JPH048989A - Connecting device of metallic apparatus and nonmetallic flange - Google Patents
Connecting device of metallic apparatus and nonmetallic flangeInfo
- Publication number
- JPH048989A JPH048989A JP2112970A JP11297090A JPH048989A JP H048989 A JPH048989 A JP H048989A JP 2112970 A JP2112970 A JP 2112970A JP 11297090 A JP11297090 A JP 11297090A JP H048989 A JPH048989 A JP H048989A
- Authority
- JP
- Japan
- Prior art keywords
- flange
- metallic
- metal
- quartz
- airtightness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000013013 elastic material Substances 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 6
- 239000010935 stainless steel Substances 0.000 abstract description 6
- 229920001971 elastomer Polymers 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 239000011737 fluorine Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000003566 sealing material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003915 air pollution Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Flanged Joints, Insulating Joints, And Other Joints (AREA)
- Mutual Connection Of Rods And Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は金属製器材と非金属製フランジとの気密性を有
した接続装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an airtight connection device between a metal device and a non-metallic flange.
本発明は金属製器材と非金属製、例えば石英管の一端に
設けたフランジとを接続させて気密性を保持する構造に
おいて、その両者の間の接続のために加えられる締付は
力を分散させるための弾性を有する第1および第2の器
材と気密性を保持するためのシール材と締付は器材とか
ら接続装置を構成することにより、金属製器材と非金属
製フランジの気密性を向上して反応雰囲気の清浄な半導
体製造装置を提供可能とするもである。The present invention relates to a structure that maintains airtightness by connecting a metal device and a non-metallic device, such as a flange provided at one end of a quartz tube. By configuring a connecting device from first and second devices having elasticity to maintain airtightness, a sealing material to maintain airtightness, and a tightening device, airtightness between the metal device and the non-metallic flange can be maintained. This makes it possible to provide a semiconductor manufacturing apparatus with improved and clean reaction atmosphere.
従来、半導体製造装置の金属製器材を石英管の異種材料
を接続するには、
+1)第4図に示すように石英管2の先端部分とガス供
給系あるいは排気装置の金属製バイブ13との間を合成
樹脂性チューブ14を用いて接続する。Conventionally, in order to connect metal equipment of semiconductor manufacturing equipment to dissimilar materials such as quartz tubes, +1) As shown in FIG. A synthetic resin tube 14 is used to connect between the two.
(2)第5図に示すようにゴム型O−リング3をシール
材としてO−リング押え15.プレー目7を用いて石英
管2と金属製ボディ托と接続する。(2) As shown in FIG. 5, the rubber O-ring 3 is used as a sealing material and the O-ring retainer 15. The quartz tube 2 and the metal body holder are connected using the play holes 7.
(3)第6図に示すように石英管2の先端部分をフラン
ジにし、ゴム型O−リング3をシール材としてボルト7
を用いて石英管2と金属製ボディ16で接続する等の方
法が採用されている。(3) As shown in Fig. 6, the tip of the quartz tube 2 is made into a flange, and the rubber O-ring 3 is used as a sealing material for the bolt 7.
A method such as connecting the quartz tube 2 and the metal body 16 using a metal body 16 is adopted.
しかしながら、(1)の方法では合成樹脂性チューブの
気密性が良くないため外部リーク量が多く、また合成樹
脂性チューブから微粒子が発生する。However, in method (1), the airtightness of the synthetic resin tube is not good, so there is a large amount of external leakage, and fine particles are generated from the synthetic resin tube.
(21の方法ではボディ16のO−リング部分に石英管
を挿入するため、ガスの滞留するデッドゾーンができる
。さらには石英管の断面が円筒形に限られ、寸法精度が
不十分なことから外部リークの原因となる。(In method 21, a quartz tube is inserted into the O-ring part of the body 16, which creates a dead zone where gas accumulates. Furthermore, the cross section of the quartz tube is limited to a cylindrical shape, resulting in insufficient dimensional accuracy. This may cause external leaks.
(31の方法では方法(11,f21の欠点を改善した
任意の断面形状の石英管に通用できるが接続のために加
える締付は力により石英管が割れ易く実用性に乏しいと
いう多くの問題点を有していた。(Method No. 31 improves the shortcomings of Method (No. 11, f21) and can be applied to quartz tubes of any cross-sectional shape, but it has many problems such as the tightening applied for connection easily breaks the quartz tube due to force, making it impractical. It had
前記の問題点を解決するため、本発明においては、金属
製器材と非金属製、例えば石英管の一端に設けたフラン
ジを接続させて気密性を保持させるため、その両者の間
に接続のために加えられる締付は力を分散させるための
弾性を有する第1及び第2の器材と気密性を保持するた
めのシール材と締付は器材とから接M装置を構成した。In order to solve the above problems, in the present invention, in order to maintain airtightness by connecting a metal device and a flange provided at one end of a non-metallic material, for example, a quartz tube, a connecting device is provided between the two. A contact M device was constructed of first and second devices having elasticity for dispersing the tightening force applied to the device, a sealing material for maintaining airtightness, and the tightening device.
前記の構成の接続装置を用いることにより、金属製器材
と非金属製フランジを接続するために加えられる締付は
力を分散することができるため石英管の割れを防止する
ことができる。また気密性の優れた金属製器材は非金属
製フランジの接続ができる。By using the connecting device configured as described above, the force of the tightening applied to connect the metal equipment and the non-metallic flange can be dispersed, so that cracking of the quartz tube can be prevented. Additionally, metal equipment with excellent airtightness can be connected with non-metallic flanges.
以下に本発明の実施例を図面に基づいて説明する。第1
図は本発明の第1の実施例を示し、ガス供給系、石英管
2.ステンレス製丁字管12.ドア8及び排気装置より
構成される半導体製造装置を示すものである。第2図は
第1図の接続vtWA部の断面図である。第2図におい
て1は金属製器材で例えばステンレス製フランジを示す
、2は石英管を示し、この石英管2と金属製器材1とが
接続されるものである。3は気密性を保持するシール材
、例えばフッ素ゴム製O−リングを用いる。4及び5は
金属材と石英との直接接触を防止する締付は力を分散さ
せるための弾性を有する第1及び第2の器材で例えばフ
ッ素樹脂製シートを用いる。Embodiments of the present invention will be described below based on the drawings. 1st
The figure shows a first embodiment of the present invention, including a gas supply system, a quartz tube 2. Stainless steel T-shaped tube 12. This figure shows a semiconductor manufacturing apparatus composed of a door 8 and an exhaust device. FIG. 2 is a sectional view of the connection vtWA portion of FIG. 1. In FIG. 2, reference numeral 1 indicates a metal device, such as a stainless steel flange, and 2 indicates a quartz tube, to which the quartz tube 2 and the metal device 1 are connected. 3 uses a sealing material that maintains airtightness, such as a fluororubber O-ring. Reference numerals 4 and 5 refer to first and second devices having elasticity for dispersing force for tightening to prevent direct contact between the metal material and the quartz, and use, for example, fluororesin sheets.
6は27割りされた締付は器材であって凸部6aで石英
管2のフランジ部を金属製器材1に全周にわたつて均一
に押しつける機能を有し、ボルト7を用いて石英管2と
の金属製器材1を接続している。この際、接続のために
加えられる締付は力は弾性を有する第2の器材5の厚み
と締付は器材6に設けられている府記器材5を収める溝
の深さとの差によって与えられる。そのため接続の際は
ボルト7を用いて完全に締まるまで締付ければ良く、作
業者の経験や感に顧ることなく確実に接続を可能にして
いる。6 is a tightening device divided into 27 parts, which has the function of uniformly pressing the flange portion of the quartz tube 2 against the metal device 1 over the entire circumference with the convex portion 6a, and uses the bolt 7 to tighten the quartz tube 2. The metal equipment 1 is connected to. At this time, the tightening force applied for connection is given by the difference between the thickness of the second elastic device 5 and the depth of the groove provided in the device 6 in which the prefix device 5 is accommodated. . Therefore, when making a connection, it is sufficient to use the bolt 7 and tighten it until it is completely tightened, and the connection can be made reliably without regard to the experience or feeling of the operator.
本発明においては、石英管2のフランジ面は光学研磨を
施しである0表面粗さを小さくすることにより、気密性
を向上させて締付は力が小さくても済む、このため石英
のフランジに無理なカがかからなくて済む。In the present invention, the flange surface of the quartz tube 2 is optically polished to reduce the surface roughness, thereby improving airtightness and requiring less force for tightening. There is no need to apply unnecessary force.
第3図は本発明による別の実施例を示し、金属製器材1
の内部にシール部を冷却するための水を流す水路9を設
けた構造となっている。なお、これは例えば第1図の実
施例に示すように半導体製造工程において半導体ウェハ
1oと供給ガスとの反応は多くの場合、高温下において
実行される。この際、加熱系11からの熱によって接続
装置Aもがなりの高温度にさらされる。そのため前記シ
ール材の劣化による気密性の低下を防ぎ、さらにはシー
ル材からの放出ガスおよびガス透過を最小限に抑えられ
るように工夫したものである。FIG. 3 shows another embodiment according to the invention, in which the metal instrument 1
It has a structure in which a water channel 9 through which water flows to cool the seal portion is provided inside. Incidentally, as shown in the embodiment shown in FIG. 1, for example, in the semiconductor manufacturing process, the reaction between the semiconductor wafer 1o and the supplied gas is often carried out at a high temperature. At this time, the connecting device A is also exposed to a relatively high temperature due to the heat from the heating system 11. Therefore, deterioration of airtightness due to deterioration of the sealing material is prevented, and furthermore, the gas released from the sealing material and the gas permeation are minimized.
本発明で用いる締付は器材は、石英管、シール材、金属
製フランジとの密着面が全周にわたって押しつけられ、
密着状態が継続する構造であれば何ら制限されない、さ
らには締付は器材の溝深さと弾性を有する第2の器材の
厚みは気密性の観点から○−リングに適度なつぶししろ
を与えるようになっていれば良い、その信奉発明は上記
の実施例に限定されるものではなく、その要旨を逸脱し
ない範囲で変形実施することができる。In the tightening device used in the present invention, the contact surface with the quartz tube, sealing material, and metal flange is pressed over the entire circumference,
There are no restrictions as long as the structure maintains a close contact.Furthermore, tightening should be done in such a way that the groove depth of the device and the thickness of the second device with elasticity should be adjusted to provide an appropriate amount of compression for the ○-ring from the viewpoint of airtightness. The invention is not limited to the above embodiments, and may be modified without departing from the spirit thereof.
本発明により接続のために加える締付は力による石英管
の割れを防止することができる。また接続部分において
、
(11外部リーク量が極限まで低減されて大気汚染がな
くなる。The tightening applied for the connection according to the invention can prevent the quartz tube from cracking due to force. In addition, at the connection part, (11) the amount of external leakage is reduced to the utmost, eliminating air pollution.
(2)ガスの滞留するプントゾーンが存在しなくなる。(2) Punto zones where gas accumulates no longer exist.
(3) シール材からの放出ガス量を最小限にできる
。(3) The amount of gas released from the sealing material can be minimized.
ことにより、反応雰囲気を清浄化した半導体製造装置を
提供できる。As a result, it is possible to provide a semiconductor manufacturing apparatus in which the reaction atmosphere is purified.
第1図は本発明を実施した半導体製造装置の概略図、第
2図は第1図の接続装置A部の断面図、第3図は本発明
の別の実施例を示す断面図、第4図、第5図及び第6図
は従来の接続方法の断面図である。
・・・金属製器材
・・・石英管
・・・0−リング
5・・・第1及び第2の器材
・・締付は器材
・・ボルト
・ ・ドア
・・水路
・・半導体ウェハ
加熱系
ステンレス丁字管
金属製パイプ
合成樹脂性チューブ
0−リング押え
ボディ
プレート
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助
本光日月玄東方ヒしぼ妻距刺E9奮1のt1面図第3図
第
図
第
図
第
図1 is a schematic diagram of a semiconductor manufacturing apparatus embodying the present invention, FIG. 2 is a cross-sectional view of part A of the connection device in FIG. 1, FIG. 3 is a cross-sectional view showing another embodiment of the present invention, and FIG. 5 and 6 are cross-sectional views of conventional connection methods. ...Metal equipment...Quartz tube...0-ring 5...First and second equipment...Tightening equipment...Bolts...Door...Waterway...Semiconductor wafer heating system stainless steel T-shape metal pipe Synthetic resin tube 0-ring presser body plate Applicant Seiko Electronics Co., Ltd. Agent Patent attorney Takayuki Hayashi Sukehonko Niktsu Gen Toho Hishibo Tsuma Rensashi E9 Iku 1 T1 view No. Figure 3 Figure Figure Figure 3
Claims (4)
を接続させて気密性を保持せしめるフランジ構造におい
て、非金属製材料のフランジ部と、金属製器材との間に
弾性材を配置し、この弾性材を介して上記フランジ部を
金属製器材で挟持し、非金属製フランジと金属製器材と
が接続されていることを特徴とする金属製器材と非金属
製フランジの接続装置。(1) In a flange structure that connects a metal device and a flange made of a non-metallic material to maintain airtightness, an elastic material is placed between the flange portion of the non-metallic material and the metal device. A device for connecting a metal device and a non-metallic flange, characterized in that the flange portion is held between the metal devices via the elastic material, and the non-metallic flange and the metal device are connected.
あるいは両者に冷却のための水を通す水路を有すること
を特徴とする第1項記載の金属製器材と非金属製フラン
ジの接続装置。(2) The device for connecting a metal device and a non-metallic flange according to item 1, further comprising a water channel through which water for cooling passes through one or both of the metal device and the tightening device.
であることを特徴とする第1項または第2項記載の金属
製器材と非金属製フランジの接続装置。(3) The device for connecting metal equipment and a non-metallic flange according to item 1 or 2, wherein the surface roughness of the non-metallic flange surface is 1 μm or less.
材料よりなるチャンバーで構成され、前記第1項、第2
項又は第3項記載の接続装置を有することを特徴とする
半導体製造装置。(4) The reaction chamber is composed of a chamber made of a non-metallic material having the non-metallic flange, and
4. A semiconductor manufacturing device comprising the connection device according to item 1 or 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2112970A JPH048989A (en) | 1990-04-27 | 1990-04-27 | Connecting device of metallic apparatus and nonmetallic flange |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2112970A JPH048989A (en) | 1990-04-27 | 1990-04-27 | Connecting device of metallic apparatus and nonmetallic flange |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH048989A true JPH048989A (en) | 1992-01-13 |
Family
ID=14600115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2112970A Pending JPH048989A (en) | 1990-04-27 | 1990-04-27 | Connecting device of metallic apparatus and nonmetallic flange |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH048989A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6050631A (en) * | 1994-08-25 | 2000-04-18 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Impact energy absorbing structure for vehicle cabin |
-
1990
- 1990-04-27 JP JP2112970A patent/JPH048989A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6050631A (en) * | 1994-08-25 | 2000-04-18 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Impact energy absorbing structure for vehicle cabin |
US6126231A (en) * | 1994-08-25 | 2000-10-03 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Impact energy absorbing structure for vehicle cabin |
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