JPH0490511A - Liquid crystal element - Google Patents
Liquid crystal elementInfo
- Publication number
- JPH0490511A JPH0490511A JP20584890A JP20584890A JPH0490511A JP H0490511 A JPH0490511 A JP H0490511A JP 20584890 A JP20584890 A JP 20584890A JP 20584890 A JP20584890 A JP 20584890A JP H0490511 A JPH0490511 A JP H0490511A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- crystal element
- glass substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 85
- 239000010408 film Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000011521 glass Substances 0.000 claims abstract description 50
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 9
- 239000002861 polymer material Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 22
- 229920001721 polyimide Polymers 0.000 description 22
- 239000004642 Polyimide Substances 0.000 description 21
- 125000001931 aliphatic group Chemical group 0.000 description 11
- 125000003118 aryl group Chemical group 0.000 description 10
- 210000002858 crystal cell Anatomy 0.000 description 10
- 239000002243 precursor Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 125000004093 cyano group Chemical group *C#N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 125000005843 halogen group Chemical group 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000011197 physicochemical method Methods 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- LRMDXTVKVHKWEK-UHFFFAOYSA-N 1,2-diaminoanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=C(N)C(N)=CC=C3C(=O)C2=C1 LRMDXTVKVHKWEK-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000005427 anthranyl group Chemical group 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 150000001717 carbocyclic compounds Chemical class 0.000 description 1
- 125000002837 carbocyclic group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- -1 cycloaliphatic Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- ZHDTXTDHBRADLM-UHFFFAOYSA-N hydron;2,3,4,5-tetrahydropyridin-6-amine;chloride Chemical compound Cl.NC1=NCCCC1 ZHDTXTDHBRADLM-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 150000004668 long chain fatty acids Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Chemical group 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は透明電極とLB膜との間に下地層薄膜を有する
液晶素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a liquid crystal element having a thin underlayer film between a transparent electrode and an LB film.
[従来の技術]
近年、時計やテレビなどの表示媒体として液晶素子を使
った平面デイスプレィが広く使用されるようになってき
ている。[Prior Art] In recent years, flat displays using liquid crystal elements have become widely used as display media for watches, televisions, and the like.
第2図はかかる従来例の液晶素子00)の概略断面図で
ある。FIG. 2 is a schematic cross-sectional view of such a conventional liquid crystal element 00).
この液晶素子(10)は、第2図に示すように電極体(
Ill、(Illと電極体(II)、(ll)の間に充
填された液晶OZとからなっている。This liquid crystal element (10) has an electrode body (
Ill, (liquid crystal OZ filled between Ill and electrode bodies (II), (ll)).
電極体Q11は、ガラス基板にとガラス基板03)上に
形成された透明電極(141とからなっている。The electrode body Q11 consists of a glass substrate and a transparent electrode (141) formed on the glass substrate 03).
このガラス基板色および(または)透明電極側の表面に
は、液晶の分子配列を均一にするために、物理的もしく
は物理化学的方法により表面処理がなされた配向膜層か
形成されている。On the surface of this glass substrate on the color and/or transparent electrode side, an alignment film layer is formed which has been surface-treated by a physical or physicochemical method in order to make the molecular alignment of the liquid crystal uniform.
物理的方法としては5i02や^Uなどの斜方蒸着法や
ラビング法、物理化学的方法としてはポリイミド樹脂の
塗布ののちラビング処理する方法などがあげられる。Examples of physical methods include oblique evaporation methods such as 5i02 and ^U, and rubbing methods; examples of physicochemical methods include a method of applying a polyimide resin and then performing a rubbing treatment.
しかしながら、斜方蒸着法は、液晶に所定のプレチルト
角を与えるのに大変有利であるか、反面真空蒸着である
ため、1O−5torr程度の高真空か必要であり、か
つガラス基板を傾斜しなければならないため、量産性に
乏しいという欠点を有している。However, the oblique evaporation method is very advantageous in giving a predetermined pretilt angle to the liquid crystal, and on the other hand, since it is a vacuum evaporation method, a high vacuum of about 10-5 torr is required, and the glass substrate must be tilted. Therefore, it has the disadvantage of poor mass productivity.
また、ラビング法は、ラビング時に発生するゴミや静電
気により生産性の低下や品質の劣化がおこるという欠点
を有している。Furthermore, the rubbing method has the disadvantage that productivity and quality deteriorate due to dust and static electricity generated during rubbing.
本出願人はかかる従来技術の問題点に鑑み、配向膜をL
B膜で構成した液晶素子を既に提案している(特願平1
−189137号)。In view of the problems of the prior art, the present applicant proposed that the alignment film be
A liquid crystal element composed of B film has already been proposed (Patent Application No. 1999).
-189137).
[発明が解決しようとする課題]
しかしながら、LB膜は製膜に時間がかかるうえに、そ
の膜厚も薄い。そのため、アモルファスシリコンTPT
(薄膜トランジスタ)が形成された基板のように電極
部が数千人〜数−の段差を有する部分に適用すると絶縁
不良を生じるおそれがある。これを避けるためには多数
回積層する必要がある。その結果製膜に時間がかかり、
工程的にもコスト的にも好ましくない。[Problems to be Solved by the Invention] However, the LB film takes time to form and is thin. Therefore, amorphous silicon TPT
If this method is applied to a part where the electrode part has a step difference of several thousand to several times less, such as a substrate on which a thin film transistor (thin film transistor) is formed, there is a risk of insulation failure. To avoid this, it is necessary to stack the layers many times. As a result, film formation takes time,
This is unfavorable in terms of process and cost.
本発明はかかる従来技術の問題点に鑑みなされたもので
あって、数層程度のLB膜であっても、均一でしかも欠
陥のほとんどない液晶配向性を示す液晶素子を提供する
ことを目的とする。The present invention was made in view of the problems of the prior art, and it is an object of the present invention to provide a liquid crystal element that exhibits uniform liquid crystal orientation with almost no defects even if it is an LB film of several layers. do.
また、本発明はアモルファスシリコンTPT(薄膜トラ
ンジスタ)が形成された基板のように電極部が数千人〜
数Iの段差を有していても、この段差部分での配向不良
のない液晶素子を提供することも目的とする。In addition, the present invention is applicable to a substrate on which an amorphous silicon TPT (thin film transistor) is formed, in which the electrode portion is made up of several thousand people.
Another object of the present invention is to provide a liquid crystal element that is free from alignment defects at the step portion even if it has a step difference of several I.
さらに、本発明は、強電界性液晶素子のように2通程度
のガラス基板間隔が必要とされるばあいであっても、絶
縁不良のない液晶素子を提供することをも目的とする。A further object of the present invention is to provide a liquid crystal element that is free from insulation defects even when a gap of about two glass substrates is required, such as in a strong electric field liquid crystal element.
[課題を解決するための手段]
本発明の液晶素子は、ガラス基板、該ガラス基板上に形
成された透明電極および該透明電極の表面上に形成され
たLB膜とからなる一方の電極体と、ガラス基板、該ガ
ラス基板上に形成された透明電極および該透明電極の表
面上に形成されたLB膜とからなる他方の電極体と、前
記両電極体間に配設されている液晶とからなる液晶素子
であって、前記透明電極の配向膜が形成される面側に下
地層薄膜が形成されていることを特徴としている。[Means for Solving the Problems] The liquid crystal element of the present invention includes one electrode body consisting of a glass substrate, a transparent electrode formed on the glass substrate, and an LB film formed on the surface of the transparent electrode. , a glass substrate, another electrode body consisting of a transparent electrode formed on the glass substrate and an LB film formed on the surface of the transparent electrode, and a liquid crystal disposed between the two electrode bodies. The liquid crystal element is characterized in that a thin underlayer film is formed on the side of the transparent electrode on which the alignment film is formed.
[作用および実施例] 以下、本発明を図面に基づいて説明する。[Function and Examples] Hereinafter, the present invention will be explained based on the drawings.
第1図は、本発明の液晶素子の一実施例の概略断面図で
ある。FIG. 1 is a schematic cross-sectional view of one embodiment of the liquid crystal element of the present invention.
第1図において、(1)は液晶素子、(2は一方の電極
体、(3)は他方の電極体、(4)は液晶である。In FIG. 1, (1) is a liquid crystal element, (2 is one electrode body, (3) is the other electrode body, and (4) is a liquid crystal.
電極体(2)は、ガラス基板(5)とガラス基板上に形
成された透明電極(6)と、この透明電極(6)上に形
成された下地層薄膜(′7)と、この下地層薄膜(7)
の上に形成された配向膜(8)とからなっている。The electrode body (2) includes a glass substrate (5), a transparent electrode (6) formed on the glass substrate, a base layer thin film ('7) formed on this transparent electrode (6), and this base layer. Thin film (7)
It consists of an alignment film (8) formed on top of the alignment film (8).
電極体(3)は、ガラス基板(5)とガラス基板上に形
成された透明電極(9)とこの透明電極(9)上に形成
された下地層薄膜(7)と、この下地層薄膜(1上に形
成された配向膜(8)とからなっている。The electrode body (3) includes a glass substrate (5), a transparent electrode (9) formed on the glass substrate, a thin base layer film (7) formed on the transparent electrode (9), and a thin base layer film (7) formed on the transparent electrode (9). 1 and an alignment film (8) formed on top of the alignment film (8).
透明電極(6)、(9)には、ITO,5n02などが
用いられる。ITO, 5n02, etc. are used for the transparent electrodes (6) and (9).
配向膜(8)は、LB膜で形成されている。The alignment film (8) is formed of an LB film.
本発明におけるLB膜は、一般式(■):(式中、R1
は少なくとも2個の炭素原子数を有する4価の基、R2
は少なぐとも2個の炭素原子数を有する2価の基、R3
、R4、R5およびR6は、脂肪族、環状脂肪族あるい
は芳香族(これらが相互に組合わさってもよい)の炭素
数1〜30の1価の基(これらの基がハロゲン原子、ニ
トロ基、アミノ基、シアノ基、メトキシ基、アセトキシ
基で置換されていてもよい)または水素原子である。ま
た、少なくともR3、R4、R5およびR6のうち一つ
は、脂肪族、環状脂肪族あるいは芳香族(これらが相互
に組合わさってもよい)の炭素数12〜30の1価の基
(これらの基がハロゲン原子、ニトロ基、アミノ基、シ
アノ基、メトキシ基、アセトキシ基で置換されていても
よい)である)
て表わされる両親媒性高分子物質を、水面上に展開する
ことによりえられる単分子膜か1層重上積層されたのち
、適当な熱処理を施して形成されたものである。積層回
数は1〜10回程度であるのか好ましい。The LB film in the present invention has the general formula (■): (wherein, R1
is a tetravalent group having at least 2 carbon atoms, R2
is a divalent group having at least 2 carbon atoms, R3
, R4, R5 and R6 are aliphatic, cycloaliphatic or aromatic (these may be combined with each other) monovalent groups having 1 to 30 carbon atoms (these groups are halogen atoms, nitro groups, (optionally substituted with an amino group, cyano group, methoxy group, or acetoxy group) or a hydrogen atom. Furthermore, at least one of R3, R4, R5, and R6 is an aliphatic, cycloaliphatic, or aromatic (these may be combined with each other) monovalent group having 12 to 30 carbon atoms. The group may be substituted with a halogen atom, a nitro group, an amino group, a cyano group, a methoxy group, or an acetoxy group. It is formed by laminating one layer of monomolecular film and then subjecting it to appropriate heat treatment. The number of laminations is preferably about 1 to 10 times.
なお、ここにいう熱処理とは、一般式fI)て表わされ
る材料に環化反応を起こさせるためのもので、配向膜形
成ののち液晶素子組立工程でかかる温度以上で、配向膜
材料が分解する温度以下の温度による熱処理であり、具
体的には150〜450℃、好ましくは150〜250
℃の温度による熱処理である。Note that the heat treatment mentioned here is for causing a cyclization reaction in the material represented by the general formula fI), and the alignment film material decomposes at a temperature higher than that applied during the liquid crystal element assembly process after the alignment film is formed. It is a heat treatment at a temperature below temperature, specifically 150 to 450°C, preferably 150 to 250°C.
It is a heat treatment at a temperature of ℃.
このようにして形成されたLB膜は、従来の物理的もし
くは物理化学的な処理をガラス基板に施して形成された
処理層(配向膜)と同程度に、液晶の配向を制御する能
力を有している。The LB film formed in this way has the ability to control the alignment of liquid crystals to the same extent as a treatment layer (alignment film) formed by subjecting a glass substrate to conventional physical or physicochemical treatment. are doing.
本明細書でいうLB膜とは、水面上に形成された単分子
膜が任意の基板上に積層されたものであり、単分子膜を
積層する手法として、垂直浸漬法(LB法)、水平付着
法、回転円筒法などがあげられる。このうち、積層時に
単分子膜の流動配向を生じさせる垂直浸漬法が、とくに
好ましい。The LB film referred to in this specification is a monomolecular film formed on a water surface and laminated on an arbitrary substrate. Methods for laminating monomolecular films include vertical dipping method (LB method), horizontal Examples include the adhesion method and the rotating cylinder method. Among these, the vertical dipping method, which causes fluid orientation of the monomolecular film during lamination, is particularly preferred.
一般式(I)二
で表わされる繰返し単位を有する両親媒性高分子物質と
は、水面上に展開することにより単分子膜とすることが
でき、これを前記少なくとも電極を形成した基板上に単
分子膜として一層以上、好ましくは1〜10層程度積層
することができ、そして積層したものを熱処理して一般
式(I):で表わされる繰返し単位を有するポリイミド
にすることができるものであり、その数平均分子量は、
2000〜3(1(1000、好ましくは2000〜3
0000である。An amphiphilic polymeric substance having a repeating unit represented by general formula (I) 2 can be made into a monomolecular film by being spread on a water surface, and this can be formed into a monomolecular film on the substrate on which at least an electrode is formed. It is a molecular film that can be laminated with one or more layers, preferably about 1 to 10 layers, and the laminated layer can be heat-treated to form a polyimide having a repeating unit represented by the general formula (I): Its number average molecular weight is
2000-3(1(1000, preferably 2000-3
It is 0000.
数平均分子量が、2000〜30HOOの範囲をはずれ
ると、LB膜を作製したときの強度が低すぎたり、粘度
が高すぎてLB膜の作製がうまくいかないといった問題
を生じる。If the number average molecular weight is out of the range of 2000 to 30 HOO, there will be problems such as the strength of the LB film being too low or the viscosity being too high, making it difficult to produce the LB film.
また、一般式(I)におけるR1は少なくとも2個の、
好ましくは5〜20個の炭素原子を含有する4価の基で
あり、芳香族の基であってもよく、環状脂肪族の基であ
ってもよく、芳香族の基と脂肪族の基との結合した基で
あってもよく、さらにはこれらの基が炭素数1〜3aの
脂肪族の基、環状脂肪族の基あるいは芳香族の基と脂肪
族の基とが結合した基、それらの基がハロゲン原子、ニ
トロ基、アミノ基、シアノ基、メトキシ基、アセトキシ
基などの1価の基で、あるいは該1価の基が、−0−−
COO−−NHCO−1−CO−1−S−−C8S−−
NHO2−1−CS−などの結合した基で置換され誘導
体となった基であってもよい。しがし、R1が少なくと
も6個の炭素原子を有するベンゼノイド不飽和によって
特徴づけられた基であるのが、耐熱性、耐薬品性や機械
的特性などの点から好ましい。Moreover, R1 in general formula (I) is at least two,
It is preferably a tetravalent group containing 5 to 20 carbon atoms, and may be an aromatic group or a cycloaliphatic group, and an aromatic group and an aliphatic group may be used. Furthermore, these groups may be an aliphatic group having 1 to 3 a carbon atoms, a cycloaliphatic group, or a group in which an aromatic group and an aliphatic group are bonded. The group is a monovalent group such as a halogen atom, a nitro group, an amino group, a cyano group, a methoxy group, an acetoxy group, or the monovalent group is -0--
COO--NHCO-1-CO-1-S--C8S--
It may also be a group substituted with a bonded group such as NHO2-1-CS- to become a derivative. However, it is preferred that R1 be a group characterized by benzenoid unsaturation having at least 6 carbon atoms from the viewpoint of heat resistance, chemical resistance, mechanical properties, and the like.
前記のごときR1の具体例としては、たとえば、R1の
4個の結合手、すなわち一般式[1)で表わされる繰返
し単位において
などがあげられる。Specific examples of R1 as described above include, for example, the four bonds of R1, ie, the repeating unit represented by the general formula [1].
本明細書にいうベンゼノイド不飽和とは、炭素環式化合
物の構造に関してキノイド構造と対比して用いられる術
語で、普通の芳香族化合物に含まれる炭素環と同じ形の
構造をいう。The term "benzenoid unsaturation" as used herein is a term used in contrast to a quinoid structure regarding the structure of a carbocyclic compound, and refers to a structure having the same shape as a carbocyclic ring contained in ordinary aromatic compounds.
p−キノイド構造
ベンゼノイド不飽和
が結合する手の位置には限定はないが、4個の結合手の
各2個づつがR1を構成する隣接する2個の炭素原子に
存在するばあいには、両性ポリイミド前駆体を用いて形
成した膜などをポリイミド化する際に5員環を形成しゃ
すくイミド化しやすいため好ましい。There is no limit to the position of the bonding hand of the benzenoid unsaturation in the p-quinoid structure, but if two of each of the four bonding hands are present on two adjacent carbon atoms constituting R1, It is preferable because a 5-membered ring is easily formed when polyimidizing a film formed using an amphoteric polyimide precursor, making it easy to imidize.
一般式(1)におけるR2は、少なくとも2個の炭素原
子を含有する2価の基であり、芳香族の基であってもよ
く、脂肪族の基であってもよく、環状脂肪族の基であっ
てもよく、芳香族の基と脂肪族の基との結合した基であ
ってもよく、さらにはこれらの2価の基が炭素数1〜3
0の脂肪族の基、環状脂肪族の基あるいは芳香族の基と
脂肪族の基とが結合した基、それらの基がハロゲン原子
、ニトロ基、アミノ基、シアノ基、メトキシ基、アセト
キシ基などの1価の基で、あるいはこれらの1価の基か
、−0−−COO−−NIICO−1−CO−1−3−
−C9S−−NHCS−1−C3−などに結合した基で
置換された基であってもよい。R2 in general formula (1) is a divalent group containing at least two carbon atoms, and may be an aromatic group, an aliphatic group, or a cycloaliphatic group. It may be a group in which an aromatic group and an aliphatic group are bonded, and furthermore, these divalent groups may have a carbon number of 1 to 3.
0 aliphatic group, a cycloaliphatic group, or a group in which an aromatic group and an aliphatic group are bonded, and these groups are halogen atoms, nitro groups, amino groups, cyano groups, methoxy groups, acetoxy groups, etc. or these monovalent groups, -0--COO--NIICO-1-CO-1-3-
It may also be a group substituted with a group bonded to -C9S--NHCS-1-C3- or the like.
しかし、R2が少なくとも6個の炭素原子を有するベン
ゼノイド不飽和によって特徴づけられた基であるばあい
には、耐熱性、耐薬品性や機械的特性などの点から好ま
しい。However, when R2 is a group characterized by benzenoid unsaturation having at least 6 carbon atoms, it is preferable from the viewpoint of heat resistance, chemical resistance, mechanical properties, etc.
前記のごときR2の好ましい具体例としては、たとえば
F3
F3
(RIOおよび17+1はいずれも炭素原子数1〜30
のアルキルまたはアリール基)
などがあげられる。Preferred specific examples of R2 as described above include, for example, F3 F3 (RIO and 17+1 both have 1 to 30 carbon atoms)
(alkyl or aryl group).
一般式+1+におけるR3、R4、R5およびR6はい
ずれも炭素原子数1〜30、好ましくは1〜22の1価
の脂肪族の基、1価の環状脂肪族の基、芳香族の基と脂
肪族の基との結合した1価の基、それらの基がハロゲン
原子、ニトロ基、アミノ基、シアノ基、メトキシ基、ア
セトキシ基など置換されそれらの基の誘導体となった基
または水素原子である。なお一般式[I)においてR’
、R4、R5およびR6はいずれも一般弐■:
CI+3(CH□≠−(CI+3)2 CH(CIlz
←−−n−1・ n−3)(
式中、R1、R2は前記と同じ)で表わされるポリアミ
ック酸単位に疎水性を付与し、安定な凝縮膜をえるため
に導入される基であり、R’、R’、R5、R6のうち
の少なくとも1個が炭素原子数12〜30、好ましくは
16〜22の前記の基であることが、水面上に安定な凝
縮膜が形成され、それがラングミアン・プロジェット法
(以下、LB法という)により薄膜電極を有するガラス
基板上に累積されるために必要である。R3, R4, R5, and R6 in the general formula +1+ are all monovalent aliphatic groups having 1 to 30 carbon atoms, preferably 1 to 22 carbon atoms, monovalent cycloaliphatic groups, aromatic groups, and aliphatic groups. A monovalent group bonded to a group group, a group substituted with a halogen atom, a nitro group, an amino group, a cyano group, a methoxy group, an acetoxy group, etc. to become a derivative of those groups, or a hydrogen atom. . In addition, in general formula [I], R'
, R4, R5 and R6 are all general 2■: CI+3(CH□≠-(CI+3)2 CH(CIlz
←−−n−1・n−3)(
In the formula, R1 and R2 are the same as above) It is a group introduced in order to impart hydrophobicity to the polyamic acid unit and obtain a stable condensed film, and among R', R', R5, and R6, If at least one of the groups is the above-mentioned group having 12 to 30 carbon atoms, preferably 16 to 22 carbon atoms, a stable condensed film is formed on the water surface, which is formed by the Langmian-Prodgett method (hereinafter referred to as the LB method). ) is required to be deposited on a glass substrate with thin film electrodes.
前記のごときR3、R4、R5、R6の水素原子以外の
具体例としては、たとえば
(以上のnはいずれも12〜30、好ましくは18〜2
2)などがあげられる。ただ本発明の目的を達成するた
めには、0113(C112) で表わされる直鎖
アルキル基を利用するのが、性能的にもコスト的にも最
も望ましい。前述したような/XXロジン子、ニトロ基
、アミノ基、シアノ基、メトキシ基、アセトキシ基など
は必須ではない。しかし、フッ素原子により疎水性は水
素原子と比べ飛躍的に改善されるので、フッ素原子を含
むものを使用するのが好ましい。Specific examples of R3, R4, R5, and R6 other than hydrogen atoms include, for example, (all of the above n are 12 to 30, preferably 18 to 2
2) etc. However, in order to achieve the purpose of the present invention, it is most desirable to use a straight chain alkyl group represented by 0113 (C112) in terms of performance and cost. The aforementioned /XX rosin group, nitro group, amino group, cyano group, methoxy group, acetoxy group, etc. are not essential. However, since fluorine atoms dramatically improve hydrophobicity compared to hydrogen atoms, it is preferable to use those containing fluorine atoms.
LB膜の作製方法としてはとくに限定はないが、累積時
流動配向がおこる方法が望ましく、垂直浸漬法は望まし
い実施態様の1つである。Although there are no particular limitations on the method for producing the LB film, a method in which flow orientation occurs during accumulation is desirable, and a vertical dipping method is one of the preferred embodiments.
この際、長鎖脂肪酸や長鎖アルコールのような公知ラン
グミュア・プロジェット膜材料や、本出願人か先に特開
昭63−218728号に提案している高分子LB膜材
料を混合して使用してもよい。At this time, known Langmuir-Prodgett membrane materials such as long-chain fatty acids and long-chain alcohols, and polymer LB membrane materials previously proposed by the present applicant in JP-A-63-218728 are used. You may.
また、LB膜を累積する前に、電極か形成されたガラス
基板に表面処理を施すことも本発明の望ましい実施態様
である。It is also a desirable embodiment of the present invention to perform surface treatment on the glass substrate on which the electrodes are formed before depositing the LB film.
また、本発明で用いられる下地層薄膜は、厚さ500Å
以上10万以下の、疎水性基も・しくは親水性基を表面
にもち、好ましくは親水性基を表面にもち、150℃で
3時間以上の耐熱性を有するものである。疎水性基の例
としては、アルキル基や不飽和の炭化水素基であって、
直鎖状のものも分枝状のものもよい。さらに、フェニル
、ナフチル、アントラニルなどの縮合多環フェニル基、
ビフェニル、ターフェニルなどの鎖条多環フェニル基、
フッ素原子を含有する種々の基かあげられる。これらは
、各々単独またはその複数が組み合わされてもよい。親
水性基の例としては、エステル・イミド・アミド結合や
、スルホン酸・りん酸・カルボン酸・アルデヒドに含ま
れるカルボニル基、ヒドロキシル基かあげられる。これ
らは、各々単独またはその複数が組み合わされてもよい
。さらに、酸化シリコンなどの酸化物膜の表面なども空
気中の水分などによりヒドロキシル基が存在しているば
あいは親水性基のよい例である。Further, the underlayer thin film used in the present invention has a thickness of 500 Å.
It has 100,000 or less hydrophobic groups or hydrophilic groups on its surface, preferably hydrophilic groups on its surface, and has heat resistance at 150° C. for 3 hours or more. Examples of hydrophobic groups include alkyl groups and unsaturated hydrocarbon groups,
Both straight-chain and branched ones are suitable. Furthermore, fused polycyclic phenyl groups such as phenyl, naphthyl, anthranyl,
chain-striated polycyclic phenyl groups such as biphenyl and terphenyl;
Various groups containing a fluorine atom can be mentioned. These may be used alone or in combination. Examples of hydrophilic groups include ester, imide, and amide bonds, carbonyl groups, and hydroxyl groups contained in sulfonic acids, phosphoric acids, carboxylic acids, and aldehydes. These may be used alone or in combination. Furthermore, the surface of an oxide film such as silicon oxide is also a good example of a hydrophilic group if hydroxyl groups are present due to moisture in the air.
下地層薄膜材の具体例としては、酸化シリコン、ポリジ
アセチレン、ポリエステル、ポリイミド、ポリアミド、
金属酸化物、チッ化珪素などである。また、下地層薄膜
材とLB膜を形成する両親媒性物質の骨格が類似してい
るほど、配向膜として好ましい特性を有するLB膜の形
成か容易に行われる。下地層薄膜の高分子物質と同一の
構造をもつ高分子物質に熱処理により変換しうる両親媒
性高分子物質のLB膜を使用したばあい、配向膜として
好ましい特性を有するLB膜と下地層薄膜との付着性か
よくなり、LB膜の形成は容易となる。Specific examples of base layer thin film materials include silicon oxide, polydiacetylene, polyester, polyimide, polyamide,
These include metal oxides and silicon nitride. Furthermore, the more similar the skeletons of the base layer thin film material and the amphiphilic substance forming the LB film are, the easier it is to form an LB film having desirable characteristics as an alignment film. When using an LB film made of an amphiphilic polymer material that can be converted into a polymer material having the same structure as that of the polymer material of the underlayer thin film through heat treatment, the LB film and the underlayer thin film have favorable characteristics as an alignment film. This improves adhesion with the LB film, making it easier to form the LB film.
前記のようにLB膜を配向膜にすることによってラビン
グなどの処理を施さずに、均一で無欠陥かつ良好な配向
性を有する配向膜をうろことかできる。また、液晶を配
向させる能力を有するLB膜を基板上に積層する層数が
少ないばあいであっても、アモルファスStの薄膜トラ
ンジスタ(TPT)が形成されたガラス基板上のように
数千人〜数通の段差を有するものであっても、その段差
部分での配向不良を防ぐことができる。By using the LB film as an alignment film as described above, it is possible to form an alignment film that is uniform, defect-free, and has good alignment without performing any treatment such as rubbing. Furthermore, even if the number of layers of LB films, which have the ability to orient liquid crystals, is laminated on a substrate, it is possible to stack several thousand to several layers, such as on a glass substrate on which an amorphous St thin film transistor (TPT) is formed. Even if there is a regular step difference, it is possible to prevent alignment defects at the step portion.
さらに、強誘電性液晶素子のように2虜程度のガラス基
板間隔が必要とされるばあいであっても液晶素子の絶縁
不良を防ぐことも可能である。Furthermore, it is possible to prevent poor insulation of the liquid crystal element even in cases where a gap between the glass substrates of about 2 mm is required, such as in the case of a ferroelectric liquid crystal element.
なお、本発明の液晶素子は、透明電極上に下地層薄膜が
形成されているほかは、特願平1−189137号の液
晶素子と特に異なる点はない。The liquid crystal element of the present invention is not particularly different from the liquid crystal element disclosed in Japanese Patent Application No. 1-189137, except that a thin underlayer film is formed on the transparent electrode.
つぎに、実施例により、本発明の液晶素子を詳細に説明
するが、本発明はかかる実施例のみに限定されるもので
はない。Next, the liquid crystal element of the present invention will be explained in detail with reference to Examples, but the present invention is not limited to these Examples.
実施例1
約I証の段差を有するアモルファス5iTFTが形成さ
れたガラス基板と、ITOおよびブラック・マトリック
スが形成されたガラス基板上に、厚さ2000人の酸化
シリコン膜をCVD法により形成した。さらに、前記2
種のガラス基板上にピロメリット酸ジステアリルエステ
ルの酸クロライドとパラフェニレンジアミンを反応させ
てえられる次式の単位を有するポリイミド前駆体(分子
fi:約4,000)を、
LB法により、5層累積し、200℃で1時間熱処理し
電極体を作製した。この熱処理により、該ポリイミド前
駆体は部分的に次式のような単位を有するポリイミドと
なって、LB膜は、非常に良好な耐薬品性と耐熱性を有
するようになった。Example 1 A silicon oxide film with a thickness of 2,000 yen was formed by CVD on a glass substrate on which an amorphous 5i TFT having a height difference of about I was formed, and on a glass substrate on which ITO and a black matrix were formed. Furthermore, the above 2
A polyimide precursor (molecular fi: about 4,000) having a unit of the following formula obtained by reacting the acid chloride of pyromellitic acid distearyl ester and paraphenylene diamine was placed on a seed glass substrate by the LB method. The layers were stacked and heat treated at 200° C. for 1 hour to produce an electrode body. Through this heat treatment, the polyimide precursor partially became a polyimide having units as shown in the following formula, and the LB film came to have very good chemical resistance and heat resistance.
前記の2種の電極体を用意し、2枚の電極体のLB膜形
成時のガラス基板の引上げ方向が互いに直角方向となる
ように液晶素子を構成し、方の電極体の透明電極層を形
成した面の縁部分にシール樹脂として、直径8通のプラ
スチックビーズを分散した酸無水物硬化型エポキシ樹脂
を1辺のみ辺の中央部に5 mm長を残して他の全周に
llll1幅で印刷したうえで、他方の電極を対向させ
た状態で加圧し、140℃で3時間加熱して硬化接着し
た。接着ののち、減圧下で、前記開口部からネマチック
液晶(メルク社製、商品名ZL11565)を注入した
。注入ののち、開口部を市販の酸無水物硬化型エポキシ
樹脂で固着し、液晶を封止してTN型液晶素子を完成し
た。完成した液晶素子をいったん100℃まで加熱して
から徐々に冷却して初期配向させることにより、均一で
無欠陥かつ良好な配向状態の液晶素子かえられた。The two types of electrode bodies described above are prepared, a liquid crystal element is constructed such that the pulling directions of the glass substrates during the formation of the LB film on the two electrode bodies are perpendicular to each other, and the transparent electrode layer of the one electrode body is As a sealing resin on the edge of the formed surface, apply acid anhydride-curing epoxy resin in which 8 plastic beads in diameter are dispersed, leaving a 5 mm length in the center of one side, and 1 width around the entire other circumference. After printing, pressure was applied with the other electrode facing each other, and heating was performed at 140° C. for 3 hours to cure and bond. After adhesion, nematic liquid crystal (manufactured by Merck & Co., trade name: ZL11565) was injected from the opening under reduced pressure. After the injection, the opening was fixed with a commercially available acid anhydride-curing epoxy resin to seal the liquid crystal, completing a TN-type liquid crystal element. By heating the completed liquid crystal device to 100° C. and then gradually cooling it for initial alignment, a uniform, defect-free, and well-aligned liquid crystal device was obtained.
実施例2
約1遍の段差を有するアモルファス5iTFTが形成さ
れたガラス基板と、ITOおよびブラック・マトリック
スが形成されたガラス基板上に、次式の単位を有するポ
リエステル薄膜(分子量。Example 2 A polyester thin film (molecular weight:
約100,000)を膜厚約2左で形成した。(approximately 100,000) was formed with a film thickness of approximately 2 mm.
さらに、これらのガラス基板上にLB法により、実施例
1と同一のLB膜を5層累積し、200℃で1時間熱処
理し電極体を作製した。ついて実施例1と同様の方法で
液晶素子を完成した。完成した液晶素子をいったん10
0℃まで加熱してから徐々に冷却して初期配向させるこ
とにより、均一で無欠陥かつ良好な配向状態の液晶素子
かえられた。Furthermore, five layers of the same LB film as in Example 1 were accumulated on these glass substrates by the LB method, and heat treated at 200° C. for 1 hour to produce an electrode body. A liquid crystal device was then completed in the same manner as in Example 1. Once the completed liquid crystal element
By heating to 0° C. and then gradually cooling for initial alignment, a uniform, defect-free, and well-aligned liquid crystal element was obtained.
実施例3
約1卯の段差を有するアモルファス5iTFTが形成さ
れたガラス基板上と、ITOおよびブラック・マトリッ
クスが形成されたガラス基板上とに、無水ピロメリット
酸と4.4−ジアミノジフェニルエーテルを反応させて
えられる次式の単位を有するポリイミド前駆体(分子量
、約100.000)のN、N−ジメチルフォルムアミ
ド溶液を、スピンコード法により塗布し、400℃で1
時間熱処理した。この熱処理により、上記高分子薄膜は
、はぼ次式に示す単位を有するポリイミド該ポリイミド
薄膜の膜厚は、ITOとブラック・マトリックスが形成
されたガラス基板上で2Iであった。また、他方のガラ
ス基板上の膜厚も2項であった。Example 3 Pyromellitic anhydride and 4,4-diaminodiphenyl ether were reacted on a glass substrate on which an amorphous 5iTFT with a step height of about 1 μm was formed and on a glass substrate on which ITO and a black matrix were formed. An N,N-dimethylformamide solution of a polyimide precursor (molecular weight, approximately 100.000) having a unit of the following formula, which can be obtained, was coated by a spin cord method and heated at 400°C for 1
Heat treated for hours. As a result of this heat treatment, the polymer thin film was formed into a polyimide having units represented by the following formula.The film thickness of the polyimide thin film was 2I on the glass substrate on which ITO and black matrix were formed. Moreover, the film thickness on the other glass substrate was also 2 terms.
さらに、前記2種類のガラス基板上にピロメリット酸ジ
ステアリルエステルの酸クロライドとジアミノアントラ
キノンを反応させてえられる次式の単位を有するポリイ
ミド前駆体(分子M:約5.000)を、
LB法により、5層累積し、200℃で1時間熱処理し
電極体を作製した。この熱処理により、該ポリイミド前
駆体は部分的に次式のような単位を有するポリイミドと
なって、LB膜は、非常に良好な耐薬品性と耐熱性を有
するようになった。Furthermore, a polyimide precursor (molecule M: about 5.000) having a unit of the following formula obtained by reacting the acid chloride of pyromellitic acid distearyl ester and diaminoanthraquinone on the two types of glass substrates was prepared using the LB method. Thus, five layers were accumulated and heat treated at 200° C. for 1 hour to produce an electrode body. Through this heat treatment, the polyimide precursor partially became a polyimide having units as shown in the following formula, and the LB film came to have very good chemical resistance and heat resistance.
前記の2種の電極体を用意し、これら2枚のガラス基板
のLB膜形成時のガラス基板の引上げ方向が互いに直角
方向となるように液晶素子を構成し、一方の電極体の透
明電極層を形成した面の縁部分にシール樹脂として、直
径8JAのプラスチックビーズを分散した酸無水物硬化
型エポキシ樹脂を1辺のみ辺の中央部に5關長を残して
他の全周に1 mm幅で印刷したうえで、他方の電極を
対向させた状態で加圧し、140℃で3時間加熱して硬
化接着した。接着ののち、減圧下で、前記開口部からネ
マチック液晶(メルク社製、商品名ZL12701)を
注入した。注入ののち開口部を市販の酸無水物硬化型エ
ポキシ樹脂で固着し、液晶を封止してTN型液晶素子を
完成した。完成した液晶素子をいったん100℃まで加
熱してから徐々に冷却して初期配向させることにより、
均一で無欠陥かつ良好な配向状態の液晶素子かえられた
。The two types of electrode bodies described above are prepared, and a liquid crystal element is constructed such that the pulling directions of the glass substrates during the formation of the LB film on these two glass substrates are perpendicular to each other, and the transparent electrode layer of one electrode body is As a sealing resin, apply an acid anhydride-curing epoxy resin containing plastic beads with a diameter of 8JA to the edge of the formed surface, leaving a 5-square length in the center of one side, and 1 mm width on the entire other circumference. After printing, the other electrode was pressed against the other electrode and heated at 140° C. for 3 hours to cure and bond. After adhesion, nematic liquid crystal (manufactured by Merck & Co., trade name: ZL12701) was injected from the opening under reduced pressure. After injection, the opening was fixed with a commercially available acid anhydride-curable epoxy resin to seal the liquid crystal, completing a TN-type liquid crystal element. By heating the completed liquid crystal element to 100°C and then gradually cooling it to achieve initial alignment,
A uniform, defect-free, and well-aligned liquid crystal element was obtained.
実施例4
ガラス基板の片側に、パターンを形成したマスクを用い
てITOを200nmの厚さに真空蒸着した。ついで、
ITO電極上に絶縁膜として、シリコン酸化物の膜を真
空蒸着法を用いて100nI11の厚さに形成した。一
方、無水ピロメリット酸とパラフェニレンジアミンを反
応させてえられる次式の単位を有するポリイミド前駆体
(分子量;約50,000)のN、N−ジメチルフォル
ムアミド溶液を、
該ポリミド薄膜の膜厚は、2通であった。Example 4 ITO was vacuum-deposited to a thickness of 200 nm on one side of a glass substrate using a patterned mask. Then,
A silicon oxide film was formed as an insulating film on the ITO electrode to a thickness of 100 nI11 using a vacuum evaporation method. On the other hand, an N,N-dimethylformamide solution of a polyimide precursor (molecular weight: approximately 50,000) having a unit of the following formula obtained by reacting pyromellitic anhydride and para-phenylene diamine was used to determine the thickness of the polyimide thin film. There were two letters.
さらに、ピリメリット酸ジステアリルエステルの酸クロ
ライドとバラフェニレンジアミンを反応させてえられる
次式の単位を有するポリイミド前駆体(分子量:約4,
000)を、前記のITOを蒸着したガラス基板上にス
ピンコード法により塗布し、400℃で1時間熱処理し
た。この熱処理により、前記高分子薄膜は、次式に示す
単位を有するポリイミドとなった。Furthermore, a polyimide precursor (molecular weight: about 4,
000) was applied onto the above-mentioned ITO-deposited glass substrate by a spin code method, and heat-treated at 400° C. for 1 hour. Through this heat treatment, the polymer thin film became polyimide having units shown in the following formula.
LB法により、3層累積し、400℃で1時間熱処理し
電極体を作製した。この熱処理により、該ポリイミド前
駆体は完全に次式のような単位を有するポリイミドとな
って、LB膜は、非常に良好な耐薬品性と耐熱性を有す
るようになった。Three layers were accumulated by the LB method and heat treated at 400° C. for 1 hour to produce an electrode body. By this heat treatment, the polyimide precursor completely became a polyimide having units as shown in the following formula, and the LB film came to have very good chemical resistance and heat resistance.
前記処理を同様に施して作製した電極体を2枚用意し、
それら2枚の電極体のLB膜形成時のガラス基板の引上
げ方向が互いに逆平行方向となるように液晶素子を構成
し、一方の電極体の透明電極層を形成した面の縁部分に
シール樹脂として、直径2−のプラスチックビーズを分
散した酸無水物硬化型エポキシ樹脂を1辺のみ辺の中央
部に5■長を残して他の全周に1 m11幅で印刷した
うえて、他方の透明電極を対向させた状態で加圧し、1
40℃で3時間加熱して硬化接着した。接着ののち、減
圧下で、前記開口部から強誘電性液晶液晶(メルク社製
、商品名ZLI3489)を注入した。注入ののち、開
口部を市販の酸無水物硬化型エポキシ樹脂で固着し、液
晶を封止して強誘電性液晶素子を完成した。完成した液
晶セルをいったん100℃まで加熱してから徐々に冷却
して初期配向させることにより、均一で無欠陥かつ良好
な配向状態の液晶素子かえられた。また、絶縁不良等は
発生しておらず、良好な双安定性もえられた。Prepare two electrode bodies produced in the same manner as above,
The liquid crystal element is constructed so that the pulling directions of the glass substrates during the formation of the LB film on these two electrode bodies are antiparallel to each other, and a sealing resin is applied to the edge of the surface on which the transparent electrode layer of one electrode body is formed. As an example, acid anhydride-curing epoxy resin in which plastic beads with a diameter of 2 mm are dispersed is printed with a width of 1 m11 on the entire circumference, leaving a length of 5 cm in the center of one side, and then printing on the other transparent side. Apply pressure with the electrodes facing each other, and
The adhesive was cured by heating at 40° C. for 3 hours. After adhesion, ferroelectric liquid crystal (manufactured by Merck & Co., trade name: ZLI3489) was injected from the opening under reduced pressure. After injection, the opening was fixed with a commercially available acid anhydride-curable epoxy resin to seal the liquid crystal and complete a ferroelectric liquid crystal element. By heating the completed liquid crystal cell to 100° C. and then gradually cooling it for initial alignment, a liquid crystal element that was uniform, defect-free, and in a good alignment state was obtained. Furthermore, no insulation defects occurred, and good bistability was obtained.
実施例5
約IIの段差を有するアモルファス5iTFTが形成さ
れたガラス基板上と、ITOおよびブラック・マトリッ
クスか形成されたガラス基板上に、厚さ2000人の窒
化シリコン膜をCVD法により形成し、実施例1と同様
にしてLB膜を配向膜としたTN形液晶セルを作製した
。本実施例でえられたTN形液晶セルも、ラビング処理
を施さずに、均一で無欠陥かつ良好な液晶の配向状態か
えられた。Example 5 A silicon nitride film with a thickness of 2000 μm was formed by CVD on a glass substrate on which an amorphous 5i TFT with a step height of about II was formed, and on a glass substrate on which ITO and black matrix were formed. A TN type liquid crystal cell using the LB film as an alignment film was produced in the same manner as in Example 1. The TN type liquid crystal cell obtained in this example also had a uniform, defect-free, and good liquid crystal alignment state without any rubbing treatment.
実施例6
約1−の段差を有するアモルファスS+TPTか形成さ
れたガラス基板上と、ITOおよびブラック・マトリッ
クスが形成されたガラス基板上に、厚さ2000人の酸
化アルミニウム膜をスパッタ法により形成し、実施例1
と同様にしてLB膜を配向膜にしたTN形液晶セルを作
製した。本実施例でえられたTN形液晶セルも、ラビン
グ処理を施さずに、均一で無欠陥かつ良好な液晶の配向
状態かえられた。Example 6 An aluminum oxide film with a thickness of 2,000 yen was formed by sputtering on a glass substrate formed with amorphous S+TPT having a step difference of about 1- and on a glass substrate formed with ITO and a black matrix. Example 1
A TN type liquid crystal cell using the LB film as the alignment film was manufactured in the same manner as described above. The TN type liquid crystal cell obtained in this example also had a uniform, defect-free, and good liquid crystal alignment state without any rubbing treatment.
実施例7
約1遍の段差を有するアモルファス5iTFTが形成さ
れたガラス基板上と、ITOおよびブラック・マトリッ
クスが形成されたガラス基板上に、厚さ2000人の酸
化チタン膜をCVD法により形成し、実施例1と同様に
してLB膜を配向膜にしたTN形液晶セルを作製した。Example 7 A titanium oxide film with a thickness of 2000 mm was formed by CVD on a glass substrate on which an amorphous 5iTFT with a step of about 1 inch was formed, and on a glass substrate on which ITO and a black matrix were formed. A TN type liquid crystal cell using the LB film as an alignment film was produced in the same manner as in Example 1.
本実施例でえられたTN形液晶セルも、ラビング処理を
施さずに、均一で無欠陥かつ良好な液晶の配向状態かえ
られた。The TN type liquid crystal cell obtained in this example also had a uniform, defect-free, and good liquid crystal alignment state without any rubbing treatment.
実施例8
約1遍の段差を有するアモルファス5iTPTか形成さ
れたガラス基板上と、ITOおよびブラック・マトリッ
クスが形成されたガラス基板上に、厚さ2000人の酸
化タンタルをスパッタ法により形成し、実施例1と同様
にしてlB膜を配向膜にしたTN形液晶セルを作製した
。本実施例てえられたTN形液晶セルも、ラビング処理
を施さずに、均一で無欠陥かつ良好な液晶の配向状態か
えられた。Example 8 Tantalum oxide with a thickness of 2,000 mm was formed by sputtering on a glass substrate on which amorphous 5iTPT was formed and on which ITO and black matrix were formed, and the process was carried out. A TN type liquid crystal cell was prepared in the same manner as in Example 1 using the IB film as the alignment film. The TN type liquid crystal cell obtained in this example also had a uniform, defect-free and good liquid crystal alignment state without any rubbing treatment.
比較例
約1uIIlの段差を有するアモルファス5jTPTが
形成されたガラス基板上と、ITOおよびブラック・マ
トリックスが形成されたガラス基板上に、厚さ1000
人の日本合成ゴム■製ポリイミド(オプトマーAL−1
251)薄膜を形成し、ラビング処理を該ポリイミド薄
膜に施したものを用いてTN形液晶セルを作製した。Comparative Example A glass substrate with a thickness of 1000 μm was formed on a glass substrate on which amorphous 5jTPT with a step height of about 1 uIIl was formed, and on a glass substrate on which ITO and a black matrix were formed.
Made of Japanese synthetic rubber polyimide (Optomer AL-1)
251) A TN type liquid crystal cell was manufactured using a polyimide thin film formed by forming a thin film and subjecting the polyimide thin film to a rubbing treatment.
えられた実施例1〜8、および比較例によりえられたT
N型液晶素子について、スタティック駆動でコントラス
トを測定した。結果を第1表に示す。T obtained in Examples 1 to 8 and Comparative Example
The contrast of an N-type liquid crystal element was measured using static driving. The results are shown in Table 1.
第 1
表
[発明の効果]
以上説明したように、本発明によれば、電極体表面がラ
ビング法による処理がなされていなくとも、液晶か均一
でしかも欠陥のほとんどない配向性を示す液晶素子をう
ろことができる。Table 1 [Effects of the Invention] As explained above, according to the present invention, it is possible to produce a liquid crystal element that exhibits uniform liquid crystal orientation with almost no defects even if the surface of the electrode body is not treated by a rubbing method. You can wander around.
また、本発明によれば、基板が数千人〜数虜の段差を有
していても、基板の段差部分での配向不良のない液晶素
子をうろことができる。Further, according to the present invention, even if the substrate has a step difference of several thousand to several degrees, it is possible to move the liquid crystal element without alignment defects at the step portion of the substrate.
さらに、本発明によれば、強電界性液晶素子のように2
遍程度のガラス基板間隔が必要とされるばあいであって
も、絶縁不良のない液晶素子をうろことができる。Furthermore, according to the present invention, two
Even if a uniform spacing between glass substrates is required, a liquid crystal element without insulation defects can be obtained.
第1表より、実施例1〜8の下地層薄膜を用いてLB膜
の積層回数を低減したTN型液晶素子は、ラビング法を
用いたTN型液晶素子(比較例)と同等の特性を有する
ことかわかる。From Table 1, it can be seen that the TN-type liquid crystal devices in which the number of laminations of the LB film was reduced by using the underlayer thin films of Examples 1 to 8 have the same characteristics as the TN-type liquid crystal devices using the rubbing method (comparative example). I understand that.
第1図は本発明の液晶素子一実施例の概略断面図、第2
図は従来例の液晶素子の概略断面図である。
(図面の主要符号)
(1):液晶素子
(2)、(3):電極体
(4)液晶
(7)、下地層薄膜FIG. 1 is a schematic cross-sectional view of one embodiment of the liquid crystal element of the present invention, and FIG.
The figure is a schematic cross-sectional view of a conventional liquid crystal element. (Main symbols in the drawing) (1): Liquid crystal element (2), (3): Electrode body (4) Liquid crystal (7), Underlayer thin film
Claims (1)
および該透明電極の表面上に形成されたLB膜とからな
る一方の電極体と、 ガラス基板、該ガラス基板上に形成された透明電極およ
び該透明電極の表面上に形成されたLB膜とからなる他
方の電極体と、 前記両電極体間に配設されている液晶とからなる液晶素
子であって、 前記透明電極の配向膜が形成される面側に下地層薄膜が
形成されていることを特徴とする液晶素子。 2 前記下地層薄膜が厚さ500Å以上10μm下の親
水性基を表面にもち、さらに150℃で3時間以上の耐
熱性を有することを特徴とする請求項1記載の液晶素子
。 3 前記下地層薄膜が、親水性基を表面にもつ高分子物
質を用いて形成されてなる請求項1記載の液晶素子。 4 前記下地層薄膜が一般式(III): ▲数式、化学式、表等があります▼(III) (式中、R^7は少なくとも2個の炭素原子を有する4
価の基、R^8は少なくとも2個の炭素原子を有する2
価の基) で表わされる高分子物質からなる請求項1記載の液晶素
子。 5 LB膜が熱処理により前記下地層薄膜として用いた
高分子物質と同一の構造をもつ高分子物質に変換しうる
両親媒性高分子物質の単分子膜を、前記下地層薄膜の上
に積層してなる請求項1記載の液晶素子。 6 前記下地層薄膜がSiO_2からなる請求項1記載
の液晶素子。 7 前記下地層薄膜がSi_3N_4からなる請求項1
記載の液晶素子。 8 前記下地層薄膜が金属酸化物からなる請求項1記載
の液晶素子。 9 前記金属酸化物がAl_2O_3である請求項8記
載の液晶素子。 10 前記金属酸化物がTa_2O_5である請求項8
記載の液晶素子。 11 前記金属酸化物がTiO_2である請求項8記載
の液晶素子。[Claims] 1. One electrode body consisting of a glass substrate, a transparent electrode formed on the glass substrate, and an LB film formed on the surface of the transparent electrode; A liquid crystal element comprising: the other electrode body comprising a formed transparent electrode and an LB film formed on the surface of the transparent electrode; and a liquid crystal disposed between the two electrode bodies, the liquid crystal element comprising: A liquid crystal element characterized in that a thin underlayer film is formed on the side on which an alignment film of an electrode is formed. 2. The liquid crystal element according to claim 1, wherein the underlayer thin film has a hydrophilic group on the surface with a thickness of 500 Å or more and 10 μm or more, and further has heat resistance at 150° C. for 3 hours or more. 3. The liquid crystal element according to claim 1, wherein the underlayer thin film is formed using a polymeric substance having a hydrophilic group on its surface. 4 The underlayer thin film has the general formula (III): ▲There are mathematical formulas, chemical formulas, tables, etc.▼(III) (In the formula, R^7 is 4 having at least 2 carbon atoms.
A valent group, R^8, has at least 2 carbon atoms.
2. The liquid crystal element according to claim 1, comprising a polymeric substance represented by the following formula. 5. A monomolecular film of an amphipathic polymeric material that can be converted into a polymeric material having the same structure as the polymeric material used as the underlying layer thin film by heat treatment is laminated on the underlying layer thin film. The liquid crystal element according to claim 1, comprising: 6. The liquid crystal element according to claim 1, wherein the underlayer thin film is made of SiO_2. 7. Claim 1, wherein the base layer thin film is made of Si_3N_4.
The liquid crystal element described. 8. The liquid crystal element according to claim 1, wherein the underlayer thin film is made of a metal oxide. 9. The liquid crystal device according to claim 8, wherein the metal oxide is Al_2O_3. 10 Claim 8 wherein the metal oxide is Ta_2O_5
The liquid crystal element described. 11. The liquid crystal device according to claim 8, wherein the metal oxide is TiO_2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20584890A JPH0490511A (en) | 1990-08-01 | 1990-08-01 | Liquid crystal element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20584890A JPH0490511A (en) | 1990-08-01 | 1990-08-01 | Liquid crystal element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0490511A true JPH0490511A (en) | 1992-03-24 |
Family
ID=16513715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20584890A Pending JPH0490511A (en) | 1990-08-01 | 1990-08-01 | Liquid crystal element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0490511A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0714762A (en) * | 1993-04-27 | 1995-01-17 | Internatl Business Mach Corp <Ibm> | Manufacture of circuit element by photolithography, thermostatic polyimide film, mixed polyimide and semiconductor device |
US7164455B2 (en) | 2002-10-25 | 2007-01-16 | Seiko Epson Corporation | Device, manufacturing method thereof, and electronic instrument with the device |
-
1990
- 1990-08-01 JP JP20584890A patent/JPH0490511A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0714762A (en) * | 1993-04-27 | 1995-01-17 | Internatl Business Mach Corp <Ibm> | Manufacture of circuit element by photolithography, thermostatic polyimide film, mixed polyimide and semiconductor device |
US7164455B2 (en) | 2002-10-25 | 2007-01-16 | Seiko Epson Corporation | Device, manufacturing method thereof, and electronic instrument with the device |
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