JPH0474833A - Nanocomposite shape memory material - Google Patents
Nanocomposite shape memory materialInfo
- Publication number
- JPH0474833A JPH0474833A JP2189063A JP18906390A JPH0474833A JP H0474833 A JPH0474833 A JP H0474833A JP 2189063 A JP2189063 A JP 2189063A JP 18906390 A JP18906390 A JP 18906390A JP H0474833 A JPH0474833 A JP H0474833A
- Authority
- JP
- Japan
- Prior art keywords
- substance
- shape memory
- alloy
- nanocomposite
- high electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002114 nanocomposite Substances 0.000 title claims abstract description 17
- 239000012781 shape memory material Substances 0.000 title claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 19
- 239000000956 alloy Substances 0.000 claims abstract description 19
- 230000009466 transformation Effects 0.000 claims abstract description 18
- 229910000734 martensite Inorganic materials 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 22
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 6
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 4
- 229910004337 Ti-Ni Inorganic materials 0.000 abstract description 3
- 229910011209 Ti—Ni Inorganic materials 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 abstract description 3
- 229910017535 Cu-Al-Ni Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- 229910017773 Cu-Zn-Al Inorganic materials 0.000 abstract 1
- 229910018643 Mn—Si Inorganic materials 0.000 abstract 1
- 230000003455 independent Effects 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 238000011084 recovery Methods 0.000 description 9
- 230000035882 stress Effects 0.000 description 7
- 229910000990 Ni alloy Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 210000000436 anus Anatomy 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明（よ 制御システムの分野に広く応用できるナノ
コンポジット形状記憶の材料に関する。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to nanocomposite shape memory materials which can be widely applied in the field of control systems.
従来の技術
上記の分野では従来から形状記憶合金力文 形状記憶素
子として用いられてきｔも
例えばＴｉ−Ｎｉ合金を直接通電させて加熱し 位置動
作速度、形状回復応力をコントロールする方法に使用さ
れている。Conventional technology In the above-mentioned fields, shape memory alloys have been used as shape memory elements. For example, Ti-Ni alloys have been used in a method to control the positional movement speed and shape recovery stress by heating the Ti-Ni alloy by directly energizing it. There is.
発明が解決しようとする課題
しかしながら−Ｆ記従来の形状記憶合金でζ友 電気抵
抗が低い（１０−’〜１０−’［Ω・ｃｍ］）た数 加
熱に要する電流を多く必要とし かつ形状回復に時間が
かかるた数 形状記憶素子としての動作速度が遅く形状
回復応力等のコントロールが困難であるという課題があ
った
本発明は上記従来の課題を解決するものであり、高電気
抵抗（１０−’〜１０８［Ω・ｃｍ］）を有すことによ
り動作速度が早く、形状回復のコントロールがし易い形
状記憶機能を有するナノコンポジット形状記憶材料を提
供することを目的とするものであ課題を解決するための
手段
上記目的を達成するために本発明のナノコンポジット形
状記憶材料は マルテンサイト変態をする合金母相粒子
（第１の物質）が高電気抵抗の物質（第２の物質）と、
第１の物質および第２の物質とは異なる高電気抵抗の物
質（第３の物質）とでその表面が覆われて焼結されてな
るものである。Problems to be Solved by the Invention However, conventional shape memory alloys have low electrical resistance (10-' to 10-' [Ωcm]), require a large amount of current for heating, and are difficult to recover their shape. The present invention solves the above-mentioned problems of the conventional shape memory element, such as slow operation speed and difficulty in controlling shape recovery stress. The purpose is to provide a nanocomposite shape memory material that has a shape memory function that allows for fast operation speed and easy control of shape recovery by having a resistance value of 108 [Ωcm]), thereby solving the problem. Means for achieving the above object In the nanocomposite shape memory material of the present invention, alloy matrix particles (first substance) that undergo martensitic transformation are formed with a substance (second substance) having high electrical resistance;
The surface is covered and sintered with a high electrical resistance material (third material) different from the first material and the second material.
作用
したがって本発明によれば 高電気抵抗の物質で覆われ
た合金粒子を焼結することによって合金粒子はほぼ相互
に独立した構造（不連続の構造）になも したがって合
金粒子の表面に形成された高電気抵抗層によりナノコン
ポジット材料の高電気抵抗が確保される。Therefore, according to the present invention, by sintering the alloy particles covered with a substance having high electrical resistance, the alloy particles are formed into an almost mutually independent structure (a discontinuous structure) on the surface of the alloy particles. The high electrical resistance layer ensures high electrical resistance of the nanocomposite material.
その結果 通電による自己加熱の制御が容易になり、動
作速度の高速（Ｌ 形状回復応力の精密な制御が可能
となる。As a result, self-heating due to energization can be easily controlled, allowing for high operating speed (accurate control of L-shape recovery stress).
実施例
以下本発明の一実施例について詳しく説明すも本発明の
ナノコンポジット形状記憶材料は マルテンサイト変態
をする合金母相粒子を第１の物質とし 高電気抵抗の物
質を第２の物質とし 上記第１の物質および第２の物質
いずれとも異なる高電気抵抗の物質を第３の物質とＬ
第２および第３の物質で第１の物質をほぼ覆う構成をと
した焼結体である。EXAMPLE Hereinafter, an example of the present invention will be described in detail.The nanocomposite shape memory material of the present invention uses alloy matrix particles that undergo martensitic transformation as the first substance, and a substance with high electrical resistance as the second substance. A substance with high electrical resistance that is different from both the first substance and the second substance is used as a third substance.
The sintered body has a structure in which the first material is substantially covered with the second and third materials.
第１の物質としては マルテンサイト変態をするＴｉ−
Ｎｉ、 Ｆｅ−Ｍｎ−３ｉ、 Ｃｕ−Ａｌ−Ｎｉ、 Ｃ
ｕ−Ｚｎ−Ａ１等よりなる合金粒子があげられる。The first substance is Ti- which undergoes martensitic transformation.
Ni, Fe-Mn-3i, Cu-Al-Ni, C
Examples include alloy particles made of u-Zn-A1 and the like.
第２および第３の物質としてＩＬ Ａｌ２Ｏ３、ＡＩ
Ｎ、 ＺｒＯ２、ＭｇＯ，Ｂ２Ｏ３、Ｙ２Ｏ３、ＭｇＯ
，Ｂｉ２Ｏ３，ＰｂＯ，ＴｉｘＯ，、ＦｅａＯ３等があ
げられる。IL Al2O3, AI as second and third substances
N, ZrO2, MgO, B2O3, Y2O3, MgO
, Bi2O3, PbO, TixO, and FeaO3.
以下具体的な実施例をあけて説明する。Specific examples will be explained below.
実施例１
組成が重量％（以後ｗｔ％と記す）比で８２．１ｗｔ％
Ｃｕ１３、９ｗｔ％Ａｌ−４，０ｗｔ％Ｎｉ合金の球状
粉末（平均粒径約５０μｍ）をエトキシシランの水溶液
に浸し 撹拌させた 次にこの溶液を吸引ろ過した後、
８０℃で乾燥させると、厚さ１１００ｎの５１０２薄膜
が粉末の表面に形成された この粉体にＹ２Ｏ３を０．
２ｗｔ％添加した後、８００［ｋｇ／ ｃｍ２］の圧力
を加え 真空中にて８００℃でホットプレスを行１．ｋ
高密度（相対密度９９％）に焼結 焼き入れを行っ
てナノコンポジット形状記憶材料を得旭
このナノコンポジット形状記憶材料の変態温度ζＬ
Ｍｓ＝７ｔ、 Ｍｆ＝２ｔ、 Ａｓ＝２６ｔ、
Ａｆ＝４５℃であり、電気抵抗率ρは ρ＝７ｘ１０’
［Ω・ｃｍ］であつ九このたム 通電量制御によるマル
テンサイト相から母相への逆変態応力（０〜１０［ｋｇ
／ｍｍ２］）の正確なコントロールが容易になつ九
実施例２
大気中で、組成が８２．１ｗｔ％Ｃｕ−１３，９ｗｔ％
Ａｌ−４，０ｗｔ％Ｎｉ合金の球状粉末（平均粒径約５
０μｍ）を８００℃で１０分熱処理することによって厚
さ数ｎｍのＡｌ２Ｏ３の絶縁膜を表面に形成した この
粉体にＹ２Ｏ３を０．２ｗｔ％添加したａ ８００［
ｋｇ／Ｃｍ”］の圧力を加え 真空中にて８００℃でホ
ットプレスを行１．Ｘ、高密度（相対密度９９％）に焼
結 焼き入れを行ってナノコンポジット形状記憶材料を
得た
このナノコンポジット形状記憶材料の変態温度（よ Ｍ
ｓ＝５″′Ｃ，、Ｍｆ＝−２肛 Ａｓ＝２０覧 Ａｆ＝
４０℃であり、電気抵抗率ρ（よ ρ＝４Ｘ１０２［Ω
・ｃｍ］であったこのた取 通電量制御によるマルテン
サイト相から母相への逆変態応力（０〜１０［ｋｇ／ｍ
ｍ２］）の正確なコントロールが容易になっ九
実施例３
粒径が２０μｍの４４．３４ｗｔ％Ｔｉ−５５，６６ｗ
ｔ％Ｎｉ合金の球状粉末と粒径が１１００ｎのＺｒＯ２
の球状粉末を混合して、合金粉の表面にＺｒＯ２粉を付
着させてコーティングした さらに焼結助剤としてＢ１
２（ｈの微粉末（０，１μｍ以下）を合金粉に対して０
．５ｗｔ％添力ｌ 母相粒子表面を固定化した後、それ
らの混合粉末を１０００℃１ ｈ ｒ、 真空中にて１
０００［ｋｇ／Ｃｍ２］の圧力を加えてホットプレスを
行し＼ 氷水中に投入して焼き入れ さらにその焼結体
を４００℃で、ｌｈｒ時効処理してナノコンポジット形
状記憶材料を作製し九このナノコンポジット形状記憶材
料のマルテンサイト変態温度ＧＬ Ｍｓ＝１０ｔ、
Ｍｆ＝２０ｔ、 Ａｓ＝３０ｔ。Example 1 Composition is 82.1 wt% in weight% (hereinafter referred to as wt%) ratio
A spherical powder of Cu13, 9wt% Al-4,0wt%Ni alloy (average particle size of about 50 μm) was immersed in an aqueous solution of ethoxysilane and stirred. Next, this solution was suction-filtered, and then
When dried at 80°C, a 5102 thin film with a thickness of 1100 nm was formed on the surface of the powder.
After adding 2 wt%, a pressure of 800 [kg/cm2] was applied and hot pressing was performed at 800°C in a vacuum.1. k
The nanocomposite shape memory material is obtained by sintering and quenching to a high density (99% relative density).Transformation temperature ζL of the nanocomposite shape memory material
Ms=7t, Mf=2t, As=26t,
Af=45℃, and electrical resistivity ρ is ρ=7x10'
[Ω・cm] Reverse transformation stress from martensite phase to parent phase (0 to 10 [kg
/mm2])) Example 2 In the atmosphere, the composition is 82.1 wt% Cu-13.9 wt%
Spherical powder of Al-4.0wt%Ni alloy (average particle size approximately 5
A 800[
kg/Cm"] and hot-pressed at 800℃ in a vacuum to obtain a nanocomposite shape memory material. Transformation temperature of composite shape memory material (yo M
s=5″′C,, Mf=-2 anus As=20 view Af=
The temperature is 40℃, and the electrical resistivity ρ (ρ=4×102[Ω
The reverse transformation stress from the martensitic phase to the parent phase (0 to 10 [kg/m
Example 3 44.34 wt% Ti-55,66w with particle size of 20 μm
Spherical powder of t%Ni alloy and ZrO2 with particle size of 1100n
spherical powder was mixed and coated with ZrO2 powder attached to the surface of the alloy powder.Additionally, B1 was added as a sintering aid.
2 (h fine powder (0.1 μm or less) to alloy powder
．． 5wt% addition l After fixing the surface of the matrix particles, the mixed powder was heated at 1000°C for 1 hour in a vacuum for 1 hour.
The sintered body was hot pressed under a pressure of 000 [kg/Cm2] and quenched in ice water.The sintered body was then aged at 400°C for 1 hour to produce a nanocomposite shape memory material. Martensitic transformation temperature GL Ms of nanocomposite shape memory material = 10t,
Mf=20t, As=30t.
Ａｆ＝４０℃で、Ｒ相変態温度は３５℃前後であり、電
気抵抗率ρ（よ ρ＝３Ｘ １０’［Ω・ｃｍ］であっ
九Ｒ相変態のみを利用して形状記憶素子として利用する
場合法 ５［Ｖ］、 １［ｍＡｌの通電量で歪の回復（
０，５％）がみられ 繰り返し寿命特性は１０４回以上
であった一人 マルテンサイト逆変態を利用した場合
は 実施例１および２と同様に通電量で形状回復応力を
２０［ｋｇ／ｍｍ２］までの範囲で正確にコントロール
することが可能であった
比較例
４４、３４ｗｔ％Ｔｉ−５５，６６ｗｔ％Ｎｉ合金のイ
ンゴットを真空中で１０００℃、ｌｈｒ溶体化処理した
後、氷水中に投入して焼き入れ さらに真空中で４００
℃、ｌｈｒ時効処理を行し＼ 形状記憶合金を得九
この形状記憶合金の変態温度？ｔ Ｍｓ＝Ｉ５菰Ｍｆ
１２℃、 Ａｓ＝２５℃、 Ａｆ＝３７℃であり、電気
抵抗率ρ（戴ρ＝ｌ ｘ １０−’［Ω・ｃｍ］であっ
旭通電によるマルテンサイト相から母相への逆変態（形
状回復）に（よ ３０［Ａｌの電流が必要であったまた
通電による形状回復応力（０〜３０［ｋｇ／ｍｍ２］
）の正確なコントロールは困難であったまたＣｕ−Ａｌ
−Ｎｉ合金およびＣｕ−Ｚｎ−Ａ１合金においても電気
抵抗率が約２Ｘ１０−’［Ω・ｃｍ］と低いために上記
比較例と同様の問題か生じた
このように上記実施例によれは マルテンサイト変態を
する合金粒子の表面を高電気抵抗の物質で被覆して焼結
することにより、高電気抵抗の形状記憶材料が形成され
るため通電による形状回復制御が容易になる。When Af = 40°C, the R phase transformation temperature is around 35°C, and the electrical resistivity ρ (ρ = 3X 10' [Ω cm]) is used as a shape memory element using only the R phase transformation. Case method Strain recovery with current flow of 5 [V] and 1 [mAl
0.5%) was observed, and the repeated life characteristic was 104 times or more.When martensitic reverse transformation was used, the shape recovery stress could be increased to 20 [kg/mm2] with the same amount of current as in Examples 1 and 2. Comparative Example 44, an ingot of 34 wt% Ti-55, 66 wt% Ni alloy was solution-treated in vacuum at 1000°C for lhr, and then placed in ice water and baked. Insert further 400 min in vacuum
℃, lhr aging treatment to obtain a shape memory alloy.9 What is the transformation temperature of this shape memory alloy? t Ms=I5Mf
12°C, As = 25°C, Af = 37°C, and the electrical resistivity ρ (Dai = l x 10-' [Ω cm]). A current of 30 [aluminum] was required for shape recovery stress (0 to 30 [kg/mm2]
) was difficult to accurately control.
-Ni alloy and Cu-Zn-A1 alloy also have a low electrical resistivity of about 2X10-' [Ωcm], so the same problem as the above comparative example occurred.As shown in the above example, martensite By coating the surface of the alloy particles undergoing transformation with a material having high electrical resistance and sintering the material, a shape memory material having high electrical resistance is formed, which facilitates control of shape recovery by energization.
発明の効果
上記実施例より明らかなように本発明（表 マルテンサ
イト変態をする合金母相粒子（ｍｌの物質）が高電気抵
抗の物質（第２の物質）と、第１の物質および第２の物
質とは異なる高電気抵抗の物質（第３の物質）とで表面
が覆われて焼結されてなることにより、通電による自己
加熱の制御か容易になり、動作速度の高速化および形状
回復の制御を精密に行うことができるなどの効果が得ら
れるものである。Effects of the Invention As is clear from the above examples, the present invention (Table 1) The alloy matrix particles (ml substance) that undergo martensitic transformation are composed of a high electrical resistance substance (second substance), a first substance and a second substance. By covering the surface with a material (third material) that has high electrical resistance and is sintered, it becomes easier to control self-heating due to energization, increasing operating speed and shape recovery. This provides advantages such as being able to control accurately.
Claims (3)
物質）が高電気抵抗の物質（第２の物質）と第１の物質
および第２の物質とは異なる高電気抵抗の物質（第３の
物質）とでその表面が覆われて焼結されてなるナノコン
ポジット形状記憶材料。(1) The alloy matrix particles (first substance) that undergo martensitic transformation are formed into a high electrical resistance substance (second substance) and a high electrical resistance substance (second substance) different from the first substance and second substance. A nanocomposite shape memory material whose surface is covered with and sintered with (substance 3).
する物質の少なくとも一種以上の酸化物または窒化物を
主成分とする薄層である請求項１記載のナノコンポジッ
ト形状記憶材料。(2) The nanocomposite shape memory material according to claim 1, wherein the second substance and the third substance are thin layers mainly containing at least one oxide or nitride of the substances constituting the first substance. .
する物質の少なくとも一種以上の酸化物または窒化物を
主成分とする粉末で、第１の物質に付着されてなる請求
項１記載のナノコンポジット形状記憶材料。(3) A claim in which the second substance and the third substance are powders whose main component is at least one oxide or nitride of the substances constituting the first substance, and are attached to the first substance. 1. Nanocomposite shape memory material according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2189063A JPH076012B2 (en) | 1990-07-16 | 1990-07-16 | Nanocomposite shape memory material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2189063A JPH076012B2 (en) | 1990-07-16 | 1990-07-16 | Nanocomposite shape memory material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0474833A true JPH0474833A (en) | 1992-03-10 |
| JPH076012B2 JPH076012B2 (en) | 1995-01-25 |
Family
ID=16234677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2189063A Expired - Fee Related JPH076012B2 (en) | 1990-07-16 | 1990-07-16 | Nanocomposite shape memory material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH076012B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983152A (en) * | 2019-12-27 | 2020-04-10 | 燕山大学 | Fe-Mn-Si-Cr-Ni based shape memory alloy and preparation method thereof |
| CN116024449A (en) * | 2022-12-14 | 2023-04-28 | 中国石油大学(北京) | Preparation method of functionally graded shape memory alloy |
-
1990
- 1990-07-16 JP JP2189063A patent/JPH076012B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983152A (en) * | 2019-12-27 | 2020-04-10 | 燕山大学 | Fe-Mn-Si-Cr-Ni based shape memory alloy and preparation method thereof |
| CN110983152B (en) * | 2019-12-27 | 2020-10-30 | 燕山大学 | Fe-Mn-Si-Cr-Ni based shape memory alloy and preparation method thereof |
| CN116024449A (en) * | 2022-12-14 | 2023-04-28 | 中国石油大学(北京) | Preparation method of functionally graded shape memory alloy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH076012B2 (en) | 1995-01-25 |
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