JPH0461337A - Manufacture of tantalum oxide film - Google Patents
Manufacture of tantalum oxide filmInfo
- Publication number
- JPH0461337A JPH0461337A JP17345990A JP17345990A JPH0461337A JP H0461337 A JPH0461337 A JP H0461337A JP 17345990 A JP17345990 A JP 17345990A JP 17345990 A JP17345990 A JP 17345990A JP H0461337 A JPH0461337 A JP H0461337A
- Authority
- JP
- Japan
- Prior art keywords
- tantalum oxide
- film
- oxygen
- sputtering
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910001936 tantalum oxide Inorganic materials 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 abstract description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 10
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 10
- 239000003990 capacitor Substances 0.000 abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明（よ エレクトロニクス用素子に応用される高誘
電率材料である酸化タンタル薄膜の製造方法に関すム
従来の技術
ＤＲＡＭ等のＶＬＳＩの集積度の増大にともな（＼ 容
量（キャパシタ）部の占有する面積は無視できなくなっ
てきていも その占有面積の低減化のた数 単位面積当
りの静電容量が高く、すなわち比誘電率が高く、しかも
リーク電流が小さく、絶縁耐圧の高い薄膜材料の必要性
が高まっていも酸化タンタル（Ｔａ２０ｓ）は約２５と
高い比誘電率を有し 比誘電率が約４の酸化シリコン（
ＳｉＯ２）や同じく約７の窒化シリコン（Ｓｉ３ｔＪ４
）にかわるキャパシタ絶縁膜材料として最近注目されて
いも酸化タンタルの薄膜形成方法としては スパッタリ
ング法等で形成したタンクル（Ｔａ）膜を高温の酸素雰
囲気下で熱酸化する方法や同様のＴａ膜を電気化学的に
陽極酸化する方法があり、また直接酸化タンタル薄膜を
形成する方法として、ターゲットに金属ＴａまたはＴａ
２０５の焼結体を用いたスパッタリングＬ Ｔａ（Ｏ
Ｃ２Ｈｓ ） ｓ等を原料ガスに用いた減圧ＣＶＤ法等
があム
発明が解決しようとする課題
このような従来の酸化タンタル薄膜の製造方法で（よ
スパッタリング法等で形成するＴａ膜は通常多結晶膜で
これを熱酸化して形成した酸化タンタル膜は凹凸の多い
非晶質膜力＼ 粒界の存在する多結晶膜となム このた
敢 絶縁耐圧が低く、リーク電流が大きしも
陽極酸化による方法では 電解液中の負イオンなどの不
純物の膜中への混入が避けられず、 リーク電流が太き
（−また不均一な膜形成となる。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing tantalum oxide thin film, which is a high dielectric constant material applied to electronic devices.Conventional technologyIncrease in the degree of integration of VLSI such as DRAM As a result, the area occupied by the capacitor has become impossible to ignore, but the number of ways to reduce the area occupied by the capacitor is that it has a high capacitance per unit area, that is, a high dielectric constant, and a leakage current. Although the need for thin film materials with small dielectric constant and high dielectric strength is increasing, tantalum oxide (Ta20s) has a high dielectric constant of about 25, and silicon oxide (with a dielectric constant of about 4) is growing.
SiO2) and silicon nitride (Si3tJ4
Although tantalum oxide has recently been attracting attention as an alternative capacitor insulating film material, there are two methods for forming tantalum oxide thin films: thermally oxidizing a tantalum (Ta) film formed by sputtering in a high-temperature oxygen atmosphere, and electrically oxidizing a similar Ta film. There is a method of chemical anodic oxidation, and a method of directly forming tantalum oxide thin film using metal Ta or Ta as a target.
Sputtering L Ta(O
The problem that the invention aims to solve is the low-pressure CVD method using C2Hs) s etc. as a raw material gas.
The Ta film formed by sputtering method is usually a polycrystalline film, and the tantalum oxide film formed by thermal oxidation is an amorphous film with many irregularities. Although the withstand voltage is low and the leakage current is large, the method using anodic oxidation cannot avoid the incorporation of impurities such as negative ions in the electrolyte into the film, resulting in a large leakage current (and non-uniform film formation). .
減圧ＣＶＤ法においては 段差被覆性（ステップカバレ
ジ）がよく、高集積化が進むＶＬＳＩへの適用には魅力
的な方法である力（原料ガスがＣ（炭素）を含んだ有機
物であるたム 形成膜中に不純物として混入し それが
原因で一般に絶縁耐圧は低しも
一人 スパッタリング法により直接形成されるＴａａＯ
ｓ膜は緻密で絶縁耐圧が高い等の優れた特性を有するも
のへ 通常ＩＰａ以下のガス圧領域で膜形成が行われる
た取 ステップカバレジの良好性に欠けていた
本発明は上記課題を解決するものでステップカバレジが
良好で、緻密で、比誘電率が高く、リーク電流が低く、
絶縁耐圧の高い酸化タンタル薄膜を提供することを目的
としている。The low-pressure CVD method has good step coverage and is an attractive method for application to VLSI, which is becoming increasingly highly integrated. TaaO is mixed into the film as an impurity, and as a result, the dielectric strength is generally low. TaaO is formed directly by sputtering.
S films have excellent properties such as being dense and having a high dielectric strength.The present invention solves the above problems, where film formation is usually performed in a gas pressure region of IPa or less, which lacks good step coverage. It has good step coverage, is dense, has a high dielectric constant, and has low leakage current.
The aim is to provide a tantalum oxide thin film with high dielectric strength.
課題を解決するための手段
本発明は上記目的を達成するために スパッタリング法
により酸化タンタル薄膜を形成するに際し 真空度が１
０Ｐａ以上８０Ｐａ以下の圧力の酸素雰囲気中または酸
素および希ガスの混合ガス雰囲気中にて膜形成するもの
である。Means for Solving the Problems In order to achieve the above object, the present invention provides a method for forming a tantalum oxide thin film by a sputtering method when the degree of vacuum is 1.
The film is formed in an oxygen atmosphere at a pressure of 0 Pa or more and 80 Pa or less, or in a mixed gas atmosphere of oxygen and a rare gas.
作用
本発明は上記した構成により、スパッタリングガスとし
て酸素または酸素と希ガスの混合ガスを用し＼ 真空度
１０Ｐａ以上８０Ｐａ以下という低真空領域にてスパッ
タリング蒸着を行うので、蒸発分子の平均自由行程が小
さくなり、その結果膜の成長速度は遅くなるものへ ス
テップカバレジと緻密性が向上する。Effect The present invention uses oxygen or a mixed gas of oxygen and a rare gas as the sputtering gas and performs sputtering deposition in a low vacuum region of 10 Pa or more and 80 Pa or less, so that the mean free path of the evaporated molecules is As a result, the growth rate of the film becomes slower. Step coverage and density are improved.
実施例
以下、本発明の第１の実施例について第１図、第２図お
よび第３図を用いて説明すも
第１図は本発明の酸化タンタル薄膜の製造に用いたスパ
ッタリング装置の概略断面図であ４Ｓｉ単結晶（１００
）面を基体（１）として用（＼ 高周波マグネトロンス
パッタリング法により、ターゲット （２）として、６
″φＸ ５ｍｍｔ純度９９．９９％の金属Ｔａを用し＼
酸素ガス雰囲気でスパッタリング蒸着して、上記基体
（１）上に膜厚５０ｎｍのＴａ２０６被膜を付着させ九
ここで（３）はシャツ久（４）はスパッタリングガス
導入ｎ （５）は真空Ｆ （６）は基体電機 （７
）はターゲット電機 （８）は絶縁体であム
この場合、酸素ガス圧力は２０Ｐａ、 高周波電力３
００Ｗ、スパッタリング時間１．５時肌 基体温度２５
０℃であっ九 この時へ 酸化タンタル被膜の電気特性
（よ 比誘電率が２１で、電界強度ＩＭ ｖ／ｃｒｎ”
印加時のリーク電流は２．２ Ｘ １０−’Ａ／Ｃｍ”
と実用に供するものであった
第２図に酸素ガス圧力を変化させた場合の酸化タンタル
膜の成長速度の変化の様子を示す。酸素ガス圧力が大き
くなるほど膜の成長速度は遅くなも
第３図に酸素ガス圧２０Ｐａ、 高周波電力３００Ｗ
の時の基体（１）の温度を変化させた場合の膜厚５０ｎ
ｍのＴａ２’ｓ Ｍの比誘電率の変化の様子を示す。EXAMPLE Hereinafter, a first example of the present invention will be explained using FIG. 1, FIG. 2, and FIG. The figure shows 4Si single crystal (100
) surface as the base (1) (＼ By high frequency magnetron sputtering method, 6 as the target (2)
″φX 5mmt using Ta metal with purity of 99.99%＼
A Ta206 film with a thickness of 50 nm is deposited on the substrate (1) by sputtering deposition in an oxygen gas atmosphere.9 Here, (3) is a vacuum (4) is a sputtering gas introduced (5) is a vacuum F (6 ) is the base electric machine (7
) is the target electric machine (8) is the insulator. In this case, the oxygen gas pressure is 20 Pa, and the high frequency power is 3
00W, sputtering time 1.5 hours Skin substrate temperature 25
At 0°C, the electrical properties of tantalum oxide film (relative permittivity is 21, electric field strength IM v/crn)
Leakage current when applied is 2.2 x 10-'A/Cm"
FIG. 2, which was used for practical purposes, shows how the growth rate of the tantalum oxide film changes when the oxygen gas pressure is changed. The growth rate of the film slows down as the oxygen gas pressure increases.
Film thickness 50n when changing the temperature of the substrate (1) at
Figure 3 shows the change in relative dielectric constant of Ta2's M.
次に 第２の実施例について同じく第１図と第４図およ
び第５図を用いて説明する。Next, a second embodiment will be explained using FIGS. 1, 4, and 5.
Ｓｉ単結晶（１０’０）面を基体（１）として用し＼
高周波マグネトロンスパッタリング法により、ターゲッ
ト （２）として、 ６”φＸ ５ｍｍｔ純度９９．９
９％の金属Ｔａを用しく 酸素およびアルゴン等の希ガ
スの混合ガス例えば０２：Ａｒ＝１： ６の混合ガス
雰囲気中でスパッタリング蒸着して、上記基体（１）上
に膜厚５０ｎｍのＴａ２０６被膜を付着させ九この場合
、混合ガス圧力は２０Ｐａ、 高周波電力３００ Ｗ
、 スパッタリング時間４０分、基体（１）の温度２
００℃であっ九 この時へ 酸化タンタル被膜の比誘電
率は２０で、電界強度Ｉ Ｍ Ｖ ／ｃｒｎ２印加時の
リーク電流は３ 、５ Ｘ １０−”Ａ／ｃｍ”と実用
に供するものであっに
第８４図に０２：Ａｒ＝１： ６の場合の混合ガス圧
力を変化させた場合の酸化タンタル膜の成長速度の変化
の様子を示す。第２図と同様の変化の傾向を示す力（酸
素ガスのみの場合と違℃＼ ガス圧領域全般にわたり、
膜成長速度の上昇がみられる。Using the Si single crystal (10'0) plane as the substrate (1)\
By high frequency magnetron sputtering method, the target (2) is 6”φX 5mmt purity 99.9
A Ta206 film with a thickness of 50 nm is formed on the substrate (1) by sputtering and depositing 9% metallic Ta in a mixed gas atmosphere of oxygen and a rare gas such as argon, for example, 02:Ar=1:6. In this case, the mixed gas pressure is 20 Pa, and the high frequency power is 300 W.
, sputtering time 40 minutes, temperature of substrate (1) 2
At 00°C, the dielectric constant of the tantalum oxide film is 20, and the leakage current when applying an electric field strength of I M V /crn2 is 3.5 x 10-"A/cm", which is suitable for practical use. FIG. 84 shows how the growth rate of the tantalum oxide film changes when the mixed gas pressure is changed in the case of 02:Ar=1:6. The force shows the same tendency of change as shown in Figure 2 (different from the case of oxygen gas only)
An increase in film growth rate is observed.
第５図（よ ０２：Ａｒ＝１＋ ６の混合ガス圧２０
Ｐａ、 高周波電力３００Ｗの時の基体（１）の温度
を変化させた場合の膜厚５０ｎｍのＴａ２０５膜の比誘
電率の変化の様子を示したものである。酸素ガスのみの
場合の第３図と同様の傾向がみられ九第１、第２の実施
例ともにスパッタリングガス圧力の上昇にともなし＼
ステップカバレジは良くなるものへ 膜成長速度が低下
し さらには１００Ｐａ以上の真空領域においては放電
しにくい状況となるた敢 １０〜８０Ｐａの真空領域で
の膜形成が有効であることを本発明者らは確認し通発明
の効果
以上の実施例から明らかなように本発明によれば 真空
度が１０Ｐａ以上８０Ｐａ以下の圧力の酸素雰囲気中ま
たは酸素および希ガスの混合ガス雰囲気中で膜形成する
のて ステップカバレジが良好で、緻密で、比誘電率が
高く、リーク電流が低く、絶縁耐圧が高くて、キャパシ
タ部の小型化が可能で、ＶＬＳＩ等の集積度の向上に寄
与する酸化タンタル薄膜を提供できる。Figure 5 (Y02: Ar=1+6 mixed gas pressure 20
This figure shows how the dielectric constant of a Ta205 film with a thickness of 50 nm changes when the temperature of the substrate (1) is changed when the high-frequency power is 300 W. A similar trend to that shown in Fig. 3 in the case of oxygen gas only was observed, and in both the first and second examples, as the sputtering gas pressure increased\
The step coverage will be improved.The film growth rate will decrease and furthermore, in the vacuum region of 100 Pa or more, it will be difficult to discharge. As is clear from the above examples, according to the present invention, it is possible to form a film in an oxygen atmosphere with a degree of vacuum of 10 Pa or more and 80 Pa or less, or in a mixed gas atmosphere of oxygen and a rare gas. Provides a tantalum oxide thin film that has good step coverage, is dense, has a high dielectric constant, low leakage current, high dielectric strength, allows for miniaturization of the capacitor part, and contributes to improving the degree of integration of VLSI etc. can.
第１図は本発明の一実施例の酸化タンタル薄膜の製造方
法を実施するために使用するスパッタリング装置の概略
断面医 第２図は本発明の酸化タンタル薄膜の製造方法
における酸素ガス圧と膜成長速度の関係を示す＠ 第３
図は同酸化タンタル薄膜の製造方法において酸素ガスを
用いた場合の基体温度と比誘電率の関係を示す医 第４
図は本発明の他の酸化タンタル薄膜の製造方法における
酸素とアルゴンの混合ガス圧と膜成長速度の関係を示す
皿 第５図は同酸化タンタル薄膜の製造方法において酸
素とアルゴンの混合ガスを用いた場合の基体温度々比誘
電率の関係を示す図である。
１・・・基体 ２・・・ターゲット、 ４・・・スパッ
タリングガス導入は ５・・・真空権 ６・・・基体電
機７・・・ターゲット電極
第
図
１艮 ４１５、
ターゲット
スハーノタリン７ｔス樽入口
ｌ γ摺
基 イネ ｔ ｖＬ
ターゲット電極
第２図
第 ３ 図
＃ ｄｏ ｇＯｉ！２隼力゛
ス圧［Ａ］
基 体 を攬 ［ｔコFIG. 1 is a schematic cross-sectional diagram of a sputtering apparatus used to carry out the method for producing a tantalum oxide thin film according to an embodiment of the present invention. FIG. 2 is a diagram showing oxygen gas pressure and film growth in the method for producing a tantalum oxide thin film according to the present invention. Showing the relationship of speed @ 3rd
The figure shows the relationship between the substrate temperature and relative dielectric constant when oxygen gas is used in the method for manufacturing the tantalum oxide thin film.
Figure 5 shows the relationship between the pressure of a mixed gas of oxygen and argon and the film growth rate in another method of manufacturing a tantalum oxide thin film according to the present invention. FIG. 3 is a diagram showing the relationship between substrate temperature and relative permittivity when the substrate temperature is high. 1...Substrate 2...Target 4...Sputtering gas introduction 5...Vacuum power 6...Base electric machine 7...Target electrode Figure 1 415, Target Suhanotarin 7t barrel Inlet l γ slide base Rice t vL Target electrode Figure 2 Figure 3 # do gOi! 2. Force pressure [A] Pick up the base [t
Claims (2)
するに際し、真空度が１０Ｐａ以上８０Ｐａ以下の圧力
の酸素雰囲気中にて膜形成することを特徴とする酸化タ
ンタル薄膜の製造方法。(1) A method for producing a tantalum oxide thin film, which comprises forming the tantalum oxide thin film by sputtering in an oxygen atmosphere with a degree of vacuum of 10 Pa or more and 80 Pa or less.
するに際し、真空度が１０Ｐａ以上８０Ｐａ以下の圧力
の酸素および希ガスの混合ガス雰囲気中にて膜形成する
ことを特徴とする酸化タンタル薄膜の製造方法。(2) A method for producing a tantalum oxide thin film, which comprises forming the tantalum oxide thin film by a sputtering method in an atmosphere of a mixed gas of oxygen and rare gas at a vacuum degree of 10 Pa or more and 80 Pa or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17345990A JPH0461337A (en) | 1990-06-29 | 1990-06-29 | Manufacture of tantalum oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17345990A JPH0461337A (en) | 1990-06-29 | 1990-06-29 | Manufacture of tantalum oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0461337A true JPH0461337A (en) | 1992-02-27 |
Family
ID=15960868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17345990A Pending JPH0461337A (en) | 1990-06-29 | 1990-06-29 | Manufacture of tantalum oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0461337A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144057A (en) * | 1990-07-24 | 2000-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including a field effect transistor |
| US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
-
1990
- 1990-06-29 JP JP17345990A patent/JPH0461337A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144057A (en) * | 1990-07-24 | 2000-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including a field effect transistor |
| US7335570B1 (en) | 1990-07-24 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming insulating films, capacitances, and semiconductor devices |
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