
解決する方法が、特開平2−52416号公報で提案さ
れている。しかしながら従来のワーキングマスクの製造
方法ではX線吸収体の形状制御は困難であった。
However, this method cannot suppress Fresnel diffraction during X-ray exposure. Fresnel diffraction during X-ray exposure occurs due to the existence of a gap between the X-ray absorber and the resist layer, which causes blurring of X-rays and deterioration of resolution. JP-A-2-52416 proposes a method of solving this problem by controlling the shape of the X-ray absorber to change the phase of X-rays and reduce the influence of Fresnel diffraction. However, it has been difficult to control the shape of the X-ray absorber by the conventional working mask manufacturing method.

【0017】一方、X線露光用マスクはX線照射によっ
てX線を吸収する。特にX線吸収体は照射されたX線の
ほとんどを吸収するために発熱する。この発熱により吸
収体は膨張して位置ひずみを発生させる。この問題点を
X線吸収体をX線多層膜にしてX線を反射させ解決する
方法が特開平2−165615号公報で提案されてい
る。しかしながらこの方法は、垂直入射のX線の反射率
が非常に低い為その効果が低かった。
On the other hand, the X-ray exposure mask absorbs X-rays by X-ray irradiation. In particular, the X-ray absorber absorbs most of the irradiated X-rays and therefore generates heat. This heat causes the absorber to expand and generate positional distortion. JP-A-2-165615 proposes a method of solving this problem by using an X-ray absorber as an X-ray multilayer film to reflect X-rays. However, this method has a low effect because the reflectance of X-rays at normal incidence is very low.

【0018】本発明はX線吸収体の内部応力によって引
き起こされる位置ひずみ及び欠陥の修正に起因する歩留
りの低下、高コスト化を改善すると共に、フレネル回折
及び熱発生の影響がなく、高解像度の露光転写が可能な
X線露光用マスク及びそれの製造方法の提供を目的とす
る。
The present invention improves yield reduction and cost increase due to correction of positional distortion and defects caused by the internal stress of the X-ray absorber, and is free from the effects of Fresnel diffraction and heat generation, and has high resolution. An object of the present invention is to provide an X-ray exposure mask capable of exposure transfer and a method for manufacturing the same.

【0019】[0019]

【課題を解決するための手段】本発明のX線露光用マス
クは、 (イ)X線透過膜の両面にX線吸収体がその対向する線
幅が互いに異なるように設けられており、かつ該X線透
過膜が支持枠に保持されていることを特徴としている。
In the X-ray exposure mask of the present invention, (a) X-ray absorbers are provided on both surfaces of an X-ray transmissive film so that the line widths facing each other are different from each other, and It is characterized in that the X-ray transparent film is held by a support frame.

【0020】(ロ)X線透過膜の両面にX線吸収体より
成るパターンがその対向するパターンの線幅が互いに異
なるように形成されており、かつ該X線透過膜が支持枠
に保持されていることを特徴としている。
(B) Patterns made of an X-ray absorber are formed on both surfaces of the X-ray transparent film such that the line widths of the patterns facing each other are different from each other, and the X-ray transparent film is held by a support frame. It is characterized by

【0021】特に、前記X線透過膜の両面に形成したパ
ターンは一方の面のパターンの線幅が他方の面のパター
ンの線幅に比べて全て細くなるように構成されているこ
とを特徴としている。
In particular, the patterns formed on both sides of the X-ray transparent film are characterized in that the line width of the pattern on one surface is made narrower than the line width of the pattern on the other surface. There is.

【0022】又本発明のX線露光用マスクの製造方法と
しては、 (ハ)X線透過膜の両面にX線感光用のレジスト層を形
成し、該両面のレジスト層にX線用マスターマスクを介
してX線を同時に照射した後、現像して処理してレジス
トパターンを形成し、次いで該X線透過膜の両面にX線
吸収体をメッキ処理する工程を利用してX線露光用マス
クを製造したことを特徴としている。
The method of manufacturing the X-ray exposure mask of the present invention includes (C) forming X-ray sensitizing resist layers on both surfaces of the X-ray transmitting film, and forming X-ray master masks on the resist layers on both surfaces. X-ray exposure mask by utilizing the steps of simultaneously irradiating X-rays through the X-ray, developing and processing to form a resist pattern, and then plating an X-ray absorber on both surfaces of the X-ray transmitting film. Is manufactured.

【0023】特に、前記X線透過膜の両面のレジストパ
ターンの線幅が互いに異なるように各要素を設定したこ
とを特徴としている。
In particular, each element is set so that the line widths of the resist patterns on both surfaces of the X-ray transparent film are different from each other.

【0024】(ニ)X線透過膜の両面にX線感光用のレ
ジスト層を形成し、該両面のレジスト層にX線用マスタ
ーマスクを介して一方向からX線を同時に照射した後、
両面のレジスト層を現像処理しレジストパターンを形成
し、このとき両面のレジストパターンの線幅が互いに異
なるように各要素を設定し、次いで該X線透過膜の両面
にX線の吸収体をメッキ処理した後、該レジスト層を剥
離してX線露光用マスクを製造したことを特徴としてい
る。
(D) After forming resist layers for X-ray exposure on both surfaces of the X-ray transparent film, and simultaneously irradiating the resist layers on both surfaces with X-rays from one direction through an X-ray master mask,
The resist layers on both sides are developed to form a resist pattern. At this time, each element is set so that the line widths of the resist patterns on both sides are different from each other, and then an X-ray absorber is plated on both sides of the X-ray transparent film. After the treatment, the resist layer is peeled off to manufacture an X-ray exposure mask.

【0025】特に、前記X線透過膜の両面に形成したレ
ジストパターンはX線照射側の線幅がその反対側の面の
線幅よりも細くなるように各要素を設定していることを
特徴としている。
In particular, the resist patterns formed on both sides of the X-ray permeable film are characterized in that each element is set so that the line width on the X-ray irradiation side is smaller than the line width on the opposite side. I am trying.

【0026】[0026]

【実施例】図1は本発明のX線露光用マスクの実施例1
の要部断面概略図である。
Embodiment 1 FIG. 1 is a first embodiment of an X-ray exposure mask of the present invention.
FIG.

【0027】図中1はX線透過膜、2はX線吸収体であ
り、X線透過膜1の両面に設けている。X線吸収体2よ
りパターンを形成している。3はX線透過膜支持枠であ
り、X線透過膜1を保持している。
In the figure, 1 is an X-ray transparent film, 2 is an X-ray absorber, and is provided on both sides of the X-ray transparent film 1. A pattern is formed by the X-ray absorber 2. An X-ray transparent film supporting frame 3 holds the X-ray transparent film 1.

【0028】本実施例ではX線透過膜1の両面にX線吸
収体2を各々対向するように設けている。このとき一方
の面のX線吸収体2の線幅が他方の面の線幅と異なるよ
うにしている。同図では上面(X線照射側)のX線吸収
体2の線幅が下面のX線吸収体の線幅よりも太くならな
いようにしている。
In this embodiment, X-ray absorbers 2 are provided on both surfaces of the X-ray transparent film 1 so as to face each other. At this time, the line width of the X-ray absorber 2 on one surface is made different from the line width on the other surface. In the same drawing, the line width of the X-ray absorber 2 on the upper surface (X-ray irradiation side) is not made thicker than the line width of the X-ray absorber on the lower surface.

【0029】このように本実施例ではX線吸収体2の内
部応力による位置ずれをX線透過膜1の両面にX線吸収
体2を形成することによって相殺させ、X線吸収体の白
欠陥をX線透過膜1の両面にX線吸収体2を形成するこ
とによって欠陥密度を低減させてX線露光用マスク(X
線露光用ワーキングマスク)の製造時の歩留り向上及び
低コスト化を実現している。
As described above, in this embodiment, the positional deviation of the X-ray absorber 2 due to the internal stress is canceled by forming the X-ray absorbers 2 on both surfaces of the X-ray transparent film 1, and the white defect of the X-ray absorber is cancelled. By forming the X-ray absorbers 2 on both surfaces of the X-ray transparent film 1, the defect density is reduced and the mask for X-ray exposure (X
The production yield and production cost of the working mask for line exposure have been improved.

【0030】又、X線のフレネル回折の影響をX線透過
膜の両面に形成したX線吸収体の線幅をわずかに変える
ことによって抑えている。
Further, the influence of Fresnel diffraction of X-rays is suppressed by slightly changing the line width of the X-ray absorber formed on both surfaces of the X-ray transmitting film.

【0031】又、X線照射によるX線吸収体の発熱をX
線吸収体をX線透過膜の両面に分けて形成することによ
り、表面積を増加させて放熱を効率的に行わせると同時
にX線透過膜の両面(2方向)に熱を放出させて抑える
ことにより、X線吸収体の位置ひずみや白欠陥を露光に
よるフレネル回折の無い高性能な露光転写が可能なX線
露光用マスクを低コスト、高歩留りに達成している。
Further, the heat generated by the X-ray absorber due to X-ray irradiation is reduced to X.
By separately forming the X-ray absorbing film on both sides of the X-ray transmitting film, the surface area is increased to efficiently dissipate heat, and at the same time, heat is released to both sides (two directions) of the X-ray transmitting film to be suppressed. As a result, an X-ray exposure mask capable of performing high-performance exposure transfer without Fresnel diffraction due to positional distortion and white defects of the X-ray absorber is achieved at low cost and high yield.

【0032】本発明のX線露光用マスクに用いるX線吸
収体はどのような形状でも良く、矩形であっても台形で
あっても、又逆台形であっても良く、又両面のX線吸収
体がそれぞれ形状が異なっていても良い。
The X-ray absorber used in the X-ray exposure mask of the present invention may have any shape, and may have a rectangular shape, a trapezoidal shape, an inverted trapezoidal shape, or X-rays on both sides. The absorbers may have different shapes.

【0033】又、厚さは両面の吸収体の合計の厚さでも
ってX線露光用マスクとして機能すれば特に制限は無い
が、白欠陥密度を低減させるにはそれよりも厚い方が良
い。X線透過膜の両面に形成されたX線吸収体のそれぞ
れの太さはどちらが太くても目的に対する効果が有る
が、X線の半影ぼけの為に好ましくはX線源側の吸収体
が被露光基板側の吸収体よりも細くした方が良い。
The thickness is not particularly limited as long as it functions as an X-ray exposure mask with the total thickness of the absorbers on both sides, but a thicker thickness is preferable to reduce the white defect density. Whichever of the X-ray absorbers formed on both sides of the X-ray transparent film has a larger thickness, it has an effect on the purpose, but it is preferable that the absorber on the X-ray source side is preferable because of X-ray penumbra. It is better to make it thinner than the absorber on the exposed substrate side.

【0034】図2は本発明のX線露光用マスクの製造方
法を示す実施例1の説明図である。
FIG. 2 is an explanatory diagram of Example 1 showing a method for manufacturing an X-ray exposure mask of the present invention.

【0035】本実施例ではX線透過膜の両面にメッキ用
電極層及びレジスト層を形成する工程、該レジスト層を
両面同時にX線露光用マスターマスクを用いてX線露
光、現像してレジストパターンを形成する工程、X線吸
収体をメッキする工程、X線露光時に両面の露光量を変
える、或はレジストの感度を変える工程とを利用するこ
とによって両面のレジストパターンの線幅、即ちX線吸
収体の線幅を異ならしめていることを特徴としている。
In this embodiment, a step of forming an electrode layer for plating and a resist layer on both surfaces of an X-ray transparent film, exposing the resist layer to X-rays simultaneously using a master mask for X-ray exposure and developing the resist pattern. Of the resist pattern on both sides, that is, X-rays, by utilizing the steps of forming the X-ray absorber, plating the X-ray absorber, and changing the exposure amount on both surfaces during X-ray exposure or changing the sensitivity of the resist. The feature is that the line width of the absorber is different.

【0036】本実施例におけるメッキ材料としては、X
線を吸収してメッキ可能な材料ならばどのようなもので
も良いが、好ましくは金,銅,ニッケル,プラチナ等が
用いられる。又厚さは両面の吸収体の合計の厚さでもっ
てX線露光用マスクとして機能すれば特に制限は無い
が、白欠陥密度を制限させるには、それよりも厚い方が
良く、マスクを作りやすくするには薄い方が良い。
As the plating material in this embodiment, X
Any material capable of absorbing the wire and plating can be used, but gold, copper, nickel, platinum or the like is preferably used. The thickness is not particularly limited as long as it functions as an X-ray exposure mask with the total thickness of the absorbers on both sides, but in order to limit the white defect density, it is better to use a thicker layer than that. It is better to be thinner to make it easier.

【0037】次に図2を用いて本実施例のX線露光用の
マスクの製造方法について説明する。
Next, a method of manufacturing the mask for X-ray exposure according to this embodiment will be described with reference to FIG.

【0038】0.3〜5mm厚のSi基板11上にCV
D又はスパッター法によりX線透過膜12、例えば窒化
シリコン(SiN),炭化シリコン(SiC)膜を1〜
2μm厚形成する(図2(A))。
CV is formed on the Si substrate 11 having a thickness of 0.3 to 5 mm.
The X-ray transmission film 12, for example, a silicon nitride (SiN) or silicon carbide (SiC) film is formed by D or a sputtering method.
It is formed to a thickness of 2 μm (FIG. 2 (A)).

【0039】次いで裏面を水酸化カリウム水溶液又は硝
フッ酸水溶液によってエッチングを行い、窓開けを行う
(図2(B))。X線透過膜の両面にメッキ用電極13
を形成する。X線透過膜の両面のメッキ用電極13上に
X線露光用ポジレジスト層14,15を形成する(図2
(C))。
Next, the back surface is etched with a potassium hydroxide aqueous solution or a nitric hydrofluoric acid aqueous solution to open a window (FIG. 2 (B)). Electrodes for plating 13 on both sides of the X-ray transparent film
To form. Positive resist layers 14 and 15 for X-ray exposure are formed on the plating electrodes 13 on both surfaces of the X-ray transparent film (FIG. 2).
(C)).

【0040】シンクロトロン放射光16をX線露光用マ
スターマスク(不図示)を通してレジスト層にパターン
転写し(図2(D))、その後レジストを現像する17
(図2(E))。このとき例えばレジスト14,15の
感度が同一で放射X線がレジスト層14及びX線透過膜
12に50%程度吸収されるとすれば、放射X線量をレ
ジスト感度の2倍にする。
Synchrotron radiation 16 is transferred onto the resist layer through a master mask (not shown) for X-ray exposure (FIG. 2D), and then the resist is developed 17
(FIG. 2 (E)). At this time, for example, if the sensitivities of the resists 14 and 15 are the same and the radiant X-rays are absorbed by the resist layer 14 and the X-ray transmissive film 12 by about 50%, the radiant X-ray dose is made twice the resist sensitivity.

【0041】これは通常の露光量をレジスト15に到達
させる為であると同時にレジスト層14をオーバー露光
することによりレジスト層14側の線幅をレジスト層1
5側の線幅と異ならせる為である。この両面のレジスト
パターンの線幅の差の制御は、レジスト層14,15の
X線感度を異ならせれば容易に達成できる。つまり線幅
の差を大きくしたければレジスト15の感度をより落と
し、小さくしたければ上げれば良い。
This is because the normal exposure amount reaches the resist 15, and at the same time, by overexposing the resist layer 14, the line width on the resist layer 14 side is adjusted.
This is because the line width is different from that on the 5 side. The control of the difference between the line widths of the resist patterns on both surfaces can be easily achieved by making the X-ray sensitivities of the resist layers 14 and 15 different. In other words, the sensitivity of the resist 15 may be lowered if the difference in line width is increased, and it may be increased if it is decreased.

【0042】次にX線透過膜の両面を同時にメッキを行
い、X線吸収体パターン18を形成する(図2
(F))。メッキは片面づつ行っても良いが内部応力制
限の為には両面同時に行うのが好ましい。膜厚はワーキ
ングマスクを使用する際のX線の波長によって異なり、
長波長になるほど薄くなるが、例えば0.5〜1.5n
m位の波長では両面合わせて0.5〜1.0μmであ
る。レジスト及びメッキ電極を剥離し、これによりX線
露光用マスク(X線露光用ワーキングマスク)を得てい
る(図2(G))。
Next, both surfaces of the X-ray transparent film are simultaneously plated to form the X-ray absorber pattern 18 (FIG. 2).
(F)). The plating may be performed on each side, but it is preferable to perform the plating on both sides simultaneously in order to limit internal stress. The film thickness depends on the wavelength of X-rays when using the working mask,
It becomes thinner as the wavelength becomes longer, but for example, 0.5 to 1.5 n
At the wavelength of m, the total of both surfaces is 0.5 to 1.0 μm. The resist and the plating electrode were peeled off to obtain an X-ray exposure mask (X-ray exposure working mask) (FIG. 2 (G)).

【0043】次に本実施例のX線露光用マスクの製造方
法における実施例の具体的な数値例を用いて説明する。
Next, description will be made using specific numerical examples of the embodiment of the method for manufacturing the X-ray exposure mask of this embodiment.

【0044】2mm厚のSi基板11上にCVD法によ
りSiN膜12を2μm厚形成した(図2(A))。次
いで裏面を水酸化カリウム水溶液によってエッチングを
行い、窓開けを行った(図2(B))。X線透過膜の両
面にメッキ用電極13を形成した。X線透過膜の両面の
メッキ用電極上にX線露光用ポジレジスト層(RAY−
PF,ヘキスト社製)14,15を形成した(図2
(C))。シンクロトロン放射光16をX線露光用マス
ターマスク(不図示)を通してレジスト層にパターン転
写し(図2(D))、レジストを現像した17(図2
(E))。このとき露光量は150mJ/cm であ
り通常の2倍の照射量であった。
A SiN film 12 having a thickness of 2 μm was formed by a CVD method on a Si substrate 11 having a thickness of 2 mm (FIG. 2A). Then, the back surface was etched with an aqueous potassium hydroxide solution to open a window (FIG. 2 (B)). The plating electrodes 13 were formed on both surfaces of the X-ray transparent film. On the plating electrodes on both sides of the X-ray transparent film, a positive resist layer for X-ray exposure (RAY-
(PF, manufactured by Hoechst) 14 and 15 were formed (FIG. 2).
(C)). The synchrotron radiation 16 was transferred to a resist layer through a master mask (not shown) for X-ray exposure (FIG. 2D), and the resist was developed 17 (FIG. 2).
(E)). At this time, the exposure amount was 150 mJ / cm 2 , which was twice the usual irradiation amount.

【0045】これは第1のレジスト層14及びX線透過
膜12に照射X線は50%程度吸収され、第2のレジス
ト層15に通常の露光量を到達させる為であると同時
に、第1のレジスト層14をオーバー露光することによ
り線幅を第2のレジスト層15と異ならせる為である。
This is because the irradiated X-rays are absorbed by about 50% in the first resist layer 14 and the X-ray transmissive film 12, and the second resist layer 15 is allowed to reach a normal exposure amount. This is because the line width of the second resist layer 15 is made different from that of the second resist layer 15 by overexposing the resist layer 14.

【0046】この第1層と第2層の線幅の差の制御は、
第1層と第2層のレジストのX線感度を異ならせれば容
易に達成できる。つまり線幅の差を大きくしたければ第
2のレジストの感度をより落とせば良い。
The control of the line width difference between the first layer and the second layer is as follows.
This can be easily achieved by making the X-ray sensitivities of the resists of the first layer and the second layer different. That is, if the difference in line width is to be increased, the sensitivity of the second resist may be further lowered.

【0047】次にX線透過膜の両面を同時に電解金メッ
キを行ない、X線吸収体パターン18を形成した(図2
(F))。金メッキは亜硫酸系メッキ液(Newtro
nex309,EEJA社製)で行った。金メッキの膜
圧はそれぞれ0.35μmであった。レジスト及びメッ
キ電極を剥離し、X線露光用マスクを得た(図2
(G))。
Next, both surfaces of the X-ray transparent film were simultaneously electroplated with gold to form an X-ray absorber pattern 18 (FIG. 2).
(F)). Gold plating is a sulfite-based plating solution (Newtro
Next309, manufactured by EEJA). The film thickness of the gold plating was 0.35 μm. The resist and the plating electrode were peeled off to obtain an X-ray exposure mask (Fig. 2).
(G)).

【0048】作製したX線露光用マスクのX線透過膜の
両面に形成されたX線吸収体の線幅を測定したところ、
第1の面が0.25μmであったのに対して、第2の面
は0.17μmであった。このX線露光用マスクの長寸
法の位置精度を測定したところ、X線透過膜30mm角
内で0.02μm以内であった。又、欠陥検査をしたと
ころ両面合わせての白欠陥は無かった。
When the line width of the X-ray absorbers formed on both sides of the X-ray transmission film of the X-ray exposure mask thus prepared was measured,
The first surface was 0.25 μm, while the second surface was 0.17 μm. When the positional accuracy of the long dimension of this X-ray exposure mask was measured, it was within 0.02 μm within a 30 mm square of the X-ray transparent film. In addition, when a defect was inspected, there was no white defect on both sides.

【0049】次にこのX線露光用マスクを用いてX線露
光を行った。X線の波長は0.6〜1.0nm、マスク
−レジスト間距離40ミクロン、被露光レジストはシリ
コン基板上に形成された1μm厚のポリメチルメタクリ
レートである。露光雰囲気はヘリウム150torrで
あった。
Next, X-ray exposure was performed using this X-ray exposure mask. The X-ray wavelength is 0.6 to 1.0 nm, the mask-resist distance is 40 μm, and the resist to be exposed is polymethyl methacrylate having a thickness of 1 μm formed on a silicon substrate. The exposure atmosphere was helium 150 torr.

【0050】X線露光後、レジストを現像し形状を走査
型電子顕微鏡で観察したところ、従来フレネル回折等の
影響で現れるパターントップの窪みは見られず、矩形の
0.25μm線幅のパターンが形成できた。このレジス
トパターンの長寸法の位置精度を測定したところ、30
mm角内で0.02μm以内であり、X線露光によって
もX線吸収体の温度が上昇することなく高精度な転写を
実現することができた。
After the X-ray exposure, the resist was developed and the shape was observed with a scanning electron microscope. As a result, no depression of the pattern top, which was conventionally caused by Fresnel diffraction or the like, was observed, and a rectangular pattern having a line width of 0.25 μm was observed. I was able to form. The positional accuracy of the long dimension of this resist pattern was measured and found to be 30
It was within 0.02 μm in mm square, and it was possible to realize highly accurate transfer without the temperature of the X-ray absorber rising even by X-ray exposure.

【0051】図3は本発明のX線露光用マスクの製造方
法を示す実施例2の説明図である。本実施例の特徴を具
体的な数値を用いて順次説明する。
FIG. 3 is an explanatory view of a second embodiment showing a method for manufacturing an X-ray exposure mask of the present invention. The features of the present embodiment will be sequentially described using specific numerical values.

【0052】2mm厚のSi基板51上にCVD法によ
り窒化シリコン膜52を2μm厚形成した(図3
(A))。次にこの窒化シリコン上にスパッター法を用
いてタンタル53を約0.7μmの厚さで成膜した。こ
の上層にスパッター法を用いて酸化シリコン膜54を
0.3μm成膜し、更にこの上層に電子線用レジスト層
55を形成した(図3(B))。
A silicon nitride film 52 having a thickness of 2 μm was formed on the Si substrate 51 having a thickness of 2 mm by the CVD method (FIG. 3).
(A)). Next, tantalum 53 was deposited on the silicon nitride by a sputtering method to a thickness of about 0.7 μm. A silicon oxide film 54 having a thickness of 0.3 μm was formed on the upper layer by a sputtering method, and an electron beam resist layer 55 was further formed on the silicon oxide film 54 (FIG. 3B).

【0053】続いてこのレジスト層55を電子線で露
光、現像してレジストパターンを得た。このレジストパ
ターンをマスクとして酸化シリコン54をリアクティブ
イオンエッチングし、更にこの酸化シリコン54をマス
クとしてタンタル53をパターニングした。
Subsequently, the resist layer 55 was exposed to an electron beam and developed to obtain a resist pattern. The silicon oxide 54 was subjected to reactive ion etching using this resist pattern as a mask, and the tantalum 53 was patterned using this silicon oxide 54 as a mask.

【0054】次に基板51の裏面を水酸化カリウム水溶
液によってエッチングを行い、窓開けを行ない(図3
(C))、続いてメッキ用電極層57を形成した後、X
線露光用ネガレジスト層(AZ−PN100,ヘキスト
社製)58を形成した。
Next, the back surface of the substrate 51 is etched with a potassium hydroxide aqueous solution to open a window (see FIG. 3).
(C)), and subsequently, after forming the plating electrode layer 57, X
A negative resist layer for line exposure (AZ-PN100, manufactured by Hoechst) 58 was formed.

【0055】次にシンクロトロン放射光59をタンタル
パターン側からタンタルパターン56をマスクとしてレ
ジスト層58に照射した(図3(D))。これを現像し
てレジストパターン5aを得た(図3(E))。このと
き露光量は250mJ/cm であった。
Next, the resist layer 58 was irradiated with synchrotron radiation 59 from the tantalum pattern side using the tantalum pattern 56 as a mask (FIG. 3D). This was developed to obtain a resist pattern 5a (FIG. 3 (E)). At this time, the exposure amount was 250 mJ / cm 2 .

【0056】次にこのレジストパターン5aに対して金
メッキ5bを0.7μmの厚さ施した(図3(F))。
レジスト及びメッキ用電極を剥離してX線露光用マスク
を得た(図3(G))。
Next, gold plating 5b was applied to the resist pattern 5a to a thickness of 0.7 μm (FIG. 3 (F)).
The resist and the plating electrode were peeled off to obtain an X-ray exposure mask (FIG. 3 (G)).

【0057】作製したX線露光用マスクのX線透過膜の
両面に形成されたX線吸収体の線幅を測定したところ第
1の面(タンタル)が0.25μmであったのに対し
て、第2の面(金)は0.19μmであった。このマス
クの長寸法の位置精度を測定したところ、X線透過膜3
0mm角内で0.03μm以内であった。
When the line widths of the X-ray absorbers formed on both surfaces of the X-ray transmission film of the X-ray exposure mask thus prepared were measured, the first surface (tantalum) was 0.25 μm. The second surface (gold) had a thickness of 0.19 μm. When the positional accuracy of the long dimension of this mask was measured, the X-ray transparent film 3
It was within 0.03 μm within a 0 mm square.

【0058】次にこのマスクを用いてX線露光を行っ
た。X線の波長は0.6〜1.0nm、マスク−レジス
ト間距離40ミクロン、被露光レジストはシリコン基板
上に形成された1μm厚のポリメチルメタクリレートで
ある。露光雰囲気はヘリウム150torrであった。
Next, X-ray exposure was performed using this mask. The X-ray wavelength is 0.6 to 1.0 nm, the mask-resist distance is 40 μm, and the resist to be exposed is polymethyl methacrylate having a thickness of 1 μm formed on a silicon substrate. The exposure atmosphere was helium 150 torr.

【0059】X線露光後、レジストを現像し形状を走査
型電子顕微鏡で観察したところ、従来フレネル回折等の
影響で現れるパターントップの窪みは見られず、矩形の
0.25μm線幅のパターンが形成できた。このレジス
トパターンの長寸法の位置精度を測定したところ、30
mm角内で0.03μmであり、X線露光によってもX
線吸収体の温度が上昇することなく高精度な転写を実現
することができた。
After the X-ray exposure, the resist was developed and the shape was observed with a scanning electron microscope. As a result, no depression of the pattern top, which was conventionally caused by Fresnel diffraction or the like, was observed, and a rectangular pattern with a line width of 0.25 μm was observed. I was able to form. The positional accuracy of the long dimension of this resist pattern was measured and found to be 30
0.03 μm in mm square, and X by X-ray exposure
It was possible to realize highly accurate transfer without increasing the temperature of the line absorber.

【0060】[0060]

【発明の効果】以上詳細に説明したように、本発明によ
れば従来のX線露光用マスクにおいて問題であったX線
吸収体の内部応力による吸収体の位置ずれ、パターンの
欠陥及びX線露光時のフレネル回折によるボケ、X線照
射によるX線吸収体の発熱等の問題点をX線透過膜の両
面にX線吸収体を同一に形成すると共に、両面のX線吸
収体の線幅を異ならせることによって解決している。
As described above in detail, according to the present invention, the positional shift of the absorber due to the internal stress of the X-ray absorber, the pattern defect and the X-ray which are problems in the conventional X-ray exposure mask. Problems such as blurring due to Fresnel diffraction at the time of exposure and heat generation of the X-ray absorber due to X-ray irradiation are formed on both surfaces of the X-ray transmissive film, and the line width of the X-ray absorber on both surfaces is also formed. It is solved by making different.

【0061】即ち、X線吸収体の内部応力による位置ず
れをX線透過膜の両面にX線吸収体を形成することによ
って相殺させ、X線吸収体の白欠陥はX線透過膜の両面
にX線吸収体を形成することによって欠陥密度を低減さ
せ、X線のフレネル回折の影響をX線透過膜の両面に形
成されたX線吸収体の線幅をわずかに変えることによっ
て抑え、X線照射によるX線吸収体の発熱をX線吸収体
をX線透過膜の両面に分けて形成することにより、表面
積を増加させて放熱を効率的に行わせると同時にX線透
過膜の両面(2方向)に熱を放出させて抑えることによ
ってX線吸収体の位置ひずみや露光によるフレネル回折
が無く、欠陥密度の低い実用性の非常に高い露光転写が
可能なX線露光用マスク及びそれの製造方法を達成する
ことができる。
That is, the positional deviation due to the internal stress of the X-ray absorber is canceled by forming the X-ray absorber on both surfaces of the X-ray transparent film, and the white defect of the X-ray absorber is formed on both surfaces of the X-ray transparent film. The defect density is reduced by forming the X-ray absorber, and the influence of Fresnel diffraction of X-rays is suppressed by slightly changing the line width of the X-ray absorbers formed on both sides of the X-ray transmission film. The heat generation of the X-ray absorber due to the irradiation is formed separately on both sides of the X-ray transparent film to increase the surface area and efficiently dissipate heat. X-ray exposure mask which does not have positional distortion of the X-ray absorber and Fresnel diffraction due to exposure by releasing heat in (direction) and has very low defect density and is capable of very high exposure transfer and production thereof. The method can be achieved.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明のX線露光用マスクの実施例1の要
部断面概略図
FIG. 1 is a schematic cross-sectional view of a main part of a first embodiment of an X-ray exposure mask of the present invention.

【図2】 本発明のX線露光用マスクの製造方法の実
施例1の説明図
FIG. 2 is an explanatory diagram of Example 1 of a method for manufacturing an X-ray exposure mask of the present invention.

【図3】 本発明のX線露光用マスクの製造方法の実
施例2の説明図
FIG. 3 is an explanatory diagram of a second embodiment of a method for manufacturing an X-ray exposure mask of the present invention.

【図4】 従来のX線露光用マスクの要部断面概略図FIG. 4 is a schematic cross-sectional view of a main part of a conventional X-ray exposure mask.

【図5】 従来のX線露光用マスクの製造方法の説明
FIG. 5 is an explanatory view of a conventional method for manufacturing an X-ray exposure mask.

【符号の説明】[Explanation of symbols]

1 X線透過膜 2 X線吸収体 3 X線透過膜支持枠 11,51 Si基板 12,52 X線透過膜 13,57 メッキ用電極 14,15,58 レジスト層 16,59 シンクロトロン放射光 17,5a レジストパターン 18,5b X線吸収体 DESCRIPTION OF SYMBOLS 1 X-ray transmission film 2 X-ray absorber 3 X-ray transmission film support frame 11,51 Si substrate 12,52 X-ray transmission film 13,57 Plating electrode 14,15,58 Resist layer 16,59 Synchrotron radiation 17 , 5a Resist pattern 18,5b X-ray absorber

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 X線透過膜の両面にX線吸収体がその対
向する線幅が互いに異なるように設けられており、かつ
該X線透過膜が支持枠に保持されていることを特徴とす
るX線露光用マスク。
1. An X-ray absorbing film is provided on both surfaces of an X-ray transmitting film so as to have different line widths facing each other, and the X-ray transmitting film is held by a support frame. X-ray exposure mask.
【請求項2】 X線透過膜の両面にX線吸収体より成る
パターンがその対向するパターンの線幅が互いに異なる
ように形成されており、かつ該X線透過膜が支持枠に保
持されていることを特徴とするX線露光用マスク。
2. A pattern made of an X-ray absorber is formed on both sides of the X-ray transparent film such that the line widths of the patterns facing each other are different from each other, and the X-ray transparent film is held by a support frame. A mask for X-ray exposure, which is characterized in that
【請求項3】 前記X線透過膜の両面に形成したパター
ンは一方の面のパターンの線幅が他方の面のパターンの
線幅に比べて全て細くなるように構成されていることを
特徴とする請求項2のX線露光用マスク。
3. The patterns formed on both surfaces of the X-ray transparent film are configured such that the line width of the pattern on one surface is smaller than the line width of the pattern on the other surface. The X-ray exposure mask according to claim 2.
【請求項4】 X線透過膜の両面にX線感光用のレジス
ト層を形成し、該両面のレジスト層にX線用マスターマ
スクを介してX線を同時に照射した後、現像して処理し
てレジストパターンを形成し、次いで該X線透過膜の両
面にX線吸収体をメッキ処理する工程を利用してX線露
光用マスクを製造したことを特徴とするX線露光用マス
クの製造方法。
4. A resist layer for X-ray exposure is formed on both surfaces of an X-ray transparent film, and the resist layers on both surfaces are simultaneously irradiated with X-rays through a master mask for X-rays, and then developed and processed. A resist pattern is formed by using the above method, and then an X-ray exposure mask is manufactured using a step of plating an X-ray absorber on both surfaces of the X-ray transmission film. ..
【請求項5】 前記X線透過膜の両面のレジストパター
ンの線幅が互いに異なるように各要素を設定したことを
特徴とする請求項4のX線露光用マスクの製造方法。
5. The method for manufacturing an X-ray exposure mask according to claim 4, wherein each element is set such that the resist patterns on both surfaces of the X-ray transparent film have different line widths.
【請求項6】 X線透過膜の両面にX線感光用のレジス
ト層を形成し、該両面のレジスト層にX線用マスターマ
スクを介して一方向からX線を同時に照射した後、両面
のレジスト層を現像処理しレジストパターンを形成し、
このとき両面のレジストパターンの線幅が互いに異なる
ように各要素を設定し、次いで該X線透過膜の両面にX
線の吸収体をメッキ処理した後、該レジスト層を剥離し
てX線露光用マスクを製造したことを特徴とするX線露
光用マスクの製造方法。
6. A resist layer for X-ray sensitization is formed on both surfaces of an X-ray permeable film, and the resist layers on both surfaces are simultaneously irradiated with X-rays from one direction via a master mask for X-rays. The resist layer is developed to form a resist pattern,
At this time, the respective elements are set so that the line widths of the resist patterns on both surfaces are different from each other, and then the X-ray permeable film is subjected to X
A method for manufacturing an X-ray exposure mask, comprising: plating the line absorber and then peeling off the resist layer to manufacture an X-ray exposure mask.
【請求項7】 前記X線透過膜の両面に形成したレジス
トパターンはX線照射側の線幅がその反対側の面の線幅
よりも細くなるように各要素を設定していることを特徴
とする請求項6のX線露光用マスクの製造方法。
7. The resist pattern formed on both sides of the X-ray transparent film is configured such that each element is set such that the line width on the X-ray irradiation side is smaller than the line width on the opposite side. The method for manufacturing an X-ray exposure mask according to claim 6.
JP28929991A 1991-10-08 1991-10-08 X-ray exposure mask and method of manufacturing the same Expired - Fee Related JP3114286B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28929991A JP3114286B2 (en) 1991-10-08 1991-10-08 X-ray exposure mask and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28929991A JP3114286B2 (en) 1991-10-08 1991-10-08 X-ray exposure mask and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH05121298A true JPH05121298A (en) 1993-05-18
JP3114286B2 JP3114286B2 (en) 2000-12-04

Family

ID=17741388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28929991A Expired - Fee Related JP3114286B2 (en) 1991-10-08 1991-10-08 X-ray exposure mask and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3114286B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160299420A1 (en) * 2015-04-13 2016-10-13 Boe Technology Group Co., Ltd. Mask, manufacturing method thereof and exposure apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160299420A1 (en) * 2015-04-13 2016-10-13 Boe Technology Group Co., Ltd. Mask, manufacturing method thereof and exposure apparatus

Also Published As

Publication number Publication date
JP3114286B2 (en) 2000-12-04

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