JPH0467627A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH0467627A JPH0467627A JP18101690A JP18101690A JPH0467627A JP H0467627 A JPH0467627 A JP H0467627A JP 18101690 A JP18101690 A JP 18101690A JP 18101690 A JP18101690 A JP 18101690A JP H0467627 A JPH0467627 A JP H0467627A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- furnace tube
- frequency electrodes
- furnace core
- refrigerator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 229910000953 kanthal Inorganic materials 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体製造装置に関し、特に半導体基板を高周
波電極を有したボートに立てて炉芯管内に設置し、ポン
プにより減圧後ガスを導入し、高周波電力を印加するこ
とにより放電を生じさせ、半導体基板表面に絶縁膜を形
成する半導体製造装置に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and in particular, a semiconductor substrate is placed on a boat with a high-frequency electrode and installed in a furnace core tube, and gas is introduced after the pressure is reduced by a pump. , relates to a semiconductor manufacturing apparatus that generates discharge by applying high frequency power to form an insulating film on the surface of a semiconductor substrate.
従来の半導体製造装置、例えばプラズマＣＶＤ装置等に
おいては、第２図の縦断面図に示すように半導体基板３
を高周波電極１を有したボート２に立て、フロントハツ
チ１１およびリアハツチ１２を有する炉芯管５内に設置
し、ポンプ７により減圧後ガス導入管８よりガスを導入
し、高周波電源９より高周波電力を印加することにより
放電を生じさせ、半導体基板３の表面に絶縁膜を形成′
していた。この際、炉芯管外側に設けたヒーター６によ
り炉芯管５内の半導体基板３を加熱するようになってい
た。In a conventional semiconductor manufacturing apparatus, such as a plasma CVD apparatus, a semiconductor substrate 3 is
is placed on a boat 2 having a high-frequency electrode 1, and installed in a furnace core tube 5 having a front hatch 11 and a rear hatch 12. After the pressure is reduced by a pump 7, gas is introduced from a gas introduction pipe 8, and high-frequency power is supplied from a high-frequency power source 9. By applying , a discharge is generated and an insulating film is formed on the surface of the semiconductor substrate 3'.
Was. At this time, the semiconductor substrate 3 inside the furnace core tube 5 was heated by a heater 6 provided outside the furnace core tube.
上述した従来の半導体製造装置の加熱構造では、炉芯管
内壁に絶縁膜が形成されてしまうため、定期的な炉芯管
交換及び洗浄が必要であり、又、処理中に炉芯管内壁に
形成された絶縁膜が剥れ落ちて半導体基板表面に付着し
、半導体装置の品質歩留りの低下をもたらしていた。In the heating structure of the conventional semiconductor manufacturing equipment described above, an insulating film is formed on the inner wall of the furnace core tube, which requires periodic replacement and cleaning of the furnace core tube. The formed insulating film peels off and adheres to the surface of the semiconductor substrate, resulting in a reduction in the quality yield of semiconductor devices.
上述した従来の半導体製造装置の加熱構造に対し、本発
明は高周波電極内にヒーターを埋設し、炉芯管外側に冷
却器を設けたという相違点を有する。The present invention differs from the heating structure of the conventional semiconductor manufacturing equipment described above in that a heater is embedded within the high frequency electrode and a cooler is provided outside the furnace core tube.
本発明は半導体基板を立てる高周波電極を多数有したボ
ートの高周波電極内にヒーターを埋設し、かつ炉芯管外
側に冷却器を設けて炉芯管外壁を冷却することにより、
炉芯管内壁に絶縁膜を形成させない機構を有している。The present invention embeds a heater in the high-frequency electrodes of a boat that has a large number of high-frequency electrodes for supporting semiconductor substrates, and also provides a cooler outside the furnace core tube to cool the outer wall of the furnace core tube.
It has a mechanism that prevents the formation of an insulating film on the inner wall of the furnace core tube.
次に本発明を図面を参照して説明する。第１図は本発明
の一実施例の縦断面図である。高周波電極１を多数有し
たボート２ａに半導体基板３を立て、冷却器４により冷
却された炉芯管５内にボート２ａを設置後、ヒーター電
源１０によるヒーター ６ ａの加熱開始とともに炉芯
管５内をポンプ７により減圧し、反応ガスをガス導入管
８により導入後、高周波電源９により高周波電極１に高
周波電力を印加して放電させる構造となっている。高周
波電極１とボート２ａとは、カーボン製で一体成形され
ており、カーボン内部にカンタル線のヒーター６ａが埋
設されている。冷却器４は水冷式の冷却器である。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. A semiconductor substrate 3 is placed on a boat 2a having a large number of high-frequency electrodes 1, and after installing the boat 2a in a furnace core tube 5 cooled by a cooler 4, the furnace core tube 5 is heated as the heater power source 10 starts heating the heater 6a. The interior is depressurized by a pump 7, a reaction gas is introduced through a gas introduction pipe 8, and then a high frequency power source 9 applies high frequency power to the high frequency electrode 1 to cause discharge. The high frequency electrode 1 and the boat 2a are made of carbon and are integrally molded, and a Kanthal wire heater 6a is embedded inside the carbon. The cooler 4 is a water-cooled cooler.
以上のように、高周波電極１内に埋設されたヒーター６
ａにより半導体基板３が加熱され、かつ炉芯管５が冷却
器４により冷却されている為、炉芯管５の内壁に絶縁膜
が形成されない。As described above, the heater 6 embedded in the high frequency electrode 1
Since the semiconductor substrate 3 is heated by a and the furnace core tube 5 is cooled by the cooler 4, no insulating film is formed on the inner wall of the furnace core tube 5.
以上説明したように本発明によれば、高周波電極内にヒ
ーターを埋設して半導体基板を加熱し、かつ炉芯管の外
側に冷却器を設置して炉芯管の冷却を行うことにより、
炉芯管内壁に絶縁膜が形成されなくなって炉芯管交換及
び洗浄の必要がなくなり、又、半導体基板表面へ絶縁膜
が剥れて付着することも無く、半導体装置の品質歩留り
向上にも貢献できるという効果がある。As explained above, according to the present invention, a heater is embedded in the high-frequency electrode to heat the semiconductor substrate, and a cooler is installed outside the furnace core tube to cool the furnace core tube.
Since no insulating film is formed on the inner wall of the furnace core tube, there is no need to replace or clean the furnace core tube, and the insulation film does not peel off and adhere to the semiconductor substrate surface, contributing to improving the quality yield of semiconductor devices. There is an effect that it can be done.
第１図は本発明の一実施例の縦断面図、第２図は従来装
置を示す縦断面図である。
１・・・高周波電極、２，２ａ・・・ボート、３・・・
半導体基板、４・・・冷却器、５・・・炉芯管、６，６
ａ・・・ヒーター、７・・・ポンプ、８・・・ガス導入
管、９・・・高周波電源、１０・・・ヒーター電源、１
１・・・フロントハツチ、１２・・・リアハツチ。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of a conventional device. 1... High frequency electrode, 2, 2a... Boat, 3...
Semiconductor substrate, 4... Cooler, 5... Furnace core tube, 6, 6
a...Heater, 7...Pump, 8...Gas introduction pipe, 9...High frequency power supply, 10...Heater power supply, 1
1...Front hatch, 12...Rear hatch.
Claims (1)
炉芯管内に設置し、ポンプにより減圧後ガスを導入し、
高周波電力を印加することにより放電を生じさせ、半導
体基板表面に絶縁膜を形成する半導体製造装置において
、前記高周波電極内に半導体基板を加熱するヒーターが
埋設され、更に炉芯管の外側に炉芯管の冷却を行なう冷
却器が設置されていることを特徴とする半導体製造装置
。A semiconductor substrate is placed on a boat with a large number of high-frequency electrodes, placed inside the furnace core tube, and after the pressure is reduced by a pump, gas is introduced.
In semiconductor manufacturing equipment that generates electrical discharge by applying high-frequency power to form an insulating film on the surface of a semiconductor substrate, a heater that heats the semiconductor substrate is embedded in the high-frequency electrode, and a furnace core is located outside the furnace core tube. A semiconductor manufacturing device characterized by being equipped with a cooler for cooling tubes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18101690A JPH0467627A (en) | 1990-07-09 | 1990-07-09 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18101690A JPH0467627A (en) | 1990-07-09 | 1990-07-09 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0467627A true JPH0467627A (en) | 1992-03-03 |
Family
ID=16093281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18101690A Pending JPH0467627A (en) | 1990-07-09 | 1990-07-09 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0467627A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478006A (en) * | 1993-05-24 | 1995-12-26 | Sharp Kabushiki Kaisha | Printed-circuit substrate and its connecting method |
-
1990
- 1990-07-09 JP JP18101690A patent/JPH0467627A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478006A (en) * | 1993-05-24 | 1995-12-26 | Sharp Kabushiki Kaisha | Printed-circuit substrate and its connecting method |
| US6211469B1 (en) | 1993-05-24 | 2001-04-03 | Sharp Kabushiki Kaisha | Printed circuit substrate with comb-type electrodes capable of improving the reliability of the electrode connections |
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