JP3044354B2 - Photoelectric conversion device - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device, and more specifically, while relatively moving a document from which an image is read in a state in which the document is brought into close contact with a one-dimensional line sensor. The present invention relates to a photoelectric conversion device used for an input unit such as a facsimile that reads image information, an image reader, a digital copying machine, and an electronic blackboard.

[Related Art] In recent years, a long line sensor having an equal-magnification optical system has been developed as a photoelectric conversion device for miniaturization and high performance of a facsimile, an image reader, and the like. Further, a photoelectric conversion device has been developed in which a sensor directly detects reflected light from a document via a transparent spacer such as a thin glass plate without using a 1: 1 fiber lens array for miniaturization and cost reduction.

FIGS. 5 (A) and 5 (B) show Nikkei Electronics 1987.11.16 (No. 434) pages 207 to 221 or
It is a schematic diagram of the above-mentioned photoelectric conversion device proposed by the present applicant in JP-A-63-226064 and the like.

FIG. 5A is a schematic cross-sectional view of a photoelectric conversion element array of a conventional photoelectric conversion device viewed from a main scanning direction.
FIG. 2B is a schematic plan view of the photoelectric conversion element array viewed from the original side. FIG. 5 (A) is a sectional view taken along the line AA ′ of FIG. 5 (B).

In a conventional photoelectric conversion device, a-Si: H (amorphous silicon hydride) is used to form a photoelectric conversion element section 1, a storage capacitor section 2, TFT (thin film transistor) sections 3 and 4, a matrix signal wiring section 5, and a gate. The drive wiring portion 6 and the like are integrally formed on the translucent insulating substrate 10 by a simple process.

On the insulating substrate 10, a first conductor layer 24 made of Cr, Si
An insulating layer 25 made of N or the like, a photoconductive semiconductor layer 26 made of a-Si: H, an ohmic contact layer 2 made of n ⁺ a-Si: H
7. A second conductor layer 28 made of Al is formed.

Furthermore, on the second conductor layer 28, polyimide or the like having a very small content of impurity ions or the like is mainly used for protecting and stabilizing the surface of the semiconductor layer 26 of the photoelectric conversion element section 1 and the TFT sections 3 and 4. A passivation layer 18 made of an organic material, and a wear-resistant layer 8 made of micro-sheet glass or the like for protecting the photoelectric conversion element and the like from friction with the document P conveyed by the document conveying roller T are further formed thereon. 9 and an electrostatic shield layer 15 made of a transparent conductive material such as ITO.

In the conventional photoelectric conversion device thus formed, the light source S
Are arranged on the surface of the translucent substrate 10 opposite to the original P. The illumination light L emitted from the light source S is applied to the light transmitting substrate 10.
To illuminate the original P, and the reflected light L ′ is received by the photoelectric conversion element portion 1. The optical information incident on the photoelectric conversion element unit 1 is converted into a photocurrent, stored in the storage capacitor unit 2 as electric charges, transferred to the matrix signal wiring unit 5 by the switching operation of the TFT unit 3, and read out.

FIGS. 6 (A) to 6 (C) show Japanese Patent Application Laid-Open No. 1-1285.
No. 78 discloses a conventional method of manufacturing a photoelectric conversion device, and particularly shows a method of attaching a wear-resistant layer on a photoelectric conversion element.

First, as shown in FIG. 6 (A), a large glass substrate
A plurality of photoelectric conversion arrays each having 1,728 bits of the photoelectric conversion element unit 1 and the TFT unit 3 arranged in the main scanning direction (the X direction in the drawing) on the 50 are formed in the sub-scanning direction (the Y direction in the drawing). A passivation layer 18 made of a polyimide resin is formed thereon. Next, as shown in FIG. 6 (B), an adhesive 9 made of epoxy resin is applied to the substrate other than the connection electrode portion 17 provided with the bonding pad for electrically connecting to an external circuit (not shown). Then, a wear-resistant layer 8 made of thin glass having a light-transmitting electrostatic shield layer formed on the lower surface is placed thereon. Then, as shown in FIG. 6 (C), the thin glass 8 is pressed and moved from the end of the thin glass on the connection electrode 17 side in the scanning direction using a pressing roller R.
Is bonded on the photoelectric conversion element. Further, after the adhesive layer 9 is cured, it is sliced along the division line 19 to form a photoelectric conversion array.

[Problems to be Solved by the Invention] However, in the above-described conventional photoelectric conversion device, the following problems occur when the cost is further reduced.

As one means for reducing the cost of the photoelectric conversion device, reducing the substrate width in the sub-scanning direction of the light-transmitting substrate on which the photoelectric conversion element portion and the like are formed is performed. In this type of photoelectric conversion device, first, a plurality of photoelectric conversion arrays are simultaneously formed on a large-sized light-transmitting substrate, and then divided into each of the photoelectric conversion arrays to form independent array-shaped photoelectric conversion devices. You. That is, when the substrate width of the light-transmitting substrate on which the photoelectric conversion element portion and the like are formed is reduced, the number of photoelectric conversion arrays formed on a large-sized substrate can be increased, and the cost of the photoelectric conversion array can be reduced.

However, in the case of a conventional photoelectric conversion device using an organic material such as polyimide as a passivation layer, even if an attempt is made to achieve cost reduction by simply reducing the width of the substrate,
It is difficult to realize due to a problem in moisture resistance. Since organic materials such as polyimide have hygroscopicity or water permeability, water infiltrates from the edge of the substrate shown as a water intrusion region in FIG. 5 (A) with time, and the photoelectric conversion element portion or the TFT portion. This is because the semiconductor layer is deteriorated.
In a conventional photoelectric conversion device, the region from the substrate end to the photoelectric conversion element and the TFT is designed to be a wide water infiltration path, so that moisture that intrudes from the end of the substrate is converted to the photoelectric conversion element or the TFT. Only a long time is required to reach a part of the semiconductor layer, and the moisture resistance is only maintained.

Therefore, in a conventional photoelectric conversion device using an organic material as a passivation layer, it is difficult to reduce the substrate width, and further cost reduction cannot be expected.

On the other hand, by using an inorganic thin film material having almost no water permeability such as a silicon nitride film as the passivation layer, it is conceivable to secure the moisture resistance of the photoelectric conversion device and to reduce the substrate width to reduce the cost.

However, when an inorganic thin film material is used as the passivation layer, a problem as shown in FIG. 7 occurs. FIG. 7 is an enlarged cross-sectional view of FIG. 6B viewed from the main scanning direction.

According to the above-described method of attaching the thin glass to the photoelectric conversion element, the passivation layer 18 made of an inorganic thin film material is formed on the photoelectric conversion element, the adhesive layer 9 is applied, and the thin glass 8 is placed thereon. At this time, FIG. 6 (A)
The edge 20 of the thin glass 8 having the light-transmitting electrostatic shielding layer 15 formed on the surface thereof abruptly hits the passivation layer 18, and the impact damages the inorganic thin film passivation layer 18 and causes a crack 21 This causes a problem that it is difficult to secure moisture resistance.

When a crack occurs in the passivation layer, the following phenomena have been specifically confirmed.

Moisture entering through the cracks degrades the semiconductor layer of the photoelectric conversion element portion or the TFT portion and lowers the S / N ratio of the photoelectric conversion device.

The moisture penetrated from the cracks and the impurities contained in the adhesive layer, for example, chlorine ions (Cl ⁻ ), corroded the Al wiring portion due to the effect of the bias applied in the photoelectric conversion device,
Finally, the Al wiring portion is disconnected.

Therefore, simply using an inorganic thin film material as the passivation layer cannot be expected to ensure durability, and it is extremely difficult to further reduce the cost of the photoelectric conversion device.

Therefore, an object of the present invention is to provide a highly durable protective layer,
Another object of the present invention is to provide a photoelectric conversion device that is inexpensive to manufacture.

[Means for Solving the Problems] In order to achieve the above object, the present invention provides a method for manufacturing a semiconductor device comprising:
A photoelectric conversion element portion including a plurality of photoelectric conversion elements, a signal wiring for reading an electrical signal transmitted from the photoelectric conversion element, and a protective layer including an inorganic thin film provided on the photoelectric conversion element, A sheet glass smaller than the surface of the substrate provided on the protective layer, wherein the inorganic thin film extends at least immediately below an edge of the sheet glass, and at least an end region of the sheet glass. There is an impact relaxation layer made of an organic film under a part of the impact relaxation layer, and the impact relaxation layer does not include a photoelectric conversion element portion from the photoelectric conversion element portion to a region of the substrate not covered with the thin glass. A photoelectric conversion device is provided.

Further, according to the present invention, a photoelectric conversion element portion including a plurality of photoelectric conversion elements is provided over a substrate, a signal wiring for reading an electric signal transmitted from the photoelectric conversion element, and provided on the photoelectric conversion element. Having a protective layer made of an inorganic thin film, and a thin glass sheet provided on the protective layer, the thin glass being smaller than the surface of the substrate, wherein the inorganic thin film extends at least immediately below an end of the thin glass, An impact relaxation layer made of an organic film is provided below at least a part of an end region of the thin glass, and the impact relaxation layer is provided between the photoelectric conversion element portion and a region of the substrate not covered with the thin glass. A photoelectric conversion device provided without including a photoelectric conversion element portion,
There is provided an information processing apparatus including a transport roller that transports a document to a reading position by the photoelectric conversion device.

Further, according to the present invention, there is provided a photoelectric conversion element portion including a plurality of photoelectric conversion elements on a substrate, a signal wiring for reading out an electric signal transmitted from the photoelectric conversion element, and an inorganic thin film on the photoelectric conversion element. Forming a protective layer consisting of: and bonding a thin glass plate smaller than the surface of the substrate onto the substrate, wherein the protective layer is formed on the photoelectric conversion element and at least the thin plate is formed. An impact absorbing layer formed of an organic film is formed so as to extend directly below the glass edge, from the photoelectric conversion element portion to the region of the substrate not covered with the thin glass, and the edge of the thin glass. A method for manufacturing a photoelectric conversion device is provided, wherein the method is formed below at least a part of a region and not including the photoelectric conversion element portion.

[Operation] With the configuration of the present invention described above, the cost of the photoelectric conversion device can be further reduced.

Further, according to the present invention, a semiconductor layer such as a photoelectric conversion element,
A passivation layer made of an inorganic thin film material such as a silicon nitride film, a silicon oxide film or a silicon oxynitride film is formed on a conductive layer such as a drive wiring and a signal wiring, and an end of a wear-resistant layer made of thin glass and a drive wiring are formed. Alternatively, by forming an impact relaxation layer made of an organic film such as a polyimide resin, a silicone resin, or a polyamide resin between a signal wiring and an inorganic thin film passivation layer when laminating thin glass on the photoelectric conversion element. It is possible to reduce the load applied to the inorganic thin film and prevent the inorganic thin film passivation layer from being damaged, and to sufficiently secure the moisture resistance of the photoelectric conversion device.

Still further, according to the present invention, the substrate width in the sub-scanning direction of the light-transmitting substrate on which the photoelectric conversion element portion and the like are formed is reduced in order to prevent damage to the passivation layer formed of the inorganic thin film. This makes it possible to easily realize further cost reduction of the photoelectric conversion device.

Examples Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 (A), FIG. 1 (B) and FIG. 1 (C)
FIG. 2 is a cross-sectional view in a main scanning direction, a plan view, and a sub-scanning direction schematically showing a first embodiment of the photoelectric conversion device according to the present invention.

1 (A) and 1 (C) are a sectional view taken along the line AA 'and a sectional view taken along the line CC' of FIG. 1 (B), respectively.

In the first embodiment, a-Si: H is used as a semiconductor layer, and a photoelectric conversion element unit 1, a storage capacitor unit 2, a TFT unit 3
And 4, the matrix signal wiring portion 5, the gate drive wiring portion 6, and the like are integrally formed on the light-transmitting insulating substrate 10 by the same process.

On the insulating substrate 10, a first conductor layer made of, for example, Cr
24, an insulating layer 25 made of SiN or the like, a photoconductive semiconductor layer 26 made of a-Si: H, an ohmic contact layer 27 made of n ⁺ a-Si: H, and a second conductor layer 28 made of Al are formed. Have been.

In the photoelectric conversion element section 1, reference numerals 30 and 31 denote upper electrode wirings. Of the light L from the light source S, the signal light L ′ reflected by the document P changes the conductivity of the photoconductive semiconductor layer 26 made of a-Si: H, and the upper electrode wiring 30 facing in a comb shape.
The current flowing between 31 is changed. Reference numeral 32 denotes a metal light-shielding layer, which is connected to an appropriate drive source to control electrodes (gate electrodes) opposed to the main electrodes 30 (source or drain electrodes) and 31 (drain or source electrodes).
You may make it become.

The storage capacitor unit 2 includes a lower electrode wiring 33, an insulating layer 25 formed on the lower electrode wiring 33, and a photoconductive semiconductor 26.
And a wiring formed on the photoconductive semiconductor 26 and connected to the upper electrode wiring 31 of the photoelectric conversion element portion 1. The structure of the storage capacitor section 2 is a so-called MIS capacitor structure. Although either positive or negative bias conditions can be used, stable capacitance and frequency characteristics can be obtained by using the lower layer electrode wiring 33 in a state where it is always negatively biased.

The TFT sections 3 and 4 include a lower electrode wiring 34 serving as a gate electrode.
, An insulating layer 25 serving as a gate insulating layer, a semiconductor layer 26, an upper electrode wiring 35 serving as a source electrode, an upper electrode wiring 36 serving as a drain electrode, and the like.

In the matrix signal wiring section 5, the first
The individual signal wiring 22 made of the conductive layer, the insulating layer 25 covering the individual signal wiring, the semiconductor layer 26, and the common signal wiring 37 made of the second conductive layer are sequentially stacked so as to cross the individual signal wiring. 38 is a contact hole for making ohmic contact with the individual signal wiring 22 and the common signal wiring 37, and 39 is a line shield wiring provided between the common signal wirings.

In the wiring section 6 of the TFT drive gate line, the individual gate wiring 40 made of the first conductive layer 24, the insulating layer 25 covering the individual gate wiring, the semiconductor layer 26, the ohmic contact layer 27, and Intersecting with the gate line 40, a common gate line 41 made of the second conductive layer 28 is sequentially stacked. Reference numeral 42 denotes a contact hole for making an ohmic contact between the individual gate wiring 40 and the common gate wiring 41.

As described above, in the photoelectric conversion device of the first embodiment, all of the photoelectric conversion element portion, the storage capacitor portion, the TFT portion, the matrix signal wiring portion, and the gate drive wiring portion are made of a photoconductive semiconductor layer, an insulating layer, and a conductor. Each part is formed simultaneously by the same process because it has a laminated structure such as layers.

Further, a passivation layer 11 made of an inorganic thin film of SiN is formed on the second conductive layer 28 mainly for protection and stabilization of the semiconductor layer surfaces of the photoelectric conversion element section 1 and the TFT sections 3 and 4.
On the passivation layer 11, an impact relaxation layer 12 made of a polyimide resin is formed, and further thereon, a friction-resistant layer 8 made of micro-sheet glass or the like for protecting the photoelectric conversion element or the like from friction with the document P is formed. It is adhered via an adhesive layer 9.

In order to prevent static electricity generated by friction between the document P and the wear-resistant layer 8 from affecting the photoelectric conversion element and the like, a transparent material such as ITO is provided between the passivation layer 11 and the wear-resistant layer 8. It is desirable to form an antistatic layer 15 made of a photoconductive layer. This antistatic layer may extend to the surface of the wear-resistant layer 8 for grounding.

As shown in FIG. 1 (B), the shock absorbing layer 12 is provided between the photoelectric conversion element 1 and the connection electrode 17 of the gate drive wiring 6 and the matrix signal wiring 5, and Are formed in a wiring portion region not including the connection electrode portion 17.

Next, a method for manufacturing the photoelectric conversion device of the first embodiment will be specifically described.

First, Cr is deposited on a large insulating substrate such as glass to a thickness of 1000 mm.
The first conductor layer 24 is formed by depositing by a sputtering method and then patterning into a desired shape. Thereafter, an insulating layer 25 made of SiN, a semiconductor layer 26 made of a-Si: H, n ⁺ a-Si: H
The ohmic contact layer 27 made of is continuously deposited by the plasma CVD method.

 The film forming conditions for each layer are as shown in Table 1.

Thereafter, Al, which is a conductive material serving as source and drain electrodes, is deposited by a 5000 ° sputtering method, and then patterned into a desired shape to form a second conductive layer 28.

Thereafter, unnecessary ohmic contact layers are removed by etching, and channels of the photoelectric conversion element unit 1 and the TFT units 3 and 4 are formed. The removal of the ohmic contact layer is performed by reactive ion etching.

After that, the semiconductor layer between the photoelectric conversion elements is removed by etching, and the photoelectric conversion elements are separated.

Thereafter, a SiN layer is deposited as a passivation layer 11 on the entire surface of the large substrate on which the photoelectric conversion elements are formed by a plasma CVD method.

When the passivation layer 11 is formed, if the substrate temperature is too high, hydrogen contained in the semiconductor layer 26 escapes or interdiffusion occurs between Al of the second conductor layer and the ohmic contact layer 27. The substrate temperature at this time is the insulating layer 25, the semiconductor layer 26, the ohmic contact layer 27
It is preferable that the substrate temperature is not higher than the substrate temperature at the time of formation.In a photoelectric conversion device using a-Si: H as a semiconductor layer, the substrate temperature at the time of deposition of a-Si: H is 150 ° C. to 250 ° C. Therefore, the substrate temperature when forming the passivation layer 11 is 150 ° C.
It is preferable to set the following. Therefore, in the photoelectric conversion device of the first embodiment, the substrate temperature is set to 150 ° C., and SiH ₄ = 4SCC
M, N ₂ = 200SCCM (SiH ₄ : = 1: 50) gas and pressure
0.2Torr, discharge power 100W, SiN passivation layer 11
Is formed to a thickness of 6000 mm.

Note that the passivation layer 11 can be formed of SiO, SiON, or the like in addition to SiN.

Next, bonding pads for wire bonding
After the passivation layer formed on 17 is removed by etching, the polyimide resin is
And the gate drive wiring section 6 and the matrix signal wiring section 5
Passivation layer 11 in the wiring section region between the photoelectric conversion element section 1 and the connection electrode section 17 and between the connection electrode section 17
A shock-absorbing layer 12 is formed by selectively applying a thickness of about 5 to 10 μm on the upper surface by a screen printing method and curing by heating. At this time, the curing temperature of the shock absorbing layer 12 is
It is preferable that the temperature is set to 150 ° C. or lower similarly to the formation temperature of the film.

Here, the screen printing conditions of the shock absorbing layer in the first embodiment will be described. As screen printing plate,
A mesh made of polyester-based synthetic fibers is preferably used. When a mesh made of a thin metal wire such as stainless steel is used, the thin metal wire may violently hit the passivation layer made of an inorganic thin film at the time of printing, and the passivation layer may be damaged. This is because damage can be prevented. The size of the mesh may be appropriately set in consideration of the viscosity of the polyimide resin and the quality of the bubbles. The milk material thickness may be appropriately set in consideration of the thickness of the impact relaxation layer. Further, a squeegee made of silicone rubber is preferably used.

The shock absorbing layer 12 can be formed of a silicone resin, a polyamide resin, or the like in addition to the polyimide resin.

Further, after forming the shock absorbing layer 12 as described above, an adhesive made of an epoxy resin is applied with a dispenser, the thin glass 8 is placed thereon, and pressure bonding is performed as described in the related art. Then, the adhesive layer 9 is cured by heating. If it is necessary to take measures against static electricity, an ITO film is formed on the surface of the thin glass 8 in advance. It is desirable that the heat curing temperature of the adhesive layer 9 is also set to 150 ° C. or lower.

Then, after laminating thin glass on a large insulating substrate, the substrate is divided by a slicer for each photoelectric conversion array.
Thus, the photoelectric conversion device of the first embodiment is manufactured.

The first embodiment is characterized in that the photoelectric conversion element 1 and the connection electrode 17 are located between the photoelectric conversion element 1 and the connection electrode 17.
On the passivation layer 11 made of an inorganic thin film formed in the wiring portion region not including 17, the shock absorbing layer 12 made of an organic film is provided.
Are selectively laminated, and the thin glass 8 is bonded via an adhesive layer 9.

Since the shock absorbing layer 12 is disposed between the inorganic thin film passivation layer 11 and the thin glass 8, the thin glass 8
It has a function of alleviating the impact load applied to the passivation layer 11 made of an inorganic thin film when bonding together, and preventing the inorganic thin film passivation layer 11 from being damaged. More specifically, by providing the shock absorbing layer 12 in the wiring area where the end of the thin glass 8 abuts when the thin glass 8 is bonded, the load applied by the end of the thin glass to the inorganic thin film passivation layer 11 can be reduced. It is alleviating.

The material properties of the shock absorbing layer 12 are that it can be formed at a low temperature, is softer than the inorganic thin film passivation layer 11, and is softly deformed when a large load for bonding the thin glass 8 is applied. By dispersing or absorbing the load, it is desired that the load applied to the inorganic thin film passivation layer 11 per unit area is reduced and no crack is generated.

A flow stopper 16 is provided near the edge of the thin glass 8 on the shock absorbing layer 12 to prevent the uncured adhesive from flowing into the bonding pad portion 17.

FIG. 2 is a plan view schematically showing a second embodiment of the photoelectric conversion device according to the present invention.

The feature of the second embodiment is that the photoelectric conversion element portion 1, the connection electrode portion 17, and the wiring portions 5, 6 are provided between the photoelectric conversion element portion 1 provided on the light transmitting substrate 10 and the connection electrode portion 17. The structure has a structure in which the shock absorbing layer 12 made of an organic film is selectively formed in a region not containing the shock absorbing layer. The structural difference from the first embodiment is that the first embodiment forms the shock absorbing layer on the gate drive wiring section 5 and the matrix signal wiring section 6, whereas the second embodiment has the gate drive section. The shock absorbing layer is formed only in a region other than the wiring section 5 and the matrix signal wiring section 6.

In the second embodiment, the shock absorbing layer 12 is provided around the gate drive wiring section 5 and the matrix signal wiring section 6, and the end of the thin glass 8 is arranged on the shock absorbing layer 12. Is prevented from contacting the inorganic thin film passivation layer 11 on the wiring portions 5 and 6.
A large load generated when laminating the thin glass 8 is dispersed or absorbed by the impact relaxation layer 12 so as to mitigate the damage, so that the passivation layer 11 can be prevented from being damaged. Further, even if a thin metal wire mesh is used when selectively forming the shock absorbing layer 12 by the screen printing method, there is no problem that the passivation layer 11 on the gate drive wiring section 5 and the matrix signal wiring section 6 is damaged.

In addition, a flow stopper 16 for preventing the adhesive before hardening from flowing into the bonding pad portion 17 is provided near the end of the thin glass 8 on the shock absorbing layer 12.

FIG. 3 shows an equivalent circuit diagram of one embodiment of the photoelectric conversion device according to the present invention. This embodiment is roughly divided into the photoelectric conversion unit 60,
It comprises a readout switch IC70 and a drive switch IC80.

Light information incident on the photoelectric conversion elements S _1-1 to S _36-48 are accumulated from the photoelectric conversion elements S _1-1 to S _36-48 capacitor C _S1-1 -C
_S36-48, T _1-1 of the transfer TFT through T _36-48, the reset TFT R
_{1-1 to} R _36-48 , and the matrix signal wirings L _{1 to} L ₄₈ , and become parallel voltage outputs. In addition, readout switch IC70
And becomes a serial signal and is taken out.

In the configuration example of the photoelectric conversion device of the present invention, photoelectric conversion elements having a total number of pixels of 1728 bits are divided into 36 blocks by collecting 48 bits. Each operation proceeds sequentially in units of this block.

The optical information incident on the photoelectric conversion elements S _{1-1 to} S _1-48 of the first block is converted into photocurrent, and the storage capacitors C _S1-1 to C _S1-1
Stored as charges in _S1-48 . After a certain time, the first voltage pulse for transfer gate driving lines G ₁ was added, transferring TFT
T _{1-1 to} T _1-48 are turned on. This _causes the charges of the storage capacitors C _{S1-1 to} C _S1-48 to be transferred to the matrix signal wiring L ₁
Through ~L _48, it is transferred to the load capacitor C _L1 -C _L48.

Then, the charge stored in the load capacitor C _L1 -C _L48 simultaneously drives the transfer switch U _SW1 ~U _SW48 by the transfer pulse G _t, is transferred to the read capacitor C _T1 -C _T48.

Subsequently, shifting to the gate drive lines g ₁ to g ₄₈ registers S
By the voltage pulse from R ₂ is successively added, the signal charges of the first block transferred to the read capacitor C _T1 -C _T48 is converted into a serial signal by the reading switches T _SW1 through T _SW48, the amplifier Amp It is amplified and taken _out as an output voltage _Vout to the outside of the photoelectric conversion device.

Then, the reset pulse g _res is applied to the reset switch V _SW
Sequentially applied, reading switches T _SW and a reset switch V _SW is turned ON at the same time, the read capacitor C _T1 -C _T48 is reset to sequentially reset potential V _R to.

Further, by applying a voltage pulse C _res for resetting the reset switch R _SW1 to R _SW48 resets the load capacitor C _L1 -C _L48. Then, a voltage pulse is applied to the gate driving line G _2, transfer operation of the second block starts. At the same time, the reset TFTs R _{1-1 to} R _1-48 are turned on, resetting the charges of the storage capacitors C _{S1-1 to} C _S1-48 of the first block and preparing for the next reading.

Hereinafter, data for one line is output by sequentially driving the gate drive lines G ₃ , G ₄ ,.

By applying the photoelectric conversion device thus configured, various devices such as a facsimile device, an image reader, a digital copier, and an electronic blackboard can be configured.

FIG. 4 shows an example of a facsimile apparatus configured using the photoelectric conversion device of the present invention. Here, reference numeral 102 denotes a feed roller for feeding the document 6 toward the reading position;
Are separation pieces for reliably separating and feeding the documents 6 one by one. 106 is provided at a reading position with respect to the photoelectric conversion device to regulate the surface to be read of the original P and
Is a platen roller for transporting the sheet.

W is a recording medium in the form of a roll paper in the illustrated example, on which image information read by the photoelectric conversion device or image information transmitted from the outside is formed. 110 is a recording head for performing the image formation, and various types such as a thermal head and an ink jet recording head can be used. The recording head may be of a serial type or a line type. Reference numeral 112 denotes a platen roller which conveys the recording medium P to a recording position of the recording head 110 and regulates a recording surface thereof.

Reference numeral 120 denotes an operation panel provided with a switch for receiving an operation input, a message, and a display unit for notifying the status of the apparatus.

Reference numeral 130 denotes a system control board, which is provided with a control unit for controlling each unit, a processing circuit for image information, a transmission / reception unit, and the like. 140 is a power supply of the apparatus.

By using the photoelectric conversion device of the present invention as an image input unit of a system such as a facsimile, the cost of the entire system can be significantly reduced.

[Effects of the Invention] As described above, according to the present invention, a plurality of photoelectric conversion elements, a driving wiring for driving the photoelectric conversion elements, and electricity output from the photoelectric conversion elements are provided on the translucent substrate. Signal wiring for reading out the target signal, and further, a wear-resistant layer made of thin glass is provided on the photoelectric conversion element, the drive wiring and the signal wiring, and the original is placed on the wear-resistant layer facing the photoelectric conversion element. Then, the reflected light of the light emitted from the light source disposed on the side of the light-transmitting substrate opposite to the original and transmitted through the light-transmitting substrate and illuminating the original is received by the photoelectric conversion element and output from the photoelectric conversion element. In a photoelectric conversion device that reads electrical signals through signal wiring, a protective layer made of an inorganic thin film is provided on the photoelectric conversion element, the driving wiring, and the signal wiring, and an organic film is provided between the wear-resistant layer and the light-transmitting substrate. Provide a shock absorbing layer Thereby, the cost of the photoelectric conversion device can be further reduced.

[Brief description of the drawings]

FIGS. 1 (A), 1 (B), and 1 (C) are a cross-sectional view, a plan view, and a sub-scanning direction, respectively, schematically showing a first embodiment of a photoelectric conversion device according to the present invention. FIG. 2 is a plan view schematically showing a photoelectric conversion device according to a second embodiment of the present invention; FIG. 3 is an equivalent circuit diagram of the photoelectric conversion device according to the present invention; FIG. 5 is a schematic configuration diagram of a facsimile apparatus to which the photoelectric conversion device of the present invention is applied. FIGS. 5A and 5B are schematic sectional views in a main scanning direction and a plan view of a conventional photoelectric conversion device. FIGS. 6 (A) to 6 (C) are schematic diagrams showing a method for manufacturing a conventional photoelectric conversion device, and FIG. 7 is a schematic diagram for explaining problems of the conventional photoelectric conversion device. . DESCRIPTION OF SYMBOLS 1 ... Photoelectric conversion element part, 2 ... Storage capacitor part, 3, 4 ... TFT part, 5 ... Matrix signal wiring part, 6 ... Gate drive wiring part, 8 ... Thin glass, 9 ... Adhesive layer , 10: translucent substrate, 11: inorganic passivation layer, 12: shock absorbing layer, 15: ITO layer, 17: connection electrode part, 24: conductor layer 25: insulating layer, 26: ... Semiconductor layer, 27 ... Ohm contact layer, 28 ... Conductor layer.

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Tetsuya Shimada 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-1-128578 (JP, A) JP-A Sho-62 -219963 (JP, A) JP-A-4-88744 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 27/146 H04N 1/028

Claims (7)

(57) [Claims] 1. A photoelectric conversion element portion including a plurality of photoelectric conversion elements on a substrate, a signal wiring for reading out an electric signal transmitted from the photoelectric conversion element, and a signal wiring provided on the photoelectric conversion element. Having a protective layer made of an inorganic thin film, and a thin glass sheet provided on the protective layer, the thin glass being smaller than the surface of the substrate, wherein the inorganic thin film extends at least immediately below an end of the thin glass, An impact relaxation layer made of an organic film is provided below at least a part of an end region of the thin glass, and the impact relaxation layer is provided between the photoelectric conversion element portion and a region of the substrate not covered with the thin glass. The photoelectric conversion device is provided without including a photoelectric conversion element portion. 2. The photoelectric conversion device according to claim 1, wherein said signal wiring is provided below said shock absorbing layer. 3. A photoelectric conversion element portion including a plurality of photoelectric conversion elements on a substrate, a signal wiring for reading an electric signal transmitted from the photoelectric conversion element, and a signal wiring provided on the photoelectric conversion element. Having a protective layer made of an inorganic thin film, and a thin glass sheet provided on the protective layer, the thin glass being smaller than the surface of the substrate, wherein the inorganic thin film extends at least immediately below an end of the thin glass, An impact relaxation layer made of an organic film is provided below at least a part of an end region of the thin glass, and the impact relaxation layer is provided between the photoelectric conversion element portion and a region of the substrate not covered with the thin glass. An information processing apparatus comprising: a photoelectric conversion device provided without including a photoelectric conversion element unit; and a transport roller that transports a document to a reading position by the photoelectric conversion device. 4. The information processing apparatus according to claim 3, wherein said signal wiring has a photoelectric conversion device provided below said shock absorbing layer. 5. A photoelectric conversion element section comprising a plurality of photoelectric conversion elements, a signal wiring for reading out an electric signal transmitted from the photoelectric conversion element on a substrate, and an inorganic thin film on the photoelectric conversion element. Forming a protective layer consisting of: and bonding a thin glass plate smaller than the surface of the substrate onto the substrate, wherein the protective layer is formed on the photoelectric conversion element and at least the thin plate is formed. An impact absorbing layer formed of an organic film is formed so as to extend directly below the glass edge, from the photoelectric conversion element portion to the region of the substrate not covered with the thin glass, and the edge of the thin glass. A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device is formed below at least a part of a region and not including the photoelectric conversion element portion. 6. The method according to claim 5, wherein the signal wiring is provided below the shock absorbing layer. 7. The apparatus according to claim 5, wherein a plurality of said photoelectric conversion devices are simultaneously formed on the same substrate, and then divided.
A manufacturing method of the photoelectric conversion device according to the above.