JPH0476971A - Stem for semiconductor laser - Google Patents

Stem for semiconductor laser

Info

Publication number
JPH0476971A
JPH0476971A JP2191503A JP19150390A JPH0476971A JP H0476971 A JPH0476971 A JP H0476971A JP 2191503 A JP2191503 A JP 2191503A JP 19150390 A JP19150390 A JP 19150390A JP H0476971 A JPH0476971 A JP H0476971A
Authority
JP
Japan
Prior art keywords
stem
chip
solder
bonded
submount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2191503A
Other languages
Japanese (ja)
Inventor
Mitsuo Ishii
光男 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2191503A priority Critical patent/JPH0476971A/en
Publication of JPH0476971A publication Critical patent/JPH0476971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Abstract

PURPOSE:To prevent a solder from creeping up on an inclined stand and from adhering to the surface of a PD chip by a method wherein a groove is formed in a part where the following are crossed: the side face where the inclined stand, to which a PD submount is attached and which is situated nearly in the center of a stem, is bonded to a block for heat-dissipating use; and the surface of the stem. CONSTITUTION:A groove 8 used to store a solder is formed in a part where the following are crossed: the side face where a block 3 for heat-dissipating use is bonded to an inclined stand, of a stem, to which a PD chip and a PD submount 5 are attached; and the surface of the stem 6. Thereby, when the block 3 for heat-dissipating use is pushed to the inclined stand 7 and is soldered to the stem, the solder flows into the groove 8. Consequently, it is possible to eliminate a short circuit caused when the solder adheres to the side face of the PD chip 4 and the PD submount 5 to be electrically insulated which are bonded to the inclined stand 7. When the groove 8 is formed, the block 3 for heat-dissipating use is bonded to the surface of the stem 6 and to the side face of the inclined stand 7; the central position accuracy of the stem 6 with reference to an LD chip 1 is enhanced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体レーザ装置用ステムの構造に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a stem for a semiconductor laser device.

〔従来の技術〕[Conventional technology]

第８図は、従来の半導体レーザ装置を示す断面図であり
、図に於いて、【ｌ）はレーザチップ（以下ＬＤチップ
という）　、＋２１ｆｌサブマタント、ｍ１Ｆｉ放熱用
ブロツク、４１はフォトダイオード（以下ＦＤチップと
いう）　　ｔｓｌｉｊＰＤサブマウント、１６１はステ
ム、（力はステム（６）のほぼ中央に位置した傾斜台、
＋９１　、　ｔｌｏｌは、ＬＤチッグ［１１から放射さ
れたレーザ光、α］Ｊ＃−ｉステムの隅にできる丸味で
ある。FIG. 8 is a sectional view showing a conventional semiconductor laser device. In the figure, [l] is a laser chip (hereinafter referred to as LD chip), +21fl submatant, m1Fi heat dissipation block, and 41 is a photodiode (hereinafter referred to as FD chip). (referred to as chip) tslij PD submount, 161 is the stem, (the force is a tilting table located approximately in the center of the stem (6),
+91, tlol is the roundness formed at the corner of the LD chig [laser light emitted from 11, α] J#-i stem.

次に動作について説明する。半導体レーザ装置は一般に
電流を注入する事により光を放つ電流−光変換デバイス
である。変換動″ａは３０〜４ＯＮで、残りは熱となる
。この熱を効率よく放散させる事がレーザ素子の特性劣
化を防止することになる。第８図に渋−て、ＬＤチップ
（１１は放熱の良い金属の放熱ブロック（３）に、サブ
マウント１！１を介して取付けられる。又、同様に、光
を電流に変換するデバイス、即ちＰＤチップ（４）も電
気的に絶縁であるＦＤサブマウント（６）を介して、ス
テム（６）のほぼ中央に位置し、ある傾斜角度を有する
傾斜台（７１に取付けられ、最終的にＰＤチップ＋４１
はステムｔｉ１１の中心に位置決めされる。ＰＤチップ
（４１は、この後、図示していないワイヤーで１図示し
ていないポストに電気的に接続される。Next, the operation will be explained. A semiconductor laser device is generally a current-light conversion device that emits light by injecting a current. The conversion motion "a" is 30 to 4 ON, and the remainder becomes heat. Efficiently dissipating this heat prevents the characteristics of the laser element from deteriorating. It is attached to a metal heat dissipation block (3) with good heat dissipation via a submount 1!1.Similarly, the device that converts light into electric current, that is, the PD chip (4), is also an electrically insulated FD. Via the submount (6), it is attached to the tilt table (71) which is located approximately in the center of the stem (6) and has a certain tilt angle, and finally the PD chip +41
is positioned at the center of stem ti11. The PD chip (41) is then electrically connected to a post (not shown) with a wire (not shown).

放熱用ブロック（３）に取付けられたＬＤチップ＋１１
ｒｉ、ステム（６）に対し、ＬＤチップＩｌ＋より放射
されるレーザ光がステム１６１に垂直になる様に、放熱
用ブロック（３１がステムｔ６）　Ｋ図示していない半
田を介して取付けられる。LD chip +11 attached to heat dissipation block (3)
ri, a heat radiation block (31 is the stem t6) is attached to the stem (6) via solder (not shown) so that the laser beam emitted from the LD chip Il+ is perpendicular to the stem 161.

最終的に、放熱用ブロック（３１はステム（６）の中央
に位置する傾斜台（７）の側面に押し当てられ、ＬＤチ
ップＩｌ＋の発光点がＦＤチップ（４）の中心、即ち、
ステム１６）の中心に位置する事になる。この後、ＬＤ
チップＩｌ＋は１図示しないポストに電気ｆＦＪに接続
される事になる。Ｉ、Ｄチップ＋１１に電流を流す事に
より、レーザ光ｉ９＋　、　ＩＩαが第８図に示ｆ如く
、上方、後方へと放射される。Finally, the heat dissipation block (31) is pressed against the side surface of the inclined table (7) located at the center of the stem (6), and the light emitting point of the LD chip Il+ is placed at the center of the FD chip (4), i.e.
It will be located at the center of the stem 16). After this, LD
The chip Il+ will be connected to an electrical fFJ via a post (not shown). By passing current through the I and D chips +11, laser beams i9+ and IIα are emitted upward and backward as shown in FIG. 8 f.

後方へ放射されたレーザ光（１０）は％ＰＤテップ１４
）に入射し、電流に変換されモニターされる。The laser beam (10) emitted backward is %PD step 14
), which is converted into a current and monitored.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来の半導体レーザ装置ｔは以上のように構成されてい
るので、放熱用ブロックをステムに外部より半田を供給
して、傾斜台の側面に押し当てて接着する場合に、半田
が傾斜台を乗り上げ、傾斜台に接着されているＦＤサブ
マウントの側面に付着して、ＦＤサブマウントが電気的
にショートする不具合があった。特に、部品寸法の小型
化の要求に伴ない、傾斜台の放熱用ブロックと接着する
部分の高さを低くする制約があり、益々、上記の問題が
顕著となっていた。Since the conventional semiconductor laser device t is configured as described above, when the heat dissipation block is supplied with solder from the outside to the stem and is pressed against the side of the slope table and bonded, the solder may run over the slope table. However, there was a problem in that the FD submount adhered to the side surface of the FD submount that was adhered to the tilt table, causing an electrical short circuit of the FD submount. In particular, with the demand for smaller component dimensions, there is a restriction to reduce the height of the portion of the ramp that is bonded to the heat dissipation block, and the above problem has become more and more prominent.

又、放熱用ブロックが傾斜台と接着する面と。Also, the surface where the heat dissipation block is bonded to the slope.

ステムの上面と交わる部分の隅に基本的には丸味？持つ
ことになり、放熱用ブロックを傾斜台の側面に押し当て
る場合に、放熱用ブロックが上記丸味に乗り上げること
により放熱用ブロックが傾いてしまい、ＬＤ−チツプ発
光点のステムの中心に対する位置ズレや、レーザ光の角
度ズレが発生するなどの問題点があった◎この発明は上
記の様な問題点を解消するためになされたもので、放熱
用ブロックをステムの＃ｉ斜台に押し当ててステムに半
田付けする際。Basically the corner where it meets the top of the stem is rounded? When the heat dissipation block is pressed against the side of the inclined table, the heat dissipation block rides on the roundness, causing the heat dissipation block to tilt, causing the LD-chip light emitting point to be misaligned with respect to the center of the stem. , there were problems such as angle deviation of the laser beam. ◎This invention was made to solve the above problems, and the heat dissipation block was pressed against the #i inclined base of the stem. When soldering to the stem.

傾斜台に半日が乗り上げて、ＦＤサブマウントの側面に
半田がショートすることの無＾品質的に安定な半導体レ
ーザ装置用ステムを得ることｔ目的とする。The purpose of the present invention is to obtain a stem for a semiconductor laser device that is stable in quality and is free from short-circuiting of solder to the side surface of an FD submount due to half a day riding on an inclined table.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係る半導体レーザ装置用ステムぽ、放熱用ブ
ロックがＦＤチップ及びＦＤサブマウントを取付けるス
テムの傾斜台に接着する側面とステムの上面との交わる
箇所に、半田を溜める為の溝を設けたものである。In the stem port for a semiconductor laser device according to the present invention, a groove for collecting solder is provided at the intersection of the top surface of the stem and the side surface where the heat dissipation block is bonded to the inclined base of the stem on which the FD chip and FD submount are attached. It is something.

〔作用〕[Effect]

この発明に於ける半導体レーザ装置用ステムに、放熱用
ブロックを、外部より半田供給し、傾斜台に押し当てて
、ステムに接着させる場合、従来、傾斜台を乗り上げて
いく半田が％溝の中に流れ込み、隣は半田溜めの機ｉを
為す。Conventionally, when a heat dissipation block is supplied with solder from the outside to the stem for a semiconductor laser device of the present invention, and is pressed against a slope and adhered to the stem, the solder that rides up the slope is in the groove. The solder flows into the area, and the area next to it acts as a solder reservoir.

〔実ＩＭ列〕[Real IM column]

以下、この発明に係る半導体レーザ装置用ステムの一実
施例を図について説明する。第１図に、半導体レーザ装
置の断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a stem for a semiconductor laser device according to the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a semiconductor laser device.

図において、１１１〜＋７１　、　＋９１　、１１０１
は第２図の従来例に示したものと同等であるので説明を
省略する。In the figure, 111 to +71, +91, 1101
is the same as that shown in the conventional example shown in FIG. 2, so its explanation will be omitted.

（８１は、ステム１６）のほぼ中央に位置する傾斜台（
７）の放熱用ブロック［３１と接着する側面とステム（
８）との交わる部分に設けられた溝である。(81 is a tilting table (81) located approximately in the center of the stem 16)
7) Heat dissipation block [31 and the side surface and stem (
This is a groove provided at the intersection with 8).

次に作用について説明する。レーザ光＋９１　、　ＩＩ
Ｇの放射に至る作用については従来例に述べたので説明
を省略する。この発明の特徴さして、放熱用ブロック＋
３１　ｉ傾斜台１７）に押し当ててステムに半田付けす
る際に、半田がｍ！　＋８１の中へ流れ込ら従って、傾
斜台（７１に接着されているＦＤチップ（４）並びＶＣ
電気的に絶縁であるＦＤサフマウント１６）の側面に、
半田が付着して、ショートになる不具合が解消される。Next, the effect will be explained. Laser light +91, II
The action leading to the emission of G has been described in the conventional example, so the explanation will be omitted. The feature of this invention is that the heat dissipation block +
31 i When soldering to the stem by pressing it against the inclined table 17), the solder is m! Therefore, the FD chip (4) glued to the inclined table (71) and the VC
On the side of the electrically insulating FD surf mount 16),
This solves the problem of short circuits caused by solder adhesion.

又、溝（８）全形成する事により、従来、放熱用ブロッ
ク（３１が傾斜台（７）と接着する側面とステム１６）
の上面と接着する両面の間に形成される丸味αυの形状
が無くなる事により、放熱用ブロック１３１ニ、ステム
（６１の上面及び傾斜台（〕）の側面に密接に接着きれ
、ＬＤチップ＋１１のステム（６）の中心位置精度は安
定に確保される事になる。In addition, by completely forming the groove (8), the heat dissipation block (the side surface and stem 16 where 31 is bonded to the inclined table (7))
By eliminating the rounded shape αυ formed between the top surface and both surfaces to be bonded, the heat dissipation block 131 can be closely bonded to the top surface of the stem (61 and the side surface of the inclined table ()), and the LD chip +11 The center position accuracy of the stem (6) is stably ensured.

なお、上記実施例では、半導体レーザチップについて述
べたが、ＬＥＤでもよい。In the above embodiment, a semiconductor laser chip was described, but an LED may also be used.

〔発明の効果〕〔Effect of the invention〕

以上の様に、この発明によれば、ＦＤチップを載置する
ＰＤサブマウ／トヲ取付けるステムのほぼ中央に位置す
る傾斜台の放熱用ブロックと接着する側面と、ステムの
上面との交わる箇所に溝を設けたので、放熱用ブロック
と半田により、上記傾斜台の側面に押し当てて、ステム
に半田付けする際、半田が上記傾斜台に乗り上げる事が
無くなり、半田が電気的に絶縁であるＦＤサブマウント
の側面への付着や、ＦＤチップ上面への付着が解消され
、歩留向上が期待できる効果がある。As described above, according to the present invention, a groove is formed at the intersection of the side surface of the inclined table, which is located approximately in the center of the stem to which the PD sub-mount/toe is attached, and the side surface that is bonded to the heat dissipation block, and the top surface of the stem. Since the heat dissipation block and solder are used to press against the side of the slope and solder to the stem, the solder will not ride on the slope and the solder will be electrically insulating. This eliminates adhesion to the side surfaces of the mount and the top surface of the FD chip, resulting in an effect that can be expected to improve yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図に、この発明に係る半導体レーザ装置用ステムの
一実施例による半導体レーザ装置を示す断面図、第２図
は従来の半導体レーザ装置を示す断面図である。 図において、ＩＩＩ＃’！レーザチップ、１２）はサブ
マウント、！３１ｉ放熱用ブロック、１４１はフォトダ
イオード、１６）はＰＤサブマウント、＋６１はステム
、（７）は傾斜台、＋８１ｒｉ＠、　＋９１　、　ｔ１
０１ｆｌレー−４＃：テ４ル。 尚１図中同一符号に同一、又に、相当部分を下す。FIG. 1 is a sectional view showing a semiconductor laser device according to an embodiment of the stem for a semiconductor laser device according to the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor laser device. In the figure, III#'! The laser chip, 12) is a submount,! 31i heat dissipation block, 141 is photodiode, 16) is PD submount, +61 is stem, (7) is tilting table, +81ri@, +91, t1
01fl Ray-4#: Te 4 Le. In Figure 1, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] ステムのほぼ中央位置に傾斜した傾斜台を有し、レーザ
チップ並びにサブマウントを載置した放熱用ブロックの
一面が上記傾斜台の側面に押し当てられて、上記ステム
に接着される半導体レーザ装置用ステムに於いて、上記
傾斜台の側面と上記ステムの上面と交わる箇所に、溝を
有した事を特徴とする半導体レーザ装置用ステム。For a semiconductor laser device, which has a tilted base at approximately the center of the stem, and one side of a heat dissipation block on which a laser chip and a submount are placed is pressed against the side of the tilted base and is bonded to the stem. A stem for a semiconductor laser device, characterized in that the stem has a groove at a location where the side surface of the inclined table and the top surface of the stem intersect.
JP2191503A 1990-07-18 1990-07-18 Stem for semiconductor laser Pending JPH0476971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2191503A JPH0476971A (en) 1990-07-18 1990-07-18 Stem for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2191503A JPH0476971A (en) 1990-07-18 1990-07-18 Stem for semiconductor laser

Publications (1)

Publication Number Publication Date
JPH0476971A true JPH0476971A (en) 1992-03-11

Family

ID=16275737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2191503A Pending JPH0476971A (en) 1990-07-18 1990-07-18 Stem for semiconductor laser

Country Status (1)

Country Link
JP (1) JPH0476971A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134983A (en) * 1987-11-19 1989-05-26 Mitsubishi Electric Corp Sub-mount for optical semiconductor element
JPH01138776A (en) * 1987-11-25 1989-05-31 Mitsubishi Electric Corp Submount for semiconductor laser device
JPH0297081A (en) * 1988-10-03 1990-04-09 Mitsubishi Electric Corp Semiconductor array laser
JPH02179179A (en) * 1988-12-29 1990-07-12 Matsushita Electric Ind Co Ltd Optical video disk

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01134983A (en) * 1987-11-19 1989-05-26 Mitsubishi Electric Corp Sub-mount for optical semiconductor element
JPH01138776A (en) * 1987-11-25 1989-05-31 Mitsubishi Electric Corp Submount for semiconductor laser device
JPH0297081A (en) * 1988-10-03 1990-04-09 Mitsubishi Electric Corp Semiconductor array laser
JPH02179179A (en) * 1988-12-29 1990-07-12 Matsushita Electric Ind Co Ltd Optical video disk

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