JPH0450690A - Semiconductor radiation detector - Google Patents

Abstract

PURPOSE:To obtain an inexpensive detector of high accuracy by changing over the voltage applied to a semiconductor substrate having a bond for forming one depletion layer. CONSTITUTION:When a changeover switch 41 is closed, a current flows to semiconductor radiation detector from a DC power supply 2 through a voltage dividing resistor 31 to form a depletion layer 71. When a changeover switch 42 is closed, a depletion layer 72 is formed and, when a changeover switch 43 is closed, a depletion layer 73 is formed. As mentioned above, by utilizing that the sizes of the depletion layers 71 - 73 are different by the difference between the voltages divided by voltage dividing resistors 31 - 33 and applied to the semiconductor radiation detector 1, incident radiations 5 different in energy range are converted to electric signals by amplifiers 6 and transmitted to the measuring device of the next stage.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor radiation detection device used for radiation measurement in a place where radiation is handled, such as a nuclear power plant.

[Conventional technology]

FIG. 3 is a block diagram showing a conventional semiconductor radiation detection device disclosed in, for example, Japanese Utility Model Application Publication No. 63-60977. In the figure, (1) is a semiconductor radiation detector, (2) is a DC power supply for applying DC voltage to the semiconductor radiation detector (1), and (5) is the incident radiation that enters the semiconductor radiation detector (1). , (6) is the amplifier, (8) is the P-type substrate of the semiconductor radiation detector (1), and (9) is the semiconductor radiation detector (1).
), (71) to (73) are the depletion layer formed in the P-type substrate C8), (101) is the + side electrode of the semiconductor radiation detector (1), (,102) is the semiconductor radiation detection Negative electrode of device (1), (111) and (112)
is the area of the semiconductor radiation detector (1).

Next, the operation will be explained.

When a voltage is applied from the DC power supply (2) between the + side electrode (101) and the - side electrode (102) of the semiconductor radiation detector (1), the area (111), ( 11
Due to the difference in 2), the extensions of the depletion layers (71) to (73) formed in the P-type substrate 18) differ. Then, when the incident radiation (5) enters the semiconductor radiation detector (1),
Since the lengths of the depletion layers (71) to (73) are different, the depletion layers (
71) to (73) detect radiation having different energy ranges and send them to the amplifier (6).

[Problem to be solved by the invention]

Since the conventional semiconductor radiation detection device is configured as described above, there is a problem that a plurality of bondings must be made in one semiconductor substrate, which requires advanced technology.

This invention was developed to solve the above problems, and provides a semiconductor radiation detection device that can detect radiation in different energy ranges using only a semiconductor radiation detector having a junction for forming a depletion layer. The purpose is to obtain.

Means for Solving cmii] The semiconductor radiation detection device according to the present invention is capable of forming different depletion layers at the junction by switching the voltage applied to the semiconductor substrate having a junction for forming one depletion layer. It detects radiation with different energy ranges.

[Effect]

The semiconductor radiation detection device according to the present invention detects radiation having different energy ranges by changing the depletion layer formed within the semiconductor substrate by switching the voltage applied to the semiconductor substrate.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a semiconductor radiation detector, (2) is a DC power supply, (31) to (33) are voltage dividing resistors that divide the voltage of the DC power supply (2), and (41) to (43) are voltage dividers. Piezoresistance (3
1) to (33) are the changeover switches that allow current to flow and divide the voltage. +8) is the P-type substrate of the semiconductor radiation detector (1), (9) is the n-region formed by implanting impurities into the P-type substrate 18),
101) is the + side electrode of the semiconductor radiation detector (1), (1
02) is the - side electrode of the semiconductor radiation detector (1).

As described above, the semiconductor radiation detector (1) can be constructed with one type of impurity concentration and only one junction! 2, the semiconductor radiation detector (1) can be manufactured more easily and at lower cost than conventional ones.

Next, the operation will be explained using Fig. 2 (Al-(0). Fig. 2 false). ,
A current flows through the semiconductor radiation detector (1), and the depletion layer (71
) can be done. Similarly, in Figure 2 (Bl, the changeover switch (
42) is closed, a depletion layer (72) is formed, and in FIG. 2 (0), when the changeover switch (43) is closed, a depletion layer (73) is formed. As mentioned above, the size of the depletion layers (71) to (73) differs depending on the voltage divided by the voltage dividing resistors (31) to (33) and applied to the semiconductor radiation detector (1). Incident radiation with different energy ranges (5)
can be detected by a semiconductor radiation detector (1), converted into an electrical signal by an amplifier (6), and transmitted to a next-stage measuring instrument (not shown).

In addition, by adjusting the resistance values of the voltage dividing resistors (31) to (33), the thick formulas for the depletion layers (71) to (73) can be changed, resulting in highly accurate results. In the above embodiment, voltage dividing resistors (31) to (33) are arranged in parallel, but for example, as shown in FIG. 4, voltage dividing resistors (31) to (34) are arranged in series. In this case, the sizes of the depletion layers (71) to (73) are different as shown in FIG. 5 (Al-(0)), and the same effect as in the above embodiment can be obtained. play.

Furthermore, instead of using the voltage dividing resistors (31) to (33), a plurality of DC power supplies (2) with different voltages may be used to switch the voltage applied to the semiconductor radiation detector (1). Any configuration may be used as long as it is possible.

〔Effect of the invention〕

As described above, according to the present invention, the semiconductor radiation detection device is configured to switch the electric current Ff applied to the semiconductor substrate having a junction for forming one depletion layer, so the device can be made inexpensive, and This has the effect of obtaining highly accurate products.

[Brief explanation of drawings]

FIG. 1 is a circuit diagram of a semiconductor radiation detection device according to an embodiment of the present invention, FIGS. 2(C) to (C1 are circuit diagrams for explaining the operation of the semiconductor radiation detection device of FIG. A configuration diagram showing a semiconductor radiation detection device, FIG. 4 is a circuit diagram of a semiconductor radiation detection device according to another embodiment of the present invention, and FIG. 5 +A1 to (○) are for explaining the operation of the semiconductor radiation detection device in FIG. It is a circuit diagram. In the figure, (1) is a semiconductor radiation detector, (2) is a DC power supply, (31) to (33) are voltage dividing resistors, and (41)
~ (43) is a changeover switch, (5I is incident radiation, (6
) is an amplifier, and (71) to (73) are depletion layers. In addition, the same reference numerals in the figures indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1! Zeng Elephant Figure 3 Figure 4

Claims (1)

[Claims] It is characterized by comprising a semiconductor substrate having a junction for forming one depletion layer, and detecting radiation having different energy ranges by changing the voltage applied to the semiconductor substrate and forming different depletion layers at the junction. Semiconductor radiation detection device.