JPH0458734U - - Google Patents
Info
- Publication number
- JPH0458734U JPH0458734U JP10132890U JP10132890U JPH0458734U JP H0458734 U JPH0458734 U JP H0458734U JP 10132890 U JP10132890 U JP 10132890U JP 10132890 U JP10132890 U JP 10132890U JP H0458734 U JPH0458734 U JP H0458734U
- Authority
- JP
- Japan
- Prior art keywords
- memory backup
- power supply
- switching element
- memory
- backup power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Calculators And Similar Devices (AREA)
- Power Sources (AREA)
Description
第１図は本考案の一実施例に係る携帯用電子機
器のメモリバツクアツプ回路を示すブロツク回路
図、第２図はバツクアツプ電圧の変化を示す特性
図である。第３図は別の実施例に係るメモリバツ
クアツプ回路のブロツク回路図である。第４図は
従来のメモリバツクアツプ回路を示すブロツク回
路図、第５図はそのバツクアツプ電圧の変化を示
す特性図である。
１……マイクロコンピユータ、２……電源入力
端子、３……システム電源、Ｄ１……逆流防止ダ
イオード、Ｃ１……バツクアツプ用コンデンサ（
メモリバツクアツプ用電源）、Ｑ１……スイツチ
ングトランジスタ（スイツチング素子）、Ｄ２…
…電圧検出用ダイオード（電圧検出素子）、Ｑ２
……トランジスタ（電圧検出素子）、Ｒ１……高
抵抗。
FIG. 1 is a block circuit diagram showing a memory backup circuit for a portable electronic device according to an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing changes in backup voltage. FIG. 3 is a block circuit diagram of a memory backup circuit according to another embodiment. FIG. 4 is a block circuit diagram showing a conventional memory backup circuit, and FIG. 5 is a characteristic diagram showing changes in the backup voltage. 1... Microcomputer, 2... Power input terminal, 3... System power supply, D1... Backflow prevention diode, C1... Backup capacitor (
memory backup power supply), Q1... switching transistor (switching element), D2...
...Voltage detection diode (voltage detection element), Q2
...Transistor (voltage detection element), R1...High resistance.
Claims (1)
ピユータ１の電源入力端子２との間に挿入された
スイツチング素子Ｑ１と、 前記メモリバツクアツプ用電源Ｃ１がメモリ保
持保証電圧Ｖｏを下回つたことを検出して前記ス
イツチング素子Ｑ１を遮断する電圧検出素子Ｄ２
，Ｑ２ とを備えた携帯用電子機器のメモリバツクアツプ
回路。[Claim for Utility Model Registration] A switching element Q1 inserted between the memory backup power supply C1 and the power input terminal 2 of the microcomputer 1, and a switching element Q1 inserted between the memory backup power supply C1 and the memory backup power supply C1 below the memory retention guaranteed voltage Vo. A voltage detection element D2 that detects the rotation and cuts off the switching element Q1.
, Q2, a memory backup circuit for a portable electronic device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10132890U JPH0458734U (en) | 1990-09-26 | 1990-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10132890U JPH0458734U (en) | 1990-09-26 | 1990-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0458734U true JPH0458734U (en) | 1992-05-20 |
Family
ID=31844687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10132890U Pending JPH0458734U (en) | 1990-09-26 | 1990-09-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0458734U (en) |
-
1990
- 1990-09-26 JP JP10132890U patent/JPH0458734U/ja active Pending
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