JPH0498823A - Spin coating - Google Patents
Spin coatingInfo
- Publication number
- JPH0498823A JPH0498823A JP21622690A JP21622690A JPH0498823A JP H0498823 A JPH0498823 A JP H0498823A JP 21622690 A JP21622690 A JP 21622690A JP 21622690 A JP21622690 A JP 21622690A JP H0498823 A JPH0498823 A JP H0498823A
- Authority
- JP
- Japan
- Prior art keywords
- coating
- solvent
- spin
- chamber
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004528 spin coating Methods 0.000 title claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 68
- 239000002904 solvent Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000012298 atmosphere Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 31
- 238000001704 evaporation Methods 0.000 abstract description 10
- 230000008020 evaporation Effects 0.000 abstract description 10
- 238000009835 boiling Methods 0.000 abstract description 7
- 238000009987 spinning Methods 0.000 abstract 4
- 238000010422 painting Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- -1 SOC Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、例えば半導体装置の製造工程で用いられるフ
ォトレジスト、塗布ガラス材いわゆるSOC(スピン・
オン・グラス)、ポリイミド樹脂等の各回転塗布に適用
される回転塗布方法に係わる。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is applicable to photoresists used in the manufacturing process of semiconductor devices, for example, and coated glass materials so-called SOC (spin-on coating).
It relates to the spin coating method applied to various spin coatings such as on glass), polyimide resin, etc.
本発明は、基板上に、溶剤を含む塗布材を回転塗布する
回転塗布方法において、この塗布材の回転塗布を、この
塗布材中の溶剤と同一溶剤のガス雰囲気中で行うことに
より、塗布処理中での溶剤の蒸発に基く塗布むら等を回
避して、均質な塗膜形成を行うことができるようにする
。The present invention provides a spin coating method in which a coating material containing a solvent is spin-coated onto a substrate. To avoid uneven coating due to evaporation of a solvent in the coating, and to form a homogeneous coating film.
半導体装置の製造技術を始めとして各種装置の製造技術
にふいて例えばフォトレジス)SOG。SOG (for example, photoresist) applies to manufacturing technology of various devices including semiconductor device manufacturing technology.
ポリイミド樹脂等の回転塗布方法が多く用いられる。A spin coating method for polyimide resin and the like is often used.
例えばフォトレジスト材は、金属、半導体、絶縁体等の
各種材料へのパターニングにおいて、そのウェットエツ
チング、ドライエツチング等のエツチングレジスト、メ
ツキレジストなどの目的をもって塗布され、SOGやポ
リイミド樹脂は例えば半導体集積回路における多層配線
層間の層間絶縁層として、或いは各種半導体装置の表面
保護層として塗布され、更にこれらフォトレジスト、5
OG1ポリイミド樹脂等は下地凹凸面上に表面平坦化層
として広く用いられている。For example, photoresist materials are applied for the purpose of etching resists such as wet etching and dry etching, plating resists, etc. in patterning various materials such as metals, semiconductors, and insulators, and SOG and polyimide resins are used for patterning materials such as semiconductor integrated circuits. These photoresists,
OG1 polyimide resin and the like are widely used as a surface flattening layer on an uneven underlying surface.
これらフォトレジスト、SOC,ポリイミド樹脂等は、
その塗布材料中に溶剤例えばアルコール、セルソルブ系
溶剤を含み、これによって流動性、粘性等の調整がなさ
れて回転塗布によってむらのない均一な塗布がなされる
ようにしている。These photoresists, SOC, polyimide resins, etc.
The coating material contains a solvent such as an alcohol or a cellosolve solvent, thereby adjusting the fluidity, viscosity, etc., so that even and uniform coating can be achieved by spin coating.
ところが、この塗布材において、その回転塗布中におけ
る溶剤の蒸発によって配合が変化して所期の流動性、展
延性、粘性等が保持できないという問題があり、特に例
えば8インチ口径等の大口径の半導体ウェファ等の被塗
布基体への塗布においては、この配合の変化が塗りむら
となるのみならず、塗布雰囲気温度等の条件の変化の依
存性が大で再現性にも問題が生じて来る。具体的には低
沸点の溶剤、例えはメタノール(沸点〜64.7℃)が
多く含まれる場合は、塗布材の乾きが速いことから中心
部の塗布厚が大となる。However, with this coating material, there is a problem that the composition changes due to evaporation of the solvent during spin coating, making it impossible to maintain the desired fluidity, spreadability, viscosity, etc. When coating a substrate to be coated such as a semiconductor wafer, this change in formulation not only causes uneven coating, but also causes problems in reproducibility due to the large dependence on changes in coating conditions such as ambient temperature. Specifically, if a large amount of a low boiling point solvent, for example methanol (boiling point ~64.7° C.) is included, the coating material dries quickly, resulting in a large coating thickness at the center.
また回転塗布による場合、その回転塗布製蓋、すなわち
スピンコータのモータの性能によって塗布材料面が波を
打ち、形成された塗布表面が波面形状になるという問題
がある。このような波面形状の発生を抑制する方法とし
ては、例えば有機系SOG材による場合は、3.000
〜4.0OOr、 p、 m、 テ15秒間程度の回転
を行って後回転を止めて放置してその流動性によって表
面をなだらかに、すなわち平坦化し、その後に、熱処理
を行うという方法も考えられているが、この方法は低沸
点ないしは揮発性の溶剤が用いられる塗布材への適用が
困難であるという問題がある。Further, in the case of spin coating, there is a problem in that the surface of the coating material is undulated due to the performance of the spin coating lid, that is, the motor of the spin coater, and the formed coating surface has a wavy shape. As a method of suppressing the occurrence of such a wavefront shape, for example, when using an organic SOG material, 3.000
~ 4.0OOr, p, m, Te It is also possible to rotate for about 15 seconds, then stop the rotation and leave it to use its fluidity to smooth the surface, that is, flatten it, and then perform heat treatment. However, this method has a problem in that it is difficult to apply to coating materials that use low boiling point or volatile solvents.
本発明は、上述した塗布材の回転塗布方法における塗布
材中における溶剤の蒸発に基づく配合の変動による塗り
むら、再現性の低下等の解決をはかることを目的とする
。An object of the present invention is to solve problems such as uneven coating and decreased reproducibility due to variations in the composition due to evaporation of the solvent in the coating material in the above-mentioned spin coating method of the coating material.
本発明は、基板上に、溶剤を含む塗布材を回転塗布する
回転塗布方法において、その塗布材の回転塗布を、溶剤
のガス雰囲気中で行う。The present invention is a spin-coating method for spin-coating a coating material containing a solvent onto a substrate, in which the coating material is spin-coated in a solvent gas atmosphere.
上述したように本発明においては、その塗布材の回転塗
布を溶剤のガス雰囲気中で行うようにしたことによって
溶剤の蒸発が抑制される。したがって温度等の外囲条件
に敏感に影響されることなく安定に回転塗布の開始初期
から終了時点まで一定に保持して初期の配合を保持する
ことができるようにし、均一な回転塗布、したがって例
えばその表面平坦化を確実にかつ再現性よく得ることが
できる。As described above, in the present invention, the evaporation of the solvent is suppressed by performing spin coating of the coating material in a solvent gas atmosphere. Therefore, it is possible to stably maintain the initial formulation from the beginning of spin coating to the end without being sensitively affected by surrounding conditions such as temperature, and to achieve uniform spin coating, for example. The surface flattening can be achieved reliably and with good reproducibility.
本発明による回転塗布方法の実施例をその方法を実施す
る袋壁と共に説明する。第1図は本発明方法を実施する
装朦の構成図を示し、この例においては被塗布基板(1
)例えば半導体ウェファが多数収容されたカセット(2
)が配置されるローグー室〔3)と、これよりの被塗布
基板(1)を枚葉式に順次取出して後述する回転塗布室
(4)に導入する導入室(5)と、被塗布基板(1)上
に目的とする塗布材を回転塗布する回転塗布室(5)と
、この回転塗布室(5)において塗布材が塗布された被
塗布基板(1)を例えば他部に送り出す送り出し室(6
)と、その後段に加熱室〔7)、さらにその後段に再び
所要のカセット(2)に被塗布基板(1)を収容配置す
るアンローダ室(8)とが開閉扉(9ンを介して順次配
蓋された構成となし得る。An embodiment of the spin coating method according to the invention will be described along with a bag wall on which the method is implemented. FIG. 1 shows a configuration diagram of an arrangement for carrying out the method of the present invention, and in this example, a substrate to be coated (1
) For example, a cassette containing a large number of semiconductor wafers (2
) is placed, an introduction chamber (5) from which substrates to be coated (1) are sequentially taken out in a single wafer manner and introduced into a rotary coating chamber (4) to be described later, and a substrate to be coated. (1) A spin-coating chamber (5) for spin-coating a target coating material thereon, and a delivery chamber for sending out the coated substrate (1) coated with the coating material in this spin-coating chamber (5) to another part, for example. (6
), followed by a heating chamber [7], and further followed by an unloader chamber (8) in which the substrates to be coated (1) are housed and placed in the required cassettes (2), which are opened and closed sequentially through an opening/closing door (9). Can be configured with a closed lid.
回転塗布室(4)は、所要の加熱を施す加熱手段例えば
ヒータ(10)を具備し、この塗布室(4)内には例え
ば′!J2図にその路線的断面図を示すように、被塗布
基板(1)を配置してこれをその面内において例えばそ
の基板(1)中心を中心として回転する回転台(11)
が配置され、この回転台(11)の上方すなむちこの回
転台(11)上に載置された被塗布基板(1ン上のほぼ
中心部に目的とする塗布材を滴下する滴下ノズル(12
)が開放され、その外端が図示しないが塗布材供給源に
連結された塗布材導入管(13)が配置される。また、
この回転塗布室(4)には排気口(14)が設けられる
。この排気口(14)は真空ポンプ等の排気手段に連結
される。さらに、またこの回転塗布室(4)には塗布材
に用いられる溶剤のガスを導入する溶剤ガス導入口(1
5〉が設けられてなる。The rotary coating chamber (4) is equipped with heating means, such as a heater (10), for applying the required heating, and the coating chamber (4) is equipped with, for example, '!'! As shown in Fig. J2, the substrate to be coated (1) is placed on a rotary table (11) that rotates the substrate (1) within its plane, for example, around the center of the substrate (1).
is placed above the rotating table (11), and a dripping nozzle (1) for dropping the target coating material onto approximately the center of the substrate to be coated (1) placed on the rotating table (11). 12
) is opened, and a coating material introduction pipe (13) whose outer end is connected to a coating material supply source (not shown) is arranged. Also,
This rotary coating chamber (4) is provided with an exhaust port (14). This exhaust port (14) is connected to exhaust means such as a vacuum pump. Furthermore, this rotary coating chamber (4) also has a solvent gas inlet (1) for introducing a solvent gas used in the coating material.
5> is provided.
この構成において、先ず被塗布基板(1)例えば半導体
ウェファが収容されたカセット(2)をローグー室(3
)に持ち来す。一方、導入室(5)には例えば真空ポン
プに連結された排気口(16)が設けられ、送り出し室
(6)には、所要のガスが導入されるガス導入口(17
)が設けられる。In this configuration, first, a cassette (2) containing a substrate to be coated (1), for example, a semiconductor wafer, is placed in a low goo chamber (3).
). On the other hand, the introduction chamber (5) is provided with an exhaust port (16) connected to a vacuum pump, for example, and the delivery chamber (6) is provided with a gas introduction port (17) through which the required gas is introduced.
) is provided.
そして、排気のなされた導入室(5)にローダ−(3)
のカセット(2)から枚葉的に被塗布基板〔1)例えば
半導体ウェファを取出して導入する。そして、この導入
室(5)から回転塗布室(4)の回転台(11)上に被
塗布基板(1)を持ち来し、これを回転台(11)上に
固定する。回転塗布室(4)は、−旦排気がなされて例
えはSOGの塗布にふいては例えば40〜100Pa
(パスカル)程度にし、ここで溶剤ガスをその導入口(
15)から回転塗布室(4)内に導入し、回転塗布室(
4)内を溶剤ガス雰囲気とする。このようにして溶剤の
蒸発が抑制できる状態下で、ノズル(12)から塗布剤
を被塗布基板(1)上に滴下し、その後回転台(11)
を例えば6000r、 p、 rn、下で5〜60秒間
回転させて回転塗布を行う。その後、約1〜2分間程度
放萱し表面の波打ち形状ならびに基板全面のむらをなら
し、表面を均一化した後再び回転塗布室(4)内を排気
する。そして、加熱手段(10)によって比較的低温の
200℃以下で加熱し、塗布膜中の溶剤を蒸発させる。Then, the loader (3) is placed in the exhaust introduction chamber (5).
A substrate to be coated (1), for example, a semiconductor wafer, is taken out and introduced one by one from the cassette (2). Then, the substrate to be coated (1) is brought from the introduction chamber (5) onto the rotary table (11) of the rotary coating chamber (4), and is fixed on the rotary table (11). The rotary coating chamber (4) is first evacuated and the pressure is set at 40 to 100 Pa, for example, when wiping the SOG coating.
(Pascal) and then inject the solvent gas into its inlet (
15) into the rotary coating chamber (4), and the rotary coating chamber (
4) Create a solvent gas atmosphere inside. In this way, under conditions where the evaporation of the solvent can be suppressed, the coating agent is dropped from the nozzle (12) onto the substrate to be coated (1), and then the rotating table (11)
For example, spin coating is performed by rotating the coating at 6000 r, p, rn for 5 to 60 seconds. Thereafter, the coating is left for about 1 to 2 minutes to smooth out the wavy shape on the surface and the unevenness of the entire surface of the substrate, and after making the surface uniform, the inside of the spin coating chamber (4) is evacuated again. Then, the coating is heated by a heating means (10) at a relatively low temperature of 200° C. or lower to evaporate the solvent in the coating film.
このとき、塗布膜の低沸点溶剤から乾燥が始まるが、そ
の乾燥はすでに全面的に塗布されて後の蒸発であること
から、この溶剤の蒸発による塗布膜の膜軍変動すなわち
塗りむらの影響は回避される。その後、送り出し室(6
〕に被塗布基板(1〕を導出し、ここにおいて導入口(
17)から例えばN2不活性ガスを導入して大気圧化と
した後加熱室(7)に持ち来す。加熱室(7)内は例え
ばN、不活性ガス雰囲気とされ、例えば複数段のホット
プレートA、B及びCを有し、第1のホットプレートA
において例えば10秒間100℃、第2のホットプレー
)Bにおいて10秒間290℃、第3のホットプレート
Cにおいて60秒間400℃の加熱を行う。その後、ア
ンローダ室(8)に被塗布基板(1]が順次持来されて
カセット(2)に収容され、これが他部に搬出される。At this time, drying starts from the low-boiling point solvent of the coating film, but since this drying occurs after the coating has already been applied to the entire surface, it evaporates, so the effect of film density fluctuations, that is, uneven coating, on the coating film due to the evaporation of the solvent is small. Avoided. After that, the sending room (6
], the substrate to be coated (1) is led out, and here the introduction port (
For example, N2 inert gas is introduced from 17) to bring the pressure to atmospheric pressure, and then the mixture is brought to the heating chamber (7). The inside of the heating chamber (7) is set to an atmosphere of, for example, N or an inert gas, and has, for example, a plurality of hot plates A, B, and C, with a first hot plate A
For example, heating is performed at 100° C. for 10 seconds in the second hot plate), 290° C. for 10 seconds in the second hot plate B, and 400° C. for 60 seconds in the third hot plate C. Thereafter, the substrates to be coated (1) are sequentially brought to the unloader chamber (8) and housed in a cassette (2), which is then carried out to another section.
尚、上述した回転塗布を実施する装置としては、上述し
た例に限らず種々の変形変更をなし得るものであり、例
えば加熱室(7)の加熱手段としてはホットプレートに
限らず電気炉あるいはトンネル炉等によって形成するこ
とができ、またこの加熱室(7)は送り出し室(6)と
兼用にすることもできるし、成る場合は導入室(5)を
省略することもできるなど種々の構成を採り得る。Note that the apparatus for carrying out the above-mentioned spin coating is not limited to the above-mentioned example, and can be modified in various ways. For example, the heating means for the heating chamber (7) is not limited to a hot plate, but may also be an electric furnace or a tunnel. The heating chamber (7) can be formed by a furnace, etc., and the heating chamber (7) can also be used as the delivery chamber (6), or if it is, the introduction chamber (5) can be omitted. It can be harvested.
また、上述した各基板(1)の移行、取り扱いはロボッ
トによる自動化によって行うことができる。Moreover, the transfer and handling of each of the substrates (1) described above can be performed automatically by a robot.
上述したように本発明においては、塗布材の回転塗布に
おいてその回転塗布を溶剤ガス雰囲気中で行うようにし
たので、低沸点すなわち乾燥しやすい溶剤を含む塗布材
といえどもその溶剤の蒸発を抑制することができるので
塗りむらがなくしかも再現性よく塗布材の回転塗布を行
うことができる。As mentioned above, in the present invention, the spin coating of the coating material is performed in a solvent gas atmosphere, so even if the coating material contains a low boiling point, that is, a solvent that is easy to dry, the evaporation of the solvent is suppressed. Therefore, the coating material can be spin coated without uneven coating and with good reproducibility.
例えば第3図に示すように、被塗布基板(1)の塗布膜
形成の下地となる表面に電極、配線等の凹凸パターン(
18)が存在する場合、同図中鎖lIaにその表面状態
を示すように厚みむらが存在したものが、本発明方法で
は実線図示のようになだらかな平坦面を形成することが
できる。For example, as shown in FIG. 3, a concavo-convex pattern of electrodes, wiring, etc.
18), the method of the present invention can form a smooth flat surface as shown by the solid line, even though the surface state of the chain lIa in the figure is uneven, as shown in the figure.
また全体的に回転塗布がなされて後溶剤を全面的に飛ば
すようにすることによって優れた安定した膜質を有する
塗布膜を形成することができる。Moreover, by performing spin coating on the entire surface and spraying off the solvent over the entire surface, a coating film having excellent and stable film quality can be formed.
また塗布中における塗布材中の低沸点溶剤の蒸発が抑制
されることから、配合変化による上述したような厚みむ
らの伺避と共にその塗布材が不本意に乾燥することによ
って塗布膜の焼成前において、静止状態を保持して波面
を消失させる効果を阻害したり、更に焼成前においてそ
の塗布膜中の塗布材料が粉末化してダスト発生の原因と
なる不都合が回避されるのでこれによる例えば半導体ウ
ェファ上の半導体素子の特性変化あるいはその後の半導
体装置等の製造工程における製造装萱の汚染等を回避で
きるなど均一で、再現性良く安定した塗布膜の形成を行
うことができる。In addition, since the evaporation of the low boiling point solvent in the coating material during coating is suppressed, the above-mentioned uneven thickness due to composition changes is avoided, and the coating material is involuntarily dried, so that the coating material is not dried before the coating film is baked. This prevents the inconvenience of inhibiting the effect of keeping the stationary state and eliminating the wavefront, and furthermore, that the coating material in the coating film turns into powder before baking, which causes dust generation. It is possible to form a uniform and stable coating film with good reproducibility, such as avoiding changes in the characteristics of semiconductor elements or contamination of manufacturing equipment in the subsequent manufacturing process of semiconductor devices, etc.
第1図は本発明方法を実施する装置の一例の路線的構成
図、第2図はその回転塗布室の路線的断面図、第3図は
塗布状態を示す断面図である。
(1)は被塗布基板、(4)は回転塗布室、(11)i
2回転台、(14)は排気口、(15)は溶剤力゛ス導
入口、(12)は溶剤滴下ノズルを有する供給管である
。
代
理
人
松
隈
秀
盛FIG. 1 is a linear configuration diagram of an example of an apparatus for carrying out the method of the present invention, FIG. 2 is a linear sectional view of the rotary coating chamber thereof, and FIG. 3 is a sectional view showing the coating state. (1) is the substrate to be coated, (4) is the rotating coating chamber, (11) i
2 rotary tables, (14) an exhaust port, (15) a solvent power inlet, and (12) a supply pipe having a solvent dripping nozzle. Agent Hidemori Matsukuma
Claims (1)
法において、 上記塗布材の回転塗布を、上記溶剤のガス雰囲気中で行
うことを特徴とする回転塗布方法。[Scope of Claims] A spin coating method for spin coating a coating material containing a solvent onto a substrate, characterized in that the spin coating of the coating material is performed in a gas atmosphere of the solvent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2216226A JP3067177B2 (en) | 1990-08-16 | 1990-08-16 | Rotary coating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2216226A JP3067177B2 (en) | 1990-08-16 | 1990-08-16 | Rotary coating device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0498823A true JPH0498823A (en) | 1992-03-31 |
JP3067177B2 JP3067177B2 (en) | 2000-07-17 |
Family
ID=16685256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2216226A Expired - Fee Related JP3067177B2 (en) | 1990-08-16 | 1990-08-16 | Rotary coating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3067177B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033728A (en) * | 1993-05-13 | 2000-03-07 | Fujitsu Limited | Apparatus for spin coating, a method for spin coating and a method for manufacturing semiconductor device |
-
1990
- 1990-08-16 JP JP2216226A patent/JP3067177B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033728A (en) * | 1993-05-13 | 2000-03-07 | Fujitsu Limited | Apparatus for spin coating, a method for spin coating and a method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP3067177B2 (en) | 2000-07-17 |
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