JP2981788B2 - Information processing apparatus using scanning probe microscope, information processing method and surface matching method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an information processing apparatus using a scanning probe microscope (hereinafter abbreviated as SXM) having a mechanism for correcting the inclination between the scanning surface of a probe and the surface of a recording medium, an information processing method, and inclination correction. About the method.

[0002]

2. Description of the Related Art In recent years,
With the development of the information society, large-capacity memories are being developed. Recently, scanning tunneling microscopes (STMs)
(For example, Japanese Patent Application Laid-Open No. 61-80636, U.S. Pat. No. 457).
No. 5822). G. FIG. STM developed by Binning et al. [G. Binning et a
l. , Helvetica Physica Act
a, 55 , 726 (1982)] takes advantage of the fact that a tunnel current flows when a voltage is applied between a metal probe (probe electrode) and a conductive sample to reduce the distance between them to about 1 nm. And observe the surface state of the sample. This current is very sensitive to changes in the distance between them,
By scanning the sample while keeping the tunnel current constant and measuring the change in the distance between the probe and the sample, or measuring the change in the tunnel current when scanning while keeping the distance constant, The surface condition of the sample can be known. The in-plane direction resolution at this time is about 0.1 nm. Therefore, if the STM technology is applied, high-density recording / reproduction on the atomic order (sub-nanometer) can be realized (for example, JP-A-63-204531, JP-A-63-204531)
161552 and 63-161553). On the other hand, with the development of STM technology, the surface condition of the sample is measured by scanning the probe over the sample surface while detecting various interactions depending on the distance between the other probe and the sample, not limited to the tunnel current. Technology (Squid SX
M) have been proposed one after another. In the case of using SXM, high-density recording / reproduction is possible as in the case of using STM.

As described above, high-density recording / reproduction should be achieved by using the SXM technique in principle, but there are various problems in realizing it. Hereinafter, S
The problems in SXM will be described using TM as an example.

[0004] First, it is necessary to scan the probe parallel to the surface of the recording medium. When this condition is not satisfied, that is, when the recording medium is tilted and placed on the sample table, the observed surface shape is distorted, or the probe collides with the recording medium surface, or conversely, the recording is performed. It may be too far from the media surface to become uncontrollable. The scanning range (the area used for recording information) is relatively small, and the amount of movement of the probe in the vertical direction (hereinafter referred to as the Z-axis direction) caused by the inclination of the recording medium is within the Z-axis fine movement control range of the probe. (For example, 1 μm or less), it is possible to decompose only the probe movement caused by the actual structure of the surface of the recording medium from the movement of the probe using an electric filter. Is equipped with a filter for removing various frequency components. Japanese Patent Laid-Open Publication No. 2-147803 proposes an STM apparatus provided with a mechanism capable of rotating a sample in order to solve the problem. However, according to these methods, when the recording area is sufficiently large or the recording medium is large, the amount of movement of the probe in the Z-axis direction forcibly caused by the inclination of the recording medium is limited by the amount of movement of the probe. The control range may be exceeded.
Even if the amount of movement of the probe in the Z-axis direction does not exceed the control range, the scanning surface of the probe (hereinafter referred to as X
−Y plane) and in-plane of the recording medium (hereinafter referred to as X′−).
As long as the direction is not parallel, there is a difference between the moving distance of the probe in the XY plane direction and the real space distance on the XY plane. Therefore, a mismatch (non-parallel) between the XY plane and the X′-Y ′ plane causes a problem that the accuracy of recording and reproduction may be reduced.

Second, in the recording / reproducing method using STM, it is essential to control the distance between the probe and the recording medium with submicron accuracy. In this case, a piezoelectric body is usually used for the distance control, but its operation speed is limited to about 1 MHz. Therefore, if the STM technology is used for recording and reproduction that requires a high transfer speed of image information and the like. , You have to use multiple probes. For example, Japanese Patent Laying-Open No. 62-281138 proposes improving the recording / reproducing speed by using a plurality of probes (multi-probe). In this case, it is desirable that the scanning surfaces of all the probes are adjusted so as to be parallel to the surface of the recording medium for the first reason, but no specific method has been proposed yet.

An object of the present invention is to improve the information processing accuracy of an information processing apparatus using SXM, particularly, an information processing apparatus having a plurality of probes, in order to improve the information processing accuracy.
Information processing apparatus, an information processing method, and a scanning surface of a probe and / or a tilt correction of a sample surface (-Y surface) and a sample surface (X′-Y ′ surface) which are controlled to be as parallel as possible. Surface matching) method.

[0007]

The above object is achieved by
The following is achieved by the present invention.

That is, an information processing apparatus and an information processing method according to the present invention are achieved by providing an information processing apparatus using SXM with an XY axis tilting mechanism for tilting a sample stage. Here, as a specific example of the XY axis tilt mechanism, it is preferable to use an XY axis tilt stage or an XY axis gonio stage. In this case, since the scanning involved in scanning the probe over the sample is relative, (1) whether the probe itself can scan, (2) whether the sample stage can scan, or (3) both However, any method capable of scanning independently of each other may be used. However, in the case of (3), the scanning direction of the probe itself and the scanning direction (X-Y direction) of the sample table are set in advance to be parallel. Further, the probe is temporarily scanned on the surface of the recording medium, and the scanning surface (X-axis direction) is moved by the movement of the probe in a direction (Z-axis direction) perpendicular to the scanning surface at this time.
A mechanism for detecting the amount of inclination between the recording medium surface (X′-Y ′ plane) and the surface of the recording medium (X′-Y ′ plane), and a means for driving and controlling the XY axis tilting mechanism so as to minimize the amount of inclination. An amplitude detection circuit for detecting an amplitude of a signal component having an arbitrary spatial frequency among signal components corresponding to a surface state or recording information obtained by scanning a needle, and setting the amplitude to 0.
Alternatively, it also has a feedback circuit for controlling a drive mechanism for inclining the XY axis plane so that the value becomes as small as possible. Further, it also has a plurality of probes and a distance adjusting mechanism capable of independently adjusting the distance between the plurality of probes and the surface of the recording medium for each of the probes.

According to the surface matching method of the present invention, SX
In an information processing device using or applying the principle of M,
The surface of the recording medium (X′-Y ′ plane) is aligned with a plurality of probe electrode surfaces (X ″ -Y ″ plane), and the scanning plane (XY).
The surface of the recording medium (X′-Y ′ plane) is aligned with the first and second plane alignment means with respect to the recording medium surface (X′-Y ′ plane). Access becomes possible. More specifically, a specific electrode of the plurality of probe electrodes is used as the first and second sensors for surface matching, and the surface of the recording medium (X′-Y ′ surface) and the plurality of probe electrode surfaces (X ″ -Y) are used. The surface of the recording medium (X′-Y ′ surface) is aligned with the scanning surface (XY surface), and a plurality of probe electrode surfaces (X ″ -Y ″ surface) are aligned.
And the scanning surface (XY plane) of the recording medium surface (X′-Y ′ plane)
(Parallel adjustment) to each other. By doing so, it is possible to access the plurality of probe electrodes and the surface of the recording medium at high speed by not moving the probe electrode in the direction perpendicular to the surface of the recording medium during information processing, or by merely performing a slight movement.

Hereinafter, the present invention will be described by taking STM as an example of SXM.

[0011]

Embodiments of the present invention will be described below.

Embodiment 1 First, a scanning plane (XY plane) in the information processing apparatus of the present invention.
A mechanism for detecting the amount of tilt between the sample and the sample surface (X′-Y ′ plane) will be described using an information processing apparatus using STM as an example.

FIG. 1 is a block diagram showing an example of an information processing apparatus using STM. In FIG. 1, the number of probes is set to a minimum of two for simplicity. That is, the probe units 101 and 102 are used, but the number of the probe units may be larger than this.
In each probe unit, reference numeral 1 denotes a probe electrode as a probe, which may be any material exhibiting conductivity, for example, Au, W, Pt, Pt-Ir alloy, Pt-Rh alloy, Pt-Rh alloy.
d coat Au, Pd coat W, Ag, WC, TiC, etc. are used. It is desirable that the tip of the probe electrode 1 be as sharp as possible.
Was sharpened using an electric field polishing method, and then Pd was adjusted to 100
Although a coating (evaporation) at 0 ° is used, the method of forming the probe electrode 1 is not limited to this.
The recording medium 2 includes an XY stage 3 and the XY stage 3
It is installed on a sample stage including an XY axis tilt mechanism 4 provided above. The XY stage 3 is connected to a microcomputer 8 via an XY coarse movement mechanism 5 and an XY coarse movement drive circuit 6.
Drive control can be performed. The XY-axis tilt mechanism 4 can be similarly controlled using the XY-axis tilt drive circuit 7.

In the probe units 101 and 102, 10
Is an XY for scanning the probe electrode 1 in the XY directions.
This is a directional fine movement mechanism. In the present invention, a stack piezo element is used.
It is not limited to a piezo element. The XY direction fine movement mechanism 10 is controlled by an XY direction scanning drive circuit 11. The XY direction, which is the scanning direction of the probe electrode 1, and the XY direction of the XY stage 3 are adjusted in advance so as to match (parallel). Therefore, the XY directions between the probe units 101 and 102 also match each other.
In FIG. 1, the probe electrodes 1 can be independently controlled with respect to scanning in the XY directions. However, as shown in FIG. 2, each probe electrode 1 moves in conjunction with the XY directions. May be. Of course, even in this case,
Scanning direction of probe electrode 1 and XY of XY stage 3
It is adjusted in advance so as to be parallel to the direction. In the probe units 101 and 102, reference numeral 12 denotes a Z-direction fine movement mechanism for finely moving the probe electrode 1 in the Z-axis direction. In the present invention, a stacked piezo element is used, but the present invention is not limited to this. The Z-direction fine movement mechanism 12 is required for each probe electrode 1, and its position is controlled independently by the servo circuit 13.

[0015] 14 is a bias voltage application unit which applies a bias voltage (hereinafter referred to as V _B) between the probe electrode 1 and the recording medium 2, a tunnel current flowing between the time the probe electrode 1 and the recording medium 2 amplifying and detecting (hereinafter referred to as J _T) is a tunnel current amplifier 15. The servo circuit 13 is used to adjust the height of the probe electrode 1 (the distance between the probe electrode 1 and the sample in the Z-axis direction) so that the detected _JT has an appropriate value. Reference numeral 18 denotes a pulse power supply used for recording or erasing information. When observing (reproducing) the surface state of the recording medium 2 by scanning the probe electrode 1 over the sample using the above mechanism, (1) the height of the probe electrode 1 is adjusted so that the detected _JT is constant. controlled, a method of measuring the height variation of the probe electrode 1 according (hereinafter referred to as current constant mode), the J _T when was scanned by a fixed height to a fixed value (2) the probe electrode 1 There are two methods of measuring the amount of change (hereinafter referred to as a constant height mode).
When the mode (1) is selected, the height (not necessarily the absolute value) of the probe electrode 1 is detected by the probe electrode height detection unit 16, and then the sample surface is detected by the duplexer 17. And the height component based on the change in the electronic state and the component caused by the tilt of the sample are separated, and the latter is fed back to the XY axis tilt control mechanism 7 so that the component becomes almost zero (that is, the amplitude becomes zero). The inclination of the recording medium 2 on the sample stage is corrected so as to become almost 0). Now, a case in which highly oriented graphite (hereinafter referred to as HOPG) is used as the recording medium 2 and only one axis (X-axis) direction is corrected for simplicity will be specifically described.

[0016] The V _B and 1V J _T indicates a change in the height of the probe electrode 1 (Z-axis direction) when is scanned along the probe electrode 1 in HOPG on the X-axis direction so as to 1 nA, FIG. 3 corresponding to the arrangement of carbon atoms constituting HOPG.
You should get something like The X axis direction is not necessarily H
The pitch of the periodic structure in FIG. 3 does not always coincide with the interstitial distance because it does not always follow the crystal orientation of the OPG, but is generally within 3 °. The amount of change in the height (Z-axis) direction is several Å. The above is the case where the surface of the recording medium 2 is parallel to the X axis. If the surface is inclined, the angle formed between the surface (X ′ axis) of the recording medium 2 and the X axis is θ, and The change in the Z-axis direction is as shown in FIG. That is, the height change caused by the inclination of the recording medium 2 is superimposed on the height change caused by the periodic structure of the atoms. Since it is difficult to handle a reproduced image as it is, a low-frequency component (a signal derived from the inclination of the recording medium) is cut using an electric filter to extract a signal based on the periodic structure of atoms. However, when the recording medium 2 is inclined, the probe electrode 1
Is scanned along the X-axis for a distance x, the surface of the recording medium 2 is scanned along the X'-axis over the length of x '= x / cos θ. If the low frequency component is cut from the signal, information between the distances x 'is compressed to the distance x. Therefore, the distance dimension accuracy is poor, and the larger the information processing area, the greater the difference between the real space and the scanning distance. Further, the total displacement of the probe electrode 1 in the Z-axis direction due to the tilt of the sample at the point x is z = xt
However, if the inclination of the recording medium 2 is large and z exceeds the fine movement range of the probe electrode 1 in the Z-axis direction, continuous information processing is impossible. In this invention, the probe electrode height signal (or an electrical signal to be fed back to the servo circuit 13 in order to keep the J _T constant) duplexer 17
To divide into a plurality of frequency bands including an arbitrary frequency region. A frequency (usually the lowest frequency) derived from the inclination of the recording medium 2 is selected from among them, and the inclination of the recording medium 2 is adjusted using the XY axis inclination control mechanism 7 so that the amplitude of the frequency becomes as small as possible. to correct. That is, considering a case where the probe electrode 1 is reciprocally scanned in a constant section using the constant current mode, a scanning signal of the probe electrode 1 is shown in FIG. FIG. 5 also shows the amount of displacement of the probe electrode 1 in the Z-axis direction at this time. The frequency of the signal component derived from the inclination of the recording medium 2 is synchronized with that of the probe electrode scanning signal. However, depending on the direction of the inclination of the recording medium 2, the phase may be shifted by 180 ° as shown by a broken line. The first scan may be performed at an appropriate distance in accordance with the size of the information processing area, and a scan for correcting the inclination of the recording medium 2 and feedback to the XY axis inclination control mechanism 7 may be performed as necessary. You may go many times. If the above operation is also performed for the Y axis, the recording medium surface (X′−Y ′)
Plane) and the probe electrode scanning plane (XY plane) are parallel to each other. Then, the probe electrode height change signal obtained is XY
It is extremely excellent in the positional dimensional accuracy in the direction.

[0017] Next, when (2) of the recording medium 2 when the height constant mode selected is inclined, the probe electrode 1 is too far from the recording medium 2, and impossible longer detecting the J _T Or the probe electrode 1 is a recording medium 2
Either contact. Usually in order to avoid such a situation, even if the height constant mode detected even a J _T of the servo value so is within a predetermined range circuit 13
In many cases, the height of the probe electrode 1 is slowly changed. However, also in this case, there is a strong possibility that the dimensional accuracy is also reduced by the signal processing described above. In addition, although arithmetic processing must be performed for feedback, this causes a reduction in the information reproduction speed. Further, the point that the dimensional error becomes larger when the information processing area is large and that the correction beyond the range of the fine movement of the probe electrode 1 in the Z-axis direction is impossible are the same as in the case of using the constant current mode of (1). Problem arises. Thus Similar changes signal J _T accompanying the scanning (signal normally such signal was amplified using tunneling current amplifier 15) and (1), a plurality of frequencies including any frequency range by using a demultiplexer 17 Divide into bands. A frequency (usually the lowest frequency) derived from the inclination of the recording medium 2 is selected from among them, and the inclination of the recording medium 2 is adjusted using the XY axis inclination control mechanism 7 so that the amplitude of the frequency becomes as small as possible. to correct. The first scan may be performed at an appropriate distance according to the size of the desired information processing area, and the scan for correcting the tilt of the recording medium 2 and the feedback to the XY axis tilt control mechanism 7 may be performed as necessary. May be performed multiple times. If the above operation is also performed on the Y axis, the surface of the recording medium (X′-Y ′ plane) and the scanning plane of the probe electrode (XY plane) are parallel. Thereafter J _T change signal obtained becomes that very high dimensional accuracy of the recording medium plane (X-Y directions).

As described above, it is necessary to divide a signal (information reproduction signal) corresponding to the state of the surface of the recording medium 2 into an arbitrary frequency and further examine the amplitude of the multiplexed signal component. However, a lock-in amplifier may be used for such an operation. That is, the duplexer 17 may be a lock-in amplifier. In the lock-in amplifier, the amplitude of a signal component of an arbitrary frequency in an input signal (in this case, a signal corresponding to the surface state of a sample) can be checked, and a signal to be referred to is input, and the frequency of the reference signal is input. It is possible to check the amplitude of the input signal component having. Therefore, if the sweep signal of the probe is used as the reference signal, the degree of inclination of the recording medium 2 can be more easily known.

Next, the XY axis tilting mechanism 4 will be described. As the XY axis tilt mechanism 4, any mechanism can be used as long as it can finely and precisely control the tilt of the sample in two axes.
It is convenient to use a Y-axis goniometer. The former is a three-point support stage, and at least two of the support points (the distance between the support surface and the stage) are variable.
By appropriately adjusting the length, the inclination of the stage surface can be changed. To change the length of the support point,
In addition to mechanical methods using a micrometer head, etc.,
A piezoelectric element may be used. The latter is preferable because the variable amount is small but finer control is possible. However, when the information processing area is very wide, the former use may be preferable. Furthermore, it is one of the very preferable methods that the displacement amount in the XY axis tilt stage is enlarged by using a lever and then controlled by using an appropriate actuator. The XY axis goniometer combines two goniometers capable of tilting and rotating the stage, and enables biaxial tilting and rotation.

By the operation described above, the surface of the recording medium 2 and the scanning direction (XY direction) of the probe electrode 1 are in a parallel positional relationship. Then under certain V _B, as J _T is optionally set value (e.g. 0.1 nA), adjusted for the probe electrode 1 in all of the probe unit. The position of the probe electrode 1 in the Z-axis direction at this time is set as the origin. The reproduction signal of information obtained through each probe electrode 1 by such an operation and the pulse voltage signal applied to the recording medium 2 through each probe electrode 1 for recording or erasing information are all equivalent. The above-described series of operations will be briefly described again once again with reference to FIG. It is assumed that there are n (n is a natural number of 2 or more) probe units 101, 102, 103, 104,..., 10n. As shown in FIG. 6A, each probe unit 10n
Distances d ₁ , d ₂ , between the probe electrode 1 and the recording medium 2
_{d 3, d 4, ... d} n is not constant due to variations in inclination and length of the probe electrode 1 of the recording medium 2. First, any one of the probe units 10n (referred to as 101) is scanned over an arbitrary section on the recording medium 2, and the reproduced signal of the surface state obtained at this time is used to scan the recording medium 2 as shown in FIG. Correct the tilt and scan direction of probe electrode 1 (X-Y direction)
And the surface of the recording medium 2 are made parallel. It is desirable that the scanning distance of the probe electrode 1 at this time coincides with the size of the information processing area as much as possible. However, the scanning section may be gradually lengthened while performing the above-described tilt correction operation. Actually, when the inclination of the recording medium 2 is steep,
Sometimes you have to do that. Finally, as shown in FIG. 6C, the distance between the probe electrode 1 and the recording medium 2 is once adjusted equally for all the probe units 10n, and the position of the probe electrode 1 in the Z-axis direction at this time is set as the origin. . Here, when the tilt correction of the recording medium 2 is omitted and the Z-axis position of the probe electrode 1 is corrected immediately, the scanning of the probe electrode 1 is performed except when the recording medium 2 is not tilted by accident, that is, Recording / playback of information
One of the probe electrodes 1 is changed to the recording medium 2 by the erase operation.
Problems, such as colliding with and too far away. In addition, when feedback control is performed to avoid the above-described problem, not only a reduction in the information processing speed but also XY
Since the error relating to the position in the direction increases, the error rate related to information processing increases.

Although the operation of the present invention has been described with reference to the STM as an example, the present invention is not limited to the case of simply measuring J _T at each point, but the present invention is not limited to the scanning type for measuring dJ _T / dV _B at each point. It goes without saying that the present invention is also effective for an information processing apparatus or an information processing method using tunneling spectroscopy (STS). Another SXM in which the drive mechanism of the probe and the sample is the same as that of the STM, for example, the atomic force acting between the probe and the sample is measured, and feedback is performed so that the magnitude is constant, and the surface of the sample is applied. Scanning atomic force microscope (AFM) that obtains the structure of AFM, the probe in the AFM is replaced with a ferromagnetic material such as Fe or Ni, or those coated with a probe made of another material on the sample. Scanning magnetic force microscope (MFM) for measuring local magnetic force, scanning ion conductance microscope (SICM) for measuring the surface structure of a sample in an electrolyte solution from changes in ionic conductivity using a micropipette electrode as a probe, probe Utilize the change in amplitude and phase of the ultrasonic wave that is reflected by the sample surface and returned to the probe by ultrasonic vibration, or by using the ultrasonic vibrating probe and the atomic force acting on the sample surface. An external light source using a scanning acoustic microscope (STUM or STAM) for measuring the surface structure of the sample by measuring an acoustic wave generated in the sample, or an optical probe having a pinhole having a diameter smaller than the wavelength of light. Information processing apparatus or information processing method using a scanning near-field optical microscope (NSOM) or the like for detecting evanescent light generated on the surface of a sample when irradiating the sample with the above-mentioned optical probe to know the surface structure of the sample Is also applicable.

After the surface of the recording medium 2 is once made parallel to the scanning surface of the probe, the operation of the probe colliding with the recording medium 2 during scanning or correcting the position of the probe in the Z direction is required. As a result, the speed of information processing can be increased, and in addition, the accuracy of the position of the recording bit can be greatly improved, so that recording, reproduction, and erasing can be performed with high accuracy.

In the present invention, there is no restriction on the recording medium 2 used for this. For example, in an information processing apparatus and an information processing method using STM, the recording medium 2 is described in Japanese Patent Application Laid-Open No. 63-161552 and -1615
For example, a thin film having an electric memory effect described in JP-A-53-53, for example, a thin film in which a recording layer made of a π-electron organic compound or a chalcogen compound is deposited on a conductive substrate can be used. When these recording media are used, a local change in the conductivity of the recording layer immediately below the probe is applied by applying a voltage of a certain threshold or more between the probe and the conductive substrate. Make and record. Further, the recording portion can be erased by applying a voltage higher than a certain threshold, that is, the conductivity can be returned to the original state. At the time of recording reproduction, the probe voltage between the recording portion and the non-recording portion is determined by using a probe voltage equal to or lower than the threshold value at which the above-described recording or erasing occurs.
_This is done by detecting the difference in _T.

When a voltage higher than a certain threshold is applied to the recording medium 2, a material whose surface is locally melted or evaporated to change the surface state into a concave or convex state, for example,
A metal thin film of Au, Pt, or the like may be used. In any case, it is desirable that the surface of the recording medium 2 is as smooth as possible, except for irregularities provided artificially for tracking.

When information processing is performed using another SXM technology, it is generally somewhat difficult to record aside from reproducing. Therefore, at the time of recording, it is easy to electrically perform the recording, that is, to use the STM, or to directly collide the probe with the recording medium 2 and perform the recording using the mechanical shape change.

Example 2 A recording / reproducing experiment was performed using the information processing apparatus using the STM shown in FIG. 0.3 m for probe electrode 1
Au of mφ is subjected to electric field polishing in HCl. The XY axis tilting stage shown in FIG. 7 was used as the XY axis tilting mechanism 4. In FIG. 7, the stage 21 is supported at three points on the reference plane 22, and two of these supporting points 23
And 24 are made of piezoelectric elements, and can change the distance between the reference surface 22 and the stage 21 in the order of Å. The remaining one support point 25 is formed so as to make point contact, and does not prevent the stage from freely moving (tilting) with respect to the movement of the piezoelectric element. The three support points are arranged at the vertices of an equilateral triangle on the reference plane 22, and the support point 25 and one of the support points 23 using the piezoelectric element are in the X-axis direction of the XY stage 3. It is arranged so that it may become parallel.

As the recording medium 2, a material was used in which Au was vapor-deposited (substrate temperature: 450 ° C.) on cleaved mica to a thickness of 5000 °.

[0028] After placing the recording medium 2 made of the Au on X-Y axis tilting stage, the probe electrodes of the probe unit 101 so that J _T is 0.1nA the V _B as 100 mV (probe electrode bias) 1 was brought closer to the recording medium 2 using the Z-direction fine movement mechanism 12. Then take while J _T is the height of the probe electrode 1 so as to be constant controlled using servo circuit 13 (i.e. current constant mode), 10 Hz of the X-axis direction across the probe electrodes 1 to the length 500μm A reciprocating scan was performed at the sweep frequency. FIG. 8 shows a voltage signal waveform applied to the Z-direction fine movement mechanism 12 via the servo circuit 13 at that time. This signal was separated into a signal having a frequency of 10 Hz or less and a signal having a frequency of 10 Hz or more via a lock-in amplifier 17. Next, while continuously sweeping the probe electrode 1 of the probe unit 101, the frequency 1
The support point 23 is set so that the signal component of 0 Hz or less becomes almost zero.
The height of was adjusted.

Similarly, the probe electrode 1 of the probe unit 101 is swept in the Y-axis direction at a sweep frequency of 10 Hz, and the frequency component of 10 Hz or less in the voltage signal applied to the Z-direction fine movement mechanism 12 at that time is almost zero. The height of the support point 24 was adjusted so that

Next, with respect to both the probe units 101 and 102, the Z-direction fine movement mechanism 12 is used to set the distance between the probe electrode 1 and the recording medium 2 so that V _B = 100 mV and J _T = 0.1 nA. The distance was controlled, and the position of the probe electrode 1 in the Z-axis direction at this time was set as the origin. After performing the above operation, the pulse power supply 18 is used at an arbitrary position on the recording medium 2 (this position is hereinafter referred to as point A) while the height of the probe electrode 1 of the probe unit 101 is kept constant. +4.0 V, pulse width 30
A voltage of 0 nsec was applied. After that, when observing a region of 300 ° angle centered on the voltage application point in the constant current mode, it was confirmed that a protrusion having a height of 100 ° and a height of 20 ° was formed, and that recording was performed. Then, information was recorded at a position 50 μm away from the point A in the X direction (hereinafter, referred to as a point B) using the same method. Thereafter, using the same method, 50 μm from point B in the Y direction.
C point away by m, and -50 μm in X direction from such C point
It has been confirmed that recording can be performed sequentially at a distant point D without any problem. Next, when the probe electrode 1 was moved to a position -50 μm away from the point D in the Y direction, it was confirmed that recording was already performed at that position. That is, the probe electrode 1 correctly returned to the original point A, and it was found that the dimensional accuracy of the position control was very high. Further, when a similar experiment was performed using the probe unit 102, it was confirmed that, similarly to the case where the probe unit 101 was used, recording and reproduction of information excellent in position control was possible. When recording and reproducing information was performed using the probe units 101 and 102 at the same time, as in the case of using independently,
It was confirmed that the dimensional accuracy of position control was excellent.

Example 3 As in Example 2, a recording / reproducing experiment was performed using the information processing apparatus using the STM shown in FIG. Hereinafter, differences from the second embodiment will be described. 0.3 for the probe electrode 1
An electrode obtained by electroplating W of mmφ and then depositing Pd to a thickness of 1000 ° was used.

Six layers of polyimide (hereinafter referred to as PI) Langmuir-Blodgett (hereinafter referred to as LB) films are formed on an electrode substrate obtained by evaporating Au to a thickness of 2500 ° (substrate temperature 450 ° C.) on cleaved mica as the recording medium 2. Was used. Hereinafter, a method for forming the PI-LB film will be described.

After dissolving the polyamic acid shown in (1) in N, N-dimethylacetamide solvent (concentration in terms of monomer: 1 × 10 ⁻³ M), the same solvent of N, N-dimethyloctadecylamine separately prepared And a 1 × 10 ⁻³ M solution according to the above was mixed 1: 2 (v: v) to prepare a solution of polyamic acid octadecylamine salt (hereinafter referred to as PAAD) shown in (2). The PAAD solution is developed on an aqueous phase composed of pure water at a water temperature of 20 ° C., and after removing the solvent by evaporation, the surface pressure is reduced to 25 mN.
/ M to form a monolayer on the water surface of PAAD. While keeping the surface pressure constant, the above-described Au electrode substrate was immersed gently at a speed of 5 mm / min across the water surface, and then gently pulled up at the same speed to form a two-layer PAAD-LB film. . This operation was repeated to form a six-layer PAAD-LB film.

Next, the epitaxial Au substrate on which the six-layer LB film of PAAD is laminated is subjected to a heat treatment at 300 ° C. for 10 minutes to imidize the PAAD. (3) Six-layer PI-LB
A membrane was obtained. An experiment of recording and reproduction was performed using the recording medium 2 created as described above.

[0035]

Embedded image

[0036]

Embedded image

[0037]

Embedded image After the recording medium 2 made of epitaxial Au in which six PI-LB films are stacked is placed on the XY stage 3,
J _T and V _B as 300 mV (probe electrode bias) is closer to the probe electrodes 1 of the probe unit 101 so as to 0.1nA the recording medium 2 by using the Z-direction fine movement mechanism 12. Then take while J _T is the height of the probe electrode 1 so as to be constant controlled using servo circuit 13 (i.e. current constant mode), 10 Hz of the X-axis direction across the probe electrodes 1 to the length 500μm A reciprocating scan was performed at the sweep frequency. The voltage signal waveform applied to the Z-direction fine movement mechanism 12 via the servo circuit 13 at that time was the same as that shown in FIG. This signal was separated into a signal having a frequency of 10 Hz or less and a signal having a frequency of 10 Hz or more via a lock-in amplifier 17.
Next, while continuously sweeping the probe electrode 1 of the probe unit 101, the height of the support point 23 was adjusted so that the signal component at the frequency of 10 Hz or less became almost zero.

Similarly, the probe electrode 1 of the probe unit 101 is swept in the Y-axis direction at a sweep frequency of 10 Hz, and the frequency component of 10 Hz or less in the voltage signal applied to the Z-direction fine movement mechanism 12 at that time is almost zero. The height of the support point 24 was adjusted so that

Next, with respect to both the probe units 101 and 102, the Z-direction fine movement mechanism 12 is used to set the distance between the probe electrode 1 and the recording medium 2 so that V _B = 300 mV and J _T = 0.1 nA. The distance was controlled, and the position of the probe electrode 1 in the Z-axis direction at this time was set as the origin. After performing the above operation, the pulse power supply 18 is used at an arbitrary position on the recording medium 2 (this position is hereinafter referred to as point A) while the height of the probe electrode 1 of the probe unit 101 is kept constant. The pulse voltage shown in FIG. 11 was applied. Observation of the area of 300Å angle height constant mode mainly thereafter such voltage applying point, J _T = 3 over 50Åφ around the pulse application point by such an operation
It became nA, and it was confirmed that the PI-LB film transitioned from the high resistance state (denoted as OFF state) where J _T = 0.1 nA to the low resistance state (denoted as ON state), and the recording was performed. Then, information was recorded at a position 50 μm away from the point A in the X direction (hereinafter, referred to as a point B) using the same method. Thereafter, using the same method, it was confirmed that recording could be performed sequentially at point C, which is 50 μm away from point B in the Y direction, and at point D, which is -50 μm away from point C in the X direction. Next, when the probe electrode 1 was moved to a position -50 μm away from the point D in the Y direction, it was confirmed that recording was already performed at that position (ON state). That is, the probe electrode 1 correctly returned to the original point A, and it was found that the dimensional accuracy of the position control was very high.

Further, a similar experiment was performed using the probe unit 102.
It was confirmed that, as in the case of using the probe unit 101, recording and reproduction of information excellent in position control were possible. Probe unit 1
When information was recorded and reproduced using both 01 and 102 at the same time, it was confirmed that the dimensional accuracy of position control was excellent as in the case of using independently.

After the probe electrode was moved to the recording point (ON state area), the pulse voltage shown in FIG. 10 was applied.
It was confirmed that _T returned to 0.1 nA.

Example 4 A recording / reproducing experiment was performed in exactly the same manner as in Example 2 except that the probe units 101 and 102 were replaced with the probes using a multicantilever shown in FIG.

The multi-cantilever probe will be described below. Reference numeral 40 denotes a silicon substrate on which cantilever units 31, 32 and 33 are formed.
The silicon substrate 40 is subjected to X-
Scan in the -Y direction is possible. Each cantilever unit has a cantilever 41 and an electrode tip 42 provided at the tip thereof as a probe electrode. Each electrode tip 4
The cantilever 41 can independently control the Z-axis direction, that is, the distance from the recording medium 2 by the cantilever 41. The cantilever 41 is a piezoelectric bimorph having a width of 50 μm and a length of 300 μm having a laminated structure of a metal electrode and a ZnO dielectric. A method of forming the cantilever 41 will be described below with reference to FIG.

First, as shown in FIG.
A silicon nitride film 5 with a thickness of 500 nm as an insulating film on the surface
No. 1 was formed by high frequency sputtering. Next, FIG.
After providing an opening 52 (1 μm in width) in the silicon nitride film 51 through a photolithography process as shown in FIG.
Electrode 53 made of Au having a subbing layer, and a ZnO layer (1.2 μm thick) formed by high frequency sputtering.
m) 54, an intermediate electrode 55 made of Au—Zn, a ZnO layer (thickness 1.2 μm) formed in the same manner as described above.
An upper electrode 57 made of 56 and Au was sequentially laminated. Further, the entire bimorph element manufactured as described above is shown in FIG.
After covering with a protective layer 58 made of a silicon nitride film deposited by a sputtering method as shown in (f), an electrode tip 42 having a conical projection made of vapor-deposited Au was formed. Subsequently, anisotropic etching of the silicon substrate 40 is performed using a KOH aqueous solution as an etchant, and holes 4 are formed in the openings 52.
3 was opened.

Using the multi-cantilever probe fabricated as described above, recording and reproduction were performed in exactly the same manner as in Example 2, and it was confirmed that the dimensional accuracy of position control was excellent.

Embodiment 5 Instead of the XY axis tilt stage in Embodiment 3, XY
Recording and reproduction experiments were performed in exactly the same manner as in Example 2 except that the axial goniometer was used as the XY axis tilting mechanism 4, and it was confirmed that the dimensional accuracy of the position control was excellent.

Embodiment 6 FIG. 13 is a view best showing the features of an information processing apparatus which can use the face matching method of the present invention.
Is a plurality of probe electrodes made by micromechanics technology, 62 is a probe electrode attachment for setting the plurality of probe electrodes to a tilt mechanism, 63 is a tilt mechanism for changing the inclination of the plurality of probe electrodes, and 64 is a plurality of probe electrodes. Fine movement / coarse movement in Z direction
This is a coarse movement mechanism. 2 is a recording medium, 91 is a substrate obtained by polishing glass, 92 is a base electrode formed by forming Cr (undercoat layer) and Au on the substrate 51 by a vacuum evaporation method, 93
Is a graphite (HOPG) recording layer. Recording layer 9
Numeral 3 is adhered on the base electrode 92 with a conductive adhesive, and the information processing region on the surface of the recording layer 93 is smoothed in the atomic order by cleavage. 66 is a tilt mechanism for changing the inclination of the recording medium 2, and 67 is an XY fine / coarse movement mechanism for finely / coarsely moving the recording medium 2 in the XY directions. Reference numeral 68 denotes an interface for connecting to an information processing device, and performs input / output of write / read information, output of status, input of control signals, and output of address signals. Reference numeral 80 denotes a control circuit for centrally controlling the interaction between blocks in the information processing apparatus, and reference numeral 81 denotes a control circuit for writing / reading information (data).
A write / read circuit 82 for writing / reading in accordance with an instruction from the device; a command signal from the write / read circuit 82 applies a write pulse voltage between the plurality of probe electrodes 1 and the recording medium 2 to write data; A bias circuit for applying a read-in or read-out voltage; 83, a tunnel current detection circuit for detecting a current flowing between the plurality of probe electrodes 1 and the recording medium 2 during recording / reproduction; 84, an instruction from the control circuit 80 or the like; A positioning circuit for determining the positions of the plurality of probe electrodes 1 and the recording medium 2 based on signals from the tunnel current detection circuit 83 and the position detection circuit 88.
A servo circuit 86 for servoing the positions of the plurality of probe electrodes 1 and the recording medium 2 based on the servo signal from the controller 86.
A Z-direction drive circuit for driving the coarse movement mechanism 64, 87 is an XY-direction drive circuit for driving the XY-direction fine movement / coarse movement mechanism 67 of the recording medium 2 in accordance with a signal of the servo circuit 85, and 89 is a tilt mechanism in accordance with the signal of the servo circuit 85. A tilt mechanism driving circuit for driving 63 and 66, and a tunnel current detecting circuit 90 for detecting a tunnel current flowing through the probe electrode 1 used when approaching the plurality of probe electrodes 1 to the recording medium 2.
Although only one control circuit 80, write / read circuit 81, bias circuit 82, and tunnel current detector 83 are shown in this drawing, actually, a plurality of probe electrodes are used. In this embodiment, a cantilever probe shown in FIG. 11 is used.

FIG. 14 is a drawing showing a plurality of probe electrodes 1 used in the present embodiment as viewed from above.
Are arranged in a total of 200 in the X direction and 20 in the Y direction. Each of the probe electrodes 1 is provided with wiring for detecting a tunnel current from the electrode tip 42 or applying a voltage to the recording layer 93 with a recording signal, and each includes a tunnel current detector 83 and a bias circuit 82.
Is connected to Reference numeral 70 denotes a plurality of probe electrode substrates. In this embodiment, three probe electrodes ((10,
A), (1, J), (20, J)) were used for Z-direction position adjustment.

The plurality of probe electrodes shown in FIG.
Was attached to the apparatus shown in (1). Attachment is performed by attaching a plurality of probe electrode substrates 70 to the probe electrode attachments 62 using an adhesive.
The probe electrode 1, the tunnel current detector 83, and the bias circuit 82 were connected by a connector. The tilt mechanism 63 includes a leaf spring 71 for fixing the probe electrode attachment 62, laminated piezoelectric elements 72 to 74 for correcting the inclination of the plurality of probe electrodes 1, and a steel ball 75 for concentrating the load of the laminated piezoelectric element at one point. You. The stacked piezoelectric elements 72 to 74 are arranged so as to expand and contract in the Z-axis direction. One of the expansion and contraction directions is fixed to the leaf spring 71 with an adhesive, and the other is in contact with the steel ball 75. Also,
Three stacked piezoelectric elements 72 to 74 are used, and three Z-direction position adjustment probe electrodes (10,
A), (1, J), and (20, J).

The apparatus used in this embodiment has a configuration in which a plurality of probe electrodes 1 are fixed in the XY directions, and the recording medium 2 is slightly moved in the XY directions.

Next, the details of the surface matching method will be described.

First, the plurality of probe electrodes 1 are aligned with the surface (X′-Y ′ plane) of the recording medium 2.

A plurality of probe electrodes 1 are tilted and fixed to the probe electrode attachment 62 such that the Z direction position adjusting probe electrodes (10, A) approach the recording medium 2 first. Z direction position adjustment probe electrode (10,
A), (1, J) and (20, J) are applied with a voltage of 1 mV, the cantilever is displaced by 1 nm toward the recording medium 2, and a bias voltage of 0.5 V is applied between the probe electrode 1 and the recording medium 2.

First, plane correction in the X direction is performed.

As shown in FIG. 16B, the Z-direction position adjusting probe electrode (10, A) is ^moved to 10 ^-8 by the Z-direction coarse movement mechanism.
Move to a position where a tunnel current of about A is detected.
Next, as shown in FIG. 16B, the multilayer piezoelectric element 72 is extended, and the Z-direction position adjustment probe electrode (1, J) is equal to the tunnel current detected by the Z-direction position adjustment probe electrode (10, A). Move until. Laminated piezoelectric element 7
The tunnel in which the Z-direction position adjustment probe electrode (1, J) is detected by increasing the voltage applied to 2 to 100 mV (approximately 10 nm in terms of displacement) by the Z-direction position adjustment probe electrode (1, J). Could be the same as the current.

Next, plane correction in the Y direction is performed as shown in FIG.

As shown in FIG. 16 (d), the stacked piezoelectric element 74 is extended, and the Z-direction position adjustment probe electrode (20, J) is the same as the tunnel current detected by the Z-direction position adjustment probe electrode (10, A). Move until. By increasing the voltage applied to the multilayer piezoelectric element 74 by 50 mV (about 5 nm in terms of displacement), the Z-direction position adjustment probe electrode (20, J) is changed to the Z-direction position adjustment probe electrode (10, A). Could be the same as the detected tunnel current.

Next, a probe electrode (1,
J), the voltage applied to (20, J) is set to 0 V,
Undo the cantilever displacement.

Next, the surface of the recording medium 2 (X′-Y ′ plane) and the scanning plane (XY plane) are aligned (FIG. 17).

First, at any point A on the recording medium 2, the probe electrodes (1
0, A) to the tunnel area. Then, the probe is moved to a point B at one corner of the recording area S while controlling the vertical distance of the Z-direction position adjustment probe electrode (10, A). next,
Similarly, the probe electrode 1 is moved from the point B in the order of C, D, and E while keeping the tunnel area constant along the outer periphery of the recording area S.

FIG. 18 shows the control amount of the probe electrode 1 in the vertical direction when the probe electrode 1 is moved along the outer periphery of the recording area S. The vertical direction of the probe electrode 1 with reference to the point A in FIG. The control amount is shown on the vertical axis. Control is performed to move the probe electrode 1 toward the recording medium 2 from point A to point D, and control is performed to move away from point D to point B. That is, in the above case, the recording medium 2 with respect to the scanning surface (XY plane) of the probe electrode 1
It can be seen that the inclination of the (X′-Y ′ plane) is closest to the scanning plane at point A, followed by points B, C and E, and point D at the farthest.

From these results, the tilt mechanisms 63 and 66 are used to maintain the parallelism between the plurality of probe electrodes 1 and the surface of the recording medium 2 while maintaining the inclination of the surface of the recording medium 2 (X′-Y ′ plane) and the plurality of probe electrodes 1. Is changed, and the surface is aligned with the scanning plane (XY plane). By the above operation, a plurality of probe electrode surfaces (X "-Y" surface) and a recording medium surface (X'-Y 'surface)
And the scanning plane (XY plane) are in parallel with each other.

In this state, a recording experiment was performed by driving the XY fine movement mechanism and applying a triangular wave of ± 10 V to an arbitrary tunnel chip / substrate electrode with respect to the recording medium. Recording and reproduction of information could be performed without sufficient contact of the chip.

In this embodiment, three probe electrodes are used as the Z-direction position adjustment probe electrodes when the plurality of probe electrodes 1 and the recording medium 2 are aligned with each other. Also, the order of the surface matching may be such that the Y direction is matched before the X direction is matched.

When the surface (X′-Y ′ plane) of the recording medium 2 is aligned with the scanning plane (XY plane), the probe electrodes (10, A) for adjusting the position of the plurality of probe electrodes 1 in the Z direction are used.
Was used as a sensor, but any probe electrode may be used. Similar results were obtained when the Z-direction position adjustment probe electrode (1, J) was used as a sensor.

Embodiment 7 In Embodiment 6, a plurality of probe electrodes 1 and a recording medium 2 (X'-
Although the scanning plane (XY plane) and the recording medium 2 (X′-Y ′ plane) were aligned after the plane alignment of the scanning plane (XY plane), the scanning plane (XY plane) was first used in this embodiment. Surface) and recording medium 2 (X ′
-Y 'plane), and then a plurality of probe electrodes 1 and the recording medium 2 (X'-Y' plane). Others are the same as the sixth embodiment.

Hereinafter, the details of the face matching will be described.

First, the scanning surface (XY plane) and the recording medium 2
(X′-Y ′ plane) is aligned.

The plurality of probe electrodes 1 are tilted and fixed to the probe electrode attachment 62 such that the Z direction position adjusting probe electrodes (10, A) approach the recording medium 2 first. Probe electrode for position adjustment in Z direction (10, A)
, A cantilever is displaced by 1 nm toward the recording medium 2, and a bias voltage of 0.5 V is applied between the probe electrode 1 and the recording medium 2.

The Z-direction position adjustment probe electrode (10, A) and the recording medium 2 are moved closer to an arbitrary point A on the recording medium 2 to the tunnel region. Then, the probe electrode 1 is moved to a point B at one corner of the recording area S while controlling the vertical distance. Next, while keeping the tunnel area constant along the outer periphery of the recording area S, the probe electrode is moved from the point B to the point C,
Move in order of D and E. The mechanism for detecting and correcting the inclination between the scanning surface and the recording medium 2 is the same as that in the sixth embodiment.

Next, the plurality of probe electrodes 1 and the recording medium 2 are aligned.

The Z direction position adjustment probe electrode (1,
A voltage of 1 mV is also applied to J) and (20, J), the cantilever is displaced by 1 nm toward the recording medium, and a bias voltage of 0.5 V is applied between the probe electrode 1 and the recording medium 2.

The method of face matching is the same as in the sixth embodiment.
By the above operation, a plurality of probe electrode surfaces (X "-Y")
Surface), recording medium surface (X-Y 'surface), and scanning surface (X-
(Y plane) are parallel to each other.

In this state, the XY fine movement mechanism was driven, and a recording experiment was performed by applying a triangular wave of ± 10 V to an arbitrary tunnel chip / substrate electrode with respect to the recording medium. Recording and reproduction of information could be performed without sufficient contact of the chip.

Embodiment 8 FIG. 19 shows a plurality of probe electrodes 1 used in this embodiment, and ten probe electrodes 1 are arranged in a line in the X direction. The plurality of probe electrodes 1 were mounted on the device shown in FIG. The configuration of the device is the same as that used in Examples 6 and 7, except that the number of laminated piezoelectric elements for correcting the inclination of the plurality of probe electrodes 1 is two. Each of them is disposed right above two Z-direction position adjustment probe electrodes (A) and (J).

The apparatus used in this embodiment has a configuration in which a plurality of probe electrodes 1 are fixed in the XY directions and the recording medium 2 is slightly moved in the XY directions.

Next, the details of the surface matching method will be described.

First, a plurality of probe electrodes 1 are aligned with the surface (X′-Y ′ plane) of the recording medium 2.

A plurality of probe electrodes 1 are tilted and fixed to the probe electrode attachment 62 such that the Z direction position adjustment probe electrode (A) approaches the recording medium 2 first. A voltage of 1 mV is applied to the Z direction position adjustment probe electrodes (A) and (J), and the cantilever is moved toward the recording medium 2 by 1n.
m, and a bias voltage of 0.5 V is applied between the probe electrode 1 and the recording medium 2.

As shown in FIG. 20A, the Z-direction position adjusting probe electrode (A) is moved to a position where a tunnel current of about 10 ^-8 A is detected by the Z-direction coarse movement mechanism.

Next, as shown in FIG.
2 and extend the Z direction position adjustment probe electrode (J) to Z
The probe is moved until the direction-adjustment probe electrode (A) becomes equal to the detected tunnel current. Laminated piezoelectric element 72
To 100 mV (approximately 1
0 nm) to increase the Z-direction position adjustment probe electrode (J).
Could be the same as the detected tunnel current.

Next, a Z direction position adjustment probe electrode (J)
Is set to 0 V, and the displacement of the cantilever is restored.

Next, the surface (X′-Y ′ plane) of the recording medium 2 and the scanning plane (XY plane) are aligned in the same manner as in the sixth embodiment (FIG. 9). The surface matching method is the same as in the sixth embodiment.

A recording experiment was performed by driving the XY fine movement mechanism in the state where the surface matching was completed and applying a triangular wave of ± 10 V to the recording medium 2 between any electrode tip / substrate electrode. Recording and reproduction of information could be performed without sufficient contact of the chip.

In this example, the Z-direction position adjusting probe electrode (A) was used as a sensor for aligning the surface of the recording medium 2 with the scanning surface, but any probe electrode may be used. Similar results were obtained when used as a sensor.

The plurality of probe electrode substrates 70 shown in FIG. 19 may be arranged such that the lengthwise direction of the cantilever is arranged in the Y direction as shown in FIG. 21, and only the electrode tips are straightened as shown in FIG. They may be arranged side by side.

[0087]

As described above, according to the information processing apparatus and the information processing method of the present invention, (1) Information processing using a scanning probe microscope technique and having a plurality of probes as information processing heads. In the apparatus and the information processing method, it is possible to perform information processing such as recording / reproducing and erasing with high positional accuracy and high reproducibility of the information processing; After that, the information processing is performed, so that the feedback control regarding the position control of the probe in the Z-axis direction (the direction normal to the surface of the recording medium) can be simplified, and the calculation time required for the feedback control can be simplified. And the speed of information processing can be increased;

Further, in the surface alignment method using the tilt mechanism of the present invention, a plurality of probe electrodes and a recording medium (X′-
Since the Y ′ plane) is aligned with the scanning plane (XY plane), contact between the plurality of probe electrodes and the recording medium can be avoided, writing and reading errors can be improved, and high-speed scanning can be performed. It is now possible.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of an information processing apparatus according to the present invention.

FIG. 2 shows another embodiment of the probe unit.

FIG. 3 is an ideal signal waveform showing a change in height of a probe electrode expected when HOPG is observed using STM.

FIG. 4 is a signal waveform of a probe electrode height change actually obtained.

FIG. 5 is a diagram showing a time change of the probe electrode scanning control voltage signal and the probe electrode Z-axis direction displacement signal when the probe electrode is reciprocally scanned on the HOPG.

FIG. 6 is a schematic diagram for sequentially explaining an adjustment process relating to the positions of a multi-probe electrode and a recording medium.

FIG. 7 is a diagram showing an example of an XY axis tilt stage.

FIG. 8 is a diagram showing a voltage signal waveform applied to the Z-direction fine movement mechanism obtained when observing the surface of Au using an information processing apparatus using STM.

FIG. 9 is a diagram showing a waveform of a pulse voltage applied to turn on the PI-LB film.

FIG. 10 is a diagram showing a waveform of a pulse voltage applied to turn off a PI-LB film in an ON state.

FIG. 11 is a diagram showing a configuration of a multi-cantilever probe used in the present invention.

FIG. 12 is a view for sequentially explaining a manufacturing process of a cantilever unit used in a multi-cantilever probe.

FIG. 13 is a schematic block diagram of an information processing apparatus that can use a method of aligning a plurality of probes.

FIG. 14 is a top view of a plurality of probe electrodes used in the surface matching method of the present invention.

FIG. 15 is a sectional view of a tilt mechanism.

FIG. 16 is a view for explaining a surface matching method.

FIG. 17 is a diagram showing a scanning path of a probe electrode in a recording area.

FIG. 18 is a graph showing a vertical control amount of a probe electrode.

FIG. 19 is a top view of a plurality of probe electrodes used in the surface matching method of the present invention.

FIG. 20 is a diagram illustrating a surface matching method.

FIG. 21 is a top view of a plurality of probe electrodes used in the surface matching method of the present invention.

FIG. 22 is a top view of a plurality of probe electrodes used in the surface matching method of the present invention.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 probe electrode 2 recording medium 3 XY stage 4 XY axis tilt mechanism 5 XY coarse motion mechanism 6 XY coarse motion drive circuit 7 XY axis tilt drive circuit 8 Microcomputer 9 Display 10 XY Direction fine movement mechanism 11 XY direction scanning drive circuit 12 Z direction fine movement mechanism 13 Servo circuit 14 Bias voltage application unit 15 Tunnel current amplification unit 16 Probe electrode height detection unit 17 Duplexer 18 Pulse power supply 101 to 10n Probe unit 21 Stage 22 Reference surface 23 Support point (piezoelectric element, X direction) 24 Support point (piezoelectric element) 25 Support point 301 to 303 Cantilever unit 40 Silicon substrate 41 Cantilever 42 Electrode chip 43 Hole 51 Silicon nitride film 52 Opening 53 Base electrode 54 Piezoelectric Body layer 55 Intermediate electrode 56 Piezoelectric layer 57 Upper electrode 58 Protective layer 62 Probe electrode attachment 63, 66 Tilt mechanism 64 Z direction fine movement / coarse movement mechanism 67 XY direction fine movement / coarse movement mechanism 68 Interface 70 Plural probe electrode substrates 71 Leaf spring 72, 73, 74 Multilayer piezoelectric element 75 Steel ball Reference Signs List 80 control circuit 81 write / read circuit 82 bias circuit 83 tunnel current detector (for recording / reproduction) 84 positioning circuit 85 servo circuit 86 Z-direction drive circuit 87 XY-direction drive circuit 88 position detection circuit 89 tilt mechanism drive circuit 90 tunnel current detection (For surface matching between a substrate and a plurality of probes) 91 Substrate 92 Underlayer electrode 93 Recording layer

Continuing on the front page (72) Inventor Toshihiko Takeda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Ken Eguchi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Masahiro Tagawa 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Miyazaki Toshihiko 3-30-2 Shimomaruko 3-chome, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-2-147803 (JP, A) JP-A-4-337540 (JP, A) JP-A-4-212001 (JP, A) JP-A-4-186111 (JP, A) JP-A-4 -98633 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) G11B 9/00

Claims (33)

(57) [Claims] 1. A scanning probe microscope technique in which a probe is relatively scanned on a sample to measure a surface state of the sample while detecting various interactions depending on a distance between the probe and the sample. In the information processing device used, at least 2
More than a plurality of probes, a sample table for mounting a recording medium, and to relatively scan the probe on the sample, whether the probe itself can be driven, or whether the sample table can be driven,
Or, a drive mechanism that can drive both the probe and the sample table in parallel and independently of each other, an XY axis tilt mechanism that tilts the sample table surface, and a signal component corresponding to the detected surface state or recorded information. An amplitude detection circuit for detecting the amplitude of a signal component having an arbitrary spatial frequency; and an X-ray detector for detecting the amplitude to be 0 or a value as small as possible.
An information processing apparatus comprising at least a feedback circuit for controlling a Y-axis tilting mechanism, and a distance adjusting mechanism capable of independently adjusting a distance between a probe and a surface of a recording medium for each probe. 2. The information processing apparatus according to claim 1, wherein the XY axis tilt mechanism is an XY axis tilt stage or an XY axis gonio stage. 3. The information processing apparatus according to claim 2, wherein the tilt mechanism of the XY axis tilt stage utilizes at least two piezoelectric elements. 4. A recording medium is placed on a sample table, and at least one of the plurality of probes is relatively scanned in an arbitrary area or section on the recording medium, and the surface of the recording medium (X Means for detecting the amount of tilt between the '-Y' plane) and the scanning surface (XY plane) of the probe, and means for controlling the XY axis tilting mechanism so as to minimize the amount of tilt. The information processing apparatus according to claim 1, wherein: 5. The information processing apparatus according to claim 1, wherein a tunnel current is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning tunnel microscope. 6. The information processing apparatus according to claim 1, wherein an atomic force is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning atomic force microscope. 7. The information processing apparatus according to claim 1, wherein a magnetic force is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning magnetic microscope. 8. The information processing apparatus according to claim 1, wherein ion conduction is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning ion conduction microscope. 9. The information processing apparatus according to claim 1, wherein sound is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning acoustic microscope. 10. The method according to claim 1, wherein evanescent light is used as the interaction between the probe and the sample, that is, the scanning probe microscope is a scanning near-field optical microscope.
An information processing apparatus according to claim 1. 11. The information processing apparatus according to claim 1, wherein a lock-in amplifier is used as the amplitude detection circuit. 12. The information processing apparatus according to claim 1, wherein an arbitrary spatial frequency is equal to a sweep frequency in a scanning plane direction of the probe. 13. The information processing apparatus according to claim 1, wherein a plurality of probes are formed on a plurality of cantilevers. 14. The information processing apparatus according to claim 1, wherein the cantilever is a bimorph or a unimorph. 15. A scanning probe microscope technique for measuring the surface condition of a sample by relatively scanning the probe over a sample while detecting various interactions depending on the distance between the probe and the sample. An information processing apparatus using a plurality of probes, at least two or more, a sample stage on which a recording medium is placed, and the probe itself driven to relatively scan the probe on a sample. Or a drive mechanism that can drive the sample stage, or both can be driven in parallel and independently of each other, and an X that tilts the surface of the sample stage.
A Y-axis tilt mechanism, an amplitude detection circuit for detecting the amplitude of a signal component having an arbitrary spatial frequency among the signal components corresponding to the detected surface state or recorded information, and a detected amplitude of 0 or as small as possible. XY to be a value
An information processing apparatus including at least a feedback circuit for controlling the axis tilting mechanism and a distance adjusting mechanism capable of independently adjusting the distance between the probe and the surface of the recording medium for each of the probes is used. Is used to scan an arbitrary section on the recording medium to check the surface state of the section, and then determine whether the signal corresponding to the surface state obtained by such an operation is equal to the sweep frequency of the probe. Alternatively, the amplitude of the signal component having a close frequency is detected, the XY axis tilting mechanism is controlled so that the amplitude becomes substantially zero, and the above-described operation is performed in at least one direction different from the first direction (that is, matching). Then, the distance between the probe and the surface of the recording medium is adjusted to be a constant value for all the remaining probes, and all the operations described above are performed. An information processing method after recording of information, and performs reproduction or erasure. 16. The information processing method according to claim 15, wherein the XY axis tilting mechanism is an XY axis tilting stage or an XY axis gonio stage. 17. The tilt mechanism of the XY axis tilt stage,
17. The information processing method according to claim 16, wherein at least two piezoelectric elements are used. 18. The information processing method according to claim 15, wherein a tunnel current is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning tunnel microscope. 19. The information processing method according to claim 15, wherein an atomic force is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning atomic force microscope. 20. The information processing method according to claim 15, wherein a magnetic force is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning magnetic force microscope. 21. The information processing method according to claim 15, wherein ion conduction is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning ion conduction microscope. 22. The information processing method according to claim 15, wherein sound is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning acoustic microscope. 23. The method according to claim 1, wherein evanescent light is used as an interaction between the probe and the sample, that is, the scanning probe microscope is a scanning near-field optical microscope.
5. The information processing method according to item 5. 24. The information processing method according to claim 15, wherein a lock-in amplifier is used as the amplitude detection circuit. 25. The information processing method according to claim 15, wherein an arbitrary spatial frequency is equal to an in-scan direction sweep frequency of the probe. 26. A recording medium for processing information, a plurality of probe electrodes for writing and reading provided opposite to the recording medium, and a voltage for applying a voltage from the plurality of probe electrodes to the recording medium. Applying means, current detecting means for detecting a current flowing from the plurality of probe electrodes to the recording medium, means for relatively moving the recording medium and the plurality of probe electrodes, the plurality of probe electrodes and the recording medium A first plane aligning means capable of adjusting a positional relationship between the plurality of probe electrode surfaces (X "-Y" surface) and the recording medium surface (X'-Y 'surface) by a tilt mechanism provided in A tilt mechanism capable of adjusting a positional relationship between a relative movement surface between a recording medium and the plurality of probe electrodes, that is, a scanning surface (XY surface) and a surface of the recording medium (X′-Y ′ surface). At least the second surface matching means according to In the information processing apparatus, the specific probe electrode is used as the sensor for the first and / or second surface matching, and the plurality of probe electrode surfaces are used by the first and second surface matching means. (X "-Y" plane) and the surface of the recording medium (X'-Y 'plane)
Are adjusted in parallel with each other with respect to the scanning plane (XY plane). 27. An information processing apparatus in which a plurality of probe electrodes are arranged in a line in the same plane, wherein the first surface matching means and the second surface matching means are provided by using two of the plurality of probe electrodes. 27. The method according to claim 26, wherein the surface matching is performed using a surface matching unit. 28. The method according to claim 27, wherein two probe electrodes are provided at both ends in one row. 29. In an information processing apparatus in which a plurality of probe electrodes are arranged in a matrix on the same plane, the first surface matching means and the second surface matching means are used by using three of the plurality of probe electrodes. 27. The method according to claim 26, wherein the surface matching is performed using a surface matching unit. 30. The surface alignment according to claim 26, wherein the surface alignment is performed by a first surface alignment unit, and then the surface alignment is performed by a second surface alignment unit. Method. 31. The surface alignment according to claim 26, wherein the surface alignment is performed by the second surface alignment unit, and then the surface alignment is performed by the first surface alignment unit. Method. 32. The surface matching method according to claim 26, wherein the tilt mechanism is constituted by a piezoelectric element. 33. The surface according to claim 26, wherein, in the first surface matching means, the probe electrodes are arranged so that the specific probe electrode first approaches the tunnel region with respect to the recording medium. Matching method.