JPH045131B2 - - Google Patents
Info
- Publication number
- JPH045131B2 JPH045131B2 JP9387984A JP9387984A JPH045131B2 JP H045131 B2 JPH045131 B2 JP H045131B2 JP 9387984 A JP9387984 A JP 9387984A JP 9387984 A JP9387984 A JP 9387984A JP H045131 B2 JPH045131 B2 JP H045131B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- diaphragm
- pressure side
- low
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000007789 sealing Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、プロセス変量である２点間の圧力差
を測定する差圧発信器に関し、特に過大圧力によ
る半導体圧力センサの損傷、破壊を防止し得るよ
うにしたものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a differential pressure transmitter that measures the pressure difference between two points, which is a process variable, and in particular, to a differential pressure transmitter that measures a pressure difference between two points, which is a process variable. It was designed to be obtained.
この種の差圧発信器に使用される半導体圧力セ
ンサは、拡散技術によつて拡散抵抗パターンが形
成された面と反対側の面と周縁部分と中心部分が
肉厚に形成された単結晶のシリコンダイヤフラム
と、このシリコンダイヤフラムの周縁部分を支持
する支持体とで構成されている。そして、この半
導体圧力センサの一方の面、すなわち抵抗が形成
された表面に高圧流体の圧力が高圧側バリアダイ
ヤフラムと高圧側内封液を介して加えられ、また
他方の面、すなわち内側面に低圧流体の圧力が低
圧側バリアダイヤフラムと低圧側内封液を介して
加えられる。この結果、高圧流体と低圧流体の差
の圧力がシリコンダイヤフラムを歪ませ、この歪
みが抵抗によつて電気信号に変換され外部に取り
出される。なお、差圧発信器のボデイ本体内には
一般に半導体圧力センサの過負荷保護のためのセ
ンターダイヤフラムが設けられている。
The semiconductor pressure sensor used in this type of differential pressure transmitter is a single crystal whose surface opposite to the surface on which the diffusion resistance pattern is formed using diffusion technology, the peripheral portion, and the center portion are thick. It consists of a silicon diaphragm and a support that supports the peripheral edge of the silicon diaphragm. The pressure of high-pressure fluid is applied to one surface of this semiconductor pressure sensor, that is, the surface on which the resistance is formed, via the high-pressure side barrier diaphragm and the high-pressure side internal sealing liquid, and the low pressure is applied to the other surface, that is, the inner surface. Fluid pressure is applied via the low pressure side barrier diaphragm and the low pressure side internal sealing liquid. As a result, the pressure difference between the high pressure fluid and the low pressure fluid distorts the silicon diaphragm, and this distortion is converted into an electrical signal by the resistance and taken out to the outside. Note that a center diaphragm is generally provided within the body of the differential pressure transmitter to protect the semiconductor pressure sensor from overload.
ところで、半導体圧力センサは一般にシリコン
ダイヤフラムの一方の面の中央部に抵抗が形成さ
れ、他方の面の中央部を化学エツチングあるいは
電解エツチングすることにより製造されるため、
エツチングされた面に作用する圧力に対する強度
と抵抗が形成された面に作用する圧力に対する強
度とが異なり、エツチングされた面に対する破壊
臨界圧が小さくなる。このため、従来の差圧発信
器においては、半導体圧力センサを保護するため
にシリコンダイヤフラムの強度が小さな面に対す
る破壊臨界圧の応じてセンターダイヤフラムの剛
性を設定するようにしている。 By the way, semiconductor pressure sensors are generally manufactured by forming a resistor in the center of one surface of a silicon diaphragm and chemically etching or electrolytically etching the center of the other surface.
The strength against the pressure acting on the etched surface is different from the strength against the pressure acting on the resistive surface, and the critical pressure for fracture against the etched surface becomes smaller. For this reason, in conventional differential pressure transmitters, in order to protect the semiconductor pressure sensor, the rigidity of the center diaphragm is set according to the breaking critical pressure for the weaker surface of the silicon diaphragm.
しかしながら、このようにセンターダイヤフラ
ムの剛性を設定すると、高圧側から作用する圧力
に対して容易に弾性変形することになり、その結
果測定レンジを大きくすることができないという
不具合が生ずる。一方、大きな測定レンジを得る
ためにセンターダイヤフラムの剛性を大きくする
と低圧側から作用する力によつて半導体圧力セン
サが破壊されることになる。 However, if the rigidity of the center diaphragm is set in this way, it will easily elastically deform in response to pressure applied from the high pressure side, resulting in a problem that the measurement range cannot be increased. On the other hand, if the rigidity of the center diaphragm is increased in order to obtain a larger measurement range, the semiconductor pressure sensor will be destroyed by the force acting from the low pressure side.
本発明はこのような事情に鑑みてなされたもの
で、ボデイ本体内に形成されセンターダイヤフラ
ムによつて仕切られた２つの内室のうち半導体圧
力センサの低圧側に連通する低圧側内室のセンタ
ーダイヤフラムと対向する波形面の中央に前記セ
ンターダイヤフラムに当接する過圧保護用突起を
設け、該ダイヤフラムの剛性を前記半導体圧力セ
ンサの各面に対する破壊臨界圧に応じて異ならせ
るという極めて簡単な構成により、半導体圧力セ
ンサの損傷、破壊を防止し得るようにした差圧発
信器を提供するものである。
The present invention has been made in view of the above circumstances, and includes a center diaphragm of a low-pressure side inner chamber that communicates with the low-pressure side of a semiconductor pressure sensor among two inner chambers formed within a body main body and partitioned by a center diaphragm. An extremely simple structure in which an overpressure protection protrusion that contacts the center diaphragm is provided at the center of the corrugated surface facing the diaphragm, and the rigidity of the diaphragm is varied depending on the critical pressure for failure on each surface of the semiconductor pressure sensor. The present invention provides a differential pressure transmitter that can prevent damage and destruction of a semiconductor pressure sensor.
以下、本発明を図面に示す実施例に基づいて詳
細に説明する。 Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第１図は本発明に係る差圧発信器の一実施例を
示す断面図である。同図において、１はボデイ本
体で、このボデイ本体１は２個のブロツク１Ａ，
１Ｂによつて構成され、これらは例えばステンレ
ス鋼で作られている。前記ボデイ本体１の両側
面、すなわち受圧側面２，３にはそれぞれ波形円
板状に形成されて可撓性を有する高圧側のバリア
ダイヤフラム４と、低圧側のバリアダイヤフラム
とがその周縁部を溶接されて配設されている。前
記各受圧側面２，３はそれぞれバリアダイヤフラ
ム４，５と同形の波形に形成されている。また受
圧側面２と高圧側バリアダイヤフラム４および受
圧側面３と低圧側バリアダイヤフラム５との間に
はそれぞれ適宜な間隔で設けられ、この間隔によ
つて裏側室６，７をそれぞれ形成している。そし
て、各バリアダイヤフラム４，５の外表面にはオ
リフイス上流側の高圧PHと、オリフイス下流側
の低圧PLがそれぞれ印加されている。
FIG. 1 is a sectional view showing an embodiment of a differential pressure transmitter according to the present invention. In the figure, 1 is a main body, and this main body 1 has two blocks 1A,
1B and are made of stainless steel, for example. On both sides of the body main body 1, that is, the pressure receiving sides 2 and 3, a flexible barrier diaphragm 4 on the high-pressure side and a barrier diaphragm on the low-pressure side are formed in the shape of a corrugated disc and have their peripheral edges welded. It has been arranged. Each of the pressure-receiving side surfaces 2 and 3 is formed in the same waveform as the barrier diaphragm 4 and 5, respectively. Appropriate intervals are provided between the pressure receiving side surface 2 and the high pressure side barrier diaphragm 4 and between the pressure receiving side surface 3 and the low pressure side barrier diaphragm 5, respectively, and back chambers 6 and 7 are respectively formed by this spacing. A high pressure P H on the upstream side of the orifice and a low pressure P L on the downstream side of the orifice are applied to the outer surface of each barrier diaphragm 4 and 5, respectively.
前記ボデイ本体１の中央接合部には内室８が形
成されており、この内室８はセンターダイヤフラ
ム９によつて高圧側内圧８ａと低圧内室８ｂとに
仕切られている。高圧側内室８ａと高圧側裏側室
６とは連絡路１０によつて連通され、同様に低圧
側圧内室８ｂと低圧側裏側室７とは連通路１１に
よつて連通されている。前記センターダイヤフラ
ム９は中央部と周縁部がフラツトで、その中間が
波形に形成され、周縁部が前記ボデイ本体１に溶
接されている。そして、前記ボデイ本体１の、前
記センターダイヤフラム９と共に前記各内室８
ａ，８ｂをそれぞれ形成する面も、前記センター
ダイヤフラム９と同形の波形面１９ａ，１９ｂに
形成され、かつ低圧側内室８ｂを形成する波形面
１９ｂの中央には本発明を特徴づける過圧保護用
突起１２が一体に突設され、その先端面が前記セ
ンターダイヤフラム９の中央に接触している。 An inner chamber 8 is formed in the central joint portion of the body main body 1, and this inner chamber 8 is partitioned by a center diaphragm 9 into a high-pressure side internal pressure 8a and a low-pressure inner chamber 8b. The high-pressure side inner chamber 8a and the high-pressure side back chamber 6 communicate with each other through a communication passage 10, and similarly, the low-pressure side inner chamber 8b and the low-pressure side back chamber 7 communicate with each other through a communication passage 11. The center diaphragm 9 has a flat central portion and a peripheral portion, a corrugated portion in the middle thereof, and a peripheral portion welded to the main body 1. Each of the inner chambers 8 of the body main body 1 together with the center diaphragm 9
The surfaces forming the diaphragms a and 8b are also formed into waveform surfaces 19a and 19b having the same shape as the center diaphragm 9, and the center of the waveform surface 19b forming the low pressure side interior chamber 8b is provided with an overpressure protection characteristic of the present invention. A projection 12 is integrally provided, and its tip surface is in contact with the center of the center diaphragm 9.
前記ボデイ本体１の外周面にはセンサ部１３が
一体的に設けられている。このセンサ部１３は前
記ボデイ本体１に溶接された連結金具１４と、こ
の連結金具１４に溶接されたシール金具１５とを
備え、前記シール金具１５の内部に半導体圧力セ
ンサ１６が収納配置されている。この半導体圧力
センサ１６は従来周知のもので表面中央部に抵抗
が形成された内側面の周縁部と中央部分が肉厚に
形成されたカツプ状のシリコンダイヤフラム１６
ａと、このシリコンダイヤフラム１６ａを支持す
る支持体１６ｂとで構成されている。この場合支
持体１６ｂはシリコンダイヤフラム１６ａと熱膨
張係数がほぼ等しく、かつヤング率もほぼ等しい
材料で製作されている。そして、前記半導体圧力
センサ１６は前記ボデイ本体１内に形成された２
つの封入回路１７，１８を仕切る如く配設される
もので、高圧側の封入回路１７の一端が高圧側内
室８ａに連通され、他端が前記連結金具１４に形
成された一方の連通路２０に連通されることによ
り前記シリコンダイヤフラム１６ａの表面側に高
圧PHが与えられている。一方、低圧側封入回路
１８の一端が低圧側内室８ｂに連通され、他端が
前記連結金具１４に形成された他の導通路２１に
連通されることにより、前記シリコンダイヤフラ
ム１６ａの内側面に低圧PLが与えられている。 A sensor section 13 is integrally provided on the outer peripheral surface of the body main body 1. The sensor section 13 includes a connecting metal fitting 14 welded to the body main body 1 and a sealing metal fitting 15 welded to the connecting metal fitting 14, and a semiconductor pressure sensor 16 is housed inside the sealing metal fitting 15. . This semiconductor pressure sensor 16 is a conventionally well-known device, and is a cup-shaped silicon diaphragm 16 with a resistor formed in the center of the surface and thickened at the periphery and center of the inner surface.
a, and a support body 16b that supports this silicon diaphragm 16a. In this case, the support body 16b is made of a material that has approximately the same thermal expansion coefficient as the silicon diaphragm 16a and also has approximately the same Young's modulus. The semiconductor pressure sensor 16 is formed within the main body 1.
One end of the high-pressure side sealed circuit 17 is communicated with the high-pressure side inner chamber 8a, and the other end is connected to one communication path 20 formed in the connecting fitting 14. A high pressure P H is applied to the surface side of the silicon diaphragm 16a by communicating with the silicon diaphragm 16a. On the other hand, one end of the low-pressure side sealed circuit 18 is communicated with the low-pressure side inner chamber 8b, and the other end is communicated with another conduction path 21 formed in the connecting fitting 14, so that the inner surface of the silicon diaphragm 16a A low pressure P L is applied.
前記各裏側室６，７から連通路１０，１１、内
室８ａ，８ｂ、封入回路１７，１８、導通路２
０，２１を経て半導体圧力センサ１６の高圧側と
低圧側とに至る間にはシリコンオイル等の内封液
２３がそれぞれ封入されている。なお、２４ａ，
２４ｂは液封孔、２５はボール、２６はねじであ
る。 From each of the back chambers 6, 7 to communication paths 10, 11, inner chambers 8a, 8b, sealed circuits 17, 18, conduction path 2
An internal sealing liquid 23 such as silicone oil is filled between the high pressure side and the low pressure side of the semiconductor pressure sensor 16 via the pressure sensors 0 and 21, respectively. In addition, 24a,
24b is a liquid seal hole, 25 is a ball, and 26 is a screw.
このように構成された差圧発信器においては、
高圧側から圧力が作用した場合、センターダイヤ
フラム９はその中央部が過圧保護用突起１２に当
接しているため移動することができず、波形部分
が圧力に比例して弾性変形し、高圧側裏側室６内
に内封液２３が高圧側内室８ａに移動し、高圧側
バリアダイヤフラム４に作用する圧力が内封液２
３によつて半導体圧力センサ１６に伝達される。
一方、低圧側から圧力が作用した場合、センター
ダイヤフラム９は周辺固定の円板を構成するため
この時の圧力に比例して高圧側に移動し、低圧側
裏側室７内の内封液２３が低圧側内室８ｂに移動
し、低圧側バリアダイヤフラム５に作用する圧力
が内封液２３によつて半導体圧力センサ１６に伝
達される。その結果、高圧側と低圧側との圧力差
に応じて半導体圧力センサ１６のシリコンダイヤ
フラム１６ａがひずみ、このひずみ量が抵抗によ
つて電気的に取り出され、差圧の測定が行われ
る。 In the differential pressure transmitter configured in this way,
When pressure is applied from the high pressure side, the center diaphragm 9 cannot move because its center is in contact with the overpressure protection protrusion 12, and the corrugated portion elastically deforms in proportion to the pressure, causing the center diaphragm 9 to The inner sealing liquid 23 in the back chamber 6 moves to the high pressure side inner chamber 8a, and the pressure acting on the high pressure side barrier diaphragm 4 increases to the inner sealing liquid 2.
3 to the semiconductor pressure sensor 16.
On the other hand, when pressure is applied from the low-pressure side, the center diaphragm 9 constitutes a circular disk whose periphery is fixed, so it moves to the high-pressure side in proportion to the pressure at this time, and the internal liquid 23 in the back chamber 7 on the low-pressure side The pressure that moves to the low-pressure side internal chamber 8b and acts on the low-pressure side barrier diaphragm 5 is transmitted to the semiconductor pressure sensor 16 by the internal sealing liquid 23. As a result, the silicon diaphragm 16a of the semiconductor pressure sensor 16 is strained in accordance with the pressure difference between the high-pressure side and the low-pressure side, and the amount of this strain is electrically extracted by the resistor to measure the pressure difference.
ここで、上述したような半導体圧力センサ１６
を保護する過圧保護機構の動作する圧力Ｐは次式
によつて示される。 Here, the semiconductor pressure sensor 16 as described above is
The pressure P at which the overpressure protection mechanism operates is given by the following equation.
Ｐ＝V0／Φ
但し、
V0：バリアダイヤフラム下封入液量
Φ：（体積変化／圧力）係数（コンブライアンス）
センターダイヤフラム９は高圧側から圧力を受
けた場合と低圧側から圧力を受けた場合とでは弾
性変形可能な部分の表面積が異なつているため、
高圧側から作用する圧力に対しては、低圧側から
作用する圧力に対してよりも大きな剛性を有する
ことになる。このため、センターダイヤフラム９
のコンプライアンスΦは高圧側から圧力が加わつ
た場合と、低圧側から圧力が加わつた場合とでは
大きく異なり、過圧保護が働く圧力も大きく違え
ることが可能となる。 P=V 0 /Φ However, V 0 : Amount of liquid sealed under the barrier diaphragm Φ : (Volume change/pressure) coefficient (convergence) The center diaphragm 9 receives pressure from the high pressure side and from the low pressure side. Since the surface area of the elastically deformable part is different depending on the case,
It has greater rigidity against pressure acting from the high pressure side than against pressure acting from the low pressure side. For this reason, the center diaphragm 9
The compliance Φ differs greatly between when pressure is applied from the high pressure side and when pressure is applied from the low pressure side, and the pressure at which overpressure protection works can also vary greatly.
第２図は高圧側を正側とし低圧側を負側とし、
半導体圧力センサ１６に伝達される圧力Psと内
封液２３の移動量Ｖとの関係を示す図で、高圧側
の圧力に対しては圧力P1において内封液２３が
高圧側内封液量V0だけ移動し、バリアダイヤフ
ラム４が受圧側面２に接触して半導体圧力センサ
１６の過圧保護が行われる。これと同様に低圧側
からの圧力に対しては前記圧力P1より小さな圧
力P2でバリアダイヤフラム５が受圧側面３に接
触することになる。その結果、第３図に半導体圧
力センサ１６に伝達される圧力Psと差圧発信器
に作用する差圧Ｐとの関係を、高圧側を正側、低
圧側を負側として示すようにP1以上あるいはP2
以下の差圧が半導体圧力センサ１６に伝達される
のが防止される。 In Figure 2, the high pressure side is the positive side and the low pressure side is the negative side.
This is a diagram showing the relationship between the pressure Ps transmitted to the semiconductor pressure sensor 16 and the amount of movement V of the internal sealing liquid 23. For pressure on the high pressure side, at pressure P 1 , the internal liquid 23 changes to the high pressure side internal liquid volume. The barrier diaphragm 4 is moved by V 0 and comes into contact with the pressure-receiving side surface 2 to protect the semiconductor pressure sensor 16 from overpressure. Similarly, in response to pressure from the low pressure side, the barrier diaphragm 5 comes into contact with the pressure receiving side surface 3 at a pressure P2 smaller than the pressure P1 . As a result, the relationship between the pressure Ps transmitted to the semiconductor pressure sensor 16 and the differential pressure P acting on the differential pressure transmitter is shown in FIG. 3 with the high pressure side being the positive side and the low pressure side being the negative side. or above or P 2
The following differential pressures are prevented from being transmitted to the semiconductor pressure sensor 16:
これはとりもなおさず低圧側内室８ｂに設けた
過圧保護用突起１２をセンターダイヤフラム１２
に当接されることにより、該センターダイヤフラ
ム１２が破壊臨界圧の大きな半導体圧力センサ１
６の上側に連通された高圧側に作用する圧力に対
しては大きな剛性を有し、破壊臨界圧の小さな半
導体圧力センサ１６の下側に連通された低圧側に
対しては小さな剛性を有することによるもので、
そのため半導体圧力センサ１６の高圧側には大き
な圧力を作用させることができると共に、破壊臨
界圧が小さい低圧側に対しては大きな圧力が伝達
されのを防止し、半導体圧力センサ１６を過圧保
護することができる。 This means that the overpressure protection protrusion 12 provided in the low pressure side inner chamber 8b is connected to the center diaphragm 12.
When the center diaphragm 12 comes into contact with the semiconductor pressure sensor 1 having a large critical pressure for breaking
It has a large rigidity against the pressure acting on the high pressure side communicated with the upper side of the semiconductor pressure sensor 16, and has a small rigidity against the low pressure side communicated with the lower side of the semiconductor pressure sensor 16, which has a small critical pressure for failure. Due to
Therefore, a large pressure can be applied to the high pressure side of the semiconductor pressure sensor 16, and large pressure is prevented from being transmitted to the low pressure side where the critical pressure for breakdown is small, thereby protecting the semiconductor pressure sensor 16 from overpressure. be able to.
なお、過圧保護用突起１２のセンターダイヤフ
ラム９に接触する先端面の面積は、半導体圧力セ
ンサ１６のシリコンダイヤフラム１６ａの各面の
破壊臨界圧に応じて設定される。 Note that the area of the tip surface of the overpressure protection protrusion 12 that contacts the center diaphragm 9 is set in accordance with the breaking critical pressure of each surface of the silicon diaphragm 16a of the semiconductor pressure sensor 16.
以上説明したように本発明に係る差圧発信器に
よれば、ボデイ本体内に形成された内室をセンタ
ーダイヤフラムによつて半導体圧力センサの高圧
側の面に連通される高圧側内室と、低圧側の面に
連通される低圧側内室とに画成し、この低圧側内
室のセンターダイヤフラムと対向する波形面の中
央部に前記センターダイヤフラムに接触する過圧
保護用突起を設けて構成したので、センターダイ
ヤフラムは前記各内室に作用する圧力に対して異
なつた剛性を有することになり、半導体圧力セン
サの破壊臨界圧が大きい高圧側の面には大きな圧
力を作用させることができると共に破壊臨界圧が
小さな低圧側の面には大きな圧力が作用するのを
防止することができる。したがつて、センターダ
イヤフラムの剛性が破壊臨界圧の小さい面に対応
して設定された従来の差圧発信器に比べて測定レ
ンジを大きくすることができ、しかも半導体圧力
センサの損傷、破壊を防止できるという効果があ
る。
As explained above, according to the differential pressure transmitter according to the present invention, the inner chamber formed in the body main body is connected to the high pressure side surface of the semiconductor pressure sensor through the center diaphragm; A low pressure side inner chamber communicating with the low pressure side surface, and an overpressure protection protrusion that contacts the center diaphragm is provided at the center of the corrugated surface facing the center diaphragm of the low pressure side inner chamber. Therefore, the center diaphragm has different rigidities with respect to the pressure acting on each of the internal chambers, and a large pressure can be applied to the high-pressure side surface where the breakdown critical pressure of the semiconductor pressure sensor is large. It is possible to prevent large pressure from acting on the low pressure side surface where the critical pressure for failure is small. Therefore, the measurement range can be increased compared to conventional differential pressure transmitters whose center diaphragm's rigidity is set to correspond to a surface with a small critical pressure for failure, and it also prevents damage or destruction of the semiconductor pressure sensor. There is an effect that it can be done.
第１図は本発明に係る差圧発信器の一実施例を
示す断面図、第２図は半導体圧力センサに伝達さ
れる圧力Psと内封液の移動量Ｖとの関係を示す
図、第３図は半導体圧力センサに伝達される圧力
Psと差圧発信器に作用する差圧Ｐとの関係を示
す図である。
１……ボデイ本体、２，３……受圧側面、４，
５……バリアダイヤフラム、６，７……裏側室、
８……内室、８ａ……高圧側内室、８ｂ……低圧
側内室、９……センターダイヤフラム、１０，１
１……連通路、１２……過圧保護用突起、１６…
…半導体圧力センサ、１６ａ……シリコンダイヤ
フラム、１７，１８……封入回路、１９ａ，１９
ｂ……波形面、２３……内封液。
FIG. 1 is a sectional view showing an embodiment of a differential pressure transmitter according to the present invention, FIG. Figure 3 shows the pressure transmitted to the semiconductor pressure sensor.
It is a figure showing the relationship between Ps and differential pressure P acting on a differential pressure transmitter. 1...Body main body, 2, 3...Pressure receiving side, 4,
5...Barrier diaphragm, 6,7...Back chamber,
8...Inner chamber, 8a...High pressure side inner chamber, 8b...Low pressure side inner chamber, 9...Center diaphragm, 10,1
1... Communication path, 12... Overpressure protection protrusion, 16...
...Semiconductor pressure sensor, 16a...Silicon diaphragm, 17, 18...Enclosed circuit, 19a, 19
b...Corrugated surface, 23...Inner sealing liquid.
Claims (1)
され内部に内封液を封入してなるボデイ本体と、
このボデイ本体内に設けられセンターダイヤフラ
ムによつて画成された高圧側内室および低圧側内
室と、前記各バリアダイヤフラムとボデイ側面と
の間に形成された裏側室と前記各内室とをそれぞ
れ連通させる２つの連通路と、一端がそれぞれ前
記各内室に連通する２つの封入回路と、これら２
つの封入回路を仕切る如く配設された半導体圧力
センサとを具備してなり、前記半導体圧力センサ
の低圧側の面に連通し前記センターダイヤフラム
と共に前記低圧側内室を形成する波形面の中央部
に前記センターダイヤフラムに当接する過圧保護
用突起を設けたことを特徴とする差圧発信器。1. A main body with barrier diaphragms arranged on both sides and a liquid sealed inside;
A high-pressure side internal chamber and a low-pressure side internal chamber provided in this body main body and defined by a center diaphragm, and a back side chamber and each of the above-mentioned internal chambers formed between each of the barrier diaphragms and the side surface of the body. two communication passages that communicate with each other; two enclosed circuits that have one end communicating with each of the internal chambers;
a semiconductor pressure sensor disposed so as to partition two sealed circuits, the semiconductor pressure sensor having a central portion of a corrugated surface that communicates with the low pressure side surface of the semiconductor pressure sensor and forms the low pressure side interior chamber together with the center diaphragm. A differential pressure transmitter, characterized in that an overpressure protection protrusion that comes into contact with the center diaphragm is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9387984A JPS60238732A (en) | 1984-05-12 | 1984-05-12 | Differential pressure transmitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9387984A JPS60238732A (en) | 1984-05-12 | 1984-05-12 | Differential pressure transmitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60238732A JPS60238732A (en) | 1985-11-27 |
| JPH045131B2 true JPH045131B2 (en) | 1992-01-30 |
Family
ID=14094758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9387984A Granted JPS60238732A (en) | 1984-05-12 | 1984-05-12 | Differential pressure transmitter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60238732A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2544435B2 (en) * | 1988-04-06 | 1996-10-16 | 株式会社日立製作所 | Multi-function sensor |
-
1984
- 1984-05-12 JP JP9387984A patent/JPS60238732A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60238732A (en) | 1985-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4572000A (en) | Pressure sensor with a substantially flat overpressure stop for the measuring diaphragm | |
| US6330829B1 (en) | Oil-filled pressure transducer | |
| EP0164413B2 (en) | Pressure transducer | |
| US6595066B1 (en) | Stopped leadless differential sensor | |
| US4574640A (en) | Integrated dual-range pressure transducer | |
| JP2843667B2 (en) | Semiconductor pressure sensor | |
| US4852408A (en) | Stop for integrated circuit diaphragm | |
| WO1992017757A1 (en) | Differential pressure device | |
| CA1193464A (en) | Semiconductor pressure transducer | |
| JPH045131B2 (en) | ||
| JPS59145940A (en) | Differential pressure and pressure transmitting device | |
| JP3105087B2 (en) | Differential pressure detector | |
| JP2988077B2 (en) | Differential pressure measuring device | |
| JPH11132887A (en) | Pressure sensor | |
| JPH0436425Y2 (en) | ||
| JPH0331212B2 (en) | ||
| JPH081468Y2 (en) | Differential pressure measuring device | |
| JPH0894474A (en) | Pressure measuring apparatus | |
| JP2643906B2 (en) | Pressure sensor | |
| JP2002340718A (en) | Pressure gage | |
| JPH05187948A (en) | Measuring device of differential pressure | |
| JPH0259451U (en) | ||
| JPS58211619A (en) | Semiconductor pressure difference detector | |
| JPH04301731A (en) | Semiconductor pressure sensor | |
| JPH05172676A (en) | Differential pressure measuring device |