JPH05109859A - Method and apparatus for measuring semiconductor device - Google Patents

Abstract

PURPOSE:To shorten the time required for testing process by examining an operation of a semiconductor device to be measured and simultaneously evaluating a measuring item to be measured according to a current value. CONSTITUTION:A digital signal is input to an input terminal 4 of a DUT 1 of a semiconductor device to be measured from a driver/comparator 9 and its controller 11. A current value of the digital signal to be output from an output terminal 5 of the DUT 1 is detected by a current probe 13, input to the driver/comparator 8 and its controller 11 through a buffer amplifier 14, compared with an expected value thereby to simultaneously conduct a function test for examining an operation of the device DUT 1, a leakage test and a fan-out test. Thus, since the function test, the leakage test and the fan-out of the device can be simultaneously conducted, the time required for testing step can be shortened.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a measuring method and a measuring apparatus for a semiconductor device, and more particularly to a measuring method and a measuring apparatus for measuring a plurality of characteristics of a semiconductor device operating with a digital signal by one apparatus. is there.

[0002]

2. Description of the Related Art Regarding the conventional method of measuring a semiconductor device,
This will be described with reference to FIG. FIG. 5 is a diagram showing a conventional method of measuring a digital IC. In the figure, 501 is a digital IC to be measured (hereinafter referred to as DUT), 502 is D
Power supply terminal of UT501, 503 is GND of DUT501
The terminal is grounded at the time of measurement, and 504 is a DUT50.
1 is an input terminal, 505 is an output terminal of DUT 501, 50
6 is a pull-up resistor, 507 is a power source connected to the power source terminal 502 of the DUT 501 to apply a power source voltage, and the output terminal 505 of the DUT 501 is connected to the pull-up resistor 5
The voltage is applied via 06. 508 and 509 are drivers / comparators, 510 and 511 are driver / comparator control units that control the driver / comparators 508 and 509, respectively, and 512 is a control unit that controls the power supply 507 and the driver / comparator control units 510 and 511. ..

Generally, in the case of a digital IC, for example, a function test for confirming whether the device operates, a fan-out test for checking the output characteristic, and each of the measurement items for determining whether or not the semiconductor device normally operates. There is a leak test for checking the leak current of the terminal.

The circuit shown in FIG. 5 is a measuring device for performing a function test among the above-mentioned measurement items. In the method of measuring a digital IC with this measuring device, first, a prescribed digital signal is applied to the input terminal 504 of the DUT 501 from the driver / comparator control unit 511 through the driver / comparator 509. Then, with respect to the digital signal applied to the input terminal 504,
The voltage value of the digital signal output from the output terminal 505 of the DUT 501 is input to the control unit 510 through the driver / comparator 508, and the digital signal output from the output terminal 505 is expected (hereinafter referred to as an expected value).
It is performed by determining whether or not

[0005]

Since the conventional method for measuring a semiconductor device is configured as described above, the measuring device shown in FIG. 5 for performing a function test of a digital IC, for example, is a major device other than the function test. When performing a fan-out test or a leak test, which are measurement items, it is necessary to change the measurement circuit or the like and measure the output characteristics and the leak current again. Therefore, in the test process of the semiconductor device, there are problems that the time required for the process becomes long and the process becomes complicated.

The present invention has been made in order to solve the above problems, and in a measuring device for one semiconductor device, for example, in the case of a digital IC, a function test is performed and a current value other than the function test is used. The purpose of the present invention is to obtain a measurement method capable of simultaneously evaluating different measurement items to be evaluated, such as fan-out test and leak test, and to provide a measuring device suitable for using this method. It is an object.

[0007]

A semiconductor integrated circuit device measuring method according to the present invention is a semiconductor device in which a digital signal is input to a semiconductor device to be measured and a digital signal output from the semiconductor device to be measured is measured. In the above measuring method, the characteristic of the semiconductor device under test is measured by measuring the current value of the output digital signal.

A semiconductor device measuring apparatus according to the present invention comprises:
A digital pattern generator for inputting a digital signal to the input terminal of the semiconductor device under test, a converter for converting the current value of the digital signal output from the output terminal of the semiconductor device under test into a voltage value, and the converter And a measuring unit that measures the voltage value of the transmitted digital signal.

[0009]

According to the semiconductor device measuring method of the present invention, the characteristic of the semiconductor device to be measured is measured by measuring the current value of the digital signal output from the semiconductor device to be measured. It is possible to check the operation of the semiconductor device and simultaneously evaluate the measurement items that can be measured by the current value.

Since the semiconductor device measuring apparatus according to the present invention includes the converter for converting the current value of the digital signal output from the output terminal of the semiconductor device to be measured into the voltage value, the operation of the semiconductor device to be measured. It is possible to simultaneously evaluate and measure the measurement items that can be measured by the current value.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the semiconductor device measuring method of the present invention will be described below with reference to FIG. FIG. 1 is a diagram showing an example of a configuration for carrying out a digital IC measuring method according to the present invention. In FIG. 1, 1 is a DUT to be measured, 2 is a power supply terminal of DUT1, and 3 is a GN of DUT1.
D terminal is grounded at the time of measurement, 4 is an input terminal of DUT1, 5 is an output terminal of DUT1, 6 is a pull-up resistor, and 7 is a power source connected to the power source terminal 2 of DUT1 to apply a power source voltage. Also, a voltage is applied to the output terminal 5 of the DUT 1 via the pull-up resistor 6. Reference numerals 8 and 9 denote drivers / comparators, 10 and 11 denote driver / comparator control units for controlling the driver / comparators 8 and 9, respectively, and 12 denotes a control unit for controlling the power supply 7 and the driver / comparator control units 10 and 11, and the like. Is DUT1
The current prober 14 detects the current value of the digital signal output from the output terminal 5, and the buffer amplifier 14 amplifies the output of the current prober 13 and transmits the detection signal of the current prober 13 to the driver / comparator 8. Driver / comparator 9 and driver / comparator control unit 11
And a driver / comparator 8 and a driver / comparator controller 10 constitute a measuring section.

Next, a DUT using the measurement system shown in FIG.
The measurement method of 1 will be described. The measurement items are a function test, a fan-out test, and a leak test. First, the driver / comparator control unit 11 applies a prescribed digital signal to the input terminal 4 of the DUT 1 through the driver / comparator 9. And input terminal 4
Output terminal 5 of DUT1 for the digital signal applied to
The current value of the digital signal output from the current prober 1
3 and the buffer amplifier 14 detects the current prober 1
3 is amplified and the detection signal of the current prober 13 is transmitted to the driver / comparator 8. A function test is performed by determining whether the digital signal output from the output terminal 5 is the same as the expected value by inputting it to the control unit 10 through the driver / comparator 8.
When the output of UT1 is an open collector, when the current prober 13 detects a state where current is absorbed in the output terminal 5, the output of DUT1 is “L”, and the current prober 13 absorbs current in the output terminal 5. The output of the DUT 1 is "H" when the state of not being detected is detected. The function test is executed by comparing the measurement result thus obtained with the expected value.

At this time, even if the output state of the DUT 1 is a state in which a current is absorbed in the output terminal 5, if the current value absorbed in the output terminal is not greater than the reference value, the DUT 1
By adjusting the buffer amplifier 14 and the driver / comparator 8 so that the output state of 1 is not determined to be "L", it is possible to simultaneously determine that the DUT having a low fan-out capability is defective when the function test is executed.

At this time, the output state of the DUT 1 is
Even if the current is not sucked into the output terminal 5, if there is a leak current equal to or greater than the reference value, the output state of the DUT 1 is not determined to be “H”. It can be judged as defective simultaneously with the function test.

Next, another embodiment of the semiconductor device measuring method of the present invention will be described with reference to FIG. FIG. 2 is a diagram showing another configuration example for implementing the digital IC measuring method according to the present invention. In FIG. 2, 101 is a DUT to be measured, 102 is a power terminal of the DUT 101, 1
Reference numeral 03 is a GND terminal of the DUT 101, which is grounded at the time of measurement, 104 is an input terminal of the DUT 101, and 105 is a D terminal.
UT 101 output terminal, 106 is a pull-up resistor, 10
A power source 7 applies a power supply voltage to the power supply terminal 102 of the DUT 101, and also applies a voltage to the output terminal 105 of the DUT 101 via the pull-up resistor 106. 108,
109 is a driver / comparator, 110 and 111 are driver / comparator control units that control the drivers / comparators 108 and 109, respectively, and 112 is a power supply 10.
7, a control unit for controlling the driver / comparator control units 110 and 111, 115 is an operational amplifier, 116 is a resistor having a resistance value of 1 M ohm, 117 is a resistor having a resistance value of 100 ohm, and 118 is a diode having a rising voltage of 0.5 V. .. Then, the non-inverting input terminal of the operational amplifier 115 is connected to the power source 107, and the inverting input terminal is connected to the pull-up resistor 106.
The resistor 117 and the diode 118 are connected in series between the output terminal and the inverting input terminal of the operational amplifier 115, and the resistor 116 is connected in parallel. This operational amplifier 115, resistors 116 and 117, and diode 118
Form a non-linear current-voltage conversion circuit. The driver / comparator 109 and the driver / comparator control unit 111 constitute a digital pattern generation unit, and the driver / comparator 108 and the driver / comparator control unit 110 constitute a measurement unit.

Next, a DUT using the measurement system shown in FIG.
The measurement method of 1 will be described. The measurement items are a function test, a fan-out test, and a leak test. First, the driver / comparator control unit 111 applies a prescribed digital signal to the input terminal 104 of the DUT 101 through the driver / comparator 109. Then, D is applied to the digital signal applied to the input terminal 104.
The current value of the digital signal output from the output terminal 105 of the UT 101 is converted into a voltage value by the current-voltage conversion circuit, and the digital signal output from the output terminal 105 is transmitted to the driver / comparator 108. A function test is performed by determining whether the digital signal output from the output terminal 105 is input to the control unit 110 through the driver / comparator 108 and is the same as the expected value. For example, the output of the DUT 101 is an open collector. In the case where the current is absorbed in the output terminal 105, the voltage of the output terminal of the operational amplifier 115 of the current-voltage conversion circuit rises according to the current value, and at this time, the DUT 10
The output of 1 is "L", and ideally the voltage of the output terminal of the operational amplifier 115 of the current-voltage conversion circuit is the same as the voltage of the inverting input terminal of the operational amplifier 115 (power supply) in the state where the current is not absorbed in the output terminal 105. The same voltage as the voltage), and at this time, the output of the DUT 101 is “H”. The function test is executed by comparing the measurement result thus obtained with the expected value.

Then, for example, the power supply voltage is 5 V, the leak current is 5 μA or less, and the fan-out characteristic is 2
When it is defined as 0 mA, the output of the operational amplifier 115 is 5.
If it is 5 V or less, the DUT 101 determines that it is in the “H” state, and if the output of the operational amplifier 115 is 7.5 V or more,
The driver / DUT 101 determines that it is in the “L” state.
By setting the conditions of the comparator 108 and the driver / comparator control unit 110, the leak test and the fan-out test can be simultaneously executed during the function test. In this case, when the measured current value is small and the potential difference between the inverting input terminal and the output terminal of the operational amplifier 115 is smaller than the rising voltage of the diode 118, a current flows through the resistor 116, and the measured current value is output to the operational amplifier 115. A voltage obtained by adding 5 V to the voltage of 10 ⁶ times the voltage is obtained. On the other hand, when the current to be measured becomes large and the potential difference between the inverting input terminal and the output terminal of the operational amplifier 115 is larger than the rising voltage of the diode 118, a current flows through the resistor 117 and the output terminal of the operational amplifier 115 shows the measured current value. A voltage obtained by adding 5 V to the voltage of 10 ² times is obtained. Since such non-linear current-voltage conversion is used, there is an advantage that the measurement range is widened and the current measurement accuracy is improved as compared with the case where a current prober is used.
In addition, in order to improve the current measurement accuracy using a current prober, it is necessary to switch the measurement range according to the current value of the current to be measured, but if a non-linear current-voltage conversion circuit is used, it can be changed according to the current value. The effect is that it is not necessary to switch the measurement range.

Next, still another configuration example for carrying out the semiconductor device measuring method according to the present invention will be described with reference to FIG. FIG. 3 is a diagram showing a measuring device of a digital IC to which the method according to the present invention is applied. In the figure, 3
51 is a DUT, 352 is a performance board unit that holds the DUT 351, and has wirings and peripheral circuits necessary for measurement (however, wirings and peripheral circuits are not shown) 353 is a performance board unit 35.
2, a connector 354, a test head unit, 355, a buffer unit in the test head unit 354, 356, a power supply for applying a voltage to the buffer unit 355, 357, an operational amplifier in the buffer unit 355, and its output terminal being inverted. A resistor and a diode connected between the input terminals form a current-voltage conversion circuit, and the power supply 356 is connected to the non-inverting input terminal of the operational amplifier 357. 358,35
Reference numerals 9,363 denote connector parts. Reference numeral 360 is a tester main body, which is a driver / comparator and its control unit.
1 (hereinafter, referred to as pin electronics section), a control section 362 of the tester main body 360, and a connector section 363. The switch in the buffer unit 355 is configured to be externally set for each buffer unit in order to make the measuring apparatus versatile. Further, the pin electronics section 361 can be used as both the digital pattern generating section and the measuring section, and is properly used depending on the case.

The DUT 351 is mounted on the performance board 352. Performance board 352
Are attached to the test head portion 354 by the connector portions 353 and 358. The test head portion 354 and the tester main body 360 are connected by the connector portions 359 and 363.

When performing measurement using the semiconductor device measuring apparatus configured as described above, first, the digital input signal required for the function test of the DUT 351 is input to the DUT 351 from the pin electronics section 361 through the buffer section 355. .. At this time, the internal switch of the buffer unit 355 connected to the input terminal of the DUT 351 opens the left switch and closes the right switch.
The output signal of the DUT 351 is converted into a voltage signal by the current / voltage converter of the buffer unit 355 after being converted into a voltage signal by the current / voltage converter of the buffer unit 355, input to the pin electronics unit 361, and compared with an expected value for determination. At this time, DUT35
As for the internal switch of the buffer unit 355 connected to the output terminal of 1, the right switch is opened and the left switch is closed. At this time, the voltage value applied to the output terminal of the DUT 351 is set by the power supply 356, and the buffer unit 3
It is applied from 55. The function test, fan-out test, and leak test can be performed in the same manner as the measurement method described with reference to FIG. As described above, by disposing the current-voltage conversion circuit in the buffer unit 355, the measuring method according to the present invention can be easily realized.

Next, still another configuration example for carrying out the semiconductor device measuring method according to the present invention will be described with reference to FIG. FIG. 4 is a diagram showing a digital IC measuring apparatus to which the method according to the present invention is applied. In the figure, 4
51 is a DUT, 452 is a performance board unit that holds the DUT 451 and has wiring and peripheral circuits necessary for measurement (however, wiring and peripheral circuits are not shown), and 453 is a performance board unit 45.
2 is a connector unit, 454 is a test head unit, 455 is a buffer unit in the test head unit 454, 457 is an operational amplifier in the buffer unit 455, and current is generated by a resistor and a diode connected between its output terminal and inverting input terminal. It constitutes a voltage conversion circuit. Reference numerals 458, 459 and 463 denote connector parts. A tester main body 460 includes a driver / comparator and a pin electronics section 461 which is a control section thereof, a control section 462 of the tester main body 460, and a connector section 463. The output of the pin electronics section 461 is connected to the non-inverting input terminal of the operational amplifier 457. The switch in the buffer unit 455 is configured to be externally set for each buffer unit in order to make the measuring apparatus versatile. Further, the pin electronics section 461 can be used as both the digital pattern generation section and the measurement section, and can be used properly depending on the case.

The DUT 451 is mounted on the performance board 452. Performance board 452
Are attached to the test head portion 454 by the connector portions 453 and 458. The test head portion 454 and the tester main body 460 are connected by the connector portions 459 and 463.

When the measurement is performed using the semiconductor device measuring apparatus shown in FIG. 4, except for the method of applying a voltage to the inverting input terminal of the operational amplifier 457 and the output terminal of the DUT 451,
The measurement can be performed in the same manner as when using the measurement device shown in FIG.

A voltage is applied from the driver of the pin electronics section 461 to the inverting input terminal of the operational amplifier 457. Therefore, it is possible to perform a function test, a fan-out test, a leak test, and the like in a state where different voltages are applied to the output terminals of the DUT 451. For example, for an IC having a plurality of output terminals having different output formats, appropriate evaluation can be performed by applying a voltage according to each output terminal.

In each of the above embodiments of the semiconductor device measuring method and the measuring device according to the present invention, the DUT is used.
As a method of measuring the current output from the output terminal of, the case of measuring the current using the current prober and the case of using the non-linear type current-voltage conversion circuit have been described, but other methods can be used if the digital signal can be recognized by the current. The above method or another circuit may be used, and the same effect as that of each of the above-described embodiments can be obtained.

In the embodiments shown in FIGS. 3 and 4, the current-voltage conversion circuit is arranged in the test head section.
For example, it may be arranged inside the performance board or the pin electronics part, and if it is a part of the measuring device, the same effect as that of the above-mentioned embodiment is obtained.

Furthermore, in each of the above-described embodiments of the measuring method and the measuring apparatus for the semiconductor device according to the present invention, the semiconductor device to be measured has the open collector type as the output type, but the output type of the other semiconductor device is not limited. It can also be used for measurement of a semiconductor device, and in that case, the current output from the output terminal by connecting to impedance, potential (including ground potential), etc. defined in the measurement standard is the same as in the above embodiment. The same effect as in the above embodiment can be obtained for semiconductor devices under test of other output types.

[0028]

As described above, according to the semiconductor device measuring method of the present invention, the characteristics of the semiconductor device to be measured are measured by measuring the current value of the digital signal output from the semiconductor device to be measured. With this configuration, a plurality of measurement items are evaluated at the same time, so that the test process can be simplified and the time required for the test process can be shortened.

The semiconductor device measuring apparatus according to the present invention comprises a converter for converting a current value of a digital signal output from the output terminal of the semiconductor device under test into a voltage value, and a plurality of measurement items are measured. Since the evaluation is performed at the same time, the test process can be simplified and the time required for the test process can be shortened.

[Brief description of drawings]

FIG. 1 is a diagram showing a measuring method of a digital IC according to an embodiment of the present invention.

FIG. 2 is a diagram showing a measuring method of a digital IC which is another embodiment of the present invention.

FIG. 3 is a digital I according to still another embodiment of the present invention.
It is a figure which shows the measuring apparatus of C.

FIG. 4 is a digital I according to still another embodiment of the present invention.
It is a figure which shows the measuring apparatus of C.

FIG. 5 is a diagram showing a conventional method of measuring a digital IC.

[Explanation of symbols]

 1 DUT 2 power supply terminal 3 GND terminal 4 input terminal 5 output terminal 6 pull-up resistor 7 power supply 8, 9 driver / comparator 10, 11 driver / comparator control unit 12 measurement system control unit 13 current prober 14 buffer amplifier 115 operational amplifier 116, 117 resistance 118 diode 351 DUT 352 performance board 353 connector section 354 test head section 356 power supply 357 operational amplifier 358, 359 connector section 360 tester 361 pin electronics section 362 control section 363 connector section

Claims (2)

[Claims] 1. A method for measuring a semiconductor device in which a digital signal is input to a semiconductor device under test and a digital signal output from the semiconductor device under test is measured, wherein a current value of the output digital signal is measured. The method for measuring a semiconductor device is characterized by measuring the characteristics of the semiconductor device under test. 2. A digital pattern generator for inputting a digital signal to an input terminal of a semiconductor device under test, and a converter for converting a current value of a digital signal output from an output terminal of the semiconductor device under test into a voltage value. A measuring device for a semiconductor device, comprising: a measuring unit that measures a voltage value of a digital signal transmitted from the converter.