JPH0499280A - Device and method for producing thin film by cvd - Google Patents
Device and method for producing thin film by cvdInfo
- Publication number
- JPH0499280A JPH0499280A JP20983090A JP20983090A JPH0499280A JP H0499280 A JPH0499280 A JP H0499280A JP 20983090 A JP20983090 A JP 20983090A JP 20983090 A JP20983090 A JP 20983090A JP H0499280 A JPH0499280 A JP H0499280A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- cvd
- chamber
- substrate
- preheater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 4
- 150000002367 halogens Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はＣＶ Ｄ薄膜の製造方法及びその製造装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a CVD thin film and an apparatus for manufacturing the same.
［従来の技術］
従来のＣＶ Ｄ薄膜形成装置によるＣ Ｖ Ｄ薄膜の製
造方法は１例えば第３図に示すよう（二 Ｓ］基ｔｆｉ
３１を搬送用カセット３２から一旦予備排気室３３に搬
送し、予備排気室３３の圧力を下げ、処理室３４との圧
力が同しに成った後、Ｓｉ基桧３１を処理室３４に搬送
し、５ｉＨ−／Ｎ２０ガスによるプラズマＣＶ Ｄ薄膜
の形成等を行なっていた。[Prior Art] A method for manufacturing a CVD thin film using a conventional CVD thin film forming apparatus is as follows: (1) For example, as shown in FIG.
31 is once transported from the transport cassette 32 to the pre-evacuation chamber 33, the pressure in the pre-evacuation chamber 33 is lowered, and after the pressure becomes equal to that of the processing chamber 34, the Si substrate 31 is transported to the processing chamber 34. , 5iH-/N20 gas was used to form plasma CVD thin films.
［発明が解決しようとする課題］
しかしながら、従来技術では、予備排気室から処理室へ
搬送するまでの時間が短いために、保管中に吸湿した水
分を十分に除去することはできずＳ】基板の表面や下地
に残ってしまう。この水分は、下地と薄膜との富看性を
悪化させ薄膜の剥がれを生しさせる６また、下地の肋に
水分が残留した場合、膜の電気的リーク、化学的安定性
の点で品質を悪化させ、しばしば問題を生していた。[Problems to be Solved by the Invention] However, in the conventional technology, moisture absorbed during storage cannot be sufficiently removed due to the short time required to transport the substrate from the pre-evacuation chamber to the processing chamber. It remains on the surface or substrate. This moisture deteriorates the visibility between the substrate and the thin film, causing peeling of the thin film6.In addition, if moisture remains on the ribs of the substrate, the quality may be affected in terms of electrical leakage and chemical stability of the membrane. This often led to problems.
また、枚葉式ＣＶＤ薄膜形成装置においては、１枚当た
りの処理時間を短縮することが重要であり、処理室内で
の加熱処理等はスルーブツトを悪化させてしまう。Furthermore, in a single-wafer type CVD thin film forming apparatus, it is important to shorten the processing time per film, and heat treatment in the processing chamber deteriorates the throughput.
しかるに本発明は、かかる課題を解決するものであり、
その目的とするところは、薄膜形成前に予備排気室内で
水分除去を行なうことで、装置の処理能力を落とさずに
、下地及び形成する膜の品質を向上させるとともに、膜
のはがれを防止し、膜質の安定したＣＶＤ薄膜を提供す
ることである。However, the present invention solves these problems,
The purpose of this is to remove moisture in the pre-exhaust chamber before forming a thin film, thereby improving the quality of the base and the film to be formed without reducing the throughput of the equipment, and preventing peeling of the film. An object of the present invention is to provide a CVD thin film with stable film quality.
［課題を解決するための手段ｊ
本発明によるＣＶＤ薄膜の製造装置は、（１）予備排気
室に、予備加熱装置を備えている（２）請求項】記載の
予備加熱装置がハロゲンランプ等の光源からなる
（３）請求項１記載または、請求項２記載の予備加熱装
置によって、予備排気室の排気中に基板を加熱すること
を特徴とする。[Means for Solving the Problems J] The CVD thin film manufacturing apparatus according to the present invention comprises (1) a preheating device provided in the preliminary exhaust chamber; (3) The substrate is heated during evacuation of the pre-evacuation chamber by the pre-heating device according to claim 1 or 2, which comprises a light source.
また、本発明によるＣ″Ｖ Ｄ薄膜の製造方法は、請求
項ｌ記載、請求項２記載または、請求項３記載の製造装
置を用いていることを特徴とする。Further, the method for manufacturing a C''VD thin film according to the present invention is characterized in that the manufacturing apparatus according to claim 1, claim 2, or claim 3 is used.
［実 施 例１
以下本発明の実施例における製造方法を第１図基づいて
詳細に説明する。[Example 1] Hereinafter, a manufacturing method in an example of the present invention will be explained in detail based on FIG. 1.
まず、トランジスタや抵抗等の半導体素子及びアルミニ
ウム配線の形成された半導体基板１１を搬送用カセット
１２から予備排気室１３内の一時待磯ポジションに送る
。ここでは、全体の処理時間を短くするために複数枚の
半導体基板１１を予備排気室内に取り込んでいる。必要
数の半導体基板１１を取り込んだ後、ハロゲンランプ加
納による予備加熱装置１５に半導体基板を搬送し、約４
００℃に加熱すると同時に予備排気室の圧力を下げ、処
理室１４の圧力と一致させる。この後、処理室に半導体
基板を搬送し、温度４００℃、圧力５Ｔｏｒｒｒ、Ｓｉ
Ｈ４流量１５０ＳＣＭ、Ｎｚ０１５０ＳＣＣＩｖｌの条
件の下てＣＶＤ酸化シリコン膜を形成する。また、次に
処理すべき半導体基板は、予備加熱装置において加熱乾
燥される。ＣＶ Ｄ ｔｌｉの形成が終了した半導体基
板は予備排気室の待機ポジションに戻され、予備加熱装
置で待機していた半導体基板が処理室に送られる。First, the semiconductor substrate 11 on which semiconductor elements such as transistors and resistors and aluminum wiring are formed is sent from the transport cassette 12 to a temporary waiting position in the preliminary exhaust chamber 13. Here, a plurality of semiconductor substrates 11 are taken into the preliminary evacuation chamber in order to shorten the overall processing time. After taking in the required number of semiconductor substrates 11, the semiconductor substrates are transferred to a preheating device 15 using a halogen lamp, and heated for about 4 hours.
At the same time as heating to 00° C., the pressure in the pre-evacuation chamber is lowered to match the pressure in the processing chamber 14. After that, the semiconductor substrate is transferred to a processing chamber, and the temperature is 400°C, the pressure is 5 Torrr, and the Si
A CVD silicon oxide film is formed under the conditions of H4 flow rate of 150 SCM and Nz0150 SCCIvl. Further, the semiconductor substrate to be processed next is heated and dried in a preheating device. The semiconductor substrate on which CVD tli has been formed is returned to the standby position in the pre-evacuation chamber, and the semiconductor substrate that has been waiting in the pre-heating device is sent to the processing chamber.
このようにして製造されたＣＶＤ酸化シリコン膜は、下
地との密着性が向上し、膜の剥がれが減少した。また、
下地膜や形成された酸化シリコン膜中の水分が減少し、
膜のリーク電流等の電気特性の改善がみられ、半導体デ
バイスの特性が安定した。The CVD silicon oxide film produced in this manner had improved adhesion to the underlying layer and reduced peeling of the film. Also,
Moisture in the base film and formed silicon oxide film decreases,
Improvements were seen in electrical properties such as film leakage current, and the properties of semiconductor devices became stable.
ここでは、ＳｉＨ＜／Ｎ２０系の酸化シリコン膜を例に
とって説明したが、ＴＥ０１ ［Ｓｉ （ＯＣ２Ｈ，
） ４コ系の酸化シリコン膜やＳｉＨ４／Ｎ Ｈ３／
Ｎ ２系の窒什シリコン膜の形成においでも同様での効
果が認められた。Here, the explanation was given using a SiH</N20-based silicon oxide film as an example, but TE01 [Si (OC2H,
) 4-type silicon oxide film or SiH4/N H3/
A similar effect was observed in the formation of a N2-based silicon nitride film.
また、予備加熱温度は４００℃に設定しているが、これ
はＡＬ配線形成後のＣＶＤ薄膜形成工程を想定している
ためである。ここでは、ＣＶＤ膜形成工程で許容できる
最高温度以下の温度を設定可能であるが、短時間により
多くの水分を除去するには高い温度の方が好ましい。Further, the preheating temperature is set at 400° C., but this is because it is assumed that a CVD thin film forming process will be performed after the AL wiring is formed. Here, it is possible to set a temperature below the maximum allowable temperature in the CVD film forming process, but a higher temperature is preferable in order to remove more water in a shorter time.
予備加熱の方式については、ハロゲンランプ加熱方式を
例にとっているが、温度の応答性が良いためてあり、ヒ
ーター式でも処理時間の増加を除けは特に問題無く適応
できる。Regarding the preheating method, a halogen lamp heating method is taken as an example, but this is because it has good temperature responsiveness, and a heater method can also be applied without any particular problem except for an increase in processing time.
［発明の効果）
以上述べたように本発明によるＣ Ｖ Ｄ薄膜の製造方
法は、予備排気室内に予備加熱装置を備えこれを用いて
、排気時間中や待機時間中に基板を加熱することにより
、単位時間当りの処理枚数を減少する事なく、シかも下
地との密着性が高（水分の少ない高品質なＣＶＤ薄膜を
提供することが可能となる。[Effects of the Invention] As described above, the method for manufacturing a C VD thin film according to the present invention includes a preheating device in the pre-evacuation chamber, and uses this to heat the substrate during the evacuation time or standby time. This makes it possible to provide a high-quality CVD thin film with high adhesion to the substrate (low moisture content) without reducing the number of sheets processed per unit time.
第１図は１本発明によるＣＶＤ薄膜形成装置の断面図で
ある。第２図は、本発明によるＣＶＤ薄膜形成装置の各
部のタイミングチャートである。
第３図は、従来のＣＶＤ薄膜形成装置の断面図である。
１ ｌ 。
１２、
１４ 、
Ｉ ６、３６
１７、３７
半導体基板
搬送用カセット
・予備排気室
・処理室
予備加熱装置
・待機ポジション
搬送磯
出廓人
セイコーエプソン株式会社FIG. 1 is a sectional view of a CVD thin film forming apparatus according to the present invention. FIG. 2 is a timing chart of each part of the CVD thin film forming apparatus according to the present invention. FIG. 3 is a sectional view of a conventional CVD thin film forming apparatus. 1 l. 12, 14, I 6, 36 17, 37 Semiconductor substrate transport cassette/preparatory exhaust chamber/processing chamber preheating device/standby position transport Isode Kujin Seiko Epson Corporation
Claims (4)
徴とするＣＶＤ薄膜の製造装置。(1) A CVD thin film manufacturing apparatus characterized in that a preliminary exhaust chamber is equipped with a preliminary heating device.
の光源からなる事を特徴とするＣＶＤ薄膜の製造装置。(2) A CVD thin film manufacturing apparatus, wherein the preheating device according to claim 1 comprises a light source such as a halogen lamp.
置によって、予備排気室の排気中に基板を加熱すること
を特徴とするＣＶＤ薄膜の製造装置。(3) A CVD thin film manufacturing apparatus, characterized in that the substrate is heated by the preheating device according to claim 1 or claim 2 while the preliminary evacuation chamber is being evacuated.
載の製造装置を用いたＣＶＤ薄膜の製造方法。(4) A method for manufacturing a CVD thin film using the manufacturing apparatus according to claim 1, claim 2, or claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20983090A JPH0499280A (en) | 1990-08-08 | 1990-08-08 | Device and method for producing thin film by cvd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20983090A JPH0499280A (en) | 1990-08-08 | 1990-08-08 | Device and method for producing thin film by cvd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0499280A true JPH0499280A (en) | 1992-03-31 |
Family
ID=16579325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20983090A Pending JPH0499280A (en) | 1990-08-08 | 1990-08-08 | Device and method for producing thin film by cvd |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0499280A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007324293A (en) * | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | Dehydrating method and dehydrating apparatus, substrate processing method and substrate processing apparatus |
-
1990
- 1990-08-08 JP JP20983090A patent/JPH0499280A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007324293A (en) * | 2006-05-31 | 2007-12-13 | Tokyo Electron Ltd | Dehydrating method and dehydrating apparatus, substrate processing method and substrate processing apparatus |
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