JPH047658U - - Google Patents
Info
- Publication number
- JPH047658U JPH047658U JP4958690U JP4958690U JPH047658U JP H047658 U JPH047658 U JP H047658U JP 4958690 U JP4958690 U JP 4958690U JP 4958690 U JP4958690 U JP 4958690U JP H047658 U JPH047658 U JP H047658U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- sample
- processing apparatus
- holding means
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000428 dust Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Description
第1図は本案装置の要部の構成を示す縦断面図
、第2図及び第3図は本案装置と従来装置とにお
けるパーテイクルの挙動を示す模式図である。
1……試料、2……処理室、3……静電チヤツ
ク、4……集塵器、42……集塵部、42a……
電極、42b……絶縁体、P……パーテイクル。
FIG. 1 is a longitudinal cross-sectional view showing the configuration of the essential parts of the device of the present invention, and FIGS. 2 and 3 are schematic diagrams showing the behavior of particles in the device of the present invention and the conventional device. 1... Sample, 2... Processing chamber, 3... Electrostatic chuck, 4... Dust collector, 42... Dust collection section, 42a...
Electrode, 42b...Insulator, P...Particle.
Claims (1)
、該試料にプラズマを照射して所定の処理を施す
プラズマ処理装置において、 電極への電圧印加により、該電極の外側を被覆
する絶縁体の表面に静電力を発生して集塵作用を
なす集塵手段を、前記保持手段の周辺に具備する
ことを特徴とするプラズマ処理装置。[Claims for Utility Model Registration] In a plasma processing apparatus in which a sample is held in a holding means disposed in a processing chamber and a predetermined treatment is performed by irradiating the sample with plasma, the voltage applied to the electrode is applied to the electrode. A plasma processing apparatus characterized in that a dust collecting means for collecting dust by generating an electrostatic force on the surface of an insulator covering the outside thereof is provided around the holding means.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4958690U JPH047658U (en) | 1990-05-10 | 1990-05-10 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4958690U JPH047658U (en) | 1990-05-10 | 1990-05-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH047658U true JPH047658U (en) | 1992-01-23 |
Family
ID=31567405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4958690U Pending JPH047658U (en) | 1990-05-10 | 1990-05-10 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH047658U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000016385A1 (en) * | 1998-09-14 | 2000-03-23 | Tokyo Electron Limited | Plasma reactor |
JP2015167157A (en) * | 2014-03-03 | 2015-09-24 | 東京エレクトロン株式会社 | Semiconductor production apparatus, deposition method and storage medium |
-
1990
- 1990-05-10 JP JP4958690U patent/JPH047658U/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000016385A1 (en) * | 1998-09-14 | 2000-03-23 | Tokyo Electron Limited | Plasma reactor |
JP2015167157A (en) * | 2014-03-03 | 2015-09-24 | 東京エレクトロン株式会社 | Semiconductor production apparatus, deposition method and storage medium |
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