JPH0478037A - Recording and reproducing device and recording, reproducing and erasing method - Google Patents

Abstract

PURPOSE:To reduce the effect of external vibration so as to perform scanning by forming a probe on a flexible part formed on a substrate. CONSTITUTION:A lower electrode 2 is provided on the substrate 1, and a supporting body 3 which is etched above and near the electrode 2 has a cavity part 8. An upper electrode 4, an insulating film 5 and a probe electrode material 6 are formed in a bridge state and the probe 7 for detecting a current caused by a tunnel effect is provided on the probe electrode 6. It is electrostatic force that drives the probe 7 in a direction vertical to the plane of the substrate 1, and the probe 7 is displaced by adding voltage to the electrodes 2 and 4. Thus, the stable scanning is performed in a state where the effect of the external vibration is hardly received.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a recording/reproducing device capable of high-density recording and a recording/reproducing/erasing method.

[Conventional technology]

The scanning tunneling microscope (hereinafter abbreviated as STM) utilizes the tunnel effect in which current flows through a barrier between a sharp conductive probe when it is brought close to the sample surface within a few nanometers, and is already well known. . [G, Binni
ng et al., He1veticaPh
Acta, 55, 726 (1982)
]The tunneling current that flows when a voltage is applied between the probe and the sample surface and the probe and the sample surface are brought close to each other within a few nm changes exponentially with the distance, so the tunneling current is kept constant and the probe is By scanning the matrix along the direction, the surface state can be observed with high resolution on the atomic order.

In addition, high-density recording and reproducing devices applying this STM principle have been published in Japanese Patent Laid-Open No. 63-161552 and Japanese Patent Laid-open No. 63-1.
This is proposed in Japanese Patent No. 61553. This uses a probe similar to ST~1 to perform recording by changing the voltage applied between the probe and the recording medium.The recording medium is made of a material that has switching characteristics with memory properties in voltage-current characteristics, such as chalcogen. A thin film layer of compounds and π-electron based organic compounds is used. Also, reproduction is performed by changing the tunnel resistance between the recorded area and the unrecorded area. As a recording medium using this recording method, recording and reproduction can be performed even if the surface shape of the recording medium changes depending on the voltage applied to the probe.

Conventionally, as a method for forming probes, a processing technology that uses semiconductor manufacturing process technology to create a fine structure on a single substrate rK, E, Peterson '5iliconas
a λ1 mechanical material
, Proceedings of the IEE
E, 70 (5), 420-457 (1982)
STM constructed using this method using the stomach
This is proposed in Japanese Patent Application Laid-Open No. 61-206148.

This is achieved by microfabrication using single-crystal Noricon as a substrate.
A parallel spring that can be moved slightly in the Y force direction is formed, and a tongue-like part with a probe formed is provided on its movable part, and an electric field is applied to the tongue-like part and the bottom part. ).

In addition, in JP-A-62-281138, JP-A-61
A storage device equipped with a transducer A/I in which multiple tongue-shaped portions are arranged in a manner similar to that disclosed in Japanese Patent No. 206148 is disclosed.

(Problem to be solved by the invention) However, in the conventional cantilever structure, (1) the probe is installed at the tip of the cantilever, so temperature changes during operation may cause the cantilever to heat up. The probe tends to expand or contract in the longitudinal direction due to expansion, or is deformed due to the difference in thermal expansion coefficient between the cantilever material and the material of the electrode provided on its surface, and the position of the probe tends to shift slightly.

(2) The cantilever beam on which the probe is formed is likely to warp or twist due to internal stress during manufacturing, making it difficult to form it with high precision. In addition, it is easy to deform due to internal stress relaxation due to changes over time.

Therefore, the cantilevered end is insufficient as a probe drive mechanism that requires precise position control at the atomic level.

For example, when multiple cantilever beams are arranged as disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 62-281138,
Although it is required to maintain the mutual positional relationship of the probes with high precision, it has been difficult to meet this requirement with cantilever ends.

(3) The above conventional example is manufactured by microfabrication using single-crystal silicon for the substrate, and the disadvantage is that the substrate is limited to conventional substrates, and the manufacturing process is large and takes a long time, making it expensive. was there.

(4) Furthermore, as a probe drive configuration, multiple probes are mounted on parallel hinges that move slightly in the XY force directions, so when driving each probe in the Z direction, if the rigidity of the parallel hinges is low, the electrostatic force When the probe is swung, the movement in the Z direction affects the movement in the XY force direction, and mutual interference may occur between the probes.

Therefore, an object of the present invention is to provide a recording device that is designed to be small, operates at low voltage, is not easily affected by temperature changes or external vibrations, can perform stable scanning, and enables high-density recording. An object of the present invention is to provide a reproducing device and a recording, reproducing, and erasing method.

[Means for solving problems]

” Two objectives are achieved by the invention as follows.

That is, the present invention includes a substrate, a bridge-like flexible section formed on the substrate, and a probe provided on the flexible section, and a drive mechanism for displacing the probe with respect to the substrate. A probe unit, a recording medium disposed close to the probe, means for adjusting the distance between the probe and the recording medium, and means for applying a voltage between the probe and the recording medium. This is a recording/playback device with special features.

The present invention provides a probe comprising a substrate, a bridge-like flexible portion formed on the substrate, and a probe provided on the flexible portion, and having a drive mechanism for displacing the probe with respect to the substrate. unit, bring the probe close to the recording medium,
This recording method is characterized in that recording is performed by applying a pulse voltage between a probe and a recording medium.

Further, the present invention includes a substrate, a bridge-like flexible portion formed on the substrate, and a probe provided on the flexible portion, and a drive mechanism for displacing the probe with respect to the substrate. Recording characterized by using a probe unit, bringing the probe close to a recording medium, performing recording by applying a pulse voltage between the probe and the recording medium, and reproducing the recording by applying a bias voltage. This is a playback method.

Further, the present invention includes a substrate, a bridge-like flexible portion formed on the substrate, and a probe provided on the flexible portion, and a drive mechanism for displacing the probe with respect to the substrate. Using a probe unit, the probe is brought close to the recording medium, recording is performed by applying a first pulse voltage between the probe and the recording medium, reproduction of the recording is performed by applying a bias voltage, and a second pulse voltage is applied. This is a recording/reproducing/erasing method characterized in that recording is erased by applying a pulse voltage.

[Effect]

The bridge-like flexible portion referred to in the present invention has a both-end fixed beam structure in which both ends of the flexible portion are fixed onto a substrate.

Specifically, the flexible portion is composed of a laminate having at least an electrode layer, an insulating layer, and an electrode layer for applying voltage to the probe, and the laminate is formed of at least two or more supports and a substrate. The structure is connected to the

The shape of the flexible portion may be arbitrary.

Since the probe is formed on a flexible part formed on a substrate, by increasing the natural frequency of the flexible part, it is possible to reduce the influence of external vibrations and allow the probe to scan. can.

In addition, the probe unit used in the present invention is manufactured by laminating an electrode layer, an insulating layer, and an electrode layer for applying voltage to the probe on a substrate, and then processing and etching them using photolithography technology. Therefore, the flexible portion will not be warped or twisted during the manufacture of the probe unit.

On the other hand, driving means suitable for the probe unit used in the present invention include driving means using electrostatic force and driving means using piezoelectric effect, but driving means using piezoelectric effect is better for controlling the probe stroke. This is particularly preferred because it can be made larger.

A recording/reproducing apparatus and a recording/reproducing/erasing method using each of the above-mentioned probe units will be described in detail in Examples below.

[Manufacturing Example 1 of Probe Unit] FIGS. 4 and 5 are a cross-sectional view and a plan view for explaining an embodiment of the probe unit of the present invention, in which a lower electrode 2 is provided on a substrate l. , furthermore, the support 3 is etched above and in the vicinity of the lower electrode 2,
It has a cavity 8. Thereby, the upper electrode 4, the insulating film 5, and the probe electrode material 6 are formed into a bridge shape.

Furthermore, a probe 7 is provided on the probe electrode to detect current due to the tunnel effect. Here the position of the probe is set at an equal distance from the support 3 of the bridge.

The force that drives the probe 7 in a direction perpendicular to the substrate plane is an electrostatic force, and is caused to be displaced by applying a voltage to the lower electrode 2 and the upper electrode 4. Furthermore, since the displacement mechanism of the probe is constituted by a bridge-like double-end structure, the probe can be displaced truly perpendicularly to the substrate surface.

Further, the insulating film 5 is provided to insulate the probe 7 where a tunnel current occurs, the probe electrode 6 for establishing conduction with the probe 7, and the upper electrode 4.

For example, if the length of the bridge is 200 μm, the width is 20 μm, the thickness is about 1 μm, and the distance between the electrodes is 3 μm, if a voltage of 50 V is applied between the lower and upper electrodes, the substrate surface will On the other hand, a displacement of about 1 μm can be generated in the perpendicular (Z-axis) direction. Further, with this structure, the resonance frequency in the flexible portion becomes as high as 200 KHz, and the probe having the flexible portion can scan with less influence of external vibrations.

The specific method for driving the probe unit of this structure is as follows.

First, an offset voltage of several tens of volts is applied, and when the voltage is reduced, the probe on the bridge-shaped both supports returns to its original position due to elasticity and moves in the direction of protrusion in the Z-axis direction, and conversely, the voltage is increased. As the probe progresses, the suction force becomes stronger and the probe moves in the retracting direction, making it possible to drive it in the Z-axis direction.

Next, a process for forming the probe unit shown in FIGS. 4 and 5 will be explained using FIG. 6.

First, Corning 705 with a plate thickness of 1 mm.
A lower electrode 2 was formed by depositing chromium to a thickness of 0.1 μm on a glass substrate 1 using a vacuum evaporation method and processing it using a photolithography technique.

(Step a) Next, copper is used as the support 3, and titanium is used as the upper electrode 4.
and a Noricon oxide film as the insulating film 10, and a probe electrode] Titanium as J and tungsten as the probe material 9 were successively sputtered to form copper 3.0 μm, titanium 0.2 μm, silicon oxide film 0.6 μm, titanium 0.2
30 μm of tungsten was deposited. (Step b) Next, by using a photolithography technique, the continuous five-layer film from the above-mentioned step was sequentially processed into the pattern of the upper electrode 4 shown in FIG. 5 using a hydrofluoric acid-based etching solution. Next, using photolithography technology, the lower electrode 2 except for the upper part is covered with photoresist, and the copper of the support 3 is over-etched using a hydrochloric acid-based etching solution to form the cavity d.
8 was formed. (Step C) In this example, since the support 3 is made of copper, it is necessary to control the pattern or the overetching state so that the support body 3 can be insulated from the lower electrode 2. However, this is not the case when the support body 3 is an insulator.

Next, the probe electrode 11 was processed into a pattern 6 in FIG. 5 using photolithography technology.

Subsequently, the insulating film 10 was processed into the pattern 5 in FIG. 5 using photolithography technology. Further, using photolithography technology, the probe material 9 was over-etched with an etching solution of caustic soda and red blood salt to form a tungsten probe 7, thereby obtaining a probe unit.

The above-mentioned probe unit is formed using photolithography technology and vacuum film forming technology, and inexpensive materials can be used for the substrate, and it can be manufactured in a remote location. Furthermore, if the probe unit has means for applying a voltage between the two-part electrode and the lower electrode, each probe is provided with a displacement mechanism in the Z direction,
It becomes possible to individually adjust the unevenness of the sample and the height deviation during probe formation. Furthermore, since it is a double-sided type, it has the advantage of being able to be displaced truly perpendicularly to the substrate plane, and also having an extremely high resonant frequency.

C Probe unit manufacturing example 2''JJ Figures 7 and 8 are a sectional view and a plan view for explaining a second embodiment of the probe unit of the present invention, in which a support 43 is placed on a substrate. is provided, and the support 4
3 has a cavity 49, and is in contact with the substrate 1 in the cavity,
A lower electrode 42 and a piezoelectric layer 44 are provided. Further, an upper electrode 45, an insulating film 46, and a probe electrode 47 are formed in a bridge shape on the support 43 and the piezoelectric layer 44. Furthermore, a probe 7 is provided on the probe electrode to detect current due to the tunnel effect. Here the probe positions are set at equal distances from the bridge supports. To drive the probe 7 in a direction perpendicular to the substrate plane,
It is sufficient to apply a voltage to the upper electrode 45 and the lower electrode 42 to displace the piezoelectric layer 44. By changing the positive and negative polarity of the upper electrode and the lower electrode, vertical fluctuation in the Z-axis direction becomes possible. Furthermore, since the displacement mechanism of the probe is constituted by a bridge-like double-end structure, the probe can be displaced truly perpendicularly to the substrate surface.

The insulating film 46 is provided to insulate the upper electrode 45 from the probe 7 that generates the tunnel current and from the probe electrode 47 for establishing conduction with the probe 7.

For example, if the length of the bridge is 200μm, the width is 20I1m, the thickness is about 1μm, and the height of the piezoelectric layer is 3μm, and a voltage of 30V is applied between the upper electrode and the lower electrode, the Z-axis A displacement of about 1 μm can be generated in the direction.

Next, the process of forming the probe unit shown in FIGS. 7 and 8 will be explained using FIG. 9. Figure 9 is the 8th
A stumbling block showing the cross-sectional view of the manufacturing process in Figure a-a, plate thickness 1.1m
Using a 7059 glass manufactured by Corning Co., Ltd. as the substrate 1, chromium was deposited to a thickness of 0.1 μm by vacuum evaporation, and the lower electrode 42 was formed by processing using photolithography. (Step a) Next, AIN, which is a piezoelectric material, is used as the support 43 and 44.
A film with a thickness of 3 μm was formed using RF magnetron sputtering. The conditions at this time were Terkerat AAN, back pressure 10
-', Alcon pressure 5XIO-3torr (N25
0%), RF power 5 W/crrr, and substrate temperature 350°C.

Further, on the supports 43 and 44, a titanium film is provided as an upper electrode 45, a silicon oxide film is provided as an insulating film 46, and a probe electrode 4 is provided.
7 is titanium, and probe material 48 is tungsten by continuous sputtering. Each layer has 3.0 μm of copper and 0.2 titanium
μm1 silicon oxide film 0.6 μm, titanium 0.2 μm,
Tungsten was deposited to a thickness of 3.0 μm.

(Step b) Next, by using a photolithography technique, the continuous five-layer film from the above-mentioned step was sequentially processed into the pattern of the upper electrode 45 shown in FIG. 8 using a hydrofluoric acid etching solution.

Further, the probe electrode 47 and the insulating film 46 were processed into the pattern shown in FIG. 8 using photolithography technology. The probe material 48 was similarly processed into the pattern of the probe electrode 47 shown in FIG. Thereafter, in order to obtain the cavity 49, a photoresist layer 61 was created with the cavity 49 on both sides of the piezoelectric layer 44 to be left open. (Steps C and cl (c is cc cross-sectional view of plan view d)) Subsequently, using photolithography technology, the support and the piezoelectric material 43. 44 was over-etched using a glacial acetic acid and nitric acid aqueous solution to form a cavity 49.

Here, in this embodiment, the support body 43. Since AAN, which is a piezoelectric material, is used for 44, it is necessary to control the pattern or over-etching state so as to be insulated from the lower electrode 42 and to obtain the shape of the cavity 49.

Finally, the tungsten probe 7 was formed by over-etching the probe material 48 with a caustic soda and red blood salt based etching solution using photolithography technology to obtain a probe unit. (Step e) [Manufacturing Example 3 of Probe Unit] A third embodiment of the present invention will be described using FIG. 1O.

In FIG. 10, 1 is a substrate, 3 is a support, and 8 is a cavity, and the upper part of the support constitutes a bridge-like support beam 70. The support beam 70 includes, from below, a beam structure layer 71, a lower electrode layer 72, a piezoelectric material layer 73, an upper electrode layer 74, and an insulating film 5.
, an electrode layer 6 for applying a voltage to the probe, and a conductive probe 7 through which a tunnel effect current flows. The probe 7 is provided at the center of the support beam 70.

The method of driving the probe 7 in a direction perpendicular to the substrate plane (Z direction) uses expansion and contraction of the piezoelectric material 73. That is, by applying a voltage to the polarized piezoelectric material 73 from the lower electrode 72 and the upper electrode 74, the supported beam is stretched in the longitudinal direction, and the supported beam is deflected due to the difference in expansion and contraction with the beam structure layer 71. Drive the probe 7.

FIG. 11 shows that a plurality of the above-mentioned probes are formed side by side.

An example of the formation process of the probe unit shown in FIG. 10 will be described using FIG. 12.

A glass plate with a thickness of 1.1 mm is used as the substrate 1, and on this, copper is used as the support 3, silicon oxide film is used as the beam structure layer 71, and titanium is used as the lower electrode 72. Copper 3.0 μm thick and silicon 3.0 μm thick each are deposited on this substrate by continuous sputtering. Oxide film 3μm, titanium 0.
A thickness of 2 μm was deposited. Next, aluminum nitride was deposited to a thickness of 3 μm as a piezoelectric material 73 by RF Macnetron sputtering. Furthermore, titanium was used as the upper electrode 74, a silicon oxide film was used as the insulating film 5, titanium was used as the electrode layer 6 for applying voltage to the probe, and tungsten was used as the probe material 75 by continuous sputtering. .2μm1 tungsten 3.0
μm was deposited.

(Step a) Next, using photolithography technology, the four layers from the probe material 75 to the upper electrode 74 of the continuous film in the above-mentioned step a are sequentially etched with a hydrogen fluoride etching solution as shown in FIG. 1O(a). It was processed into the pattern shape of the beam structure layer 71. Subsequently, the piezoelectric material (aluminum nitride) 73 was processed in the same manner using a glacial acetic acid nitric acid etching solution.

Furthermore, the three layers from the lower electrode 72 to the support 3 were sequentially processed using a hydrogen fluoride etching solution. Next, by photolithography, the area other than the upper part of the cavity 8 shown in FIG. 12(a) was covered with a photoresist, and the copper of the support 3 was over-etched using a hydrochloric acid-based etching solution to form the cavity 8. (Step 1)) Next, eight layers from the electrode layer 6 for applying voltage to the probe to the support 3 were sequentially processed into the pattern shown in FIG. 10(a) using the photolithography technique. Subsequently, the probe material 75 was over-etched using a caustic soda and red blood salt type etching solution to form a tungsten probe 7. (Step C) [Example 1] A recording/reproducing apparatus incorporating the probe units shown in Manufacturing Examples 1 to 3 will be described.

The sample is fixed to the Z-axis coarse movement piezoelectric element 103, performs coarse movement in the Z direction, and faces the probe unit 101! ,
The probe can be brought close to the surface of 02 to a distance where tunneling current can be detected. Z-axis coarse dynamic piezoelectric element 10
The inclination of the fixing member 10.4 to which 3 is fixed can be adjusted with three inclination adjustment screws 106.
The parallelism between the surface of the recording medium 102 and the surface of the recording medium 102 is corrected. Reference numeral 105 denotes a parallel hinohanestane, which has a structure in which two stages of parallel springs are orthogonally combined as shown in the plan view of Fig. 2, and can freely move the recording medium 102 placed in the center in the XY force directions. The drive is performed by the piezoelectric element 107. It is running on 1.08. With this configuration, the probe unit l-]
Since each probe on the recording medium 1.01 is equipped with a Z-axis drive mechanism, each probe moves independently in response to minute irregularities and inclinations on the surface of the recording medium 1.02 and cannot be maintained at a constant distance. ]05 enables scanning within the recording area corresponding to each probe.

FIG. 3 is a schematic diagram of the recording/reproducing apparatus of the present invention.

As the recording medium 102, one consisting of a recording layer made of a thin film having an electric memory effect (for example, a π-electron based organic compound or a chalcosaponide) and a conductive substrate is used.

The electric memory effect is a phenomenon in which a voltage exceeding a threshold value that causes a change in conductivity in the recording layer is applied between a probe and a conductive substrate, causing a change in conductivity in a minute area of the recording layer directly under the probe. Changes can be made and recorded,
Such a recording state requires a voltage that does not exceed the threshold (bias voltage).
This means that it will be maintained as long as is applied.

Reproduction of recording is performed by applying a bias voltage between the probe and the conductive substrate and utilizing the fact that the flowing current changes between the recording part and the non-recording part.

Further, erasing of recording is performed by applying a voltage equal to or higher than a threshold value that causes a change in conductivity in the recording layer between the probe and the conductive substrate.

As a recording medium, for example, squalium moochis-6-octane azulene is deposited as a recording layer on a gold epitaxial growth surface or a graphite arm-opening surface on a flat substrate such as glass or mica using the Rankmuir-Gronoetz method. , a cumulative film of two monomolecular films can be used.

When such a recording medium is used, for example, when 1V is applied between the probe and the conductive substrate, the current value is 10''A.
Below, the recording layer maintains an OF state (high resistance state).

Next, after applying a triangular wave pulse voltage that exceeds the threshold voltage, when a voltage of 1 cm is applied again, a current of about 10"'1 flows, and it becomes an ON state (low resistance state), and the ON state is recorded. Ru.

Furthermore, when a triangular wave pulse of the opposite polarity exceeding the threshold voltage for changing from the ON state to the OFF state was applied, and then a voltage of 1 to ' was applied, the current value became less than ] O'' A and the circuit went into the OFF state. Return records will be erased.

The recording and reproducing apparatus of the present invention will be explained based on FIGS. 1'3.

First, the recording medium 1.02 is moved by moving the parallel hinge station 1.05 according to a signal from the XY position control circuit 203 so that the desired recording position is directly under the probe of the probe unit 101, and the recording medium 1.02 is moved. OFF at 102
Recording is performed by applying a pulse voltage that exceeds a threshold value that changes from the ON state to the ON state.

At this time, a noise voltage of about 0.1 to 1 V is applied to the recording medium 102 by the / Approached and held.

The approach is first made by driving the Z-direction coarse-movement piezoelectric element 103 by a signal from the Z-direction coarse-movement drive circuit 201 to within the movement range of the Z-axis drive mechanism of each probe of the probe unit 1.01, and then is drawn into the tunnel region for each probe.

The drawing is performed by feeding back the tunnel current detected by the tunnel current detection circuit 204 corresponding to each probe through the Z-direction servo circuit 202 of the Z-direction drive mechanism of each probe, and each probe and recording medium are Controlled by distance.

During recording, a recording signal is sent from the control circuit 207 to the recording/erase signal generator 205, and a recording pulse voltage is applied to each probe to perform recording.

At this time, a hold circuit is provided in the Z-direction servo circuit 202 to hold the drive voltage of the Z-direction drive mechanism of the probe unit so that the distance between the probe and the recording medium does not change due to voltage application.

During reproduction of recording, the probe is moved to a desired reproduction position on the recording medium 102 in the same way as during recording, and the change in tunnel current between the recorded and non-recorded portions between the probe and the surface of the recording medium 102 is detected. playback is performed.

At this time, the reproduced signal passes through the tunnel current detection circuit 204, undergoes signal processing by the control circuit 207, and is reproduced as data.

Furthermore, when erasing a record, the probe is moved over the recorded hit to be erased, and an erase pulse voltage of opposite polarity to that during recording is applied from the record/erase signal generator 205 to perform erasure, as in the case of recording. At that time, the probe is Z direction servo circuit 2
The distance to the recording medium is maintained by the halt circuit 02.

As explained above, the recording and reproducing apparatus of the present invention using the above-mentioned probe unit operates at low voltage and is not affected by temperature changes or external fluctuations and can perform stable scanning. This enables high-density recording.

〔Effect of the invention〕

(1) The probe unit used in the present invention has a symmetrical structure in which the probe is provided in the center of a bridge-like flexible part provided on the substrate, and both ends of the flexible part are restrained, so during operation There is no deformation due to thermal expansion in the longitudinal direction due to temperature changes or a difference in thermal expansion coefficient between the flexible member material and the electrode material, and the position of the probe hardly shifts.

In addition, the beam can be formed with high accuracy without warping or twisting due to internal stress during manufacturing.

(2) The probe unit used in the present invention is not limited to 81 substrates as in the conventional example, but can use a normal 7059 glass substrate, so it can be manufactured at a very low cost.

(3) As a means of driving the probe unit, the driving force in the Z-axis direction can be increased by particularly utilizing piezoelectric effect, and even if the bridge-like structure is used, the amount of displacement in the Z-axis direction can be kept the same as that of a cantilever beam. I can do it.

Furthermore, since the resonant frequency can be increased, the probe can receive external vibrations and can also respond to faster scanning.

(4) The recording/reproducing device of the present invention operates at low voltage, is not affected by temperature changes or external fluctuations, can perform stable scanning of the probe, and can perform high-density recording. shall be.

[Brief explanation of the drawing]

1, 2, and 3 are block diagrams of the recording/reproducing apparatus of the present invention; FIGS. 4 and 5 are sectional views and plan views of the probe unit of the first embodiment of the present invention; FIG. 6; (a) to (d) are main process diagrams for forming the probe unit shown in Figs. 4 and 5, and Figs.
9(a) to (e) are main process diagrams for forming the probe unit of FIGS. 7 and 8, and FIG. 10 is a probe of the third embodiment. A sectional view and a plan view of the unit, FIG. 11 is an explanatory diagram showing a plurality of probe units arranged, and FIGS. 12(a) to (c) are main process diagrams for forming the probe unit of FIG. 10. 1 ・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・ Board 2.42
・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・Lower electrode 3.43・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
・・Support 4.45・・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・Top electrode 5.
46・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・Insulating film 6.47 ・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・Probe electrode 7・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・Probe 8.49・・・・・・・・・・・・
・・・・・・・・・・・・・・・・・・Cavity part 9
．． 75・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・・・・Probe material 44・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
......Piezoelectric layer 61...
・・・・・・・・・・・・・・・・・・・・・・・・
......Photoresist layer 71...
・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・Beam structure 1, 01 1, 05 ],, O9

Claims (24)

[Claims] (1) A probe unit that includes a substrate, a bridge-like flexible section formed on the substrate, and a probe provided on the flexible section, and a drive mechanism for displacing the probe with respect to the substrate. , comprising a recording medium disposed close to the probe, means for adjusting the distance between the probe and the recording medium, and means for applying a voltage between the probe and the recording medium. Recording/playback device. (2) The recording and reproducing apparatus according to claim 1, further comprising means for moving the recording medium relative to the probe. (3) The probe unit has a first electrode on a substrate, the flexible part is insulated from the first electrode by a cavity, and a voltage is applied to the second electrode layer, the insulating layer, and the probe. The recording/reproducing device according to claim 1, comprising a laminate of electrode layers for. (4) The probe unit has a first electrode on a substrate, the first electrode is connected to a flexible part via a piezoelectric layer, and the flexible part is connected to a second electrode layer and an insulating layer. and a laminate of electrode layers for applying voltage to the probe (claim (1)).
The recording/reproducing device described in . (5) The flexible portion comprises a laminate of a beam structure layer, a first electrode layer, a piezoelectric layer, a second electrode layer, an insulating layer, and an electrode layer for applying voltage to the probe. The recording/reproducing device according to (1). (6) The recording/reproducing device according to (1), wherein the recording medium has an electric memory effect. (7) The recording/reproducing device according to (1), wherein the recording medium has a recording layer provided on a substrate electrode. (8) The recording/reproducing device according to (7), wherein the recording layer contains an organic compound. (9) The recording/reproducing device according to (7), wherein the recording layer includes a monomolecular film or a monomolecular cumulative film of an organic compound. (10) A probe unit that includes a substrate, a bridge-like flexible section formed on the substrate, and a probe provided on the flexible section, and a drive mechanism for displacing the probe with respect to the substrate. A recording method characterized in that recording is performed by bringing a probe close to a recording medium and applying a pulse voltage between the probe and the recording medium. (11) The recording method according to (10), wherein the recording medium has an electric memory effect. (12) The recording method according to (10), wherein the recording medium includes a recording layer provided on a substrate electrode. (13) The recording method according to (10), wherein the pulse voltage is a voltage exceeding a threshold voltage that causes a change in conductivity in the recording medium. (14) A probe unit that includes a substrate, a bridge-like flexible section formed on the substrate, and a probe provided on the flexible section, and a drive mechanism for displacing the probe with respect to the substrate. A recording and reproducing method characterized in that recording is performed by bringing a probe close to a recording medium, applying a pulse voltage between the probe and the recording medium, and reproducing the recording by applying a bias voltage. . (15) The recording/reproducing method according to (14), wherein the recording medium has an electric memory effect. (16) The recording/reproducing method according to (14), wherein the recording medium has a recording layer provided on a substrate electrode. (17) The recording/reproducing method according to (14), wherein the pulse voltage is a voltage exceeding a threshold voltage that causes a change in conductivity in the recording medium. (18) The recording/reproducing method according to (14), wherein the bias voltage is a voltage that does not exceed a threshold voltage that causes a change in conductivity in the recording medium. (19) A probe unit comprising a substrate, a bridge-like flexible portion formed on the substrate, and a probe provided on the flexible portion, and a drive mechanism for displacing the probe with respect to the substrate. , the probe is brought close to the recording medium, recording is performed by applying a first pulse voltage between the probe and the recording medium, reproduction of the recording is performed by applying a bias voltage, and the second pulse is applied. A recording/reproducing/erasing method characterized by erasing records by applying a voltage. (20) The recording/reproducing/erasing method according to (19), wherein the recording medium has an electric memory effect. (21) The recording/reproducing/erasing method according to (19), wherein the recording medium has a recording layer provided on a substrate electrode. (22) Claim (19) wherein the first pulse voltage is a voltage exceeding a threshold voltage that causes a change in conductivity in the recording medium.
Recording playback erasing method described in . (23) The recording/reproducing/erasing method according to (19), wherein the bias voltage is a voltage that does not exceed a threshold voltage that causes a change in conductivity in the recording medium. (24) Claim (19) wherein the second pulse voltage is a voltage exceeding a threshold voltage that causes a change in conductivity in the recording medium.
Recording playback erasing method described in .