JPH05101804A - Ion implanting device - Google Patents

Abstract

PURPOSE:To efficiently discharge dust produced from a clamp pin driving part or the like in a short time to the outside of a processing chamber. CONSTITUTION:A gas jet nozzle 15 movable in the position direction via a bellows 19, a driving mechanism for moving the gas jet nozzle 15 to the jetting place, and a control part 20 for controlling the driving mechanism are provided on the wall of a processing chamber 5 facing a part of a disk 9 for fixing a wafer. A purge gas is jetted to a dust source such as a clamp pin driving part.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implanter for implanting impurity ions into a semiconductor substrate to form an impurity layer on the surface of the semiconductor substrate, and more particularly to an ion implanter having a dust removing mechanism.

[0002]

2. Description of the Related Art FIG. 2 is a schematic cross-sectional view of a processing chamber in an ion implantation apparatus showing a conventional example. 2. Description of the Related Art Conventionally, as shown in FIG. 2, for example, an ion implantation apparatus of this type has a disk 9 for fixing and rotating a plurality of wafers, a clamp pin 8 for fixing the wafer to the disk 9, and a wafer attachment / detachment device A processing chamber for accommodating the clamp drive push-up mirinder rod 13 of the clamp pin drive 4 for removing the clamp pin 8 from the wafer and the disk 9 and attaching the lens barrel of the ion gun through the isolation valve 7 5 has a purge gas inlet 1 for bringing the processing chamber 5 to atmospheric pressure, and a vacuum pump 10 for evacuating the inside of the processing chamber 5.

When this ion implanter is used for a long period of time, metal powder is generated from the sliding parts of the wafer transfer system and the wafer clamp mechanism due to wear of the metal material, and dust on the wafer surface to be processed is generated. Adhesion will gradually increase.

In such a case, when the dust generation exceeds a level which causes a problem in the use of the apparatus, the processing chamber 5 and the surface of the disk 9 are usually cleaned, or the processing chamber 5 is purged from the purge gas inlet 1. After introducing the purge gas, the inside of the processing chamber 5 is evacuated by the vacuum pump 10, and the dust generated in the processing chamber 5 is discharged to the outside of the processing chamber 5.

[0005]

In the conventional ion implanter, when the adherence of dust on the wafer surface exceeds the standard,
The processing chamber and the disk in the processing chamber are cleaned, or dust generated in the processing chamber is discharged to the chamber by repeating gas purging and evacuation of the processing chamber.

It takes a lot of time and labor to carry out such an operation and bring the apparatus into a normal use state.
It was difficult to effectively clean the place where dust was generated.

An object of the present invention is to provide an ion implanter having means capable of effectively removing dust in a short time in order to solve such a problem.

[0008]

The ion implantation apparatus of the present invention is a disk for fixing a wafer into which ions are implanted, a processing chamber for housing the disk, and the processing chamber facing the wafer fixing portion of the disk. , A gas injection nozzle that is attached to the wall of the container in a sealed manner via a bellows, a drive mechanism that moves the gas injection bellows within a flexible range, and a control unit that controls the drive of the drive mechanism.

[0009]

The present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view of a processing chamber in an ion implantation apparatus showing an embodiment of the present invention. As shown in FIG. 1, in this ion implantation apparatus, a gas injection nozzle 15 for injecting a purge gas is attached to one of the processing chambers 5 facing the wafer fixing portion 6 of a disk 9 via a rose 19 and the gas injection nozzle 15 is attached. That is, a drive mechanism for moving the unidirectional movement is provided. Otherwise, it is the same as the conventional example.

Further, the drive mechanism of the gas injection nozzle 15 is a motor 18 with a rotary encoder that meshes with a nut of a support body attached to the flange portion of the bellows 19.
And a control unit 20 that controls the rotation of the motor 18 with the rotary encoder.

This gas injection nozzle injects the purge gas whose pressure is adjusted through the filter 3, and the gas injection nozzle 15 moves within the flexible range of the bellows 19 by the sequence control of the control unit 20, and the clamp pin drive unit 4 is operated. Inject the purge gas to the dust generation area. At the same time, the vacuum pump 10 operates and the dust removed by the purge gas is discharged to the outside of the processing chamber 5. After performing the removing work for a certain period of time, the gas ejecting nozzle 15 is moved to the next sliding part such as the clamp pin driving part 4 by the above means, and the removing work is repeated.

[0013]

As described above, according to the ion implantation apparatus of the present invention, by providing the gas injection nozzle that moves to one side at the position of the processing chamber facing the disk for fixing the wafer and performing the implantation, Since the purge gas can be sprayed mainly to the sliding portion such as the clamp pin driving portion which is a dust generating portion, the cleaning can be effectively performed and the cleaning time can be shortened.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a processing chamber in an example of an ion implantation apparatus of the present invention.

FIG. 2 is a schematic cross-sectional view showing a processing chamber in an example of a conventional ion implantation device.

[Explanation of symbols]

 1 Purge Gas Inlet 2 Valve 3 Filter 4 Clamp Pin Drive 5 Processing Chamber 6 Wafer Fixing 7 Isolation Valve 8 Clamp Pin 9 Disk 10 Vacuum Pump 11 Exhaust Port 12 Cylinder 13 Clamp Drive Pushup Rod 15 Gas Injection Nozzle 16 Liner Bearing 17 Ball screw 18 Motor with rotary encoder 19 Bellows 20 Controller

Claims (1)

[Claims] 1. A disk for fixing a wafer into which ions are implanted, and a processing chamber for housing the disk,
A gas injection nozzle attached to a wall of the processing chamber facing the fixed portion of the wafer of the disk via a bellows, a drive mechanism for moving the gas injection bellows within a flexible range, and a drive of the drive mechanism. An ion implantation apparatus comprising: a controller that controls the ion implantation.