JPH045805A - Crystal oscillation circuit - Google Patents

Crystal oscillation circuit

Info

Publication number
JPH045805A
JPH045805A JP2106934A JP10693490A JPH045805A JP H045805 A JPH045805 A JP H045805A JP 2106934 A JP2106934 A JP 2106934A JP 10693490 A JP10693490 A JP 10693490A JP H045805 A JPH045805 A JP H045805A
Authority
JP
Japan
Prior art keywords
coil
shaped body
circuit
coiled body
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2106934A
Other languages
Japanese (ja)
Inventor
Riichi Ishida
利一 石田
Yasukazu Tosumi
戸住 泰和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Priority to JP2106934A priority Critical patent/JPH045805A/en
Publication of JPH045805A publication Critical patent/JPH045805A/en
Pending legal-status Critical Current

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  • Coils Or Transformers For Communication (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

PURPOSE:To restrain the phase of a capacity from being turned and to surely execute a higher harmonic oscillation by a method wherein a coil-shaped body is formed on an IC substrate so as to include a resistance element and a conduction element and they are used as a feedback resistance and a coil inside a resonance circuit. CONSTITUTION:Capacities Cg, Cd are formed of P<+> layers D on poly-Si films B inside an SiO2 film 3. The P<+> layer D and an N<+> layer E inside the film 3 are connected by Al interconnections A and the poly-Si B, and an inverter is formed in the intermediate part. Individual constituent parts are connected by through holes 3a. A coil-shaped body 4 is connected to the capacities and the inverter via the Al interconnections A. That is to say, Al elements 4A are formed on the SiO2 film 3, and poly-Si resistance elements 4B are formed in an inclined shape in such a way that end parts of the elements 4A are overlapped in the prescribed depth of the film; they are connected by the connecting holes 3a. When the coil-shaped body 4 is used, a required feedback resistance Rf is provided by the resistance elements 4B and an inductance component is provided by a coil-shaped body. A quartz oscillator 1 is connected to both ends of the coil-shaped body 4. By this constitution, it is possible to restrain the phase of the capacities from being turned in an equivalent circuit and a higher harmonic oscillation is executed satisfactorily.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明は水晶発振回路、特に水晶振動子に並列共振回路
を接続し、オーバートーン発振回路として用いることの
できるIC化された水晶発振回路の構成に関する。
[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a crystal oscillation circuit, particularly an IC crystal oscillation circuit which can be used as an overtone oscillation circuit by connecting a parallel resonant circuit to a crystal resonator. Concerning configuration.

[従来の技術] 従来から、基本波よりも高次の、例えば3次、5次など
の高調波で発振する、いわゆるオーバートーン発振を行
う水晶発振回路が用いられており、この水晶発振回路と
しては、例えばC−MOSを利用したIC回路が使用さ
れる。
[Prior Art] Conventionally, crystal oscillation circuits that perform so-called overtone oscillation, which oscillates with harmonics higher than the fundamental wave, such as third and fifth harmonics, have been used. For example, an IC circuit using C-MOS is used.

第4図には、この種の水晶発振回路の構成が示されてお
り、図(a)において、水晶振動子1には、コイルLL
、帰還抵抗Rf、インバータ2及び充放電用の2個のコ
ンデンサCg、Cdからなる並列共振回路が接続されて
いる。
FIG. 4 shows the configuration of this type of crystal oscillation circuit, and in FIG. 4 (a), the crystal resonator 1 includes a coil LL.
, a feedback resistor Rf, an inverter 2, and two charging/discharging capacitors Cg and Cd.

また、図(b)の回路では、並列共振回路中にコイルL
LをコンデンサCgと並列に接続した並列同調回路であ
るタンク回路を含ませる構成となっている。
In addition, in the circuit of Figure (b), the coil L is in the parallel resonant circuit.
The configuration includes a tank circuit which is a parallel tuned circuit in which L is connected in parallel with a capacitor Cg.

第5図には、上記水晶振動子1の等価回路が示されてお
り、この等価回路は図示されるように、直列に接続され
た抵抗Ro、コイルLo、コンデンサCoとコンデンサ
C1との並列回路となる。
FIG. 5 shows an equivalent circuit of the crystal resonator 1, and as shown in the figure, this equivalent circuit is a parallel circuit consisting of a resistor Ro, a coil Lo, a capacitor Co, and a capacitor C1 connected in series. becomes.

ところで、上記水晶振動子1を用いた発振回路において
、基本波で発振させる場合には問題がないが、30MH
z以上の高調波によりオーバートーン発振を行う場合に
は上記コンデンサC1の位相まわり、すなわち電流と電
圧の位相差(電流が90度遅れる)が無視できな(なり
、高調波発振を妨げてしまうという問題がある。
By the way, in the oscillation circuit using the above-mentioned crystal resonator 1, there is no problem when oscillating with the fundamental wave.
When performing overtone oscillation with harmonics of z or more, the phase difference around the capacitor C1, that is, the phase difference between the current and voltage (the current lags by 90 degrees) cannot be ignored (and it is said that it will prevent harmonic oscillation). There's a problem.

そこで、オーバートーン発振では、上記第4図(a)に
示されるように、コイルL1を水晶振動子1の01と並
列に接続するか、あるいは図(b)に示されるように、
コイルL1をコンデンサCg(又はCdでもよい)に接
続してタンク回路を形成する。そうすると、コイルLl
で生じる電流と電圧の位相差(電圧が90度遅れる)で
上記コンデンサC1で生じる位相差を相殺するようにし
て位相回りを改善することができ、これにより3次、5
次などの高調波の発振を可能としている。
Therefore, in overtone oscillation, the coil L1 is connected in parallel with 01 of the crystal resonator 1 as shown in FIG.
Coil L1 is connected to capacitor Cg (or Cd may be used) to form a tank circuit. Then, coil Ll
The phase difference between the current and voltage (the voltage is delayed by 90 degrees) generated in the capacitor C1 can be canceled out, thereby improving the phase rotation.
It is possible to oscillate the following harmonics.

[発明が解決しようとする課題] しかしながら、従来のIC化されている水晶発振回路で
は、位相まわりを改善して高調波発振を良好に行うため
のコイルはLl、IC回路として形成することができず
、外付けにしなければならないという問題があった。
[Problem to be solved by the invention] However, in the conventional IC-based crystal oscillation circuit, the coil for improving the phase and performing harmonic oscillation well cannot be formed as an IC circuit. First, there was the problem that it had to be connected externally.

また、上記外付けのコイルの存在は水晶発振回路を含ん
だハイブリッドICを形成する場合の障害ともなり、更
にコストの低減も図れない原因となっていた。
Furthermore, the presence of the external coil becomes an obstacle when forming a hybrid IC including a crystal oscillation circuit, and further prevents cost reduction.

本発明は上記問題点に鑑みてなされたものであり、その
目的は、共振回路のコイルを外付けすることなくIC化
し、水晶振動子の等価回路におけるコンデンサの位相回
りを良好に抑制することができる水晶発振回路を提供す
ることにある。
The present invention has been made in view of the above-mentioned problems, and its purpose is to integrate the coil of the resonant circuit into an IC without externally attaching it, and to effectively suppress the phase rotation of the capacitor in the equivalent circuit of the crystal resonator. Our goal is to provide a crystal oscillation circuit that can.

[課題を解決するための手段] 上記目的を達成するために、本発明は、水晶振動子に共
振回路が接続され、この共振回路により高調波での発振
を行う水晶発振回路において、抵抗素子と伝導素子とを
含んで構成されたコイル状体をIC基板に形成し、この
コイル状体を上記共振回路内の帰還抵抗及びコイルとし
て配設したことを特徴とする。
[Means for Solving the Problems] In order to achieve the above object, the present invention provides a crystal oscillator circuit in which a resonant circuit is connected to a crystal resonator, and which oscillates at harmonics by this resonant circuit. The present invention is characterized in that a coiled body including a conductive element is formed on an IC substrate, and this coiled body is disposed as a feedback resistor and a coil in the resonant circuit.

[作用] 上記の構成によれば、例えばIC基板の所定深さ位置に
設けた所定の長さの抵抗素子と、IC基板上に設けた通
常の配線である伝導素子とをコンタクトにより接続しな
がら、全体として螺旋形のコイル状体が形成される。従
って、このコイル状体はインダクタンスを有するコイル
としての役目を行うことができ、コイル状体内の抵抗素
子は帰還抵抗としての役目を行うことが可能となる。
[Function] According to the above configuration, for example, a resistor element of a predetermined length provided at a predetermined depth position of an IC board and a conductive element, which is a normal wiring provided on an IC board, are connected by a contact. , a generally helical coiled body is formed. Therefore, this coiled body can function as a coil having inductance, and the resistance element within the coiled body can function as a feedback resistor.

そして、上記コイル状体を水晶振動子に接続すると、水
晶振動子の等価回路でのコンデンサにコイルを接続した
ことと同等となるので、上記コンデンサの位相回りが抑
制され、高調波の発振が良好に行われる。
When the coil-shaped body is connected to a crystal resonator, it is equivalent to connecting a coil to a capacitor in the equivalent circuit of the crystal resonator, so the phase rotation of the capacitor is suppressed and harmonic oscillation is improved. It will be held on.

[実施例コ 以下、本発明の実施例について図面を参照しながら詳細
に説明する。
[Embodiments] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第1図には、実施例に係る水晶発振回路の構成を示す図
が示されており、図において、IC基板を構成する絶縁
膜3は、例えばシリコン酸化膜(SiO2)であり、こ
の絶縁膜3には上記第4図で示されている共振回路が構
成される。すなわち、図の下の両側には、絶縁膜3内に
形成された長方形のポリシリコン部Bと絶縁膜3上に形
成された長方形のP11拡散りとからなるコンデンサC
g、C,dが設けられており、このコンデンサCg、C
dの間には、絶縁膜3内に形成されたP+拡散部りとN
1拡散部Eとをメタル(アルミニウム)配線A及びポリ
シリコン部Bで接続したインバータが設けられる。なお
、図示される各構成部の接続は、絶縁膜3内に垂直に開
けられた穴であるコンタクト3aにて行われる。
FIG. 1 shows a diagram showing the configuration of a crystal oscillation circuit according to an embodiment. In the diagram, an insulating film 3 constituting an IC substrate is, for example, a silicon oxide film (SiO2), and this insulating film 3 includes a resonant circuit shown in FIG. 4 above. That is, on both sides at the bottom of the figure, there is a capacitor C consisting of a rectangular polysilicon portion B formed in the insulating film 3 and a rectangular P11 diffusion formed on the insulating film 3.
g, C, d are provided, and these capacitors Cg, C
d between the P+ diffusion part formed in the insulating film 3 and the N
An inverter is provided in which the first diffusion part E is connected to the metal (aluminum) wiring A and the polysilicon part B. Note that the connections between the illustrated components are made through contacts 3a, which are holes vertically drilled in the insulating film 3.

そして、上記のコンデンサCg、Cd、インバータに、
メタル配線Aを介して抵抗素子及び伝導素子を含むコイ
ル状体4を接続する。すなわち、コイル状体4の詳細な
構成が第2図に示されており、図示のように絶縁膜3の
上に上記メタル配線Aと同様のアルミニウムからなる伝
導素子4Aを斜めに形成し、絶縁膜3の所定深さ位置に
は上記伝導素子4Aの端部が上からみて重なるようにポ
リシリコンからなる抵抗素子4Bを斜めに形成する。そ
うして、この伝導素子4Aと抵抗素子4Bを、図示され
るように絶縁膜3に開けられた穴であるコンタクト3a
によって連結接続し、最終的に、上記伝導素子4A、抵
抗素子4B及びコンタクト3aにより螺旋状のコイル状
体4を形成する。
Then, to the above capacitors Cg and Cd, and the inverter,
A coiled body 4 including a resistive element and a conductive element is connected via metal wiring A. That is, the detailed structure of the coiled body 4 is shown in FIG. 2, and as shown in the figure, a conductive element 4A made of aluminum similar to the metal wiring A is formed obliquely on the insulating film 3, and the insulating A resistive element 4B made of polysilicon is obliquely formed at a predetermined depth position of the film 3 so that the end of the conductive element 4A overlaps when viewed from above. Then, the conductive element 4A and the resistive element 4B are connected to the contact 3a, which is a hole made in the insulating film 3, as shown in the figure.
Finally, a spiral coiled body 4 is formed by the conductive element 4A, the resistive element 4B, and the contact 3a.

なお、抵抗素子4Bはポリシリコンの他にも、P+拡散
又はN“拡散、P−ウェル又はNウェルなどにより形成
することができる。
In addition to polysilicon, the resistance element 4B can be formed by P+ diffusion, N'' diffusion, P- well, N well, etc.

このようなコイル状体4によれば、抵抗素子4Bの存在
により共振回路に必要な帰還抵抗Rf(第4図)を有し
、またコイル形状によりインダクタンス成分を有するこ
とになる。そして、第1図に示されるように、コイル状
体4の両端部3aに水晶振同子1が接続される。
Such a coiled body 4 has a feedback resistance Rf (FIG. 4) necessary for a resonant circuit due to the presence of the resistance element 4B, and also has an inductance component due to the coil shape. As shown in FIG. 1, a crystal oscillator 1 is connected to both ends 3a of the coiled body 4.

以上の実施例の構成によれば、コイル状体4はまずイン
ダクタ成分の存在により水晶振動子1の等価回路でのコ
ンデンサc1の位相まわりを抑制することができ、共振
回路の共振作用により高調波の発振が確実に行える。例
えば、基本波が10MHz テあれば30MHz、50
 MHz (7)高調波を発振することが可能となる。
According to the configuration of the above embodiment, the coiled body 4 can first suppress the phase of the capacitor c1 in the equivalent circuit of the crystal resonator 1 due to the presence of the inductor component, and the resonance effect of the resonant circuit can suppress harmonics. oscillation can be performed reliably. For example, if the fundamental wave is 10MHz, it is 30MHz, 50MHz.
MHz (7) It becomes possible to oscillate harmonics.

また、コイル状体4の抵抗素子4Bが帰還抵抗Rfとな
るので、インバータ2の動作点を調整して安定した発振
動作が確保されることになる。
Furthermore, since the resistive element 4B of the coiled body 4 serves as a feedback resistor Rf, the operating point of the inverter 2 can be adjusted to ensure stable oscillation operation.

次に、第3図にはコイル状体の他の例が示されており、
図のコイル状体5は、絶縁膜3上に形成されたし形状の
伝導素子5Aと、絶縁膜3内に形成された抵抗素子5B
と、コンタクト3aを螺旋状(コイル状)に連結する。
Next, FIG. 3 shows another example of a coiled body,
The coiled body 5 shown in the figure includes a conductive element 5A formed on an insulating film 3 and a resistive element 5B formed within the insulating film 3.
The contacts 3a are connected in a spiral (coiled) manner.

従って、上記コイル状体5によっても、第1図及び第2
図のコイル状体4と同様の効果を得ることができる。
Therefore, even with the coiled body 5, as shown in FIGS.
The same effect as the coiled body 4 shown in the figure can be obtained.

また、上記実施例はIC基板である絶縁膜3内に2階層
(2段)で伝導素子4A、5Aと抵抗素子4B、5Bを
配置することにより、コイル状体4.5を形成したが、
3階層(3段)やそれ以上の層に伝導素子と抵抗素子を
配置してコイル状体を形成してもよ(、コイル状体の形
状は必要とされるコイルのインダクタンスに応じて適宜
選択することができる。
Further, in the above embodiment, the coiled body 4.5 is formed by arranging the conductive elements 4A, 5A and the resistive elements 4B, 5B in two levels (two stages) in the insulating film 3, which is an IC substrate.
A coiled body may be formed by arranging conductive elements and resistive elements in three or more layers (the shape of the coiled body may be selected as appropriate depending on the required coil inductance). can do.

[発明の効果] 以上説明したように、本発明によれば、抵抗素子と伝導
素子とを含んで構成されるコイル状体をIC基板に形成
し、このコイル状体で帰還抵抗とコイルの両者の役目が
行えるようにしたので、従来のようにコイルを外付けす
る必要がなく、コイルについてもIC化された水晶発振
器を得ることができる。従って上記水晶発振器により水
晶振動子の等価回路におけるコンデンサの位相回りを良
好に抑制することができ、高調波の発振が可能となる。
[Effects of the Invention] As explained above, according to the present invention, a coiled body including a resistive element and a conductive element is formed on an IC substrate, and this coiled body serves as both a feedback resistor and a coil. Therefore, there is no need to attach a coil externally as in the conventional case, and it is possible to obtain a crystal oscillator in which the coil is also integrated into an IC. Therefore, the above crystal oscillator can satisfactorily suppress the phase shift of the capacitor in the equivalent circuit of the crystal resonator, making it possible to oscillate harmonics.

また、コイルを含めてIC化することができるので、ハ
イブリッドICも容易に製作でき、コストの低減も図れ
るという利点がある。
Furthermore, since the coil can be integrated into an IC, a hybrid IC can also be easily manufactured, which has the advantage of reducing costs.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例に係る水晶発振回路をIC回路
で示した構成図、第2図は第1のコイル状体の詳細な構
成を示す図、第3図はコイル状体の他の例の構成を示す
図、第4図は従来の水晶発振回路の二つの構成を示す回
路図、第5図は水晶振動子の等価回路図である。 l・・・水晶振動子、2・・・インバータ、3・・・I
C基板である絶縁膜、 4.5・・・コイル状体、 4A、5A・・・伝導素子、 4B、5B・・・抵抗素子、 Ll・・・コイル、Rf −・・帰還抵抗、C1,Cg
、Cd・・・コンデンサ。 特許出願人 新日本無線株式会社
FIG. 1 is a configuration diagram showing a crystal oscillation circuit according to an embodiment of the present invention as an IC circuit, FIG. 2 is a diagram showing the detailed configuration of the first coiled body, and FIG. 3 is a diagram showing the detailed configuration of the first coiled body. FIG. 4 is a circuit diagram showing two configurations of a conventional crystal oscillation circuit, and FIG. 5 is an equivalent circuit diagram of a crystal resonator. l...Crystal resonator, 2...Inverter, 3...I
C substrate insulating film, 4.5... Coiled body, 4A, 5A... Conduction element, 4B, 5B... Resistance element, Ll... Coil, Rf -... Feedback resistor, C1, Cg
, Cd... capacitor. Patent applicant New Japan Radio Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] (1)水晶振動子に共振回路が接続され、この共振回路
により高調波での発振を行う水晶発振回路において、抵
抗素子と伝導素子とを含んで構成されたコイル状体をI
C基板に形成し、このコイル状体を上記共振回路内の帰
還抵抗及びコイルとして配設したことを特徴とする水晶
発振回路。
(1) In a crystal oscillation circuit in which a resonant circuit is connected to a crystal resonator and the resonant circuit oscillates at harmonics, a coil-shaped body including a resistive element and a conductive element is used as an I
A crystal oscillation circuit, characterized in that the coil-shaped body is formed on a C substrate and is disposed as a feedback resistor and a coil in the resonant circuit.
JP2106934A 1990-04-23 1990-04-23 Crystal oscillation circuit Pending JPH045805A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2106934A JPH045805A (en) 1990-04-23 1990-04-23 Crystal oscillation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2106934A JPH045805A (en) 1990-04-23 1990-04-23 Crystal oscillation circuit

Publications (1)

Publication Number Publication Date
JPH045805A true JPH045805A (en) 1992-01-09

Family

ID=14446230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2106934A Pending JPH045805A (en) 1990-04-23 1990-04-23 Crystal oscillation circuit

Country Status (1)

Country Link
JP (1) JPH045805A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008199568A (en) * 2007-01-18 2008-08-28 Nippon Dempa Kogyo Co Ltd Third overtone crystal oscillator
JP2010177852A (en) * 2009-01-28 2010-08-12 Oki Semiconductor Co Ltd Oscillator circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008199568A (en) * 2007-01-18 2008-08-28 Nippon Dempa Kogyo Co Ltd Third overtone crystal oscillator
JP2010177852A (en) * 2009-01-28 2010-08-12 Oki Semiconductor Co Ltd Oscillator circuit

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