JPH0460919A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH0460919A JPH0460919A JP16411990A JP16411990A JPH0460919A JP H0460919 A JPH0460919 A JP H0460919A JP 16411990 A JP16411990 A JP 16411990A JP 16411990 A JP16411990 A JP 16411990A JP H0460919 A JPH0460919 A JP H0460919A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- film
- hydrogen
- atoms
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052796 boron Inorganic materials 0.000 claims abstract description 38
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 abstract description 53
- 239000001257 hydrogen Substances 0.000 abstract description 30
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 29
- 239000010409 thin film Substances 0.000 abstract description 10
- 230000008878 coupling Effects 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000005859 coupling reaction Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は強磁性金属薄1模を記録層として用いた磁気記
録媒体に係り、さらに詳しくはその保護膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magnetic recording medium using a ferromagnetic metal thin film as a recording layer, and more particularly to a protective film thereof.
近年、記録の高密度化にともない、真空蒸着法。 In recent years, with the increase in recording density, vacuum evaporation methods have become popular.
イオンブレーティング法、スパッタリング法等の物理的
成膜法で形成された金属薄膜型磁気記録媒体の開発が行
なわれている。このような金属薄膜型記録媒体は磁気特
性に優れ、高密度記録に適している反面、摺動特性、耐
食性などの信頼性は未だ満足できるものではない。この
うち摺動特性を向」ニさせるために、強磁性金属薄膜表
面を機械強度に優れた薄い保護膜で被覆する方法がとら
れている。その代表的な材料としてカーボン(C)や酸
化珪素(SiC2)、ホウ素(B)[例えば特開昭6O
−1(1/13161等の無機質保護膜が知られている
。2. Description of the Related Art Metal thin film magnetic recording media formed by physical film forming methods such as ion blasting and sputtering are being developed. Although such metal thin film type recording media have excellent magnetic properties and are suitable for high-density recording, their reliability in terms of sliding properties, corrosion resistance, etc. is still unsatisfactory. Among these methods, in order to improve the sliding properties, a method has been adopted in which the surface of a ferromagnetic metal thin film is coated with a thin protective film having excellent mechanical strength. Typical materials include carbon (C), silicon oxide (SiC2), and boron (B) [e.g.
Inorganic protective films such as -1 (1/13161) are known.
この中でもホウ素膜は真空蒸着法で形成できるため、成
膜速度も太ぎく、実用的な観点から優れた材料である。Among these, the boron film can be formed by vacuum evaporation, so the film formation rate is fast, and it is an excellent material from a practical point of view.
上記ホウ素保I穫I模を用いた金属薄膜型媒体の耐久性
のばらつきは大きく、再現性に乏しいという問題点があ
った。本発明は、」1記したホウ素保護膜の耐摺動性を
向上させ、さらにその再現性を高めることを目的として
いる。There was a problem in that the durability of the metal thin film type media using the above-mentioned boron storage material varied widely and the reproducibility was poor. The present invention aims to improve the sliding resistance of the boron protective film described in 1. and to further improve its reproducibility.
−に記目的は、ホウ素膜中の水素をQ、2at%以下と
することによって達成される。The object described in - is achieved by controlling the hydrogen content in the boron film to Q, 2 at% or less.
耐久性のばらつきの原因を究明するために、保護膜の元
素分析を行なった結果、水素原子が多量に含まれている
ことが判明した。そこで、上記ばらつきの原因が水素原
子にあると予想し、水素含有量の異なるホウ素保護膜を
種々準備して摺動強度を■す定した結果、摺動強度が水
素含有量に依存することを発見し本発明に至った。In order to investigate the cause of the variation in durability, elemental analysis of the protective film was conducted and it was found that it contained a large amount of hydrogen atoms. Therefore, we predicted that the cause of the above variation was due to hydrogen atoms, and as a result of preparing various boron protective films with different hydrogen contents and determining the sliding strength, we found that the sliding strength depends on the hydrogen content. This discovery led to the present invention.
この水素原子は真空蒸着装置、スパッタ装置或いはイオ
ンブレーティング装置等の物理的成膜装置の真空槽に残
存する水蒸気が、電子線やプラズマに照射されて水素と
酸素原子に分解されることによって生じるものである。These hydrogen atoms are generated when water vapor remaining in the vacuum chamber of a physical film forming device such as a vacuum evaporation device, sputtering device, or ion blating device is irradiated with an electron beam or plasma and decomposed into hydrogen and oxygen atoms. It is something.
通常の薄膜形成条件でホウ素膜を作製すると、水素原子
はホウ素と結合し易いため、不可避的にホウ素膜中に取
り込まれる。When a boron film is formed under normal thin film formation conditions, hydrogen atoms are easily incorporated into the boron film because they easily combine with boron.
ホウ素保護膜中の水素含有量を抑えることによって、膜
の強度が向上する理由については、まだ明らかではない
が、おおよそ次のように考えられる。The reason why the strength of the film is improved by suppressing the hydrogen content in the boron protective film is not yet clear, but it is thought to be roughly as follows.
保護膜として優れた耐摺動特性を持つためには、ホウ素
原子間の化学結合が強いこと、すなわちホつ素膜におい
ては、原子間が共有結合によって強くつながっているこ
とが必要である。ところが、ホウ素膜中に水素原子が入
りこむと、水素原子は低い温度でもホウ素原子と結合し
やすいため、ホウ素原子同士の結合を阻害する。その結
果、ホウ素原子間の結合に弱い領域が生し、ホウ素膜の
機械強度が低下するものど考えられる。したがって、摺
動特性を向」ニさせるためには、ホウ素膜中への水素原
子の混入をてきるだけ抑制することが重要と考えられる
。In order to have excellent anti-sliding properties as a protective film, it is necessary that the chemical bonds between boron atoms be strong, that is, in the boron film, the atoms must be strongly connected by covalent bonds. However, when hydrogen atoms enter the boron film, hydrogen atoms easily bond with boron atoms even at low temperatures, which inhibits the bonding between boron atoms. As a result, a region where bonds between boron atoms are weak is generated, and the mechanical strength of the boron film is thought to be reduced. Therefore, in order to improve the sliding properties, it is considered important to suppress the incorporation of hydrogen atoms into the boron film as much as possible.
以下、本発明の詳細を実施例をもって説明する。Hereinafter, the details of the present invention will be explained with reference to examples.
第1図に示す連続巻取蒸着装置を用いて磁気記録媒体を
作製した。基板1には厚さ50μmのテープ状のボリイ
ミ1くフィルムを用いた。ローラ2の表面温度を200
’Cに設定し、蒸着源3からCo−Cr合金を蒸発さ
せ、成膜速度200nm/Sの条件でテープ表面に膜厚
0.2μTn のCo−20υし%Crの垂直磁化強磁
性金属薄膜を形成した。その後蒸着源4からホウ素を蒸
発させ、成(/I)
膜速度10nm/sの条件で膜厚20nmのホウ素保護
膜をCo −Cr膜の表面に形成した1、このB蒸着時
において、水素分圧が時間とともに減少することを利用
して、各種水素分圧条件でホウ素を蒸着し、水素含有量
の異なるホウ素保護膜を作製した。なお、この水素は残
留ガス中に含まれる水蒸気が、電子線によって解離する
ことによって発生するものであり、質量分析器を用いて
その分圧の測定を行なった。A magnetic recording medium was produced using a continuous winding vapor deposition apparatus shown in FIG. As the substrate 1, a tape-shaped polyimide film with a thickness of 50 μm was used. Set the surface temperature of roller 2 to 200
'C, evaporate Co-Cr alloy from the evaporation source 3, and deposit a perpendicularly magnetized ferromagnetic metal thin film of 0.2μTn Co-20μ and %Cr on the tape surface at a deposition rate of 200nm/s. Formed. Thereafter, boron was evaporated from the evaporation source 4 to form a boron protective film with a thickness of 20 nm on the surface of the Co-Cr film at a film speed of 10 nm/s. Taking advantage of the fact that pressure decreases over time, boron was deposited under various hydrogen partial pressure conditions to create boron protective films with different hydrogen contents. Note that this hydrogen is generated when water vapor contained in the residual gas is dissociated by an electron beam, and its partial pressure was measured using a mass spectrometer.
表1にこのようにして作製した試料の特性をまとめたが
、試料1は水素分圧1 X i 0−RTorr、試料
2は2 X 10−9Torr、試料3は5 X 10
−’0Torrの条件で作製したものである。これらの
ホウ素膜中に含まれる水素の量をIMA (イオンマイ
クロアナライザ)を用いて調べたところ、試料]−には
原子数比にして0.5at%、試料2には0.28七%
、試料3には0 、1 at%含まれていることが分か
った。Table 1 summarizes the characteristics of the samples prepared in this way. Sample 1 has a hydrogen partial pressure of 1 X i 0-RTorr, Sample 2 has a hydrogen partial pressure of 2 X 10-9 Torr, and Sample 3 has a hydrogen partial pressure of 5 X 10 Torr.
- It was produced under the condition of 0 Torr. When the amount of hydrogen contained in these boron films was investigated using an IMA (ion microanalyzer), it was found to be 0.5 at% in atomic ratio for sample ]-, and 0.287% for sample 2.
It was found that Sample 3 contained 0 and 1 at%.
次にこ」しらの試料1..2.3を切り抜いて3.5
nのフロッピディスクを作製し、市販のディスク1くラ
イブ装置にかけ、初期の再生出力値が2dB下がるまで
の摺動回数を調べた。その結果を表1に示した。この表
から明らかなように、ホウ素膜中に含まれる水素量が減
少するにつれて摺動回数が向上し、Co−Cr膜の寿命
が延びていることが分かる。特に水素含有量がQ、2a
t%以下の場合には摺動強度が2700kpassとな
り、実用」二問題のない特性が得られることが分かる。Next, sample 1. .. Cut out 2.3 and make 3.5
A floppy disk of No. n was prepared, and the disk was run on a commercially available live device, and the number of times the disk was slid until the initial playback output value decreased by 2 dB was determined. The results are shown in Table 1. As is clear from this table, it can be seen that as the amount of hydrogen contained in the boron film decreases, the number of times of sliding increases, and the life of the Co--Cr film is extended. Especially when the hydrogen content is Q, 2a
It can be seen that when it is less than t%, the sliding strength is 2700 kpass, and characteristics without any practical problems can be obtained.
表1 水素含有量と摺動強度の関係
さらに、ホウ素膜中に含まれる水素原子の量は、吹の実
施例で述べるように、蒸着時の基板温度によってもコン
I・ロールすることが可能である。Table 1 Relationship between hydrogen content and sliding strength Furthermore, the amount of hydrogen atoms contained in a boron film can be controlled by the substrate temperature during vapor deposition, as described in the blowing example. be.
[実施例2コ
ホウ素蒸若時の水素分圧を8 X 10−’Torrと
し、基板温度を種々変えた他は実施例1と同様にして磁
気記録媒体を作製した。この時ホウ素蒸着時における基
板温度を任意に調節するため、蒸着面に向けて赤外ラン
プ6を照射した。ランプの照射電力を変化させることに
より、種々の蒸着温度でホウ素膜を形成した。[Example 2] A magnetic recording medium was produced in the same manner as in Example 1, except that the hydrogen partial pressure during coboron evaporation was 8 x 10-'Torr and the substrate temperature was varied. At this time, in order to arbitrarily adjust the substrate temperature during boron vapor deposition, an infrared lamp 6 was irradiated toward the vapor deposition surface. By changing the irradiation power of the lamp, boron films were formed at various deposition temperatures.
試料4は、赤外ランプ100W、照射時の温度270℃
、試料5は、200Wで320℃、試料6は比較のため
に赤外ランプを照射せずに200℃でホウ素膜を蒸着し
たものである。この方法のよい点は蒸着が行われる瞬間
だけ温度が」二がるため、基板である有機高分子フィル
ムに対する熱的な負担が軽くなることにある。Sample 4 was irradiated with an infrared lamp of 100 W and a temperature of 270°C.
For sample 5, a boron film was deposited at 200 W at 320° C., and for comparison, sample 6 was deposited at 200° C. without irradiation with an infrared lamp. The advantage of this method is that the temperature drops only at the moment of vapor deposition, which reduces the thermal burden on the organic polymer film that is the substrate.
試料4,5.6のホウ素膜中に含まれる水素量と、耐摺
動特性を実施例1と同じ方法で調べ、その結果を表2に
示した。The amount of hydrogen contained in the boron films of Samples 4 and 5.6 and the anti-sliding properties were investigated using the same method as in Example 1, and the results are shown in Table 2.
表2 水素含有量と摺動強度の関係
表2から分かるように、ホウ素蒸着時における水素分圧
が8X10−’と比較的高い条件においても、基板温度
を高くすることによって、水素含有量を減少させ、摺動
強度を向上させることができる。Table 2 Relationship between hydrogen content and sliding strength As can be seen from Table 2, even under conditions where the hydrogen partial pressure during boron evaporation is relatively high at 8X10-', the hydrogen content can be reduced by increasing the substrate temperature. It is possible to improve the sliding strength.
実施例1,2の結果を用いて、ホウ素膜中の水素含有量
と摺動強度の関係を第2図にまとめた。Using the results of Examples 1 and 2, the relationship between the hydrogen content in the boron film and the sliding strength is summarized in FIG.
ホウ素膜の作製条件によらず、水素含有量を0.2at
%以下とすることによって、3000 kpassを越
す優れた摺動強度が得られることが示されている。Regardless of the boron film fabrication conditions, the hydrogen content is 0.2at.
% or less, it has been shown that excellent sliding strength exceeding 3000 kpass can be obtained.
以上の実施例により、ホウ素膜中の水素含有量を減少さ
せることにより摺動強度が著しく向上することを示した
。また、記録層となる金属薄膜がCo−〇系蒸着膜、あ
るいは面内記録用Co −Njスパッタ膜、Go−Pt
スパッタ膜の場合においても、その表面を該保護膜で被
覆すれば同様な効果が得られることも確認している。The above examples have shown that the sliding strength can be significantly improved by reducing the hydrogen content in the boron film. In addition, the metal thin film serving as the recording layer may be a Co--based vapor deposited film, a Co-Nj sputtered film for in-plane recording, or a Go-Pt film.
It has also been confirmed that in the case of a sputtered film, a similar effect can be obtained by covering the surface with the protective film.
以上の実施例から明らかなように、水素含有量の少ない
ホウ素膜を保護i摸として用いることにより、耐摺動特
性の優れた金属薄膜型の媒体を再現性よく得ることが可
能となる。特に水素の含有量を0.2原子%以下とする
ことによって、実用」二問題の無い、3 、 OO0k
pass以上の摺動強度を得ることが可能である。As is clear from the above examples, by using a boron film with a low hydrogen content as a protective film, it is possible to obtain a metal thin film type medium with excellent anti-sliding characteristics with good reproducibility. In particular, by reducing the hydrogen content to 0.2 atomic% or less, there is no problem in practical use.3, OO0k
It is possible to obtain sliding strength greater than pass.
第1図は、本発明に用いた連続蒸着装置の概略図、第2
図はホウ素膜中の水素含有量と摺動強度の関係を示した
図である。
1・・・基板、2・・・回転ローラ、3・・Co −C
r蒸着源、4・・・■3蒸着源、5・・・電子銃、6・
・・赤外ランプ。FIG. 1 is a schematic diagram of the continuous vapor deposition apparatus used in the present invention, and FIG.
The figure shows the relationship between hydrogen content in a boron film and sliding strength. 1...Substrate, 2...Rotating roller, 3...Co-C
r evaporation source, 4...■3 evaporation source, 5...electron gun, 6.
...Infrared lamp.
Claims (1)
る磁気記録媒体において、該保護膜中に含まれる水素原
子の濃度は0.2原子%以下であることを特徴とする磁
気記録媒体。1. A magnetic recording medium having a boron protective film on a ferromagnetic metal film serving as a recording layer, characterized in that the concentration of hydrogen atoms contained in the protective film is 0.2 atomic % or less. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16411990A JPH0460919A (en) | 1990-06-25 | 1990-06-25 | Magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16411990A JPH0460919A (en) | 1990-06-25 | 1990-06-25 | Magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0460919A true JPH0460919A (en) | 1992-02-26 |
Family
ID=15787112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16411990A Pending JPH0460919A (en) | 1990-06-25 | 1990-06-25 | Magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0460919A (en) |
-
1990
- 1990-06-25 JP JP16411990A patent/JPH0460919A/en active Pending
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