JPH0461242A - Hardening furnace for semiconductor device formation - Google Patents

Abstract

PURPOSE:To eliminate dripping of synthetic resin solution in a short time and to harden the solution for preventing a crack or bubbles from being generated in the solution by a method wherein the synthetic resin solution applied on a chip is previously heated and heated up by a preheater through the lower surface of a film carrier, then, the solution is heated through both surfaces of the carrier. CONSTITUTION:A guide roller 2 is arranged in close proximity to the entrance part of a furnace main body 1, which has the entrance part 1a opened in its lower part and an exit part 1b opened in its upper part, and first to fourth contrarotating rollers 3 to 6 are arranged horizontally and rotatably in the main body 1, for instance, in such a way that the positions of the upper surface and lower surface of each roller become almost the same as the positions of the lower surface and upper surface of the following roller. Moreover, a preheater 7 is arranged in the vicinity or the entrance part 1a in the main body 1 in such a way as to oppose to the lower surface of a film carrier 50, first upper and lower heaters 10 and 8 and second upper and lower heaters 11 and 9, which oppose to each other holding the first-step film carrier 50 between them, are arranged, third upper and lower heaters 14 and 12 and fourth upper and lower heaters 15 and 13 are similarly arranged to the second-step carrier 50 and a fifth upper heater 16, a fifth lower heater 17 and a sixth upper heater 18 are ar ranged in order in opposition to the third-step to fifth-step carriers 50. In such a way, the preheater is installed and the heaters for heating the upper and lower surfaces of at least the first-step carrier are installed. Thereby, the hardened state of a resin solution is improved.

Description

[Detailed Description of the Invention] (Industrial Application Field) In recent years, semiconductor devices have been widely used in electrical equipment, communication equipment, etc.
! A chip 51 such as an IC is bonded to the film carrier 50 on which perforations are formed, and a synthetic resin liquid is applied to the chip to form an inlet part 30a and an outlet part 1'' as shown in FIG. A roller 31 is installed at the inlet of a furnace body 30 having 3 Ob, and reversing rollers 32 to 35 are rotatably installed in the furnace body 30 in a horizontal state at a predetermined interval. The overhang is formed by curing the synthetic resin liquid by passing it through a curing furnace for forming semiconductor devices, which is composed of heaters 36 to 40 arranged opposite to the upper surface of the film carrier 50.

(Problems to be Solved by the Invention) The above-mentioned heater 36 to which the synthetic resin liquid applied to the chip portion is not disposed on the upper surface of the film carrier 50.

Heat by 40 and synthesize 1! In the method of curing the resin, 0.019 CC of synthetic resin resin (Chip Coat 1320-617, manufactured by Hokuriku Toyo Co., Ltd.) is applied to the film carrier 50, and Fill! ,・1 carrier 50 to 4], 8.1
0 perflation, "sec's movement speed collapses.
When driving, if the heater temperature is 50°C, it will be 4 perforation, and if the heater temperature is 80° (:
A sharpening effect occurred after 10 perforation seconds. For this reason, the synthetic resin liquid that can be used is limited, and the synthetic resin liquid that is applied must be heated rapidly to prevent the formation of bubbles, etc., and the curing time is This process takes a long time and takes a long time to form a semiconductor device, resulting in a problem of very low work efficiency.

Therefore, an attempt was made to install heaters facing the upper and lower surfaces of the film carrier 50, but there was almost no difference compared to the conventional case.

(Means for Solving the Problem) In order to solve the above-mentioned problems, the curing furnace for forming a live conductor device of the present invention rotates the roller in a horizontal state at a predetermined angle (1117) within the furnace main body. A pair of heaters are installed on one side of the film carrier σ) which runs while being guided by the rollers. - Arrange the 1. facing plate on the rear 10" side!
10).

In addition, the heater is fixed in the longitudinal direction and divided into multiple pieces, 1 piece, 1': 1 piece horizontally, and furthermore (, this, the heater, 61, the device is heated, and the far infrared rays are heated overnight.
"-Formation (, is, <action) in one and one night"7'
7) Heating from the bottom! - Warm the chips for 1 minute, then
Film carrier's 1. Heat the synthetic resin liquid from the top side and cure it in a short time without clutter, cracks, or bubbles. , (Example of Solid Line) The configuration of one embodiment of the forming furnace for forming an f-conductor device of the present invention will be described based on the drawings.

1 is above (13 in 11 part 1d goes out to earth part [1 part lb is open [-1 h f 2 in the furnace body 2 is in the furnace body 1a)]
3 is a kite roller which is installed in the furnace body 1 at a predetermined distance from the guide roller 2 so as to be freely rotatable in a horizontal position. 44 is a first reversing roller 17 whose lower surface position is at the same time as the position of the circumferential surface of the guide roller 2, which is connected to the furnace at a predetermined distance from the first reversing roller 3. A second reversing roller is rotatably installed above water in the main body 1, and the lower surface position of the circumferential surface of the roller is the first reversing roller.
The upper surface position of the circumferential surface of the reversing roller 3 and the time are -.

Reference numeral 5 designates a gear 3 reversing roller, and 6 represents a fourth reversing roller, which are rotatably installed horizontally with a predetermined distance from the second reversing roller 4 and the third reversing roller 5, respectively.

Then, the film carrier 50 to which the chip 51 has been bonded is sequentially passed over the first reversing roller 3 to the fourth reversing roller 6 and conveyed at a predetermined speed. At this time, the bonded chip 51 has an upper surface, a lower surface, an upper surface,
It becomes the state of the bottom surface and the top surface.

7 is a position close to the inlet portion 1a in the furnace body 1, and
A preheater 68 installed so as to face the lower surface of the film carrier 50 is connected to the preheater'/.
It was installed at t1/, -1st lower part and overnight, Ezuki↓The 1st P part heater 8 (this was installed in conjunction with a't', 2)
With the ζ part heater? ') 6 10 is one stage [first upper part installed to sandwich the film carrier 50 of J, and 11 is the 11th part]
Part 1 was installed overnight on October 10th, and part 7 of ``Part 2'' was installed overnight. 】2 is 2g January film carry? 5
A third lower heater is installed so as to face the fourth side of the heater 12, and a fourth lower heater 13 is connected to the third heater 12.

1 and 4 hold the second stage film carrier 1″50 X, ζ
The third heater is installed so as to face the first third heater 12.
It is the upper part and it is the third I. The fourth part 16 is connected to the third stage film carrier 50, and the fifth part 16 is the fifth part installed so as to face the upper surface of the third stage film carrier 50. , 17 is the 5th part of the film carrier 50 in the fourth stage which is crossed so as to face it.
18 is a +7 0th 7th section heater installed so as to face the upper surface of the film carrier 50 in the 5th stage.

- Each of the above items is 7~. 18 can be used with infrared heaters, resistance heating, etc., but far infrared heaters (wireless) can be used.
・It is most preferable to use synthetic resin (using a hardening furnace for D semiconductor devices) and apply it to the synthetic resin. When placing the support in the furnace t*i and heating and hardening it,
1. To prevent the applied synthetic resin finger liquid from dripping when it is reversed by the first reversal +7-ra'3. Is it necessary to keep it?

Then, the first and second T film carriers 50 (two-dimensional) and the first and second T film carriers 50 (two-dimensional) were installed.
Synthetic resin by heater 10.11)
Measure the cure state.

First, 1 coke 2~6 each, film 2~ - rear 50
At the same time, apply synthetic resin liquid (Hokuriku Paint Co., Ltd. Chin 7 Near-1-1320-61) to Yaria 50 to the film.
7) was applied at a rate of 0.01.9 CC, the resin was run at each preset speed, and the cured state of the synthetic resin d(lWl: d??
, No. 1, No foaming, Curing) were determined, and 1st Example 7-ta warm melon: 50.70' C2 11th part heater temperature: 580° (2, 1st part 7 part 1: rao, go'' (2, h-mentioned warm reaction Ql'fζnoilm: N generation, rear 0 movement speed, 1.6.8
．． 10.12.10 bar photo~;,・Yonto i
e As the (') type of C, l1iJ'! N missing, hui/
When I ran the L-mhair ring O, the quality of each one was ○° (in the case of a moth, it was 0 perf 1.-Shicon Se
(・In the case of sec, d(ta)11, and
No foaming occurred. Also, the overnight temperature of the yellowtail is ′,・′
At 0°C, the heater mixed coal in the 1st section and the ■ section is 80° (,
In the case of 12 barf skill,・”' s e
r: Now it becomes -j (αt6h becomes 4, 4 perforations, sec to 10 perforations,...
,/! In this example, the temperature was set to ``I' 0 '' overnight.
Cj' was set to 1 to avoid rapid heating. ': There are many things.

Second example Preheater temperature: U0゛(゛, 1st F section heater! Crystal melting temperature 50°C1 1st. l-, part heater temperature: 50'C.

Second lower heater temperature: 50.70. ．． 90'C1 20th part Heater warmer: 50.7o, 90'C1'' Under the temperature conditions described in 5, the moving speed of the film A carrier 50 was set to the same conditions as in the first embodiment. When I ran 50, part 20, part 2, the temperature overnight was 50'C.
In the case of 8 barf 4-shi-john//' S e t
It can be used up to 1 perf, but at 70°C, 10 perf, /"S e −
When foaming occurs at 53°C and the second upper and lower parts are heated overnight at 50"C1 and 70°C, 1.
Perforation, between ``'sec'' and 8 perforation reeds/sec, there will be no dripping, and
No foaming occurred.

3rd example preheater temperature near 0' (10th part heater temperature + 80'C1 1st part heater temperature: 80'C2 2nd part 1 part heater temperature, 80.100" (2, 120"
．． 140' C1 2nd tenth part Shiitan Shinryo: 80.100”C7120,1
・10'C,, - The moving speed of the film six-wheel rear 50 under the mixed coal conditions described in LL is 1.6.8. ．． 1('), 12.1G, 18 Barfushi L-Shicon sec. Run the film A Yaria 50, the second lower part, ``-7th part-''
In the case of warm mixed coal 80"C, 12 barf<p-John/"S e C", 100° (in the case of 2, 1
2 perf section ν-7 s e c ′? :, ``Create dripping =, If 12o°0, 8 barf oleecico>se C to generate foam [:,, 18 barf 41/-
John 2, created a sludge in 'sec. Furthermore, 140
゜(In the case of Mi, 8 perflation/” S e
Foaming occurred from C to I-.

Under the above temperature conditions, the second i part, lower heater wetland is 8
0'C, and ]00"C, 8 perflation/"" S e C to 10 perf.
When the temperature is 120"C, dripping and foaming occur between 10 barf./yon/sec and 16 barf. What is that?

From the hardening state of the synthetic resin liquid according to each of the above-mentioned embodiments, the synthetic resin becomes better when the reheater of the present invention is installed compared to when the conventional film carrier 50 is heated from the 7th surface or from the upper and lower surfaces. It can be seen that the curing state of the liquid improves, and that the curing state of the synthetic resin liquid becomes even better when a plurality of heaters are installed to heat the surface of the film carrier 50.

In the embodiment described in L, there are a plurality of inversion ports, and
A plurality of pairs of upper and lower heaters may be provided, but it is only necessary that at least the first stage upper and lower heaters be provided, and the settings must be set appropriately depending on the properties of the synthetic resin liquid and the amount of application.

In addition, rather than installing one long heater along the film carrier, it is better to divide the heater into multiple parts and adjust the temperature for each heater for better curing efficiency of the synthetic resin liquid2. (Effects of the Invention) In the curing furnace for forming semiconductor devices of the present invention, the 17-roller is installed in a predetermined position within the furnace main body in a horizontal state so that it can rotate freely, and the roller is guided by the roller 1). At least one pair of heaters are installed opposite to the lower surface of the film carrier to be used, and a repeater is arranged opposite to the lower surface of the film carrier. The temperature of the chip can be raised by heating from the F side of the film carrier in advance using a preheater, and then the entire synthetic resin liquid can be heated by heating from the bottom side of the film carrier. It can be prevented from dripping in a short time, and since the skin is formed after the solvent has evaporated, it can be cured without creating cracks or bubbles. For these reasons, the overall takt time can be shortened and work efficiency can be improved.

Further, if the heater is divided into a plurality of parts along the longitudinal direction of the film carrier, the efficiency of evaporating the solvent of the synthetic resin liquid can be improved, and the curing speed of the synthetic resin liquid can be increased.

Furthermore, when the heater and pre-heater are formed by far-infrared heaters, the synthetic resin liquid is heated from inside the liquid, so the entire liquid is heated uniformly, and the solvent does not remain in the liquid, preventing foaming. I can do it.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing the structure of one embodiment of a curing furnace for forming semiconductor devices according to the present invention. FIG. 2 is a schematic diagram showing the structure of one embodiment of a conventional hardening furnace for forming semiconductor devices. 9: 2nd lower heater, 10: 1st king heater, 11: 2nd partial heater, 12: 3rd lower heater, 13: 1st
Part heater, 14. Part 318 Heater, ■5 = No. 41
Part Peter, 16: 5th-L Part Heater, 17: 5th Lower Heater, 18: 6th Upper Beater, Output DA Tonu Engineering Co., Ltd.

Claims (1)

[Claims] 1) A roller is horizontally and rotatably installed at a predetermined position in the furnace main body, and at least one pair of heaters are arranged opposite to the upper and lower surfaces of the film carrier that runs while being guided by the roller. 1. A curing furnace for forming a semiconductor device, characterized in that a preheater is disposed opposite to a lower surface of a film carrier above the heater. 2) The curing furnace for forming a semiconductor device according to claim 1, wherein the heater is divided into a plurality of parts along the longitudinal direction of the film carrier. 3) The curing furnace for forming semiconductor devices according to claim 1, wherein the heater and the preheater are formed by far-infrared heaters.