JPH0451172B2 - - Google Patents
Info
- Publication number
- JPH0451172B2 JPH0451172B2 JP57204053A JP20405382A JPH0451172B2 JP H0451172 B2 JPH0451172 B2 JP H0451172B2 JP 57204053 A JP57204053 A JP 57204053A JP 20405382 A JP20405382 A JP 20405382A JP H0451172 B2 JPH0451172 B2 JP H0451172B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- sensitive element
- array
- element array
- slit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 claims description 77
- 230000035945 sensitivity Effects 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 238000001514 detection method Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000002591 computed tomography Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- -1 silver halide Chemical class 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009532 heart rate measurement Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は被検査体の検査に用いる放射線受像装
置にかかわる。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a radiation image receiving apparatus used for inspecting an object to be inspected.
従来例の構成とその問題点
従来、Ｘ線等の放射線撮像には、銀塩フイル
ム、イメージインテンフアイヤー等が用いられて
きたが、画像の高品質化のため種々の新しい方法
が試みられている。Conventional configurations and their problems Conventionally, silver halide films, image intensifiers, etc. have been used for radiation imaging such as X-rays, but various new methods have been tried to improve the quality of images. There is.
熱ルミネツセンスフイルムによる方法（特公昭
55−47720号公報）、輝度ルミネツセンスフイルム
による方法（特開昭55−15025号公報）がこれで
あり、その高感度性と広いダイナミツクレンジが
期待されているが、反面即時性に欠けるという問
題も有している。 Method using thermoluminescent film (Tokukosho
55-47720) and a method using a bright luminescence film (Japanese Patent Laid-Open No. 55-15025), which is expected to have high sensitivity and a wide dynamic range, but on the other hand, it lacks immediacy. There is also a problem.
また、スカウトビユアシステムと称して、コン
ピユータートモグラフイ（CT）装置の放射線検
出器アレイを利用し、被写体をこの線アレイの直
角方向に送り、被写体の２次元画像を得る方法が
あり、GE社よりCT／Ｔ Scout View System
として製造販売されている。これは、放射線検出
器アレイとして511チヤンネルのキセノンガス検
出器が用いられており、放射線強度に対応した電
荷量を読み取つて画像を得るという方法である
が、検出器の感度が不充分であるため、被写体の
被ばく放射線量が大きく、また、小型化すればさ
らに感度が落ちるために解像度を上げることがで
きなかつた。 In addition, there is a method called the Scout View System that uses a radiation detector array of a computer tomography (CT) device and sends the subject in a direction perpendicular to this line array to obtain a two-dimensional image of the subject. More CT/T Scout View System
Manufactured and sold as. This method uses a 511-channel xenon gas detector as a radiation detector array, and obtains an image by reading the amount of charge that corresponds to the radiation intensity, but the sensitivity of the detector is insufficient. However, it was not possible to increase the resolution because the radiation dose to which the subject was exposed was large, and if the camera was made smaller, the sensitivity would drop even further.
発明の目的
本発明は、このような従来の欠点を除去し、高
感度、高解像度でかつ即時性のある新しい放射線
受像装置を提供するものである。OBJECTS OF THE INVENTION The present invention eliminates these conventional drawbacks and provides a new radiation image receiving device that has high sensitivity, high resolution, and instantaneous operation.
発明の構成
本発明の放射線受像装置は半導体検出素子を１
列に配置してアレイを形成し、放射線源より扇状
に放射されて被写体を透過した放射線をこのアレ
イに入射せしめて、アレイ中の各素子同時に放射
線信号を読みとるようにする。読みとりは放射線
量子を１個のパルスに変換し、増巾・カウントす
るというパルス計数法による。各素子に対応して
パルス増巾器、カウンター回路を並列に設け、ア
レイに入射した放射線量を同時計数する。各素子
は、一定時間のパルスを計数してメモリに送り、
また次の位置で同じ計数を行なう。素子アレイ
は、被写体に沿つて連続的または段階的に送られ
る。このようにして、２次元の放射線画像信号を
得ることができる。Structure of the Invention The radiation image receiving device of the present invention includes one semiconductor detection element.
The elements are arranged in rows to form an array, and the radiation emitted from the radiation source in a fan shape and transmitted through the object is made incident on this array, so that each element in the array simultaneously reads the radiation signal. Reading is done using a pulse counting method that converts radiation quanta into one pulse, amplifies it, and counts it. A pulse amplifier and a counter circuit are provided in parallel for each element, and the radiation dose incident on the array is counted simultaneously. Each element counts pulses for a certain period of time and sends them to memory.
Repeat the same counting at the next position. The element array is passed along the subject either continuously or in stages. In this way, a two-dimensional radiation image signal can be obtained.
さらに、本発明の実施態様として被写体の放射
線被ばく量を低減するために、放射線源と被写体
との間に放射線スリツトを配し、放射線源と素子
アレイの各素子を結ぶ直線を含む面に該スリツト
の開口部を配置するようにする。素子アレイの移
動時も上記の関係が保たれるようにする。 Furthermore, as an embodiment of the present invention, in order to reduce the amount of radiation exposure of the subject, a radiation slit is arranged between the radiation source and the subject, and the slit is arranged in a plane including a straight line connecting the radiation source and each element of the element array. so that the opening of the The above relationship is maintained even when the element array is moved.
実施例の説明
第１図は、本発明にかかる装置を原理的に示す
図である。図において、１はＸ線発生管、２は放
射線検出器素子アレイ、３は被写体である。Ｘ線
はスリツト等により扇状に照射され、これが線状
の検出器アレイで検出される。同図の場合は、Ｘ
線源とアレイとが１体となつて構成されており、
これが、上方より下方へ一定速度で降下される。DESCRIPTION OF THE EMBODIMENTS FIG. 1 is a diagram showing the principle of an apparatus according to the invention. In the figure, 1 is an X-ray generating tube, 2 is a radiation detector element array, and 3 is an object. X-rays are emitted in a fan shape through a slit or the like, and detected by a linear detector array. In the case of the same figure,
A radiation source and an array are configured as one,
This is lowered from above to below at a constant speed.
第２図は上述の放射線検出器素子アレイをさら
に詳しく説明するための図である。４は基板、５
は半導体検出器結晶材料、６はその上に設けられ
た電極、７はこの半導体検出素子にそれぞれ１個
づつ並列に接続されたパルス増巾器、カウンター
パルスメモリ等の回路部を示している。半導体検
出器結晶材料としては種々のものがあり、従来、
シリコンSi、ゲルマニウムGeが用いられてきた
が、ここではガリウム砒素又はテルル化カドミウ
ムを用いている。この単結晶を厚さ約0.5mm程度、
巾約１mm程度、長さ１〜２cmに切り出し、表面を
研磨し、エツチング処理等を施してから電極をと
りつける。電極には金等の蒸着薄膜を用いる。電
極は、図に示ように、該結晶の一面に島状に複数
個をとりつける。他の電極はこの面の相対する
面、すなわち図では表われていないが結晶と基板
の間の面に取り付けてある。同様の島状の複数個
または１個の共通電極でもよい。相対応する島電
極が１つの素子を形成する。電界は、相対応する
上下の島電極の間に印加される。以上は素子アレ
イの構成の１例であるが、櫛型電極の例も考えら
れ、また、結晶を細切断して１素子に１結晶を用
い、これを並べてアレイを構成することも可能で
ある。 FIG. 2 is a diagram for explaining the above-mentioned radiation detector element array in more detail. 4 is the board, 5
1 denotes a semiconductor detector crystal material, 6 an electrode provided thereon, and 7 a circuit section, such as a pulse amplifier and a counter pulse memory, each connected in parallel to the semiconductor detection element. There are various types of semiconductor detector crystal materials.
Although silicon Si and germanium Ge have been used, gallium arsenide or cadmium telluride is used here. This single crystal is about 0.5mm thick.
Cut out a piece approximately 1 mm wide and 1 to 2 cm long, polish the surface, perform etching, etc., and then attach the electrode. A vapor-deposited thin film of gold or the like is used for the electrode. As shown in the figure, a plurality of electrodes are attached in the form of islands on one surface of the crystal. Another electrode is attached to the opposite side of this plane, ie, the plane between the crystal and the substrate, not shown in the figure. A plurality of similar island-shaped common electrodes or one common electrode may be used. Corresponding island electrodes form one element. An electric field is applied between corresponding upper and lower island electrodes. The above is an example of the configuration of an element array, but it is also possible to use a comb-shaped electrode, and it is also possible to cut the crystal into small pieces and use one crystal for each element and arrange them to form an array. .
この半導体検出器素子により、吸収された放射
線量子は電気パルスに変換される。この電気パル
スは、第２図に示すパルス増巾器７とパルスカウ
ンター回路に送られ、増巾され、その数を計数さ
れ、ICメモリに一時的にメモリされる。図に示
すように、これら回路部は素子１個に１個ずつ、
すなわち並列に接続されている。従つて、扇状に
入射した放射線を各素子同時に検出することがで
きる。アレイ中の素子は同時に放射線を一定時間
計数し、放射線の強度をパル数としてメモリ回路
に一時貯える。この間に、アレイは連続的に移動
し、計数が完了するメモリした各回路のパルス数
を外部回路に掃き出し、直ちに次の計数を開始す
る。すなわち、次の位置での計数を開始する。ア
レイの送りは、段階的に送つてもよい。 This semiconductor detector element converts the absorbed radiation quanta into electrical pulses. This electric pulse is sent to the pulse amplifier 7 and pulse counter circuit shown in FIG. 2, where it is amplified, counted, and temporarily stored in an IC memory. As shown in the figure, these circuit sections are one for each element.
That is, they are connected in parallel. Therefore, radiation incident in a fan shape can be detected simultaneously in each element. The elements in the array simultaneously count radiation for a certain period of time, and temporarily store the radiation intensity as a pulse number in a memory circuit. During this time, the array moves continuously, flushing the memorized pulse number of each circuit that has completed the count to an external circuit, and immediately begins the next count. That is, counting starts at the next position. The array may be fed in stages.
第３図は、これら素子に接続された回路図の例
である。図の８は初段のFETでこれは半導体検
出器から出力された高インピーダンスのパルス信
号をインピーダンス変換する。９はパルス増巾
部、１０はパルスカウンター回路部、１１はこの
パルスメモリである。これらはIC化設計により
小さくまとめられた半導体検出器素子と結線ささ
れる。 FIG. 3 is an example of a circuit diagram connected to these elements. 8 in the figure is the first stage FET, which converts the high impedance pulse signal output from the semiconductor detector into impedance. 9 is a pulse amplification section, 10 is a pulse counter circuit section, and 11 is this pulse memory. These are connected to semiconductor detector elements that are compacted by IC design.
一般に、放射線画像の画素数としては縦横それ
ぞれ500×500画素以上のものが望まれる。一方、
放射線照射撮影時間としては長くても10sec以下、
限界として15sec程度である。第１図に示したア
レイの駆動時間はこの範囲内でなければならな
い。このように考えると、１素子のパルス計数時
間は少くとも30msec以下でなければならない。
高品質の画像を得るためには60dB以上のダイナ
ミツクレンジが必要であり、このためには約105
パルス以上の計数能力を備えることが必要であ
る。30msecに105パルスの計数をするためには
0.3μsec以下のパルス分解時間が必要となる。前
述したGaAs又はCdTeの半導体検出器は最近結
晶の改良が進み、本発明者達の試作したものでは
この程度以下のパルス分解時間を得ている。 Generally, it is desired that the number of pixels in a radiation image be 500 x 500 pixels or more in each direction. on the other hand,
The radiation exposure imaging time is at most 10 seconds or less,
The limit is about 15 seconds. The drive time for the array shown in FIG. 1 must be within this range. Considering this, the pulse counting time of one element must be at least 30 msec or less.
A dynamic range of more than 60 dB is required to obtain a high-quality image, which requires approximately 10 5
It is necessary to have the ability to count more than pulses. To count 10 5 pulses in 30msec
Pulse resolution time of 0.3μsec or less is required. The crystals of the GaAs or CdTe semiconductor detectors mentioned above have recently been improved, and the prototype produced by the present inventors has obtained a pulse resolution time of this order or less.
アレイの感度は、各素子の入射断面積と有感層
厚さにより決定されるため、感度のバラツキは、
ほぼ素子の加工精度により決定される。そこで、
この補正法としては、素子のトリミングが行なわ
れるが、他に、パルス増幅器内のデイスクリミネ
ータ部の感度調整、カウンタ回路でのカウント補
正、更には、データ処理部での補正などを行な
う。また各素子毎の出力パルス波高のバラツキに
ついてはパルス増幅器の感度調整やデイスクリミ
ネータの感度調整を行なう。 The sensitivity of the array is determined by the incident cross section of each element and the thickness of the sensitive layer, so the variation in sensitivity is
It is determined approximately by the processing accuracy of the element. Therefore,
This correction method involves trimming the elements, but also performs sensitivity adjustment of the discriminator section in the pulse amplifier, count correction in the counter circuit, and further correction in the data processing section. Also, regarding variations in the output pulse height of each element, the sensitivity of the pulse amplifier and the discriminator are adjusted.
次に、放射線の照射方法について述べる。これ
は、被写体に対する放射線被ばくができるだけ少
なくなるような新しい工夫を行なつたものであ
る。第４図は、この方法を説明する図で、同図Ａ
はシステムを上部より見た図、同図Ｂはこれを横
から見た図である。図において、１２は前述の放
射線検出器のアレイとその回路系、１３は被写
体、１４は放射線遮蔽用のスリツト、１５はＸ線
源、１６は放射線検出器のアレイとその回路系１
２とスリツト１４とＸ線源１５を一体構造とする
構造物である。放射線画像の解像度を上げるため
にはアレイの感応部をできるだけ薄くしなければ
ならない。0.5mm厚以下が望ましい。扇状Ｘ線も
このアレイ感応部に丁度収まる寸法であれば被写
体の被ばく線量を最も少なくすることができる。
１４はこのような目的のためのスリツトでその開
口部は上下方向の巾１mm以下と非常に狭くしてあ
る。このように薄い扇状のＸ線ビームをアレイに
正確に照射しなければならないが、１６はこの目
的のための構造物で、図の例では、これを上より
下へ一定速度で降下するようになつている。スリ
ツト１４は、線源とアレイを含む面にその開口部
が位置するように固定され、移動時に於てもこの
条件は満たされる。 Next, the radiation irradiation method will be described. This is a new technique to reduce radiation exposure to the subject as much as possible. Figure 4 is a diagram explaining this method.
Figure B is a diagram of the system viewed from above, and Figure B is a diagram of the system viewed from the side. In the figure, 12 is the aforementioned radiation detector array and its circuit system, 13 is the subject, 14 is a slit for radiation shielding, 15 is an X-ray source, and 16 is the radiation detector array and its circuit system 1.
2, a slit 14, and an X-ray source 15 are integrated into one body. In order to increase the resolution of radiographic images, the sensitive part of the array must be made as thin as possible. A thickness of 0.5mm or less is desirable. If the size of the fan-shaped X-ray just fits within this array sensitive section, the dose to which the subject is exposed can be minimized.
Reference numeral 14 is a slit for this purpose, and its opening is very narrow, with a vertical width of 1 mm or less. In this way, it is necessary to accurately irradiate the array with a thin fan-shaped X-ray beam, and 16 is a structure for this purpose. It's summery. The slit 14 is fixed so that its opening is located in the plane containing the radiation source and the array, and this condition is satisfied even when it is moved.
このスリツトの位置条件を保つための他の方法
もある。線源を固定し、スリツトとアレイを動か
す方法である。この場合、スリツトとアレイの移
動速度を変える必要がある。この場合、アレイを
構成する半導体検出器素子とは別に、位置検出用
Ｘ線検出用素子をアレイの両端に配置する。スリ
ツト又はアレイの駆動速度は、この位置検出用素
子からの情報により制御され、常に前述した位置
条件を満足するように移動される。 There are other ways to maintain this slit position condition. This method fixes the source and moves the slit and array. In this case, it is necessary to change the moving speed of the slit and array. In this case, apart from the semiconductor detector elements that constitute the array, X-ray detection elements for position detection are arranged at both ends of the array. The driving speed of the slit or array is controlled by information from this position detecting element, and the slit or array is moved so as to always satisfy the above-mentioned position conditions.
最後に、本放射線検出器素子アレイを用いた放
射線診断装置の例を説明する。第５図はこの全体
の説明図である。Ｘ線管１７を出たＸ線はスリツ
ト１８により扇状ビームとなり、被写体に照射さ
れ、その透過Ｘ線は検知器アレイ１９に入射す
る。アレイ各素子は、透過Ｘ線量子数に比例した
数のパルスを発生する。このパルスを増幅器２０
で増幅し、データ処理用装置２１に送る。全アレ
イのデータが送られたら、アレイは微少量移動
し、次の位置でのデータを採取し、再びデータ処
理装置２１に送る。これを繰返し行ない、被写
体、全体を走査する。データ処理装置２１はメモ
リ２２に全データを収録し、必要に応じて、即時
にデイスプレイ２３や、ハードコピー装置２４に
出力したりすることが出来る。 Finally, an example of a radiation diagnostic apparatus using the present radiation detector element array will be described. FIG. 5 is an explanatory diagram of this whole. The X-rays exiting the X-ray tube 17 are turned into a fan-shaped beam by the slit 18 and irradiated onto the object, and the transmitted X-rays are incident on the detector array 19. Each element of the array generates a number of pulses proportional to the number of transmitted x-ray quanta. This pulse is transferred to the amplifier 20
and sends it to the data processing device 21. After the data of the entire array has been sent, the array is moved by a small amount, and data at the next position is collected and sent to the data processing device 21 again. Repeat this process to scan the entire subject. The data processing device 21 can record all data in the memory 22 and output it immediately to the display 23 or hard copy device 24 as needed.
なお、上記の実施例においては、被写体３，１
３として人体を図示して説明したが、本発明は人
体以外の一般物例えば電気部品にも適用できるも
のである。 In addition, in the above embodiment, the subjects 3 and 1
Although the human body is illustrated and explained as No. 3, the present invention can also be applied to general objects other than the human body, such as electrical parts.
発明の効果
以上、本発明の放射線受像装置によれば、次の
効果が得られる。Effects of the Invention As described above, according to the radiation image receiving apparatus of the present invention, the following effects can be obtained.
まず、感度であるが、放射線感応素子として半
導体検出器素子を用いているため、従来にくらべ
格段の高感度を示す。半導体検出器は、吸収した
放射線量子１個に対して１個の電気パルスを発生
する。従つて、本願発明の放射線受像装置では、
原理的にこれ以上の感度が得られない程の高感度
を得ることができる。 First, regarding sensitivity, since a semiconductor detector element is used as the radiation-sensitive element, it exhibits much higher sensitivity than conventional ones. A semiconductor detector generates one electrical pulse for each absorbed radiation quantum. Therefore, in the radiation image receiving device of the present invention,
It is possible to obtain such high sensitivity that in principle no higher sensitivity can be obtained.
従来では、これを高速測定する手段がなかつた
が、本願発明の放射線受像装置においては、アレ
イ中の素子の並列動作による高速パルス計測と言
う概念を具現化することにより、この測定を可能
とし、高感度を達成したものである。500ビツト
のアレイにより実際の放射線受像装置を行なつた
結果、60keV，1mRのＸ線量で鮮明なＸ線画像
を得た。これは、従来の銀塩のＸ線撮影に比し、
数10倍の感度を有しているわけである。なお、キ
セノン放電管アレイのように、パルス計測でな
く、電荷又は電流検出による方法は銀塩写真以下
の感度しか得られていない。また、銀塩写真法、
熱ルミネツセンス法等では、現像定着操作を必要
とし、画像の即時再生は困難であつたが、本発明
の放射線受像装置では、即時再生が可能となつ
た。なお、本発明の放射線受像装置では、放射線
検出器素子アレイを被写体に対し回転する様に構
成することにより、コンピユータートモグラフイ
ーへの適用も可能である。 Conventionally, there was no means to measure this at high speed, but the radiation image receiving apparatus of the present invention makes this measurement possible by embodying the concept of high-speed pulse measurement by parallel operation of elements in an array. This achieved high sensitivity. As a result of using an actual radiation receiver using a 500-bit array, clear X-ray images were obtained with an X-ray dose of 60 keV and 1 mR. This is compared to conventional silver salt X-ray photography.
In other words, it has several tens of times the sensitivity. Note that methods that use charge or current detection instead of pulse measurement, such as the xenon discharge tube array, have a sensitivity that is lower than that of silver halide photography. In addition, silver halide photography,
In the thermoluminescence method, etc., a developing and fixing operation is required, making it difficult to reproduce images immediately, but with the radiation image receiving apparatus of the present invention, immediate reproduction is possible. The radiation image receiving apparatus of the present invention can also be applied to computer tomography by configuring the radiation detector element array to rotate with respect to the subject.
第１図は本発明にかかる放射線受像装置の原理
的説明図、第２図は半導体検出器素子アレイとこ
のパルス増巾・カウンター・メモリ回路部の構成
図、第３図は上記回路部の具体的実施例を示す
図、第４図はＸ線源とスリツトと被写体と半導体
検出器素子アレイ部の構成図、第５図は本発明の
放射線受像装置の一実施例の構成図である。
１……Ｘ線発生管、２……半導体検出器素子ア
レイ、５……半導体検出器結晶材料、７……回路
ユニツト、１４……放射線遮蔽スリツト。
FIG. 1 is an explanatory diagram of the principle of the radiation image receiving apparatus according to the present invention, FIG. 2 is a configuration diagram of a semiconductor detector element array and its pulse amplification/counter/memory circuit section, and FIG. 3 is a detailed diagram of the above circuit section. FIG. 4 is a block diagram of an X-ray source, a slit, a subject, and a semiconductor detector element array section, and FIG. 5 is a block diagram of an embodiment of the radiation image receiving apparatus of the present invention. DESCRIPTION OF SYMBOLS 1...X-ray generating tube, 2...Semiconductor detector element array, 5...Semiconductor detector crystal material, 7...Circuit unit, 14...Radiation shielding slit.
Claims (1)
パルスに変換して検知する放射線感応素子を直線
または曲線弧状に１列に構成した放射線感応素子
アレイと、 前記各素子に並列に接続されたパルス増幅器及
びパルスカウンター回路と、 前記パルスカウンター回路の出力を保持するメ
モリとを具備すると共に、 前記放射線源もしくは前記放射線感応素子アレ
イの少なくとも何れか一方は移動可能に構成さ
れ、移動可能に構成された前記放射線源もしくは
前記放射線感応素子アレイが所定位置に移動され
る毎に、前記所定位置における前記各素子の放射
線画像濃度を前記メモリに保持されたカウント数
により検知し、二次元画像の濃度信号を得る放射
線受像装置。 ２ 前記放射線源と前記放射線感応素子アレイと
の間に、放射線スリツトを、そのスリツト開口部
が前記放射線源と前記放射線感応素子アレイ中の
各素子を結ぶ直線を含む面に含まれるように可動
に配備した特許請求の範囲第１項記載の放射線受
像装置。 ３ 前記放射線源と前記放射線スリツトと前記放
射線感応素子アレイとを、一体構造として同期し
て移動可能に構成した特許請求の範囲第２項記載
の放射線受像装置。 ４ 前記放射線源に対して、前記放射線スリツト
と前記放射線感応素子アレイとを、前記放射線ス
リツトの開口部が前記放射線源と前記放射線感応
素子を結ぶ直線状に常に位置するように移動可能
に構成した特許請求の範囲第２項記載の放射線受
像装置。 ５ 前記放射線感応素子アレイの各素子の放射線
照射パルスカウント時間が30msec以下であるこ
とを特徴とする特許請求の範囲第１項記載の放射
線受像装置。 ６ 前記放射線感応素子アレイの各素子に並列に
接続された並列回路の全部または一部に、、各素
子の放射線感度を調節または補正する手段を設け
たことを特徴とする特許請求の範囲第１項記載の
放射線受像装置。[Scope of Claims] 1. A radiation-sensitive element array comprising a radiation source and a radiation-sensitive element that converts absorbed radiation quanta into individual electric pulses and detects them in a straight line or curved arc shape; It comprises a pulse amplifier and a pulse counter circuit connected in parallel, and a memory that holds the output of the pulse counter circuit, and at least either the radiation source or the radiation sensitive element array is configured to be movable, Each time the movably configured radiation source or the radiation sensitive element array is moved to a predetermined position, the radiation image density of each element at the predetermined position is detected by a count number held in the memory; A radiation image receiving device that obtains density signals of dimensional images. 2. A radiation slit is movable between the radiation source and the radiation sensitive element array so that the opening of the slit is included in a plane including a straight line connecting the radiation source and each element in the radiation sensitive element array. A radiation image receiving device according to claim 1, which is deployed. 3. The radiation image receiving apparatus according to claim 2, wherein the radiation source, the radiation slit, and the radiation sensitive element array are configured to be movable in synchronization as an integral structure. 4. The radiation slit and the radiation sensitive element array are configured to be movable with respect to the radiation source such that the opening of the radiation slit is always located in a straight line connecting the radiation source and the radiation sensitive element. A radiation image receiving apparatus according to claim 2. 5. The radiation image receiving apparatus according to claim 1, wherein the radiation irradiation pulse count time of each element of the radiation sensitive element array is 30 msec or less. 6. Claim 1, characterized in that all or part of the parallel circuit connected in parallel to each element of the radiation sensitive element array is provided with means for adjusting or correcting the radiation sensitivity of each element. The radiation image receiving device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204053A JPS5994046A (en) | 1982-11-19 | 1982-11-19 | Radiation image acceptance method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204053A JPS5994046A (en) | 1982-11-19 | 1982-11-19 | Radiation image acceptance method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5994046A JPS5994046A (en) | 1984-05-30 |
| JPH0451172B2 true JPH0451172B2 (en) | 1992-08-18 |
Family
ID=16483964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57204053A Granted JPS5994046A (en) | 1982-11-19 | 1982-11-19 | Radiation image acceptance method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994046A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0640077B2 (en) * | 1983-10-12 | 1994-05-25 | 松下電器産業株式会社 | Radiation image receiving method |
| JP2526870B2 (en) * | 1986-08-19 | 1996-08-21 | 株式会社島津製作所 | Radiation image pickup device |
| JPH07114768B2 (en) * | 1987-04-22 | 1995-12-13 | 松下電器産業株式会社 | X-ray diagnostic device |
| JP2869975B2 (en) * | 1988-06-08 | 1999-03-10 | 株式会社島津製作所 | Radiation image receiving device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53101989A (en) * | 1977-02-17 | 1978-09-05 | Toshiba Corp | Mltichannel type semiconductor radiation detector |
| JPS54108681A (en) * | 1978-02-15 | 1979-08-25 | Toshiba Corp | Radiation pulse counting device |
| JPS54143192A (en) * | 1978-03-27 | 1979-11-08 | Univ California | Radiation detector and crossssectional xxray photograph scanner employing said detector |
| JPS5663281A (en) * | 1979-10-30 | 1981-05-29 | Fuji Electric Co Ltd | Radiation dose rate meter |
| JPS5633904B2 (en) * | 1977-06-17 | 1981-08-06 | ||
| JPS5710390A (en) * | 1980-06-23 | 1982-01-19 | Agency Of Ind Science & Technol | Methane-fermenting method for thermally decomposed oil of municipal waste |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754061Y2 (en) * | 1975-03-31 | 1982-11-22 | ||
| JPS5633904U (en) * | 1979-08-25 | 1981-04-02 |
-
1982
- 1982-11-19 JP JP57204053A patent/JPS5994046A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53101989A (en) * | 1977-02-17 | 1978-09-05 | Toshiba Corp | Mltichannel type semiconductor radiation detector |
| JPS5633904B2 (en) * | 1977-06-17 | 1981-08-06 | ||
| JPS54108681A (en) * | 1978-02-15 | 1979-08-25 | Toshiba Corp | Radiation pulse counting device |
| JPS54143192A (en) * | 1978-03-27 | 1979-11-08 | Univ California | Radiation detector and crossssectional xxray photograph scanner employing said detector |
| JPS5663281A (en) * | 1979-10-30 | 1981-05-29 | Fuji Electric Co Ltd | Radiation dose rate meter |
| JPS5710390A (en) * | 1980-06-23 | 1982-01-19 | Agency Of Ind Science & Technol | Methane-fermenting method for thermally decomposed oil of municipal waste |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5994046A (en) | 1984-05-30 |
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