JPH04501700A - How to increase the resistance of high Tc superconductors to environmental influences - Google Patents

How to increase the resistance of high Tc superconductors to environmental influences

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Publication number
JPH04501700A
JPH04501700A JP1505452A JP50545289A JPH04501700A JP H04501700 A JPH04501700 A JP H04501700A JP 1505452 A JP1505452 A JP 1505452A JP 50545289 A JP50545289 A JP 50545289A JP H04501700 A JPH04501700 A JP H04501700A
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Japan
Prior art keywords
superconductor
resistance
superconductors
environmental influences
increase
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Pending
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JP1505452A
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Japanese (ja)
Inventor
マイヤー,ヨアヒム
ムルガラジ,パンジャン
ラベナウ,アルブレヒト
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ヘキスト・アクチェンゲゼルシャフト
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Publication of JPH04501700A publication Critical patent/JPH04501700A/en
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/46Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with organic materials
    • C04B41/49Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes
    • C04B41/4905Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon
    • C04B41/4922Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon applied to the substrate as monomers, i.e. as organosilanes RnSiX4-n, e.g. alkyltrialkoxysilane, dialkyldialkoxysilane
    • C04B41/4933Compounds having one or more carbon-to-metal or carbon-to-silicon linkages ; Organo-clay compounds; Organo-silicates, i.e. ortho- or polysilicic acid esters ; Organo-phosphorus compounds; Organo-inorganic complexes containing silicon applied to the substrate as monomers, i.e. as organosilanes RnSiX4-n, e.g. alkyltrialkoxysilane, dialkyldialkoxysilane containing halogens, i.e. organohalogen silanes
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/82Coating or impregnation with organic materials
    • C04B41/84Compounds having one or more carbon-to-metal of carbon-to-silicon linkages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716Passivating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 高TC超伝導体の環境による影響に対する抵抗性を高める方法 本発明は、高TO超伝導体の環境による影響に対する抵抗性を高める方法に関す る。[Detailed description of the invention] How to increase the resistance of high TC superconductors to environmental influences The present invention relates to a method for increasing the resistance of high TO superconductors to environmental influences. Ru.

最近知られるようになった高Tc超伝導体技術をより広い範囲で使用する妨げに なっている主な難点の1つは、これらの材料の環境による影響、特に水分、に対 する抵抗性が足りないことである。impeding broader use of recently known high-Tc superconductor technology. One of the main difficulties in developing these materials is the resistance of these materials to environmental influences, especially moisture. There is a lack of resistance to

本発明は、超伝導体材料の゛表面に疎−水性表面保護基を導入することによって 、この問題を実質的に無くすことにはならないが、これを大幅に減じるものであ る。The present invention is achieved by introducing a hydrophobic surface protecting group onto the surface of a superconductor material. Although it does not effectively eliminate this problem, it does significantly reduce it. Ru.

本発明の方法の有利な具体例では、粉末、粒体、薄膜あるいはセラミック体の形 の高Tc超伝導体材料を、(CH3) 3S + (: Iのような有機ハロシ ランで処理する。超伝導体の表面上に吸着されたH2Oは、MCIの分離と共に この方法で除去され、(C)T3 ) s S i OH吸着質が生成される。In an advantageous embodiment of the method according to the invention, the A high Tc superconductor material of (CH3) 3S + (: I Process with a run. The H2O adsorbed on the surface of the superconductor is accompanied by the separation of MCI. In this way, it is removed and (C)T3)sSiOH adsorbate is produced.

表面水酸化物基(一般には酸化物の表面基)も、HClの分離と共に変る。この 方法では、疎水性(CH3) 3 S i O基が保護すべき表面に結合する。The surface hydroxide groups (generally oxide surface groups) also change with HCl separation. this In the method, hydrophobic (CH3)3SiO groups are attached to the surface to be protected.

このようにして処理された超伝導体は水にぬれず、未処理材料に比べて、環境に よる影響に対してかなり高い抵抗性を示す。Superconductors treated in this way do not get wet with water and are more environmentally friendly than untreated materials. shows a fairly high resistance to the effects of

本発明の好ましい具体例では、環境による影響から保護すべき超伝導体材料を、 実際の表面保護処理を行なう前に、H2Oで簡単な予備処理する。これは、湿っ たアルゴンの流れ、例えばH2Oで飽和したもの、の中で処理することによって 行なうと都合がよい。この処理工程は、2価の元素(E)、あるいは3価の元素 (M)、がわずかに不足した酸化性高Tc超伝導体材料の場合に特に効果的であ る。EあるいはMがわずかに不足したそのような材料は、ドイツ特許出願P3. 805,954゜1−45にたいへん詳しく記載されている。特に好ましい材料 はY Ra 1.95Cu s O6,45+0.25である。この場合、Ra (OH)zまたはRaC0a−が形成される恐れもない。In a preferred embodiment of the invention, the superconductor material to be protected from environmental influences is Before carrying out the actual surface protection treatment, a simple pretreatment with H2O is performed. This is damp by treatment in a stream of argon, e.g. saturated with H2O. It is convenient to do so. This treatment process is performed using divalent elements (E) or trivalent elements. (M) is particularly effective in the case of oxidizing high Tc superconductor materials that are slightly deficient in Ru. Such materials with a slight deficiency in E or M are described in German patent application P3. 805,954°1-45. Particularly preferred materials is Y Ra 1.95 Cu s O6,45+0.25. In this case, Ra There is also no risk of (OH)z or RaC0a- being formed.

実施例: 粉末、粒体、薄膜または成形焼結体の形のY Ra 2−F 1.9 5c u a Ox (xは7よりやや少ナイ)超伝導体材料を数分間、湿った アルゴンの流れに当て、乾燥しそして次に約1時間、液体シラン(CH3) 3  S 1C1(sic)に浸漬する。次に、過剰のシランおよび形成された塩酸 MCIを減圧上除去する。Example: Y Ra 2-F 1.9 in the form of powder, granules, thin film or shaped sintered body 5c u a Ox (x is slightly less than 7) The superconductor material is moistened for several minutes. Dry under a stream of argon and then apply liquid silane (CH3) for about 1 hour. Immerse in S1C1 (sic). Then excess silane and the formed hydrochloric acid MCI is removed under reduced pressure.

このようにして「含浸した」超伝導体酸化物は著しく疎水性であり、液体の水に よってぬれない。1週間H20で処理した後でも、性質の大幅な悪化は観察され なかった。Superconducting oxides "impregnated" in this way are extremely hydrophobic and resistant to liquid water. Therefore, it cannot get wet. Even after one week of treatment with H20, no significant deterioration of properties was observed. There wasn't.

上記トリメチルグロロシランの代わりに、他の適当なアルキルハロシランまたは ハロゲン化炭化水素、例えば第3ブチルクロリド、(CT(3) 3 CCl  、ももちろん使用しつる。Instead of the above trimethylglorosilane, other suitable alkylhalosilanes or Halogenated hydrocarbons, such as tert-butyl chloride, (CT(3)3CCl) , also of course use vine.

補正書の翻訳文提出書 (特許法第184条の8) 平成 2年/1月 7日Submission of translation of written amendment (Article 184-8 of the Patent Act) January 7, 1990

Claims (7)

【特許請求の範囲】[Claims] 1.高Tc超伝導体の環境による影響に対する抵抗性を高める方法であって、上 記超伝導体の表面に疎水性表面保護基をもたらすことを特徴とする上記の方法。1. A method of increasing the resistance of high Tc superconductors to environmental influences, comprising: The above method, characterized in that a hydrophobic surface protecting group is provided on the surface of the superconductor. 2.超伝導体をハロゲン化炭化水素または有機ハロシラン、特にアルキルハロシ ラン、で処理することを特徴とする、請求項第1に記載の方法。2. The superconductor can be prepared using halogenated hydrocarbons or organohalosilanes, especially alkylhalosilane. 2. A method according to claim 1, characterized in that the process is carried out with a run. 3.超伝導体を(CH3)3SiClで処理することを特徴とする、請求項第2 に記載の方法。3. Claim 2, characterized in that the superconductor is treated with (CH3)3SiCl. The method described in. 4.超伝導体を、表面保護処理する前に、H2Oで予備処理することを特徴とす る、請求項第1、2または3に記載の方法。4. It is characterized by pre-treating the superconductor with H2O before surface protection treatment. 4. The method according to claim 1, 2 or 3. 5.予備処理を湿った不活性ガスの流れを用いて行なうことを特徴とする、請求 項4に記載の方法。5. Claim characterized in that the pretreatment is carried out with a stream of moist inert gas. The method described in Section 4. 6.超伝導体が酸化性材料であることを特徴とする、前記請求項のうちの1つに 記載の方法。6. According to one of the preceding claims, characterized in that the superconductor is an oxidizing material. Method described. 7.超伝導体材料が理論割合より少ない2価元素を含むことを特徴とする、請求 項第6に記載の方法。7. Claim characterized in that the superconductor material contains less than the theoretical proportion of divalent elements The method according to item 6.
JP1505452A 1988-05-10 1989-05-10 How to increase the resistance of high Tc superconductors to environmental influences Pending JPH04501700A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3816029A DE3816029A1 (en) 1988-05-10 1988-05-10 METHOD FOR INCREASING THE RESISTANCE OF HIGH-T (DOWN ARROW) C (DOWN ARROW) SUPERLADES AGAINST ENVIRONMENTAL INFLUENCES
DE3816029.3 1988-05-10

Publications (1)

Publication Number Publication Date
JPH04501700A true JPH04501700A (en) 1992-03-26

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ID=6354116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1505452A Pending JPH04501700A (en) 1988-05-10 1989-05-10 How to increase the resistance of high Tc superconductors to environmental influences

Country Status (4)

Country Link
EP (1) EP0413740A1 (en)
JP (1) JPH04501700A (en)
DE (1) DE3816029A1 (en)
WO (1) WO1989010909A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02281511A (en) * 1989-03-09 1990-11-19 Dow Corning Corp Method of protecting superconductor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4117489A1 (en) * 1991-05-28 1992-12-03 Siemens Ag Chemical polishing of surfaces of high temp. ceramic superconductors - using dilute acid which is further diluted and removed followed by rinsing with solvent
DE4304573A1 (en) * 1993-02-16 1994-08-18 Forschungsgesellschaft Fuer In Passivation layer for high-temperature superconductors and method for applying it

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1060424A (en) * 1952-07-19 1954-04-01 Rhone Poulenc Sa Process for waterproofing solid bodies
FR1180848A (en) * 1956-08-09 1959-06-09 Thomson Houston Comp Francaise Water resistant mica paper
FR1323478A (en) * 1962-06-04 1963-04-05 Dow Corning Treatment of materials with alkoxysilanes entrained with water vapor
DE3635260A1 (en) * 1986-10-16 1988-04-28 Wacker Chemie Gmbh METHOD FOR MAKING WATER REPELLENT OF SUCTIONABLE INORGANIC CONSTRUCTION MATERIALS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02281511A (en) * 1989-03-09 1990-11-19 Dow Corning Corp Method of protecting superconductor

Also Published As

Publication number Publication date
EP0413740A1 (en) 1991-02-27
DE3816029A1 (en) 1989-11-16
WO1989010909A1 (en) 1989-11-16

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