JPH0493677A - Secondary electron guide - Google Patents
Secondary electron guideInfo
- Publication number
- JPH0493677A JPH0493677A JP2207143A JP20714390A JPH0493677A JP H0493677 A JPH0493677 A JP H0493677A JP 2207143 A JP2207143 A JP 2207143A JP 20714390 A JP20714390 A JP 20714390A JP H0493677 A JPH0493677 A JP H0493677A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- detector
- secondary electron
- conductors
- annular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004020 conductor Substances 0.000 claims abstract description 58
- 238000010894 electron beam technology Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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- Tests Of Electronic Circuits (AREA)
Abstract
Description
ＥｔＩ＆要】
試料に電子ビームを照射し照射点から放出された２次電
子を検出器側に案内する２次電子案内装置に関し、
エネルギー分析グリッドを通過した検出すべき２次電子
をできるだ）ｊ検出器１：導くことを目的とし、
対物レンズと該対物レンズの上方のリフレクタ電極との
間に配置された検出器で該２次電子を検出する電子ビー
ム装置に用いられ、該検出器付近と該リフレクタ電極と
の間に、下方の環状導体の周囲長の方が上方の環状導体
の周囲長よりも長い複数の該環状導体を、該１次電子ビ
ームを囲むように配置し、下方の該環状導体の電位が上
方の該溝状導体の電位よりも高くなるように該環状導体
に電圧を印加して、該検出器側に該２次電子を案内する
ように構成する。Regarding the secondary electron guide device that irradiates the sample with an electron beam and guides the secondary electrons emitted from the irradiation point to the detector side, it is possible to detect the secondary electrons that have passed through the energy analysis grid) Detector 1: Used in an electron beam device that detects secondary electrons with a detector placed between an objective lens and a reflector electrode above the objective lens. A plurality of annular conductors are arranged between the reflector electrode and the lower annular conductor, the circumferential length of which is longer than that of the upper annular conductor, so as to surround the primary electron beam. A voltage is applied to the annular conductor so that the potential of the annular conductor is higher than the potential of the groove-shaped conductor above, and the secondary electrons are guided to the detector side.
本発明は、試料に電子ビームを照射し照射点から放出さ
れた２次電子を検出する電子ビームテスタ等の電子ビー
ム装置に用いられ、２次電子を検出器に案内する２次電
子案内装置に関する。
照射される。照射点からは、照射点の電位に応じたエネ
ルギー分布を有する２次電子が放出される。
この２次電子は、上方のメツシュ状の引出グリッド１８
及びエネルギー分析グリッド２０を通り、リフレクタ電
極２２で下方に力を受け、かつコレクタ電極２４側に力
を受け、コレクタ電極２４内に配置された２次電子検出
器２６で検出される。
エネルギー分析グリッド２０を通過できる２次電子の量
は、電子ビーム照射点の電位及びエネルギ分析グリッド
２０に印加する電圧に応じて変化し、エネルギー分析グ
リッド２０に印加する電圧を変 化させたときの２次電
子検出量の変化から、試料１６上の電子ビーム照射点の
電位を検出することができる。The present invention relates to a secondary electron guide device that is used in an electron beam device such as an electron beam tester that irradiates a sample with an electron beam and detects secondary electrons emitted from an irradiation point, and that guides the secondary electrons to a detector. . irradiated. Secondary electrons having an energy distribution depending on the potential of the irradiation point are emitted from the irradiation point. These secondary electrons are transferred to the upper mesh-like extraction grid 18.
The electrons pass through the energy analysis grid 20, receive a downward force at the reflector electrode 22, and receive a force at the collector electrode 24 side, and are detected by the secondary electron detector 26 disposed within the collector electrode 24. The amount of secondary electrons that can pass through the energy analysis grid 20 changes depending on the potential of the electron beam irradiation point and the voltage applied to the energy analysis grid 20. The potential of the electron beam irradiation point on the sample 16 can be detected from the change in the detected amount of secondary electrons.
第３図は従来の電子ビーム装置の要部を示す。
電子銃から射出された１次電子ビーム１０は、Ｆｉｌ状
の１次電子シールド電極１２を通り、対物レンズ１４の
作る磁界で収束されて試料１６上にFIG. 3 shows the main parts of a conventional electron beam device. A primary electron beam 10 emitted from an electron gun passes through a film-shaped primary electron shield electrode 12, is focused by a magnetic field created by an objective lens 14, and is focused onto a sample 16.
しかし、エネルギー分析グリッド２０を通過した２次電
子の一部は、第３図に示す如く、コレクタ電極２４に当
たってコレクタ電極２４に吸収されたり、また、第４図
に示す如く、リフレクタ電極２２が作る電界により下方
に押し戻されたりする。このた約、検出すべき２次電子
が２次電子検出器２６で検出されず、電位測定誤差の原
因となっていた。
本発明の目的は、このような問題点に鑑み、エネルギー
分析グリッドを通過した検出すべき２次電子をできるだ
け２次電子検出器側に導くことができる２次電子案内装
置を提供することにある。However, as shown in FIG. 3, some of the secondary electrons that have passed through the energy analysis grid 20 hit the collector electrode 24 and are absorbed by the collector electrode 24, or as shown in FIG. It is pushed back downward by the electric field. Due to this limitation, the secondary electrons that should be detected are not detected by the secondary electron detector 26, causing potential measurement errors. In view of such problems, an object of the present invention is to provide a secondary electron guide device that can guide the secondary electrons to be detected that have passed through the energy analysis grid as far as possible to the secondary electron detector side. .
【課題を解決するための手段及びその作用】本発明に係
る２次電子案内装置を、実施例図面第１図及び第２図を
参照して説明する。
この２次電子案内装置は、電子ビームテスタ等の電子ビ
ーム装置に用いられる。
電子ビーム装置は、試料１６に１次電子ビーム１０を照
射し、照射点から放出された２次電子を、対物レンズ１
４＆、対物レンズ１４の上方のりコレクタ電極２２との
間に配置された検出器２６で検出する。
２次電子案内装置は、検出器２６付近きりコレクタ電極
２２との間に、下方の環状導体の周囲長の方が上方の環
状導体の周囲長よりも長い複数の該環状導体２８１〜２
８４を、１次電子ビーム１０を囲むように配置し、下方
の環状導体の電位が上方の環状導体の電位よりも高くな
るように環状導体２８１〜２８４に電圧を印加する構成
となっている。
本発明によれば、複数の環状導体２８１〜２８４が作る
電界により、エネルギー分析グリッド２０を通過した検
出すべき２次電子を検出器側に導くことができ、電子ビ
ーム装置の測定精度が向上する。
上記構成において、隣合う環状導体２８１〜２８４間を
高抵抗の線状物３０１〜３０４で連結し、上方端の環状
導体２８１と下方端の環状導体２８４との間に電圧を印
加すれば、環状導体２８１〜２８４の各々に対し別個の
電源電圧を印加する必要がなくかつ現状導体２８１〜２
８４が互いに支持されるので、構成が簡単になる。
また、環状導体２８１〜２８４を、互いに隣合う検出器
２４の間に向いて突出した形状にすれば、検出器２４間
を通る２次電子に対しても検出器２６側に案内すること
ができるので、電子ビーム装置の測定精度がさらに向上
する。[Means for Solving the Problems and Their Effects] A secondary electronic guide device according to the present invention will be explained with reference to FIGS. 1 and 2 of the embodiment drawings. This secondary electron guide device is used in an electron beam device such as an electron beam tester. The electron beam device irradiates a sample 16 with a primary electron beam 10 and directs the secondary electrons emitted from the irradiation point through an objective lens 1.
4 & is detected by a detector 26 disposed between the objective lens 14 and the collector electrode 22 above. The secondary electron guide device includes a plurality of annular conductors 281 to 2, the lower annular conductor having a longer circumference than the upper annular conductor, between the collector electrode 22 and the detector 26.
84 are arranged to surround the primary electron beam 10, and a voltage is applied to the annular conductors 281 to 284 so that the potential of the lower annular conductor is higher than the potential of the upper annular conductor. According to the present invention, the electric field created by the plurality of annular conductors 281 to 284 can guide the secondary electrons to be detected that have passed through the energy analysis grid 20 to the detector side, improving the measurement accuracy of the electron beam device. . In the above configuration, if adjacent annular conductors 281 to 284 are connected by high-resistance linear objects 301 to 304 and a voltage is applied between the annular conductor 281 at the upper end and the annular conductor 284 at the lower end, the annular conductors 281 to 284 can be connected. There is no need to apply a separate power supply voltage to each of the conductors 281-284, and the current conductors 281-2
84 are mutually supported, which simplifies the construction. Further, if the annular conductors 281 to 284 are shaped to protrude between the adjacent detectors 24, it is possible to guide the secondary electrons passing between the detectors 24 to the detector 26 side. Therefore, the measurement accuracy of the electron beam device is further improved.
以下、図面に基づいて本発明が適用された電子ビーム装
置の一実施例を説明する。
第１図は電子ビーム装置の要部を示す。第３図と同一構
成要素には同一符号を付してその説明を省略する。
通常、１次電子シールド電極１２は接地され、リフレク
タ電極２２にはマイナス数百Ｖの電圧が印加され、コレ
クタ電極２４には数十Ｖ〜数百■の電圧が印加され、２
次電子検出器２６には数ｋＶの電圧が印加される。
リフレクタ電極２２と２次電子検出器２６付近との間に
は、１次電子ビーム１０を中心として環状導体２８１〜
２８４が配置されている。一番上の環状導体２８１は１
次電子シールド電極１２寄りに配置され、一番下の環状
導体２８４は２次電子検出器２６寄りに配置されている
。また、環状導体２８１〜２８４の各周囲長は、環状導
体２８１が最も短く、環状導体２８２．２８３．２８４
と下方にいくほど長くなっている。環状導体２８１〜２
８４は互いに略相似形であり、四角形の隅部を丸袷で外
側に突出させた形状となっている。
各突出部は、隣合うコレクタ電極２４の間に向いている
。
溝状導体２８１〜２８４は、これら突出部において、高
抵抗ブリッジ３０１〜３０４で互いに連結されている。
高抵抗ブリッジ３０１〜３０４の上端部は、１次電子シ
ールド電極１２の下端部に連結支持されている。また、
２次電子検出器２６寄りの環状導体２８４は、高抵抗ブ
リッジ３０５〜３１２でコレクタ電極２４に連結支持さ
れている。高抵抗ブリッジ３０１〜３１′２は、例えば
合成樹脂製の線状物の表面に高抵抗膜が被着されて構成
されている。
したがって、環状導体２８ｉ（ｉ＝１〜４〉の電位をｖ
ｌとし、コレクタ電極２４の電位をｖｃとスルト、Ｄ＜
Ｖｌ＜Ｖ、＜Ｖ３＜Ｖ４ ＜Ｖｃとなる。また、ブリッ
ジ３０１〜３１２は高抵抗であるので、１次電子シール
ド電極１２とコレクタ電極２４との間には殆ど電流が流
れない。
上記構成において、１次電子ビーム１０を試料１６上に
照射すると、１次電子ビーム１０のエネルギーを貰った
２−次電子は、引出グリッド１８で引き上げられる。こ
の２次電子は、照射点の電位に応じたエネルギー分布を
有しており、エネルギー分析グリッド２０に印加された
電圧に応じてその一部がエネルギー分析グリッド２０を
通る。エネルギー分析グリッド２０を通った２次電子は
、リフレクタ電極２２で下方に力を受けかつコレクタ電
極２４で２次電子検出器２６側に力を受け、さらに、環
状導体２８１〜２８４で形成された電界により、２次電
子検出器２６側に案内されて、２次電子検出器２６で検
出される。
したがって、第３図に示すようにコレクタ電極２４に当
たって吸収されたり、第４図に示すようにリフレクタ電
極２２で下方に押し戻されたりして、２次電子検出器２
６に捕捉されない検出すべき２次電子の量を従来よりも
少なくすることができる。このだぬ、より正確に照射点
の電位を測定することができる。
なお、本発明には外にも種々の変形例が含まれる
例えば、上記実施例では、１次電子シールド電極１２と
コレクタ電極２４とに印加された電圧を利用して、２次
電子案内装置に新たな電源電圧を印加する必要をなくし
たが、本発明は、環状導体２８１と２８４とに又は環状
導体２８１〜２８４の各々に、別個の電源電圧を印加す
る構成であってもよい。
【発明の効果］
以上説明した如く、本発明に係る２次電子案内装置によ
れば、複数の溝状導体が作る電界により、エネルギー分
析グリッドを通過した検出すべき２次電子を検出器側に
導くことができるという効果を奏し、電子ビーム装置の
測定精度向上に寄与するところが大きい。
また、隣合う環状導体間を高抵抗の線状物で連結し、上
方端の環状導体と下方端の溝状導体との間に電圧を印加
すれば、環状導体の各々に対し別個の電源電圧を印加す
る必要がなくかつ環状導体が互いに支持されるので、構
成が簡単になるという効果を奏する。
また、環状導体を、互いに隣合う検出器の間に向いて突
出した形状にすれば、検出器間を通る２次電子に対して
も検出器側に案内することができるので、電子ビーム装
置の測定精度がさらに向上するという効果を奏する。An embodiment of an electron beam apparatus to which the present invention is applied will be described below based on the drawings. FIG. 1 shows the main parts of an electron beam device. Components that are the same as those in FIG. 3 are given the same reference numerals and their explanations will be omitted. Normally, the primary electron shield electrode 12 is grounded, the reflector electrode 22 is applied with a negative voltage of several hundred volts, the collector electrode 24 is applied with a voltage of several tens of volts to several hundreds of volts,
A voltage of several kV is applied to the secondary electron detector 26. Between the reflector electrode 22 and the vicinity of the secondary electron detector 26, annular conductors 281 to 281 are arranged around the primary electron beam 10.
284 are arranged. The top ring conductor 281 is 1
The lowermost annular conductor 284 is arranged closer to the secondary electron shield electrode 12, and the lowermost annular conductor 284 is arranged closer to the secondary electron detector 26. Further, regarding the respective circumferential lengths of the annular conductors 281 to 284, the annular conductor 281 is the shortest, the annular conductor 282, 283, 284
It becomes longer as it goes downward. Annular conductor 281-2
The shapes 84 are substantially similar to each other, and the corners of the rectangle are rounded and protrude outward. Each protrusion is oriented between adjacent collector electrodes 24 . The groove-shaped conductors 281-284 are connected to each other by high-resistance bridges 301-304 at these protrusions. The upper ends of the high resistance bridges 301 to 304 are connected and supported by the lower end of the primary electron shield electrode 12. Also,
An annular conductor 284 near the secondary electron detector 26 is connected and supported to the collector electrode 24 by high resistance bridges 305 to 312. The high-resistance bridges 301 to 31'2 are constructed by coating a high-resistance film on the surface of a linear object made of, for example, synthetic resin. Therefore, the potential of the annular conductor 28i (i=1 to 4) is set to v
l, the potential of the collector electrode 24 is vc and sult, D<
Vl<V, <V3<V4 <Vc. Further, since the bridges 301 to 312 have high resistance, almost no current flows between the primary electron shield electrode 12 and the collector electrode 24. In the above configuration, when the sample 16 is irradiated with the primary electron beam 10, the secondary electrons that have received the energy of the primary electron beam 10 are pulled up by the extraction grid 18. These secondary electrons have an energy distribution depending on the potential of the irradiation point, and a portion of them passes through the energy analysis grid 20 depending on the voltage applied to the energy analysis grid 20. The secondary electrons that have passed through the energy analysis grid 20 receive a downward force from the reflector electrode 22 and a force from the collector electrode 24 toward the secondary electron detector 26 side, and are further subjected to an electric field formed by the annular conductors 281 to 284. As a result, the electrons are guided to the secondary electron detector 26 side and detected by the secondary electron detector 26. Therefore, the secondary electrons are absorbed by the collector electrode 24 as shown in FIG. 3, or are pushed back downward by the reflector electrode 22 as shown in FIG.
The amount of secondary electrons to be detected that are not captured by the electron beam 6 can be reduced compared to the conventional method. This dog allows for more accurate measurement of the potential at the irradiation point. Note that the present invention includes various modifications. For example, in the above embodiment, the voltage applied to the primary electron shield electrode 12 and the collector electrode 24 is used to control the secondary electron guide device. Although it is not necessary to apply a new power supply voltage, the present invention may be configured to apply a separate power supply voltage to the annular conductors 281 and 284 or to each of the annular conductors 281 to 284. Effects of the Invention As explained above, according to the secondary electron guiding device according to the present invention, the electric field created by the plurality of groove-shaped conductors directs the secondary electrons to be detected that have passed through the energy analysis grid toward the detector side. This greatly contributes to improving the measurement accuracy of electron beam devices. In addition, if adjacent annular conductors are connected with a high-resistance wire and a voltage is applied between the annular conductor at the upper end and the groove-shaped conductor at the lower end, separate power supply voltages can be applied to each of the annular conductors. Since there is no need to apply , and the annular conductors are mutually supported, the structure is simplified. In addition, if the annular conductor is shaped to protrude between adjacent detectors, it is possible to guide secondary electrons passing between the detectors toward the detector. This has the effect of further improving measurement accuracy.
第１図及び第２図は本発明に係る２次電子案内装置の一
実施例に係り、
第１図は２次電子案内装置が適用された電子ビーム装置
の要部概略図、
第２図はこの２次電子案内装置の斜視図である。
第３図及び第４図は従来の問題点を説明するだめの電子
ビーム装置の要部概略図である。
図中、
１０は１次電子ビーム
１２は１次電子シールド電極
１４は対物レンズ
１６は試料
１８は引出グリッド
２０はエネルギー分析グリッド
２２はリフレクタ電極
２４はコレクタ電極
２６は２次電子検出器
２８１〜２８４は環状導体
３０１〜３１２は高抵抗ブリッ
第１図1 and 2 relate to an embodiment of the secondary electron guide device according to the present invention, FIG. 1 is a schematic diagram of the main part of an electron beam device to which the secondary electron guide device is applied, and FIG. 2 is a FIG. 3 is a perspective view of this secondary electron guide device. FIGS. 3 and 4 are schematic diagrams of main parts of an electron beam device for explaining the problems of the conventional technique. In the figure, 10 is a primary electron beam 12 is a primary electron shield electrode 14 is an objective lens 16 is a sample 18 is an extraction grid 20 is an energy analysis grid 22 is a reflector electrode 24 is a collector electrode 26 is a secondary electron detector 281 to 284 The annular conductors 301 to 312 are high resistance bridges in Figure 1.
Claims (1)
、照射点から放出された２次電子を、対物レンズ（１４
）と該対物レンズの上方のリフレクタ電極（２２）との
間に配置された検出器（２６）で検出する電子ビーム装
置に用いられ、該検出器（２６）付近と該リフレクタ電
極（２２）との間に、下方の環状導体の周囲長の方が上
方の環状導体の周囲長よりも長い複数の該環状導体（２
８１〜２８４）を、該１次電子ビーム（１０）を囲むよ
うに配置し、下方の該環状導体の電位が上方の該環状導
体の電位よりも高くなるように該環状導体に電圧を印加
して、該検出器側に該２次電子を案内するようにしたこ
とを特徴とする２次電子案内装置。 ２）、隣合う前記環状導体（２８１〜２８４）間を高抵
抗の線状物（３０１〜３０４）で連結し、上方端の該環
状導体（２８１）と下方端の該環状導体（２８４）との
間に電圧を印加したことを特徴とする請求項１記載の装
置。 ３）、前記環状導体（２８１〜２８４）は、互いに隣合
う前記検出器（２６）の間に向いて突出した形状である
ことを特徴とする請求項１又は２記載の装置。[Claims] 1) A sample (16) is irradiated with a primary electron beam (10), and the secondary electrons emitted from the irradiation point are captured by an objective lens (14).
) and a reflector electrode (22) above the objective lens. During the process, a plurality of the annular conductors (2
81 to 284) are arranged to surround the primary electron beam (10), and a voltage is applied to the annular conductor so that the potential of the lower annular conductor is higher than the potential of the upper annular conductor. A secondary electron guiding device characterized in that the secondary electrons are guided to the detector side. 2), connecting the adjacent annular conductors (281 to 284) with high resistance wires (301 to 304), and connecting the annular conductor (281) at the upper end and the annular conductor (284) at the lower end. 2. The device according to claim 1, wherein a voltage is applied between. 3) The device according to claim 1 or 2, wherein the annular conductor (281 to 284) has a shape that projects between the adjacent detectors (26).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2207143A JPH0493677A (en) | 1990-08-03 | 1990-08-03 | Secondary electron guide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2207143A JPH0493677A (en) | 1990-08-03 | 1990-08-03 | Secondary electron guide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0493677A true JPH0493677A (en) | 1992-03-26 |
Family
ID=16534919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2207143A Pending JPH0493677A (en) | 1990-08-03 | 1990-08-03 | Secondary electron guide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0493677A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8326180B2 (en) | 2009-02-24 | 2012-12-04 | Ricoh Company, Limited | Development device, process cartridge, and image forming apparatus |
-
1990
- 1990-08-03 JP JP2207143A patent/JPH0493677A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8326180B2 (en) | 2009-02-24 | 2012-12-04 | Ricoh Company, Limited | Development device, process cartridge, and image forming apparatus |
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