JPH0455328A - Production of glass thin film - Google Patents
Production of glass thin filmInfo
- Publication number
- JPH0455328A JPH0455328A JP16596590A JP16596590A JPH0455328A JP H0455328 A JPH0455328 A JP H0455328A JP 16596590 A JP16596590 A JP 16596590A JP 16596590 A JP16596590 A JP 16596590A JP H0455328 A JPH0455328 A JP H0455328A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- thin film
- film
- production
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 25
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000002419 bulk glass Substances 0.000 claims abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 239000010419 fine particle Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003301 hydrolyzing effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 18
- 238000004544 sputter deposition Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 238000003980 solgel method Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 6
- 239000002019 doping agent Substances 0.000 abstract description 4
- 238000009833 condensation Methods 0.000 abstract description 3
- 230000005494 condensation Effects 0.000 abstract description 3
- 230000018044 dehydration Effects 0.000 abstract description 3
- 238000006297 dehydration reaction Methods 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- -1 silicon alkoxide Chemical class 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- HDGGAKOVUDZYES-UHFFFAOYSA-K erbium(iii) chloride Chemical compound Cl[Er](Cl)Cl HDGGAKOVUDZYES-UHFFFAOYSA-K 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000087 laser glass Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光導波路などに用いるガラス薄膜の作製方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing a glass thin film used for optical waveguides and the like.
ガラス材料は、透光性及び耐候性に優れており、光学的
材料として有用である。特に各種のドーパント材を添加
することにより、光学的機能性の高いガラスが合成され
ている。その代表的なものには、希土類元素であるネオ
ジウムやエルビウム等をドープすることによりレーザ発
振特性を有するレーザガラス、あるいは硫化カドミウム
や塩化銅などの半導体微粒子を添加した非線形光学ガラ
スなどがある。Glass materials have excellent light transmittance and weather resistance, and are useful as optical materials. In particular, glasses with high optical functionality are synthesized by adding various dopant materials. Typical examples include laser glass that has laser oscillation characteristics by doping with rare earth elements such as neodymium and erbium, and nonlinear optical glass doped with semiconductor particles such as cadmium sulfide and copper chloride.
この様なガラスの合成方法として、−船内には融液法と
ゾルゲル法が用いられている。As methods for synthesizing such glass, the melt method and the sol-gel method are used on board.
融液法を用いた場合、例えばシリカガラスの合成時の様
に、2000℃以上の高温を必要とすることもあり、添
加されるドーパント材に様々な影1を与えやすい。一方
、ゾルゲル法を用いた場合、前述のシリカガラスは、1
200℃程度の比較的低温で合成することができる。従
って、高温領域では分解あるいは分相して、添加不能で
あった物質でも、ゾルゲル法ではこれを添加したガラス
の合成ができる。When the melt method is used, as in the case of synthesizing silica glass, for example, a high temperature of 2000° C. or higher may be required, which tends to affect the added dopant material in various ways. On the other hand, when using the sol-gel method, the above-mentioned silica glass
It can be synthesized at a relatively low temperature of about 200°C. Therefore, even if a substance cannot be added due to decomposition or phase separation in a high temperature range, it is possible to synthesize a glass containing this substance using the sol-gel method.
ところで、前述の様な光学的機能性の高いガラスを用い
て先導波路などの集積化した光学部品を作製する場合に
は、薄膜化が必要不可欠な技術である。そのため、合成
のみでなく薄膜化にも有効な方法の一つであるとして、
ゾルゲル法は用いられてきた。By the way, when producing integrated optical components such as a guiding waveguide using glass with high optical functionality as described above, thinning the glass is an indispensable technique. Therefore, it is considered to be an effective method not only for synthesis but also for thin film formation.
Sol-gel methods have been used.
このゾルゲル法による薄膜形成の一般的方法としては、
例えば「窯業協会誌」 90、(6)9.328〜3B
2 (1982年)に示されているように、まず、エチ
ルシリケート、チタンイソプロポキシドとエタノール、
水、触媒として塩酸を加えて撹拌し、加水分解溶液、即
ちコーテイング液を調製する。次に、コーティングを施
す基板をこの溶液に浸漬し、一定速度で引き上げること
によりu板表面に膜を形成させ、乾燥、及び加熱工程を
経てガラス膜を作製する。The general method for forming thin films using this sol-gel method is as follows:
For example, "Ceramic Industry Association Magazine" 90, (6) 9.328-3B
2 (1982), first, ethyl silicate, titanium isopropoxide and ethanol,
Water and hydrochloric acid as a catalyst are added and stirred to prepare a hydrolysis solution, ie, a coating solution. Next, the substrate to be coated is immersed in this solution and pulled up at a constant speed to form a film on the surface of the U plate, followed by drying and heating steps to produce a glass film.
このゾルゲル法による膜形成は溶液を経由するため、大
型の基板でもその表面全体にわたって均一なコーティン
グを比較的容易に行うことができ、機械的・化学的保護
、光学特性などの新しい機能を持つ膜のコーティング法
として有用である。Since film formation using this sol-gel method goes through a solution, it is relatively easy to uniformly coat the entire surface of large substrates, and the film has new functions such as mechanical and chemical protection and optical properties. It is useful as a coating method.
前述のゾルゲル法では、膜厚0.1μm〜0.3μmの
透明均一なコーテイング膜が得られているが、膜厚をこ
れ以上厚くすることを試みた場合、コーテイング膜上に
クラックが発生したり、白い曇りや基板からの剥離等の
欠陥が生じることがあった。そこで、これらの欠陥を生
じさせないために、増粘剤としてグリセリン、エチルエ
ーテルを加える方法を用いて膜を厚くしようとしても、
形成可能な膜厚はせいぜい0.5μ腸までが限界である
。In the aforementioned sol-gel method, a transparent and uniform coating film with a film thickness of 0.1 μm to 0.3 μm is obtained, but if an attempt is made to increase the film thickness beyond this, cracks may occur on the coating film. , defects such as white clouding and peeling from the substrate may occur. Therefore, in order to prevent these defects from occurring, attempts were made to thicken the film by adding glycerin or ethyl ether as thickeners.
The maximum film thickness that can be formed is 0.5 μm at most.
従って、光導波路などの光部品として必要な膜厚5〜1
0μ−程度のガラス薄膜の作製には不適であるという問
題があった。Therefore, the film thickness required for optical components such as optical waveguides is 5 to 1.
There was a problem in that it was unsuitable for producing a glass thin film of about 0 μm.
本発明は、この様な問題を解決するためのものである。The present invention is intended to solve such problems.
本発明は、金属アルコキシドに、水、及びアルコールを
加えると共に、機能性無機材料を添加して混合液とし、
加水分解及び脱水縮合させてバルクガラスを合成する第
1のステップと、その合成されたバルクガラスをターゲ
ットにスパッタリングすることによって、バルクガラス
と同組成のガラス薄膜を作製する第2のステップとを備
えることを特徴とする。The present invention adds water and alcohol to a metal alkoxide, and also adds a functional inorganic material to form a mixed liquid,
A first step of synthesizing bulk glass through hydrolysis and dehydration condensation, and a second step of producing a glass thin film having the same composition as the bulk glass by sputtering the synthesized bulk glass onto a target. It is characterized by
本発明によれば、バルクガラスは高温過程を経ることな
く得られるために、添加する各種ドーパント(イにはほ
とんと影響を与えることがない。また、スパッタリング
によって薄膜を形成していくため、薄膜化時の組成変化
が少なく、膜厚制御が粘密にでき、厚膜化する際も、ク
ラックやはがれ等の欠陥が生じにくい。According to the present invention, since bulk glass is obtained without going through a high-temperature process, it has almost no effect on the various dopants added. There is little change in the composition during oxidation, the film thickness can be tightly controlled, and defects such as cracks and peeling are less likely to occur even when the film is thickened.
次に本発明に係るガラス薄膜の作製方法の実施例を説明
する。Next, an example of the method for producing a glass thin film according to the present invention will be described.
まず、バルクガラスを合成するため、金属アルコキシド
に水、アルコール、及び触媒を加えて混合させ、加水分
解させる。金属アルコキシドには、その金属部位がチタ
ン、アルミニウム、ゲルマニウム、ホウ素のいずれかで
あり、またそのアルキル基がメチル基、エチル基、プロ
ピル基、ブチルハのいずれかであるものが使用できる。First, in order to synthesize bulk glass, water, alcohol, and a catalyst are added to metal alkoxide, mixed, and hydrolyzed. As the metal alkoxide, those whose metal moieties are titanium, aluminum, germanium, or boron, and whose alkyl groups are methyl, ethyl, propyl, or butyl groups can be used.
以上の様な官能基を有する金属アルコキシドを、1〜3
種類同時に使用することも可能である。1 to 3 metal alkoxides having the above functional groups.
It is also possible to use both types at the same time.
次に、この混合液に機能性無機材料を添加する。Next, a functional inorganic material is added to this mixed solution.
添加材料としては、ネオジウムやエルビウム等の、レー
ザ発振機能を有する希土類元素、あるいは硫化カドミウ
ムや塩化銅等の非線形光学効果を示す半導体微粒子が適
している。As the additive material, rare earth elements having a laser oscillation function such as neodymium and erbium, or semiconductor fine particles exhibiting a nonlinear optical effect such as cadmium sulfide and copper chloride are suitable.
この混合液を常温付近に放置してゲル化させた後、徐々
に昇温しで脱水縮合させる。一定の温度に到達後昇温を
停市してその温度を維持しつつ、すでにゲル化した混合
物を透明ガラス化させる。This mixed solution is allowed to stand at around room temperature to gel, and then is gradually heated to undergo dehydration condensation. After reaching a certain temperature, the temperature increase is stopped and the already gelled mixture is turned into transparent glass while maintaining that temperature.
以上の過程を経て得られたバルクガラスをターゲツト材
にし、高周波スパッタリング方式を用いることによって
、任意の基板上に薄膜を形成させることができる。この
スパッタリング方式では、放電現象により活性化したイ
オンが前述のターゲツト材に衝突してターゲツト材の原
子が叩き出され、放電パワーに比例する膜付着速度で、
その原子が一個ずつ基板に付着し堆積していく。このた
め、形成される薄膜の厚さを、スパッタリング時間やス
パッタリング条件などにより制御することができる。By using the bulk glass obtained through the above process as a target material and using a high frequency sputtering method, a thin film can be formed on any substrate. In this sputtering method, ions activated by a discharge phenomenon collide with the aforementioned target material and atoms of the target material are knocked out, and the film deposition rate is proportional to the discharge power.
The atoms attach to the substrate one by one and are deposited. Therefore, the thickness of the formed thin film can be controlled by sputtering time, sputtering conditions, and the like.
ここで、実施した具体例について説明する。Here, a concrete example of the implementation will be explained.
ます、金属アルコキシドとしてシリコンアルコキシドを
2001用い、水200m1、エタノール400m1及
び0.1N7ンモ=7200mlを加えて30分間撹拌
する。次に、その混合液に添加する機能性無機材料とし
て、希土類化合物である塩化エルビウムを2g加えてさ
らに30分間撹拌する。First, 200ml of silicon alkoxide is used as the metal alkoxide, 200ml of water, 400ml of ethanol, and 7200ml of 0.1N7 are added and stirred for 30 minutes. Next, 2 g of erbium chloride, which is a rare earth compound, is added as a functional inorganic material to the mixed solution, and the mixture is further stirred for 30 minutes.
その後、この混合液をテフロン製容器に移し、アルミテ
ープで密封した後、35℃でゲル化させる。ゲル化した
後、さらに三日間で80”Cまで昇温し、アルミテープ
にIIIIlφの穴を数箇所あけて乾燥させる。約2週
間乾燥した後、昇温速度1℃/分で1200℃まで昇温
し、1時間保持することにより透明ガラス化させる。得
られたガラスは外径10c11.厚さ0.5cmの円盤
状である。Thereafter, this mixed solution is transferred to a Teflon container, sealed with aluminum tape, and then gelled at 35°C. After gelatinization, the temperature was raised to 80"C over three days, and several IIIlφ holes were made in the aluminum tape to dry it. After drying for about two weeks, the temperature was raised to 1200°C at a heating rate of 1°C/min. The glass is heated and held for 1 hour to form transparent glass.The resulting glass has a disk shape with an outer diameter of 10 cm and a thickness of 0.5 cm.
このガラス板をターゲツト材にし、基板としてシリカガ
ラスを用いて、高周波スパッタリング方式により薄膜化
した。その結果、厚さ5μ厳の膜が、クラック・はがれ
等の欠陥なく作製できた。Using this glass plate as a target material and using silica glass as a substrate, a thin film was formed by high frequency sputtering. As a result, a film with a thickness of approximately 5 μm was produced without defects such as cracks and peeling.
以上説明したように、本発明は、ゾルゲル法による機能
性ガラスの作製と、スパッタリング法による薄膜化技術
を組み合わせる事により、光学的機能に優れたガラス薄
膜の作製法を提供するもので、光学部品の材料に利用す
ると効果的である。As explained above, the present invention provides a method for producing a glass thin film with excellent optical functions by combining the production of functional glass using the sol-gel method and the thin film forming technology using the sputtering method, and provides a method for producing a glass thin film with excellent optical functions. It is effective when used as a material.
Claims (1)
ル基を表わす。)で示される金属アルコキシドに水、及
びアルコールを加えると共に、機能性無機材料を添加し
て混合液とし、該混合液を加水分解、及び脱水縮合させ
てバルクガラスを合成する第1のステップと、 前記バルクガラスをターゲットにスパッタリングするこ
とによって、基板上に該バルクガラスと同組成のガラス
薄膜を形成する第2のステップとを備えることを特徴と
する、ガラス薄膜の作製方法。 2、前記第1のステップにおける機能性無機材料は、レ
ーザ発振機能を有する希土類元素、あるいは非線形光学
効果を示す半導体微粒子であることを特徴とする請求項
1記載のガラス薄膜の作製方法。 3、前記第1のステップにおける金属アルコキシドの金
属が、シリコン、チタン、アルミニウム、ゲルマニウム
、ホウ素の少なくともいずれかであり、アルキル基がメ
チル基、エチル基、プロピル基、ブチル基の少なくとも
いずれかであるものを用いることを特徴とする請求項1
記載のガラス薄膜の作製方法。[Claims] 1. Water and alcohol are added to a metal alkoxide represented by the general formula M(OR)_4 (wherein M represents a metal and R represents an alkyl group), and a functional inorganic material is also added. a first step of synthesizing bulk glass by hydrolyzing and dehydrating and condensing the mixed liquid; and a second step of forming a glass thin film. 2. The method for producing a glass thin film according to claim 1, wherein the functional inorganic material in the first step is a rare earth element having a laser oscillation function or a semiconductor fine particle exhibiting a nonlinear optical effect. 3. The metal of the metal alkoxide in the first step is at least one of silicon, titanium, aluminum, germanium, and boron, and the alkyl group is at least one of a methyl group, an ethyl group, a propyl group, and a butyl group. Claim 1 characterized in that a product is used.
The method for producing the described glass thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16596590A JPH0455328A (en) | 1990-06-25 | 1990-06-25 | Production of glass thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16596590A JPH0455328A (en) | 1990-06-25 | 1990-06-25 | Production of glass thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0455328A true JPH0455328A (en) | 1992-02-24 |
Family
ID=15822377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16596590A Pending JPH0455328A (en) | 1990-06-25 | 1990-06-25 | Production of glass thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0455328A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000014013A1 (en) * | 1998-09-09 | 2000-03-16 | Novara Technology S.R.L. | Process for preparing silica or silica-based thick vitreous films according to the sol-gel technique and thick films thereby obtained |
-
1990
- 1990-06-25 JP JP16596590A patent/JPH0455328A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000014013A1 (en) * | 1998-09-09 | 2000-03-16 | Novara Technology S.R.L. | Process for preparing silica or silica-based thick vitreous films according to the sol-gel technique and thick films thereby obtained |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4278632A (en) | Method of conforming clear vitreous gal of silica-titania material | |
US5858280A (en) | Preparation of transparent methyl-modified silica gel | |
US5368887A (en) | Process for producing thin glass film by sol-gel method | |
US5091009A (en) | Coating composition and a process for manufacturing the same | |
US6852300B2 (en) | Process for preparing silica or silica-based thick vitreous films according to the sol-gel technique and thick films thereby obtained | |
US4851270A (en) | Inorganic-organic composite compositons exhibiting nonlinear optical response | |
US4861129A (en) | Inorganic-organic composite compositions exhibiting nonlinear optical response | |
JPH03199043A (en) | Antireflection film and forming method thereof | |
JPH0455328A (en) | Production of glass thin film | |
JP2005145795A (en) | Film-like organic and inorganic hybrid glassy material and method for manufacturing the same | |
US4898755A (en) | Inorganic-organic composite compositions exhibiting nonlinear optical response | |
JPH01185328A (en) | Matrix | |
JPH05805A (en) | Thin film formation by a sol-gel method | |
IE53173B1 (en) | Clear aluminium oxide solutions and glasses | |
JPS6058181B2 (en) | Glass thin film manufacturing method | |
JPH0755835B2 (en) | Method for producing silica glass | |
JPH08253318A (en) | Formation of transparent electroconductive material | |
JPS62226840A (en) | Reflection preventive film and its production | |
JPH0633014A (en) | Coating agent composition | |
JPH0570122A (en) | Production of thin film from transparent aluminum oxide precursor gel | |
JPS62265127A (en) | Production of silica glass | |
JPS63182222A (en) | Production of silica glass | |
JPH03285838A (en) | Manufacture of flaky glass | |
JPH0829949B2 (en) | Silica glass manufacturing method | |
JPS6317225A (en) | Production of silica glass |