JPH0453226A - Normal pressure cvd device - Google Patents
Normal pressure cvd deviceInfo
- Publication number
- JPH0453226A JPH0453226A JP16168290A JP16168290A JPH0453226A JP H0453226 A JPH0453226 A JP H0453226A JP 16168290 A JP16168290 A JP 16168290A JP 16168290 A JP16168290 A JP 16168290A JP H0453226 A JPH0453226 A JP H0453226A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- wafer
- reaction
- gas
- specimen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012495 reaction gas Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 239000003507 refrigerant Substances 0.000 abstract description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 chlorofluorocarbon ammonia Chemical compound 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程で用いられる常圧ＣＶＤ
装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to atmospheric pressure CVD used in the manufacturing process of semiconductor devices.
Regarding equipment.
〔従来の技術］１
従来の常圧ＣＶＤ装置は、試料を裏側から加熱し、試料
表面に２種卵以上の反応ガスをそれぞれ分離された吐出
口より吐出させることにより、試料表面に薄膜を形成す
るように構成されていた。[Prior art] 1. Conventional atmospheric pressure CVD equipment heats the sample from the back side and forms a thin film on the sample surface by discharging two or more reaction gases from separate discharge ports. It was structured like this.
」二連した従来の常圧ＣＶＤ装置は、試料を加熱する際
に、反応ガス供給部が同時に加熱される為、反応ガス供
給部の内部を冷却水等て冷却している。しかし、反応ガ
ス供給部より吐出された反応ガスが試料表面に達する前
に加熱されてしまうため、試料表面」１以外の気相中で
の反応が起き、パーティクルが発生したり、膜表面に荒
れが起き、歩留りが低下するという欠点がある。In a conventional double-connected atmospheric pressure CVD apparatus, the reaction gas supply section is heated at the same time when the sample is heated, so the inside of the reaction gas supply section is cooled with cooling water or the like. However, because the reaction gas discharged from the reaction gas supply section is heated before reaching the sample surface, reactions occur in the gas phase on surfaces other than the sample surface (1), generating particles and causing roughness on the film surface. This has the disadvantage of causing a decrease in yield.
本発明の常圧ＣＶＤ装置は、大気圧下において加熱され
た試料表面に少くとも２種類の反応ガスを反応させて試
料表面に成膜する常圧ＣＶ Ｉ）装置において、反応ガ
スの吐出口と試料表面との間に反応ガスを冷却するため
の冷却手段を設けたものである。The atmospheric pressure CVD apparatus of the present invention is an atmospheric pressure CVD apparatus that forms a film on the surface of a sample by reacting at least two types of reaction gases on the surface of a heated sample under atmospheric pressure. A cooling means for cooling the reaction gas is provided between the sample surface and the sample surface.
〔実施例」 次に、本発明について図面を参照して説明する。〔Example" Next, the present invention will be explained with reference to the drawings.
第１図及び第２図は本発明の一実施例の断面図及び平面
図であり、平面図は反応ガス供給部を除いた場合を示し
ている。FIGS. 1 and 2 are a sectional view and a plan view of an embodiment of the present invention, and the plan view shows the case where the reaction gas supply section is excluded.
第１図及び第２図において、ウェーハ］は試料台２に装
填され、加熱は試料台２の裏側のヒーター３により行わ
れる。尚、試料台２は試料台移動方向４に従い移動づる
構造になっている。成膜に寄与する反応ガスとしては、
反応ガス供給部らより、酸素ガス及び水素系ガス（例え
ば、Ｓｉ、Ｈ４゜ＰＨ３，Ｂ□ｆ（６或いはそれらの混
合ガス）か別々の吐出１」５Ａより吐出され、ウェーハ
］の表面に到達し成膜が行われる。本実施例では特に、
反応ガス供給部５のガスの吐出口５Ａとウェーハ１の表
面との間に、反応ガス冷却管６か設けられている。In FIGS. 1 and 2, a wafer is loaded onto a sample stage 2, and heating is performed by a heater 3 on the back side of the sample stage 2. Incidentally, the sample stage 2 is structured to move according to a sample stage moving direction 4. Reactive gases that contribute to film formation include:
From the reaction gas supply section, oxygen gas and hydrogen-based gas (for example, Si, H4゜PH3, B□f (6 or a mixture thereof) are discharged from separate discharges 1" 5A and reach the surface of the wafer). In this example, in particular,
A reaction gas cooling pipe 6 is provided between the gas discharge port 5A of the reaction gas supply section 5 and the surface of the wafer 1.
この反応ガス冷却管６の冷媒流入ロアを通して、冷媒流
出口８へ冷媒（例えは水或いはフロン アンモニア等の
液化ガス）を流すことにより、吐出された反応ガスは、
ウェーハ１表面に到達するまでに、ウェーハ加熱時の余
熱による加熱が緩和されるため、気相中ての反応は抑制
され、パーティクル等の発生は極めて少いものとなる。By flowing a refrigerant (for example, water or a liquefied gas such as chlorofluorocarbon ammonia) to the refrigerant outlet 8 through the refrigerant inflow lower of the reaction gas cooling pipe 6, the discharged reaction gas is
By the time it reaches the surface of the wafer 1, the heating due to residual heat during wafer heating is relaxed, so reactions in the gas phase are suppressed, and the generation of particles and the like is extremely small.
以」−説明したように本発明は、反応ガスの吐出口と試
料表面との間に、反応ガスが試料加熱の余熱により加熱
されるのを緩和するための冷却手段を設けることにより
、試料表面上以外の気相中での反応ガスの反応を抑える
ことができる。この結果、パーティクルの発生や膜の表
面荒れが抑えられるため歩留りは向」ニする。As described above, the present invention provides cooling means between the outlet of the reactive gas and the sample surface to reduce heating of the reactive gas due to residual heat from sample heating. Reactions of reactive gases in the gas phase other than those above can be suppressed. As a result, the production of particles and the surface roughness of the film are suppressed, which improves the yield.
第１図及び第２図は本発明の一実施例の断面図及び反応
ガス供給部を除いた平面図である。
１・・・ウェーハ、２・・・試料台、３・・・ヒーター
、４・・・試料台移動方向、５・・・反応ガス供給部、
５Ａ・・吐出口、６・・反応ガス冷却管、７・・・冷媒
流入口、８・・・冷媒流出口。FIGS. 1 and 2 are a cross-sectional view and a plan view of an embodiment of the present invention, excluding a reaction gas supply section. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Sample stand, 3... Heater, 4... Sample stand movement direction, 5... Reaction gas supply part,
5A...discharge port, 6...reactant gas cooling pipe, 7...refrigerant inlet, 8...refrigerant outlet.
Claims (1)
類の反応ガスを反応させて試料表面に成膜する常圧ＣＶ
Ｄ装置において、反応ガスの吐出口と試料表面との間に
反応ガスを冷却するための冷却手段を設けたことを特徴
とする常圧ＣＶＤ装置。Atmospheric pressure CV in which a film is formed on the sample surface by reacting at least two types of reactive gases on the sample surface heated under atmospheric pressure.
A normal pressure CVD apparatus in which a cooling means for cooling the reaction gas is provided between the reaction gas discharge port and the sample surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2161682A JP2647997B2 (en) | 1990-06-20 | 1990-06-20 | Atmospheric pressure CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2161682A JP2647997B2 (en) | 1990-06-20 | 1990-06-20 | Atmospheric pressure CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0453226A true JPH0453226A (en) | 1992-02-20 |
| JP2647997B2 JP2647997B2 (en) | 1997-08-27 |
Family
ID=15739845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2161682A Expired - Lifetime JP2647997B2 (en) | 1990-06-20 | 1990-06-20 | Atmospheric pressure CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2647997B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119919A (en) * | 1985-11-19 | 1987-06-01 | Nec Corp | Device for crystal growth of compound semiconductor |
-
1990
- 1990-06-20 JP JP2161682A patent/JP2647997B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62119919A (en) * | 1985-11-19 | 1987-06-01 | Nec Corp | Device for crystal growth of compound semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2647997B2 (en) | 1997-08-27 |
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