JPH0511017A - Temperature characteristic testing device - Google Patents
Temperature characteristic testing deviceInfo
- Publication number
- JPH0511017A JPH0511017A JP3160525A JP16052591A JPH0511017A JP H0511017 A JPH0511017 A JP H0511017A JP 3160525 A JP3160525 A JP 3160525A JP 16052591 A JP16052591 A JP 16052591A JP H0511017 A JPH0511017 A JP H0511017A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- liquid
- chamber
- measured
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置等の電気的
特性試験工程における温度試験を行う場合の温度特性試
験装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature characteristic test apparatus for conducting a temperature test in an electric characteristic test process for semiconductor devices and the like.
【0002】近年、例えば半導体装置の高集積化、高密
度化に伴い、高い信頼性が望まれており、電気的特性試
験を行う際の各種条件を高い精度で行うことが要求され
る。そのため、特に半導体装置に加える温度条件として
極めて小さな誤差範囲で行う必要がある。In recent years, for example, as semiconductor devices have been highly integrated and highly densified, high reliability has been demanded, and it is required to perform various conditions for conducting an electrical characteristic test with high accuracy. Therefore, it is necessary to carry out the temperature condition applied to the semiconductor device within an extremely small error range.
【0003】[0003]
【従来の技術】従来、例えば半導体装置等の電気的特性
試験は、常温、高温又は低温の温度状態でLSIテスト
システムにより特性試験を行う。2. Description of the Related Art Conventionally, for example, an electrical characteristic test of a semiconductor device or the like is performed by an LSI test system at a normal temperature, a high temperature or a low temperature.
【0004】図3に、従来の試験装置の部分構成図を示
す。図3の試験装置において、試験前の半導体装置50
が予備室51において加熱冷却が行われる。例えば、予
備室51内で高温度(90℃〜100℃)に加熱する場
合、予熱されたステンレス製のヒートプレート52など
の上に半導体装置50を置いて予備加熱を行う。FIG. 3 shows a partial configuration diagram of a conventional test apparatus. In the test apparatus of FIG. 3, the semiconductor device 50 before the test
Is heated and cooled in the preliminary chamber 51. For example, when heating to a high temperature (90 ° C. to 100 ° C.) in the preliminary chamber 51, the semiconductor device 50 is placed on the preheated stainless steel heat plate 52 or the like for preheating.
【0005】予備室51で予備加熱された半導体装置5
0はハンドラ53の真空吸着等により保持されて測定室
54内に搬送され、端子が一致されたコンタクト部55
上に載置されて電気的に接触状態にされる。このコンタ
クト部55と室外のテスタ56に接続されて特性が測定
される。この場合、測定室54内にはブロー部57より
所定温度(例えば、200℃又は−100℃)の温風又
はN2ガス等の冷風が供給され、該半導体装置50を所
望の設定値温度まで上昇又は下降させる。この設定値温
度は、図示しないが、測定部54内のサーミスタ等の温
度センサ、及びコンタクト部55のダイオード等の温度
検知器により調節される。The semiconductor device 5 preheated in the preliminary chamber 51.
0 is held by the vacuum suction of the handler 53 or the like and is transferred into the measurement chamber 54, and the contact portion 55 having the terminals matched with each other.
It is placed on and placed in electrical contact. The characteristics are measured by connecting to the contact portion 55 and the outdoor tester 56. In this case, warm air at a predetermined temperature (for example, 200 ° C. or −100 ° C.) or cold air such as N 2 gas is supplied into the measurement chamber 54 from the blower 57 to bring the semiconductor device 50 to a desired set temperature. Raise or lower. Although not shown, the set temperature is adjusted by a temperature sensor such as a thermistor in the measuring unit 54 and a temperature detector such as a diode of the contact unit 55.
【0006】そして、測定の終了した半導体装置50
は、再びハンドラ53により常温室58に搬送され、冷
却プレート59(又はヒートプレート52)により強制
的に常温に戻されるものである。Then, the semiconductor device 50 whose measurement has been completed
Is again conveyed to the room temperature chamber 58 by the handler 53, and is forcibly returned to room temperature by the cooling plate 59 (or the heat plate 52).
【0007】[0007]
【発明が解決しようとする課題】しかし、上述の試験装
置では、測定室54内部をブロー部57による吹き付け
により設定値温度まで上昇又は下降させることから、予
備室51で予備的に温度設定されていても長時間を要す
ると共に、高精度な温度設定を保証できないという問題
がある。However, in the above-mentioned test apparatus, the temperature inside the measuring chamber 54 is raised or lowered to the set value temperature by blowing by the blow portion 57, so that the temperature is preliminarily set in the preliminary chamber 51. However, there is a problem that it takes a long time and a highly accurate temperature setting cannot be guaranteed.
【0008】また、半導体装置が大型化してパッケージ
形状が大型化すると、予備室51を大容量化しなければ
ならず、また、搬送するハンドラ53をも大型にしなく
てはならないという問題がある。Further, when the semiconductor device becomes large and the package shape becomes large, there is a problem that the capacity of the auxiliary chamber 51 must be increased and the handler 53 to be transferred must also be increased in size.
【0009】そこで、本発明は上記課題に鑑みなされた
もので、小型化を図り、かつ短時間で高精度な半導体装
置等の被測定物の温度調節を行う温度特性試験装置を提
供することを目的とする。Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a temperature characteristic testing apparatus which is miniaturized and which adjusts the temperature of an object to be measured such as a semiconductor device with high accuracy in a short time. To aim.
【0010】[0010]
【課題を解決するための手段】上記課題は、被測定物の
温度特性を所定温度下で試験を行う温度特性試験装置に
おいて、測定手段が設けられ、前記被測定物の温度特性
試験を行うための測定室と、該被測定物を該測定室に搬
送する搬送部と、前記所定温度状態で該測定室内に所定
量注入され、該被測定物が浸漬される絶縁性の熱媒体と
を含み、前記熱媒体を、フッ素系不活性液体とすること
により解決される。The above object is to provide a temperature characteristic test apparatus for testing the temperature characteristic of an object to be measured at a predetermined temperature, the measuring means being provided to perform the temperature characteristic test of the object to be measured. Of the measurement chamber, a transport unit for transporting the measurement object to the measurement chamber, and an insulating heat medium into which the measurement object is immersed at a predetermined temperature in a predetermined amount and in which the measurement object is immersed. The problem can be solved by using a fluorine-based inert liquid as the heat medium.
【0011】[0011]
【作用】上述のように、被測定物をフッ素系不活性液体
のような熱媒体に浸漬させている。この場合、熱媒体は
予め所定温度状態に加熱又は冷却して、被測定物を同等
温度にするものである。従って、短時間で被測定物を所
定温度に加熱、冷却することが可能になる。また、被測
定物の温度は熱媒体に依存することから、熱媒体の温度
調節が高精度に行うことができ、試験時における信頼性
の高い温度保証が可能となる。さらに、被測定物が大型
化しても予備加熱冷却のための領域を拡張する必要はな
く装置の小型化を図ることが可能となる。As described above, the object to be measured is immersed in a heating medium such as a fluorine-based inert liquid. In this case, the heat medium is heated or cooled to a predetermined temperature state in advance to bring the object to be measured to the same temperature. Therefore, it becomes possible to heat and cool the object to be measured to a predetermined temperature in a short time. Further, since the temperature of the object to be measured depends on the heat medium, the temperature of the heat medium can be adjusted with high accuracy, and reliable temperature guarantee at the time of test becomes possible. Further, even if the object to be measured is increased in size, it is not necessary to expand the area for preheating and cooling, and the device can be downsized.
【0012】[0012]
【実施例】図1に、本発明の一実施例の構成図を示す。
図1は温度特性試験装置の一部分を示したものであり、
被測定物を例えば半導体装置として説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a block diagram of an embodiment of the present invention.
FIG. 1 shows a part of the temperature characteristic test apparatus,
The DUT will be described as a semiconductor device, for example.
【0013】図1において、測定室1内には半導体装置
2を搬送するハンドラ3が設けられる。また、測定室1
の上面にはコンタクト部4が設けられており、外部のテ
スタ5に電気的に接続される。このコンタクト部4及び
テスタ5により測定手段を構成する。In FIG. 1, a handler 3 for carrying a semiconductor device 2 is provided in the measuring chamber 1. In addition, measurement room 1
A contact part 4 is provided on the upper surface of the and is electrically connected to an external tester 5. The contact portion 4 and the tester 5 constitute a measuring means.
【0014】ここで、測定室1には供給管6及び排出管
7が形成されている。そして、測定室1内に供給管6よ
り所定温度の例えばフッ素系不活性液体の熱媒体8が所
定量注入される。このフッ素系不活性液体は絶縁物であ
り、高揮発性の液体であって熱伝達係数が大きいもので
ある。A supply pipe 6 and a discharge pipe 7 are formed in the measuring chamber 1. Then, a predetermined amount of a heat medium 8 of, for example, a fluorine-based inert liquid at a predetermined temperature is injected into the measurement chamber 1 from the supply pipe 6. This fluorine-based inert liquid is an insulator, is a highly volatile liquid, and has a large heat transfer coefficient.
【0015】まず、測定室1内に供給管6より、例えば
200℃(又は−100℃)の熱媒体(フッ素系不活性
液体)8が注入されて、ある程度満たされた量を維持し
つつ排出管7を介して循環される。この測定室1内にハ
ンドラ3により端子を上向きに吸着された半導体装置2
が搬送されて該熱媒体8に浸漬される。なお、半導体装
置2は、図示しないが予備加熱冷却室である程度の温度
状態にされている。これにより、半導体装置2は短時間
に熱媒体8と同等の温度状態(200℃又は−100
℃)となる。First, a heating medium (fluorine-based inert liquid) 8 of, for example, 200 ° C. (or −100 ° C.) is injected from the supply pipe 6 into the measuring chamber 1, and is discharged while maintaining a certain amount of filling. It is circulated through the pipe 7. A semiconductor device 2 whose terminals are attracted upward by a handler 3 in the measurement chamber 1.
Is transported and immersed in the heat medium 8. Although not shown, the semiconductor device 2 is kept at a certain temperature in the preheating / cooling chamber. As a result, the semiconductor device 2 is in a temperature state (200 ° C. or −100) equivalent to that of the heating medium 8 in a short time.
℃).
【0016】そして、半導体装置2の端子をコンタクト
部4に接触させてテスタ4により電気的温度特性が測定
される。この場合、熱媒体8が高揮発性の絶縁物であっ
ても測定室1内の上方を空間部とすることにより絶縁不
良の発生を防止しているものである。そして、測定後
は、図示しないが、半導体装置2を常温状態として試験
を終了する。Then, the terminals of the semiconductor device 2 are brought into contact with the contact portions 4, and the electrical temperature characteristics are measured by the tester 4. In this case, even if the heat medium 8 is a highly volatile insulating material, the space above the measuring chamber 1 is used to prevent the occurrence of insulation failure. After the measurement, although not shown, the semiconductor device 2 is brought to a room temperature state and the test is completed.
【0017】なお、上記熱媒体8は温度制御が行い易
く、例えば±1℃以内の範囲で温度制御が可能であり、
高精度の温度状態下で試験することができる。また、従
来困難であった−40℃以下の極低温での測定も同様に
行うことができる。さらに、半導体装置2が大型パッケ
ージであっても、加熱冷却のための設備(容量)を大き
くする必要がなく、装置の小型化を図ることができるも
のである。The temperature of the heat medium 8 can be easily controlled, for example, the temperature can be controlled within a range of ± 1 ° C.,
It can be tested under highly accurate temperature conditions. Further, the measurement at an extremely low temperature of −40 ° C. or lower, which has been difficult in the past, can be similarly performed. Further, even if the semiconductor device 2 is a large package, it is not necessary to increase the equipment (capacity) for heating and cooling, and the device can be downsized.
【0018】次に、図2に、本発明の一適用例の構成図
を示す。図2は、特性試験システムを示したもので、複
数(図2上6室)の測定室1及び第1及び第2の液槽1
0a,10b,並びに第1及び第2の熱交換器11a,
11bにより構成される。Next, FIG. 2 shows a block diagram of an application example of the present invention. FIG. 2 shows a characteristic test system, in which a plurality of (six chambers in FIG. 2) measurement chambers 1 and first and second liquid tanks 1 are provided.
0a, 10b, and the first and second heat exchangers 11a,
11b.
【0019】例えば、第1の液槽10aには200℃の
フッ素系不活性液体の熱媒体8が温度調節されて満たさ
れており、第2の液槽10bには−100℃の同様の熱
媒体8が温度調節されて満たされる。そして、供給パイ
プ12により交換器13を介して供給管6より、それぞ
れの測定室1に注入される。また、測定室1の排出管7
より排出パイプ14を介して第1及び第2の熱交換器1
1a,11bを通り、第1及び第2の液槽10a,10
bに循環されるものである。すなわち、交換器13によ
り所望の温度の熱媒体8を測定室1に注入して適宜試験
を行うものである。For example, the first liquid tank 10a is filled with a heat medium 8 of a fluorine-based inert liquid at 200 ° C., the temperature of which is adjusted, and the second liquid tank 10b is filled with the same heat of -100 ° C. The medium 8 is temperature-controlled and filled. Then, it is injected into each measurement chamber 1 from the supply pipe 6 via the supply pipe 12 via the exchanger 13. In addition, the discharge pipe 7 of the measurement chamber 1
The first and second heat exchangers 1 through the discharge pipe 14
1a, 11b, and the first and second liquid tanks 10a, 10
It is circulated in b. That is, the heat medium 8 having a desired temperature is injected into the measurement chamber 1 by the exchanger 13 and an appropriate test is performed.
【0020】また、交換器13を混合器に置換えると、
高温と低温の熱媒体8を適宜混合して所望の設定温度の
熱媒体8を得ることができ、広い温度範囲、高精度な温
度誤差で試験を行うことができるものである。If the exchanger 13 is replaced with a mixer,
The heating medium 8 at a desired set temperature can be obtained by appropriately mixing the heating medium 8 at high temperature and the heating medium at low temperature, and the test can be performed with a wide temperature range and a highly accurate temperature error.
【0021】なお、上記実施例では、被測定物を半導体
装置として示しているが、これに限らず電気的な温度特
性試験の必要な総てのものに適用することができるもの
である。In the above embodiments, the object to be measured is shown as a semiconductor device, but the present invention is not limited to this, and can be applied to all devices that require an electrical temperature characteristic test.
【0022】[0022]
【発明の効果】以上のように本発明によれば、測定室に
所定温度で熱媒体を注入し、該熱媒体に被測定物を浸漬
させることにより、装置の小型化を図ることができ、か
つ、短時間で高精度な被測定物の温度調節で試験を行う
ことができる。As described above, according to the present invention, it is possible to downsize the device by injecting the heat medium into the measuring chamber at a predetermined temperature and immersing the object to be measured in the heat medium. In addition, the test can be performed by adjusting the temperature of the measured object with high accuracy in a short time.
【図1】本発明の一実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図2】本発明の一適用例の構成図である。FIG. 2 is a configuration diagram of an application example of the present invention.
【図3】従来の試験装置の部分構成図である。FIG. 3 is a partial configuration diagram of a conventional test apparatus.
1 測定室 2 半導体装置 3 ハンドラ 4 コンタクト部 5 テスタ 8 熱媒体 1 measurement room 2 Semiconductor device 3 handlers 4 Contact section 5 tester 8 heat medium
Claims (2)
で試験を行う温度特性試験装置において、 測定手段(4,5)が設けられ、前記被測定物(2)の
温度特性試験を行うための測定室(1)と、 該被測定物(2)を該測定室に搬送する搬送部(3)
と、 前記所定温度状態で該測定室(1)内に所定量注入さ
れ、該被測定物(2)が浸漬される絶縁性の熱媒体
(8)と、 を含むことを特徴とする温度特性試験装置。1. A temperature characteristic test apparatus for testing the temperature characteristic of an object to be measured (2) at a predetermined temperature, wherein measuring means (4, 5) is provided, and the temperature characteristic test of the object to be measured (2) is performed. Measuring chamber (1) for carrying out the measurement, and a transport section (3) for transporting the DUT (2) to the measuring chamber
And an insulating heat medium (8) injecting a predetermined amount into the measurement chamber (1) in the predetermined temperature state and immersing the object to be measured (2), Test equipment.
体であることを特徴とする請求項1記載の温度特性試験
装置。2. The temperature characteristic test apparatus according to claim 1, wherein the heat medium (8) is a fluorine-based inert liquid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3160525A JPH0511017A (en) | 1991-07-01 | 1991-07-01 | Temperature characteristic testing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3160525A JPH0511017A (en) | 1991-07-01 | 1991-07-01 | Temperature characteristic testing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0511017A true JPH0511017A (en) | 1993-01-19 |
Family
ID=15716849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3160525A Pending JPH0511017A (en) | 1991-07-01 | 1991-07-01 | Temperature characteristic testing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0511017A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10274667A (en) * | 1997-03-31 | 1998-10-13 | Tokyo Denpa Kk | Automatic temperature characteristic testing device for electronic parts |
JP2009180557A (en) * | 2008-01-29 | 2009-08-13 | Chugoku Electric Power Co Inc:The | Temperature testing machine and temperature testing method |
-
1991
- 1991-07-01 JP JP3160525A patent/JPH0511017A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10274667A (en) * | 1997-03-31 | 1998-10-13 | Tokyo Denpa Kk | Automatic temperature characteristic testing device for electronic parts |
JP2009180557A (en) * | 2008-01-29 | 2009-08-13 | Chugoku Electric Power Co Inc:The | Temperature testing machine and temperature testing method |
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