JPH045245B2 - - Google Patents
Info
- Publication number
- JPH045245B2 JPH045245B2 JP58100834A JP10083483A JPH045245B2 JP H045245 B2 JPH045245 B2 JP H045245B2 JP 58100834 A JP58100834 A JP 58100834A JP 10083483 A JP10083483 A JP 10083483A JP H045245 B2 JPH045245 B2 JP H045245B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic recording
- alloy thin
- recording medium
- atomic ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000531 Co alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229910001154 Pr alloy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
Landscapes
- Thin Magnetic Films (AREA)
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
本発明は磁気記録用媒体に関するものであり、
特に磁性薄膜からなる磁気記録用媒体に係るもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic recording medium,
In particular, it relates to a magnetic recording medium made of a magnetic thin film.
最近の磁気記録技術においては、記録密度のよ
り一層の高密度化が強く要求されている。高密度
記録を達成するために、記録用媒体には、磁性
膜がきわめて薄くできること、磁気特性が優れ
ること、特に保磁力Hcが大きいこと、、化学的
あるいは熱的に安定であること、などの特性が要
求される。 In recent magnetic recording technology, there is a strong demand for even higher recording densities. In order to achieve high-density recording, recording media must have extremely thin magnetic films, excellent magnetic properties, particularly high coercive force Hc, and chemical or thermal stability. characteristics are required.
従来、このような要求に対応する材料として、
γ−Fe2O3あるいはCo−γFe2O3などの鉄酸化物
材料が用いられてきた。しかし、従来の成膜技術
では、これら材料を用いた膜の厚さおよびHcの
値には限界があつた。 Traditionally, materials that meet these requirements include:
Iron oxide materials such as γ-Fe 2 O 3 or Co-γFe 2 O 3 have been used. However, with conventional film forming techniques, there are limits to the thickness and Hc value of films using these materials.
近年かかる問題点を改善するものとして、金属
薄膜による記録用媒体が開発研究されており、面
内磁気記録用媒体としてCo−Ｐ合金薄膜が、ま
た、垂直磁気記録用媒体としてCo−Cr合金薄膜
が検討されてきている。しかし、これら公知の金
属薄膜材料は、その製造方法が複雑であり高品質
のものが得にくいこと、その特性が必ずしも満足
するものではないこと、などの問題点がある。 In recent years, recording media made of metal thin films have been developed and researched to improve these problems, with Co-P alloy thin films used as longitudinal magnetic recording media and Co-Cr alloy thin films used as perpendicular magnetic recording media. is being considered. However, these known metal thin film materials have problems, such as that the manufacturing method is complicated, making it difficult to obtain high quality materials, and that their properties are not necessarily satisfactory.
例えば、Co−Cr合金薄膜ではキユリー温度が
低いこと、薄膜の結晶組織を詳細に検討すると必
ずしも均一な組織とならず組成の一部が析出して
いること、そしてこれがノイズの原因となるこ
と、および薄膜に亀裂が生じ易く不安定であるこ
と等の問題がある。 For example, in a Co-Cr alloy thin film, the Curie temperature is low, and when the crystal structure of the thin film is examined in detail, it is not necessarily a uniform structure, and a part of the composition precipitates, and this causes noise. Another problem is that the thin film tends to crack and is unstable.
これら合金薄膜の問題点を解決したものとし
て、昭和57年秋の応用磁気学会で提案されたPt
−Co合金薄膜がある。このPt−Co磁性薄膜はキ
ユリー温度が高いため熱安定性が良く、また酸化
し難く化学的な安定性も良く、さらには保磁力
Hcも比較的大きい、などの優れた特長がある。 As a solution to the problems of these alloy thin films, Pt
-There is a Co alloy thin film. This Pt-Co magnetic thin film has good thermal stability due to its high Curie temperature, is resistant to oxidation, has good chemical stability, and has a high coercivity.
It has excellent features such as relatively large Hc.
しかし、現在、当該技術分野で要求されている
程度の高密度記録を達成するためには、上記従来
のPt−Co合金薄膜の保磁力Hcの大きさの程度で
は必ずしも満足できるものではない。 However, in order to achieve the high-density recording currently required in this technical field, the magnitude of the coercive force Hc of the conventional Pt--Co alloy thin film is not necessarily satisfactory.
本発明は、上記従来技術の問題点を見直し、よ
り高密度記録に適した特性を有する新規な構成の
磁気記録用媒体を提供することを目的とするもの
である。 An object of the present invention is to review the above-mentioned problems of the prior art and provide a magnetic recording medium with a novel configuration that has characteristics more suitable for high-density recording.
上記目的を達成するために、本発明は、原子比
で、Pt4〜15％、Co77.0〜95.5％、Pr0.5〜８％か
らなる組成の合金薄膜を磁気記録用媒体として実
現したことを特徴とするものである。 In order to achieve the above object, the present invention has realized an alloy thin film having a composition of Pt4 to 15%, Co77.0 to 95.5%, and Pr 0.5 to 8% in atomic ratio as a magnetic recording medium. This is a characteristic feature.
すなわち、本発明は、公知のPt−Co系合金薄
膜において、Prを所定量添加することにより、
従来技術からは予測できない程度のHcの大幅な
改良をしたことを特長とするものである。 That is, in the present invention, by adding a predetermined amount of Pr to a known Pt-Co alloy thin film,
It is characterized by a significant improvement in Hc that could not be predicted from conventional technology.
以下、本発明を、比較例および実施例に基づい
て詳細に説明する。 Hereinafter, the present invention will be explained in detail based on comparative examples and examples.
比較例
原子比でPt9％、Co91％の組成のターゲツト材
料を使用し、Ar分圧20m Torr、基板温度290℃
の作成条件でスパツター法によりPt−Co合金薄
膜を作成した。得られた膜厚は3000Åであつた。
この薄膜の組成分析をした結果、原子比でPt9.3
％、Co90.7％であつた。Comparative example A target material with a composition of 9% Pt and 91% Co in atomic ratio was used, Ar partial pressure was 20 m Torr, and substrate temperature was 290°C.
A Pt-Co alloy thin film was created using the sputtering method under the following conditions. The obtained film thickness was 3000 Å.
As a result of compositional analysis of this thin film, the atomic ratio was Pt9.3.
%, Co90.7%.
また、その保磁力Hcは510Oe、4πMsの値は
13.1KGであつた。 Also, its coercive force Hc is 510Oe, and the value of 4πMs is
It was 13.1KG.
実施例 １
原子比で、Pt9％、Co91％である比較例と同じ
組成比のCo−Pt合金に種々の量のPrを加えたタ
ーゲツト材料を用いて、スパツター法によりCo
−Pt−Pr合金薄膜を製造した。製造条件は上記
比較例と同じである。得られた合金薄膜の膜厚は
約3000Åであつた。また、磁気特性を測定した結
果、その保磁力Hcは、Prを0.5％含むと
Hc560Oe、1.0％で570Oe、3.0％で590Oe、5.0％
で580Oe、8.0％で570Oeとなり10.0％含むとHcは
280Oeと急激に低下することがわかつた。したが
つて、Prの含有量は0.5〜８％の範囲とすること
が好ましい。Example 1 Using a target material in which various amounts of Pr were added to a Co-Pt alloy with the same atomic ratio as the comparative example (9% Pt, 91% Co), Co was deposited by sputtering.
- A Pt-Pr alloy thin film was produced. The manufacturing conditions were the same as in the above comparative example. The thickness of the obtained alloy thin film was about 3000 Å. In addition, as a result of measuring the magnetic properties, the coercive force Hc was found to be
Hc560Oe, 570Oe at 1.0%, 590Oe at 3.0%, 5.0%
580Oe at 8.0%, 570Oe at 8.0%, and when 10.0% is included, Hc is
It was found that the value decreased rapidly to 280 Oe. Therefore, the content of Pr is preferably in the range of 0.5 to 8%.
実施例 ２
実施例１と同様の製造条件として、Prを３％
一定としてPtおよびCoの比を変化させたターゲ
ツト材料を用い、スパツター法により合金薄膜を
作成してその特性を測定した。その結果、Ptの
含有量が、原子比で、３％でHc280Oe、４％で
420Oe、５％で510Oe、9.3％で560Oe、12％で
1280Oe、15％で1620Oeとなつた。Example 2 Same manufacturing conditions as Example 1, but with 3% Pr
Using target materials with a constant Pt and Co ratio, alloy thin films were prepared by sputtering and their properties were measured. As a result, the Pt content was found to be Hc280Oe at 3% and Hc280Oe at 4% in terms of atomic ratio.
420Oe, 510Oe at 5%, 560Oe at 9.3%, 12%
1280Oe, 15% became 1620Oe.
以上の結果からPt−Co薄膜にPrを添加するこ
とにより、保磁力Hcは大幅に改善されその含有
量は0.5原子％から８原子％が最もよく、また、
このPr含有量の範囲では、Pt含有量が４原子％
から15原子％の範囲で特に良い特性を示すことが
わかつた。 From the above results, by adding Pr to the Pt-Co thin film, the coercive force Hc is significantly improved, and the content is best between 0.5 at% and 8 at%.
In this Pr content range, the Pt content is 4 at%
It was found that particularly good characteristics were exhibited in the range of 15 at.
以上述べたことから明らかなように、本発明の
効果は、原子比で、Pt4〜15％、Co77.0〜95.5％、
Pr0.5〜８％の組成範囲が最も良い特性を示す。
さらにこの物質は化学的にも安定していることが
確認された。 As is clear from the above, the effects of the present invention are as follows: Pt4~15%, Co77.0~95.5%,
A composition range of 0.5 to 8% Pr shows the best properties.
Furthermore, it was confirmed that this substance is chemically stable.
Claims (1)
Pr0.5〜８％からなることを特徴とする磁気記録
用媒体。 ２ 特許請求の範囲第１項記載のものにおいて、
上記媒体がスパツター法を用いて作製された薄膜
状であることを特徴とする磁気記録用媒体。 ３ 特許請求の範囲第２項記載のものにおいて、
上記スパツター法を実施するに際し、原子比で、
Pt4〜15％、Co77.0〜95.5％、Pr0.5〜８％の組成
からなるターゲツト材料を用いたことを特徴とす
る磁気記録用媒体。[Claims] 1. In terms of atomic ratio, Pt4 to 15%, Co77.0 to 95.5%,
A magnetic recording medium comprising 0.5 to 8% Pr. 2. In what is stated in claim 1,
A magnetic recording medium characterized in that the medium is in the form of a thin film produced using a sputtering method. 3 In what is stated in claim 2,
When carrying out the above sputtering method, in terms of atomic ratio,
A magnetic recording medium characterized in that a target material having a composition of 4 to 15% Pt, 77.0 to 95.5% Co, and 0.5 to 8% Pr is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100834A JPS59227106A (en) | 1983-06-08 | 1983-06-08 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58100834A JPS59227106A (en) | 1983-06-08 | 1983-06-08 | Magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227106A JPS59227106A (en) | 1984-12-20 |
| JPH045245B2 true JPH045245B2 (en) | 1992-01-30 |
Family
ID=14284340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58100834A Granted JPS59227106A (en) | 1983-06-08 | 1983-06-08 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59227106A (en) |
-
1983
- 1983-06-08 JP JP58100834A patent/JPS59227106A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59227106A (en) | 1984-12-20 |
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