JPH0468518A - Inspection method for mask registration and pseudo wafer used for it - Google Patents
Inspection method for mask registration and pseudo wafer used for itInfo
- Publication number
- JPH0468518A JPH0468518A JP2180458A JP18045890A JPH0468518A JP H0468518 A JPH0468518 A JP H0468518A JP 2180458 A JP2180458 A JP 2180458A JP 18045890 A JP18045890 A JP 18045890A JP H0468518 A JPH0468518 A JP H0468518A
- Authority
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- Prior art keywords
- ray
- pseudo wafer
- mark
- mask
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000007689 inspection Methods 0.000 title claims description 5
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 238000011156 evaluation Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 230000035897 transcription Effects 0.000 abstract 1
- 238000013518 transcription Methods 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体装置を製造する際のマスク位置合わせ
検査方法およびそれに用いる擬似ウェハに関する。ここ
に擬似ウェハというのは、被処理用半導体ウェハに外径
２寸法、材質等を似せたもので、検査専用のものをいう
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a mask alignment inspection method used in manufacturing semiconductor devices and a pseudo wafer used therein. The pseudo wafer here refers to a wafer that resembles a semiconductor wafer to be processed in two outer diameter dimensions, material, etc., and is used exclusively for inspection.
（従来の技術）
半導体装置の製造における従来の複数のマスクの位置合
わせ方法の一例について第８図を参照して以下に説明す
る。まず、第８図（ａ）に示すようにウェハ２１上のア
ラインメントマーク２２と第１の位置合わせ精度の読み
取りウェハマーク２３を形成する。次に第８図（ｂ）に
示すようにその上にレジスト２４を塗布して、その後、
第８図（Ｃ）のようにウェハ２１上のアラインメントマ
ーク２２に対して位置合わせを行い、マスク上の読み取
りマーク２３をウェハ２１上のレジスト２４に転写して
、現像を行い、第２の位置合わせ精度の読み取りレジス
トマーク２４ａを形成すると第８図（ｄ）のようになる
。(Prior Art) An example of a conventional method for aligning a plurality of masks in manufacturing a semiconductor device will be described below with reference to FIG. First, as shown in FIG. 8(a), an alignment mark 22 on a wafer 21 and a reading wafer mark 23 having a first alignment accuracy are formed. Next, as shown in FIG. 8(b), a resist 24 is applied thereon, and then,
As shown in FIG. 8(C), alignment is performed with respect to the alignment mark 22 on the wafer 21, the reading mark 23 on the mask is transferred to the resist 24 on the wafer 21, development is performed, and the second position is When the registration mark 24a is read with alignment accuracy and formed, it becomes as shown in FIG. 8(d).
第１の位置合わせ精度の読み取りウェハマーク２３と第
２の位置合わせ精度の読み取りレジストマーク２４ａと
の間の距離ｘ１およびＸ、を測長し、（Ｘ、 −Ｘ、）
／ ２から合わせ誤差を計算により求める。The distances x1 and X between the read wafer mark 23 with the first alignment accuracy and the read registration mark 24a with the second alignment accuracy are measured, and (X, -X,)
Calculate the alignment error from /2.
また、Ｘ線マスク間の精度を測定する場合は、第８図（
Ｃ）で異なるマスクを用いて、第８図（ｂ）。In addition, when measuring the accuracy between X-ray masks, see Figure 8 (
Figure 8(b) using a different mask in C).
（Ｃ）の工程を繰り返し、第３のレジストマークを形成
する。その後、マークの測長を行い、第２のレジストマ
ークとの位置関係からＸ線マスｄ間の精度を求める。Repeat the step (C) to form a third registration mark. Thereafter, the length of the mark is measured, and the accuracy between the X-ray masses d is determined from the positional relationship with the second registration mark.
（発明が解決しようとする課題）
このように位置合わせ精度やマスク間の精度を測定する
場合、レジスト上へマスクマークを転写し、レジストマ
ークを形成する工程が必要である。(Problems to be Solved by the Invention) When measuring the alignment accuracy and the accuracy between masks in this way, a step of transferring a mask mark onto a resist and forming a resist mark is required.
この工程は、レジスト塗布−レシストベーク−露光−視
像−ベークと工程数が多く、非常に時間を要する。This step requires a large number of steps, including resist coating, resist baking, exposure, visual image, and baking, and is very time consuming.
また、レジスト塗布むらなどによって、レジストマーク
が一様に形成できなかったり、レジストマークの崩れに
より精度よく評価できないという間層があった。Furthermore, due to unevenness in resist coating, resist marks could not be formed uniformly, or the resist marks could not be accurately evaluated due to collapse of the resist marks.
（課題を解決するための手段）
この問題を解決するために本発明は、Ｘ線を透過する物
質からなるウェハ上に輝尽性蛍光体を一様に塗布した擬
似ウェハを用いて、前記擬似ウェハへ第１のＸ線マスク
上の読み取りマークパターンを転写し、次にこの転写部
分をレーザービームで走査し、同転写部分の前記輝尽性
蛍光体からの第１の発光を読み取り、再び、第２のＸ線
マスク上の読み取りマークパターンを転写し、ついで、
第２の発光読み取りを行い、前記第１．第２の発光読み
取りの発光強度の差から精度を評価するものである。(Means for Solving the Problem) In order to solve this problem, the present invention uses a pseudo wafer made of a substance that transmits X-rays and uniformly coated with a stimulable phosphor. Transferring the reading mark pattern on the first X-ray mask to the wafer, then scanning this transferred area with a laser beam, reading the first light emission from the stimulable phosphor in the transferred area, and again, Transfer the reading mark pattern on the second X-ray mask, and then
A second luminescence reading is performed, and the first. Accuracy is evaluated based on the difference in the light emission intensity of the second light emission reading.
（作 用）
本発明を用いることにより、レジストプロセスが不要と
なり、簡単に位置合わせ精度の評価が行えるようになる
。また、−度使用した位置合わせ用擬似ウェハ全面に可
視光を照射すれば、Ｘ線でマスクパターンを転写する前
の状態に戻すことが可能で、簡単に再使用できる。(Function) By using the present invention, a resist process becomes unnecessary, and alignment accuracy can be easily evaluated. Furthermore, by irradiating the entire surface of the used positioning pseudo wafer with visible light, it is possible to return it to the state before the mask pattern was transferred using X-rays, and it can be easily reused.
（実施例） 本発明の実施例について以下に詳細に説明する。(Example) Examples of the present invention will be described in detail below.
第１図は本発明にかかるＸ線露光用位置合わせ用擬似ウ
ェハの使用方法を示す過程類断面図であり、第１図を参
照してＸ線露光用位置合わせ用擬似ウェハについて説明
する。FIG. 1 is a process sectional view showing a method of using the pseudo wafer for positioning for X-ray exposure according to the present invention, and the pseudo wafer for positioning for X-ray exposure will be explained with reference to FIG.
第１図（ａ）に示すように、本発明のＸ線露光用位置合
わせ用擬似ウェハ１は、Ｘ線を透過する物質からなるウ
ェハ、例えば石英（Ｓｉｎ、）ガラスウェハ１．上に輝
尽性蛍光体く例えば、
ＢａＦＢｒ：Ｅｒ″＊）２を一様に塗布したものである
。As shown in FIG. 1(a), a pseudo wafer 1 for positioning for X-ray exposure according to the present invention is a wafer made of a material that transmits X-rays, such as a quartz (Sin) glass wafer 1. A stimulable phosphor, for example, BaFBr:Er''*)2, is uniformly applied thereon.
第１図（ｂ）に示すように、ウェハ１上へＸ線３を照射
することにより、前記蛍光体２中に準安定な色中心４が
生成する。この色中心４は可視光の照射により消滅する
が、同時に輝尽性蛍光を発光する。この発光スペクトル
は、３９０ｎｍ付近にピークをもち、発光強度は入射し
たＸ線の強度に比例している。したがって、読み取りの
励起光源にＨｅ−Ｎ６レーザー（波長６３３ｎｒＩＩ）
６を用い、Ｘ線の照射部を走査し、発光強度を光電子
増倍管により測定する。As shown in FIG. 1(b), by irradiating the wafer 1 with X-rays 3, a metastable color center 4 is generated in the phosphor 2. This color center 4 disappears upon irradiation with visible light, but at the same time emits stimulable fluorescence. This emission spectrum has a peak around 390 nm, and the emission intensity is proportional to the intensity of incident X-rays. Therefore, the excitation light source for reading is a He-N6 laser (wavelength 633nrII).
6, the X-ray irradiation area is scanned, and the emission intensity is measured using a photomultiplier tube.
第２図に輝尽性蛍光強度と入射Ｘ線量との関係を示す。FIG. 2 shows the relationship between the photostimulable fluorescence intensity and the incident X-ray dose.
同図かられかるように発光強度と入射Ｘ線量との間には
、比例関係がある。As can be seen from the figure, there is a proportional relationship between the emission intensity and the incident X-ray dose.
また、読み取り後、第１図（ｄ）に示すように、擬似ウ
ェハ全面に可視光７を照射すると色中心４が消滅し、Ｘ
線３を照射する前の状態、すなわち、第１図（ａ）の状
態へ再生することができる。After reading, as shown in FIG. 1(d), when visible light 7 is irradiated onto the entire surface of the pseudo wafer, the color center 4 disappears and the
It is possible to reproduce the state before irradiating the line 3, that is, the state shown in FIG. 1(a).
複数のマスクの位置合わせ方法の実施例を第３図に基づ
いて説明する。まず、第３図（ａ）に示すように、第１
図で説明した位置合わせ用擬似ウェハの輝尽性蛍光体２
に、基準となるアラインメントマーク９ａと第１の読み
取り評価用マーク１０ａの設けられた第１のＸ線マスク
ｌｌａを通してＸ線を照射する０次に、第３図（ｂ）に
示すように、この上から、第２のＸ＠マスクｌｌｂの第
２のアラインメントマーク９ｂを当て、Ｈｅ−Ｎｅレー
ザー６で走査する。この時の拡大図を第４図に示す。Ｈ
ｅ−Ｎｅ光を照射すると、第４図（ａ）に示すように、
第１のＸ線マスクｌｌａを用いて位置合わせ用擬似ウェ
ハの輝尽性蛍光体２上にＸ線を照射したＸ線照射部１２
と、Ｘ線マスクｌｌｂのアラインメントマーク９ｂの位
置がずれていれば、アラインメントマーク９ｂの一方の
端■、■では、位置合わせ用擬似ウェハからの発光５が
検出されない。An embodiment of a method for aligning a plurality of masks will be described based on FIG. 3. First, as shown in Figure 3(a), the first
Stimulable phosphor 2 of the pseudo wafer for positioning explained in the figure
Then, as shown in FIG. 3(b), X-rays are irradiated through a first X-ray mask lla provided with an alignment mark 9a serving as a reference and a first reading evaluation mark 10a. The second alignment mark 9b of the second X@mask llb is applied from above and scanned with the He-Ne laser 6. An enlarged view at this time is shown in FIG. H
When e-Ne light is irradiated, as shown in FIG. 4(a),
X-ray irradiation unit 12 that irradiates X-rays onto the stimulable phosphor 2 of the alignment pseudo wafer using the first X-ray mask lla
If the position of the alignment mark 9b of the X-ray mask llb is shifted, the light emission 5 from the alignment pseudo wafer will not be detected at one end (2), (2) of the alignment mark 9b.
しかし、第４図（ｂ）に示すように、アラインメントマ
ーク９ｂとＸ線照射部１２の位置が一致していれば、■
、■、■、■すべての部分で発光５が検出できる。However, as shown in FIG. 4(b), if the alignment mark 9b and the X-ray irradiation unit 12 are aligned,
, ■, ■, ■ Luminescence 5 can be detected in all parts.
以上のようにアラインメントを行った後、第３図（Ｃ）
のように、第２の読み取り評価用マーク１０ｂを通して
Ｘ線を位置合わせ用擬似ウェハの輝尽性蛍光体２へ照射
する。After performing the alignment as described above, Figure 3 (C)
As shown, X-rays are irradiated onto the stimulable phosphor 2 of the alignment pseudo wafer through the second reading evaluation mark 10b.
次に、位置合わせ用擬似ウェハ上の読み取り評価用Ｘ線
照射部１３を、Ｈｅ−Ｎｅレーザー６で走査し発光部分
の発光強度から（第５図のように）、第１、第２の読み
取りマーク転写部１３ａ、 １３ｂ間の距離Ｘ、および
Ｘ、を求め、（Ｘ、−Ｘ、）／２から位置合わせ精度を
求める。前記Ｘ線照射部１３の上面図と発光強度の測定
例を第５図に示す。図かられかるように、第２の読み取
りマーク転写部１３ｂからは、第１の読み取りマーク転
写部１３ａの２倍の発光強度が検出され、Ｈｅ−Ｎｅレ
ーザー走査距離と発光強度からＸ、、 Ｘ、が測定でき
る。Next, the reading evaluation X-ray irradiation unit 13 on the alignment pseudo wafer is scanned with the He-Ne laser 6, and the first and second readings are obtained from the light emission intensity of the light emitting part (as shown in FIG. 5). The distances X and X between the mark transfer parts 13a and 13b are determined, and the alignment accuracy is determined from (X, -X,)/2. FIG. 5 shows a top view of the X-ray irradiation section 13 and a measurement example of the emission intensity. As can be seen from the figure, from the second reading mark transfer part 13b, twice the emission intensity is detected as from the first reading mark transfer part 13a, and from the He-Ne laser scanning distance and the emission intensity, X, , X , can be measured.
第６図はマスク３枚の位置合わせの場合の測定方法の例
を示すもので、ｘ、、 ｘ、、 ｘ、、 ｘ、から精度
を測定するものであり、第７図は、マスクの正確度を測
定した例を示したもので、複数のマスクの位置合わせの
場合、各マスクの位置ずれの状況が正確にわかることを
示している。Figure 6 shows an example of the measurement method when aligning three masks, and the accuracy is measured from x,, x, , x, , x, and Figure 7 shows the accuracy of the masks. This shows an example of measuring the degree of deviation, and shows that when aligning multiple masks, the situation of misalignment of each mask can be accurately determined.
（発明の効果）
以上詳述したように、本発明を用いることにより、レジ
ストプロセスを用いることなく、簡単に合わせ精度、マ
スク間重ね合わせ精度およびマスクの安定性評価を行う
ことができる。また、評価後、擬似ウェハ全面に可視光
を照射するだけで、擬似ウェハは評価前の初期状態に戻
るので何回でも繰り返して、使用することが可能である
。(Effects of the Invention) As described in detail above, by using the present invention, it is possible to easily evaluate alignment accuracy, mask-to-mask overlay accuracy, and mask stability without using a resist process. Further, after evaluation, simply by irradiating the entire surface of the pseudo wafer with visible light, the pseudo wafer returns to its initial state before evaluation, so it can be used any number of times.
第１図は本発明にかかるＸ線露光用位置合わせ用ウェハ
を示す断面図、第２図は輝尽性蛍光積度と入射Ｘ線量と
の関係を表わす図、第３図は位置合わせ方法の実施例を
説明するための断面図、第４図は位置合わせ方法を説明
するための拡大図、第５図は実際に位置合わせ精度を発
光強度から測定した例を示す図、第６図はマスク間重ね
合わせ精度測定例を示す図、第７図はマスクの正確度を
測定した例を示す図、第８図は従来のマスクの位置合わ
せ方法の一例を示す図である。
１、・・・石英ガラスウェハ、 ｌ ・・・擬似ウェハ
、 ２・・・輝尽性蛍光体、 ３−・・Ｘ線、 ４ ・
・・色中心、 ５ ・・・発光、 ６・・・Ｈｅ−Ｎｅ
レーザー ７ ・・・可視光、９ａ、９ｂ・・・アラ
インメントマーク、１０ａ・・・第１の読み取り評価用
マーク、１０ｂ・・・第２の読み取り評価用マーク、１
１ａ、 ｌｌｂ・・・Ｘ線マスク、 １２・・・ Ｘ線
照射部、１３・・・読み取り評価用Ｘ線照射部、１３ａ
・・・第１の読み取りマーク転写部、１３ｂ・・・第２
の読み取りマーク転写部、１３ｃ・・・第３の読み取り
マーク転写部、１３ａ’ ・・・Ｘ線照射後の第１の読
み取りマーク転写部。
特許出願人 松下電子工業株式会社
代 理 人 星 野 恒 司、゛２
第１図
第３図
第２図
ＡＩｔ Ｘ 裸／ （０１ｍｒｎ’ ）第５図
第７図
第６図
距離Ｘ（、ｕｍ）
第８図FIG. 1 is a cross-sectional view showing the alignment wafer for X-ray exposure according to the present invention, FIG. 2 is a diagram showing the relationship between the photostimulable fluorescence product and the incident X-ray dose, and FIG. 3 is a diagram showing the alignment method. 4 is an enlarged view to explain the alignment method, FIG. 5 is a diagram showing an example of actually measuring alignment accuracy from light emission intensity, and FIG. 6 is a mask FIG. 7 is a diagram showing an example of measuring mask accuracy; FIG. 8 is a diagram showing an example of a conventional mask alignment method. 1.... Quartz glass wafer, l... Pseudo wafer, 2... Stimulable phosphor, 3-... X-ray, 4.
...Color center, 5...Light emission, 6...He-Ne
Laser 7... visible light, 9a, 9b... alignment mark, 10a... first reading evaluation mark, 10b... second reading evaluation mark, 1
1a, llb... X-ray mask, 12... X-ray irradiation section, 13... X-ray irradiation section for reading evaluation, 13a
...first reading mark transfer section, 13b...second
reading mark transfer part, 13c... third reading mark transfer part, 13a'... first reading mark transfer part after X-ray irradiation. Patent applicant: Matsushita Electronics Co., Ltd. Representative: Koji Hoshino, ゛2 Figure 1 Figure 3 Figure 2 AIt X Bare/ (01mrn') Figure 5 Figure 7 Figure 6 Distance Figure 8
Claims (5)
光体が塗布された擬似ウェハ上に、アラインメントマー
クおよび読み取り評価用マークパターンを備えたＸ線マ
スクを通してＸ線を照射する工程と、Ｘ線で照射された
擬似ウェハ上のＸ線照射部をレーザビームで走査してＸ
線照射の発光を読み取ることを特徴とするマスク位置合
わせ検査方法。(1) A step of irradiating X-rays onto a pseudo wafer made of a material that transmits X-rays and coated with a stimulable phosphor through an X-ray mask equipped with alignment marks and a mark pattern for reading and evaluation. , the X-ray irradiation area on the pseudo wafer that has been irradiated with X-rays is scanned with a laser beam.
A mask alignment inspection method characterized by reading light emitted from radiation.
スクの位置ずれの程度を判断することを特徴とする請求
項（１）記載のマスク位置合わせ検査方法。(2) The mask alignment inspection method according to claim (1), wherein the degree of misalignment of the mask is determined based on the difference in the amount of light emitted at both end edges of the X-ray irradiation section.
光体を塗布したことを特徴とする擬似ウェハ。(3) A pseudo wafer characterized by coating a stimulable phosphor on a wafer made of a substance that transmits X-rays.
晶であることを特徴とする請求項（３）記載の擬似ウェ
ハ。(4) The pseudo wafer according to claim (3), wherein the stimulable phosphor is a microcrystal of BaFBr:Er^2^+.
徴とする請求項（３）記載の擬似ウェハ。(5) The pseudo wafer according to claim (3), wherein the substance that transmits X-rays is SiO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18045890A JP2704454B2 (en) | 1990-07-10 | 1990-07-10 | Mask alignment inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18045890A JP2704454B2 (en) | 1990-07-10 | 1990-07-10 | Mask alignment inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0468518A true JPH0468518A (en) | 1992-03-04 |
| JP2704454B2 JP2704454B2 (en) | 1998-01-26 |
Family
ID=16083579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18045890A Expired - Fee Related JP2704454B2 (en) | 1990-07-10 | 1990-07-10 | Mask alignment inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2704454B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001024264A1 (en) * | 1999-09-29 | 2001-04-05 | Infineon Technologies North America Corp. | Wafer alignment marks and manufacturing methods |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5512144A (en) * | 1978-07-12 | 1980-01-28 | Fuji Photo Film Co Ltd | Conversion of radiation image |
-
1990
- 1990-07-10 JP JP18045890A patent/JP2704454B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5512144A (en) * | 1978-07-12 | 1980-01-28 | Fuji Photo Film Co Ltd | Conversion of radiation image |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001024264A1 (en) * | 1999-09-29 | 2001-04-05 | Infineon Technologies North America Corp. | Wafer alignment marks and manufacturing methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2704454B2 (en) | 1998-01-26 |
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