JPH0450903A - Semiconductor laser module - Google Patents
Semiconductor laser moduleInfo
- Publication number
- JPH0450903A JPH0450903A JP2158212A JP15821290A JPH0450903A JP H0450903 A JPH0450903 A JP H0450903A JP 2158212 A JP2158212 A JP 2158212A JP 15821290 A JP15821290 A JP 15821290A JP H0450903 A JPH0450903 A JP H0450903A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light emitting
- flat part
- emitting element
- submount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 230000003287 optical effect Effects 0.000 claims abstract description 53
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 238000012544 monitoring process Methods 0.000 claims description 15
- 230000008878 coupling Effects 0.000 abstract description 10
- 238000010168 coupling process Methods 0.000 abstract description 10
- 238000005859 coupling reaction Methods 0.000 abstract description 10
- 239000011104 metalized film Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000013307 optical fiber Substances 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Abstract
Description
【発明の詳細な説明】
〔概要〕
光伝送系と、光信号を光伝送系に投入する半導体レーザ
と、半導体レーザの作動を監視するモニタ用発光素子と
を、ケースに収容した半導体レーザモジュールに関し、
半導体レーザ、モニタ用発光素子の位置調整作業が容易
で、且つ小形化された半導体レーザモジュールを提供す
ることを目的とし、
光伝送系と、光信号を該光伝送系に投入する半導体レー
ザと、該半導体レーザの作動を監視するモニタ用発光素
子とを、ケースに収容したモジュールにおいて、該ケー
スの側壁に該光伝送系が装着され、
第１の平坦部と、第２の平坦部と、該第２の平坦部の端
部に該第１の平坦部に対向して設けた垂直壁とを備えた
サブマウントが、ケース底板に固着され、該半導体レー
ザが、一方の発光面を該光伝送系に対向して該第１の平
坦部に搭載され、該モニタ用発光素子が、受光面を該半
導体レーザの他方の発光面に対向して、該垂直壁に搭載
された構成とする。[Detailed Description of the Invention] [Summary] This invention relates to a semiconductor laser module in which an optical transmission system, a semiconductor laser that inputs an optical signal to the optical transmission system, and a monitoring light emitting element that monitors the operation of the semiconductor laser are housed in a case. The purpose of the present invention is to provide a semiconductor laser module which is easy to adjust the positions of a semiconductor laser and a light emitting element for monitoring, and which is miniaturized. , a module in which a monitor light emitting element for monitoring the operation of the semiconductor laser is housed in a case, the optical transmission system is attached to a side wall of the case, a first flat part, a second flat part, A submount having a vertical wall provided at an end of the second flat part facing the first flat part is fixed to the case bottom plate, and the semiconductor laser has one light emitting surface facing the light emitting surface. The monitoring light-emitting element is mounted on the vertical wall with its light-receiving surface facing the other light-emitting surface of the semiconductor laser.
本発明は、光伝送系と、光信号を光伝送系に投入する半
導体レーザと、半導体レーザの作動を監視するモニタ用
発光素子とを、ケースに収容した半導体レーザモジュー
ルに関する。The present invention relates to a semiconductor laser module in which an optical transmission system, a semiconductor laser for inputting an optical signal into the optical transmission system, and a monitoring light emitting element for monitoring the operation of the semiconductor laser are housed in a case.
第３図は従来の半導体レーザモジュールの断面図である
。FIG. 3 is a sectional view of a conventional semiconductor laser module.
第ｆ図において３０は、上部が開口した箱形で、Ｆｅ−
Ｎｉ−Ｃｏ合金（商品名コバール）等の金属よりなるケ
ースであって、開口部は最後に蓋で封止されるものであ
る。In FIG.
The case is made of metal such as Ni-Co alloy (trade name: Kovar), and the opening is finally sealed with a lid.
１は、レンズ２と光ファイバ３とが光結合するように組
合わせられた光伝送系である。Reference numeral 1 denotes an optical transmission system in which a lens 2 and an optical fiber 3 are combined for optical coupling.
詳述すると、光伝送系１のレンズ２は、ホルダー５の軸
孔に挿入されており、軸心の微細孔に光ファイバ３の端
末が挿着されてなるフェルール４を、その受光側端面を
レンズ２に対向させホルダー５の軸孔に挿入し、レンズ
２と端面との距離を所定に調整した後に、ホルダー５の
端面とフェルール４の外周面とをレーザ溶接等して固着
しである。To be more specific, the lens 2 of the optical transmission system 1 is inserted into the shaft hole of the holder 5, and the ferrule 4, in which the end of the optical fiber 3 is inserted into the fine hole at the shaft center, is inserted into the ferrule 4 with its light-receiving end surface. After inserting it into the shaft hole of the holder 5 facing the lens 2 and adjusting the distance between the lens 2 and the end surface to a predetermined value, the end surface of the holder 5 and the outer peripheral surface of the ferrule 4 are fixed by laser welding or the like.
レンズ２をケースの内側にして、ホルダー５の円筒部を
ケース３０の側壁３２に設けた孔（軸心がケース底板３
１に平行する孔）に挿入し、ホルダー５のフランジと側
壁３２の外側面とをレーザ溶接等して固着して、光伝送
系１をケース３０に装着している。With the lens 2 inside the case, the cylindrical part of the holder 5 is a hole provided in the side wall 32 of the case 30 (the axis is aligned with the case bottom plate 3).
The flange of the holder 5 and the outer surface of the side wall 32 are fixed by laser welding or the like, and the optical transmission system 1 is attached to the case 30.
上面に半導体レーザ１０を搭載するサブマウント１５は
、セラミックスよりなる直方体形で、その上面にはメタ
ライズ膜１６を設けである。The submount 15 on which the semiconductor laser 10 is mounted has a rectangular parallelepiped shape made of ceramics, and a metallized film 16 is provided on the upper surface.
半導体レーザ１０は、一方の発光面１１がレンズ２に対
向するようにサブマウント１５の上面に載せられ、底面
を導電性接着剤を用いてメタライズ＃１６に固着するこ
とで、サブマウント１５に搭載されている。The semiconductor laser 10 is placed on the top surface of the submount 15 with one light emitting surface 11 facing the lens 2, and is mounted on the submount 15 by fixing the bottom surface to metallization #16 using a conductive adhesive. has been done.
レーザ１０の電極１３は、金線等のワイヤを介して回路
基板（図示省略）の駆動回路に接続されている。The electrode 13 of the laser 10 is connected to a drive circuit on a circuit board (not shown) via a wire such as a gold wire.
一方、垂直面にモニタ用発光素子２０を搭載するサブマ
ウント２５は、セラミックスよりなる矩形板状で、半導
体レーザ１０に対向する垂直面にメタライズ膜２６を設
けである。On the other hand, the submount 25 on which the monitor light emitting element 20 is mounted on the vertical surface is a rectangular plate made of ceramic, and a metallized film 26 is provided on the vertical surface facing the semiconductor laser 10.
モニタ用発光素子２０は、受光面２１を半導体レーザ１
０の他方の発光面１２に対向させ、底面を垂直面に当接
させ、底面を導電性接着剤を用いてメタライズ膜２６に
固着することで、サブマウント２５に搭載されている。The monitor light emitting element 20 has a light receiving surface 21 connected to the semiconductor laser 1.
0, the bottom surface is in contact with a vertical surface, and the bottom surface is fixed to the metallized film 26 using a conductive adhesive, thereby being mounted on the submount 25.
そしてモニタ用発光素子２０の電極２３は、金線等のワ
イヤを介して回路基板の増幅回路に接続されている。The electrode 23 of the monitor light emitting element 20 is connected to the amplifier circuit of the circuit board via a wire such as a gold wire.
尚、半導体レーザ１０は、光伝送系１との光結合度が最
高になるような位置に、サブマウント１５がケース底板
３１に固着され、モニタ用発光素子２０は、半導体レー
ザ１０との光結合が最高になるような位置に、サブマウ
ント２５がケース底板３１に固着されている。The semiconductor laser 10 has a submount 15 fixed to the case bottom plate 31 at a position where the degree of optical coupling with the optical transmission system 1 is maximized, and the monitor light emitting element 20 has the highest optical coupling with the semiconductor laser 10. The submount 25 is fixed to the case bottom plate 31 at a position where the height is the highest.
上述のように半導体レーザモジュールが構成されている
ので、半導体レーザ１０の一方の発光面１１から出射し
た光信号は、レンズ２に投射され、レンズ２により光フ
ァイバ３の端面で集光して光ファイバ３を進行する。Since the semiconductor laser module is configured as described above, the optical signal emitted from one light emitting surface 11 of the semiconductor laser 10 is projected onto the lens 2, and is focused by the lens 2 on the end face of the optical fiber 3 to generate light. Proceed through fiber 3.
一方、半導体レーザ１０の他方の発光面１２からも光信
号が出射して、モニタ用発光素子２０の受光面２１に投
射する。On the other hand, an optical signal is also emitted from the other light emitting surface 12 of the semiconductor laser 10 and projected onto the light receiving surface 21 of the monitor light emitting element 20 .
したがって、このような半導体レーザモジュールは、光
ファイバ３を進行する光信号と同波形の信号を、モニタ
用発光素子２０を介してモニターすることができる。Therefore, such a semiconductor laser module can monitor a signal having the same waveform as the optical signal traveling through the optical fiber 3 via the monitoring light emitting element 20.
ところで、半導体レーザ１０と光伝送系１との光結合度
が最高になるように位置調整するには、半導体レーザ１
０を駆動し光ファイバ３に装着した光検出器を観測しな
がら、サブマウント１５をＺ軸（光軸方向をいう）及び
Ｘ軸、Ｙ軸方向に微細に移動調整し、光ファイバ３の出
力が最高の位置でサブマウント１５をケース底板３１に
固着（接着剤等を用いて固着）している。By the way, in order to adjust the position so that the degree of optical coupling between the semiconductor laser 10 and the optical transmission system 1 is maximized, the semiconductor laser 1
0 and while observing the photodetector attached to the optical fiber 3, finely move and adjust the submount 15 in the Z-axis (referring to the optical axis direction), X-axis, and Y-axis directions to adjust the output of the optical fiber 3. The submount 15 is fixed to the case bottom plate 31 (fixed using adhesive or the like) at the highest position.
一方、モニタ用発光素子２０を半導体レーザ１０と光結
合度が最高になるように位置調整するには、半導体レー
ザ１０を駆動しモニタ用発光素子２ｏの出力を観測しな
がら、サブマウント２５をＺ軸（光軸方向をいう）及び
Ｘ軸、Ｙ軸方向に微細に移動調整し、モニタ用発光素子
２０の出力が最高の位置でサブマウント２５をケース底
板３１に固着（接着剤等を用いて固着）している。On the other hand, in order to adjust the position of the monitor light emitting element 20 so that the degree of optical coupling with the semiconductor laser 10 is maximized, the submount 25 is moved to Z while driving the semiconductor laser 10 and observing the output of the monitor light emitting element 2o. Finely move the submount 25 in the axis (referring to the optical axis direction), X-axis, and Y-axis directions, and fix the submount 25 to the case bottom plate 31 (using adhesive or the like) at the position where the output of the monitor light emitting element 20 is the highest. fixed).
したがって従来の半導体レーザモジュールは、狭いケー
ス内で半導体レーザの位置調整と、モニタ用発光素子の
位置調整を実施しなければならず、調整作業性が劣ると
いう問題点があった。Therefore, the conventional semiconductor laser module has a problem in that the position of the semiconductor laser and the monitor light emitting element must be adjusted within a narrow case, resulting in poor adjustment workability.
また、２個のサブマウントを収容するための広いケース
底板が必要となり、半導体レーザモジュールが大形化す
る恐れがあった。Furthermore, a wide bottom plate of the case is required to accommodate the two submounts, which may increase the size of the semiconductor laser module.
本発明はこのような点に鑑みて創作されたもので、半導
体レーザ、モニタ用発光素子の位置調整作業が容易で、
且つ小形化された半導体レーザモジュールを提供するこ
とを目的としている。The present invention was created in view of these points, and it is easy to adjust the position of the semiconductor laser and the monitor light emitting element.
Another object of the present invention is to provide a miniaturized semiconductor laser module.
上記の目的を達成するために本発明は、第１図に例示し
たように、光伝送系１と、光信号を光伝送系１に投入す
る半導体レーザ１０と、半導体レーザ１０の作動を監視
するモニタ用発光素子２０を、ケース３０に収容したモ
ジュールにおいて、ケース３０の側壁３２に光伝送系１
を装着する。In order to achieve the above object, the present invention, as illustrated in FIG. In a module in which a monitor light emitting element 20 is housed in a case 30, an optical transmission system 1 is mounted on a side wall 32 of the case 30.
Attach.
第１の平坦部５１と、第２の平坦部５２と、第２の平坦
部５２の端部に第１の平坦部５１に対向する垂直壁５３
とを備えたサブマウント５０を、ケース底板３１に固着
する構成とする。A first flat part 51 , a second flat part 52 , and a vertical wall 53 facing the first flat part 51 at the end of the second flat part 52
The submount 50 is configured to be fixed to the case bottom plate 31.
そして、半導体レーザ１０は、一方の発光面１１が光伝
送系ｌに対向した状態で第１の平坦部５１に搭載された
ものとし、モニタ用発光素子２０は、受光面２１を半導
体レーザ１０の他方の発光面１２に対向した状態で、垂
直壁５３に搭載されたものとする。The semiconductor laser 10 is mounted on the first flat part 51 with one light emitting surface 11 facing the optical transmission system l, and the monitor light emitting element 20 has the light receiving surface 21 of the semiconductor laser 10 facing the optical transmission system l. It is assumed that it is mounted on a vertical wall 53 while facing the other light emitting surface 12 .
また、第２図に例示したように、半導体レーザ１０が搭
載される第１の平坦部６１と、モニタ用発光素子２０の
下部側面が当接する第２の平坦部６２と、第２の平坦部
６２の端部に第１の平坦部６１に対向して設けられ、モ
ニタ用発光素子２０が受光面２１を半導体レーザ１０の
他方の発光面１２に対向して搭載される垂直壁６３とを
備えたサブマウント６０の構造において、第１の平坦部
６１と第２の平坦部６２との段差を所定の高さとする。In addition, as illustrated in FIG. 2, a first flat part 61 on which the semiconductor laser 10 is mounted, a second flat part 62 to which the lower side surface of the monitor light emitting element 20 comes into contact, and a second flat part 61 on which the semiconductor laser 10 is mounted are provided. A vertical wall 63 is provided at an end of the semiconductor laser 62 to face the first flat part 61, and the monitor light emitting element 20 is mounted with the light receiving surface 21 facing the other light emitting surface 12 of the semiconductor laser 10. In the structure of the submount 60, the step difference between the first flat part 61 and the second flat part 62 is set to a predetermined height.
また、第１の平坦部６１に、半導体レーザ１０のモニタ
用発光素子２０側の発光面１２の両サイドが当接する一
対の角柱６５と、半導体レーザ１０の選択した側面が当
接するストッパ６６とを設ける。Furthermore, a pair of prisms 65 on which both sides of the light emitting surface 12 of the semiconductor laser 10 on the monitoring light emitting element 20 side come into contact with the first flat portion 61, and a stopper 66 on which a selected side surface of the semiconductor laser 10 comes into contact are provided. establish.
一方、第２の平坦部６２に、モニタ用発光素子２０の選
択した側面が当接するストッパ６７を設けた構成とする
。On the other hand, the second flat portion 62 is provided with a stopper 67 against which a selected side surface of the monitor light emitting element 20 comes into contact.
上述のように半導体レーザ１０とモニタ用発光素子２０
とは、同一のサブマウント５０に搭載されている。As described above, the semiconductor laser 10 and the monitor light emitting element 20
are mounted on the same submount 50.
したたがって、半導体レーザ１０とモニタ用発光素子２
０との関係位置を調整し搭載したサブマウント５０を、
ケース内に持ち込み、光伝送系１と半導体レーザ１０と
の光結合が最高になるようにサブマウント５０の位置調
整を実施することで、調整作業が容易となる。Therefore, the semiconductor laser 10 and the monitor light emitting element 2
The submount 50 is mounted with the adjusted position relative to 0.
The adjustment work is facilitated by bringing it into the case and adjusting the position of the submount 50 so that the optical coupling between the optical transmission system 1 and the semiconductor laser 10 is maximized.
また、半導体レーザ１０とモニタ用発光素子２０とが近
接配置したサブマウント構造とすることで、半導体レー
ザ１０とモニタ用発光素子２０との光結合度が高くなる
ばかりでなく、サブマウント５０が小形化される。即ち
、半導体レーザモジュールが小形になる。Further, by adopting a submount structure in which the semiconductor laser 10 and the monitor light emitting element 20 are arranged close to each other, not only the degree of optical coupling between the semiconductor laser 10 and the monitor light emitting element 20 is increased, but also the submount 50 is made smaller. be converted into That is, the semiconductor laser module becomes smaller.
第２の発明においては、第１の平坦部６１と第２の平坦
部６２との段差を、半導体レーザ１０の発光面の中心か
ら底面までの距離と、モニタ用発光素子２０の受光面２
１の中心から下部側面まで距離との、差に等しくするも
のとする。In the second invention, the step between the first flat part 61 and the second flat part 62 is determined by the distance from the center of the light emitting surface of the semiconductor laser 10 to the bottom surface and the light receiving surface 2 of the monitoring light emitting element 20.
It shall be equal to the difference between the distance from the center of 1 to the lower side surface.
また、第１の平坦部６１のストッパ６６の位置は、半導
体レーザ１０の発光面の中心線から所定に離れた位置と
する。Further, the position of the stopper 66 of the first flat portion 61 is set at a predetermined distance from the center line of the light emitting surface of the semiconductor laser 10.
さらに第２の平坦部６２のストッパ６７の位置は、モニ
タ用発光素子２０の受光面２１の中心線から所定に離れ
た位置とする。Further, the stopper 67 of the second flat portion 62 is located at a predetermined distance from the center line of the light receiving surface 21 of the monitor light emitting element 20.
このような構成になっているので、ストッパ６６に半導
体レーザ１０の側面を当接し、モニタ用発光素子２０の
側面をストッパ６７に当接すると、半導体レーザ１０と
モニタ用発光素子２０の光軸が一致する。With this configuration, when the side surface of the semiconductor laser 10 is brought into contact with the stopper 66 and the side surface of the monitor light emitting element 20 is brought into contact with the stopper 67, the optical axes of the semiconductor laser 10 and the monitor light emitting element 20 are aligned. Match.
よって、半導体レーザ１０とモニタ用発光素子２０との
位置調整は、殆ど実施しなくて済む。Therefore, there is almost no need to adjust the positions of the semiconductor laser 10 and the monitoring light emitting element 20.
以下図を参照しながら、本発明を具体的に説明する。な
お、全図を通じて同一符号は同一対象物を示す。The present invention will be specifically described below with reference to the drawings. Note that the same reference numerals indicate the same objects throughout the figures.
第１図は第１の発明の図で、（ａｌは側断面図、（ｂ）
は平面図、第２図は第２の発明の図で、（ａ）はサブマ
ウントの斜視図、（ｂｌは側断面図である。FIG. 1 is a diagram of the first invention, (al is a side sectional view, (b)
is a plan view, FIG. 2 is a diagram of the second invention, (a) is a perspective view of the submount, and (bl is a side sectional view).
第１図において、レンズ２と光ファイバ３とを光結合す
るように組み合わせた光伝送系工は、レンズ２がホルダ
ー５の軸孔に挿入され、光ファイバ３はその端末がフェ
ルール４の軸心の微細孔に挿着され、フェルール４をホ
ルダー５の軸孔に挿入し、光ファイバ３の受光端面とレ
ンズ２との距離が所定に調整されている。In FIG. 1, in an optical transmission system in which a lens 2 and an optical fiber 3 are combined so as to be optically coupled, the lens 2 is inserted into the shaft hole of the holder 5, and the end of the optical fiber 3 is centered on the axis of the ferrule 4. The ferrule 4 is inserted into the shaft hole of the holder 5, and the distance between the light-receiving end surface of the optical fiber 3 and the lens 2 is adjusted to a predetermined value.
そして、上部が開口した箱形のＦｅ−Ｎｉ−Ｃｏ合金等
の金属よりなるケース３０の側壁３２に、ケース底板３
１に平行する孔３３を穿孔し、この孔３３にホルダー５
の円筒部を挿入することで、光伝送系ｌがケース３０に
装着されている。A case bottom plate 3 is attached to a side wall 32 of a box-shaped case 30 made of metal such as Fe-Ni-Co alloy with an open top.
A hole 33 parallel to 1 is drilled, and a holder 5 is inserted into this hole 33.
The optical transmission system 1 is attached to the case 30 by inserting the cylindrical portion of the cylindrical portion.
５０は、セラミックスよりなりサブマウントであって、
その上部の光伝送系寄りに、水平な第１の平坦部５１を
設けである。50 is a submount made of ceramics,
A horizontal first flat portion 51 is provided above the optical transmission system.
そして、光伝送系１とは反対側に、第１の平坦部５１よ
りも低い第２の平坦部５２を設け、この第２の平坦部５
２の端に垂直壁５３を設けである。A second flat part 52 lower than the first flat part 51 is provided on the opposite side of the optical transmission system 1, and this second flat part 5
A vertical wall 53 is provided at the end of 2.
第１の平坦部５１の表面に、半導体レーザ１０の底面を
導電性接着剤を用いて接着するメタライズ膜５１Ａを形
成してあり、また垂直壁５３の垂直面にはモニタ用発光
素子２０の底面を導電性接着剤を用いて接着するメタラ
イズ膜５３Ａを形成しである。A metallized film 51A is formed on the surface of the first flat portion 51 to adhere the bottom surface of the semiconductor laser 10 using a conductive adhesive, and the bottom surface of the monitor light emitting element 20 is formed on the vertical surface of the vertical wall 53. A metallized film 53A is formed which is bonded using a conductive adhesive.
上述のようなサブマウント５０は、まず半導体レーザ１
０を第１の平坦部５１に固着する。次に垂直壁５３の垂
直面に導電性接着剤を塗布して、モニタ用発光素子２０
の底面を当接し、半導体レーザ１０を駆動し、モニタ用
発光素子２０の出力を観測しながら、モニタ用発光素子
２０を垂直壁５３の垂直面上でＸ軸。The above-mentioned submount 50 first includes a semiconductor laser 1
0 is fixed to the first flat portion 51. Next, conductive adhesive is applied to the vertical surface of the vertical wall 53, and the monitor light emitting element 20
While driving the semiconductor laser 10 and observing the output of the monitor light emitting element 20, the monitor light emitting element 20 is placed on the vertical surface of the vertical wall 53 on the X axis.
Ｙ軸方向に微細に移動調整し、モニタ用発光素子２０の
出力が最高の位置で導電性接着剤を加熱し硬化して、モ
ニタ用発光素子２０を垂直壁５３に固着するものである
。The monitor light emitting element 20 is fixed to the vertical wall 53 by finely adjusting the movement in the Y-axis direction and heating and curing the conductive adhesive at the position where the output of the monitor light emitting element 20 is highest.
なお、サブマウント５０の底面から第１の平坦部５１ま
での高さは、半導体レーザ１０の発光面１１の中心から
底面までの距離、及び導電性接着剤の厚さ等を考慮して
予め設定して、半導体レーザ１０の光軸が光伝送系１の
光軸と同一レベルになるように、加工しておくことが好
ましい。Note that the height from the bottom surface of the submount 50 to the first flat portion 51 is set in advance in consideration of the distance from the center of the light emitting surface 11 of the semiconductor laser 10 to the bottom surface, the thickness of the conductive adhesive, etc. It is preferable to process the semiconductor laser 10 so that its optical axis is on the same level as the optical axis of the optical transmission system 1.
半導体レーザ１０とモニタ用発光素子２０とが所定に搭
載されたサブマウント５０を、ケース３０内に持ち込み
、半導体レーザｌＯを駆動し光ファイバ３に装着した光
検出器を観測しながら、サブマウント５０をケース底板
３１の表面を微細にＺ軸（図では左右方向で光軸に平行
する方向をいう）及びＸ軸（図では用紙に対して垂直の
方向）に摺動移動させ、光ファイバ３の出力が最高の位
置でサブマウント５０をケース底板３１に固着している
。The submount 50 on which the semiconductor laser 10 and the monitor light emitting element 20 are mounted is brought into the case 30, and the submount 50 is moved while driving the semiconductor laser IO and observing the photodetector attached to the optical fiber 3. The surface of the case bottom plate 31 is finely slid along the Z-axis (in the figure, the left-right direction parallel to the optical axis) and the X-axis (in the figure, the direction perpendicular to the paper). The submount 50 is fixed to the case bottom plate 31 at the highest output position.
一方、７０は、半導体レーザ１０の駆動回路、及びモニ
タ用発光素子２０の増幅回路等を形成した回路基板であ
って、第１図（′ｂ）に示すように、ケース３０の所定
の位置にケース底板３１に平行に搭載されている。On the other hand, 70 is a circuit board on which a drive circuit for the semiconductor laser 10, an amplification circuit for the monitor light emitting element 20, etc. are formed, and is mounted at a predetermined position in the case 30, as shown in FIG. 1('b). It is mounted parallel to the case bottom plate 31.
そして、レーザ１０の電極１３及びメタライズ膜５１Ａ
は、それぞれ金線等のワイヤを介して回路基板７０の駆
動回路に接続され、モニタ用発光素子２０の電極２３及
びメタライズ膜５３Ａは、それぞれ金線等のワイヤを介
して回路基板７０の増幅回路に接続されている。Then, the electrode 13 of the laser 10 and the metallized film 51A
are connected to the drive circuit of the circuit board 70 through wires such as gold wires, and the electrodes 23 of the monitor light emitting element 20 and the metallized film 53A are connected to the amplifier circuit of the circuit board 70 through wires such as gold wires. It is connected to the.
なお、半導体レーザ１０とモニタ用発光素子２０とが近
接配置したサブマウント構造とすることで、半導体レー
ザ１０とモニタ用発光素子２０との光結合度が高くなる
ばかりでなく、サブマウント５０が小形化される。即ち
半導体レーザモジュールが小形になる。Note that by adopting a submount structure in which the semiconductor laser 10 and the monitor light emitting element 20 are arranged close to each other, not only the degree of optical coupling between the semiconductor laser 10 and the monitor light emitting element 20 is increased, but also the submount 50 is made smaller. be converted into That is, the semiconductor laser module becomes smaller.
第２図に図示したように、第２の発明にかかわるサブマ
ウント６０は、半導体レーザ１０を搭載する第１の平坦
部６１と、モニタ用発光素子２０の下部側面が当接する
第２の平坦部６２と、第２の平坦部６２の端部に第１の
平坦部６１に対向して設けられ、モニタ用発光素子２０
を受光面２１を半導体レーザ１０の他方の発光面１２に
対向して搭載する垂直壁６３とを備えたものである。As shown in FIG. 2, the submount 60 according to the second invention includes a first flat part 61 on which the semiconductor laser 10 is mounted, and a second flat part on which the lower side surface of the monitor light emitting element 20 comes into contact. 62 and a monitor light emitting element 20 provided at the end of the second flat part 62 to face the first flat part 61.
and a vertical wall 63 on which the light-receiving surface 21 is mounted facing the other light-emitting surface 12 of the semiconductor laser 10.
サブマウント６０は、第１の平坦部６１と第２の平坦部
６２との段差を、半導体レーザ１０の発光面の中心から
底面までの距離と、モニタ用発光素子２０の受光面２１
の中心から下部側面まで距離との、差に等しくしである
。The submount 60 has a height difference between the first flat part 61 and the second flat part 62 based on the distance from the center of the light emitting surface of the semiconductor laser 10 to the bottom surface and the light receiving surface 21 of the monitoring light emitting element 20.
is equal to the difference between the distance from the center to the bottom side of the plane.
また、第１の平坦部６１に、半導体レーザ１０のモニタ
用発光素子２０側の発光面１２の両サイドが当接する一
対の角柱６５と、半導体レーザ１０の選択した側面が当
接するストッパ６６とを設けである。Furthermore, a pair of prisms 65 on which both sides of the light emitting surface 12 of the semiconductor laser 10 on the monitoring light emitting element 20 side come into contact with the first flat portion 61, and a stopper 66 on which a selected side surface of the semiconductor laser 10 comes into contact are provided. It is a provision.
このストッパ６６の垂直面（半導体レーザ１０の側面が
当接する面）と一対の角柱６５の中間線との距離は、半
導体レーザ１０の発光面の中心から側面までの距離に等
しくしである。The distance between the vertical surface of this stopper 66 (the surface that the side surface of the semiconductor laser 10 contacts) and the midline between the pair of prisms 65 is equal to the distance from the center of the light emitting surface of the semiconductor laser 10 to the side surface.
一方、第２の平坦部６２に、モニタ用発光素子２０の一
方の側面が当接する直方体形のストッパ６７を設けであ
る。On the other hand, a rectangular parallelepiped stopper 67 is provided on the second flat portion 62, with which one side surface of the monitor light emitting element 20 comes into contact.
そして、このストッパ６７の垂直面（モニタ用発光素子
２０の側面が当接する面）と一対の角柱６５の中間線と
の距離は、モニタ用発光素子２０の受光面の中心からモ
ニタ用発光素子の側面までの距離に等しくしである。The distance between the vertical surface of this stopper 67 (the surface that the side surface of the monitor light emitting element 20 contacts) and the midline between the pair of prisms 65 is determined from the center of the light receiving surface of the monitor light emitting element 20 to the distance between the monitor light emitting element 20 It is equal to the distance to the side.
また、第１の平坦部６１の表面に、メタライズ膜６１Ａ
を形成し、選択した一方の角柱６５の上面から外側の側
面にかけて逆り形に導体パターン６８を形成しである。Further, a metallized film 61A is provided on the surface of the first flat portion 61.
, and a conductor pattern 68 is formed in an inverted shape from the top surface to the outer side surface of one of the selected prisms 65.
この導体パターン６８は、一端を金線等のワイヤを介し
て電極に接続し、他端を金線等のワイヤを介して回路基
板（図示省略）のパターンに接続するものである。The conductor pattern 68 has one end connected to an electrode via a wire such as a gold wire, and the other end connected to a pattern on a circuit board (not shown) via a wire such as a gold wire.
また、垂直壁６３の垂直面にメタライズ膜６３Ａを形成
し、上面から外側の側面にかけて逆り形に導体パターン
６９を形成しである。Further, a metallized film 63A is formed on the vertical surface of the vertical wall 63, and a conductive pattern 69 is formed in an inverted shape from the top surface to the outer side surface.
この導体パターン６９は、一端を金線等のワイヤを介し
てモニタ用発光素子２０の電極に接続し、他端を金線等
のワイヤを介して、回路基板（図示省略）のパターンに
接続するものである。This conductor pattern 69 has one end connected to the electrode of the monitor light emitting element 20 via a wire such as a gold wire, and the other end connected to a pattern on a circuit board (not shown) via a wire such as a gold wire. It is something.
第２図（ｂ）に図示したように、半導体レーザ１０は発
光面１２０両サイドが角柱６５の垂直面に当接し、その
側面がストッパ６６の垂直面に当接した状態で底面が第
１の平坦部６１の表面に密接し、導電性接着剤によりメ
タライズ膜６１Ａに固着されて、搭載されている。As shown in FIG. 2(b), in the semiconductor laser 10, both sides of the light emitting surface 120 are in contact with the vertical surface of the prism 65, and with the side surfaces in contact with the vertical surface of the stopper 66, the bottom surface is in contact with the first vertical surface. It is mounted in close contact with the surface of the flat portion 61 and fixed to the metallized film 61A with a conductive adhesive.
モニタ用発光素子２０は下部側面が第２の平坦部６２に
当接し、一方の側面がストッパ６７の垂直面に当接した
状態で、底面が垂直壁６３の垂直面に密接し、導電性接
着剤によりメタライズ膜６３Ａに固着されて、搭載され
ている。The monitor light emitting element 20 has a lower side surface in contact with the second flat part 62, one side surface in contact with the vertical surface of the stopper 67, a bottom surface in close contact with the vertical surface of the vertical wall 63, and conductive adhesive It is fixed to and mounted on the metallized film 63A by an agent.
即ち、半導体レーザ１０の光軸とモニタ用発光素子２０
の光軸が一致しているので、調整作業を実施する必要が
ない。That is, the optical axis of the semiconductor laser 10 and the monitor light emitting element 20
Since the optical axes of the two are aligned, there is no need to perform adjustment work.
上述のようなサブマウント６０は、ケース３０内に持ち
込まれ、半導体レーザ１０と光伝送系１との光結合度が
最高になるような位置で、底面がケース底板３１に固着
されている。The above-described submount 60 is brought into the case 30, and its bottom surface is fixed to the case bottom plate 31 at a position where the degree of optical coupling between the semiconductor laser 10 and the optical transmission system 1 is maximized.
以上説明したように本発明は、半導体レーザとモニタ用
発光素子とを同一のサブマウントに搭載する構造である
ので、半導体レーザとモニタ用発光素子との光学的関係
位置の調整をケースの外で実施することができる。即ち
、位置調整作業が容易である。As explained above, the present invention has a structure in which the semiconductor laser and the monitor light emitting element are mounted on the same submount, so the optical relationship between the semiconductor laser and the monitor light emitting element can be adjusted outside the case. It can be implemented. That is, position adjustment work is easy.
また第２の発明は、半導体レーザとモニタ用発光素子と
の間の光学的関係位置の調整が不要であるという優れた
効果がある。Furthermore, the second invention has an excellent effect in that it is not necessary to adjust the optical position between the semiconductor laser and the monitoring light emitting element.
さらにまた、第１．第２の発明はともに、サブマウント
が１個だけであるので、半導体レーザモジュールの小形
化を推進できる。Furthermore, the first. In both of the second inventions, since there is only one submount, it is possible to promote downsizing of the semiconductor laser module.
第１図は第１の発明の図で、
（ａ）は側断面図、
（ｂ）は平面図、
第２図は第２の発明の図で、
（ａｌはサブマウントの斜視図、
０））は側断面図、
第３図は従来例の断面図である。
図において、
１は光伝送系、 ２はレンズ、３は光ファイ
バ、 ４はフェルール、５はホルダー
１０は半導体レーザ、１１．１２は発光面、
１３．２３は電極、２０はモニタ用発光素子、 ３０
はケース、３１はケース底板、 ３２は側壁、
１５．２５，５０．６０はサブマウント、５１．６１は
第１の平坦部、
５２．６２は第２の平坦部、
５３．６３は垂直壁、
５３Ａ、６３Ａはメタライズ膜、
６５は角柱、
６６．６７はストッパ、
７０は回路基板をそれぞれ示す。
１０ °半導体ドーザ
Ｉ＋、＋２・臂り面
！３： 電極
２０°モニフ出臂左１（ケ
２１、す′Ｌ面
２３ 電稀
第１の発明の図
第 １ 図
ＭＬ ＋７ブ７ウシ１
ｂＳ、西オ七
６６ ； スト・ンパ
２Ｑ：干二ＺＦｆｌ＋尤を乎
昇２Ｆ発明の図
第 ？ 図
１０ 子連り本Ｌ・−サ
１０ 五ニタ刷＋オい亭工
１１、／２：／発九面
ｚｌ ＋丸面
１３．２３ 雷７．極
第
図Fig. 1 is a diagram of the first invention, (a) is a side sectional view, (b) is a plan view, and Fig. 2 is a diagram of the second invention, (al is a perspective view of the submount, 0) ) is a side sectional view, and FIG. 3 is a sectional view of a conventional example. In the figure, 1 is an optical transmission system, 2 is a lens, 3 is an optical fiber, 4 is a ferrule, and 5 is a holder
10 is a semiconductor laser, 11.12 is a light emitting surface,
13. 23 is an electrode, 20 is a monitor light emitting element, 30
is the case, 31 is the case bottom plate, 32 is the side wall,
15.25, 50.60 are submounts, 51.61 is the first flat part, 52.62 is the second flat part, 53.63 is the vertical wall, 53A, 63A are the metallized films, 65 is the prism, 66 .67 indicates a stopper, and 70 indicates a circuit board. 10° Semiconductor dozer I+, +2・Bend surface! 3: Electrode 20° Monif protrusion left 1 (Ke 21, S'L side 23 Denki first invention figure 1 ML +7 bu 7 ushi 1 bS, west o 7 66; strike 2Q: kanji ZFfl + 尤也上2F Invented figure No. ? Figure 10 Children's book L・-sa 10 Five-nit printing + Oitei 11, /2: /9-face zl + Round surface 13.23 Lightning 7. Pole Diagram
Claims (1)
投入する半導体レーザ（１０）と、該半導体レーザ（１
０）の作動を監視するモニタ用発光素子（２０）とを、
ケース（３０）に収容したモジュールにおいて、該ケー
ス（３０）の側壁（３２）に該光伝送系（１）が装着さ
れ、 第１の平坦部（５１）と、第２の平坦部（５２）と、該
第２の平坦部（５２）の端部に該第１の平坦部（５１）
に対向して設けた垂直壁（５３）とを備えたサブマウン
ト（５０）が、ケース底板（３１）に固着され、該半導
体レーザ（１０）が、一方の発光面（１１）を該光伝送
系（１）に対向して該第１の平坦部（５１）に搭載され
、該モニタ用発光素子（２０）が、受光面（２１）を該
半導体レーザ（１０）の他方の発光面（１２）に対向し
て、該垂直壁（５３）に搭載されたことを特徴とする半
導体レーザモジュール。 〔２〕半導体レーザ（１０）が搭載される第１の平坦部
（６１）と、モニタ用発光素子（２０）の下部側面が当
接する第２の平坦部（６２）と、該第２の平坦部（６２
）の端部に該第１の平坦部（６１）に対向して設けられ
、受光面（２１）を該半導体レーザ（１０）の他方の発
光面（１２）に対向した状態でモニタ用発光素子（２０
）が搭載される垂直壁（６３）とを、備えたサブマウン
ト（６０）であって、 該第１の平坦部（６１）と該第２の平坦部（６２）との
段差が所定の高さであり、 該第１の平坦部（６１）に、該半導体レーザ（１０）の
該モニタ用発光素子（２０）側の発光面（１２）の両サ
イドが当接する一対の角柱（６５）と、該半導体レーザ
（１０）の選択した側面が当接するストッパ（６６）と
を有し、 該第２の平坦部（６２）に、該モニタ用発光素子（２０
）の選択した側面が当接するストッパ（６７）を有する
ことを、特徴とする請求項１に記載の半導体レーザモジ
ュール。[Scope of Claims] [1] An optical transmission system (1), a semiconductor laser (10) that inputs an optical signal to the optical transmission system (1), and a semiconductor laser (10) that inputs an optical signal to the optical transmission system (1).
0) and a monitor light emitting element (20) for monitoring the operation of the
In a module housed in a case (30), the optical transmission system (1) is attached to the side wall (32) of the case (30), and has a first flat part (51) and a second flat part (52). and the first flat part (51) at the end of the second flat part (52).
A submount (50) is fixed to the case bottom plate (31) and has a vertical wall (53) provided opposite to the submount (50), and the semiconductor laser (10) uses one light emitting surface (11) as the light transmitting surface. The monitor light emitting element (20) is mounted on the first flat part (51) facing the system (1), and the light receiving surface (21) is connected to the other light emitting surface (12) of the semiconductor laser (10). ), and is mounted on the vertical wall (53), facing the semiconductor laser module. [2] A first flat part (61) on which the semiconductor laser (10) is mounted, a second flat part (62) on which the lower side surface of the monitor light emitting element (20) comes into contact, and the second flat part Department (62
) is provided at the end of the semiconductor laser (10) to face the first flat part (61), and a light emitting element for monitoring is provided with the light receiving surface (21) facing the other light emitting surface (12) of the semiconductor laser (10). (20
) on which a vertical wall (63) is mounted, the step between the first flat part (61) and the second flat part (62) being at a predetermined height. A pair of prisms (65) on which both sides of the light emitting surface (12) of the semiconductor laser (10) on the monitor light emitting element (20) side are in contact with the first flat part (61). , a stopper (66) with which a selected side surface of the semiconductor laser (10) comes into contact;
2. The semiconductor laser module according to claim 1, further comprising a stopper (67) against which a selected side surface of the semiconductor laser module (67) abuts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158212A JPH0450903A (en) | 1990-06-15 | 1990-06-15 | Semiconductor laser module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2158212A JPH0450903A (en) | 1990-06-15 | 1990-06-15 | Semiconductor laser module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0450903A true JPH0450903A (en) | 1992-02-19 |
Family
ID=15666734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2158212A Pending JPH0450903A (en) | 1990-06-15 | 1990-06-15 | Semiconductor laser module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0450903A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6036375A (en) * | 1996-07-26 | 2000-03-14 | Kyocera Corporation | Optical semiconductor device housing package |
| JP2002158392A (en) * | 2000-11-22 | 2002-05-31 | Furukawa Electric Co Ltd:The | Semiconductor, laser module and manufacturing method thereof |
| JP2003023203A (en) * | 2001-07-05 | 2003-01-24 | Furukawa Electric Co Ltd:The | Apparatus for soldering mounting base for semiconductor laser element and method for manufacturing semiconductor laser module |
| JP2013140259A (en) * | 2012-01-05 | 2013-07-18 | Ntt Electornics Corp | Receiving package for flat plate arrangement, optical module, and manufacturing method of receiving package for flat plate arrangement |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226989A (en) * | 1985-04-01 | 1986-10-08 | Mitsubishi Electric Corp | Dual-in-line package type laser diode module |
| JPS62169487A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Photoelectronic device |
| JPS62234390A (en) * | 1986-04-04 | 1987-10-14 | Nec Corp | Semiconductor laser equipment |
-
1990
- 1990-06-15 JP JP2158212A patent/JPH0450903A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61226989A (en) * | 1985-04-01 | 1986-10-08 | Mitsubishi Electric Corp | Dual-in-line package type laser diode module |
| JPS62169487A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Photoelectronic device |
| JPS62234390A (en) * | 1986-04-04 | 1987-10-14 | Nec Corp | Semiconductor laser equipment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6036375A (en) * | 1996-07-26 | 2000-03-14 | Kyocera Corporation | Optical semiconductor device housing package |
| JP2002158392A (en) * | 2000-11-22 | 2002-05-31 | Furukawa Electric Co Ltd:The | Semiconductor, laser module and manufacturing method thereof |
| JP2003023203A (en) * | 2001-07-05 | 2003-01-24 | Furukawa Electric Co Ltd:The | Apparatus for soldering mounting base for semiconductor laser element and method for manufacturing semiconductor laser module |
| JP2013140259A (en) * | 2012-01-05 | 2013-07-18 | Ntt Electornics Corp | Receiving package for flat plate arrangement, optical module, and manufacturing method of receiving package for flat plate arrangement |
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