JPH0488689A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0488689A JPH0488689A JP20421690A JP20421690A JPH0488689A JP H0488689 A JPH0488689 A JP H0488689A JP 20421690 A JP20421690 A JP 20421690A JP 20421690 A JP20421690 A JP 20421690A JP H0488689 A JPH0488689 A JP H0488689A
- Authority
- JP
- Japan
- Prior art keywords
- current path
- center
- current
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000009826 distribution Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（イ〕産業上の利用分野
本発明は光情報処理、レーザ加工等に用いられる半導体
レーザ装置に関し、特にブロードエリア型半導体レーザ
装置に関する。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a semiconductor laser device used for optical information processing, laser processing, etc., and particularly to a broad area type semiconductor laser device.
（ロ）従来の技術
近年、半導体レーザが普及し、その応用分野が拡大する
につれて、光情報処理やレーザ加工等に用いられる高出
力の半導体レーザ装置が要求されている。(B) Prior Art In recent years, as semiconductor lasers have become widespread and their application fields have expanded, there has been a demand for high-output semiconductor laser devices used in optical information processing, laser processing, and the like.
現在、高出力半導体レーザとしては、ブロードエリア型
半導体レーザと半導体レーザアレイがある。この中で、
ブロードエリア型半導体レーザは、例えば、雑誌「電子
材料Ｊ １９８７年６月号第１０３頁ないし第１０６
頁の記事「大出力半導体レーザ」に示されているように
、通常電流狭窄層によって、数μｍの幅に制限される電
流通路幅を数十〜数百μｍに広げたものであり、これに
よりレーザ光を広い範囲に分布させ、活性層端面におい
て光集中による端面破壊を防ぎ高出力化を可能にしたも
のである。Currently, high-power semiconductor lasers include broad area semiconductor lasers and semiconductor laser arrays. In this,
Broad area semiconductor lasers are described in, for example, the magazine "Electronic Materials J, June 1987 issue, pages 103 to 106.
As shown in the article "High Power Semiconductor Laser" on page 1, the current path width, which is normally limited to a few micrometers, is expanded to several tens to hundreds of micrometers by a current confinement layer. By distributing laser light over a wide range, it is possible to prevent damage to the end face due to light concentration at the end face of the active layer, making it possible to achieve high output.
従来のブロードエリア型半導体レーザ装置の構造を第５
１！Ｉに示す。The structure of the conventional broad area type semiconductor laser device is
1! Shown in I.
第５図に示すように、ブロードエリア型半導体レーザ装
置は、ｎ型ＧａＡｓ基板（１）上にＡｌＧａＡｓからな
るｎ型クラッド層（２）、アンビープＡｌＧａＡｓ活性
層（３）およびｐ型ＡｌＧａＡｓクラッド層（４）のダ
ブルへテロ接合が設けられる。更に、ｐ型りラッビ層（
４）の上層にｐ型のキャップ層（５）が設けられ、その
上の両側に電流通路を形成するべく Ｓ ｉ Ｏ，から
なる絶縁膜〔６〕が形成され、それらの上にｐ型電極（
７）が形成される。又、基板（１）の下面にｎ型電極（
８）が形成されている。As shown in FIG. 5, a broad area semiconductor laser device consists of an n-type GaAs substrate (1), an n-type cladding layer (2) made of AlGaAs, an unbeep AlGaAs active layer (3), and a p-type AlGaAs cladding layer ( 4) double heterojunction is provided. Furthermore, a p-type Rabbit layer (
4) A p-type cap layer (5) is provided on the upper layer, an insulating film [6] made of SiO is formed on both sides of the cap layer to form a current path, and a p-type electrode is formed on top of the cap layer (5). (
7) is formed. In addition, an n-type electrode (
8) is formed.
第６図は上述したブロードエリア型半導体レーザ装置の
電流分布図である。この図から明らかなように、電流分
布は緩い山形を示しており、電流通路中央部が最も電流
密度の高い部分となる。このため、電流通路中央部の温
度は電流通路端部の温度に比べ高くなる。FIG. 6 is a current distribution diagram of the above-mentioned broad area type semiconductor laser device. As is clear from this figure, the current distribution shows a gentle mountain shape, and the central part of the current path has the highest current density. Therefore, the temperature at the center of the current path is higher than the temperature at the ends of the current path.
（ハ）発明が解決しようとする課題
上述した傾向は、電流通路を広げるほど強まり、結果的
に、電流通路を広げても熱飽和のために光呂力の伸びは
著しく鈍化するという問題があった。(c) Problems to be Solved by the Invention The above-mentioned tendency becomes stronger as the current path is widened, and as a result, even if the current path is widened, there is a problem in that the growth of the light power is significantly slowed down due to thermal saturation. Ta.
本発明は上述した問題点に鑑みなされたものにして、製
造が容易にして且つ電流通路幅を広げた効果が光出力の
向上に充分反映できるブロードエリア型半導体レーザ装
置を提供することをその課題とする。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a broad area semiconductor laser device that is easy to manufacture and can sufficiently reflect the effect of widening the current path width in improving optical output. shall be.
（ニ）課題を解決するための手段
本発明のブロードエリア型半導体レーザ装置は、電流通
路の中央部に、この電流通路と平行にストライブ状の絶
縁層を設けたことを特徴とする。(d) Means for Solving the Problems The broad area semiconductor laser device of the present invention is characterized in that a striped insulating layer is provided in the center of the current path and parallel to the current path.
（ホ）作用
電流通路の中央部分に絶縁層を設けることにより、電流
通路内の電流分布が均−或いは中央部をわずかに低くす
ることができる。(e) By providing an insulating layer in the central portion of the working current path, the current distribution within the current path can be made uniform or slightly lower in the central portion.
（へ）実施例 以下、本発明の一実施例を図面に従い説明する。(f) Example An embodiment of the present invention will be described below with reference to the drawings.
第１図および第２図は本発明の一実施例を示し、第１図
は斜視図、第２図は断面図、第３図はこの発明による半
導体レーザ装置の電流分布図である。1 and 2 show an embodiment of the present invention, in which FIG. 1 is a perspective view, FIG. 2 is a sectional view, and FIG. 3 is a current distribution diagram of a semiconductor laser device according to the invention.
尚、従来例と同一部分には同一符号を付す。Note that the same parts as in the conventional example are given the same reference numerals.
まず、ｎ型ＧａＡｓ基板（１）上に、ＭＯＣＶＤ法によ
り、ＡｌＧａＡｓ （Ａ１組成ｘ２０．４）からなるｎ
型クラッド層（２）、ＡＩＧａＡｓ（Ａ１組成ｘ＝０．
０７）からなるアンドープ活性層（３）、およびＡｌＧ
ａＡｓ （Ａ１組成Ｘ；０．４）からなるｐ型グラツド
層（４）のダブルへテロ接合が順次形成されている。更
に、ｐ型クラッド層（４）上には、ｐ型のキャップ層（
５）が設けられ、このキャップ層（５）上に電流通路（
ｌＯ）の幅を決定するために８１０．からなる絶縁膜（
６）が設けられている。First, an n-type film made of AlGaAs (A1 composition x 20.4) was deposited on an n-type GaAs substrate (1) by MOCVD.
type cladding layer (2), AIGaAs (A1 composition x=0.
07), and an undoped active layer (3) consisting of AlG
A double heterojunction of a p-type gradient layer (4) made of aAs (A1 composition X: 0.4) is successively formed. Furthermore, on the p-type cladding layer (4), a p-type cap layer (
5) is provided, and a current path (
810. to determine the width of lO). An insulating film consisting of (
6) is provided.
そして、キャップ層（５）上にｐ型ｔｌｉ（７）が、基
板＜１）下面にｎ型電極（８）が夫々設けられる。A p-type tli (7) is provided on the cap layer (5), and an n-type electrode (8) is provided on the lower surface of the substrate <1.
さて、本発明の特徴とするところは、この電流通路（ｌ
Ｏ）の中央部に電流通路（１０）と平行に数本から数十
水のストライブ状のＳｉ○、からなる絶縁層（９）を設
けたことにある。そして、この絶縁層（９）は、絶縁膜
（６）を形成する際に、同時にフォトリソグラフィの技
術を用いて容易に作成できることができるので、絶縁層
（９）形成のためにプロセスを追加する必要もなく簡単
に形成することができる。。Now, the feature of the present invention is that this current path (l
The reason is that an insulating layer (9) made of SiO in the form of several to several tens of water stripes is provided in the center of the current path (10) in parallel with the current path (10). Since this insulating layer (9) can be easily created using photolithography technology at the same time as forming the insulating film (6), an additional process is required to form the insulating layer (9). It can be easily formed without any need. .
而して、この電流通路（１０）に設けられたストライブ
状の絶縁層（９）によって、電流通路中央部の電流密度
は低減され、電流通路内の電流分布は第３１１１に示す
ように中央部が平坦になり、電流通路中央部の温度上昇
が和らげられる。The striped insulating layer (9) provided in this current path (10) reduces the current density in the center of the current path, and the current distribution in the current path is changed to the center as shown in No. 3111. The temperature rise at the center of the current path is reduced.
次に、本発明の実施例として、電流通路（ｌＯ）の幅を
６０，１５０．３００μ＋ｉの３種類のものに、その中
央部分において、電流通路幅の約２０〜３０％の領域に
ストライプ幅が５〜１０μｍのストライブ状のＳｉｎ、
からなる絶縁層（９）を電流通路（ｌＯ）と平行に数本
〜数十水設けたものを作成した。そして、比較のために
同じ電流通路（ｌＯ）の幅の従来の半導体レーザ装置を
用意し、両者の出力及び端面中央部の温度を測定した。Next, as an example of the present invention, the current path (lO) has three widths of 60, 150. 5-10 μm striped Sin,
An insulating layer (9) consisting of several to several tens of layers was prepared in parallel with the current path (lO). For comparison, conventional semiconductor laser devices having the same current path (lO) width were prepared, and the output and temperature at the center of the end face of both were measured.
その結果を第４図に示す。The results are shown in FIG.
こ１：で、白丸は本発明、黒丸は従来例の夫々最大出力
を示す。また、白抜きの三角形は本発明、黒で塗りつぶ
した三角形は従来の半導体レーザ装置であって、夫々レ
ーザへの注入電流密度を１ 、３ＫＡ／Ｃｌｌ１とした
ときの端面中央部の温度を示す。In this 1:, white circles indicate the maximum output of the present invention, and black circles indicate the maximum output of the conventional example. Furthermore, the open triangles represent the present invention, and the black triangles represent the conventional semiconductor laser device, and the temperatures at the center of the end face are shown when the current density injected into the laser is 1 and 3 KA/Cll1, respectively.
第４図から明らかなように、本発明においては、従来装
置に比べ、端面中央部の温度を低減することができ、従
来装置に比べ電流通路幅拡大の効果が光出力向上に反映
されていることが分かる。即ち、本実施例においては、
３００μｍのブリードエリア型半導体装置において、従
来装置に比して光出力は約ＩＷ向上している。As is clear from FIG. 4, in the present invention, the temperature at the center of the end face can be reduced compared to the conventional device, and the effect of expanding the current path width is reflected in the improvement in optical output compared to the conventional device. I understand that. That is, in this example,
In a 300 μm bleed area type semiconductor device, the optical output is improved by about IW compared to the conventional device.
（ト）発明の詳細
な説明したように、本発明によれば、電流通路中央部に
ストライブ状の絶縁層を電流通路と平行に設けることに
よレバ電流通路中央部の電流強度を下げ、中央部の温度
上昇を和らげることができる。従って、電流中央部の熱
飽和を防止することができ、ブロードエリア型の半導体
レーザ装置の電流通路幅の拡大にともない光出力を向上
させることができる。(G) As described in detail, according to the present invention, the current intensity at the center of the lever current path is reduced by providing a striped insulating layer in the center of the current path in parallel with the current path; It can moderate the temperature rise in the central area. Therefore, thermal saturation at the center of the current can be prevented, and the optical output can be improved as the current path width of the broad area type semiconductor laser device is expanded.
第１図ないし第２図は、本発明の一実施例を示し、第１
図は斜視図、第２図は断面図である。
第３図は本発明による半導体レーザ装置の電流分布を示
す特性図である。
第４図は本発明と従来装置との最大出力並びに端面中央
部の温度を示す特性図である。
第５図は従来の半導体装置を示す断面図である。
第６図は従来の半導体レーザ装置の電流分布を示す特性
図である。
Ｊ・・・基板、２・・クラッド層、３・・活性層、４・
・・クラッド層、５・・キャップ層、６・・・絶縁膜、
９・・・絶縁層、１０・・・電流通路。
第２図
第１図
第３図
第４
図
電浅漣Ｊ１９
第５
図
第
図1 and 2 show one embodiment of the present invention.
The figure is a perspective view, and FIG. 2 is a sectional view. FIG. 3 is a characteristic diagram showing the current distribution of the semiconductor laser device according to the present invention. FIG. 4 is a characteristic diagram showing the maximum output and the temperature at the center of the end face of the present invention and the conventional device. FIG. 5 is a sectional view showing a conventional semiconductor device. FIG. 6 is a characteristic diagram showing the current distribution of a conventional semiconductor laser device. J...Substrate, 2...Clad layer, 3...Active layer, 4...
... cladding layer, 5 ... cap layer, 6 ... insulating film,
9... Insulating layer, 10... Current path. Figure 2 Figure 1 Figure 3 Figure 4 Figure 4 Figure 5
Claims (1)
流通路の中央部に、この電流通路と平行にストライプ状
の絶縁層を設けたことを特徴とする半導体レーザ装置。(1) A semiconductor laser device of broad area type, characterized in that a striped insulating layer is provided in the center of the current path and parallel to the current path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20421690A JPH0488689A (en) | 1990-07-31 | 1990-07-31 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20421690A JPH0488689A (en) | 1990-07-31 | 1990-07-31 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0488689A true JPH0488689A (en) | 1992-03-23 |
Family
ID=16486761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20421690A Pending JPH0488689A (en) | 1990-07-31 | 1990-07-31 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0488689A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016092408A (en) * | 2014-10-31 | 2016-05-23 | 日亜化学工業株式会社 | Semiconductor laser element |
| US11451010B2 (en) | 2017-08-30 | 2022-09-20 | Panasonic Holdings Corporation | Semiconductor laser element |
-
1990
- 1990-07-31 JP JP20421690A patent/JPH0488689A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016092408A (en) * | 2014-10-31 | 2016-05-23 | 日亜化学工業株式会社 | Semiconductor laser element |
| US11451010B2 (en) | 2017-08-30 | 2022-09-20 | Panasonic Holdings Corporation | Semiconductor laser element |
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