JPH04503734A - Improved equipment for conveying and processing in a pulsating, floating state - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Name: Improved apparatus for conveying and processing in a pulsating, floating state. It is related to equipment that transports and processes wafers in a pulsating and floating state. do.

For example, Applicant's U.S. Patent No. 4,681,776, International Patent Application No. PCT/N L87100003 describes an apparatus by which a wafer is is treated in double suspension, and after treatment, the supplied treatment medium is immediately released. .

These devices have the following serious drawbacks: 1. Because of the continuous discharge, processing media 2. Move the processing medium exclusively laterally along the wafer surface. 3. In the central part of the processing gap, the processing efficiency is low. Processing efficiency is higher than near the negative edge of the buffer; 4. Medium supply groove close to the side of the wafer to keep the wafer in a floating state Because it is necessary to install the processing medium on both upper and lower walls, processing efficiency decreases; 5. Sending a gas phase medium to the edge of the wafer and performing non-contact wafer processing; Because the wafer must be rotated, the media supply to the vertical walls of the processing chamber channels have to be provided; and 6. the consumption of gas phase medium is high.

The device according to the invention is intended to eliminate these drawbacks and In this system, during the main part of wafer processing, the processing medium is Temporarily seal the processing chamber to prevent wafers from escaping through the surrounding discharge passageway. It is characterized in that it includes means for holding the carrier in a floating state.

Furthermore, for such purposes, processing as the central section of the chamber block is The walls of the processing chamber vibrate slightly in the vertical direction due to the vibration effect, and the wafer processing There is a device that widens or narrows the image processing gap next to the wafer during processing. .

Preferably such wall is the upper wall of the processing chamber.

Furthermore, the processing chamber is located between both chamber blocks, and in a preferred example The processing chamber is located in the central recess on both sides of the parchamber block, and its height is It corresponds to the sum of the wafer thickness and the height of the upper and lower processing gaps.

Additionally, some flexible membrane sections are placed along the processing chamber! death , the central vibrating wall laterally connects to the outside of the chamber plotter, and its outside section The wall section of the section extends horizontally laterally and functions as a sealing wall.

In addition, the upper wall of the lower chamber plotter has a recess surrounding the periphery into the processing chamber. an ambient discharge along which at least one medium discharge channel is connected; Extending downwards by the formation of a passageway, this discharge passageway extends through the surrounding membrane section. The direction is located laterally beyond.

In this way, the processing chamber sealing system includes at least two sealing systems. one extends laterally and temporarily extends outside the membrane section and into the processing chamber. An inner seal section located between the surrounding discharge passageway sealing off the chamber and a second seal section connects the processing chamber and the discharge passageway beyond the discharge passageway. Located laterally, shielded from outside air.

The pulsating action of the chamber is as a result of the significant difference in pressure in the chamber. It is very sufficient that the processing medium is overpressured during processing.

In addition, a negative pressure is maintained in the wafer processing funnel and discharge passageway, and Prepare for release of leaking process media.

The top wall of the lower chamber block is lined with Teflon PFA or PTFE. Synthetic materials such as

As far as possible, this lining should not be deformed during wafer processing. Minimize the vertical thrust on the rack as much as possible.

Thus, overprescription in the lower thrust chamber of the lower chamber block The shear shall be slightly elevated above the processing medium in the processing chamber.

Therefore, during processing, the chamfer through at least one fine leakage gap Access from the chamber to the discharge passage is unobstructed.

Due to the high frequency vibration, the emission is only 0.1 am'' and then the treatment The pressure inside the chamber is significantly reduced, which may interfere with uniform wafer processing. An unavoidable phenomenon occurs.

In addition, process contaminants cross the discharge path and enter both chamber blocks laterally. , must be prevented from being impossible to eliminate.

Other favorable features include a gas lock compartment mechanism laterally beyond the discharge passageway. During wafer processing in the processing chamber, the pressure of the gaseous medium is The pressure is maintained at overpressure compared to the pressure in the processing chamber.

In addition, an upper chamber bubble is located between the discharge passageway and the gas phase lock compartment. Locking cylindrical sealing off wall sealing of lower chamber block Corresponding to the off-section, a second seal section is created during wafer processing.

In addition, the upper wall of the lower chamber block is connected to the gas outlet under the sealing section. Extends laterally beyond the storage compartment and connects the seal assembly of the upper chamber block. During wafer processing in a sealed chamber, both chambers forming a third peripheral seal section between the chamber blocks;

In this way, after supplying the processing medium to the processing chamber at very low pressure, a small The gas phase medium enters this chamber from the discharge passage via at least one leak gap. During at least a portion of wafer processing, this discharge path includes A resher is maintained that determines the average overpressure of the media in the processing chamber. Almost the same thing as the Shah is required.

Furthermore, during the process, during the depressurization stroke of the vibrating wall, air is The phase medium enters the narrow outlet section of the peripheral buffer chamber beside the membrane member and During the wall compression stroke, the overflow in the processing chamber is The bar pressure first causes the gaseous medium to return from the outlet section to the discharge passage. It will be done.

゛In addition, at least the wafer processing leap, gas lock compartment If so, an overpressure is maintained above the pressure in the discharge passage.

Additionally, the device can be connected to the second cylinder from the gas lock compartment by means of a pressure valve. discharge that leaks from at least one leak gap in the section into the discharge passage. Ensure that the overpressure of the media in the exit channel does not become unacceptably high. The structure is as follows.

Due to the higher pressure in the gas lock compartment relative to the discharge passage, A gas lock is formed and prevents the medium from escaping from the discharge passage to the outside.

Replacing used processing media in the processing chamber with freshly supplied processing media. During this period, the used media is sent to the discharge passage, where the pressure is temporarily reduced. and negative pressure is generated.

In addition, if necessary, in the lower thrust chamber of the lower chamber block. When the pressure of the overpressure of the media decreases, at least the compression stroke At the end of the process, the lower chamber blocks do not approach the upper chamber blocks.

In this way, the increased pressure of the newly supplied processing medium and the Due to the low frequency vibrations at the end of the compression stroke, the lower chamber block It descends only slightly, transporting the used processing media from the processing chamber to the discharge passageway.

As a result, on the one hand, a gas lock is maintained and the processing medium leaks into the gap On the other hand, a mini-vortex flow in the gas medium that advances to the top of the narrow discharge passage can be used to remove liquid particles and submicron contaminants from the discharge passageway. Wear.

The non-deformable metal core of the lower chamber block is lined with Teflon. The core extends beyond the third seal section and covers most of the block. It becomes almost a fully supporting surface.

In this way, the thrust of the thrust medium in the thrust chamber is transferred to the lower chamber block. acts uniformly on the central surface of the block, but causes unacceptable deformation of the block. not give.

Furthermore, prior to the intensive supply of fresh processing medium to the processing chamber and/or At the end of the total processing of the With a concentrated supply of immersion medium, the , the pressure in the processing chamber increases at the same time, and the lower chamber block moves slightly downward. The spent processing medium is removed from the processing chamber along with the liquid particles sprayed into the gas phase medium. Get kicked out.

At the same time, an excess of gaseous media, such as rinsing media, is removed from the gas lock compartment. The used waste is then sent to the discharge channel through the channel to which the discharge channel connects. ideal for removing dirty media.

At the end of the compression stroke, which is 10% of the pulse time, the main Barrel evacuation takes place, refilling the gas lock compartment and draining from the evacuation passage. The medium can be ideally discharged.

As a result, the dimensions of the exhaust passage and gas lock compartment are extremely Maximum seal during wafer processing in small, sealed processing chambers. surface is available and both chamber blocks are free from impermissible forces.

During processing, the upper chamber wall moves downward, directing the processing medium into the upper processing gap. from the wafer edge, thereby forcing the media through the processing gap next to the wafer edge. It then descends into a buffer compartment on the underside of the membrane.

The upper section of the vertical wall of the processing chamber is rounded and The media ejected from the top hits the wafer edge and is moved along the edge. movement and, as a result, an intermediate position without physical contact of the wafer in the processing chamber. help maintain position.

The lower chamber block is connected to the wafer through a layer of compressible media in the lower processing gap. To uniformly support the fur and make the entire surface non-contact.

The upper process is performed by applying a compressible medium to the wafer in the lower process gap. By slightly vibrating the chamber walls in the vertical direction, the media can be maintained even in the lower processing gap. The medium is flowed in a direction perpendicular to the wafer surface.

In this way, processing on all sides of the wafer, such as cleaning, can be accomplished. Wear.

In addition, in the upper processing gap, processing using active media, for example, Etching, developing, stripping processing can be performed, and at the same time, In the sub-processing gap, the wafer can be dehydrated, e.g. by means of deionized water. It can be used to clean the bottom surface of the machine.

Instead of supplying a combination of gas and liquid phase media, a mixture of high and low boiling point liquids and determine the quality of the vaporizing medium based on the pressure and temperature of the bath.

Additionally, gas-phase media or liquid-phase media alone can be used.

It is extremely important to limit the amplitude of vibrations in the chamber walls as much as possible, for the following reasons: It is as below.

1. Avoid excessive thrust acting on the Teflon lining of the lower chamber block. 2. In the lower processing gap downward to the lower chamber block. Limit the top thrust of the media to prevent leakage of media from the chamber. to prevent the formation of bumps; 3. To prevent unacceptable vibrations of the module itself.

Additionally, a method for directing the processing medium to or from the wafer is provided. For optimal use of vibration energy, the vibrating wall should be placed as close to the wafer as possible. Preferably close.

The reason is; 1. Maximum pressure filling of image processing gap; 2. Shorter wafer processing time due to extremely high vibration frequency; 3. To eliminate the negative effects of wafer processing due to wafer deformation.

Accordingly, as another advantageous feature, the present invention provides a means for oscillating the vibrating chamber walls. including means for moving the object by more than the width of the object.

This method allows pressurized filling of at least one medium into the processing chamber and A chamber protector seals the processing chamber and compresses the gaseous medium in the chamber. This is done by the downward movement of the walls of the upper chamber which vibrate.

Additionally, during wafer processing, the reciprocating and vibrating upper chamber walls are Change the position in the vertical direction and change the wafer processing.

In addition, this device has a pulsator installed in the vertical direction, regardless of reciprocating motion or vibration. (including means for moving the upper channel).

Furthermore, the thrust compartment is connected with the supply, discharge of the medium, and the By adjusting the pressure of the medium in the compartment, the height of the compartment can be varied and Move the pulsator installed in the upper channel in the order perpendicular to the wall. Give the next position.

Furthermore, the pressure of the medium in the thrust compartment is jointly determine the required average pressure of the media.

Furthermore, the pressure of the medium in the pulsator chamber increases the pressure of the medium in the processing chamber. jointly determine the required average pressure of

Additionally, during wafer processing in the processing chamber, access to the lower chamber wall is The parallel settings of the upper chamber walls are automatically determined.

Additionally, such parallelism is important for the pulsator chamber and thrust compartment members. This is achieved by compressed media within the

Additionally, a damper is placed between the top of the pulsator and the module housing. and absorb the vibrations of the pulsator.

Furthermore, for that purpose, both the thrust compartment and the pulsator chamber The medium within is a gas phase medium.

Additionally, the gas phase medium within the pulsator chamber also acts as a coolant, Supply and discharge lines for the medium are provided.

Additionally, this device requires that the thrust compartment above the electric pulsator It also functions as a pulsator, supplying and discharging the medium sequentially to generate electrical power as well as the lower wall. Move Luceta reciprocally.

Additionally, frequency and amplitude modulation to the upper chamber walls can be applied to low, medium, and high frequency oscillations with variable large, medium, and small amplitudes.

In addition, its yoke is used as an electric pulsator, and the upper chamber wall This yoke is integrated with the pulsator and this yoke reduces the Change the upright position.

The upper chamber wall directly above the wafer vibrates back and forth, allowing upper and lower processing The already pressurized medium in the gap is raised to a higher average pressure and the wafer -increases the acting force on

As a result, in the processing chamber, the downward direction acting on the lower chamber block is The top thrust of the medium is blocked, and with each pulse the wafer is Due to the compressed medium in the gap, it is lowered slightly fairly instantaneously and the lower processing The compression of the media in the processing gap is reduced.

downward thrusting of the processing medium in the lower processing gap by pressure filling; The difference in the upward thrust of the thrust medium in the thrust chamber is almost negligible. resulting in unacceptable deformation thrusts that deform the processing chamber seal section. Can be removed.

Previous spent processing media during wafer processing in extremely narrow processing gaps Supplying the medium to exchange the medium supply pressure at the central orifice These orifices have high pressures and velocities that require high force to process wafers. It will not work well if it cannot be spread evenly.

By pressurized filling and lowering the upper chamber to reduce the volume of the processing chamber. , a central medium supply at high pressure is no longer necessary.

In addition, due to the increased pressure of the medium in the thrust compartment, the upper The chamber wall is further lowered to drain and replace the processing medium from the image processing gap. .

The lower chamber block is at least localized at increased pressure of the medium in the processing chamber. It is partially lowered, at which point the processing medium is evacuated from the chamber.

The lowering of the lower chamber block is carried out in the lower thrust chamber of this block. supported by a simultaneous reduction in the upward thrust of the medium.

The media ejected from the processing gap is transferred to the wafer etching gap in a preferred manner as follows: from the relatively wide chamber compartment of the azalea fence to the discharge gap. It will be done.

In addition, the reciprocating upper chamber walls provide a concentrated supply of the exchange medium. be moved to a higher position.

In addition, due to the pressure reduction of the medium in the thrust chamber, it can be used as a rinsing medium. The initially fed portion of the media is leaked through the leakage gap formed from the processing gap to this. It is discharged via the chamber into the surrounding discharge passage.

Furthermore, after supplying new medium to the processing gap, the upper wall again The wafer is lowered to the processing position and the same next wafer is processed.

It is desirable that vibrations in the device be as low as possible.

A preferred next method for this purpose involves transporting the wafer and/or The goal of wafer processing is to speed up the vibration at the vibration frequency.

Furthermore, in order to remove minute contaminants from the minute valleys on the wafer surface, Both in the upper processing gap take advantage of the maximum pressure difference of the processing medium to - Provides the best cleaning action against.

A preferred feature for this purpose is to reduce the average height of the upper processing gap during processing. Seal the gap using the outer section of the wafer as a sealing wall. Then, individual processing can be performed in the gap.

Combining the wafer lagging effect in this manner, the upper process gap and lower between the processing gap and the large pressure without affecting the lower chamber block There will be a difference.

In addition, the wafer lagging effect also increases the compressive stroke of the upper chamber wall. During the compression period, pressure is applied to the upper processing gap at less than half of the closing time. A difference occurs.

Pressurized filling of the processing chamber allows the use of only liquid processing media.

At the upper processing location on the upper chamber wall, the liquid medium collects in this upper gap. Injected centrally.

This causes the media to be ejected from the upper processing gap into the evacuation passage. The liquid medium is filled into the top.

In the next preferred method, during the upward expansion stroke of the upper chamber wall, the wall , the wafer rises quickly and, due to its mass, remains behind and becomes a fine particle in the liquid medium. Vacuum bubbles are generated, and these also create small valleys on the top surface of the wafer. It also exists inside.

Additionally, during the compression stroke, the liquid medium travels toward the wafer at high speed and first onto the wafer. As it rises, it exerts a sufficient effect on the boundary layer directly above the wafer.

As a result, this microscopic boundary layer dissolves and the contaminant-laden medium is ejected from the valley. It will be done.

This method of cleaning wafers is extremely aggressive on the surface of the wafer. Cleaning will be carried out.

Comparable to the high pressure of the thrust medium in the lower thrust chamber of the lower chamber block To increase the processing pressure, the professional PFA seal membrane section The yarn is reinforced with a layer of tensile resistant yarn.

The total amount of processing medium in the image processing gap is severely limited for <6” wafers. However, the amount is only 0.05 to IC113.

This exchange of processing media for wafer processing.

Several times, the consumption of media, especially that of liquid media, is extremely low, which is explosive. This is extremely important regarding the use of volatile, hazardous, and highly active liquids.

Using a liquid medium in the lower thrust chamber of the lower chamber block as part of the wafer supply and discharge system to the processing chamber, and , the block can be placed in the required vertical position for wafer processing. Ru.

In addition, whether the wafer has flat oriented sides or not has double floating wafer without negatively affecting the condition and lateral wafer non-contact position. Uniform wafer processing is achieved by rotating the wafer without adding thrust media. can get.

Furthermore, the apparatus processes the wafer to be processed in a suspended state from the wafer transport member. The method includes means for moving the wafer to a central position relative to the processing chamber.

In a preferred construction, the end of the wafer is moved over the lower chamber block. , at least approximately in the central position, as a stop for the wafer. Vertical walls of the chamber are used.

Furthermore, for wafer transport, at least the lower chamber block is temporarily the wafer is in an inclined position, whereby the wafer is combined with the gravitational force of the wafer. and move.

Furthermore, in the final phase of the wafer heading towards this chamber, the upper chamber The wafer wall vibrates and causes a vertical flow of media into the wafer. slow down the speed of

In addition, after wafer processing, the wafer remains suspended in an inclined lower chamfer. The wafer receiver passes through the chamber block and heads toward the receiving section.

The inlet and outlet of the device are, for example, cassettes, such as cassettes in 5HIF boxes. What kind of wafer supply, main processing module, wafer handling, testing, etc. modules for testing, measuring and inspection, as well as robots. It can also be connected to a feeder conveying member.

In addition, the lower chamber blocks share a common access point that forms a tunnel that can be closed at one end. It is mounted together with the upper chamber in a common mounting block.

Furthermore, combinations of modules can be placed in the tunnel.

Furthermore, the tunnel can be connected to the inlet side of the high vacuum module, and this tunnel can be connected to the inlet side of the high vacuum module. The sealing of the channel takes place on the inlet side of the device.

Furthermore, preferred features of the device are in accordance with the description of the drawings set out below.

FIG. 1 shows a wafer conveyor according to the present invention, which has a built-in electromagnetic pulsator. FIG. 3 is a cross-sectional view of the processing device.

FIG. 2 shows the device according to FIG. 1 in which the piezo pulsator is located.

FIG. 3 is a sectional view taken along line 3--3 of the device according to FIG. 1;

Figure 4 shows a ceiling-off structure in which the lower chamber block is co-located with the wafer. reaches the end of the upward rise, and the wafer is in a double floating state. FIG. 3 is an enlarged cross-sectional view of the processing chamber.

FIG. 5 is a cross-sectional view according to FIG. 4 in a sealed-off state of the processing chamber.

Figures 6 to 6° show that at least gas phase media treatment is performed and continuous During the expansion stroke of the phase, the processing chamber with upward movement of the upper chamber. A further enlarged cross-sectional view is shown.

Figures 7 to 7D show that in successive phases the arapar chamber wall is in a compressive stroke. 6A-60 during heating; FIG.

Figures 8A to 8° show a more enlarged chamber cross section and Figure 6 to 6°. The continuous phase of the process is shown.

Figures 9A to 9C show more enlarged chamber cross sections and Figures 7A to 7°. The continuous phase of the process is shown.

Figures 10 to 10E show that during processing, the upper channel Continuous downward movement of the upper chamber wall during the chamber wall expansion stroke FIG. 8 shows a processing chamber according to FIG.

Figures 11 to 11E show the first phase during the compression stroke of the upper chamber wall. 0 to 10E;

Figures 12 to 12E show the successive phases of the upper chamber wall expansion stroke. 11 [showing the chamber according to the figure].

Figures 13 to 13E show the pressure on the upper chamber wall. Figure 12 shows the treatment chamber according to Figures 12-12E during the continuous phase of the contraction stroke;

14 and 14B illustrate the upper-wafer processing gap of the apparatus according to FIG. This figure shows the pressure filling of a liquid medium into a pump.

Figures 15 to 15 show the succession of the chamber wall during the compression stroke. 14A and 14B with a lowered position; FIG.

Figures 16 to 16° are the views of Figures 15A to 1 during the compression stroke of the wall. Figure 2 shows continuous wafer processing of the apparatus in 5° intervals.

Figures 17A to 17° show the flow of liquid into the upper treatment gap of the apparatus according to Figure 1. Indicates pressurized filling of a combination of gas and gas medium.

Figure 18A directs the liquid medium to the wafer as shown in Figure 15C. , showing an enlarged view of the upper processing gap on the processing side of the wafer.

FIG. 188 shows the rupture of the gap according to FIG. 18A, which leaves the liquid medium from the wafer. Show the face.

Figure 19A is a diagram illustrating Figure 18A for delivering a combination of gas and liquid media to the wafer. A cross section of the gap is shown.

Figure 198 shows Figure 18A with the gas and liquid medium removed from the wafer interface. A cross section of the gap is shown.

Figures 20A and 20B show the upper chamber wall in the downward pressurized filling position. Part of the processing chamber according to Fig. 17 during the initial and final phases of the compression stroke of An enlarged cross-section of the layer is shown.

Figures 21A and 218 are Figures 20A and 20B in the upward pressure filling position. Figure 2 shows a diagrammatic processing chamber.

FIG. 22 during the downward movement of the upper chamber wall.

With the pulsating processing medium, move the wafer, which is at an offset position, to the center position, and - shows a more enlarged detail of the processing chamber in which the processing takes place;

FIG. 23 shows the offset position during the upward movement of the upper chamber wall by the treatment medium. The wafer is moved to the center position and the details are shown in FIG.

FIG. 24 shows the timing at which the wafer is fed from the transfer arm to the processing chamber. 2 shows an enlarged detail of the device according to FIG. 1;

Figure 25 shows the first stage in which the front end of the wafer is swiveled upward by a gas cushion. The details are shown in Figure 24.

Figure 26 and 26Bll show the upward and downward expansion strokes of the upper chamber wall. During the directional compression stroke, the back end of the wafer touches the membrane that is present in the membrane. 2 shows a more enlarged view of the supply passageway to the processing chamber in FIG.

Figure 27 shows a processing chamber in which the front end of the wafer is raised within the processing chamber. The front end is shown enlarged.

Figure 28 shows the wafer front near the vertical wall of the chamber as a wafer stop. 27 shows the front end of the chamber according to FIG. 27 with the section raised;

FIG. 29 is according to FIG. 24 with a wafer stopper provided in the processing chamber. Show details.

Figure 30 shows how to lower the block and wafer to the lowest transfer position. A detail according to FIG. 29 in which the fur stops floating.

Figure 31 shows Figure 1 in a form suitable for being placed at the entrance of the main processing module. It is a device by

Figure 32 shows a section of a modified version of the device according to Figure 2 incorporating two processing modules; A longitudinal section is shown in a plane.

FIG. 33 is a cross-sectional view of the device according to FIG. 32 along the line 33--33;

Figures 34 to 34E show the flow to and from the image processing chamber. A position where wafers are continuously conveyed horizontally during feeding and unloading. Figure 32 shows the device according to Figure 32 in a horizontal longitudinal section with .

FIG. 35 shows a 32nd unit connecting the main processing unit to wafer processing under high vacuum. FIG.

Figure 36 shows the delivery of a wafer to and from the processing chamber in an inclined position. 2 is a longitudinal sectional view of the device according to FIG. 1 for use; FIG.

Figures 37 to 37E show the transfer of wafers from the wafer transfer arm to the processing chamber. The continuous phase in which the phase is transferred is shown.

Figures 38 and 38' show the downward compression stroke of the pulsating upper chamber wall. During the upward expansion stroke, the wafer rests against the vertical wall of the chamber. This shows the expansion of the telophase.

Figures 39A-39E show the wafer in position for receiving it from the processing chamber. The direction to the transfer arm indicates the continuous phase to be transferred.

Figures 40 to 40B show pulse-by-pulse data during the start and final phases of wafer transport. The effect of the pulsating upper chamber walls on the wafer with slowdown and acceleration Shown more enlarged.

In FIG. 1, FIG. 2, and FIG. 3, the processing module 12 and the feeding cassette 14 are mainly shown. , a wafer processing system consisting of a receiving cassette 16 and a wafer transport unit 18 A device 10 is shown.

The processing module mainly includes a lower chamber block 20 and an upper chamber block. 22, processing of the wafer 26 in the lower chamber plotter is carried out in the processing chamber. gas lock compartment 48, upper chamber 24, and passageway 28. A pulsator 32 that reciprocates the central portion 34 of the chamber block in the vertical direction; It consists of a thrust chamber 36 for vertical movement of this lower chamber block.

The wafer transport unit 18 that transports the wafer horizontally is located in the support block 40! a transfer body 38, a transfer arm 42 having a wafer-holding block 44, and This transfer arm is connected to a piston 52 that moves within a recess 54 in the support block 40. It consists of a code 46 and two rolls.

Arm 42 is made of PFA and reinforced with metal supports 610. moreover , with an extension 612 extending beyond the block 44 and thereby Thus, the roll unit 614 is located in this extension.

As a result, when the wafer is transported, this roll unit is moved along the guide path of the block 40. move beyond the rack 616 and correct take order of the block 44 in the vertical direction. - The bar and transport position are incorrect.

By means of vacuum thrust, the wafers 26 from the feed cassette are processed. sucked into receiving portion 66 of block 44 for transfer to module 12; Similarly, by means of a vacuum thrust, the wafer is removed from the processing chamber 24. -26- is the wafer of this block for transfer to the receiving cassette 16. It is sucked into the discharge section 68.

In the lower chamber block, a central supply channel 70 for the processing medium 3o is located, and the upper chamber block 22 also has a processing medium 30, a gas medium, or both. A supply channel 72 is located for either or both.

Additionally, supply lines 74, 76 are connected to the gas lock comparator for the supply of gas medium 78. is connected to the component 48. These lines are located at seal block 9o. It is connected to two compartments 618 where the

The lower chamber block 20 consists of a flexible tongue portion 92 and a central portion 88. The block and the upper chamber block 22 are preferably made of Teflon PFA. at least as a lining to provide sufficient protection against the processing medium. provides resistance, thereby causing the lower end of tongue portion 92 to press air against support block 40. - The central portion includes a metal core 88 that does not deform.

This allows the enclosure ring 94 to have an airtight connection and this tongue. The section 92 forms an enclosure laterally.

Processing medium 30 in chamber 24 and thrust medium in thrust chamber 36 During wafer processing with concomitantly increased pressure on body 104, this ring Surround a part of this tongue in an upward direction.

A common discharge passage 28 is located in the seal block 90 via a plurality of lines 120. It is connected to the release compartment 130.

The block 90 with the extension 104 is an extension of the lower chamber block 120. 102 guidance.

The thrust medium 104 that is periodically sent to the chamber 36 is from the central feed channel 106 to the thrust compartment 108. from there via groove 110 to chamber 36.

In this manner, the total column of thrust media 104 is and press it against the upper chamber block 128.

The upper chamber block has a peripheral recess so as to have a central recess as the processing chamber 24. 126 is located below the membrane portion 128.

As a result, the central block portion 34 reciprocates with respect to the outer portion 132 to a small extent. Can be moved.

The P [^ lining 622 as part of the central block portion 34 is also laterally The lateral side of the chain portion 132 serves as a sealing wall with the wafer wall and is unobstructed. Extending from the inlet side 298 to the outlet side 300 of the module 12 .

Within the scope of the invention, this lining can also consist of other suitable materials. .

A number of mini-dovetail groups 630 allow the PFA of the lower chamber block 20 to The lining is anchored to the non-deformable section 88.

This block is manufactured by pressing. This prevents deformation. The lining can be molded at high pressures and temperatures. This is followed by machining of this lining to give it its final shape. It will be held in

Within the scope of the invention, Teflon is sprayed onto the upper chamber block 22. Blocks can be manufactured by applying it to

Additionally, the narrow width of both the discharge passage 28 and the gas lock compartment 38 , the contact surface between the chamber blocks 20, 22 is relatively wide.

At the same time, in the central part of the lower chamber block 20, there is a hole deformed beyond the entire surface. section 98.

Thus, the thrust medium 104 in chamber 36 and the process medium in process chamber 24 The pressure difference between the There are no unacceptable deformities.

PFA seal section and bellows section 88/ of lower chamber block 20 92 is reinforced with a woven layer of stretch resistant material.

In FIG. 1, by means of a surrounding buffer block 666 and adhesive bonding. The thrust comparator is fixed to the bottom of the upper cap 140p and is not sealed. 668 is formed.

Via the nipple 682 this compartment 668 is connected to the supply of gas medium 78. Connected to line 690, this line has a regular valve! be done.

By adjusting the supply of gas medium 78 and its pressure, this compartment Adjustments are made to fill the medium 78 under pressure.

By adjusting the pressure of this medium, the height of this compartment can be adjusted from minimum to preferred. Preferably, the value can be set from less than 0.111 to the highest value, and higher than 0.2ms. Ru.

In this manner, the vertical position of the stator 674 of the electromagnetic pulsator 32 can be adjusted, so that the upper chamber block 34 can be adjusted between the stator and the yoke. It is then fixed to the yoke 684 of the stator via a mini-gap 672 by adhesive means.

The processing medium in the processing chamber is pressurized and charged into the chamber 24 which is sealed off to the desired degree. For filling, gas medium 78 is supplied to thrust compartment 668 and shaken. The block section 34 (as the upper chamber wall) which does not move or vibrate is descend.

The gas medium 78 in this compartment is combined with a buffer block 666. to absorb pulsator vibrations to the module housing 40/132.

The gas medium 78 of the pulsator chamber 142 is connected to the thrust compartment 668. has a pressure approximately comparable to that at .

Average at extremely narrow gap 672 between stator 674 and yoke 684 The pressure approximately corresponds to the pressure of the gas medium 78 in the thrust compartment 668. , which immediately follows this change in pressure.

The height of the gap 672 is determined by the difference between the positive and negative alternating currents generated by the modulator 632. Depends on the electrical energy regarding the difference between.

Therefore, during processing, the height of this gap is approximately twice this amplitude or more. It is.

This method combines the means of pressurized media 78 in the mini-gap to It becomes possible to fill the medium 30 into the processing chamber under pressure.

The medium 78 in the pulsator chamber 142 also serves as a cooler for this pulsator. regulator valve 640 in discharge line 688 The speed of the medium flowing through can be adjusted.

For this purpose, cooling channels 676 are located in the stator 674. Ru.

Thrust compartment 668 and chamber 142, particularly cap 672 Media 78 in and center block section 34 as upper channel wall In combination with this, the upper wall covering the entire wafer surface descends uniformly process gaps across the wafer surface, such as those required for intensive processing of wafers. 174 and 176, respectively (see FIG. 5).

In a sealed-off process chamber where a certain average process pressure has been established, During processing, the Senna 636 disconnects the supply line to the thrust chamber 36. Regulator valve 436 impulse is sent to reduce the thrust in the chamber. The seal off pressure of media 104 is maintained sufficiently high.

The expulsion of processing medium 30 from chamber 24 is accomplished by directing the medium to thrust compartment 668. pulsator 32 and the aba-chamber wall to lower the processing chamber. This is done by additionally increasing the pressure of the treatment medium 30 in the chamber.

Above a certain pressure in said chamber 24, leakage gear between the pro-offs 20.22 a cap occurs at least partially, so that the processing medium is ejected through this They are chased out to passage 28.

Therefore, due to the continuous lowering of the upper chamber wall 34, the processing A large part of the processing medium is expelled from the chamber and for that purpose the upper wall is Preferably, at least in the final phase of the downward movement, the amplitude of the vibrations is reduced. Yes.

Moreover, such expulsion of the processing medium can be achieved through mini-gaps between the stator and the yoke. This can also be done by increasing the height of the top 672 and constantly expanding the positive part of the alternating current. can become.

In Fig. 2, the pulsator chamber 142° inside the pulsator block 69 2, a piezo pulsator 32- is encased in a flexible sleeve.

This creates a sealed-off thrust compartment 668゛. .

This can be achieved by regulating the pressure of medium 78 into this compartment with valve 670. Again, the height of the compartment can be changed from the minimum to the height of the piezo pulsator. The position of the block section 34 can be adjusted by

The pulsator chamber 142' is regulated via a supply line (not shown). regulator valve 638 and gas coolant 78 regulator valve via a discharge line. <Connected with Lube 640, cooling channel 694 is arranged in the piezo pulsator .

Furthermore, the block section 34- is between the coolant channels 698. It is joined to the lower plate of the pulsator.

Here again, the gas medium 78 in the compartment 668 causes the pulsator to Upper chamber walls to absorb and match vibrations for uniform wafer processing and the lower chamber block.

This allows the amplitude of the piezo pulsator to be, for example, at a frequency of 10,000 Hz. This results in a minimum of only 5 μ-.

Additionally, for effective wafer processing, the upper processing gap 174 is In this case, the minimum height must be 15μ or less.

In the case of the magnetic pulsator 32, the lowest possible height of the gap 672 makes it difficult to operate. The history loss between , the electrical energy for the pulsator can be significantly reduced.

Furthermore, the next preferred method for optimal wafer processing and module housing In vibration absorption, at least two pulsators There is a vibration.

Vibrations, including low frequency vibrations, are caused by low frequency, e.g., 1000 Hz alternating current. This can be achieved by changing the positive and negative values.

The intermediate size frequency and amplitude of these vibrations are adjustable in this secondary oscillating fan superimposed vibration as a carrier vibration for high frequency vibration. vibrations modulated in frequency and amplitude.

In FIG. 2, a supply line 700 for processing media 30/78 is shown. this The module functions as an all-side wafer cleaner and dabs while vibrating. Cleaning is performed in the cleaning state.

Due to the lower amount of media required in the upper processing gap, the supply line The inner diameter of the line may be as small as possible, for example, 0.02 mm or less, and this line should be of a sufficient degree. , a liquid medium 30 can be included by capillary action.

Further, a check valve 702 is arranged in the supply line directly above the input lower 2.

Supplying gaseous medium 78 to the supply line through valve 704 allows the processing chamber to The chamber can be pressurized and filled initially, and the finish-off medium 30 can be replaced once. .

Subsequently, after pressurized filling, the first liquid medium 30 is introduced into the supply line by a membrane pump 706. feed.

This is a very limited supply of 10 m53 per second.

This media 30 is directed through orifice 72 to upper processing gap 174. , gas medium 78 is transferred from the gap to the buffer compartment on the side of the wafer edge. Gradually push it out laterally.

During the injection of liquid medium 30 by regulator valve 670, gas medium 78 is The upper chamber is fed to or from the last chamber 668. The vibration of the chamber wall has a low frequency of about 20 hertz and an amplitude of about 30 μ-. It gets bigger every time.

The additional increase in pressure in the upper gap 174 causes the medium to and collected in buffer compartment 184.

The maximum pressure of the medium in this compartment (this is the thrust compartment (determined by the upward thrust of thrust medium 104 of point 36) , the lower chamber block 20 is at least partially lowered beyond the micro dimension. , the medium leaves the buffer compartment through the leak gap created. It is sent to the discharge passage 28.

With such modulated oscillations, ejection occurs frequently.

The upper gap is then completely filled with liquid medium 30, as shown in Figure 15.16. As such, the medium flows and enters the buffer compartment 184.

Media 30 also extends from the buffer compartment to the lower processing gap 176. , where it is mixed with the gaseous medium 78 already present.

For displacement of this liquid medium, via both central orifices 7o, 72 into both gaps. A gas medium 78 is supplied and the pressure of the medium 104 in the thrust chamber 36 The pressure drop of the processing chamber medium causes the lower chamber bubble to be expelled from it. The lock descends under the formation of a surrounding discharge gap.

After evacuation of the medium 30, the membrane pump 708 pumps an aqueous solution, such as deionized water, for example. A liquid medium 30- lacking recessive is injected into the supply line 100 and the orifice 7 2 into the upper processing gap 174.

Check valves 710, 712 connect supply line 702 of gaseous medium 78 to liquid. said via line section 716 in the direction of supply line 706 of media 30 Media flow is blocked.

It is within the scope of the invention to provide a vapor phase displacing medium 78 to the upper gap 174. Instead, the liquid medium 3o- can be sent directly into this gap and replaced with the liquid medium 3o. You can also

In Figure 6.7, the processing chamber 24 is shown enlarged and in Figure 8.9. It is further expanded and detailed.

Here, the center block section 34 vibrates at a high frequency of 5000 hertz. , with a small amplitude of about 20 μm.

In FIGS. 6 and 7A, the lower chamber block 20 prevents the seal off. The processing chamber is opened by supplying media to the thrust compartment 668. -The chamber wall 34 and the pulsator chamber 42 are shown in FIGS. 8A and 9A. As shown, it descends from the upper wafer transfer position.

B B In Figures 6 and 7, the processing channels are shown in Figures 8B and 9B. Pressurized filling of the chamber to the desired level is carried out.

7 and 9B, the compression stroke of the upper chamber wall 34 is shown in FIG. , as shown in Figure 6 and Figure 8B. Then, an expansion stroke of the upper chamber is performed, respectively.

During the compression stroke in the upper gap 174, the highly pressurized processing medium The body 30 is forced to the processing side 190 of the wafer 26 and at the same time The lowering of the wafer causes the media 30 in the lower gap 176 to move below the wafer. is sent to the position side 664.

Based on the wafer lagging effect during the initial phase of the compression stroke, Due to the upward movement of the wafer, the pressure in the upper gap 174 increases significantly. The processing medium is fixed on the wafer (section 20, see FIG. 21A).

Additionally, based on the wafer lagging effect during the initial phase of the expansion stroke, The pressure in the upper gap 174 increases due to the downward movement of the wafer for a short period of time. (see Figure 19B) and the processing medium flows from the micro-boundary layer on the top surface of the wafer. My body runs away.

The minimum height of the image processing gap 174.176 of less than 50μ during processing and the high The vibration frequency allows the wafer edge to move during wafer processing and compression strokes. Said to lateral compartment 184 and buffer compartment 134 The release of the medium from the gap is extremely limited and the outer - only from the gap sections 652 and 654.

During the expansion stroke, the media enters the buffer comparator under overpressure. 134.184 is returned to the gap section 652.654 (See Figure 6B) Figures 8C and 9 are further enlarged in Figures 6 and 7. In Figure C, the upper chamber wall 34 is lowered further and the gap 174,1 The pressurized filling body at 76 is further compressed.

This further anchors the vertical flow of media 30 to the wafer walls 190, 664; After the treatment has been carried out for a predetermined period of time, which penetrates even the ultra-fine valleys 192, the The upper chamber wall 34 descends further, increasing the pressure of the processing medium.

Consequently, at least a lower chamber whose upper wall is parallel to the upper chamber wall 34 The chamber block 2o is lowered and the lower chamber block and upper chamber block A discharge passage is formed between the upper chamber wall 22 and the high frequency vibration of the upper chamber wall Buffer compartment 184 supplied with medium expelled from the gap The processing medium is discharged under large fluctuations.

The expulsion of the processing medium into the discharge 3IIi path is accomplished by removing the thrust medium from the thrust chamber 36. 104 can be supported by temporarily discharging the chamber, and the pressure in the chamber is low. down.

For example, during an instant such as 005 seconds, approximately 0.2 c'' of media is displaced and the surrounding The height of the exit gap is approximately 10 μm.

This expulsion method first eliminates the residual sound from the media containing minute contaminants. The buffer compartment 134 is the main buffer compartment.

At the same time, a gas phase rinsing medium 78 is released from the gas lock compartment 48 into the surrounding gas. The mixture is directed to the discharge passage through the pipe and the mixture is directed to the discharge passage through the discharge line. Released from the streets.

Processes the cleaner medium by continuously raising and lowering the upper chamber wall It is expelled from the gaps 174, 176 into the discharge passage 28.

In Figures 6 and 7D, thrust compartment 668 and pulsator The pressure drop in the upper chamber 42 causes the upper chamber wall to rise again. Ru.

Subsequently, the newly supplied medium causes the medium residual sound to reach the gap 174,776. from the buffer compartments 184, 134 and into the discharge passage 28. The gap is filled with fresh medium.

The displacing medium is first a gas phase medium and then a quantity of liquid phase medium at least is injected into the gap 174 and the vibration causes the medium to spread uniformly across said gap. spread to.

In this way, wafer processing in processing chamber 24 can be repeated with fresh media. returned.

Refreshment for optimal treatment by limiting the amount of media emitted is performed repeatedly.

In FIGS. 8 and 9c, the processing medium is shown to have a swirling action. For the buffer treatment, the upper chamber wall is made with mini-irregularities, but this Any profile is acceptable within the scope of the invention.

Eight F In Figures 10 to 10 and Figures 11A to 11E, the blocks Wafer processing with continuous lowering of section 34 is shown.

In Figures 12 to 12E and Figures 13A to 13, 10E Aggressive lagging (lago) for high pressure wafer processing according to Figures and 11E. ina) effects have been shown.

As shown in FIG. 12B, at the point when block section 34 begins to descend, Due to the lagging effect, the wafer 26 continues to rise and closes the upper processing gap. At step 174, the pressure has already increased during the first half of the condensing stroke.

This creates a shock wave in the media, especially during the latter half of the compression stroke. acts on the surface 190. See Figures 12°, 12°, and 12E.

In FIG. 12F, the internal pressure of thrust chamber 668 increases, causing The finish-off medium 30 is again expelled from the processing gaps 174 and 176, and the The ejection of thrust media from the thrust chamber 36 causes the block 20 to , descending beyond the fine interval.

13-13E, the expansion stroke of block section 34 is shown in FIGS. The lagging effect of the wafer in the lock is shown.

Once this upward expansion stroke is initiated, the wafer 26 continues to descend. .

In Figures 14.15 and 16.18, the web in the upper gap 174 Fur treatment is performed with liquid medium 658.

In FIG. 14A, this supply of liquid medium 658 is via central orifice 72. The medium 30, which is a combination of a gaseous medium and a vaporized or liquid medium, is placed in the orifice. is supplied to the lower gap 176 through the lower gap 176 .

Within the scope of this invention, any wafer processing, e.g. cleaning, etching, etc. Any liquid medium can be used for printing, stripping, and developing processes. Ru.

Block section 34 has the lowest vibration amplitude and is in the upper position.

In FIG. 148, the media supply is stopped and the lower chamber block 20 is Liquid medium 658 flows from the upper gap 174 at approximately the upper position. is expelled to the discharge passage 28 via the fur compartments 184, 134, Also, a small amount of processing medium is discharged from the lower gap 176 into the discharge passage. Ru.

In Figure 15.16, wafer processing with media 658.30 is shown in processing The lower chamber block is now hermetically sealed. will be removed.

In FIG. 15A, during the compression stroke, the block section is lowered. . Due to the relatively large mass of the wafer, the wafer continues to rise, which causes Acting on the wafer during the compression stroke of the block station 34 This is due to the upward thrust of the medium 3o in the lower gap 176.

This compression stroke allows the block station to quickly move the wafer. With the upward movement, a vacuum bubble 660 is generated in the upper gap 174. be done.

Thus, first of all, in the gap 174, these vacuum bubbles are occupy a portion. See Figure 158. This allows the liquid droplets to flow at high pressure and velocity. Submicron valley 1 located on the upper surface 190 of the wafer as a processing surface Enter 92. See Figure 18A.

As shown in FIG. 15, at the end of the movement of the block, the wafer 26 is by the block section and the column liquid in the upper gap. The liquid to be compressed in the intervening gap 176 is compressed to the maximum.

This allows the medium to absorb the relatively fast downward movement of the wafer and slow it down. - act as a buffer to bring it down.

In FIG. 16A, block section 34 has an upward m expansion stroke. Continuing, the wafer is subsequently moved by the thrust of the medium 658 in a downward direction. Continue to move downward.

Due to the traction force of the pulsator on the block 34, the film-like liquid 658 is It melts within the valley 192 due to the generation of micron vacuum bubbles. See Figure 18B Light.

Therefore, it is preferred that the liquid medium 658 have low cohesive forces and low coefficients of adhesion. Delicious.

Thus, boundary layer 662 of wafer 26 is effectively removed.

In the case of wafer cleaning, effective cleaning of submicron valleys can be performed effectively. No, for example, washing cycles are repeated 5,000 to 10,000 times per second. .

In particular, large amplitudes of pulsator vibrations, e.g. Although the thrust of the medium 658 against the surface 190 is large, the microscopic gas cushion The lower surface of the wafer is supported by the lower chamber block through the Therefore, the wafer will not be damaged.

Also, since the wafer 26 moves repeatedly in the vertical direction, the lower gap 176 is Effective processing of the lower side 664 of the wafer can also be performed.

Other effective processing methods are shown in Figures 17.1.9 and 20.21.

As shown in FIG. 17A, liquid medium 658 is centrally poured into the upper gap 174. This causes the center block section 34 to move upward to some extent. 17th See figure B.

This ensures that, in particular, during the upward expansion stroke of the block section, the From the buffer compartment 184 next to the buffer 26 at least the gas medium Body 78 is suctioned.

Within the scope of this invention, incidentally or not, a small amount of gaseous medium, e.g. mm” injection can be effected through the central supply orifice 72.

In this manner, a liquid-rich mixture is present within the upper gap 174.

Within the scope of this invention, such liquid-rich mixtures can be fed centrally.

After the subsequent downward movement of the block section, the wafer processing is hermetic. It takes place in a sealed chamber 24.

In the compression stroke phase in FIGS. 20 and 208, the wafer 26 upward movement is shown.

At the end of this compression stroke phase, the media against the top surface 190 of the wafer A full effect of 65 g/78 of the mixture is achieved.

Due to the sufficient micro-eddy current action of this mixture, the micron valley 192/\the mixing The body enters, see Figure 19A.

During the subsequent expansion stroke (not shown) of block section 34, Due to the sudden pressure drop in the submicron valley, the medium partially becomes m swell. See Figure 198.

As shown in Figure 20.21, during wafer processing, block section 34 is The vertical position can be varied to be optimal for cleaning submicron valleys regardless of its vibration. Wear.

Within the scope of this invention, the type and size of the pulsator may be The law can be of any kind.

In FIG. 24, the wafer 26 in a floating state is shown in the transfer section of the transfer block 44. 66 in the direction of the processing chamber 24.

To maintain this floating state, a supply orifice located in the lower chamber block A gas phase medium 78 is supplied via 70.74.

From the orifice, the medium flows in an oblique direction towards the wafer and enters the chamber. A slight thrust is applied to the wafer in the direction of the wafer stop 556 at No. 24. .

At the illustrated wafer position, sensor 554 detects passage of the wafer; A valve in the supply line 70 is sent to the valve at the end of the wafer movement. Expand your media supply.

The back end 450 of the wafer is still in the relatively narrow feed passage 558, but the wafer The floating state of the wafer is still maintained due to the vibration of the gas phase medium above the wafer. There is.

See Figures 26 and 26B.

However, the front end 456 of the wafer is caused by the upward thrust of the gaseous medium. Moves up quite a bit. See Figure 25°27.

The vibration of the upper chamber 34 creates a vortex effect on the gas phase medium 78 of the processing chamber, causing a special In addition, in the lower gap, the medium spreads uniformly over the wafer surface, and the medium A slowdown effect is applied to the wafer.

a small amount of liquid thrust medium 104 of about 3 cm into the thrust chamber 36, or , the lower chamber block is continuously supplied and discharged from the chamber (see Figure 1). Move the bar back and forth by approximately 0.li.

Furthermore, the upper chamber wall 34 also has a low frequency and a large amplitude of approximately 0.1 m+e. make it vibrate.

This is illustrated in Figures 26A, 26B, and 27.28.

In FIG. 26A, the upward movement of the upper chamber wall 34 and the lower chamber block 2 A downward movement of 0 is performed with negative pressure in gaps 452, 454, as shown in FIG. 26B. The downward compression stroke of the upper chamber wall 34 and the lower chamber block During the downward movement, the media is compressed within these gear knobs.

Therefore, the temporary floating state of the trailing end 450 of the wafer is maintained.

However, the front end 456 of the wafer is at the level at which the wafer continues to move. The front side 562 of the wafer is raised to the vertical side wall 556 of the processing chamber 24. It hits and stops. See Figure 28.29.

By slowing down the flow of media to and from the wafer, the wafer The wafer does not move back more than 1 m1 and comes to rest against the wall.

A lower section 570 of sidewall 556 guides the wafer into position within the chamber. It has a conical shape.

Subsequently, the wafer is placed in the center of the chamber 24, as shown in FIG. state and then the supply of media 78 to the lower chamber plotter is stopped; The floating state of the wafer is temporarily released.

Subsequently, block 20 and the wafer are exposed to media 104 from chamber 36. is moved to the lowest position, and the transport block 44 is also moved to the outside of the module. The buffer holder can be moved to the pick position.

In FIG. 31, outlet 202 of wafer processing apparatus 10 is connected to the main processing module. 204. The transfer arm 42 transfers the processed wafer 26" are sequentially placed on the turntable 208 of the module 204.

The apparatus 10 cleans all sides of the wafer.

The same equipment can be used for cleaning, etching, stripping or developing. wafer post-processing functions such as from the inlet 202 of the filter 204.

Furthermore, the feed cassette 14 can be sealed like the 5HIF box shown by the imaginary line. It becomes part of the carrying box.

In FIG. 32.33, the dual modules 212, 214 of the device 210 are shown The buffer processing is being performed.

This device includes a feed cassette 216 housed in a sealable box 218, a sealable It has a receiving cassette 220 built into a possible box 222.

The entrance gate 232 is connected by the support plate 224 and the upper chamber block 226. A tunnel passage 22 leading from an entrance 230 with an exit 234 with a gate 236 8 is composed.

Furthermore, the wafer transfer arm 238 moves horizontally within this tunnel.

Arm 238 is connected to a wafer suction section that supplies wafers to module 212. 244 and release the wafer from the module to module 214. section 245 and processed wafer 26'' from module 214. an arm section 248 having a suction section 250 discharging into the set 220; including.

Furthermore, the structure of these modules is the same as that of the module shown in Figure 1.2. It's like that.

34A to 34E, the linear movement position of the transfer arm 238; The linear movement position of the wafer being conveyed while floating is illustrated.

In FIG. 34A, wafer processing is performed in both modules 212 and 214. The transfer arm 238 is located at the receiving position 252.

After this process, both lower chamber blocks 254, 256 moves downward to the wafer transport position, and at the same time, the wafers 26', 2 6” can be used to extend the arm over these blocks in a floating state, as shown in Figure 34B. to both sections 246, 259 and then to the three wafer sections 26, 26' , 26'" are simultaneously sucked into these sections 244, 246, 250.

After that, both lower chamber blocks further descend to the lowest position, and then the transport A beam 238 with three wafers extends beyond these blocks as shown in Figure 34. As shown in FIG.

When both blocks 254 and 256 move to the wafer transfer position, section 24 With the release of the vacuum at 2,244,246, the wafer 26" is removed from the cassette. The wafers 26 and 26° are transported to the block 218 in a floating state. 254, 256 to the vertical wall 556 of the processing chamber. See Figure 34D Light.

Also, the sensor causes the wafers 26, 26' to pass through the two prongs 254, 256. If these wafers are centered with respect to the chamber 24, , the prong moves down to the lowest position together with the wafer.

The transfer arm 238 then moves the wafer receiver over the block to position 252. At this arm position, both blocks 254 and 256 move to the upper processing position. Both wafers 26, 26' are processed.

Thereafter, the wafer transfer cycle described above is repeated.

In FIG. 35, apparatus 210 apparatus 210 removes wafer 26 with high vacuum. It is connected to the inlet 262 of the processing module 264.

The processed wafers 26°' are sequentially sent to position 266 on tar table 268. It will be done.

Within the scope of this invention, the module 262 may be implemented using any processing structure and method. There may be.

The outlet of the module 264 may be the inlet 262, and the device 210 It also functions as a management device.

During high vacuum wafer processing, the module 264 270 up and down within the wall recess 272 of the hermetically sealed inlet 274. The module 264 is isolated from the outside air.

At No. 360, an apparatus 10'' is illustrated in which the wafer 2 is moved under the action of gravity. 6 moves while floating in the lower chamber block 20'.

A moving member 518 is attached to the side of the receiving cassette 16 to move the wafer. The apparatus is temporarily tilted from the transfer position toward the processing chamber 24.

Furthermore, the extension 102 of the block 20'' is located within the recess 526 of the guide block 100. It can be moved slightly in the transverse direction, and the extension is secured by an O-ring 524. interview.

Furthermore, the supply nipple 532,534,536,538 of the liquid medium 104 is connected to the recess. included for media supply to section 526.

Supply lines to nipples 532, 536 via valve 542 and valve 54 The supply line to the nipples 534, 538 via 6 is connected to the output of the circulation pump 548. It is connected to the mouth side and supplies the medium 104 from the thrust chamber 36.

In FIG. 37A, the lower chamber block 20° has a wafer transfer value of 1f. 550, and the transfer arm 44 is in the wafer transfer position 520 and the transfer arm 44 is in the wafer transfer position 520. Section 66 of the system releases wafer 26.

An impulse is applied to the member to be moved 518 to tilt the device.

During the wafer transfer start phase, impulses to pump 548 and valve 546 are activated. At stage, liquid medium 104 is supplied to nipples 534,538 and blocks 20'' It is tilted to support the movement of the wafer.

Furthermore, with the supply of gaseous medium 78 to channels 70.74, the wafer is suspended. state, and the pulsator 32 causes the central block section 34 to vibrate.

In FIG. 37A, sensor 554 moves the wafer past transfer arm 44. is detected, and the wafer reaches the top of the lower chamber block 20''.

In the final phase of wafer transfer, the input from the sensor to both valves 542 and 546 is By pulse, the medium supply to the nipples 532, 536 blocks 20°. The tilt position of ゛ is reversed. See Figure 378.

However, when the 10° tilted position of the device passes the opposite tilted position of the block 20°, The wafer 26 continues to move over the block 20'.

Due to the opposite tilted position of the block 20'', the wafer is placed on the vertical wall 5 of the chamber 24. It hits 56 and stops. See Figure 378.

This final phase of wafer transport is shown enlarged in FIGS. 38A and 388. It is.

As shown in Figure 38A, the upper chamfer pulses during the downward compression stroke. The chamber wall color 4 causes the media to flow vertically to the wafer. Furthermore, the medium from the chamber 24 along the wafer to the transport path section 558,560.

In this way, significant wafer slowdown is achieved.

As shown in FIG. Negative pressure is generated and media is sucked out of the transport passageway 560 through the opening 562.

The wafer now partially closes the transport path 556 and the section 558. The pressure at section 560 is slightly higher than at section 560.

Therefore, a media thrust against the wafer is generated toward the chamber 24.

by slowing down and propelling the wafer with at least a low frequency pulse; The wafer moves to some extent.

Finally, the wafer hits wall 556 and stops.

The structure of FIGS. 24 to 30 with respect to wafer movement is a slowdown system. It can also be used for

Whether the wafer arrives at the center location or not, the equipment and lower channels The tilting of the wafer block and the floating state of the wafer end, and the block and wafer The carrier moves down to the lowest position W564, and then the transfer arm 44 moves over them. and moves backward to the receiving position 566.

See Figure 37°.

If arm 44 reaches -5661\, or even if it does not reach, then block The upper wafer is then moved upward again (see Figure 370), and the upper wafer is processed. 568 and the chamber is sealed by the lower chamber block. 37th See figure E.

A wafer processing cycle is then initiated in the chamber.

After wafer processing, block 20" and processed wafer 26" are - sent to the transport value N572. See Figure 39A.

The apparatus is then tilted to the tilted position, and the wafer 26 is placed in suspension. support medium is fed to channel 76.

Here, too, the vibratory action of the upper chamber wall 34 is maintained (Fig. 40, Fig. 4). (See figure 08), to the wafer. Propulsive force 576 by low frequency pulses is used to adjust and slow down the movement of (stronger than the sliding force 578).

Since the moving distance is short, the time required for moving is limited to less than 1 second, as shown in Figure 39. As shown in FIG. The wafer reaches the arm bar position and makes a soft landing on the arm wall 580. Ru.

Subsequently, the wafer 26° is sucked into this section (Figure 39C) and the wafer 20'' is sent to the lowest wafer transfer position 564. See FIG. 39D. At the same time, the wafer 26 is sucked into the receiving section 66.

Thereafter, the transfer arm 44 is moved to the lower chamber block together with both wafers 26, 26'. The wafer is moved to the wafer transfer position 552 through the wafer storage area. See Figure 39E, and , the processed wafer 26' is transported to the receiving cassette 16, and the wafer -26 is sent to the lower chamber block 20'', after which the above-mentioned wafer The transport cycle is repeated.

Within the scope of this invention, the structure and method of wafer transport is not limited.

Within the scope of the invention, the apparatus comprises two wafer-transfer arms with at least one wafer transport arm. There may be more than one inline module.

Additionally, at least one of the walls of the processing chamber may be used for e.g. Heating elements can be placed.

Additionally, oven baking of the wafers can be done in consecutive modules, allowing subsequent Cooled by module.

In addition, the illustrated processing module of the apparatus performs wafer processing as described below. can be done.

Cleaning, ultrasonic cleaning, megasonic cleaning, plasma cleaning: developing; Etching, plasma etching: Stripping, plasma stripping: oven bake, micro open , including hot plate oven baking; Dopant treatment; Chemical vapor deposition; Physical vapor deposition: Adhesion of gas-phase and liquid-phase coatings, vacuum deposition of gas-phase primers: oxidation system, and Wafer testing, measuring, inspection and marking.

For example, the first module cleans the entire wafer, and then the next module cleans the entire wafer. Then, the wafer is subjected to a proximity bake or dehydration beta.

In addition, pulsators can be in single or multi-version, with It does not have to be on the lower side of the chamber block or on the lower side, and it can be of any size.

Furthermore, the material of the pulsator can be e.g. ticonal, reCO or alc. Electromagnetic materials and alloys such as ino, ceramic, ferroxdure, etc. are used. Can be used.

Furthermore, the yoke may or may not be a permanent magnet.

Furthermore, if this yoke is made larger, it becomes an upper chamber block.

international search report PCT/NL　89100092

Claims (1)

[Claims] 1. An apparatus for transporting and processing wafers consisting of: a) a lower chamber block; an upper chamber block; and a processing module comprising at least a wafer processing chamber located between said blocks. b) a wafer transport for continuously supplying wafers to said processing chamber; transport device: c) a wafer transport device for continuously ejecting wafers from said processing chamber; and, at least during the processing of wafers in said processing chamber, frequent vibrations, temporary or otherwise, of the height of said processing chamber. is moved back and forth along the chamber wall by means to make 2. During wafer processing in the processing chamber, the processing chamber includes means for at least temporarily insulating the wafer from outside air and maintaining double floating of the wafer. The device defined in claim 1. 3. During wafer processing, processing medium is placed in the upper processing gap above the wafer. The body is at least temporarily in a double floating state with little supply 3. The apparatus as defined in claim 2, comprising means for maintaining the condition. 4. into the processing chamber without discharging the processing medium from the chamber to the exhaust. 4. The apparatus as defined in claim 3, further comprising means for temporarily maintaining said double floating state in said double floating state. 5. 3. The apparatus as defined in claim 2, wherein part of the processing of the wafer is carried out under double floating conditions in a sealed processing chamber without supplying a processing medium. 6. In the wafer processing position of the chamber block, the upper chamber wall is positioned directly above the wafer during wafer processing, and includes means for setting the height of the upper processing gap above the wafer to 0.1 mm or less. Defined in item 1 A device that has been defined. 7. Apparatus as defined in claim 1, characterized in that the reciprocal central section of the chamber block is connected to the outer section of the block via a lateral peripheral membranous section of the processing chamber. 8. The membrane section is within the upper chamber block. The device defined in claim 7. 9. 8. Apparatus as defined in claim 7, including at least one valsator for reciprocally moving said central block section. 10. 10. A device as defined in claim 9, wherein the valsator is an electromagnetic device. 11. 10. A device as defined in claim 9, wherein the valsator is a piezo device. 12. The valsator is a compression/reducer located next to the center block section. 10. Apparatus as defined in claim 9 including a pressure chamber and means for urging a thrust medium to and from said compression/decompression chamber. 13. The balsator combines elements to generate high and low frequency vibrations. 13. The apparatus as defined in claim 12, comprising: 14. 8. Apparatus as defined in claim 7, wherein at least a portion of the outer section of the block is configured to function as a sealing section for the processing chamber. 15. The valsator is built into a valsator chamber and is isolated from outside air. 15. The device as defined in claim 14. 16. an upper wall of the lower chamber block extends beyond the peripheral sealing section and is provided with a recess extending downwardly to form a discharge passageway, to which at least one discharge passageway is connected; The discharge passage is connected to the membrane section. 15. A device as defined in claim 14, extending laterally beyond the section. 17. A gas lock compartment is located laterally beyond the discharge passage. 17. The device as defined in claim 16. 18. Within the compartment, the wafer in the processing chamber is During the processing of the processing chamber, the supplied medium has an overpressure compared to the pressure within the processing chamber. 18. A device as defined in claim 17, including means for maintaining the resher. 19. A lower chamber is located between the exhaust passage and the gas lock compartment. The perimeter seal section of the chamber block is corresponds to the sealing section of the upper chamber block, which corresponds to the sealing section of the upper chamber block, which 19. The device as defined in claim 18, proximate the first sealing section between the bar and the discharge passageway and forming a second sealing section. 20. The upper wall of the lower chamber block is connected to the gas lock compartment member. forming a laterally peripheral sealing section beyond the upper chamber bubble. corresponds to the peripheral seal section of the lock and has a third seal between both chamber blocks. 20. The apparatus as defined in claim 19, forming a flow section to shut off the processing chamber during processing. 21. 21. Apparatus as defined in claim 20, including means for maintaining an overpressure in the discharge passageway during a portion of wafer processing, approximately the same as the required average pressure of the processing medium in the processing chamber. 22. A minibar between the surrounding membrane section and the other chamber block. A gas lock and a gas lock are located, at least a portion of which 22. Apparatus as defined in claim 21, including means for performing the function of preventing processing media, which may contain submicron contaminants, from escaping the process. 23. During wafer processing, the gas lock compartment includes the exhaust passage. An overpressure is maintained higher than the wafer flow in the processing chamber. The claim includes means for preventing lateral escape of media from said discharge passageway during fur processing. The device defined in claim 21. 24. If the overpressure of the gas medium in the gas lock compartment is the wafer in the processing chamber is higher than the atmospheric pressure surrounding the module; During air processing, a third gas lock connects the gas lock compartment and the module. 24. The apparatus as defined in claim 23, comprising means formed between the chamber block and the outer region of the chamber block to prevent outside air from entering the sealing section between both chamber blocks without allowing the escape of medium from the gas lock compartment. 25. When replacing the used medium in the processing chamber with a newly supplied medium, the used medium is discharged into the discharge passage, and the pressure in the passage is reduced. 24. A device as defined in claim 23, including means for maintaining the condition. 26. The lower chamber block is made of at least a flexible material. It has a bellows section on its side, and the bottom end is air-tight to the module housing. A thrust chamber is formed which is fixed to the housing and moves the upper section of said block in a vertical direction with a thrust medium, said block relative to said thrust chamber. 18. A device as defined in claim 17 for raising and lowering. 27. A central non-deformable section of the block connects to the bellows section, which section is made of a flexible synthetic material such as Teflon PFA. at least the section is reinforced with a woven layer, and the synthetic material is reinforced with a woven layer; Cover the undeformed central block section as 18. A device as defined in claim 17, wherein a small groove is fixed thereto. 28. As defined in claim 27, the bottom of said upper chamber block is lined in part or in whole with a synthetic material such as Teflon PAF, metal or other material that does not generate contaminants and is resistant to the processing media used. equipment. 29. The liquid thrust medium is located vertically in the upper section of the lower chamber block. 27. A device as defined in claim 26, used for directional movement. 30. compared to the pressure of the thrust medium in the thrust chamber; Due to the positive difference in pressure present in the processing medium in the chamber, said lower chamber The chamber block is at least temporarily lowered over a short distance to discharge the spent media into the discharge passage and at the same time discharge the spent media into the gas lock comparator along with the leak gap. 30. The apparatus as defined in claim 29, comprising means for forming an evacuation gap between the compartment and the evacuation passage and for discharging gaseous medium from the compartment into the evacuation passage. Place. 31. 8. The device as defined in claim 7, wherein in the central chamber block a supply channel for the treatment medium is centrally arranged. 32. Before centrally supplying new processing medium to the processing chamber and/or After treatment of the fur, an excess concentration of vapor phase rinsing medium is provided, the used treatment medium is discharged into the discharge passage, and at the same time a vapor phase medium as a rinsing medium is sent from the gas lock compartment to the discharge passage; Used from the passage to the discharge line 32. The apparatus as defined in claim 31, including means for ejecting the processing medium. 33. related to the reciprocating movement of the chamber wall achieved by the valsator. 7. A device as defined in claim 1, further comprising means for moving in the vertical direction of the wall. 34. When the process chamber is filled with a medium and the chamber is substantially completely sealed, compression of the gaseous medium in the chamber is caused by the vibrating chamber walls. 34. Apparatus as defined in claim 33, including means for performing. 35. The valsator is located in a valsator chamber, to which at least one medium supply and outlet channel is connected, and includes means for creating a pressure difference in the chamber to move the chamber walls in a vertical direction. Equipment defined in Section 35. 36. 34. Apparatus as defined in claim 33, wherein a portion of the valsator is integral with or joined to the central reciprocating chamber block section. 37. The end section of the valsator is modularized by a peripheral baffle block. 34. The device as defined in claim 33, wherein the device is anchored in the inner section of the valsator chamber, and a thrust section is created next to the valsator chamber to shut off the remainder of the valsator chamber. 38. The thrust compartment has media supply and/or discharge lines. by connecting it to the thrust compartment and adjusting the pressure of the medium in the thrust compartment. The height of the balsator is adjustable, the balsator is moved by it, and the reciprocating movement is 38. Apparatus as defined in claim 37 for imparting sequential vertical positions to a moving chamber wall. 39. The pressure of the medium in the thrust compartment increases in the processing chamber. 39. The apparatus of claim 38, including means for determining a required average pressure of the treatment medium. 40. 40. The apparatus of claim 39, wherein the pressure of the medium in the valsator chamber includes means for determining a required average pressure of the processing medium in the processing chamber. 41. The pressure of the medium in the balsator chamber is applied to the thrust chamber. 40. An apparatus as defined in claim 39, comprising means substantially corresponding to those of a medium for storing. 42. 41. The apparatus as defined in claim 40, comprising means for establishing parallelism between both chambers during wafer processing and medium ejection. 43. The parallel settings connect the media in the balsator chamber and the thrust comparator. 43. The apparatus as defined in claim 42, comprising means established by a medium within the transaction. 44. 41. The device as defined in claim 40, wherein a damping device is located between the valsator and the module housing to at least absorb valsator vibrations. 45. 45. Apparatus as defined in claim 44, including means for the medium in the thrust compartment to be a gas phase medium. 46. The medium in the balsator chamber is also a gas phase medium and the electric balsator chamber 46. A device as defined in claim 45, including means for also functioning as a coolant for the tank. 47. Apparatus as defined in claim 1, wherein the means for reciprocating the chamber wall includes at least means combining at least two oscillations resulting from continuous fluctuations in the positive and negative of an alternating current connected to the balsator. 48. The thrust compartment also acts as a physical balsator and 39. A device as defined in claim 38, for supplying and discharging media for successive reciprocal movements of the valsator. 49. 49. The apparatus as defined in claim 48, wherein the frequency and amplitude modulation of the vibrations of the chamber wall includes means with low, medium and high frequency vibrations having large, medium and small amplitudes, respectively. 50. for at least a portion of a wafer processing cycle in the processing chamber. Apparatus as defined in any of the preceding claims, wherein a gas phase medium is used. 51. 51. The apparatus as defined in claim 50, wherein the layer of compressible medium in the sub-processing gap includes means for uniformly supporting the wafer on its entire bottom surface as a cushion. 52. 51. Apparatus as defined in claim 50, wherein a mixture of gaseous and liquid media is used in at least part of the wafer processing cycle. 53. During at least a portion of the wafer processing cycle, the vapor phase medium and the substrate 51. Apparatus as defined in claim 50, wherein a mixture of sized media is used. 54. 51. Apparatus as defined in claim 50, wherein vapor phase and liquid phase processing media are used during at least part of the wafer processing cycle. 55. as defined in claim 50, including means for cleaning all sides of the wafer. equipment. 56. In the upper processing gap, top surface processing of the wafer, such as etching, cleaning, developing, stripping, is carried out by at least an aggressive medium, and in the lower processing gap, by at least a vapor phase processing medium. 51. Apparatus as defined in claim 50, including means for maintaining at least the wafer in suspension. 57. For processing, evacuation and exchange of processing media in both processing gaps, said slugs 51. The apparatus as defined in claim 50, comprising means for increasing the pressure of the medium in the chamber wall and moving the vibrating chamber wall towards another chamber wall. 58. increasing the pressure of a treatment medium and at least temporarily and partially displacing a non-vibrating chamber wall to direct treatment from said treatment chamber and into said surrounding exhaust passage; 58. The device as defined in claim 57, comprising means for forming a discharge gap for discharging the management medium. Place. 59. 59. The apparatus as defined in claim 58, including means for subsequently moving the vibrating wall after evacuation of at least the processing medium from the processing chamber to provide for replacement of the processing medium. 60. 60. The device as defined in claim 59, comprising means for temporarily reducing the pressure of the medium in the thrust chamber and discharging a portion of the medium supplied as rinsing medium through the achieved discharge gap into the discharge passage. 61. 61. The apparatus as defined in claim 60, comprising means for moving the vibrating wall towards another chamber wall for subsequent processing after filling the processing gap with fresh medium. 62. The upper end of the vertical wall of said processing chamber is rounded so that during processing, a compression stroke of the upper chamber wall directs the processing medium from the upper processing gap into a vertical chute. through the chamber sidewalls to the wafer edge, and the surrounding buffer is applied to this wafer edge. 51. A device as defined in claim 50, comprising means for forming a full compartment. 63. During wafer processing, the average height of the upper processing gap is reduced such that its outer section strongly resists the flow of the medium, separate processing takes place within this gap, and the outer gap serves as the first buffer compartment. section, the second buffer compartment member next to the wafer edge. 63. The apparatus as defined in claim 62, wherein the discharge of the processing medium into the first buffer compartment takes place and includes means for supplying the processing medium from this second compartment to the first buffer compartment. 64. Continuous central supply of media towards the lower processing gap allows upper processing 64. Apparatus as defined in claim 63, including means for the average height of the lower gap to be lower than that of the lower gap. 65. 64. Apparatus as defined in claim 63, including means for wafer processing which is effected by a lagging effect of rapidly reciprocating wafers. 66. For processing some wafers, temporarily only the liquid medium is allowed to flow through the top processing gap. 51. Apparatus as defined in claim 50, including means for injecting into the pool. 67. During the upward expansion stroke of the upper chamber wall, the wafer remains behind due to its mass, leading to the generation of vacuum bubbles in the liquid medium and the bursting of these bubbles. 67. The apparatus as defined in claim 66, including means for removing media from the boundary layer directly above the wafer by a tearing action. 68. During the compression stroke of the upper chamber wall, the liquid medium particles move at high speed. 68. Apparatus as defined in claim 67, including means for fully acting on the wafer surface, including said boundary layer and valleys, by means of a vacuum bubble sent to the efir, which first rises and then ruptures. 69. 67. The apparatus as defined in claim 66, including means for simultaneously or non-simultaneously injecting small amounts of gaseous medium to obtain a liquid-rich mixture. 70. During wafer processing in a processing gap, the used processing media is 51. Apparatus as defined in claim 50, including means for gradually replacing the medium with a centrally fed medium into the pool. 71. 71. Apparatus as defined in claim 70, including means for directing and laterally discharging spent media into a peripheral buffer compartment beside the wafer and for unobstructed discharge into said discharge passageway. 72. 72. Apparatus as defined in claim 71, including means for allowing said exchange to occur at least temporarily and at least substantially undisturbed. 73. During wafer processing in the upper processing gap, the used media is 71. Apparatus as defined in claim 70, comprising means for gradually displacing the medium supplied in concentrated quantities. 74. 74. The device as defined in claim 73, comprising means for this novel medium to be a liquid medium. 75. New gas phase media with centrally fed exchange of processing media into the lower processing gap 75. A device as defined in claim 74 comprising body-implemented means. 76. As a valsator, an electromagnet is used, and the upward movement of the upper chamber wall is carried out by a highly compressed medium in a mini-gap between the stator and the yoke. 51. The apparatus as defined in claim 50, comprising means for: 77. a modulator that changes the frequency and amplitude of the alternating current; Apparatus as defined in one of the preceding claims for performing number and amplitude modulation. 78. Minimize the supply of media to the upper processing gap and the supply to the central orifice. The inner diameter of the supply line is reduced so that the liquid medium can be sucked into the line by capillary action without any expulsion force. 51. Apparatus as defined in claim 50, including means for pulling. 79. 79. A device as defined in claim 78, wherein the internal diameter of the supply line is as narrow as 0.2 mm or less. 80. Apparatus as defined in one of the preceding claims constituting a wafer transport apparatus comprising: a) a central wafer transport section for horizontally as well as vertically transporting wafers to and from the wafer processing chamber; b) wafer transport a wafer feed section for horizontally transporting wafers from the unit to said central transport section; c) a wafer feed section for horizontally transporting wafers from said central transport section to a wafer takeover unit; A receiving and conveying section that sends the air horizontally. 81. The central wafer transfer section comprises a) the lower chamber block; and b) the lower chamber block as a wafer takeover unit. Means for vertical movement from the upper wafer processing position to the wafer transfer position and back to the wafer transfer position. 82. A gas cushion between the lower chamber block and the wafer causes an inclined slot of the wafer in the direction from the feed transport unit to the processing chamber. a mechanism for stopping the wafer at a vertical wall of the processing chamber at the end of the wafer moving in a suspended state above the lower chamber toward the processing chamber; 82. An apparatus as defined in claim 81, comprising a stage. 83. The lower chamber block cooperates with the surrounding membrane section to 83. The device as defined in claim 82, comprising means for acting as a swivel axis for the wafer. Place. 84. A central supply channel of gas-supporting medium in the lower chamber block is inclined towards a stop in the vertical chamber side wall to provide a flow to the medium supporting the wafer, thereby further imparting a propulsive action and an upward stroke to the wafer. 84. A device as defined in claim 83 for applying a last. 85. The central section of the lower chamber block is connected to the upper chamber block. When the wafer reaches the end of its floating state, the front The wafer is rested on a vertical side wall of the processing chamber, and the wafer is placed against the processing chamber. 82. The apparatus as defined in claim 81, including means for causing the central position to be occupied. 86. passing over the lower chamber block and into the processing chamber; A method for moving a wafer from a processing chamber in a floating state using the gravitational action of the wafer. 86. An apparatus as defined in claim 85, comprising a stage. 87. For this purpose, the processing module is inclined with a slope directed from the feed transport unit at the wafer transport position to the processing chamber, and 87. The device as defined in claim 86, comprising means in which at least one moving object is located in a lower section of the device. 88. The tilted position of the central lower chamber block section temporarily 88. The apparatus as defined in claim 87, comprising means opposite said slope position of joules. Place. 89. The inclined position of the central lower chamber block section 89. Apparatus as defined in claim 88, including means sloping from the knit in the direction of the processing chamber. 90. In the wafer movement start phase, the lower chamber block The slope of the upper chamber block is additionally inclined in the same slope direction as the upper chamber block, and the gravitational force is temporarily increased when the floating wafer starts moving. 89. An apparatus as defined in claim 88, comprising a stage. 91. to the gas medium from the central supply orifice in the lower chamber block; 83. The apparatus as defined in claim 82, comprising means for suspending said wafer through said subchamber block. 92. The central lower chamber block section is a cylindrical guiding section. the cylindrical guide section extends downwardly with a 93. The defined apparatus of claim 92, wherein the tilted position of the central lower chamber block section is achieved. 93. For said purpose, a plurality of liquid medium supply channels located in said guide block are provided. 93. The device as defined in claim 92, wherein a channel leads to a central recess thereof, directing the medium into the recess beside the guide section and imparting a swivel action to the guide section. 94. During the movement of the wafer through the lower chamber block in suspension, the vibrating upper chamber wall directs a medium towards the wafer or A hand that is returned from the wafer and gives at least a slowing effect to said wafer. A device as defined in one of the preceding claims, comprising a stage. 95. 95. The method as defined in claim 94, comprising means for moving said wafer through said lower chamber block in a suspended state directly below a recess in said upper chamber block. defined device. 96. After the wafer hits the vertical side wall of the processing chamber and comes to rest, the wafer is moved back by 0.3 mm or less due to the reciprocating action of the upper chamber wall, and the wafer is brought to a central position with respect to the chamber. 96. An apparatus as defined in claim 95. 97. Insert the lower chamber block so below into the central lower chamber wall section. A gas medium supply channel is located on the inlet and outlet sides to replenish the gas medium supporting the floating state of the wafer, and the channel is connected to the gas lock compartment member. 95. A device as defined in claim 94 for discharging to a. 98. In the final phase in which the wafer is sent to the processing chamber, the 98. Apparatus as defined in claim 97, including means for supplying medium to said wafer from said central orifice of medium in a par chamber. 99. 98. Apparatus as defined in claim 97, including means for also vibrating said sub-chamber block during the final phase of transport of said wafer to said processing chamber. 100. The wafer transport unit transports the wafer to the lower chamber block. the wafer transport arm having a wafer holding section for transporting the wafer to the wafer rack; 82. A device as defined in claim 81, located next to the chamber block. 101. The wafer transport unit transports the wafer to the lower chamber block. as defined in claim 100, comprising: a wafer transfer arm having a wafer holding section for transporting wafers to a stack, the transfer section being located next to the lower chamber block in a wafer takeover position of the arm; outfit Place. 102. The wafer holding section is connected to a vacuum outlet located on top of the wafer holding section. 101. The apparatus as defined in claim 100, wherein the apparatus is a vacuum block that holds the wafer in a vacuum manner through a rift. 103. The drive mechanism that moves the sending and receiving transfer arms in a linear direction is located at the front. 101. An apparatus as defined in claim 100, located outside the processing module. 104. The wafer transfer position of the feed transformer arm is located at the lower chamber chamber. the feed transfer arm, which is positioned beyond the lock and has a wafer holding section, moves with the wafer from a wafer takeover position outside the lower chamber block at the entrance of the module to a free passage position beyond the lower chamber block; 104. The apparatus as defined in claim 103, wherein the apparatus is moved to the transfer position beyond the lower chamber block. 105. The takeover position of the receiving transfer arm is located at the lower chamber block. The receiving transfer arm, which is located in front of the rack and has a holding section, moves freely across the lower chamber block from the takeover position to a transfer position outside the lower chamber block at the outlet of the apparatus with the processed wafers. passing position 105. The device as defined in claim 104, wherein the device is lowered to a lower position. 106. The wafer transfer arm consists of a sending transfer arm section and a receiving transfer arm section, and as shown in the horizontal wafer transfer direction, the sending transfer arm section and the receiving transfer arm section of the transfer arm are connected to the arm section. 106. The apparatus as defined in claim 105, having a single drive mechanism for linear movement of said arm, located on both sides of said arm. 107. The wafer supply position of the transfer arm, which receives wafers from the wafer transfer device on the inlet side of the apparatus, is a take-off position for the folded wafers that have been processed in the processing chamber and have been moved to the position through the lower chamber block in a floating state. 107. The apparatus as defined in claim 106, wherein the apparatus is in a bar position. 108. The wafer transfer position of the transfer arm that receives unprocessed wafers, transfers them to a lower chamber block, and transfers them to the processing chamber is at a position before transferring processed wafers to a wafer takeover device on the exit side of the device. 108. A device as defined in claim 107, including means which is also the release position of the arm. 109. After the wafer is centered relative to the processing chamber, the lower chip The chamber block and wafer are lowered into a free position at the entrance of the apparatus and the transfer arc 109. An apparatus as defined in claim 108, including means for the arm to return over said arms to a wafer takeover position at the entrance of said apparatus, and after movement of said arms said arms to be raised towards a processing position. 110. After processing the wafer, the lower chamber block and the wafer are A wafer for linear wafer movement beyond the chamber block toward the transfer arm. 110. An apparatus as defined in claim 109, including means for lowering to a fur transporting position. 111. Reciprocating transport in the vertical direction to or from the wafer 111. An apparatus as defined in claim 110, including means for reducing the velocity of the wafer in the flow of media through the moving upper chamber wall. 112. The processed wafer reaches the takeover position on the transfer arm. After reaching the lower chamber block and wafer, the lower chamber block and wafer are lowered and the processed wafer is and the wafer to be processed are sucked into the transfer arm, the block is further lowered to its free position, after which the arm is moved with the wafer over the lower chamber block to the wafer transfer position and the vacuum is applied. release the processed wafer to the takeover position, and remove the processed wafer from the lower chamber block. After the block has been raised to its takeover position, the wafer to be processed is 112. Apparatus as defined in claim 111, including means for transferring to a bank. 113. defined in one of the preceding claims in which multiple processing modules are arranged. equipment. 114. A single, common wafer for at least two processing modules - Apparatus as defined in claim 113, in which a conveying device is used. 115. A single wafer transfer arm is used for at least two modules, the arm having a first arm set with wafer supply and discharge sections on each side. 114. The apparatus as defined in claim 113, comprising a second arm section with a wafer ejection section and only a wafer ejection section, the structure being followed by the next module. 116. The first discharge section absorbs the wafers processed in the first module. 116. The apparatus as defined in claim 115, comprising means for suctioning the wafers processed in the second module by a second discharge section. 117. The lower chamber blocks of these modules are mounted on a common support block. and a wafer is placed between the support block and the common upper chamber block. 114. The apparatus as defined in claim 113, wherein a transport tunnel is provided and a linear movement of the wafer takes place in the respective environment. 118. 120. A device as defined in claim 117, wherein the tunnel includes means for being closed at at least one end. 119. In the first processing module, at least a liquid medium is used for cleaning, cleaning and cleaning. Wafer processing such as etching, developing or stripping is carried out, and in subsequent modules processes such as cleaning, drying, proximity baking or dehydration baking are carried out by means of gas and/or vapor phase media. 114. The apparatus as defined in claim 113, comprising means for performing: 120. Whether or not the inlet and/or outlet side is suitably shaped, the said requester on this side connects with the next wafer transport and wafer takeover equipment. Equipment defined in one of the requirements: wafer cassette, SHIF box with wafer russet, high vacuum Main processing module including system module, testing, inspection, metrology, marking or or other wafer transfer equipment such as handling and wafer transfer robots. Place. 121. Equipment cleaning, ultrasonic cleaning, megasonic cleaning, plastic cleaning as defined in claim 120, which, when combined, includes at least one of the following treatment means: Zuma cleaning; etching, plasma etching, reactive ion plasma, magnetron ion etching dopant processing; various types of lithography including coating deposition; chemical vapor deposition, step-down or low pressure CVD epitaxial CVD deposition of nitride, oxide or polysilicon; physical vapor deposition, electron beam deposition; position, ion beam deposition, plasma deposition; high temperature evaporation systems; vapor phase and/or vapor phase coating deposition, vapor phase primer vacuum deposition: and oven beta including microwave and hot blasting, proximi day baking and Dehydrated bake. 122. The apparatus as defined in claim 1, wherein at least temporary reciprocal interlocking of the chamber walls results in frequency oscillations of the processing chamber, whether temporary or not, during wafer processing within the processing chamber. the method of. 123. at least temporarily the wafer in said processing chamber isolated from outside air; 123. The method of claim 122, wherein said wafer is maintained in a double floating state during processing. 124. 124. The method of claim 123, wherein the double floating condition is temporarily maintained in the processing chamber without ejecting processing media from the chamber. 125. 123. A method as defined in claim 122, wherein the wafer is double suspended in a sealed off processing chamber without supply of processing medium. 126. At the wafer processing position of the chamber block, the upper chuck The position of the chamber walls is maintained directly above the wafer, preventing up-setting during wafer processing. 123. A method as defined in claim 122, wherein the par treatment gap is less than or equal to 0.1 mm in height. 127. the chamber chamber through a peripheral membrane section lateral to the processing chamber; A central section of the lock connects to an outer section of said block and 123. The method of claim 122, wherein the central block section moves reciprocally. 128. During the process, the central block section is at least 128. The method of claim 127, wherein the motion at least temporarily moves reciprocally. 129. The reciprocating movement of the chamber wall causes compression/reduction located beside the wall. 128. The method of claim 127, wherein the method is carried out by means of a thrust medium directed or directed into the pressure chamber. 130. 130. The method of claim 129, wherein a combination of high, medium, and low frequency reciprocal motion of the chamber wall is achieved by a plurality of valsators. 131. During wafer processing, a small portion of the outer section of the chamber block 128. The method of claim 127, wherein at least a portion functions as a sealing section of the processing chamber. 132. 132. The method of claim 131, wherein during wafer processing, at least temporarily, discharge of processing media occurs from the processing chamber to a discharge passageway located in an upper wall of the lower chamber block outside of the seal section. 133. A gas lock compartment is located laterally beyond the discharge passageway, and sealing of the processing chamber and the discharge passageway is provided by a peripheral sealing section of the lower chamber block, which section is connected to the discharge passageway and the gas lock. between the upper chamber blocks and corresponding to the upper chamber block. The method according to claim 132. 134. During wafer processing in a shield-off processing chamber, said processing chamber a sealing off of the chamber, the discharge passageway and the gas lock compartment to the chamber block laterally beyond the gas lock compartment; 134. The method of claim 133, carried out by a third seal-off section. 135. During processing of the at least a portion of the wafer, an overpressure in the discharge passage is approximately equal to the required average pressure of the processing medium in the processing chamber. an overbreather in the gas-lock compartment is maintained higher than an overbreather in the discharge passage to prevent media from escaping laterally out of the discharge passage during processing of the wafer. 134. The method of claim 133. 136. 136. The method of claim 135, wherein the spent media is discharged into the discharge passageway and a reduced pressure is maintained therein while replacing the spent media in the processing chamber with a fresh supply of processing media. . 137. In order to move the chamber block without reciprocating motion in the vertical direction, the liquid medium is sent to the thrust chamber next to said chamber block and is 134. The method of claim 133. 138. the processing chamber for the pressure of the thrust medium in the thrust chamber; At least a positive difference in pressure on the processing medium in the chamber a lock at least temporarily moves partially over a mini-distance to expel spent processing media into the discharge passageway, while simultaneously forming a leakage gap between the gas lock compartment and the discharge passageway as a discharge gap; Said con 138. The method of claim 137, further comprising directing a gaseous medium from a part to the discharge passageway. 139. before supplying new processing medium to said processing chamber and/or At the end of the Effer process, the excess rinsing gas medium supplied centrally can cause discharging the used processing medium through a formed leak gap into the discharge passage, and at the same time discharging excess gas medium as rinsing medium from the gas lock compartment into the discharge passage; The emission line connected to 139. The method of claim 138, further comprising discharging the used processing media into a container. 140. Method according to one of the preceding claims, characterized in that the reciprocally moving chamber wall is achieved by the valsator moving in the vertical direction, independent of vibrations. 141. The processing chamber is filled with at least one medium, the chamber is at least substantially sealed off, and compression of at least a gaseous portion of the medium is applied to the chamber. 41. The method of claim 140, accomplished by moving one chamber wall to another chamber wall in sibling motion. 142. The valsator is built into a valsator chamber, and the valsator is vertical movement of the reciprocating chamber wall is achieved by a pressure difference in the medium 142. The method of claim 141. 143. The balsator is connected to the module housing by surrounding buffer blocks. The housing is air-tightly joined to the housing, and a slug is connected between the housing and the valsator. forming a thrust compartment to reduce the pressure of the medium in said thrust compartment; The force can be adjusted and the height thereof can be adjusted, and the movement of the valsator can cause the chamber to be adjusted. 141. The method of claim 140, providing a continuous vertical position to the bar wall. 144. the pressure of the medium in the thrust compartment and the balsator chamber; The pressure of the media in the processing chamber is combined to provide the required level of processing media in the processing chamber. 144. The method of claim 143, wherein the equalization pressure is determined. 145. 145. The method of claim 144, wherein the pressure of the medium in the valsator substantially corresponds to that in the thrust compartment. 146. The medium in the balsator chamber and the thrust compartment 146. The method of claim 145, wherein the reciprocating chamber wall is set parallel to another chamber wall. 147. supplying media to the thrust compartment; By pulling the compartment out of the 143. The method of claim 142, wherein the valsator is moved reciprocally at low frequency and large amplitude. 148. 147. The method of claim 146, wherein valsator vibrations are absorbed by a gas medium within the thrust compartment. 149. 148. The method of claim 147, wherein the frequency and amplitude modulation for vibrating the chamber wall comprises low, medium, and high frequency vibrations and large, medium, and low amplitudes. Law. 150, wherein a gaseous medium is used for at least a portion of the processing cycle of the wafer in the processing chamber, the layer of compressible medium in the lower processing gap supporting the wafer uniformly over its entire bottom surface as a cushion; request The method described in one of the requirements. 151. Part of the wafer processing involves a mixture of gaseous and vaporized media. 151. A method according to claim 150, wherein coalescence is used. 152. 151. The method of claim 150, wherein a mixture of gaseous and liquid media is used for a portion of the wafer processing. 153. 151. The method of claim 150, wherein a portion of the wafer processing cycle uses gaseous and liquid processing media. 154. 151. The method of claim 150, wherein all sides of the wafer are cleaned in the processing chamber. 155. In the upper processing gap, the top wall of the wafer is at least For example, cleaning, etching, developing, scrubbing the surface with aggressive media. 151. The method of claim 150, wherein the method is processed such as tripping. 156. By narrowing the processing chamber, the 151. The method of claim 150, wherein the increased pressure of the medium allows intensive treatment, exchange, and evacuation of the treatment medium. 157. 157. The method of claim 156, wherein the increased pressure of processing medium at least temporarily moves a non-vibrating chamber block to create a discharge gap for discharging processing medium from the processing chamber to the discharge passageway. 158. At least a portion of the processing medium is evacuated from the processing chamber and subsequently 158. The method of claim 157, wherein the vibrating chamber wall is moved away from other walls for concentrated supply of processing medium. 159. During processing, a compressive stroke of the upper chamber walls directs processing media from the upper processing gap along the vertical chamber sidewalls to the wafer edge, which 151. The method of claim 150, wherein a buffer compartment is created around the far edge. 160. During wafer processing, the average height of the upper processing gap is reduced to increase the resistance of its outer section to the media, processing is performed within this gap, the outer gap section is the first buffer compartment, and the wafer 160. The method of claim 159, further comprising: discharging processing medium into a second buffer compartment next to the buffer edge; and inversely supplying processing medium from the second compartment to the first compartment. 161. At least temporarily, the lower treatment gap is continuously fed with a concentrated supply of media to cause the average height of the upper treatment gap to be lower than the average height of the lower treatment gap. 161. The method of claim 160. 162. 161. The method of claim 160, wherein a fast reciprocating wafer lagging effect is used for wafer processing. 163. For some wafer processing, only the liquid medium is placed in the upper processing gap. 161. The method of claim 160, wherein the method comprises injecting into a cup. 164. During the upward expansion stroke of the upper chamber wall, said wall rises quickly and the wafer, due to its relatively large mass, remains behind, creating a vacuum bubble in the atomized medium whose bursting action is directly above the wafer. act on the boundary layer of the upper chamber to remove the medium from said layer and further reduce the compressive stress of said upper chamber wall. During the roking, the atomized liquid droplets reach the wafer at high speed, first rise, and the rupture of the vacuum valve causes the liquid droplets to reach the surface of the wafer. 164. Applying sufficient action to the entire surface of the wafer including the valleys and the boundary layer. How to put it on. 165. During wafer processing in at least a temporary processing chamber, a centrally injected medium gradually replaces the spent processing medium and releases the spent medium laterally into a buffer compartment beside the wafer edge. 151. The method of claim 150, further comprising: discharging into the discharge passageway. 166. Said exchange continues at least temporarily and is largely undisturbed. 166. The method of claim 165, wherein the method is performed as follows. 167. 166. The method of claim 165, wherein during wafer processing in the upper processing gap, used media is gradually replaced with a fresh, concentrated supply of media. 168. An electromagnet is used as a valsator, and the rise of the upper chamber wall is slowed down by a strongly compressed medium in the mini-gap between the stator and the yoke. 151. The method of claim 150. 169. A central wafer located inside the wafer processing module 2. The method according to claim 1, wherein a fur transport device transports the wafer to or from the processing chamber, horizontally or vertically. 170. The wafer is transported from the wafer transport unit to the central wafer. from there to the wafer transfer unit and from there to the wafer takeover unit. 170. The method of claim 169, wherein the method is carried out in this way. 171. The lower chamber block is lifted from the wafer takeover position. Claim 169 How to put it on. 172. The feed conveyance unit is located between the lower chamber block and the wafer. An upward slope is formed for the wafer from the cut to the processing chamber, and at the end of the wafer movement in suspension, the vertical sidewall of the processing chamber is Claim 171, further comprising a stopper against which the air is applied, and a means using a gas cushion is provided. How to put it on. 173. The lower chamber block cooperates with surrounding membrane sections to 173. The method of claim 172, wherein the wafer acts as a swivel axis. 174. a stopper section of the vertical side wall of the lower chamber block; A flow of media from a central supply channel inclined towards the wafer is directed towards the wafer. 174. The method of claim 173, wherein the wafer is provided with a motive force and an upward thrust to the wafer. 175. The inclined position of the central section of the lower chamber block with respect to the upper chamber block causes the wafer to stop against a vertical side wall of the processing chamber at the end of its floating movement, thereby causing to 170. The method of claim 169, wherein the wafer is centered in the wafer. 176. 176. The method of claim 175, wherein the wafer is moved through the subchamber block in a suspended state, and a temporarily tilted module causes gravity movement of the wafer from the processing chamber. 177. The tilted position of the lower chamber block section temporarily 177. The method of claim 176, wherein the tilted position of the joule is opposite. 178. During the wafer movement start phase, the wafer floating at the auxiliary tilt position of the central lower chamber block section increases at the start of movement. 178. The method of claim 177, wherein the method provides a gravitational effect. 179. While the wafer moves through the lower chamber block in a floating state, the vibration of the upper chamber wall causes a reciprocating movement of the medium towards the wafer, A method according to one of the preceding claims, for imparting a slowdown effect to the wafer. 180. 181. The method of claim 180, wherein the majority of the movement of the wafer through the lower chamber block is directly above a processing chamber recess in the upper chamber block. 181. After the wafer is stopped on a vertical side wall of the processing chamber, the 181. The method of claim 180, wherein the pulsating action of the par chamber walls causes the wafer to eventually retract by less than 0.3 mm, resulting in a substantially centered position of the wafer in the processing chamber. 182. the flow of gas medium from the supply orifice of said gas lock compartment; 181. The flow of gas medium from another supply orifice of the gas lock compartment aids in the suspension of the wafer and aids in its movement from the processing chamber. Method. 183. At the end of the movement of the wafer towards the processing chamber, medium is supplied from a central medium orifice in the upper chamber block. 183. The method of claim 182. 184. 183. The method of claim 182, wherein at the end of the movement of the wafer toward the processing chamber, the lower chamber block is also subjected to a vibrational action. 185. The feed transport unit comprises a wafer holding section for transporting wafers to the lower chamber block as part of the central wafer transport device. 171. The method of claim 170, comprising a wafer transfer arm, the arm in the wafer transfer position being located next to the lower chamber block. 186. The receiving and transporting unit is configured to transport a storage unit to the lower chamber block. The wafer transfer arm has a wafer takeover section. 86. The method of claim 1 85, wherein the arm in the - position is located next to the lower chamber block. 187. The feed transfer arm has a wafer transfer position located beyond the lower chamber block, and the feed transfer arm has a wafer holding section. along with the fur, on the outside of the lower chamber block on the inlet side of the module. 187. The method of claim 186, wherein the wafer takeover position is moved over the lower chamber block, lowered to a free pass position, and moved to the transfer position on the other side of the module. 188. The wafer takeover position of the receiving transfer arm is at the entrance of the apparatus, and the receiving transfer arm with a wafer holding section is located at the processing end. from the takeover position to the lower chamber block with the processed wafers. 188, wherein the transporting member is lowered to a free passage position and moved to a conveying position on the exit side of the device. How to put it on. 189. The wafer transfer arm has a sending transfer arm section and a receiving transfer section. A transport arm section is provided, and the wafer transport arm section is provided with a transport arm section. The sending conveyance arm section and the receiving conveyance arm section of the fur conveyance arm The "sings" are located on both sides of the arm and move the arm in a straight line. The wafer supplying position of the transfer arm has a drive mechanism for the transfer arm. The wafer takeover position receives the wafer from the wafer transfer device, and the wafer takeover position receives the wafer processed in the processing chamber and sends it in a floating state from the lower chamber block to the position. Processing receiving the efirr and directing it to the lower chamber block and to the processing chamber; 189. The method of claim 188, wherein the discharge position of the arm directs the processed wafer to a wafer takeover device on the exit side of the device. 190. After the wafer is in a centered position with respect to the processing chamber, the lower chamber block and the wafer are placed in a wafer take-off position on the inlet side of the apparatus. In order to return the transfer arm to the 200. The method of claim 189, wherein after movement of the system, the two are raised to a processing position. 191. After processing the wafer, the lower chamber block and the wafer are lowered to a wafer transfer position for linear wafer movement past the lower chamber block and onto the transfer arm, and the processed wafer is transferred to a take-up position on the transfer arm. After reaching the over position, the lower chamber block and wafer combination descends and sucks the wafers to be processed into the transfer arm, and said block automatically the arm is then lowered to the lower tip position along with the wafer. It moves beyond the chamber block to the wafer transfer position, releases the vacuum, sends the processed wafer toward the takeover device, and transfers it to the lower chamber. After the bubble lock is raised to the takeover position, the wafer to be processed is placed in front of the 191. The method of claim 190, wherein the method is transported to the block. 192. A method according to one of the preceding claims, wherein multiple processing modules are arranged in a tunnel and wafer transport between the modules takes place in a common transport device. 193. A single transfer arm is used for at least two modules, said arm The arm has a first arm section with wafer supply and discharge sections on each side, and a second arm section that is only wafer discharge, and such a structure The structure is repeated in subsequent modules, while the first discharge section aspirates the wafers processed in the first module and the second discharge section aspirates the wafers processed in the second module. 193. The method of claim 192. 194. The first processing module performs cleaning and etching using at least a liquid medium. Processes such as programming, developing or stripping are performed and the next module With gas and vapor phase media, cleaning, drying, and 194. The method of claim 193, wherein a treatment such as baking or dehydration baking is performed. 195. A method according to one of the preceding claims, in said apparatus comprising means for at least one of the following treatments, whether or not in combination: cleaning, ultrasonic cleaning, megasonic cleaning, plasma cleaning; etching. , plasma etching, reactive ion plasma, magnetron ion etching Dopant processing: various types of lithography including coating deposition; chemical vapor deposition, step-down or low pressure CVD epitaxial; CVD deposition of nitrides, oxides or polysilicon; physical vapor deposition, electron beam deposition, ion beam deposition, plasma deposition; high temperature evaporation systems; equipment with coating in vapor phase and/or gas phase defined as: wafer cassette, SHIF box with wafer russet, high vacuum Main processing module including system module, testing, inspection, metrology, marking or or other wafer transfer equipment such as handling and wafer transfer robots. Place. 196. Requests for interfacing with the wafer transport and takeover equipment listed below. The method described in claim 195: wafer cassette, SHIF box with wafer cassette, main processing module including high vacuum module, test, mark wafer handling, measuring or handling as well as wafer handling robots. Fur conveyance device.