JPH047658U - - Google Patents

Info

Publication number
JPH047658U
JPH047658U JP4958690U JP4958690U JPH047658U JP H047658 U JPH047658 U JP H047658U JP 4958690 U JP4958690 U JP 4958690U JP 4958690 U JP4958690 U JP 4958690U JP H047658 U JPH047658 U JP H047658U
Authority
JP
Japan
Prior art keywords
electrode
sample
processing apparatus
holding means
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4958690U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4958690U priority Critical patent/JPH047658U/ja
Publication of JPH047658U publication Critical patent/JPH047658U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本案装置の要部の構成を示す縦断面図
、第2図及び第3図は本案装置と従来装置とにお
けるパーテイクルの挙動を示す模式図である。 1……試料、2……処理室、3……静電チヤツ
ク、4……集塵器、42……集塵部、42a……
電極、42b……絶縁体、P……パーテイクル。
FIG. 1 is a longitudinal cross-sectional view showing the configuration of the essential parts of the device of the present invention, and FIGS. 2 and 3 are schematic diagrams showing the behavior of particles in the device of the present invention and the conventional device. 1... Sample, 2... Processing chamber, 3... Electrostatic chuck, 4... Dust collector, 42... Dust collection section, 42a...
Electrode, 42b...Insulator, P...Particle.

Claims (1)

【実用新案登録請求の範囲】 処理室内に配された保持手段に試料を保持させ
、該試料にプラズマを照射して所定の処理を施す
プラズマ処理装置において、 電極への電圧印加により、該電極の外側を被覆
する絶縁体の表面に静電力を発生して集塵作用を
なす集塵手段を、前記保持手段の周辺に具備する
ことを特徴とするプラズマ処理装置。
[Claims for Utility Model Registration] In a plasma processing apparatus in which a sample is held in a holding means disposed in a processing chamber and a predetermined treatment is performed by irradiating the sample with plasma, the voltage applied to the electrode is applied to the electrode. A plasma processing apparatus characterized in that a dust collecting means for collecting dust by generating an electrostatic force on the surface of an insulator covering the outside thereof is provided around the holding means.
JP4958690U 1990-05-10 1990-05-10 Pending JPH047658U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4958690U JPH047658U (en) 1990-05-10 1990-05-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4958690U JPH047658U (en) 1990-05-10 1990-05-10

Publications (1)

Publication Number Publication Date
JPH047658U true JPH047658U (en) 1992-01-23

Family

ID=31567405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4958690U Pending JPH047658U (en) 1990-05-10 1990-05-10

Country Status (1)

Country Link
JP (1) JPH047658U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016385A1 (en) * 1998-09-14 2000-03-23 Tokyo Electron Limited Plasma reactor
JP2015167157A (en) * 2014-03-03 2015-09-24 東京エレクトロン株式会社 Semiconductor production apparatus, deposition method and storage medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000016385A1 (en) * 1998-09-14 2000-03-23 Tokyo Electron Limited Plasma reactor
JP2015167157A (en) * 2014-03-03 2015-09-24 東京エレクトロン株式会社 Semiconductor production apparatus, deposition method and storage medium

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