JPH0490657A - Opto-electric transducer device - Google Patents

Abstract

PURPOSE:To improve durability and to realized low cost by providing a protection layer composed of an inorganic thin film on a opto-electric transducer element, driving wiring, and signal wiring, and providing an impact relaxation layer composed of an organic film between the edge part of an abrasion resistance layer and a transparent substrate. CONSTITUTION:A opto-electric transducer element part 1, a storage capacitor part 2, TET(thin film transistor) parts 3, 4 a matrix signal wiring part 5, and a gate driving wiring part 6 are integrally formed on a transparent base material 10 by the identical process. On a second conductive layer 28, a passivation layer 11 composed of the inorganic thin film of SiN is formed mainly for the protection stabilization of a opto-electric transducer element part 1 and the semiconductor layer surface of the TET parts 3, 4 and an impact relaxation layer 12 composed of polymide resin is formed on the passivation layer 11, further, an abrasion resistance layer 8 is adhered through an adhesion layer 9 above it. Thus, the opto-electric transducer device with high durability and low production cost can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoelectric conversion device, and more specifically, it relates to a photoelectric conversion device, and more particularly, to a photoelectric conversion device, in which an original whose image is read while being closely attached to a -dimensional line sensor is moved relatively. The present invention relates to a photoelectric conversion device used in an input unit of a facsimile, an image reader, a digital copying machine, an electronic blackboard, etc., which reads image information.

[Prior Art] In recent years, in order to miniaturize and improve the performance of facsimile machines, image leagues, etc., long line sensors with equal-magnification optical systems have been developed as photoelectric conversion devices. Furthermore, in order to reduce size and cost, a photoelectric conversion device has been developed that uses a sensor to directly detect light reflected from a document through a transparent spacer such as a thin plate of glass, without using a 1-magnification fiber lens array.

Figures 5(A) and 5(B) are from Nikkei Electronics 19g7.11.16 (No. 434) 20
It is a schematic diagram of the above-mentioned photoelectric conversion device proposed by the present applicants in pages 7 to 221 or Japanese Patent Application Laid-Open No. 63-226064.

FIG. 5(A) is a schematic cross-sectional view of a photoelectric conversion element array of a conventional photoelectric conversion device viewed from the main scanning direction, and FIG. 5(B) is a schematic cross-sectional view of the photoelectric conversion element array viewed from the document side. FIG. In addition, Fig. 5 (A) is A of Fig. 5 CB).
-A' cross-sectional view is shown.

In a conventional photoelectric conversion device, a-Si:H (amorphous hydrogenated silicon) is used to form a photoelectric conversion element section 1, a storage capacitor section 2, TPT (thin film transistor) sections 3 and 4, a matrix signal wiring section 5, and a gate. The drive wiring section 6 and the like are integrally formed on the transparent insulating substrate 1o by a simple process.

On the insulating substrate 10 is a first conductor layer 24 made of Cr.
, an insulating layer 25 made of SiN or the like, a photoconductive semiconductor layer 26 made of a-Si:H, an ohmic contact layer 27 made of n'a-5i:H, and a second conductor N made of Aβ.
28 is formed.

Further, on the second conductive layer 28, polyimide or the like having an extremely low content of impurity ions etc. is used mainly to protect and stabilize the surface of the semiconductor layer 26 of the photoelectric conversion element section 1 and the TFT section 3.4. A passivation layer 18 made of an organic material is further formed on the passivation layer 18, and on top of the passivation layer 18, a wear-resistant layer 8 made of microsheet glass or the like is an adhesive layer in order to protect the photoelectric conversion elements etc. from friction with the original P transported by the original transport roller T. 9 and an electrostatic shield layer 15 made of a transparent conductor such as ITO.

In the conventional photoelectric conversion device formed in this way, the light source S is arranged on the side of the transparent substrate 10 opposite to the original P. The illumination light emitted from the light source S is transmitted to the transparent substrate 1.
0 and illuminates the original P, and the reflected light L' is received by the photoelectric conversion element l. Optical information incident on the photoelectric conversion element section 1 is converted into a photocurrent, stored as a charge in the storage capacitor section 2, and then transferred to the matrix signal wiring section 5 by the switch operation of the TFT section 3 and read out to the outside.

Figures 6(A) to 6(C) are from Unexamined Japanese Patent Publication No. 1-128
The present invention relates to a conventional method for manufacturing a photoelectric conversion device disclosed in Japanese Patent No. 578, and specifically describes a method for laminating a wear-resistant layer onto a photoelectric conversion element.

First, as shown in FIG. 6(A), a large glass substrate 5
0, a plurality of photoelectric conversion arrays are formed in the sub-scanning direction (Y direction in the figure), in which a photoelectric conversion element section 1, a TFT section 3, etc. are arranged in 1728 bits in the main scanning direction (X direction in the figure). A passivation layer 18 made of polyimide resin is formed thereon. Next, as shown in FIG. 6(B), an adhesive 9 made of epoxy resin is applied to the substrate other than the connection electrode part 17 provided with a bonding pad for electrical connection with an external circuit (not shown). A wear-resistant layer 8 made of thin glass having a transparent electrostatic shield layer formed on the lower surface is placed thereon. Then, as shown in FIG. 6(C), the thin glass 8 is moved under pressure in the scanning direction from the end of the thin glass on the connection electrode part 17 side using a pressure roller R, so that the thin glass 8 is placed on the photoelectric conversion element. to paste together. moreover,
After the contact t/119 is cured, it is sliced along dividing line 19 to form a charge conversion array.

[Problem to be solved by the invention] However, in the above-mentioned conventional photoelectric conversion device,
If we aim to further reduce costs, the following issues arise.

As one means for achieving cost reduction of a photoelectric conversion device, the width of a light-transmitting substrate in the sub-scanning direction on which a photoelectric conversion element portion and the like are formed is reduced. In this type of photoelectric conversion device, multiple photoelectric conversion arrays are first formed simultaneously on a large-sized transparent substrate, and then each photoelectric conversion array is divided to form an independent array of photoelectric conversion devices. Ru. That is, by reducing the substrate width of the light-transmitting substrate on which the photoelectric conversion element portion and the like are formed, it is possible to increase the number of large-sized photoelectric conversion arrays to be formed, and it is possible to reduce the cost of the photoelectric conversion array.

However, in the case of conventional photoelectric conversion devices that use an organic material such as polyimide as a passivation layer, even if an attempt is made to reduce costs by simply reducing the substrate width, it is difficult to achieve this due to problems with moisture resistance. Since organic materials such as polyimide have hygroscopicity or water permeability, as time passes, moisture infiltrates from the edge of the substrate shown as the moisture infiltration area in FIG. This is because it deteriorates the semiconductor layer of the semiconductor layer.

In conventional photoelectric conversion devices, the area from the edge of the substrate to the photoelectric conversion element and TFT is designed to be wide as a moisture intrusion path, so that moisture entering from the edge of the substrate does not reach the photoelectric conversion element or TFT. The only thing left to do is to ensure a long time for the film to reach the underlying semiconductor layer and somehow maintain moisture resistance.

Therefore, in conventional photoelectric conversion devices that use organic materials as passivation layers, it is difficult to reduce the substrate width.
Further cost reduction cannot be expected.

On the other hand, by using an inorganic thin film material that exhibits almost no water permeability, such as a silicon nitride film, as a passivation layer, it is possible to ensure the moisture resistance of the photoelectric conversion device and reduce the substrate width to reduce costs.

However, when an inorganic thin film material is used as a passivation layer, a problem as illustrated in FIG. 7 occurs.

FIG. 7 is an enlarged sectional view of FIG. 6(B) viewed from the main scanning direction.

According to the above-described method for bonding a thin glass sheet onto a photoelectric conversion element, a passivation layer 18 made of an inorganic thin film material is formed on the photoelectric conversion element, an adhesive layer 9 is applied, and then a thin glass plate 8 is placed on top of the passivation layer 18. At this time, as shown in FIG. 6(A), the end portion 20 of the thin glass sheet 8 on which the transparent electrostatic shielding layer 15 is formed hits the passivation layer 18 violently, and the impact causes the inorganic thin film passivation layer 18 to was damaged and cracks 21 were generated in the passivation layer, making it difficult to ensure moisture resistance.

Specifically, the following phenomena have been confirmed when cracks occur in the passivation layer.

(2) Moisture that has entered through the cracks deteriorates the semiconductor layer of the photoelectric conversion element section or the TFT section, reducing the S/N ratio of the photoelectric conversion device.

■ Moisture that has entered through the cracks and impurities contained in the adhesive layer, such as chlorine ions (Cj21), corrode the ρ wiring section due to the effect of the bias applied within the photoelectric conversion device, and eventually the A℃ wiring section. disconnect the wire.

Therefore, simply using an inorganic thin film material as a passivation layer cannot expect to ensure durability, and it is extremely difficult to further reduce the cost of photoelectric conversion devices.

Therefore, an object of the present invention is to provide a photoelectric conversion device that is provided with a highly durable protective layer and is manufactured at a low manufacturing cost. A plurality of photoelectric conversion elements, drive wiring for driving the charging conversion elements, and signal wiring for reading out electrical signals output from the photoelectric conversion elements are formed on the photoelectric conversion element, and further, the photoelectric conversion elements are formed on the photoelectric conversion element. A wear-resistant layer made of thin glass is provided on the element, the drive wiring, and the signal wiring, and a document is placed on the wear-resistant layer facing the photoelectric conversion element, and is opposite to the document on the transparent substrate. The photoelectric conversion element receives the reflected light of the light emitted from the light source disposed on the surface side of the document, transmitted through the light-transmitting substrate, and irradiated on the document, and the electrical signal outputted from the photoelectric conversion element is transmitted to the photoelectric conversion element. In a photoelectric conversion device that reads data through signal wiring, a protective layer made of an inorganic thin film is provided on the photoelectric conversion element, the drive wiring, and the signal wiring, and an organic layer is provided between an end of the wear-resistant layer and the transparent substrate. A shock absorbing layer made of a film is provided.

[Function] With the configuration of the present invention described above, further cost reduction of the photoelectric conversion device can be realized.

Further, according to the present invention, a passivation layer made of an inorganic thin film material such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed on a semiconductor layer such as a photoelectric conversion element, or a conductive layer such as a drive wiring and a signal wiring. The photoelectric conversion element Reduces the load applied to the inorganic thin film passivation layer when laminating thin glass on top,
It becomes possible to prevent damage to the inorganic thin film passivation layer, and it is possible to ensure sufficient moisture resistance of the photoelectric conversion device.

Furthermore, according to the present invention, it is possible to prevent damage to the passivation layer made of an inorganic thin film.
It becomes possible to reduce the substrate width in the sub-scanning direction of the light-transmitting substrate forming the photoelectric conversion element portion, etc., and further cost reduction of the photoelectric conversion device can be easily realized.

[Example] Hereinafter, the present invention will be described in detail with reference to the drawings.

Figure 1 (A) Figure 1 (B) and Figure 1 (C) are
1 is a main scanning direction cross-sectional view, a plan view, and a sub-scanning direction cross-sectional view schematically showing a first embodiment of a photoelectric conversion device according to the present invention.

In addition, FIG. 1(A) and FIG. 1(C) respectively show the AA' cross-sectional view and the C-C° cross-sectional view of FIG. 1(B).

In the first embodiment, a-Si:H is used as the semiconductor layer, and the photoelectric conversion element section 1, storage capacitor section 2, TFT sections 3 and 4, matrix signal wiring section 5, gate drive wiring section 6, etc. are transparent. They are integrally formed on the photosensitive insulating substrate 10 by the same process.

On the insulating substrate 10, a first conductive layer 24 made of, for example, Cr, an insulating layer 25 made of SiN or the like, a photoconductive semiconductor layer 26 made of a-3i:H, and a photoconductive semiconductor layer 26 made of n'''a-3i:H are formed. An ohmic contact layer 27 made of the same material and a second conductive layer 28 made of Ani are formed.

In the photoelectric conversion element section 1, 30 and 31 are upper layer electrode wirings. Of the light from the light source S, the signal light L° reflected by the original P changes the conductivity of the photoconductive semiconductor layer 26 made of a-3i:H (upper layer electrode wiring 30 . Change the current flowing between 31. Note that 3
2 is a metal light-shielding layer, which is connected to an appropriate driving source to form a main electrode 30 (source electrode or drain electrode) and 3
1 (train electrode or source electrode).

The storage capacitor section 2 includes a lower electrode wiring 33, an insulating layer 25 formed on the lower electrode wiring 33, a photoconductive semiconductor 26, and an upper electrode of the photoelectric conversion element section 1 formed on the photoconductive semiconductor 26. It is composed of a wire continuous to the wire 31. The structure of this storage capacitor section 2 is that of a so-called MrS capacitor. Although either positive or negative bias conditions can be used, stable capacitance and frequency characteristics can be obtained by always using the lower electrode wiring 33 in a negative bias state.

The TFT sections 3 and 4 have a lower layer electrode 1 line 3 serving as a gate electrode.
4, an insulating layer 25 forming a gate insulating layer, and a semiconductor layer 26
And the upper layer electrode arrangement I which is the source electrode! 35, an upper layer electrode wiring 36 serving as a drain electrode, and the like.

In the matrix signal wiring section 5, the substrate l.

Above is an individual signal wiring 22 made of a first conductive layer, an insulating layer 25 covering the individual signal wiring, a semiconductor layer 26, and a common signal wiring made of a second conductive layer crossing the individual signal wiring! ! 3
7 are sequentially stacked. 38 is a contact hole for making ohmic contact with the individual signal wiring 22 and the common signal wiring 37, and 39 is an interline shield wiring provided between the common signal wirings.

In the wiring section 6 of the TPT driving gate line, the substrate 10
an individual gate wiring 40 consisting of a first conductive fi24 on top;
A common gate wiring 4 consisting of an insulating layer 25 covering the individual gate wiring, a semiconductor layer 26, an ohmic contact H27, and a second conductive layer 28 intersects with the individual gate wiring 40.
1 are sequentially stacked. 42 is a contact hole for making ohmic contact between the individual gate wiring 40 and the common gate wiring 41.

As described above, in the photoelectric conversion device of the first embodiment, the photoelectric conversion element section, the storage capacitor section, the TFT section, the matrix signal wiring section, and the gate drive wiring section are all made of photoconductive semiconductor layers, insulating layers, and conductive layers. Since it has a laminated structure of layers, each part is formed simultaneously by the same process.

Further, on the second conductive layer 28, there is a passivation layer 11 made of an inorganic thin film of SiN, mainly for protecting and stabilizing the semiconductor layer surfaces of the photoelectric conversion element section 1 and the TFT section 3.4. A shock-reducing layer 12 made of polyimide resin is formed on the shock absorbing layer 12, and a friction-resistant layer 8 made of microsheet glass or the like is further formed on the adhesive layer 9 to protect the photoelectric conversion element etc. from friction with the original P.
It is glued through.

Note that in order to prevent static electricity generated due to friction between the original P and the wear-resistant layer 8 from having an adverse effect on photoelectric conversion elements, a transparent material such as ITO is used between the passivation layer 11 and the wear-resistant layer 8. It is desirable that an antistatic layer 15 made of a photoconductive layer is formed. This anti-static layer may extend to the surface of the wear-resistant layer 8 for grounding.

As shown in FIG. 1(B), the shock mitigation layer 12 is formed between the photoelectric conversion element section 1 and the connection electrode section 17 of the gate drive wiring section 6 and the matrix signal wiring section 5. and is formed in the wiring area not including the connection electrode part 17.

Next, a method for manufacturing the photoelectric conversion device of the first example will be specifically described.

First, Cr was deposited to a thickness of 100 mm on a large insulating substrate such as glass.
The first conductor layer 24 is deposited by zero-person sputtering and then patterned into a desired shape. After that, Si
An insulating layer 25 made of N, a semiconductor layer 26 made of a-3i:H, and an ohmic contact layer 27 made of n''a-3i:H are successively deposited by plasma CVD.

The film forming conditions for each of the above layers are as shown in Table 1.

2 (less than -4) After that, AI2, which is a conductive material that will become the source and drain electrodes, is deposited by a 5,000-meter sputtering method, and then patterned into a desired shape to form a second conductive layer 28. do.

Thereafter, unnecessary ohmic contact layers are removed by etching to form channels of the photoelectric conversion element section 1 and the TFT sections 3 and 4. The ohmic contact layer is removed by reactive ion etching.

Thereafter, the semiconductor layer between the photoelectric conversion elements is removed by etching to separate the photoelectric conversion elements.

Furthermore, after that, a SiN layer is deposited as a passivation layer 11 on the entire surface of the large substrate on which the photoelectric conversion element is formed by plasma CVD.

When forming the passivation layer 11, if the substrate temperature is raised too high, hydrogen contained in the semiconductor layer 26 will escape, or mutual diffusion will occur between A° C. of the second conductor layer and the ohmic contact layer 27. Therefore, it is preferable that the substrate temperature at this time is not higher than the substrate temperature during the formation of the insulating layer 25, the semiconductor layer 26, and the ohmic contact layer 27. In the converter device, the substrate temperature during the deposition of a-Si+H is 150° C. to 250° C., so the substrate temperature during the formation of the socivation layer 11 is preferably 150° C. or lower. Therefore, in the photoelectric conversion device of the first example,
Set the substrate temperature to 150℃, S i H4”4SCCM
, N2 = 200SCCM (SiH4:=1:50
), pressure 0.2 Torr, discharge power 10
At 0 W, the SiN passivation layer 11 was formed to a thickness of 600 mm.
Form 0 people.

Note that the passivation layer 11 is made of 0% Si in addition to SiN.
It can also be formed using 5iON or the like.

Next, bonding pad 1 for wire bonding
After removing the passivation layer formed on the photoelectric conversion element 7 by etching, polyimide resin is applied between the photoelectric conversion element part 1 and the connection electrode part 17 of the gate drive wiring part 6 and the matrix signal wiring part 5, and the photoelectric conversion element It is selectively applied to a thickness of about 5 to 10 μm by screen printing on the passivation layer 11 in the wiring region not including the portion 1 and the connection electrode portion 17, and is cured by heating to form the impact relaxation layer 12. At this time, it is desirable that the curing temperature of the impact relaxation layer 12 is also 150° C. or lower, similar to the formation temperature of the passivation layer 11.

Here, the screen printing conditions for the impact mitigation layer in the first example will be described. As the screen printing plate, a mesh made of polyester synthetic fibers is preferably used. If a mesh made of thin metal wires such as stainless steel is used, there is a risk that the thin metal wires will violently hit the passivation layer made of an inorganic thin film during printing and damage the passivation layer, but if a mesh made of synthetic fibers is used, the passivation layer will be damaged. This is because damage can be prevented. The size of the mesh may be appropriately set in consideration of the viscosity of the polyimide resin, the degree of formation of bubbles, etc. The thickness of the emulsion material may be appropriately set in consideration of the thickness of the impact-reducing layer. Furthermore, it is preferable to use a squeegee made of silicone rubber.

Note that the impact mitigation layer 12 can also be formed of polyimide resin, silicone resin, polyamide resin, or the like.

Further, after forming the impact mitigation layer 12 as described above, an adhesive made of epoxy resin is applied with a dispenser, a thin glass plate 8 is placed thereon, and the adhesive is bonded under pressure as described in the prior art. , the adhesive layer 9 is heated and cured. If it is necessary to take measures against static electricity, an ITO film is formed on the surface of the thin glass 8 in advance (Note that it is also desirable that the heat curing temperature of the adhesive layer 9 be 150° C. or lower.

After laminating a thin glass sheet onto a large insulating substrate, it is divided into photoelectric conversion arrays using a slicer. In this way, the photoelectric conversion device of the first example is manufactured.

Now, the feature of the first embodiment is that a passivation layer made of an inorganic thin film is formed between the photoelectric conversion element part 1 and the connection electrode part 17 and in the wiring area not including the photoelectric conversion element part 1 and the connection electrode part 17. It has a structure in which a shock absorbing layer 12 made of an organic film is selectively laminated on the layer 11, and a thin glass plate 8 is further bonded via an adhesive layer 9.

Since the impact mitigation layer 12 is disposed between the inorganic thin film passivation layer 11 and the thin glass sheet 8, it alleviates the impact load applied to the passivation layer 11 made of an inorganic thin film when the thin glass sheets 8 are bonded together. However, it has a function of preventing damage to the inorganic thin film passivation layer 11. More specifically, by providing the impact mitigation layer 12 in the wiring region where the end of the thin glass 8 hits when the thin glass 8 is bonded together, the load applied by the end of the thin glass to the inorganic thin film passivation layer 11 is reduced. It is a relief.

The material properties of the impact mitigation layer 12 include that it can be formed at a low temperature, and is softer than the inorganic thin film passivation layer 11, so that the impact mitigation layer 12 deforms flexibly when a large load is applied to bond the thin glass sheets 8 together. It is desirable to reduce the load per unit area applied to the inorganic thin film passivation layer 11 by dispersing or absorbing the load, thereby preventing cracks from occurring.

Note that a flow stopper 16 is provided near the end of the thin glass 8 on the impact buffering layer 12 in order to prevent the adhesive before hardening from flowing into the bonding pad portion 17 .

FIG. 2 is a plan view schematically showing a second embodiment of the photoelectric conversion device according to the present invention.

The feature of the second embodiment is that between the photoelectric conversion element section 1 and the connection electrode section 17 provided on the transparent substrate 10, and between the photoelectric conversion element section 1, the connection electrode section 17, and the wiring section 5.6. It has a structure in which a shock-absorbing layer 12 made of an organic film is selectively formed in a region not included. The structural difference from the first embodiment is that the first embodiment forms a shock mitigation layer on the gate drive wiring section 5 and the matrix signal interconnection section 6, whereas the second embodiment The shock absorbing layer is formed only in areas other than on the wiring section 5 and the matrix signal wiring section 6.

In the second embodiment, the impact mitigation layer 12 is provided around the gate drive wiring section 5 and the matrix signal wiring section 6, and the ends of the thin glass 8 are placed on the impact mitigation layer 12, so that the thin glass 8 This prevents the ends of the wiring portions 5 and 6 from coming into contact with the inorganic thin film passivation layer 11 on the wiring portions 5 and 6. The impact relaxation layer 12 disperses or absorbs the large load generated when the thin glass sheets 8 are bonded together, thereby alleviating the load, thereby preventing damage to the passivation layer 11.

Furthermore, even if a mesh of fine metal wires is used when selectively forming the impact mitigation layer 12 by screen printing, there is no problem of damaging the passivation layer 11 on the gate drive wiring section 5 and the matrix signal wiring section 6.

Note that a flow stopper 16 is provided near the end of the thin glass plate 8 on the shock absorbing layer 12 to prevent the adhesive before hardening from flowing into the bonding pad portion 17 .

FIG. 3 shows an equivalent circuit diagram of an embodiment of a photoelectric conversion device according to the present invention. This embodiment is broadly divided into a photoelectric conversion section 60,
Readout switch IC70 and drive switch IC
It consists of 80.

The optical information incident on the photoelectric conversion elements 51-1 to Sxa-4a is transferred to the photoelectric conversion elements 51-1 to S as-4m, storage capacitor Ci+-+"-Cmsa□8, and TPT for transfer.
T, -1 to TSB-48, R1- of TPT for reset
3~R3a-48t matrix signal wiring L1~L 48
A parallel voltage output is obtained through the . Further, the readout switch IC70 converts the signal into a serial signal and takes it out to the outside.

In the configuration example of the photoelectric conversion device of the present invention, the total number of pixels is 1728.
A bit photoelectric conversion element is divided into 36 blocks of 48 bits each. Each operation proceeds sequentially in blocks.

Photoelectric conversion elements S I-1 to S 1-48 of the first block
The optical information incident on the is converted into photocurrent and stored in the capacitor.

This is detected as a charge in the sensors C8+-1 to Cl11-411.

After a certain period of time, a first voltage pulse for transfer is applied to the gate drive line G, and the transfer TFTs T1-8 to T1-48 are turned on. Now storage capacitor Ca+-
+~C8+-411 charges are matrix signal wiring, ~
It is transferred through L48 to load capacitors CL1-CR48.

Subsequently, the charges stored in the load capacitors CLl to cL48 are transferred to the transfer switch Usw+ by the transfer pulse Gt.
~U 9W48 is simultaneously driven and transferred to the read capacitor CA and ~C146.

Subsequently, by sequentially applying voltage pulses from the shift register SR to the gate drive lines g, ~g4s,
The signal charge of the first block transferred to the readout capacitor Crl-CT411 is transferred to the readout switch Tg
It is converted into a serial signal by w+~T mWa, amplified by amplifier Amp, and output voltage to the outside of the photoelectric conversion device.
. , is extracted as .

Then, the reset pulse grat is sequentially applied to the reset switch VOW, and the readout switch Tsw and the reset switch Vsw are simultaneously turned on, and the readout capacitors CTl to Ca are turned on. , are sequentially reset to the reset potential VR.

In addition, a reset voltage pulse Crat is applied to the reset switches Rstv+ to R5w48, and the load capacitors CLl-CL4! Reset l. Next, a voltage pulse is applied to the gate drive line G2, and the transfer operation of the second block begins. At the same time, reset TPT R+-+ ~R+
-4s turns on, resetting the charges in the storage capacitors CI+-1 to C51-4m of the first block and preparing for the next readout.

Thereafter, the gate drive lines Gs, G-, . . . are sequentially driven to output data for one line.

Now, by applying the photoelectric conversion device configured in this way, various devices such as a facsimile machine, an image reader, a digital copying machine, and an electronic whiteboard can be configured.

FIG. 4 shows an example of a facsimile machine constructed using the photoelectric conversion device of the present invention. Here, 102 is a feeding roller for feeding the original 6 toward the reading position;
Reference numeral 4 denotes a separation piece for reliably separating and feeding the originals 6 one by one. A platen roller 106 is provided at a reading position with respect to the photoelectric conversion device to regulate the surface of the document P to be read and to convey the document P.

In the illustrated example, W is a recording medium in the form of a roll paper,
Image information read by the photoelectric conversion device or image information transmitted from the outside is formed. Reference numeral 110 denotes a recording head for forming the image, and various types such as a thermal head and an inkjet recording head can be used. Further, this recording head may be of a serial type or a line type. A platen roller 112 transports the recording medium P to a recording position by the recording head 110 and regulates the recording surface thereof.

Reference numeral 120 denotes an operation panel that includes switches and messages for receiving operation inputs, and a display section for notifying the status of the apparatus.

Reference numeral 130 denotes a system control board, which is provided with a control section for controlling each section, an image information processing circuit section, a transmitting/receiving section, and the like. 140 is a power source for the device.

By using the photoelectric conversion device of the present invention as an image input section of a system such as a facsimile, it was possible to significantly reduce the cost of the entire system.

[Effects of the Invention] As explained above, according to the present invention, a plurality of photoelectric conversion elements, drive wiring for driving the photoelectric conversion elements, and electricity output from the photoelectric conversion elements are provided on a transparent substrate. A wear-resistant layer made of thin glass is provided on the photoelectric conversion element, drive wiring, and signal wiring, and the document is placed on the wear-resistant layer facing the photoelectric conversion element. Then, the light is emitted from a light source placed on the opposite side of the translucent substrate from the original, passes through the translucent substrate, and irradiates the original.The reflected light is received by the photoelectric conversion element, and output from the photoelectric conversion element. In a photoelectric conversion device that reads electrical signals transmitted through signal wiring, a protective layer made of an inorganic thin film is provided on the photoelectric conversion element, drive wiring, and signal wiring, and a protective layer made of an inorganic thin film is provided between the wear-resistant layer and the transparent substrate. By providing the shock-relaxing layer, further cost reduction of the photoelectric conversion device can be realized. the law of nature\

[Brief explanation of the drawing]

FIG. 1(A), FIG. 1(B), and FIG. 1(C) are a cross-sectional view in the main scanning direction, a plan view, and a sub-view, respectively, schematically showing a first embodiment of a photoelectric conversion device according to the present invention. 2 is a plan view schematically showing a second embodiment of the photoelectric conversion device according to the present invention; FIG. 3 is an equivalent circuit diagram of the photoelectric conversion device according to the present invention; FIG. 4 is a cross-sectional view in the scanning direction; 5(A) and 5(B) are a schematic cross-sectional view in the main scanning direction and a plan view of a conventional photoelectric conversion device. 6(A) to 6(C) are schematic diagrams showing a conventional method of manufacturing a photoelectric conversion device, and FIG. 7 is a schematic diagram illustrating problems of a conventional photoelectric conversion device. . DESCRIPTION OF SYMBOLS 1... Photoelectric conversion element part, 2... Storage capacitor part, 3.4... TFT part, 5... Matrix signal wiring part, 6... Gate drive wiring part, 8... Thin glass , 9... Adhesive layer, 10... Transparent substrate, 11... Inorganic passivation layer, 12... Shock mitigation layer, 15... ITO layer, 17... Connection electrode part, 24. ...Conductor layer, 25...Insulating layer, 26...Semiconductor layer, 27...Ohmic contact layer, 28...Conductor layer.

Claims (2)

[Claims] (1) A plurality of photoelectric conversion elements, drive wiring for driving the photoelectric conversion elements, and signal wiring for reading out electrical signals output from the photoelectric conversion elements are formed on a transparent substrate. Further, a wear-resistant layer made of thin glass is provided on the photoelectric conversion element, the drive wiring, and the signal wiring, a document is placed on the wear-resistant layer facing the photoelectric conversion element, and the light-transmitting substrate is placed on the wear-resistant layer. The photoelectric conversion element receives reflected light of light emitted from a light source disposed on the side opposite to the original, passes through the light-transmitting substrate, and irradiates the original, and is output from the photoelectric conversion element. In a photoelectric conversion device that reads an electrical signal through the signal wiring, a protective layer made of an inorganic thin film is provided on the photoelectric conversion element, the drive wiring, and the signal wiring, and an end portion of the wear-resistant layer and the transparent substrate are provided. A photoelectric conversion device characterized in that a shock-reducing layer made of an organic film is provided between the two. (2) The photoelectric conversion device according to claim 1, wherein the shock mitigation layer is provided between an end of the wear-resistant layer and the drive wiring or the signal wiring.