JPH04505519A - Data storage for magnetic bubble memory - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Field of Data Storage Invention for Magnetic Bubble Memory The present invention relates to digital magnetic bubble memory, and more particularly to magnetic bubble memory. Concerning data storage for memory.

Conventional technology In the industry, data storage for magnetic bubble memory (U, S, A41 62537), which has an easy magnetization axis perpendicular to its surface. comprising a non-magnetic substrate on which a layer of the axle is magnetically disposed; Interconnected data storage registers are arranged, and the hole bubbles are increased. Magnetic bubble readout and nucleation device mutually separated from other conductive layers by force structure consists of Each layer is energized by its own power source and magnetically biased. Complete data storage will be located at Athfield.

The current flowing through the conductive layer creates a local magnetic field at r+ of the bubble-increasing structure hole, and this hole Generates a magnetic bubble increase, i.e. a bubble increase field. Local magnetic field is magnetic When opposed to a bias field, the region that attracts magnetic bubbles is magnetically uniaxial. Formed in the layer of That is, a magnetostatic trap is formed.

AC currents in these layers produce magnetostatic trap movement along the holes. to move the trap along the magnetic bubble.

The depth of the magnetostate trap is sufficient to ensure stable magnetic bubble growth. The current in the layer must be strong enough to obtain a high degree of stability. The magnetic-axial layer is Electrically conductive layers with magnetic bubble propagation structures designed to be insulated from each other magnetic intercable data storage device, magnetic bubble readout device and nucleation device. It's covered. Each conductive layer is itself energized by a power source. magnetic The circuit consists of permalloy applied bubble propagation structure, this application is due to its low resistance. The drag effectively shortens the length of the magnetic field lines and thus increases the bubble propagation group. on conductive layer The coating of the bubble propagation structure along with the permalloy film in the frontage area of the conductive layer bend the film at damage the performance of the equipment. Carrying permalloy film to avoid such bends The surface must be planarized, which can be done by filling the openings with a specific dielectric. achieved. Flattening is a rather complex operation.

Additionally, during this process known in the art, data storage "hard" magnetic bubbles are must be suppressed in the magnetic-axial layer by ion implantation. Ion implantation is magnetic - A magnetic film is formed on the surface of the axial layer, and this film has planar magnetic anisotropy. , which reduces bubble propagation groups. Moreover, all of these are data storage devices. Complicating design and manufacturing.

Disclosure of invention The purpose of the present invention is to eliminate the negative effects on magnetic bubbles by eliminating the venting of the magnetic circuit. to prevent the generation of undesirable vertical components of the magnetic field that can cause noise and impair data storage performance. The purpose of the present invention is to provide data storage for magnetic bubble memory. This is the data Simplify the structure and manufacturing of the storage.

This is achieved by: Magnetic easy axis perpendicular to the surface and planar magnetic anisotropy A magnetic substrate containing a non-magnetic substrate equipped with a magnetically unidirectional layer having a film-like magnetic circuit with According to the present invention, in a data storage for an air bubble memory, magnetically uniaxial The layer includes a data storage register and a magnetic bubble magnetically interconnected thereto. successively and the forming device (made of mutually insulated conductive layers with a bubble progressing structure) Each layer is connected to its own power supply), and the magnetic circuit is connected to a non-magnetic substrate and located between the uniaxial layers.

It has a crystal lattice constant that matches that of the non-magnetic substrate material (Y, La , Gd) s (PeGa) so, magnetic circuit of two composition ferrite magnetic layers It is advantageous to manufacture.

The present invention creates a memory that is fast, compact, low power consumption, and easy to manufacture.

Drawing description These and other objects and advantages of the invention will be apparent from the following detailed description of the embodiments, with reference to the drawings. It will become clearer in the morning.

FIG. 1 shows a schematic diagram of data storage of a magnetic bubble memory according to the present invention, FIG. 2 is an enlarged longitudinal cross-sectional view of fragment A in FIG.

Preferred embodiments of the invention The data storage for magnetic bubble memory of the present invention is data storage 1 (Figure 1) , bubble succession device 2, bubble nucleation device 3, film-like magnet with planar magnetic anisotropy The magnetic circuit 5 includes a non-magnetic substrate 4 on which a magnetic circuit 5 is mounted.

In a preferred embodiment, the magnetic system 5 is (Y, La, Gd) 3 (F e, Ga) is a film of ferrite garnet with a composition of so +□, and its crystal lattice is The child period matches that of the nonmagnetic substrate 4. The thickness h) of the magnetic circuit 5 is approximately 0. It is 1 μm.

Data storage for magnetic bubble memory has a magnetic bubble and easy magnetization axis magnetically consists of an axle layer 6 and a dielectric layer 7, whose surfaces are perpendicular to the surface thereof. magnetic Typically, the axle layer 6 is in the form of two mutually insulated layers with the data storage register 1 ( That is, a magnetic bubble readout layer is provided on the conductive layer 8, dielectric layer 9, and conductive layer 10). and a nucleation device 2.3.

The data storage is placed in a constant bias magnetic field H (the source of which is not shown). Guidance AC power sources 11 and 12 are connected to the sides of the electrical layers 8 and 10, respectively. the other side The surface is connected to a line 13 of zero potential.

The conductive layers 8, 10 have valve propagation structures, e.g. 2), along which a magnetic bubble moves.

The data storage function is generated by a current 1,,I2 at the edge of the hole in the conductive layer 8.10. The magnetic bubble 16 is moved with the help of interaction with the generated local magnetic field. Based on. When these local magnetic fields are opposite to the bias magnetic field, magnetic bubbles An attractive zone or magnetic static trap is formed. conductive layer 8, AC current along I1.10. The passage of I2 causes the magnetic state≠ to pull the trap. to transmit the magnetic bubble uniformly along the edges of the holes 14.15 and along them. I carry it.

Size of bubble propagation field is the electric current in the electrically conductive layer 8 or 10 (FIG. 2) in the space between the gaps 14.15. The length of the magnetic field lines H surrounding the magnetic bubble 16 is directly proportional to the magnitude of the flow I or I2. is inversely proportional to

The presence of the magnetic circuit 5 shortens the magnetic lines of force H, thus causing the bubble propagation structure to Current 1. , increases the bubble propagation field for a given value of I2 (in other words, the same bubble The current is reduced by the size of the bull propagation field).

In the data storage of the present invention, the magnetic circuit 5 of the film is a monocrystalline YIG-based film. The film is characterized by planar magnetic anisotropy and has a magnetically uniaxial layer 6 between the substrate 4 and the magnetically uniaxial layer 6. It has been placed.

Such a design arrangement excludes bends in the magnetic circuit 5 and hides them. to remove the undesirable normal component of the magnetic field and influence the magnetic bubble 16. and impair data storage performance.

The arrangement of the magnetic circuit 5 between the substrate 4 and the magnetically axle layer 6 causes the magnetically axle layer 6 to Provides suppression of "hard" magnetic bubbles inside the to make ion implantation unnecessary. This is also a magnetic bubble flat magnetized ions between the magnetically axle layer 6 and the electrically conductive layer 8 with Enhance the bubble increase field by eliminating the implant layer.

E2 Procedural amendment (formality) %formula% 1.Display of the incident PCT/SU90100037 2. Name of the invention Data storage for magnetic bubble memory 3, corrector Relationship to the incident: Patent applicant 6. Subject of correction (1) In accordance with the provisions of Article 184-5, Paragraph 1 of the Patent Law, the “inventor” and “patent application” in the document “Person” column (2) Power of attorney (3) Translation of description and claims 7, contents of amendment (1) (2) As per attached sheet (3) Translation of the description and claims (no change in content) 8. List of attached documents (1) Amended Article 184-5 of the Patent Act One document pursuant to the provisions of paragraph 1 (2) Power of attorney and its translation: one copy each (3) Translation of the description and claims: one copy each of the international search report

Claims (1)

[Claims] 1. It has a film-like magnetic circuit with a magnetic easy axis perpendicular to the surface and planar magnetic anisotropy. A data storage system for magnetic bubble memory containing a non-magnetic substrate equipped with two magnetically unidirectional layers. In a storage, a magnetically uniaxial layer is used as a data storage register and Magnetically interconnected magnetic bubble readout and nucleation device (with bubble advancing structure) conductive layers that are insulated from each other (each layer is connected to its own power supply) The magnetic circuit is located between the non-magnetic substrate and the magnetically uniaxial layer.