JPH05102166A - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus

Info

Publication number
JPH05102166A
JPH05102166A JP26013991A JP26013991A JPH05102166A JP H05102166 A JPH05102166 A JP H05102166A JP 26013991 A JP26013991 A JP 26013991A JP 26013991 A JP26013991 A JP 26013991A JP H05102166 A JPH05102166 A JP H05102166A
Authority
JP
Japan
Prior art keywords
substrate
temperature
semiconductor
manufacturing apparatus
semiconductor manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26013991A
Other languages
Japanese (ja)
Inventor
Hideyuki Tamai
秀幸 玉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP26013991A priority Critical patent/JPH05102166A/en
Publication of JPH05102166A publication Critical patent/JPH05102166A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a semiconductor manufacturing apparatus whose working accuracy inside a face is high by a method wherein the unevenness inside the face in the working operation of a semiconductor-material substrate is eliminated by partially changing the temperature of a substrate-mounting stand on which the semiconductor-material substrate is mounted. CONSTITUTION:This apparatus is constituted in the following manner: the inside of a substrate-mounting stand 2 installed inside a treatment chamber 1 is divided into a plurality of divided chambers 2a, 2b by dividing walls 4; a medium such as pure water or the like whose temperature has been controlled variously is introduced into each of them; and a temperature can be changed partially differently. Thereby, when there exists the difference in a working state between the peripheral part and the central part of a semiconductor-material substrate, the medium whose temperature is different at the peripheral part and in the central part is introduced, and the difference is eliminated by changing the temperature. Thereby, it is possible to enhance the working accuracy of the apparatus inside the face of the substrate.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、基板搭載台上に半導体
材料基板を載置して加工する半導体製造装置に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for mounting and processing a semiconductor material substrate on a substrate mounting table.

【0002】[0002]

【従来の技術】図4(a),(b)は従来のこの種の半
導体製造装置を示す図で、図4(a)は全体構成を示す
正面図、図4(b)は、図4(a)のC−C線による断
面を拡大して示した上面図である。図4において、1は
処理室で、この中に半導体材料基板(図示は省略)が載
置される基板搭載台2が設置されている。3は前記基板
搭載台2の温度を調節する温度調節器である。5は前記
基板搭載台2に設けられた配管口で、ここから純水など
の媒体が供給され、基板搭載台2が温度制御される。
2. Description of the Related Art FIGS. 4 (a) and 4 (b) are views showing a conventional semiconductor manufacturing apparatus of this type, FIG. 4 (a) is a front view showing the overall structure, and FIG. It is the top view which expanded and showed the cross section by the CC line of (a). In FIG. 4, reference numeral 1 is a processing chamber in which a substrate mounting base 2 on which a semiconductor material substrate (not shown) is placed is installed. A temperature controller 3 controls the temperature of the board mounting base 2. Reference numeral 5 denotes a piping port provided on the substrate mounting table 2 through which a medium such as pure water is supplied to control the temperature of the substrate mounting table 2.

【0003】次に、動作について説明する。温度調節器
3によって温度制御された純水などの媒体が、基板搭載
台2に設けられた配管口5に接続された配管より導入さ
れることにより、基板搭載台2上の半導体材料基板の処
理による温度上昇を防ぎ、基板全面を恒温に保つように
なっている。
Next, the operation will be described. A medium such as pure water whose temperature is controlled by the temperature controller 3 is introduced from a pipe connected to a pipe port 5 provided in the substrate mounting table 2 to process the semiconductor material substrate on the substrate mounting table 2. The temperature rise is prevented and the entire surface of the substrate is kept at a constant temperature.

【0004】[0004]

【発明が解決しようとする課題】従来の半導体製造装置
は以上のように構成されているので、半導体材料基板の
外周部と中央部との間、あるいはある部分に偏って温度
差が生じ、加工状態に差が生じて面内が不均一となった
場合でも、これを制御することが困難であるなどの問題
点があった。
Since the conventional semiconductor manufacturing apparatus is constructed as described above, a temperature difference is generated between the outer peripheral portion and the central portion of the semiconductor material substrate or in a certain portion, which causes uneven processing. Even if the surface becomes non-uniform due to a difference in state, there is a problem that it is difficult to control this.

【0005】本発明は、上記のような問題点を解消する
ためになされたもので、半導体材料基板の温度を部分的
に変化させ加工状態の均一性を向上することができ、処
理条件の最適化がはかれる半導体製造装置を得ることを
目的としている。
The present invention has been made in order to solve the above problems, and it is possible to partially change the temperature of the semiconductor material substrate to improve the uniformity of the processing state, and to optimize the processing conditions. The object is to obtain a semiconductor manufacturing apparatus that can be realized.

【0006】[0006]

【課題を解決するための手段】本発明に係る半導体製造
装置は、基板搭載台の内部を所要数の分割室に分割し、
それら複数の分割室に異なる温度の媒体を導入する構成
としたものである。
A semiconductor manufacturing apparatus according to the present invention divides the inside of a substrate mounting table into a required number of division chambers,
The configuration is such that media of different temperatures are introduced into the plurality of divided chambers.

【0007】[0007]

【作用】本発明においては、基板搭載台を複数の分割室
に分割し、これらの分割室のそれぞれに異なる温度の媒
体を導入して部分的に温度が異なる基板搭載台としたこ
とから、半導体材料基板の加工状態の面内の差が顕著に
なる部分で、温度差により生じる加工速度の違いが元来
の差を相殺するようにした結果、面内全体の加工精度が
向上する。また、加工による面内の差の分布によって、
基板搭載台の内部を分割する形を変化させて対応するこ
とが可能である。
According to the present invention, the substrate mounting table is divided into a plurality of divided chambers, and mediums having different temperatures are introduced into the respective divided chambers to form the substrate mounting table having partially different temperatures. In the portion where the difference in the processing state of the material substrate is remarkable in the surface, the difference in the processing speed caused by the temperature difference cancels the original difference, so that the processing accuracy of the entire surface is improved. Also, depending on the distribution of in-plane differences due to processing,
It is possible to deal with this by changing the shape of dividing the inside of the board mounting base.

【0008】[0008]

【実施例】以下、本発明の一実施例を図について説明す
る。図1(a)〜(c)は本発明の半導体製造装置の一
実施例を示す図で、図1(a)は全体構成を示す正面
図、図1(b)は、図1(a)のA−A線による断面を
拡大して示した上面図、図1(c)は、図1(b)のB
−B線による断面図である。図1において、3a,3b
は温度調節器で、図1(b)に示す基板搭載台2の分割
数に対応して設けられている。4は前記基板搭載台2を
周辺部と中央部の分割室2a,2bに分割するための分
割壁で、その他は図4と同一構成部分を示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 (a) to 1 (c) are views showing an embodiment of a semiconductor manufacturing apparatus of the present invention, FIG. 1 (a) is a front view showing the entire structure, and FIG. 1 (b) is FIG. 1 (a). FIG. 1C is a top view showing an enlarged cross section taken along line AA of FIG.
It is a sectional view taken along the line B. In FIG. 1, 3a and 3b
Is a temperature controller, which is provided corresponding to the number of divisions of the board mounting base 2 shown in FIG. Reference numeral 4 denotes a dividing wall for dividing the substrate mounting base 2 into peripheral chambers and central dividing chambers 2a and 2b.

【0009】上記のように構成された半導体製造装置に
おいては、加工状態の面内の差が周辺部と中央部の間で
顕著なことに対して周辺部の分割室2bと中央部の分割
室2aで基板搭載台2の温度を別々に制御することが可
能となるので、温度による加工速度の制御を行い、半導
体材料基板の面内の差を解消して加工精度を向上するこ
とができる。
In the semiconductor manufacturing apparatus configured as described above, the in-plane difference in the processed state is remarkable between the peripheral portion and the central portion, whereas the peripheral divided chamber 2b and the central divided chamber are different from each other. Since the temperature of the substrate mounting table 2 can be controlled separately by 2a, it is possible to control the processing speed according to the temperature, eliminate the in-plane difference of the semiconductor material substrate, and improve the processing accuracy.

【0010】なお、上記実施例では、基板搭載台2を周
辺部と中央部とに2分割し、半導体材料基板の周辺部と
中央部との差を均一化する効果を持たせるようにした
が、本発明はこれに限らず、例えば図2に示すように、
基板搭載台2の内部を直線状の分割壁4aで2分割する
ことにより、半導体基板材料の面内で、ある方向に偏っ
た分布に対して均一化させることができる。
In the above embodiment, the substrate mounting base 2 is divided into a peripheral portion and a central portion so that the difference between the peripheral portion and the central portion of the semiconductor material substrate can be made uniform. The present invention is not limited to this, and, for example, as shown in FIG.
By dividing the inside of the substrate mounting base 2 into two by the linear dividing wall 4a, it is possible to make the distribution of the semiconductor substrate material uniform in a certain direction in a plane.

【0011】また、面内での加工状態の分布が複雑で2
分割では十分でない場合は、図3に示すように、さらに
別の分割壁4bで分割し、複数の分割室2a〜2cを形
成することにより、さらに精度を向上させることができ
る。なお、この分割数は上記各実施例に限らず、4分割
以上としても同様の効果を奏する。
Further, the in-plane machining state distribution is complicated and
When the division is not sufficient, as shown in FIG. 3, the division can be further performed by another division wall 4b to form a plurality of division chambers 2a to 2c, whereby the accuracy can be further improved. The number of divisions is not limited to that in each of the above embodiments, and the same effect can be obtained even if the number of divisions is four or more.

【0012】[0012]

【発明の効果】以上説明したように、本発明によれば、
半導体材料基板を載置する基板搭載台を所要数の適宜な
形状の分割室に分割することによって、温度を部分的に
異なる温度に調節できるように構成したので、半導体材
料基板の加工均一性を高精度に仕上げることができる効
果がある。
As described above, according to the present invention,
By dividing the substrate mounting table on which the semiconductor material substrate is placed into the required number of dividing chambers of an appropriate shape, the temperature can be partially adjusted to different temperatures, so that the processing uniformity of the semiconductor material substrate can be improved. It has the effect of finishing with high precision.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による半導体製造装置を示す
図である。
FIG. 1 is a diagram showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.

【図2】本発明の基板搭載台の他の実施例を示す断面上
面図である。
FIG. 2 is a sectional top view showing another embodiment of the substrate mounting base of the present invention.

【図3】本発明の基板搭載台のさらに他の実施例を示す
断面上面図である。
FIG. 3 is a sectional top view showing still another embodiment of the substrate mounting base of the present invention.

【図4】従来の半導体製造装置を示す図である。FIG. 4 is a diagram showing a conventional semiconductor manufacturing apparatus.

【符号の説明】[Explanation of symbols]

1 処理室 2 基板搭載台 3a 温度調節器 3b 温度調節器 4 分割壁 4a 分割壁 4b 分割壁 5 配管口 1 processing chamber 2 substrate mounting base 3a temperature controller 3b temperature controller 4 dividing wall 4a dividing wall 4b dividing wall 5 piping port

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/31 B 8518−4M Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/31 B 8518-4M

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 処理室内に設置され、媒体によって温度
調節された基板搭載台上に半導体材料基板を載置して加
工する半導体製造装置において、前記基板搭載台を分割
壁により複数の分割室に分割し、前記分割室のそれぞれ
が異なる温度の媒体を導入して部分的に温度の異なる基
板搭載台としたことを特徴とする半導体製造装置。
1. In a semiconductor manufacturing apparatus, which is installed in a processing chamber and mounts and processes a semiconductor material substrate on a substrate mounting base whose temperature is controlled by a medium, the substrate mounting base is divided into a plurality of dividing chambers by dividing walls. 2. A semiconductor manufacturing apparatus, characterized in that the substrate is divided into parts, and a medium having a different temperature is introduced into each of the divided chambers to form a substrate mounting table having a partially different temperature.
JP26013991A 1991-10-08 1991-10-08 Semiconductor manufacturing apparatus Pending JPH05102166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26013991A JPH05102166A (en) 1991-10-08 1991-10-08 Semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26013991A JPH05102166A (en) 1991-10-08 1991-10-08 Semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPH05102166A true JPH05102166A (en) 1993-04-23

Family

ID=17343850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26013991A Pending JPH05102166A (en) 1991-10-08 1991-10-08 Semiconductor manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPH05102166A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134731A (en) * 2002-05-08 2004-04-30 Asm Internatl Nv Temperature control of sheet-fed semiconductor-substrate processing reactor
US10446419B2 (en) 2016-03-11 2019-10-15 Toshiba Memory Corporation Semiconductor manufacturing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134731A (en) * 2002-05-08 2004-04-30 Asm Internatl Nv Temperature control of sheet-fed semiconductor-substrate processing reactor
US10446419B2 (en) 2016-03-11 2019-10-15 Toshiba Memory Corporation Semiconductor manufacturing apparatus

Similar Documents

Publication Publication Date Title
US5036630A (en) Radial uniformity control of semiconductor wafer polishing
WO1990013687A3 (en) Apparatus and method for treating flat substrates under reduced pressure
JP2000294538A (en) Vacuum treatment apparatus
JP2005510368A (en) Support for abrasive belt
JPH05102166A (en) Semiconductor manufacturing apparatus
JPH05243191A (en) Dry etching device
JPH0845909A (en) Sample stand
JPH0227715A (en) Heating stage for vapor growth device
US6176967B1 (en) Reactive ion etch chamber wafer masking system
JPH01305524A (en) Plasma cvd device
US6828246B2 (en) Gas delivering device
US3958587A (en) Manifold for fluid distribution and removal
JPS61174388A (en) Etching device
JPS60257512A (en) Cooling of substance in vacuum processing apparatus
JPH098108A (en) Semiconductor substrate heating holder
JPH04177857A (en) Boat for supporting wafer
KR100236709B1 (en) Pedestal of semiconductor manufacturing apparatus
SU444276A1 (en) Element for placing substrates in a horizontal chamber
JP2546111B2 (en) Coating device
JP2559300B2 (en) Method for polishing semiconductor wafer
KR20020027974A (en) Boat of CVD apparatus having loading plate
JP2001088038A (en) Tool and method for polishing substantially flat surface
JPH05267202A (en) Wafer support boat
KR20000028129A (en) Device for etching used to production of semiconductor device
JPH02186628A (en) Chemical vapor growth device