JPH0499861A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPH0499861A JPH0499861A JP21491090A JP21491090A JPH0499861A JP H0499861 A JPH0499861 A JP H0499861A JP 21491090 A JP21491090 A JP 21491090A JP 21491090 A JP21491090 A JP 21491090A JP H0499861 A JPH0499861 A JP H0499861A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- film
- oxygen
- metal
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 6
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000007789 gas Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000000470 constituent Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 33
- 238000002844 melting Methods 0.000 claims description 18
- 230000008018 melting Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000005546 reactive sputtering Methods 0.000 abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008859 change Effects 0.000 abstract description 3
- 230000009257 reactivity Effects 0.000 abstract description 3
- 239000007795 chemical reaction product Substances 0.000 abstract description 2
- 229960001730 nitrous oxide Drugs 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄膜形成方法に関し、特にスバ・ツタリングに
より膜質の均一な高融点金属の酸窒化膜を形成する方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a thin film, and more particularly to a method for forming an oxynitride film of a refractory metal with uniform film quality by means of sputtering.
本発明は、高融点金属の酸窒化膜を形成するに際し、窒
素と酸素とを構成元素とするガスを含む雰囲気中で反応
性スパッタリングを行うことにより、高融点金属の酸化
反応を制御して膜質均一性の向上を図るものである。When forming an oxynitride film of a high melting point metal, the present invention performs reactive sputtering in an atmosphere containing a gas containing nitrogen and oxygen as constituent elements to control the oxidation reaction of the high melting point metal and improve the film quality. This aims to improve uniformity.
半導体装置のデザイン・ルールの微細化に伴い、アルミ
ニウム配線の信頼性を向上させるためにその下層に配さ
れるバリヤメタル、あるいはパターニング時の反射防止
を目的として設けられる反射防止膜等を構成する材料層
として、Ｔ ｉＯＸ Ｎ ｙに代表されるような高融点
金属の酸窒化膜が多用されるようになってきている。こ
れらの酸窒化膜は一般に反応性スパッタリングにより成
膜されている。たとえば上記のＴ ｉ ０ＸＮｙは、０
□ガスとＮ２ガスとの混合ガス雰囲気中、もしくはこれ
にアルゴン等の希ガスを添加した混合ガス雰囲気中にお
いてＴｉターゲットをスパッタリングすることにより成
膜される。With the miniaturization of semiconductor device design rules, material layers that make up barrier metals placed below aluminum wiring to improve reliability, or anti-reflection films provided to prevent reflections during patterning. As such, oxynitride films of high melting point metals such as TiOXNy are increasingly being used. These oxynitride films are generally formed by reactive sputtering. For example, the above T i 0XNy is 0
The film is formed by sputtering a Ti target in a mixed gas atmosphere of □ gas and N2 gas, or in a mixed gas atmosphere to which a rare gas such as argon is added.
スパッタリングにおいては成膜速度も工業上重要なファ
クターである。しかし、高融点金属は金銀、銅等の低融
点金属に比べてスパッタリング率が低いので、高融点金
属ターゲットに対してスパッタリングを行う場合には、
電力効率に優れるマグネトロン・スパッタリング方式が
通常適用されている。In sputtering, film formation speed is also an important industrial factor. However, since high melting point metals have a lower sputtering rate than low melting point metals such as gold, silver and copper, when performing sputtering on a high melting point metal target,
A magnetron sputtering method, which has excellent power efficiency, is usually applied.
しかし、マグネトロン・スパッタリング方式による反応
性スパッタリングでは、得られる膜の膜質を面内にわた
って均一化することが困難である。However, with reactive sputtering using a magnetron sputtering method, it is difficult to make the quality of the obtained film uniform over the entire surface.
これは、マグネトロン・スパッタリング方式では磁束の
存在により、ターゲットに衝突するイオンの面内分布を
均一化することができないからである。すなわち、電子
が磁力線を巻くようにサイクロイド運動を行っている領
域では多（のイオンが生成するので、該領域近傍のター
ゲット表面では多くのイオンが衝突してスパッタ量が多
くなるが、それ以外の領域ではイオンの生成量が少ない
ためターゲットのスパッタ量も少なくなる。This is because in the magnetron sputtering method, the presence of magnetic flux makes it impossible to make the in-plane distribution of ions colliding with the target uniform. In other words, a large number of ions are generated in a region where electrons are moving in a cycloidal manner as if winding magnetic lines of force, so many ions collide with the target surface near the region, resulting in a large amount of sputtering. Since the amount of ions produced in this region is small, the amount of target sputtering is also reduced.
さらに反応性スパッタリングの機構を考えた場合、ター
ゲット表面におけるスパッタ量は反応の進行度に影響し
、ひいては膜質に影響する。特に、高融点金属の酸窒化
膜がバリヤメタルとして使用される場合には、抵抗の面
内分布が大きな問題となる。つまり、スパッタ量の少な
い領域では酸化および窒化が余分に進行するので、対向
配置される基板上には抵抗の比較的高い膜が形成され、
スパッタ量の多い領域ではより高融点金属の単体に近い
組成を有し抵抗の比較的低い膜が形成されてしまう。従
来の酸窒化膜の形成方法では、スパッタリング雰囲気中
に酸素供給源として０２ガスが添加されているが、０□
ガスと高融点金属との反応性が高く酸化反応が極めて速
やかに進行するために、スパッタ量の不均一性の影響が
抵抗率の変化に大きく反映され易い。たとえば、５イン
チ・ウェハ上にＴ ｉ Ｏ，Ｎ、を成膜した場合、ウェ
ハ面に沿ってみた場合のシート抵抗の分布は約２０％に
も及んでしまう。Furthermore, when considering the mechanism of reactive sputtering, the amount of sputtering on the target surface affects the progress of the reaction, which in turn affects the film quality. In particular, when an oxynitride film of a high melting point metal is used as a barrier metal, the in-plane distribution of resistance becomes a big problem. In other words, oxidation and nitridation proceed excessively in areas where the amount of sputtering is small, so a film with relatively high resistance is formed on the opposing substrates.
In a region where the amount of sputtering is large, a film having a composition closer to that of a single high melting point metal and having a relatively low resistance is formed. In the conventional method for forming an oxynitride film, 02 gas is added as an oxygen supply source to the sputtering atmosphere, but 0□
Since the reactivity between the gas and the high-melting point metal is high and the oxidation reaction progresses extremely quickly, the influence of non-uniformity in the amount of sputtering tends to be largely reflected in the change in resistivity. For example, when a film of T i O,N is formed on a 5-inch wafer, the sheet resistance distribution when viewed along the wafer surface reaches about 20%.
そこで本発明は、上述の問題を解決し、反応性スパッタ
リングにより高融点金属の酸窒化膜を形成する際の膜質
均一性を向上させることを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and improve the uniformity of film quality when forming an oxynitride film of a high melting point metal by reactive sputtering.
本発明の薄膜形成方法は上述の目的を達成するために提
案されるものであり、窒素と酸素とを構成元素とするガ
スを含む雰囲気中で高融点金属からなるターゲットのス
パッタリングを行うことにより前記高融点金属の酸窒化
膜を形成することを特徴とするものである。The thin film forming method of the present invention is proposed to achieve the above-mentioned object, and the thin film forming method of the present invention is proposed by sputtering a target made of a high melting point metal in an atmosphere containing a gas containing nitrogen and oxygen as constituent elements. This method is characterized by forming an oxynitride film of a high melting point metal.
本発明では、反応性スパッタリングにより高融点金属の
酸窒化膜を形成するための酸素供給源として、スパッタ
リング雰囲気中に従来の０２ガスに替えて、酸素と窒素
とを構成元素とするガスが添加されている。酸素と窒素
とを構成元素とするガスは、０゜ガスに比べて高融点金
属との反応性が低いので、ターゲット表面における高融
点金属のスパッタ量が面内でばらついても反応生成物の
組成が変動しにくい。したがって、上記ターゲットに対
向配置される基板上においても、形成される酸窒化膜の
膜質均一性が改善される。In the present invention, a gas containing oxygen and nitrogen as constituent elements is added to the sputtering atmosphere in place of the conventional 02 gas as an oxygen supply source for forming an oxynitride film of a high melting point metal by reactive sputtering. ing. Gases whose constituent elements are oxygen and nitrogen have lower reactivity with high-melting point metals than 0° gases, so even if the sputtering amount of high-melting point metals on the target surface varies within the surface, the composition of the reaction product will remain constant. is difficult to change. Therefore, the uniformity of the film quality of the oxynitride film formed is improved even on the substrate disposed opposite to the target.
以下、本発明の薄膜形成方法の具体的な適用例を実験結
果にもとづいて説明する。Hereinafter, specific application examples of the thin film forming method of the present invention will be explained based on experimental results.
実験例
ここでは、窒素と酸素とを構成元素とするガスとして酸
化二窒素Ｎ２０ を使用し、シリコン・ウェハ上にＴｉ
Ｃ１＋Ｎｙ膜を成膜する実験を行った。Experimental Example Here, dinitrogen oxide N20 is used as a gas containing nitrogen and oxygen as constituent elements, and Ti is deposited on a silicon wafer.
An experiment was conducted to form a C1+Ny film.
すなわち、マグネトロン・スパッタリング装置のスパッ
タ・チャンバー内に５インチ径のシリコン・ウェハとＴ
ｉ基板とを対向配置し、Ｎ２ガス流量４４５ＣＣＭ、
ＮｚＯガス流量６５ＣＣＭ、 ガス圧３．７ｍＴｏｒ
ｒ＋ ターゲット電力３ｋＷの条件で反応性スパッタ
リングを行った。その結果、シリコン・ウェハ上に成膜
速度６００人／分にてＴ ｉ Ｏ，Ｎ。That is, a 5-inch diameter silicon wafer and a T
The i-substrate is placed facing the N2 gas flow rate of 445 CCM,
NzO gas flow rate 65CCM, gas pressure 3.7mTor
Reactive sputtering was performed under the conditions of r+ target power of 3 kW. As a result, T i O,N was deposited on silicon wafers at a deposition rate of 600 people/min.
膜が成膜された。このＴ ｉ ＯＸＮ、膜は、酸素含量
がほぼ２０原子％、抵抗率が約１ｍΩ・ｃｍであり、シ
ート抵抗の面内分布はほぼ１０％以内と良好であった。A film was deposited. This T i OXN film had an oxygen content of about 20 atomic %, a resistivity of about 1 mΩ·cm, and a good in-plane distribution of sheet resistance of about 10% or less.
なお、Ｔ ｉ ０ＸＮｙ膜の成膜条件は上述の条件に限
られるものではなく、たとえば雰囲気ガスにＡｒ等の希
ガスを適宜添加したり、基板バイアスを併用することが
できる。これらの場合には、成膜速度が上昇して酸素の
取り込み量が減少するので、Ｎ２ガスに対するＮ２０ガ
スの流量比を上述の条件よりも高める必要がある。Note that the conditions for forming the Ti 0 In these cases, the film formation rate increases and the amount of oxygen taken in decreases, so it is necessary to increase the flow rate ratio of N20 gas to N2 gas compared to the above-mentioned conditions.
また、窒素と酸素とを構成元素とするガスとしては、上
述のＮ２０ の他、ＮＯ，Ｎ２０．、ＮＯ。In addition to the above-mentioned N20, gases containing nitrogen and oxygen as constituent elements include NO, N20. , NO.
（もしくは二量体のＮ２０．）、Ｎｏ３等が実用上好適
である。上記の構成元素からなる化合物としては、他に
Ｎ２０．とＮ、Ｏ，がある。前者は常温常圧で固体の化
合物であるが、昇華し得る条件が設定されれば使用可能
である。しかし、後者は極めて不安定な固体であり、実
用性には乏しい。(or dimer N20.), No.3, etc. are practically suitable. Other examples of compounds consisting of the above constituent elements include N20. There are N, O, and N. The former is a solid compound at room temperature and pressure, but it can be used if conditions are set that allow it to sublimate. However, the latter is an extremely unstable solid and is of little practical use.
比較実験例
ここでは、従来どおり酸素供給源として０２ガスを使用
し、マグネトロン・スパッタリング装置を使用する反応
性スパッタリングにより、同様にシリコン・ウェハ上に
Ｔｉ ０ＸＮｙ膜を成膜する実験を行った。Comparative Experimental Example Here, an experiment was conducted in which a Ti 0XNy film was similarly formed on a silicon wafer by reactive sputtering using a magnetron sputtering device, using 02 gas as an oxygen supply source as before.
条件は、Ｎ２ガス流量４７ ＳＣＣＭ、 Ｏ□ガス流量
３５ＣＣＭ、 ガス圧３．７ ｍＴｏｒｒ、ターゲッ
ト電力３ｋＷ、成膜速度６００人／分とした。形成され
たＴｉ Ｏ，Ｎ、膜は、全体としての酸素含量がほぼ２
０原子％、抵抗率が約１ｍΩ・ｃｍであり、この意味で
は上述の実験例と同等であった。しかし、ウェハ面内で
酸素含量のバラツキがあるために、シート抵抗の面内分
布は約２０％にも及び、前述の実験例と比べて膜質均一
性が大きく劣化していた。The conditions were as follows: N2 gas flow rate 47 SCCM, O□ gas flow rate 35 CCM, gas pressure 3.7 mTorr, target power 3 kW, and film formation rate 600 people/min. The formed TiO,N film has an overall oxygen content of approximately 2
The resistivity was 0 atomic % and the resistivity was about 1 mΩ·cm, and in this sense, it was equivalent to the above-mentioned experimental example. However, due to variations in oxygen content within the wafer plane, the in-plane distribution of sheet resistance reached about 20%, and the film quality uniformity was significantly degraded compared to the above-mentioned experimental example.
以上の説明からも明らかなように、本発明を適用すれば
、従来の方法よりも高融点金属の酸化反応が穏やかに進
行するために、酸窒化膜の組成の面内分布が緩和され、
膜質均一性を向上させることができる。したがって、本
発明は高集積度を有する半導体装置の製造等に特に有効
である。As is clear from the above explanation, when the present invention is applied, the oxidation reaction of the high melting point metal proceeds more gently than in the conventional method, so the in-plane distribution of the composition of the oxynitride film is relaxed,
Film quality uniformity can be improved. Therefore, the present invention is particularly effective for manufacturing semiconductor devices with a high degree of integration.
Claims (1)
融点金属からなるターゲットのスパッタリングを行うこ
とにより前記高融点金属の酸窒化膜を形成することを特
徴とする薄膜形成方法。A method for forming a thin film, comprising forming an oxynitride film of a high melting point metal by sputtering a target made of a high melting point metal in an atmosphere containing a gas containing nitrogen and oxygen as constituent elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21491090A JPH0499861A (en) | 1990-08-16 | 1990-08-16 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21491090A JPH0499861A (en) | 1990-08-16 | 1990-08-16 | Formation of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499861A true JPH0499861A (en) | 1992-03-31 |
Family
ID=16663598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21491090A Pending JPH0499861A (en) | 1990-08-16 | 1990-08-16 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499861A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743668B2 (en) * | 2000-09-18 | 2004-06-01 | Motorola, Inc. | Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber |
| JP2009149953A (en) * | 2007-12-21 | 2009-07-09 | National Institute Of Advanced Industrial & Technology | Method for manufacturing nitride semiconductor and nitride semiconductor device |
| JP2015160995A (en) * | 2014-02-27 | 2015-09-07 | シャープ株式会社 | METHOD FOR MANUFACTURING AlNO BUFFER LAYER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT |
-
1990
- 1990-08-16 JP JP21491090A patent/JPH0499861A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743668B2 (en) * | 2000-09-18 | 2004-06-01 | Motorola, Inc. | Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber |
| JP2009149953A (en) * | 2007-12-21 | 2009-07-09 | National Institute Of Advanced Industrial & Technology | Method for manufacturing nitride semiconductor and nitride semiconductor device |
| JP2015160995A (en) * | 2014-02-27 | 2015-09-07 | シャープ株式会社 | METHOD FOR MANUFACTURING AlNO BUFFER LAYER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0172772B1 (en) | Method of forming ruo2 film of semiconductor equipment | |
| US4248688A (en) | Ion milling of thin metal films | |
| JPS634703B2 (en) | ||
| US5605724A (en) | Method of forming a metal conductor and diffusion layer | |
| US5350488A (en) | Process for etching high copper content aluminum films | |
| US6787861B2 (en) | Non-crystalline oxides for use in microelectronic, optical, and other applications | |
| JPH0258332A (en) | Method of passivating surface of compound semiconductor | |
| US6693345B2 (en) | Semiconductor wafer assemblies comprising photoresist over silicon nitride materials | |
| US4790920A (en) | Method for depositing an al2 O3 cap layer on an integrated circuit substrate | |
| JP2005340721A (en) | Method of depositing dielectric film having high dielectric constant | |
| JPH07326618A (en) | Wiring structure and its preparation | |
| JPH0499861A (en) | Formation of thin film | |
| US20190212656A1 (en) | PVD Films For EUV Lithography | |
| US10988838B2 (en) | Color film and method of forming the same | |
| KR20050103973A (en) | Hafnium alloy target and process for producing the same | |
| JPH05279846A (en) | Target for sputtering and formation of sputtered tion film | |
| JPS59168643A (en) | Compacting treatment method of oxide film | |
| JP3552238B2 (en) | Method of forming ohmic contact portion of LSI | |
| JPH06172989A (en) | Metal oxide film forming method | |
| JPH01234578A (en) | Dry etching method for thin copper film | |
| JP3288010B2 (en) | Method for forming metal wiring of semiconductor device | |
| JPS63132475A (en) | Thin film and manufacture thereof | |
| JPS641548B2 (en) | ||
| JPH0590264A (en) | Semiconductor device and manufacture thereof | |
| TW483941B (en) | Method for controlling thickness of titanium nitride film |