JPH0487361A - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPH0487361A JPH0487361A JP2201222A JP20122290A JPH0487361A JP H0487361 A JPH0487361 A JP H0487361A JP 2201222 A JP2201222 A JP 2201222A JP 20122290 A JP20122290 A JP 20122290A JP H0487361 A JPH0487361 A JP H0487361A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- microcomputer
- circuit device
- multilayer substrate
- hybrid integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 18
- 230000015654 memory Effects 0.000 claims abstract description 17
- 229910000679 solder Inorganic materials 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 9
- 239000004840 adhesive resin Substances 0.000 claims description 8
- 229920006223 adhesive resin Polymers 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 238000003491 array Methods 0.000 abstract description 7
- 230000009191 jumping Effects 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/141—One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
Abstract
Description
【発明の詳細な説明】
(イ)産業上の利用分野
本発明は混成集積回路装置に関し、特にメモリおよびマ
イクロコンピュータを搭載した混成集積回路装置の配線
接続構造に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a hybrid integrated circuit device, and more particularly to a wiring connection structure for a hybrid integrated circuit device equipped with a memory and a microcomputer.
(ロ)従来の技術 第4図を参照して従来の混成集積回路装置を説明する。(b) Conventional technology A conventional hybrid integrated circuit device will be explained with reference to FIG.
第4図は混成集積回路装置の平面図を示し、混成集積回
路装置は絶縁金属基板(70)と、導電路(72)と、
中継バッド(74)と、外部リード用パッド(76)と
、ボンディングワイア(78)と、第1のゲートアレイ
(80)、マイクロコンピュータ(82)、メモリ(8
4)、第2のゲートアレイ(86)、その他の周辺集積
回路(88)等の複数の集積回路素子と、チップ抵抗(
90)等で構成されている。FIG. 4 shows a plan view of a hybrid integrated circuit device, which includes an insulated metal substrate (70), a conductive path (72),
Relay pad (74), external lead pad (76), bonding wire (78), first gate array (80), microcomputer (82), memory (8)
4), a plurality of integrated circuit elements such as a second gate array (86), other peripheral integrated circuits (88), and a chip resistor (
90) etc.
絶縁金属基板(70)は絶縁処理されたアルミニウム基
板が主として用いられ、この絶縁金属基板(70)に貼
着した銅箔をホトエツチングする等して所定形状に配線
パターンが形成され、後述する集積回路素子を固着する
ためのパッド、その電極を接続するためのパッド、中継
パッド(74)等の導電路(72)および外部リード用
パッド(76)等が形成されている。The insulated metal substrate (70) is mainly an insulated aluminum substrate, and a wiring pattern is formed in a predetermined shape by photo-etching copper foil attached to the insulated metal substrate (70), and an integrated circuit, which will be described later, is formed. Pads for fixing elements, pads for connecting their electrodes, conductive paths (72) such as relay pads (74), pads for external leads (76), and the like are formed.
上記した導電路(72)の所定位置には、第1および第
2のゲートアレイ(80)(86)、マイクロコンピュ
ータ(82)、メモリ(84)および周辺集積回路(8
8)を形成するチップ状の素子がAgペーストにより固
着され、チップコンデンサ、チップ抵抗素子等の電子部
品が接続強度、コンタクト抵抗を考慮して半田固着され
ている。At predetermined positions of the conductive path (72), there are first and second gate arrays (80) (86), a microcomputer (82), a memory (84), and a peripheral integrated circuit (86).
The chip-shaped elements forming 8) are fixed with Ag paste, and electronic components such as chip capacitors and chip resistive elements are fixed with solder in consideration of connection strength and contact resistance.
斯る大規模な混成集積回路装置は多種の電気機器に使用
され、近年ではプリンタコントローラとして6使用され
る。Such large-scale hybrid integrated circuit devices are used in a wide variety of electrical equipment, and in recent years have been used as printer controllers.
一般的なプリンタコントローラを混成集積回路装置とし
て実現する場合につき簡単に説明すると、例えば第1の
ゲートアレイ(80)はセントロニクス仕様のパラレル
・データ、センサ人力およびプリンタのフロントパネル
・スイッチ信号等を入力してマイクロコンピュータ(8
2)に入力する人力インターフェースとして機能し、第
2のゲートアレイ(86)はマイクロコンピュータ(8
2)の命令に基づいて文字フォントを印字ヘッドに出力
し、まtζキャリッジリターンあるいはフィードフォワ
ード信号等の制御信号等を出力する出力インターフェー
スとして機能する。また、マイクロコンピュータ(82
)には例えば16ビツトの人出力ホトと20ビツトのア
ドレス空間を有する80ビンのマイクロコンピュータが
使用され、メモリ(84)には例えば256にビット、
28ビンのメモリが使用される。To briefly explain the case where a general printer controller is realized as a hybrid integrated circuit device, for example, the first gate array (80) inputs Centronics specification parallel data, sensor input, printer front panel switch signals, etc. microcomputer (8
2), and the second gate array (86) functions as a human input interface to the microcomputer (86).
It functions as an output interface that outputs a character font to the print head based on the command 2) and also outputs control signals such as carriage return or feedforward signals. In addition, a microcomputer (82
) uses, for example, an 80-bin microcomputer with a 16-bit human output and a 20-bit address space, and the memory (84) has, for example, 256 bits,
28 bins of memory are used.
上記構造の混成集積回路装置はプリンタコントローラに
要求される小型化の要求に一応、応えることができ、ま
た絶縁金属基板を使用するため機器の放熱の問題も解決
されている。The hybrid integrated circuit device having the above structure can meet the demand for miniaturization required for printer controllers, and also solves the problem of heat dissipation from the device since it uses an insulated metal substrate.
(ハ)発明が解決しようとする課題
しかしながら、16ビツトのデータバスと20ビツトも
のアドレス空間を有し、しかも大規模構成されるディジ
タル回路の配線パターンは極めて複雑なものとなり、デ
ータバス、アドレスバス等の導電路は基板上の処断で、
ジャンピングワイア接続と称される技術を用いて相互に
接続しなければならなかった。(c) Problems to be Solved by the Invention However, the wiring pattern of a large-scale digital circuit that has a 16-bit data bus and a 20-bit address space has become extremely complex. Conductive paths such as
They had to be interconnected using a technique called jumping wire connections.
斯るジャンピングワイア接続技術を用いることにより、
比較的離間する導電路間の接続が行えるものの、極めて
多数のデータバス、アドレスバスを必要とするマイクロ
コンピュータ、メモリ等を搭載する混成集積回路装置に
おいては、第4図に示す如く、極めて多数のジャンピン
グワイアを必要としていた。By using such jumping wire connection technology,
Although connections can be made between relatively distant conductive paths, hybrid integrated circuit devices equipped with microcomputers, memories, etc. that require an extremely large number of data buses and address buses, as shown in Figure 4, require an extremely large number of data buses and address buses. Jumping wire was needed.
その結果、ジャンピングワイアを固着するためのパッド
数の増加による基板実装有効面積の低下および装置の小
型化の点で限界があり、大容量かつ超小型の混成集積回
路装置の実現が困難であった。As a result, the increase in the number of pads for fixing the jumping wires reduced the effective board mounting area, and there were limits to miniaturization of the device, making it difficult to realize large-capacity, ultra-small hybrid integrated circuit devices. .
(ニ)課題を解決するtこめの手段
本発明は上記課題に鑑みてなされたものであって、メモ
リおよびマイクロコンピュータ等の素子の周辺にアドレ
スバス、データバス等の配線パターンを形成した多層基
板を絶縁配置し、この多層基板を介してマイクロコンピ
ュータとその周辺回路素子間のアドレスバス、データバ
ス等の接続、並びにマイクロコンピュータおよびその周
辺回路素子と所定の導電路との接続を行うことによって
、ワイヤボンディングの数を著しく削減し高信頼並びに
高密度かつ小型の混成集積回路装置を掟供するしのであ
る。(D) Further means for solving the problems The present invention has been made in view of the above problems, and is a multilayer board on which wiring patterns such as address buses and data buses are formed around elements such as memory and microcomputers. By arranging them insulated and connecting address buses, data buses, etc. between the microcomputer and its peripheral circuit elements, and connecting the microcomputer and its peripheral circuit elements to predetermined conductive paths through this multilayer board, This significantly reduces the number of wire bonds and provides a highly reliable, high-density, and compact hybrid integrated circuit device.
(ホ)作用
多層基板に形成された導電路を介してアドレスバス、デ
ータバス等の接続が行われるため長スパンの接続が可能
になり、マイクロコンピュータとその周辺回路素子間の
接続、並びにマイクロコンピュータおよびその周辺回路
素子と所定の導電路との接続において、従来の如きジャ
ンピングワイア接続を不要とすることができる。(e) Since the address bus, data bus, etc. are connected via conductive paths formed on the functional multilayer board, long-span connections are possible, and connections between the microcomputer and its peripheral circuit elements, as well as the microcomputer Further, in connection between peripheral circuit elements and a predetermined conductive path, conventional jumping wire connections can be made unnecessary.
(へ)実施例
以下、本発明をプリンタコントローラ用の混成集積回路
装置に適用した実施例を第1図乃至第3図を参照して説
明する。(F) Embodiment Hereinafter, an embodiment in which the present invention is applied to a hybrid integrated circuit device for a printer controller will be described with reference to FIGS. 1 to 3.
第1図は実施例の平面図であり、混成集積回路装置は絶
縁金属基板(12) (但し、同平面図には当該金属基
板上に形成される絶縁樹脂層が現れているにずぎないの
で、後述の断面構造の説明に際しては、絶縁金属基板(
12)の参照番号を絶縁樹脂層にも使用する)、この絶
縁金属基板(12)上に所定のパターンに形成された導
電路(14)、外部リード用パッド(18)、第1のゲ
ートアレイ(24)、マイクロコンピュータ(26)、
メモリ(28)、第2のゲートアレイ(30)、その他
の周辺集積回路(32)、チップ抵抗(34)および本
発明に特徴的な多層基板(40)等で示されている。な
お、多層基板(40)下の絶縁金属基板(12)上にも
導電路(14)が形成されている。FIG. 1 is a plan view of the embodiment, and the hybrid integrated circuit device has an insulating metal substrate (12) (however, the insulating resin layer formed on the metal substrate is visible in the plan view). , when explaining the cross-sectional structure below, an insulated metal substrate (
12) (the reference number 12) is also used for the insulating resin layer), a conductive path (14) formed in a predetermined pattern on this insulating metal substrate (12), an external lead pad (18), and a first gate array. (24), microcomputer (26),
A memory (28), a second gate array (30), other peripheral integrated circuits (32), a chip resistor (34), a multilayer substrate (40) characteristic of the present invention, etc. are shown. Note that a conductive path (14) is also formed on the insulated metal substrate (12) below the multilayer substrate (40).
絶縁金属基板(12)にはアルミニウムが使用され、陽
極酸化により表面がアルマイト処理され、その−主面に
エポキシ樹脂あるいはポリイミド樹脂等の接着性を有す
る絶縁樹脂が被覆される。The insulated metal substrate (12) is made of aluminum, the surface of which is alumite-treated by anodizing, and its main surface is coated with an adhesive insulating resin such as epoxy resin or polyimide resin.
導電路(14)、外部リード用パッ)”(18)は前記
絶縁金属基板(12)に予め貼着しだ銅箔をホトエツチ
ングする等して所定のパターンに形成され、特にバス(
16)として示す導電路(14)により分断される一部
の導電路(14)はアルミワイア(22)によりジャン
ピング接続される。また、接地電位の導電路(14)は
基板金属(20)に接続される。The conductive paths (14) and external lead pads (18) are formed into a predetermined pattern by photo-etching copper foil that has been previously attached to the insulated metal substrate (12), and is particularly suitable for the bus (18).
Some of the conductive paths (14) separated by the conductive paths (14) shown as 16) are connected by jumping with aluminum wires (22). Further, a conductive path (14) at ground potential is connected to the substrate metal (20).
第1および第2のゲートアレイ(24)(30)、マイ
クロコンピュータ(26)、メモリ(28)、その他の
周辺集積回路(32)にはチップ素子が使用され、それ
らは所定の導電路(14)上にAgペーストにより固着
される。また、チップ抵抗(34)およびチップコンデ
ンサは所定の導電路(14)に半田固着される。Chip elements are used for the first and second gate arrays (24) (30), the microcomputer (26), the memory (28), and other peripheral integrated circuits (32), and they are connected to predetermined conductive paths (14). ) is fixed with Ag paste. Further, the chip resistor (34) and the chip capacitor are soldered and fixed to a predetermined conductive path (14).
なお、集積回路素子の機能は従来例の項で説明したので
省略する。Note that the functions of the integrated circuit elements have been explained in the conventional example section, so a description thereof will be omitted.
次に、第2図を参照して本発明に特徴的な多層基板(4
0)を説明する。Next, referring to FIG. 2, a multilayer substrate (4
0) will be explained.
多層基板(40)は厚さ0.6mm〜1.0mmのガラ
スエポキシ、紙エポキシ、紙フエノール、ポリイミド等
の樹脂により形成され、図示するように、第1および第
2のゲートアレイ(24)(30)、マイクロコンピュ
ータ(26)およびメモリ(28)のチップを露出させ
る孔(42)および切り欠き(42)が形成されている
。なお、以下の説明により明かとなるが、この孔(42
)はマイクロコンピュータ(26)等の集積回路素子の
周辺にポンディングパッドを多層に配列するために形成
されるものであって、実質的にその目的が達成される形
状であれば孔に限定されるものではない。The multilayer substrate (40) is made of resin such as glass epoxy, paper epoxy, paper phenol, polyimide, etc. with a thickness of 0.6 mm to 1.0 mm, and as shown in the figure, the first and second gate arrays (24) ( 30), a hole (42) and a notch (42) are formed to expose the microcomputer (26) and memory (28) chips. As will become clear from the following explanation, this hole (42
) are formed to arrange bonding pads in multiple layers around an integrated circuit element such as a microcomputer (26), and are limited to holes as long as they have a shape that substantially achieves the purpose. It's not something you can do.
また、この多層基板(40)の両面には周知の方法によ
り、その一部を図示するように、アドレスバス、データ
バス等の導電路(44)が形成され、適宜の位置でスル
ーホール(46)により接続されている。In addition, conductive paths (44) such as address buses and data buses are formed on both sides of the multilayer substrate (40) by a well-known method, as shown in part, and through holes (46) are formed at appropriate positions. ) are connected by.
所定の導電路(44)の一部は多層基板(4o)の周端
部に延在形成されて、絶縁金属基板(12)上に形成さ
れたパッドとボンディング接続されるパッド(48)が
形成され、他の所定の導電路(44)の一部は孔(42
)の周囲に延在形成されて、第1および第2のゲートア
レイ(24)(30)、マイクロコンピュータ(26)
およびメモリ(28)の電極とボンディング接続される
パッド(50)が形成されている。前記パッド(48)
およびそのワイヤボンディング工程は、多層基板(40
)の裏面の所定位置に半田バンブを形成し、絶縁金属基
板(12)上に形成された対応するパッドとバンブ接続
を行うようにすることにより省略することができる。A part of the predetermined conductive path (44) is formed to extend on the peripheral edge of the multilayer substrate (4o), forming a pad (48) that is bonded to a pad formed on the insulated metal substrate (12). A part of the other predetermined conductive path (44) is formed by a hole (42).
) are formed extending around the first and second gate arrays (24) (30), and the microcomputer (26).
A pad (50) is formed to be connected by bonding to the electrode of the memory (28). Said pad (48)
And its wire bonding process is a multilayer board (40
) can be omitted by forming a solder bump at a predetermined position on the back surface of the insulating metal substrate (12) and connecting the bump to a corresponding pad formed on the insulated metal substrate (12).
第3図を参照して本発明をさらに詳細に説明する。The present invention will be explained in more detail with reference to FIG.
同図は理解を容易にするため一部側面図で示した第1図
のI−1線断面図であり、本発明の混成集積回路装置は
金属基板(10)、絶縁樹脂層(12)、この絶縁樹脂
層(12)上に形成した導電路(14)および外部リー
ド用パッド(18)、Agペースト層(15)を介して
導電路(14)上に固着した第1および第2のゲートア
レイ(24)(30)、マイクロコンピュータ(26)
、メモリ(28)からなる主基板と、前記集積回路チッ
プのための孔(42) (側面図で示されている)を形
成した多層基板(40)と、この多層基板(40)を主
基板に絶縁接着する絶縁性接着樹脂層(60)で示され
ている。This figure is a cross-sectional view taken along the line I-1 in FIG. 1 partially shown as a side view for ease of understanding, and the hybrid integrated circuit device of the present invention includes a metal substrate (10), an insulating resin layer (12), A conductive path (14) and an external lead pad (18) formed on this insulating resin layer (12), and first and second gates fixed on the conductive path (14) via an Ag paste layer (15). Array (24) (30), microcomputer (26)
, a main board consisting of a memory (28), a multilayer board (40) formed with a hole (42) (shown in side view) for the integrated circuit chip, and this multilayer board (40) as a main board. It is shown with an insulating adhesive resin layer (60) that is insulatingly bonded to.
絶縁性接着樹脂層(60)はエポキシ系の樹脂の塗布に
より、ソルダレジストの塗布により、あるいは厚さ0.
5mm程度の和紙に接着性を有する例えばエポキシ系の
樹脂を含浸させ、多層基板(40)と略同形に切断した
接着樹脂含浸シートにより形成される。特に、接着樹脂
含浸シートは常温では接着性がないため取扱性に優れる
と共に、125°C程度に加熱することによりその含浸
樹脂が溶融し、さらに熱硬化して多層基板(40)と主
基板とを接着させるため、樹脂、レジストを塗布する場
合に比較して、良好な絶縁が得られるばかりか調整、塗
布の工程を省くことができ、多層基板(40)の接着工
程が簡素化される利点を有する。The insulating adhesive resin layer (60) is formed by coating an epoxy resin, by coating a solder resist, or by coating the layer with a thickness of 0.
It is formed from an adhesive resin-impregnated sheet that is made by impregnating Japanese paper of about 5 mm with an adhesive resin, such as epoxy resin, and cutting it into approximately the same shape as the multilayer substrate (40). In particular, the adhesive resin-impregnated sheet has no adhesive properties at room temperature, so it is easy to handle, and when heated to about 125°C, the impregnated resin melts and is further thermoset to bond the multilayer board (40) and the main board. Compared to the case of applying resin or resist, not only can better insulation be obtained, but also the adjustment and application processes can be omitted, which simplifies the process of adhering the multilayer substrate (40). has.
多層基板(40)は絶縁性接着樹脂層(60)の形成後
に主基板に形成したガイドボスト(図示しない)に係合
させる等して主基板上に配置され所定の温度条件で接着
される。そして、多層基板(40)の孔(42)により
露出される所定の領域にスタンプ法によりAgペースト
N (15)が形成され、そのAgペースト層(15)
上に第1および第2のゲートアレイ<24)(30)、
マイクロコンピュータ(26)、メモリ(28)等の集
積回路素子が配置される。After forming the insulating adhesive resin layer (60), the multilayer substrate (40) is disposed on the main substrate by engaging guide posts (not shown) formed on the main substrate and bonded under predetermined temperature conditions. Then, Ag paste N (15) is formed by a stamping method in a predetermined area exposed by the hole (42) of the multilayer substrate (40), and the Ag paste layer (15)
first and second gate arrays <24) (30) on top;
Integrated circuit elements such as a microcomputer (26) and a memory (28) are arranged.
そこで、主基板を加熱してAgペースト層(15)を溶
融させ、前記集積回路素子を導電路(14)上に固着す
ると、第1図に図示するように、第1および第2のゲー
トアレイ(24)(30)、マイクロコンピュータ(2
6)、メモリ(28)の周辺にはそれら集積回路素子の
電極と接続すべきパッドが2層に配列され、最短距離で
絶縁金属基板(12)上の導電路(14)あるいは多層
基板(40)上の導電路(44)の何れかにワイヤボン
ディングすることが可能になる。Therefore, when the main substrate is heated to melt the Ag paste layer (15) and fix the integrated circuit element on the conductive path (14), the first and second gate arrays are formed as shown in FIG. (24) (30), Microcomputer (2
6) Around the memory (28), pads to be connected to the electrodes of these integrated circuit elements are arranged in two layers, and the conductive paths (14) on the insulated metal substrate (12) or the multilayer substrate (40) are arranged at the shortest distance. ) on any of the conductive paths (44).
それら集積回路素子の電極と導電路(]4)を接続する
ボンディングワイヤを参照番号(36)、集積回路素子
の電極と多層基板(40)のパラI’ (50)を接続
するボンディングワイヤを参照番号(52)、さらに多
層基板(40)のパラl’ (48)と導電路(14)
を接続するボンディングワイヤを参照番号(54)で示
す。Reference number (36) is the bonding wire that connects the electrode of the integrated circuit element and the conductive path (]4), and reference number (36) is the bonding wire that connects the electrode of the integrated circuit element and the para I' (50) of the multilayer substrate (40). number (52), and the para l' (48) of the multilayer board (40) and the conductive path (14).
The bonding wire connecting the is indicated by reference number (54).
上記のように、多層基板に形成された導電路を介してア
ドレスバス、データバス等の接続が行われる本発明では
、主基板上の導電路(14)相互の接続であっても最大
2個所のワイヤボンディングにより行うことができる。As described above, in the present invention, where address buses, data buses, etc. are connected via conductive paths formed on a multilayer substrate, the conductive paths (14) on the main substrate can be connected at a maximum of two locations. This can be done by wire bonding.
また、多層基板(40)の導電路(44)は1個所のワ
イヤボンディングにより主基板上の任意の導電路(14
)に接続することができ、中継パッド数を著しく削減す
ることができる。また、これによりマイクロコンピュー
タおよびその周辺回路素子のレイアウトを規格化し、図
示するようにシンプルにすることができる。Further, the conductive path (44) of the multilayer board (40) is connected to any conductive path (44) on the main board by wire bonding at one location.
), and the number of relay pads can be significantly reduced. Furthermore, this allows the layout of the microcomputer and its peripheral circuit elements to be standardized and simplified as shown in the figure.
ここで、本発明の混成集積回路装置を実現する工程例を
以下に簡単に示す。Here, an example of the process for realizing the hybrid integrated circuit device of the present invention will be briefly described below.
半田印刷 → チップ付(チップ抵抗) に)半田溶融
(210°C) に)洗浄 に)接着樹脂含浸シートお
よび多層基板配置 時 多層基板接着(125°C)
中 Agペースト塗布 噂 ダイボンディング(集積回
路チップ) −>A gキュア(155°C) に)
ワイヤボンディング仲 樹脂コー) (125°C)
に)外部リード付に)ケーシング
以上、本発明を一実施例に基づいて説明したが、本発明
の、例えば絶縁性接着樹脂層の素材、レイアウトを規格
化すべきマイクロコンピュータおよびその周辺回路素子
の範囲、種類等は種々の変更が可能であって本発明が実
施例に限定される6のでないことは当業者に明らかであ
る。Solder printing → chip attachment (chip resistor) 2) Solder melting (210°C) 2) Cleaning 2) Adhesive resin impregnated sheet and multilayer board placement Multilayer board adhesion (125°C)
Medium Ag paste application Rumor Die bonding (integrated circuit chip) -> Ag cure (155°C))
Wire bonding agent Resin Co.) (125°C)
(b) with external leads) casing The present invention has been described above based on one embodiment, but the scope of the present invention is applicable to microcomputers and their peripheral circuit elements for which, for example, the material and layout of the insulating adhesive resin layer should be standardized. It is clear to those skilled in the art that various changes can be made in the types, etc., and the present invention is not limited to the embodiments.
(1)発明の効果
以上述べたように本発明によれば、
(1)ワイヤボンディング数が削減されるため工程が簡
素化される。また、これにより混成集積回路装置の信頼
性が向上する。(1) Effects of the Invention As described above, according to the present invention, (1) The number of wire bonding is reduced, so the process is simplified. This also improves the reliability of the hybrid integrated circuit device.
(2)長スパンの接続が可能になり、中継バンドが削減
されるため実装密度が向上する。(2) Long-span connections are possible, and relay bands are reduced, which improves packaging density.
(3)マイクロコンピュータおよびその周辺回路素子の
所定の電極が最短距離で接続されるため、配線容量に起
因する障害がない。(3) Since the predetermined electrodes of the microcomputer and its peripheral circuit elements are connected by the shortest distance, there is no problem caused by wiring capacitance.
(4)マイクロコンピュータおよびその周辺回路素子の
レイアウトを小型かつ規格化することができるため、混
成集積回路装置のパターン設計が容易になる。(4) Since the layout of the microcomputer and its peripheral circuit elements can be made smaller and standardized, pattern design of the hybrid integrated circuit device becomes easier.
第1図は本発明の一実施例の平面図、第2図は本発明に
特徴的な多層基板の平面図、第3図は第1図の1−1線
断面図、第4図は従来例の平面図。
(12)・・・絶縁金属基板、
(18)・・−外部リード用パッド
・ボンディングワイア、
素子、(34)−・チップ抵抗、
(42)・−・孔。
(14)(44)−導電路1
、 (22)(36)(52)(54)(24)〜(
32)・・集積回路
(40)・・・多層基板、FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a plan view of a multilayer board characteristic of the present invention, FIG. 3 is a sectional view taken along line 1-1 in FIG. 1, and FIG. 4 is a conventional Example top view. (12)...Insulated metal substrate, (18)...- Pad/bonding wire for external leads, element, (34)-- Chip resistor, (42)-- Hole. (14) (44) - Conductive path 1 , (22) (36) (52) (54) (24) - (
32)...Integrated circuit (40)...Multilayer board,
Claims (4)
置に少なくともメモリおよびマイクロコンピュータを固
着搭載した絶縁金属基板と、 共通アドレスバス、データバス等の配線パターン並びに
その周端部にボンディング・パッドを形成した多層基板
と、 前記多層基板を絶縁金属基板上に絶縁固着する縁性接着
樹脂層とを少なくとも備え、 前記多層基板の周端部に形成されたボンディング・パッ
ドと絶縁金属基板上に形成されたボンディング・パッド
とをワイヤボンデングすることにより、多層基板に形成
された共通アドレスライン、データライン等と絶縁金属
基板上に形成された前記導電路の一部とを接続したこと
を特徴とする混成集積回路装置。(1) A conductive path is formed in a predetermined shape, and an insulated metal substrate is fixedly mounted with at least a memory and a microcomputer in a predetermined position of the conductive path, and wiring patterns such as a common address bus and data bus, as well as bonding to the peripheral edges thereof. - At least includes a multilayer substrate on which a pad is formed, and an edge adhesive resin layer for insulating and fixing the multilayer substrate on an insulated metal substrate, and a bonding pad formed on a peripheral edge of the multilayer substrate and on the insulated metal substrate. The common address line, data line, etc. formed on the multilayer substrate are connected to a portion of the conductive path formed on the insulated metal substrate by wire bonding with the bonding pad formed on the multilayer substrate. Features of hybrid integrated circuit device.
CBあるいはポリイミド等の樹脂により形成されること
を特徴とする請求項1記載の混成集積回路装置。(2) The multilayer substrate is glass epoxy, paper epoxy, P
2. The hybrid integrated circuit device according to claim 1, wherein the hybrid integrated circuit device is formed of resin such as CB or polyimide.
ルダーレジストを用いたことを特徴とする請求項1記載
の混成集積回路装置。(3) The hybrid integrated circuit device according to claim 1, wherein an epoxy resin or a solder resist is used for the insulating adhesive resin layer.
素子を用いたことを特徴とする請求項1記載の混成集積
回路装置。(4) The hybrid integrated circuit device according to claim 1, wherein chip elements are used for the memory and the microcomputer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2201222A JPH0487361A (en) | 1990-07-31 | 1990-07-31 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2201222A JPH0487361A (en) | 1990-07-31 | 1990-07-31 | Hybrid integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0487361A true JPH0487361A (en) | 1992-03-19 |
Family
ID=16437362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2201222A Pending JPH0487361A (en) | 1990-07-31 | 1990-07-31 | Hybrid integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0487361A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996001498A1 (en) * | 1994-07-04 | 1996-01-18 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device |
US6674153B2 (en) * | 2001-12-14 | 2004-01-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device utilizing pad to pad wire interconnection for improving detection of failed region on the device |
JP2006245393A (en) * | 2005-03-04 | 2006-09-14 | Renesas Technology Corp | Semiconductor apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5717157A (en) * | 1980-05-15 | 1982-01-28 | Cts Corp | Multilayer ceramic package |
-
1990
- 1990-07-31 JP JP2201222A patent/JPH0487361A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5717157A (en) * | 1980-05-15 | 1982-01-28 | Cts Corp | Multilayer ceramic package |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996001498A1 (en) * | 1994-07-04 | 1996-01-18 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device |
CN1037134C (en) * | 1994-07-04 | 1998-01-21 | 松下电器产业株式会社 | Integrated circuit device |
US6303989B1 (en) | 1994-07-04 | 2001-10-16 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device on metal board with CPU power converter |
US6674153B2 (en) * | 2001-12-14 | 2004-01-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device utilizing pad to pad wire interconnection for improving detection of failed region on the device |
JP2006245393A (en) * | 2005-03-04 | 2006-09-14 | Renesas Technology Corp | Semiconductor apparatus |
JP4674852B2 (en) * | 2005-03-04 | 2011-04-20 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
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