JPH05110128A - Structure of photoelectric relay - Google Patents
Structure of photoelectric relayInfo
- Publication number
- JPH05110128A JPH05110128A JP26563191A JP26563191A JPH05110128A JP H05110128 A JPH05110128 A JP H05110128A JP 26563191 A JP26563191 A JP 26563191A JP 26563191 A JP26563191 A JP 26563191A JP H05110128 A JPH05110128 A JP H05110128A
- Authority
- JP
- Japan
- Prior art keywords
- light
- chip
- photoelectric relay
- output
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Electronic Switches (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、多極の光電リレーの構
造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a multi-pole photoelectric relay.
【０００２】[0002]
【従来の技術】図４は出力用ＭＯＳＦＥＴ１ａ、１ｂを
用いた一極の光電リレーの回路構成を示しており、この
光電リレーは信号入力端子Ｉａ、Ｉｂに外部信号を入力
させて発光ダイオード２を発光させ、この発光ダイオー
ド２の光を受光した太陽電池３の出力電圧が一定レベル
に達すると、制御回路要素４の働きで出力用ＭＯＳＦＥ
Ｔ１ａ、１ｂをオン動作させ、出力端子Ｏａ、Ｏｂ間を
導通し、出力端子Ｏａ、Ｏｂ間に電源を介して接続した
外部負荷の通電をオンする構成となっている。2. Description of the Related Art FIG. 4 shows a circuit configuration of a one-pole photoelectric relay using output MOSFETs 1a and 1b. This photoelectric relay allows a light emitting diode 2 to operate by inputting an external signal to signal input terminals Ia and Ib. When the output voltage of the solar cell 3 that emits light and receives the light of the light emitting diode 2 reaches a certain level, the control circuit element 4 acts to output MOSFE.
T1a and 1b are turned on, the output terminals Oa and Ob are conducted, and the external load connected between the output terminals Oa and Ob via a power source is turned on.
【０００３】ところでこの光電リレーは発光ダイオード
２のチップを実装したリードフレームと、太陽電池３及
び制御回路要素４の一体チップを実装したリードフレー
ムを発光ダイオード２の発光部位と太陽電池３の受光面
とが対向するように上下一定間隔離して一側に配置し、
更に出力用ＭＯＳＦＥＴ１ａ、１ｂのチップを夫々実装
したリードフレームを他側の並置し、ワイヤーボディン
グでチップ間やチップとリードフレーム間を電気的接続
し、さらにこの状態で上記発光ダイオード２のチップと
太陽電池３及び制御回路要素４の一体０チップとの間を
透明シリコン樹脂をポッティングして一次モールドした
後、全体を不透明な光非透過性樹脂で二次モールドする
構成であった。In this photoelectric relay, the lead frame on which the chip of the light emitting diode 2 is mounted, and the lead frame on which the integrated chip of the solar cell 3 and the control circuit element 4 is mounted are composed of a light emitting portion of the light emitting diode 2 and a light receiving surface of the solar cell 3. It is placed on one side, separated by a certain distance from the top and bottom so that and face each other.
Further, the lead frames on which the chips of the output MOSFETs 1a and 1b are mounted are juxtaposed on the other side, and the chips are electrically connected to each other and the chips and the lead frames are electrically connected by wire boding. The transparent silicon resin was potted between the solar cell 3 and the integrated 0 chip of the control circuit element 4 for primary molding, and then the entire body was secondary-molded with an opaque light-impermeable resin.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上記のよう
な構成では、透明シリコン樹脂による一次モールドは出
力用ＭＯＳＦＥＴ１ａ、１ｂのリードフレームの部分を
除いているため、この部位と、一次モールドした部位と
の位置関係が二次モールドにより固定されるまで、浮き
フレームとなるリードフレームのパッケージサイド部側
に出た部分を切断することができなかった。By the way, in the above-mentioned structure, since the lead mold portion of the output MOSFETs 1a and 1b is excluded from the primary molding by the transparent silicon resin, this portion and the primary molded portion are It was not possible to cut the part of the lead frame, which is the floating frame, on the side of the package side until the positional relationship was fixed by the secondary mold.
【０００５】従って、このような構成ではリードフレー
ムの切断面Ｘが図４に示すように二次モールド後のパッ
ケージサイド部側に露出するため、外部ノイズの影響を
受けやすいという問題があった。またこのような構成で
あるため、多極化を図ろうとしても３極以上の多極は不
可能であった。Therefore, in such a structure, the cut surface X of the lead frame is exposed to the package side portion side after the secondary molding as shown in FIG. 4, so that there is a problem that it is easily affected by external noise. Further, because of such a configuration, even if an attempt is made to increase the number of poles, it is impossible to use three or more poles.
【０００６】本発明は、上記の点に鑑みて為されたもの
で、その目的とするところは多極化ができ、しかもリー
ドフレームの切断面がパッケージサイド部より露出せ
ず、更に２重のモールド構造となるため入出間耐圧が大
きくとれる光電リレーの構造を提供するにある。The present invention has been made in view of the above-mentioned points, and the purpose thereof is to make it possible to make a multi-pole, and the cut surface of the lead frame is not exposed from the package side portion, and further the double mold structure is provided. Therefore, it is an object of the present invention to provide a structure of a photoelectric relay capable of achieving a large withstand voltage between input and output.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記の目的を
達成するために、出力用ＭＯＳＦＥＴと、発光素子と、
この発光素子の光を受光する太陽電池と、太陽電池の出
力で上記出力用ＭＯＳＦＥＴのスイッチングを制御する
制御回路要素とを樹脂モールドして１パッケージとした
光電リレーの構造において、出力用ＭＯＳＦＥＴのチッ
プと、発光素子のチップと、この発光素子の光を受光す
る太陽電池及び太陽電池の出力で上記出力用ＭＯＳＦＥ
Ｔのスイッチングを制御する制御回路要素からなるチッ
プを実装するリードフレームをパッケージサイド方向か
ら配置し、上記各チップを実装したリードフレーム部位
全体を光透過性樹脂で一体モールドするとともにこのモ
ールド部のパッケージサイド方向の面より出たリードフ
レームを切断して一極の光電リレー部を形成し、この光
電リレー部を極数に応じてパッケージサイド方向に並置
した状態で全光電リレー部を光非透過性樹脂で一体モー
ルドしたものである。In order to achieve the above object, the present invention provides an output MOSFET, a light emitting device, and
In a structure of a photoelectric relay in which a solar cell that receives the light of the light emitting element and a control circuit element that controls the switching of the output MOSFET by the output of the solar cell are resin-molded into one package, a chip of the output MOSFET is provided. And a chip of the light emitting element, a solar cell that receives the light of the light emitting element, and the output of the solar cell by the output of the solar cell.
A lead frame for mounting a chip composed of a control circuit element for controlling the switching of the T is arranged from the package side direction, and the entire lead frame portion on which each of the above chips is mounted is integrally molded with a light-transmissive resin, and the package of this molded portion is formed. The lead frame protruding from the side surface is cut to form a one-pole photoelectric relay section, and all photoelectric relay sections are optically non-transmissive with the photoelectric relay sections arranged side by side in the package side direction according to the number of poles. It is integrally molded with resin.
【０００８】[0008]
【作用】而して本発明の構成によれば、出力用ＭＯＳＦ
ＥＴのチップと、発光素子のチップと、この発光素子の
光を受光する太陽電池及び太陽電池の出力で上記出力用
ＭＯＳＦＥＴのスイッチングを制御する制御回路要素か
らなるチップを実装するリードフレームをパッケージサ
イド方向から配置し、上記各チップを実装したリードフ
レーム部位全体を光透過性樹脂で一体モールドするの
で、各リードフレームが固定されて全体のチップの位置
関係が変化しないため、一極の光電リレー部のパッケー
ジサイド方向の面より露出したリードフレームを切断す
ることができる。According to the structure of the present invention, the output MOSF is provided.
The package side is a lead frame on which an ET chip, a chip of a light emitting element, a solar cell that receives the light of the light emitting element, and a control circuit element that controls the switching of the output MOSFET by the output of the solar cell are mounted. Since the entire lead frame part where the above chips are mounted is integrally molded with a light-transmissive resin, each lead frame is fixed and the positional relationship of the entire chip does not change. The lead frame exposed from the surface in the package side direction can be cut.
【０００９】このモールド部のパッケージサイド方向の
面より出たリードフレームを切断して一極の光電リレー
部を形成し、この光電リレー部を極数に応じてパッケー
ジサイド方向に並置した状態で全光電リレー部を光非透
過性樹脂で一体モールドするので、一極の光電リレー部
のパッケージサイド方向の面より出たリードフレームの
面が光非透過性樹脂により覆われて、外部に露出するこ
とが無くなるため、外来ノイズの影響を受けにくくな
る。The lead frame projecting from the surface of the mold part in the package side direction is cut to form a one-pole photoelectric relay part, and the photoelectric relay parts are all arranged side by side in the package side direction according to the number of poles. Since the photoelectric relay part is integrally molded with the light non-transmissive resin, the surface of the lead frame protruding from the one side of the photoelectric relay part in the package side direction should be covered with the light non-transmissive resin and exposed to the outside. Is eliminated, it is less likely to be affected by external noise.
【００１０】また一極の光電リレー部を必要な極数分並
置し、光非透過性樹脂によりモールドすれば良いから、
任意の極数の光電リレーを製作することができる。更に
また全体が二重モールドされるため、入出力間の耐圧が
大きくとれる。Also, since one-pole photoelectric relay sections may be arranged in parallel for the required number of poles and molded with a light-impermeable resin,
Photoelectric relays with any number of poles can be manufactured. Furthermore, since the whole is double-molded, a large withstand voltage between input and output can be obtained.
【００１１】[0011]
【実施例】以下本発明を実施例により説明する。図１は
本発明の光電リレーの構造の一実施例の断面を示してお
り、発光ダイオード２のチップ２０と、太陽電池３及び
制御回路要素４からなるチップ２２はそれぞれを実装し
たリードフレーム１０ａ、１２により上下方向に相対向
配置され、一次モールドの光透過性樹脂Ａを介して発光
ダイオード２の光を太陽電池３で受光できようになって
いる。また出力用ＭＯＳＦＥＴ１ａ（１ｂ）のチップ２
１ａ、２１ｂもリードフレーム１１ａ（１１ｂ）上に実
装されて一次モールドの光透過性樹脂Ａで、上記チップ
２０、２２とともに一体にモールドされている。更にこ
の一次モールド部全体は光非透過性樹脂Ｂで二次モール
ドされており、一側には信号入力端子Ｉａ、Ｉｂを、他
側には出力端子Ｏａ（Ｏｂ）を露出している。EXAMPLES The present invention will be described below with reference to examples. FIG. 1 shows a cross section of one embodiment of the structure of the photoelectric relay of the present invention. A chip 20 of a light emitting diode 2 and a chip 22 composed of a solar cell 3 and a control circuit element 4 are mounted on a lead frame 10a, respectively. The solar cell 3 can receive the light of the light emitting diode 2 through the light-transmissive resin A of the primary mold, which are opposed to each other in the up-down direction. Also, the chip 2 of the output MOSFET 1a (1b)
1a and 21b are also mounted on the lead frame 11a (11b) and are the primary mold of the light-transmissive resin A, and are integrally molded together with the chips 20 and 22. Further, the entire primary molding portion is secondarily molded with the light non-transmissive resin B, and the signal input terminals Ia and Ib are exposed on one side and the output terminal Oa (Ob) is exposed on the other side.
【００１２】次に本発明光電リレーの構造を得る工程に
付いて説明する。つまり、図２に示すように信号入力端
子Ｉａ、Ｉｂ、出力端子Ｏａ、Ｏｂを形成したリードフ
レーム１０ａ、１０ｂ、１１ａ、１１ｂ及び浮きフレー
ムとなるリードフレーム１２を打抜き形成して未切断状
態の金属帯材を、パッケージサイド方向に送りながら、
リードフレーム１０ａ、１１ａ、１１ｂ及びリードフレ
ーム１２のチップ実装部位に、発光ダイオード２のチッ
プ２０、出力用ＭＯＳＦＥＴ１ａ、１ｂのチップ２１
ａ、２１ｂ、更に太陽電池３及び制御回路要素４の一体
チップ２２を実装し、更にワイヤボディングによりチッ
プ間、チップとリードフレーム間を電気的に接続し、図
４に示す回路を構成する。Next, the steps for obtaining the structure of the photoelectric relay of the present invention will be described. That is, as shown in FIG. 2, the lead frames 10a, 10b, 11a, 11b having the signal input terminals Ia, Ib and the output terminals Oa, Ob and the lead frame 12 serving as a floating frame are punched to form an uncut metal. While feeding the band material in the package side direction,
At the chip mounting portions of the lead frames 10a, 11a, 11b and the lead frame 12, the chip 20 of the light emitting diode 2 and the chip 21 of the output MOSFETs 1a, 1b are provided.
a, 21b, the integrated chip 22 of the solar cell 3 and the control circuit element 4 is mounted, and the chips are electrically connected to each other and the chip and the lead frame are electrically connected to each other by wire bonding to form the circuit shown in FIG.
【００１３】このようにして各一極の光電リレー部Ｒの
構成を必要極数分だけ完成し、この後夫々の光電リレー
部Ｒを光透過性樹脂による一次モールドを行なう。図３
においてＡは一次モールドの光透過性樹脂を示す。この
ようにして一次モールドが終了すると、次にリードフレ
ーム部を結合していた図２の斜線部分を切断除去して、
一極の光電リレー部Ｒを得る。この状態で２極であれば
図３に示すように一定間隔離した状態で光非透過性樹脂
Ｂによる２次モールドを斜線の如く行なって、全体を一
体化する。この場合、各光電リレー部Ｒの、パッケージ
サイド方向のリードフレームの切断面は２次モールドの
光非透過性樹脂Ｂで外部には露出しない。In this way, the configuration of each one-pole photoelectric relay section R is completed by the required number of poles, and then each photoelectric relay section R is primary-molded with a light-transmissive resin. Figure 3
In the figure, A indicates a light-transmitting resin of the primary mold. When the primary molding is completed in this manner, the hatched portion in FIG. 2 which is connected to the lead frame portion is next cut and removed,
A one-pole photoelectric relay unit R is obtained. In the case of two poles in this state, as shown in FIG. 3, the secondary molding with the light non-transmissive resin B is performed as shown by diagonal lines in a state of being separated for a certain period, and the whole is integrated. In this case, the cut surface of the lead frame of each photoelectric relay portion R in the package side direction is not exposed to the outside by the light non-transmissive resin B of the secondary mold.
【００１４】[0014]
【発明の効果】本発明は出力用ＭＯＳＦＥＴのチップ
と、発光素子のチップと、この発光素子の光を受光する
太陽電池及び太陽電池の出力で上記出力用ＭＯＳＦＥＴ
のスイッチングを制御する制御回路要素からなるチップ
を実装するリードフレームをパッケージサイド方向から
配置し、上記各チップを実装したリードフレーム部位全
体を光透過性樹脂で一体モールドするので、各リードフ
レームが固定されて全体のチップの位置関係が変化しな
いため、一極の光電リレー部のパッケージサイド方向の
面より露出したリードフレームを切断することができ、
更にモールド部のパッケージサイド方向の面より出たリ
ードフレームを切断して一極の光電リレー部を形成し、
この光電リレー部を極数に応じてパッケージサイド方向
に並置した状態で全光電リレー部を光非透過性樹脂で一
体モールドするので、一極の光電リレー部のパッケージ
サイド方向の面より出たリードフレームの面が光非透過
性樹脂により覆われて、外部に露出することが無くなっ
て外来ノイズの影響を受けにくくなるという効果があ
り、また一極の光電リレー部を必要な極数分並置し、光
非透過性樹脂によりモールドすれば良いから、任意の極
数の光電リレーを製作することができ、更に全体が二重
モールドされるため、入出力間の耐圧が大きくとれると
いう効果がある。According to the present invention, the output MOSFET chip, the light emitting element chip, the solar cell for receiving the light of the light emitting element, and the output of the solar cell by the output of the solar cell are provided.
The lead frame that mounts the chip consisting of control circuit elements that control the switching of the above is arranged from the package side direction, and the entire lead frame part where each chip is mounted is integrally molded with a light-transmissive resin, so each lead frame is fixed. Since the positional relationship of the entire chip does not change, it is possible to cut the lead frame exposed from the surface of the one-sided photoelectric relay section in the package side direction,
Furthermore, the lead frame protruding from the package side surface of the mold part is cut to form a one-pole photoelectric relay part,
According to the number of poles, the photoelectric relay parts are arranged side by side in the package side direction, and all photoelectric relay parts are integrally molded with a non-transparent resin. The surface of the frame is covered with a light non-transmissive resin so that it is not exposed to the outside and is less susceptible to the influence of external noise.In addition, one-pole photoelectric relay units are arranged in parallel for the required number of poles. Since it is sufficient to mold with a light non-transmissive resin, it is possible to manufacture a photoelectric relay with an arbitrary number of poles, and since the whole is double-molded, there is an effect that a large withstand voltage between input and output can be obtained.
【図１】本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
【図２】本発明の一実施例の一次モールドの工程説明図
である。FIG. 2 is a process explanatory diagram of a primary mold according to an embodiment of the present invention.
【図３】本発明の一実施例の二次モールドの工程説明図
である。FIG. 3 is a process explanatory diagram of a secondary mold according to an embodiment of the present invention.
【図４】光電リレーの回路図である。FIG. 4 is a circuit diagram of a photoelectric relay.
【図５】従来例の正面図である。FIG. 5 is a front view of a conventional example.
１ａ、１ｂ 出力用ＭＯＳＦＥＴ ２ 発光ダイオード ３ 太陽電池 ４ 制御回路要素 ２０ チップ ２１ａ チップ ２２ チップ １０ａ リードフレーム １１ａ リードフレーム １２ リードフレーム Ａ 光透過性樹脂 Ｂ 光非透過性樹脂 1a, 1b Output MOSFET 2 Light emitting diode 3 Solar cell 4 Control circuit element 20 Chip 21a Chip 22 Chip 10a Lead frame 11a Lead frame 12 Lead frame A Light transmissive resin B Light non-transmissive resin
Claims (1)
発光素子の光を受光する太陽電池と、太陽電池の出力で
上記出力用ＭＯＳＦＥＴのスイッチングを制御する制御
回路要素とを樹脂モールドして１パッケージとした光電
リレーの構造において、出力用ＭＯＳＦＥＴのチップ
と、発光素子のチップと、この発光素子の光を受光する
太陽電池及び太陽電池の出力で上記出力用ＭＯＳＦＥＴ
のスイッチングを制御する制御回路要素からなるチップ
を実装するリードフレームをパッケージサイド方向から
配置し、上記各チップを実装したリードフレーム部位全
体を光透過性樹脂で一体モールドするとともにこのモー
ルド部のパッケージサイド方向の面より出たリードフレ
ームを切断して一極の光電リレー部を形成し、この光電
リレー部を極数に応じてパッケージサイド方向に並置し
た状態で全光電リレー部を光非透過性樹脂で一体モール
ドしたことを特徴とする光電リレーの構造。1. An output MOSFET, a light emitting element, a solar cell for receiving the light of the light emitting element, and a control circuit element for controlling the switching of the output MOSFET by the output of the solar cell by resin molding. In a packaged photoelectric relay structure, an output MOSFET chip, a light emitting element chip, a solar cell that receives the light of the light emitting element, and the output MOSFET by the output of the solar cell
The lead frame for mounting the chip consisting of the control circuit elements for controlling the switching is arranged from the package side direction, and the entire lead frame part on which each of the above chips is mounted is integrally molded with the light transmissive resin and Direction, the lead frame is cut off to form a one-pole photoelectric relay section, and all photoelectric relay sections are arranged in the package side direction according to the number of poles. Photoelectric relay structure characterized by being integrally molded with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26563191A JPH05110128A (en) | 1991-10-15 | 1991-10-15 | Structure of photoelectric relay |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26563191A JPH05110128A (en) | 1991-10-15 | 1991-10-15 | Structure of photoelectric relay |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05110128A true JPH05110128A (en) | 1993-04-30 |
Family
ID=17419823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26563191A Withdrawn JPH05110128A (en) | 1991-10-15 | 1991-10-15 | Structure of photoelectric relay |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05110128A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4817525A (en) * | 1986-07-08 | 1989-04-04 | Isowa Industry Co., Ltd. | Method and apparatus for synchronously controlling the printing speed of belt-type printing machine |
| US7095055B2 (en) * | 2000-09-04 | 2006-08-22 | Infineon Technologies Ag | Optical transmitter module |
| JP2008159750A (en) * | 2006-12-22 | 2008-07-10 | Matsushita Electric Works Ltd | Optically coupled type semiconductor relay |
| WO2009086294A2 (en) * | 2007-12-21 | 2009-07-09 | Solfocus, Inc. | Leadframe receiver package for solar concentrator |
| US7985921B2 (en) | 2007-11-14 | 2011-07-26 | Solfocus, Inc. | Systems to retain an optical element on a solar cell |
| US20130200397A1 (en) * | 2012-02-03 | 2013-08-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US9012771B1 (en) | 2009-09-03 | 2015-04-21 | Suncore Photovoltaics, Inc. | Solar cell receiver subassembly with a heat shield for use in a concentrating solar system |
| US9331228B2 (en) | 2008-02-11 | 2016-05-03 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
| US9806215B2 (en) | 2009-09-03 | 2017-10-31 | Suncore Photovoltaics, Inc. | Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells |
| US9923112B2 (en) | 2008-02-11 | 2018-03-20 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
| JP2022003662A (en) * | 2020-06-23 | 2022-01-11 | 株式会社東芝 | Semiconductor device and manufacturing method of same |
-
1991
- 1991-10-15 JP JP26563191A patent/JPH05110128A/en not_active Withdrawn
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4817525A (en) * | 1986-07-08 | 1989-04-04 | Isowa Industry Co., Ltd. | Method and apparatus for synchronously controlling the printing speed of belt-type printing machine |
| US7095055B2 (en) * | 2000-09-04 | 2006-08-22 | Infineon Technologies Ag | Optical transmitter module |
| JP2008159750A (en) * | 2006-12-22 | 2008-07-10 | Matsushita Electric Works Ltd | Optically coupled type semiconductor relay |
| US7985921B2 (en) | 2007-11-14 | 2011-07-26 | Solfocus, Inc. | Systems to retain an optical element on a solar cell |
| WO2009086294A2 (en) * | 2007-12-21 | 2009-07-09 | Solfocus, Inc. | Leadframe receiver package for solar concentrator |
| WO2009086294A3 (en) * | 2007-12-21 | 2009-10-22 | Solfocus, Inc. | Leadframe receiver package for solar concentrator |
| US9923112B2 (en) | 2008-02-11 | 2018-03-20 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
| US9331228B2 (en) | 2008-02-11 | 2016-05-03 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
| US9012771B1 (en) | 2009-09-03 | 2015-04-21 | Suncore Photovoltaics, Inc. | Solar cell receiver subassembly with a heat shield for use in a concentrating solar system |
| US9806215B2 (en) | 2009-09-03 | 2017-10-31 | Suncore Photovoltaics, Inc. | Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells |
| US8748907B2 (en) * | 2012-02-03 | 2014-06-10 | Kabushiki Kaisha Toshiba | Optical coupling device |
| JP2013161923A (en) * | 2012-02-03 | 2013-08-19 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
| US20130200397A1 (en) * | 2012-02-03 | 2013-08-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP2022003662A (en) * | 2020-06-23 | 2022-01-11 | 株式会社東芝 | Semiconductor device and manufacturing method of same |
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