JPH0455533B2 - - Google Patents
Info
- Publication number
- JPH0455533B2 JPH0455533B2 JP23283588A JP23283588A JPH0455533B2 JP H0455533 B2 JPH0455533 B2 JP H0455533B2 JP 23283588 A JP23283588 A JP 23283588A JP 23283588 A JP23283588 A JP 23283588A JP H0455533 B2 JPH0455533 B2 JP H0455533B2
- Authority
- JP
- Japan
- Prior art keywords
- prevention layer
- electrostatic breakdown
- breakdown prevention
- film
- wire bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000002265 prevention Effects 0.000 claims description 38
- 230000015556 catabolic process Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011195 cermet Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、表面に静電破壊防止層を有するハイ
ブリツドIC等の電子部品に係り、特にサーマル
ヘツド、等倍型のイメージセンサ等、その表面に
静電破壊防止層をもつ長尺の電子デバイスの静電
破壊防止層接地構造に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to electronic components such as hybrid ICs having an electrostatic breakdown prevention layer on their surfaces, and particularly to electronic components such as thermal heads and 1-magnification image sensors. This invention relates to an electrostatic breakdown prevention layer grounding structure for a long electronic device having an electrostatic breakdown prevention layer.
サーマルヘツド、等倍型のイメージセンサ等の
長尺電子デバイスは、実際の使用時において、そ
の表面が、感熱記録紙、熱転写リボン、被読取物
等と直接接触しながら摺動することになるため、
デバイス表面に静電気が発生し、ときとして、デ
バイス機能回路部分に静電破壊現象が起き、デバ
イス破壊を起こすことがある。
During actual use, long electronic devices such as thermal heads and 1-magnification image sensors slide in direct contact with thermal recording paper, thermal transfer ribbons, objects to be read, etc. ,
Static electricity is generated on the device surface, and sometimes electrostatic damage occurs in the device's functional circuitry, causing device destruction.
このため、デバイス表面に静電電荷の分散用半
絶縁層（ρ≒106〜109Ωcm）を形成することが行
われている。そして、この分散用の半絶縁層を接
地電位に接続することでその効果が飛躍的に改善
されることが知られている。 For this reason, a semi-insulating layer (ρ≈10 6 to 10 9 Ωcm) for dispersing electrostatic charges is formed on the surface of the device. It is known that the effect can be dramatically improved by connecting this semi-insulating layer for dispersion to ground potential.
第７図は、この静電電荷分散用の半絶縁層を形
成した従来の電子デバイスの例である。 FIG. 7 is an example of a conventional electronic device in which a semi-insulating layer for electrostatic charge dispersion is formed.
第７図において、１は静電電荷分散用の半絶縁
層としての静電破壊防止層であり、この下部に設
けられている機能膜７に蓄積する静電電荷を分散
する。機能膜７は、電子デバイスがサーマルヘツ
ドである時には、発熱抵抗体、抵抗体への給電用
の電極膜或いは耐摩耗性保護膜である。通常、静
電破壊防止層１には、サーメツトや半絶縁性半導
体が使用されている。 In FIG. 7, reference numeral 1 denotes an electrostatic breakdown prevention layer as a semi-insulating layer for electrostatic charge dispersion, which disperses electrostatic charges accumulated in the functional film 7 provided below. When the electronic device is a thermal head, the functional film 7 is a heating resistor, an electrode film for power supply to the resistor, or a wear-resistant protective film. Usually, the electrostatic breakdown prevention layer 1 is made of cermet or semi-insulating semiconductor.
６は基板であり、サーマルヘツドの場合には、
通常グレーズドセラミツク基板が用いられてい
る。１０は電子デバイスの構造体であり、例えば
ヒートシンクである。８は回路配線基板であり、
サーマルヘツド駆動用の駆動回路等が形成されて
いる。９は回路配線基板上に設けられた接地電位
の配線部である。 6 is a board, and in the case of a thermal head,
A glazed ceramic substrate is usually used. 10 is a structure of an electronic device, for example a heat sink. 8 is a circuit wiring board;
A drive circuit for driving the thermal head and the like are formed. Reference numeral 9 denotes a ground potential wiring section provided on the circuit wiring board.
この従来例においては、静電破壊防止層を接地
するため、静電破壊防止層１と接地電位配線部９
とを接続用金属片１２で結んでいる。１１は、金
属片１２と静電破壊防止層１、及び接地電位配線
部９とを接続するための導電性接着材である。 In this conventional example, in order to ground the electrostatic breakdown prevention layer, the electrostatic breakdown prevention layer 1 and the ground potential wiring section 9 are connected to each other.
and are connected by a connecting metal piece 12. Reference numeral 11 denotes a conductive adhesive for connecting the metal piece 12, the electrostatic breakdown prevention layer 1, and the ground potential wiring section 9.
これにより、静電破壊防止層１の接地を完全に
行うことができ、蓄積静電荷による静電破壊現像
を最小限に抑えることができる。 Thereby, the electrostatic damage prevention layer 1 can be completely grounded, and electrostatic damage development due to accumulated static charges can be minimized.
ところが、静電破壊防止層１には、サーメツト
や、半絶縁性半導体が用いられるのが一般的であ
り、それらの膜は、半田付け、ＡやAu，Cu線
を用いたワイヤーボンデイングという接続方法の
使用が不可能であつた。
However, cermet or semi-insulating semiconductor is generally used for the electrostatic breakdown prevention layer 1, and these films can be connected by soldering or wire bonding using A, Au, or Cu wires. It was impossible to use.
このため、硬化型の導電性ペースト、例えば導
電性のエポキシ樹脂を用いたり、金属片からなる
部材を圧着、圧接したりして、接地線を形成して
いた。 For this reason, the ground wire has been formed by using a hardening type conductive paste, for example, a conductive epoxy resin, or by crimping or pressing a member made of a metal piece.
そのため、前者の場合には、
(1) ペーストと分散用半絶縁層の機械的付着強度
が弱い、
(2) 表面に突起を形成することとなる、
(3) mm単位の接続線が必要となり、その固着のた
めの面積も大きくなる、
(4) ICや電気回路の形成、実装工程以外の工程
が必要となる、
等の問題点を有することになる。 Therefore, in the former case, (1) the mechanical adhesion strength between the paste and the dispersion semi-insulating layer is weak, (2) protrusions are formed on the surface, and (3) connecting wires on the order of mm are required. (4) Processes other than the formation and mounting process of ICs and electric circuits are required, and other problems arise.
また、後者の場合には、
(1) 圧着、圧接のため、下地を傷める、ことの
外、前者と同様、
(2) 表面に突起を形成することになる、
(3) mm単位の接続線が必要となり、その固着のた
めの面積も大きくなる、
(4) ICや電気回路の形成、実装工程以外の工程
が必要となる、
という問題点を有している。 In the latter case, (1) crimping and pressure welding will damage the underlying material, but as in the former case, (2) protrusions will be formed on the surface, and (3) connecting wires in mm units. (4) Processes other than IC and electric circuit formation and mounting processes are required.
この発明は、このような点に鑑みてなされたも
のであり、接続が確実かつ容易であり、接地線接
続のための特別な工程を必要とせず、しかも、接
地線接続のための面積が少なくてすむ接地線の接
続構造を提供することを目的とする。 This invention was made in view of the above points, and the connection is reliable and easy, does not require a special process for connecting the grounding wire, and moreover, the area for connecting the grounding wire is small. The purpose of this invention is to provide a connection structure for grounding wires that is easy to use.
上述の問題点を解決するため、本発明では、接
地すべき静電破壊防止層の近傍に、ボンデイング
用の膜を設け、この膜に対してワイヤボンデイン
グを行つたさいのボールボンド部分またはテール
ボンド部分の近傍のボンデイングワイヤを前記静
電破壊防止層に接触せしめ、静電破壊防止層を接
地させることを特徴とする。
In order to solve the above-mentioned problems, in the present invention, a bonding film is provided near the electrostatic breakdown prevention layer to be grounded, and when wire bonding is performed to this film, the ball bond part or tail bond A bonding wire near the portion is brought into contact with the electrostatic breakdown prevention layer to ground the electrostatic breakdown prevention layer.
これにより前記の課題を解決した接続構造を提
供できる。 This makes it possible to provide a connection structure that solves the above problems.
本発明を、第１図〜第６図に示した実施例によ
つて説明する。第１図〜第６図において、第７図
に示した従来例と同様の部分には、同一の番号を
付与してあるので、以下の実施例の説明では、こ
れらの部分の詳細な説明は省略する。
The present invention will be explained with reference to the embodiments shown in FIGS. 1 to 6. In FIGS. 1 to 6, the same numbers are given to the same parts as in the conventional example shown in FIG. Omitted.
(1) 第１の実施例
第１図は、この発明の第１の実施例であり、電
子デバイスの帯電防止層を接地する部分の断面図
を示している。図において、１は静電破壊防止
層、７は機能膜、６は基板、８は回路配線基板、
９は接地電位配線部、１０は構造体であり、これ
らの部材は第７図と共に説明した従来例と同様で
ある。(1) First Embodiment FIG. 1 is a first embodiment of the present invention, and shows a sectional view of a portion where an antistatic layer of an electronic device is grounded. In the figure, 1 is an electrostatic breakdown prevention layer, 7 is a functional film, 6 is a substrate, 8 is a circuit wiring board,
Reference numeral 9 denotes a ground potential wiring section, and 10 denotes a structure, and these members are the same as those in the conventional example explained in conjunction with FIG.
この第１の実施例の場合、基板６上で、静電破
壊防止層１に隣接して、Ａ膜等によるワイヤボ
ンデイング用膜２を設けると共に、ボールボンド
部３がこのワイヤボンデイング用膜２及び静電破
壊防止層１上にくるようにして、ボンデイングワ
イヤ５のボールボンドを行う。 In the case of this first embodiment, a wire bonding film 2 made of A film or the like is provided on the substrate 6 adjacent to the electrostatic breakdown prevention layer 1, and the ball bonding portion 3 is connected to the wire bonding film 2 and the wire bonding film 2. The bonding wire 5 is ball-bonded so as to be placed on the electrostatic breakdown prevention layer 1.
ワイヤボンデイング用膜２は、例えばＡ等、
普通のワイヤボンデイングが可能な膜で構成され
ているので、ボールボンド部３はワイヤボンデイ
ング用膜２上に確実にボンデイングされる。静電
破壊防止層１上のボールボンド部３は、静電破壊
防止層１と一体に結合されることはないが、図示
のとおり、その表面で接触しており、電気的に良
好に接続されることになる。図中矢印Ａは、静電
破壊防止層１とボールボンド部３の接触点であ
る。ボンデイングワイヤ５の他端は、接地電位配
線部９上にテールボンドされる。なお、この場
合、ワイヤボンデイング用膜２上にボールボンド
部３の1/2以上が位置することが望ましく、また、
ワイヤボンデイング用膜２と静電破壊防止層１と
の間は、40μm以内とすることが望ましい。 The wire bonding film 2 is, for example, A, etc.
Since it is made of a film that can be used for ordinary wire bonding, the ball bond portion 3 is reliably bonded onto the wire bonding film 2. The ball bond part 3 on the electrostatic breakdown prevention layer 1 is not integrally bonded to the electrostatic breakdown prevention layer 1, but as shown in the figure, it is in contact with the surface thereof and is electrically well connected. That will happen. Arrow A in the figure is a contact point between the electrostatic breakdown prevention layer 1 and the ball bond part 3. The other end of the bonding wire 5 is tail-bonded onto the ground potential wiring section 9. In this case, it is desirable that 1/2 or more of the ball bond portion 3 be located on the wire bonding film 2, and
The distance between the wire bonding film 2 and the electrostatic breakdown prevention layer 1 is preferably within 40 μm.
(2) 第２の実施例
第２図は、この発明の第２の実施例である。こ
の実施例では、ワイヤボンデイング用膜２を静電
破壊防止層１の下にまで延長して設けている外、
他の構成は第１の実施例と同様である。この実施
例の場合は、ワイヤボンデイング用膜２と静電破
壊防止層１との間を、充分小さくすることがで
き、小型化に寄与することができる。(2) Second Embodiment FIG. 2 shows a second embodiment of the present invention. In this embodiment, the wire bonding film 2 is extended below the electrostatic breakdown prevention layer 1, and
The other configurations are the same as in the first embodiment. In the case of this embodiment, the distance between the wire bonding film 2 and the electrostatic breakdown prevention layer 1 can be made sufficiently small, contributing to miniaturization.
(3) 第３の実施例
第３図は、この発明の第３の実施例である。第
３図において、１は静電破壊防止層、７は機能
膜、６は基板、８は回路配線基板、９は接地電位
配線部、１０は構造体であり、これらの部材は第
７図と共に説明した従来例、及び第１図、第２図
に示した実施例と同様である。(3) Third Embodiment FIG. 3 shows a third embodiment of the present invention. In FIG. 3, 1 is an electrostatic breakdown prevention layer, 7 is a functional film, 6 is a substrate, 8 is a circuit wiring board, 9 is a ground potential wiring part, and 10 is a structure, and these members are shown in FIG. This is similar to the conventional example described above and the embodiments shown in FIGS. 1 and 2.
この実施例では、静電破壊防止層１に開孔を開
けて、この開孔部分にワイヤボンデイング用膜２
を設け、この部分でボンデイングワイヤ５をワイ
ヤボンデイング用膜２上にテールボンドし、さら
に、ボンデイングワイヤ５の他端を、接地電位配
線部９上にボールボンドしている。 In this embodiment, an opening is made in the electrostatic breakdown prevention layer 1, and a wire bonding film 2 is placed in the opening.
The bonding wire 5 is tail-bonded onto the wire bonding film 2 at this portion, and the other end of the bonding wire 5 is ball-bonded onto the ground potential wiring portion 9.
これにより、点Ａの所でボンデイングワイヤ５
が静電破壊防止層１に接触し電気的な接地がとら
れる。なお、この場合、ワイヤボンデイング用膜
２と静電破壊防止層１との間は、300μm以下とす
ることが望ましい。 As a result, bonding wire 5 is placed at point A.
contacts the electrostatic breakdown prevention layer 1 and is electrically grounded. In this case, it is desirable that the distance between the wire bonding film 2 and the electrostatic breakdown prevention layer 1 be 300 μm or less.
(4) 第４の実施例
第４図は、この発明の第４の実施例である。こ
の実施例では、静電破壊防止層１の開孔部に設け
たワイヤボンデイング用膜２の端部を、静電破壊
防止層１の下部にまで延長していることの外、そ
の他の構成は第３の実施例と同様である。この実
施例では、静電破壊防止層１の端部とワイヤボン
デイング用膜２との距離を短くできることから、
より一層の小型化が可能である。(4) Fourth Embodiment FIG. 4 shows a fourth embodiment of the present invention. In this example, the end of the wire bonding film 2 provided in the opening of the electrostatic breakdown prevention layer 1 is extended to the lower part of the electrostatic breakdown prevention layer 1, and the other configurations are as follows. This is similar to the third embodiment. In this embodiment, since the distance between the end of the electrostatic breakdown prevention layer 1 and the wire bonding film 2 can be shortened,
Further miniaturization is possible.
(5) 第５の実施例
第５図は、この発明の第５の実施例である。こ
の実施例では、回路配線基板８を用いることな
く、基板６を延長して設け、この上にワイヤボン
デイング用膜２を設けている。このワイヤボンデ
イング用膜２上にボンデインワイヤ５をテールボ
ンドし、さらに、ワイヤボンデイング用膜２の端
部において、静電破壊防止層１の上にかかるよう
にしてボールボンドする。(5) Fifth Embodiment FIG. 5 shows a fifth embodiment of the present invention. In this embodiment, the circuit wiring board 8 is not used, but the board 6 is provided as an extension, and the wire bonding film 2 is provided thereon. A bond wire 5 is tail-bonded onto this wire bonding film 2, and further ball-bonded at the end of the wire bonding film 2 so as to cover the electrostatic breakdown prevention layer 1.
(6) 第６の実施例
第６図は、この発明の第６の実施例である。こ
の実施例では、第３の実施例と同様、静電破壊防
止層１に開孔部を設け、この開孔部にワイヤボン
デイング用膜２を設け、この部分にボンデイング
ワイヤ５をテールボンドしており、ただ、回路配
線基板８を設けることなく基板６を延長して、こ
の基板６上に直接接地電位配線部９を形成してい
る。(6) Sixth Embodiment FIG. 6 shows the sixth embodiment of the present invention. In this embodiment, similarly to the third embodiment, an opening is provided in the electrostatic breakdown prevention layer 1, a wire bonding film 2 is provided in this opening, and a bonding wire 5 is tail-bonded to this part. However, the circuit wiring board 8 is not provided, but the board 6 is extended, and the ground potential wiring section 9 is directly formed on the board 6.
以上に述べた第１〜第６の実施例では、静電破
壊防止層１との接触点は一箇所であるが、長尺の
電子デバイスの長手方向に複数箇所設けても良い
ことはいうまでもなく、この場合は、接続確立が
さらに高くなり、デバイス中での接地が確実とな
る。 In the first to sixth embodiments described above, the contact point with the electrostatic breakdown prevention layer 1 is at one point, but it goes without saying that it may be provided at multiple points in the longitudinal direction of the elongated electronic device. In this case, the connection establishment is even higher and grounding within the device is ensured.
また、以上に述べたワイヤボンデイングは、こ
の接地の為のみに用いられるのではなく、電子デ
バイスに実装されるIC等のベアチツプの実装方
式と同一であり、同一の工程で実施できる。 Furthermore, the wire bonding described above is not only used for this grounding, but is also the same as the mounting method for bare chips such as ICs mounted in electronic devices, and can be carried out in the same process.
以上述べたとおり、本発明によれば、
(1) 従来の接続方式に比較して、その接続に要す
る領域を狭くできる。即ち、従来mmオーダで
あつた必要領域の長さが、一桁小さい100μmオ
ーダで可能であり、省スペース化が図られる。
また、外観上の突起の発生を防止できる、
(2) 電子デバイスの制御素子として実装される
IC等のベアチツプの実装方法と同じワイヤボ
ンデイングによつて接続が行われるので、同一
工程での接続が可能であり、特別な装置等を必
要とせず、その実施が容易である、
(3) 接続方法がIC等に用いられているワイヤボ
ンデイングであり、信頼性の高い接続が可能で
ある、
(4) 接続を行うために、新たな膜構成は不要であ
り（ICの実装用の膜を使用できる）、単なるパ
ターンの変更又は従来パターンの応用によつて
実現可能である、
という優れた作用効果を有している。
As described above, according to the present invention, (1) The area required for the connection can be narrowed compared to the conventional connection method. In other words, the length of the required region, which was conventionally on the order of mm, can be reduced by one order of magnitude to the order of 100 μm, resulting in space savings.
Also, it can prevent the appearance of protrusions. (2) It can be implemented as a control element in electronic devices.
Since connections are made using wire bonding, which is the same method used for mounting bare chips such as ICs, connections can be made in the same process, and no special equipment is required, making it easy to implement. (3) Connection The method is wire bonding, which is used for ICs, etc., and allows for highly reliable connections. (4) No new film configuration is required to make the connection (the film used for mounting the IC is used). It has the following excellent effects: it can be realized by simply changing the pattern or by applying a conventional pattern.
第１図〜第６図は本発明の実施例を示す図、第
７図は従来例を示す図である。
１……静電破壊防止層（半絶縁層）、２……ワ
イヤボンデイング用膜、３……ボールボンド部、
４……テールボンド部、５……ボンデイングワイ
ヤ、６……基板、７……機能膜、８……回路配線
基板、９……接地電位配線部、１０……構造体。
1 to 6 are diagrams showing an embodiment of the present invention, and FIG. 7 is a diagram showing a conventional example. 1... Electrostatic breakdown prevention layer (semi-insulating layer), 2... Wire bonding film, 3... Ball bonding part,
4... Tail bond part, 5... Bonding wire, 6... Substrate, 7... Functional film, 8... Circuit wiring board, 9... Ground potential wiring part, 10... Structure.
Claims (1)
成された機能膜を有する電子デバイスにおいて、
前記静電破壊防止層の近傍にボンデイング用膜を
設けると共に、一端が接地電位の配線部分に接続
され、他端が前記ボンデイング用膜上にボンデイ
ングされ、かつ、前記静電破壊防止層に電気的に
導通するように接触されたボンデイングワイヤを
設けたことを特徴とする電子デバイスにおける静
電破壊防止層接地構造。1. In an electronic device having a functional film on which an electrostatic breakdown prevention layer consisting of a semi-insulating layer is formed,
A bonding film is provided in the vicinity of the electrostatic breakdown prevention layer, one end is connected to a wiring portion at ground potential, the other end is bonded on the bonding film, and the electrostatic breakdown prevention layer is electrically connected. What is claimed is: 1. An electrostatic breakdown prevention layer grounding structure for an electronic device, characterized in that a bonding wire is provided in conductive contact with the electrostatic breakdown prevention layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23283588A JPH0281465A (en) | 1988-09-17 | 1988-09-17 | Construction for grounding static breakdown protective layer in electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23283588A JPH0281465A (en) | 1988-09-17 | 1988-09-17 | Construction for grounding static breakdown protective layer in electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0281465A JPH0281465A (en) | 1990-03-22 |
| JPH0455533B2 true JPH0455533B2 (en) | 1992-09-03 |
Family
ID=16945536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23283588A Granted JPH0281465A (en) | 1988-09-17 | 1988-09-17 | Construction for grounding static breakdown protective layer in electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0281465A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6368520B2 (en) * | 2014-03-31 | 2018-08-01 | ローム株式会社 | Thermal print head |
-
1988
- 1988-09-17 JP JP23283588A patent/JPH0281465A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0281465A (en) | 1990-03-22 |
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