JPH0481630A - Manufacture of sensor using resistance element - Google Patents

Abstract

PURPOSE:To form an accurate groove easily by machining and to manufacture efficiently a sensor using a resistance element, by digging a groove shaped in parallel crosses in a substrate and by forming a square-shaped groove in a flexible region. CONSTITUTION:Cutting is conducted by moving a dicing blade having the same width with the width L of a required groove, along courses shown by arrows. All of grooves 101 can be formed only by moving through the dicing blade eight times. In this way, an operating part 110, a flexible part 120 and a fixed part 130 are formed on a semiconductor substrate 100. On the occasion of this mechanical cutting, a control substrate 400 acts as a reinforcing plate. While the control substrate 400 is used originally for restricting the displacement of the operating part 110, the control substrate 400 serves for reinforcement when it is connected beforehand to a semiconductor wafer 100 and then the mechanical cutting for forming the groove 101 is executed. Thereby the semiconductor wafer 100 can be prevented from being damaged by the machining.

Description

Detailed Description of the Invention [Industrial Field of Application] The present invention relates to a method for manufacturing a sensor using a resistive element, and in particular, to a method for manufacturing a sensor using a resistive element, and in particular, a method for manufacturing a sensor using a resistive element formed on a semiconductor substrate. The present invention relates to a method of manufacturing a sensor that detects changes.

[Conventional technology]

As a sensor for force, acceleration, magnetism, etc., a resistance element is formed on a semiconductor substrate, and mechanical deformation is caused in this resistance element by the action of force, acceleration, magnetism, etc., and this mechanical deformation is converted into a change in electrical resistance. Sensors have been proposed to detect this. For example, International Publication No. WO38108522, an international application based on the Patent Cooperation Treaty, discloses a force/acceleration/magnetism detection device using a resistance element invented by the same inventor as the present inventor.

To manufacture such a sensor, first, impurity diffusion is performed on a semiconductor wafer to form a large number of resistance elements in predetermined positions, and the necessary wiring and grooves to provide flexibility are formed. conduct. This semiconductor wafer is then cut into a plurality of semiconductor pellets by a dicing process. Each pellet becomes an independent force sensor central unit. Thereafter, in order to manufacture an acceleration sensor, a weight body is joined to the action portion of this pellet, and in order to manufacture a magnetic sensor, a magnetic body is joined in place of the weight body.

Then, by placing this pellet in a package and performing wire bonding, the sensor chip is completed.

An efficient manufacturing method for mass producing such sensors is disclosed in Japanese Patent Application No. 1-135539. The feature of this method is that the process of connecting each pellet to an acting body (weight body or magnetic body) and a pedestal is performed in units of wafers, and the wafers can be divided into pellet units by a subsequent dicing process.

[Invention or problem to be solved]

An annular groove is formed in the semiconductor pellet that forms the core of the sensor described above. This groove part has a thinner wall thickness than other parts, so it has flexibility. This flexible annular portion will be referred to as a flexible portion, and the inside and outside thereof will be referred to as an acting portion and a fixed portion, respectively. Here, when an external force is applied to the acting part while the fixed part is fixed, the flexible part is bent. This deflection causes mechanical deformation of the resistance element formed in the flexible portion, and the applied external force is detected as a change in the electrical resistance of the resistance element.

Thus, the grooves formed on the semiconductor pellet play an important role in the basic detection principle.

However, with conventional manufacturing methods, it is difficult to efficiently form accurate grooves. Generally, mechanical methods and chemical methods are known as methods for forming grooves on a substrate. Mechanical methods include cutting or electrical discharge machining.
This is a method in which a groove is mechanically dug on a semiconductor substrate and then polished. Although this method has the advantage of being able to form very precise grooves, mechanically digging an annular groove for each sensor unit is inefficient, lacks mass productivity, and increases manufacturing costs. There is a problem with that.

On the other hand, the chemical method is a method of forming grooves by etching, and there are two methods: isotropic etching and anisotropic etching. Such a method using etching can simultaneously process a plurality of sensor units formed on a semiconductor wafer, so it is suitable for mass production and can reduce costs. However, there is a problem in that it is not possible to form grooves as accurately as with mechanical methods. For example, the depth of the grooves formed will vary due to variations in etching rate, resulting in non-uniform sensor sensitivity. Further, when isotropic etching is performed, the inside of the formed groove is rounded, so that sufficient distortion is not generated in response to an applied external force, making it difficult to obtain the desired sensitivity. On the other hand, if anisotropic etching/soching is performed, the problem of roundness inside the grooves will be resolved, or another problem will arise in that the orientation of crystal planes that can be etched is limited due to the nature of anisotropic etching. arise.

Therefore, the present invention provides a highly sensitive sensor using a resistive element.
The purpose is to provide a manufacturing method that allows efficient production.

[Means to solve the problem]

The invention in Box 1 is a method for manufacturing a sensor using a resistive element, in which a rectangular ring-shaped flexible region with a width is defined on a first substrate,
The area of action is either inside or outside of this square ring.
defining a fixed region on the other side; forming a resistive element in the flexible region on the first surface of the first substrate; digging a cross-shaped groove according to the position, and forming a rectangular groove made of a part of the cross-shaped groove in the flexible region to impart flexibility to the flexible region; bonding the first surface of the second substrate to the second surface of the second substrate; and cutting the second substrate to form a portion of the second substrate that is bonded to the active area of the first substrate. and a pedestal made of a portion of the second substrate and joined to the fixing region of the first substrate.

The invention in Box 2 provides a method for manufacturing a sensor using a resistive element, in which a plurality of unit areas are defined on a first substrate, and within each unit area, a rectangular ring-shaped flexible area with a width is defined. and defining an active area on either the inside or outside of the square ring and a fixed area on the other side, and placing a resistance element in each flexible area on the first surface of the first substrate. forming a plurality of grooves in the vertical and horizontal directions on the second surface of the first substrate, and in each unit area, four grooves are formed on each side of the working area or the fixing area; , allowing the flexible region to be flexible by the groove; bonding the first surface of the second substrate to the second surface of the first substrate; By cutting the substrate, in each unit area, an effecting body that is bonded to the active area of the first substrate and made up of a part of the second substrate is bonded to the fixed area of the first substrate. a pedestal comprising a portion of the second substrate; forming the first substrate and the second substrate;
The steps of separating each unit area and forming independent sensors for each unit area are performed.

A third invention of the present application provides a method for manufacturing a sensor using a resistive element, in which a plurality of unit areas are defined on a first substrate, and within each unit area, a rectangular ring-shaped flexible area with a width is defined. and defining an active area on either the inside or outside of the square ring and a fixed area on the other side, and placing a resistance element in each flexible area on the first surface of the first substrate. forming a groove on the first surface of the control board so that a portion of the first board within the active area can move with a predetermined degree of freedom; bonding to the first surface of the first board; and using the control board as a reinforcing plate;
A plurality of grooves are mechanically dug in the vertical and horizontal directions on the second surface of the first substrate, and in each unit area, four grooves are formed on each side of the working area or the fixed area, making the flexible region flexible by the groove; bonding the first surface of the second substrate to the second surface of the first substrate; and cutting the second substrate. By doing so, in each unit area, there is a working body that is joined to the working area of the first substrate and constitutes a part of the second substrate, and a working body that is joined to the fixed area of the first substrate and is made up of a part of the second substrate. forming a pedestal made up of a portion of the substrate; and separating the first substrate, the second substrate, and the control substrate into unit areas to form independent sensors. This is how it was done.

[For production]

According to the first invention of the present application, a rectangular groove is formed in the flexible region on the second surface of the first substrate. This rectangular groove is
Since it can be easily formed by digging a cross-shaped groove by mechanical processing, it becomes possible to efficiently form an accurate groove. Further, a part of the second substrate forms a weight body or a magnetic body, and another part forms a pedestal for supporting the first substrate. That is, before performing the dicing process, it is possible to form a weight body, a magnetic body, and a pedestal for each wafer.

Further, according to the second invention of the present application, a plurality of unit areas are defined on the first substrate, and the processing proceeds simultaneously for each of the plurality of unit areas, and eventually one unit area corresponds to one sensor unit. It will be configured. A plurality of grooves are dug in the vertical and horizontal directions on the second surface of the first substrate, so that in each unit area, four grooves are formed on each side of the action area or the fixed area. . This groove provides flexibility to the flexible region. Since the grooves can be formed vertically and horizontally in the shape of a base plate, they can be easily dug by mechanical processing, and accurate grooves can be efficiently formed.

Furthermore, according to the third aspect of the present invention, the control board is connected to the first board, and the work of digging a groove in the first board is performed while using this control board as a reinforcing plate. Damage to the first substrate can be prevented.

〔Example〕

The present invention will be described below based on illustrated embodiments.

Structure of Sensor First, the structure of a sensor using a resistive element, which is the object of the present invention, will be briefly explained. FIG. 1 is a structural sectional view showing an example of an acceleration sensor. The core unit of this sensor is the semiconductor pellet 10. A top view of this semiconductor pellet 10 is shown in FIG. The cross section of the semiconductor pellet 10 shown in the central part of FIG.
Corresponds to a cross section cut along the axis. This semiconductor pellet 10 includes, in order from the inside to the outside, a working part 11,
It is divided into three regions: a flexible section 12 and a fixed section 13. As shown by the broken line in FIG. 2, the semiconductor pellet 10
A cross-shaped groove is formed on the underside of the . Due to this groove, the flexible portion 12 has a thinner wall thickness and has flexibility. Therefore, if a force is applied to the acting part 11 while the fixed part ]-3 is fixed, the flexible part 12 will bend and mechanical deformation will occur. As shown in FIG.
zl to Rz4 are formed in a predetermined direction.

As shown in FIG. 1, a weight body 20 is provided below the action section 11.
are joined, and a pedestal 30 is joined below the fixed part 13. The bottom surface of the pedestal 30 is joined to the inner bottom surface of the package 40, and the semiconductor pellet 10 and the weight body 20 are supported by the pedestal 30. Weight body 20
is suspended inside. The package 40 is covered with a lid 41. A bonding pad 14 provided on the semiconductor pellet 10 is electrically connected to each resistance element within the pellet, and the bonding pad 14 and a lead 42 provided on the side of the package are connected to each other through a bonding ink. wire] 5.

When acceleration is applied to this sensor, an external force acts on the weight body 20. This external force is transmitted to the action part 11,
Mechanical deformation occurs in the flexible portion 12. This causes a change in the electrical resistance of the resistance element, and this change can be extracted to the outside via the bonding wire 15 and the lead 42.

The X-direction component of the force applied to the action part 11 is the resistance element Rxl.
~Rx4, the Y direction component is detected by the change in the electric resistance of the resistance elements Ryl to Ry4, and the Z direction component is detected by the change in the electric resistance of the resistance elements Rzl to Rz4. Since this detection method is not the main point of the present invention, a description thereof will be omitted here. For details, see International Publication Section W○88108 for international applications based on the Patent Cooperation Treaty.
Please refer to Publication No. 522, etc. Note that the above-mentioned sensor is an acceleration sensor, but in the case of a magnetic sensor, the weight body 20 may be made of a magnetic material.

When used as an acceleration sensor, if a large acceleration is applied, an excessive external force will act on the weight body 20.

As a result, a large mechanical deformation occurs in the flexible portion 12, and the semiconductor pellet 10 may be damaged. The same applies when a large magnetic field is applied to the magnetic sensor. To prevent such damage, the sensor shown in FIG.
．． ．． 52°53 are provided. The control member 51 controls the horizontal displacement of the weight body 20 so that it does not exceed the allowable value, and the control member 52 controls so that the downward displacement of the weight body 20 does not exceed the allowable value. control,
The control member 53 controls the upward displacement of the weight body 20 (actually, the action portion 11) so that it does not exceed a permissible value. Even if an excessive external force acts on the weight body 20 and the weight body 20 attempts to move beyond the above-mentioned allowable value, the weight body 20 will collide with these control members and be prevented from moving. in the end,
The semiconductor pellet 10 is not subjected to mechanical deformation exceeding a permissible value and is protected from damage.

Formation of grooves, which is a feature of the present invention The feature of the present invention is the method of forming grooves, which is shown by broken lines in FIG. The characteristics of this groove will be explained in detail with reference to FIG. Third
The figure is a bottom view of the semiconductor pellet 10, and FIG. 4 shows a cross section of the semiconductor pellet 10 taken along the cutting line 4--4. In FIG. 3, the broken lines are auxiliary lines for indicating the temporary sections on the pellet, and by using these auxiliary lines, the whole can be divided into 25 sections. Here, these 25 sections are represented by lowercase letters a - as shown in the figure.
Indicated by y. Here, the sections where trenches are dug are b, d,
f-j, 1. There are 16 sections: n, pt, v, and x, and these sections have thin walls. The central section m corresponds to the action section, and the surrounding sections g-i, 1. n, q-s
corresponds to the flexible part, and the surrounding sections a-e, f,
j, ko, p, t, u-y correspond to fixed parts. Therefore, the flexible portion necessarily becomes thinner and has flexibility. Originally, it is sufficient to form the groove only in the section corresponding to this flexible portion. In other words, rectangular grooves may be dug in eight sections around section m. As shown in FIG. 4, since the resistive element R is formed in a flexible portion, it is sufficient to allow distortion to occur in this portion. Therefore, there is a section corresponding to the fixed part.

d, f, j, p, t, V, x
There is no need to dig a trench. However, by digging a groove also in this fixed part, the mechanical groove digging work becomes very easy. That is, as shown in FIG. 5, the necessary groove width L(
For example 1. A dicing blade 60 having a width corresponding to 1 mm) is prepared, and the dicing blade 60 is moved as shown by the broken line arrow in the figure to perform the trench digging operation. In this example, the dicing plate 60
The necessary processing is completed by passing it over the semiconductor pellet 10 four times. In reality, processing is performed on a wafer basis in which a plurality of pellets are arranged in rows and columns, so it can be seen that this method of forming grooves is very efficient.

For reference, the method of forming grooves using a conventional method will be described below. As shown in FIG. 6, conventional semiconductor pellet 1
An annular groove is dug in the lower surface of 0', and the groove part is the flexible part 12', the inside part is the acting part 11', and the outside part is the fixed part 1.
3' (see specification of Japanese Patent Application No. 1-135539). A cross section of this semiconductor pellet 10' taken along cutting line 7a-7a is shown in FIG. 7(a). Forming such an annular groove by a mechanical method is extremely inefficient and unsuitable for mass production. Conventionally, grooves have been formed by a chemical method, that is, etching. However, when isotropic etching is performed, the grooves become rounded, as shown in FIG. 7(b).

In this way, if the groove becomes rounded, the flexible portion 12'
In this case, sufficient distortion is no longer generated, and the detection sensitivity due to the resistive element is inevitably reduced. On the other hand, in anisotropic etching,
Although the occurrence of roundness can be suppressed, the applicable wafer surface orientation is limited.

For example, this method cannot be used with silicon wafers because the (111) plane is not etched.

Furthermore, although etching is possible on the (110) plane, it is difficult to form grooves with accurate shapes.

In the end, only the (100) plane of a silicon wafer can be anisotropically etched, and various practical problems remain. For this reason, conventionally, grooves have been formed by a combination of isotropic etching and anisotropic etching. However, even in this case, as shown in FIG. 7(C), the grooves are slightly rounded and the detection sensitivity is inevitably lowered. In the method according to the present invention, as shown in FIG. 5, sharp grooves can be easily dug by cutting using the dicing plate 60, and accurate grooves can be formed more efficiently than conventional methods.

Manufacturing Process I According to the Invention The process for manufacturing the sensor shown in FIG. 1 by the method according to the invention will now be described in detail. First, as manufacturing process I, the process up to dicing the wafer will be described. First, a plurality of unit areas are defined on a semiconductor wafer. The semiconductor wafer is separately cut into unit areas in a subsequent dicing process, and each unit area becomes a semiconductor pellet having an independent sensor function. Figure 8 (a
) indicates a plurality of unit regions formed on the semiconductor wafer 100. The hatched area is one unit area, and each unit area is square. In this way, a large number of unit regions are actually formed on a disk-shaped semiconductor wafer, but for convenience of explanation, we will explain them here as shown in FIG.
4 on the square semiconductor wafer 100 as shown in b).
The following explanation will be continued by taking as an example the case where two unit areas are formed.

The steps from dicing to dicing will be explained below with reference to FIG. First, a resistance element is formed at a predetermined position on a semiconductor wafer 100 made of silicon or the like. As mentioned above, for convenience of explanation, this semiconductor wafer 100 has a square shape and is divided into four unit areas, so a resistance element is formed in each of the four unit areas.

This may be achieved by a method such as impurity diffusion. Figure 9 (
a) is a side sectional view showing a state in which a resistance element R is formed on a semiconductor wafer 100.

Next, a control board 400 as shown in FIG. 10 is prepared. This control board 400 includes an action section 110 that will be formed later.
This is to control the upward displacement of the tolerable range. As the material, a silicon substrate or a glass substrate may be used. The lower surface of this control board 400 is subjected to exactly the same processing for each of the four unit areas.

FIG. 10(b) is a bottom view of the control board 400 after processing, and FIG. 10(a) is a side sectional view showing the state cut along the cutting line 10a-10a. Square grooves 401 are formed at four locations on the lower surface. This groove 401
This is to control the degree of freedom in the upward direction of the displacement of 0, and the degree of freedom is determined by the depth of the groove 401. Another feature of this control board 400 is that the width is a little shorter than other boards, and a long vertical groove 402 is formed in the center. This is a contrivance to facilitate wire bonding, as will be described later. This control board 400 is bonded to the semiconductor wafer 100 as shown in FIG. 9(b). For this bonding, it is possible to use adhesive bonding, or to ensure reliable bonding, anodic bonding, which allows materials to be directly bonded, or silicon diffusion bonding (silicon diffusion bonding) is recommended.
It is preferable to use a technique such as bonding. That is, a voltage is applied between them, their temperature is raised, and they are joined without applying pressure.

Subsequently, as shown in FIG. 9(b), a semiconductor wafer]0
A groove 101 is formed on the lower surface of 0. This groove 101 is dug by the method that characterizes the present invention described above. 11th
The figure shows the state in which the groove 101 is formed in more detail.

The figure (b) is a bottom view of the substrate after the groove 101 is formed,
Figure (a) is a side cross-sectional view showing a state where this is cut along the cutting line 11a-11a. Specifically, a die sink plate with the same width as the required groove width was prepared as shown in Fig. 11 (b).
) and cut it by moving it along the path indicated by the dashed arrow. Of course, one groove may be formed by using a dicing blade thinner than the width and repeating the cutting process several times by shifting the position. In this embodiment, all the grooves 101 can be formed by passing the dicing blade eight times. In this way, the semiconductor substrate 100
A working part 110, a flexible part 120, and a fixed part 130 are formed in the . What should be noted here is that the control board 400 functions as a reinforcing plate when performing this mechanical cutting process. Originally, the control board 400 is a board used to limit the upward displacement of the action section 110, but this control board 400 is connected to the semiconductor wafer 100 in advance, and the mechanical process for forming the groove 101 is performed. By performing the cutting process, the control board 400 serves as a reinforcement, and it is possible to prevent the semiconductor wafer 100 from being damaged by mechanical processing. Note that this mechanical cutting process causes mechanical damage to the crystals in the inner layer of the groove 101, so it is advisable to perform chemical etching after this, if necessary, to remove the damaged layer.

Here, the advantages of the groove forming method, which is a feature of the present invention described above, will be described. Furthermore, since chemical etching is not required, grooves of the same depth can be formed, eliminating variations in sensitivity. Moreover, since the corners of the grooves have a sharp shape with almost right angles, sufficient distortion occurs, allowing highly sensitive detection.

Further, there are no restrictions on the crystal plane orientation to be used. Furthermore, although mechanical processing is performed, the processing requires only linear movement of the die sink plate, making it suitable for mass production.

Next, an auxiliary substrate 200 as shown in FIG. 12 is prepared. Since a portion of this auxiliary substrate 200 will ultimately constitute a weight body, and the remaining portion will constitute a pedestal, materials suitable for the weight body and the pedestal should be used. Furthermore, since it is bonded to the semiconductor wafer 100, it is preferable to use a material that has approximately the same coefficient of thermal expansion as the semiconductor wafer 100. For example, it is preferable to use the same silicon substrate or glass substrate as the semiconductor wafer 100. FIG. 12(b) is a top view of the auxiliary substrate 200 after processing, and FIG. 12(a) is a side sectional view showing the state cut along the cutting line 12a-12a. In this way, grooves 201 are formed in the vertical and horizontal directions on the upper surface of the auxiliary substrate 200. This is to make it easier to dice this substrate later.

In short, the position where this groove 201 is formed is determined by a portion 210 (4 in the figure) corresponding to the active portion 110 of the semiconductor wafer 100.
part) and a part 220 corresponding to the fixing part 130 (
It is sufficient if the position is such that the other parts are separated from the other parts. In other words, the auxiliary substrate 200 is stacked and bonded on the semiconductor wafer 100, and the auxiliary substrate 200 is
When only 00 is cut, the auxiliary board 200 becomes a weight body (
What is necessary is to separate it into a portion 210) and a pedestal (a portion 220 other than 210). Once such an auxiliary substrate 200 is prepared, it is bonded to the semiconductor wafer 100 as shown in FIG. 9(C). For this bonding, it is preferable to use a technique such as anodic bonding or silicon diffusion bonding.

Subsequently, as shown in FIG. 9(d), the auxiliary substrate 200 is cut along the grooves 201 with a dicing plate (prepare a blade thinner than the blade used to form the grooves 101). The cutting path 202 is formed on the opposite side to the groove 201 (lower side in the figure).

As a result, part 210 (becomes a weight body) and part 220
(which will become the pedestal) will be completely separated.

As shown in FIG. 12(b), the portion 210 (weight body) is located at four locations, but it is in a state where it is joined only to the acting portion 110 shown in FIG. 11(b). Further, the other portion 220 (pedestal) is in a state of being joined to the fixing part 130 shown in FIG. 11(b). Note that since the flexible portion 120 is floating from the auxiliary substrate 200, it is not bonded to any portion. In this way, the auxiliary board 2
By dicing 00, the weight body 210 and the pedestal 220 can be formed at the same time. Here, the pedestal 220 does not function as a pedestal that supports the fixed part 130, but also functions as a control member (the first
It also fulfills the function of the control member 51 in the sensor shown in the figure.

This tolerance range will be determined by the width of the cutting path 202 (if the width of the groove 201 is smaller than the width of the cutting path 202, it will be determined by the width of the groove 201). Note that the dicing process performed here is a dicing process for only the auxiliary substrate 200, and the semiconductor wafer 100 is still one piece.

Next, a control board 300 as shown in FIG. 13 is prepared. This control board 300 is for controlling the downward displacement of the weight body 210 within an allowable range. As for the material, like the auxiliary substrate 200, a silicon substrate or a glass substrate may be used.

The upper surface of this control board 300 is subjected to exactly the same processing for each of the four unit areas.

FIG. 13(b) is a top view of the control board 300 after processing, and FIG. 13(a) is a side sectional view showing the state cut along the cutting line 13a-13a. Square grooves 301 are formed at four locations on the top surface. This groove 301 corresponds to the weight body 21
This is to control the degree of freedom in the downward direction of the zero displacement, and the degree of freedom is determined by the depth of the groove 301. this! The IJ control board 300 is bonded to the auxiliary board 200 as shown in FIG. 9(e). It is preferable to use a technique such as anodic bonding or silicon diffusion bonding for this bonding as well.

Thereafter, as shown in FIG. 9(r), the upper part of the groove 402 is cut out using a cutting path 403. Furthermore, as shown in FIG. 9(g), by cutting each unit area along the cutting path 510, the four unit areas shown in FIG. 8(b) are separated, and the sensor central part 500 is completed. do. A perspective view of the completed sensor central portion 500 is shown in FIG. Control board 4
The reason why the horizontal width of the groove 00 is shortened and the vertically long groove 402 is formed is to expose the bonding pad 501 as shown in FIG.

Manufacturing process according to the present invention (2) Next, the process after dicing the wafer will be described. Once the sensor core 500 as shown in FIG. 14 is obtained, it is housed inside a package 600 as shown in the side sectional view of FIG. 15. That is, the bottom of the sensor core 500 may be adhered to the inside of the package 600. A lead for mounting is attached to the package 600, and a bonding bat 501 and a lead 6 are attached.
The inner end of 10 is bonded with a bonding wire 620. After this, the lid 63 is placed on the battery 600.
0 and seal it, the acceleration sensor is completed.

In this way, the manufacturing process for each wafer (the manufacturing process I mentioned above)
), the manufacturing process of each pellet after dicing (
The manufacturing process ① described above is very simple.

Other Embodiments Although one embodiment illustrating the present invention has been described above, the present invention is not limited to this embodiment only, and can be implemented in various ways.

For example, in the above-described embodiment, a method for manufacturing an acceleration sensor has been described, but completely similar steps can be performed when manufacturing a magnetic sensor. However, in the case of an acceleration sensor, the action body or weight body 210 that applies force to the action part
In contrast, in the case of a magnetic sensor, the acting body must be a magnetic material. Therefore, the auxiliary substrate 200 is partially made of magnetic material.

In the control board 300 shown in FIG.
is formed in each unit area, or alternatively, an elongated groove 30 is formed across the unit area as shown in FIG.
2 may be used. When forming the groove 302 with a die sink blade, the first
The embodiment shown in Figure 7 is easier to process.

In the above embodiment, as shown in FIG. 14, the electrical connection between the bonding bat 501 and the resistance element R (not shown in FIG. 14) is made by a diffusion layer inside the semiconductor wafer. . However, in a type of sensor center 500' shown in FIG. 16, in which a wiring layer 502 made of aluminum is formed on a wafer to electrically connect the two, the wiring layer 502 is Gap 5
It is necessary to secure 03. In this case, a control board 1f400' having a groove 404 as shown in FIG. 18 may be used instead of the control board 400 shown in FIG. 10. This embodiment is easier to process.

As mentioned above, in the above embodiment, for convenience of explanation, the eighth
Although we have described an example in which four sets of sensor cores are manufactured using a square wafer as shown in Figure (b), in reality, a larger number of sensors are manufactured using a disk-shaped wafer as shown in Figure (a). The central part can be manufactured.

Further, in the above-described embodiment, an example was described in which a sensor is manufactured in which the central part of the semiconductor pellet is the acting part, the periphery is the flexible part, and the periphery is the fixed part, but the present invention is different from this. Conversely, it is also applicable to manufacturing a sensor in which the central part is a fixed part, the periphery is a flexible part, and the periphery is a working part. FIG. 19 shows a side sectional view of the central portion of such a sensor. Semiconductor pellet 10 in this sensor
0' is the central part or the fixed part 130', and the peripheral part or the acting part 11
0', and the space between these forms a flexible portion 120'. In addition, a pedestal 220' is provided at the center to indicate the fixed part 130', and the weight body 2] is connected to the action part 110'.
0- will be located around it. Therefore, the control boards 300'' and 400'' are fixed at the center and function to control the movement of the weight body 210' and the action section]10-.

The main point of the present invention is to efficiently form a flexible portion by digging a rectangular groove.

Therefore, whether the acting part and the fixing part are located inside or outside is not a condition that limits the application of the present invention. Therefore, it goes without saying that the present invention can also be applied to a sensor having the structure shown in FIG.

〔Effect of the invention〕

As described above, according to the present invention, since the cross-shaped grooves are dug in the first substrate and the square grooves are formed in the flexible region, accurate grooves can be easily formed by mechanical processing. This makes it possible to manufacture sensors using resistive elements in an efficient manner suitable for mass production.

[Brief explanation of the drawing]

FIG. 1 is a side sectional view showing the structure of an acceleration sensor according to the present invention, FIG. 2 is a top view of a semiconductor pellet forming a part of the sensor shown in FIG. 1, and FIG. 3 is a semiconductor pellet shown in FIG. 2. A bottom view for explaining grooves in the pellet, FIG. 4 is a side cross-sectional view taken along cutting line 4-4 of the semiconductor pellet in FIG. 3, and FIG. 5 is a method for forming grooves in the semiconductor pellet shown in FIG. 2. FIG. 6 is a bottom view of a semiconductor pellet used in a conventional acceleration sensor, FIG. 7 is a side sectional view showing a conventional method of forming grooves in the semiconductor pellet shown in FIG. 6, and FIG.
The figure shows a state in which unit areas are defined on a semiconductor wafer used in the present invention, FIG. 9 is a process diagram showing a method for manufacturing the central part of an acceleration sensor according to an embodiment of the present invention, and FIG. 10 (a)
and (b) are side sectional views and bottom views showing the control board used in the method shown in FIG. 9, and FIGS. 11 (a) and (b).
In the method shown in FIG. 9, the side sectional view and bottom view showing the semiconductor pellet with the control board connected,
Figures (a) and (b) are side sectional views and top views showing the auxiliary substrate used in the method shown in Figure 9, and Figures 13 (a> and (b) are the auxiliary substrate used in the method shown in Figure 9. FIG. 14 is a perspective view showing the central part of the acceleration sensor manufactured by the method shown in FIG. 9, and FIG. 15 is the central part of the acceleration sensor manufactured by the method shown in FIG. FIG. 16 is a side sectional view showing a state housed in a package, FIG. 16 is a perspective view showing the central part of an acceleration sensor manufactured by a method according to another embodiment of the present invention, and FIGS. 17(a) and (b) are A side sectional view and a top view showing a control board used in a method according to another embodiment of the present invention, FIGS. 18(a) and (b) are side sectional views showing a control board used in the embodiment shown in FIG. 16. and a bottom view, and FIG. 19 is a side sectional view showing another embodiment of the central part of the acceleration sensor manufactured by the method according to the present invention. 10.10'... Semiconductor pellet, 11... Action part , 12... Flexible part, 13... Fixed part, 14... Bonding pad, 15... Bond ink wire, 20
... Weight body, 30 ... Pedestal, 40 ... Package, 41 ... Lid, 42 ... Lead, 51, 52.53
...Control member, 60...Die sink blade, R/resistance element, 100...Semiconductor wafer, 100'...Semiconductor pellet, 101...Groove, 110.11]...Action part, 120.120 -...Flexible part, 130.13CI
Fixed part, 200... Auxiliary board, 201. Groove, 202.
... Cutting path, 210, 210" ... Weight body, 22o. 220'... Pedestal, 300.300', 300"
・Control board, 301.302...Groove, 400°400
', 400''...Control board, 401 402...
Groove, 403... Cutting path, 404... Groove, 500°50
0'...Sensor central part, 50 bond dink pad,
502... Wiring layer, 503... Wiring layer gap, 51
0... Cutting path, 600... Package, 610...
・Lead, 620...Bonding wire, 630・
·lid. Figure 1

Claims (3)

[Claims] (1) defining a square ring-shaped flexible region with a width on the first substrate, defining an action region on either the inside or outside of the square ring, and a fixed region on the other side; forming a resistance element in the flexible region on the first surface of the first substrate; forming a cross-shaped groove on the second surface of the first substrate in accordance with the square ring position; forming a rectangular groove consisting of a part of the cross-shaped groove in the flexible region to impart flexibility to the flexible region; , bonding a first surface of a second substrate to the active area of the first substrate by cutting the second substrate; and a pedestal joined to the fixing region of the first substrate and made of a part of the second substrate. Manufacturing method of the sensor used. (2) Define a plurality of unit areas on the first substrate, define a square ring-shaped flexible area with width within each unit area, and define an action area on either the inside or outside of this square ring. forming a resistive element in each flexible region on the first surface of the first substrate; and defining a fixed region on the other side of the first substrate; A plurality of grooves are dug in the vertical and horizontal directions on the surface of the unit area, and in each unit area, four grooves are formed on each side of the working area or the fixed area, and these grooves provide flexibility to the flexible area. bonding a first surface of a second substrate to a second surface of the first substrate; and cutting the second substrate so that in each unit area, an effector that is joined to the action area of the first substrate and constitutes a part of the second substrate; and an action body that is joined to the fixed area of the first substrate and is a part of the second substrate. and a step of separating the first substrate and the second substrate into unit areas to form independent sensors, respectively. A method for manufacturing a sensor using a resistive element. (3) Define a plurality of unit areas on the first substrate, define a square ring-shaped flexible area with width within each unit area, and define an action area on either the inside or outside of this square ring. forming a resistor element in each flexible region on the first surface of the first substrate; and defining a fixed region on the first surface of the control substrate. After forming a groove in which a portion of the first substrate within the action area can move with a predetermined degree of freedom, the first surface of the control substrate is attached to the first surface of the first substrate. bonding, using the control board as a reinforcing plate, mechanically digging a plurality of grooves in the vertical and horizontal directions on the second surface of the first board, in each unit area; forming four grooves on each side of the working area or the fixed area, the grooves providing flexibility in the flexible area; and forming a second substrate on a second surface of the first substrate; bonding a first surface of the second substrate; and by cutting the second substrate, each unit area is bonded to the action area of the first substrate and is formed from a part of the second substrate. a pedestal joined to the fixing region of the first substrate and made of a portion of the second substrate; A method for manufacturing a sensor using a resistive element, comprising the steps of: separating a substrate and the control board into unit regions to form independent sensors.