JPH0448716A - Substrate holder and exposure device with said holder - Google Patents

Abstract

PURPOSE:To obtain a substrate holder, in which contact heat resistance can be lowered and the accuracy of pattern transfer is improved, by providing a control means controlling the opening and closing of a blow-off quantity adjusting valve and a suction-quantity adjusting valve from the output signal of a pressure sensor. CONSTITUTION:In the substrate holder, a plurality of blow-off ports 7 and a plurality of suction ports 3 are formed to the chuck surface 6 of a susceptor l, and the pressure of a fine space formed between the rear of a substrate 51 and the chuck surface 52 of a susceptor 50 is detected by a pressure sensor 11. The pressure of the fine space is kept at a constant value or more by opening and closing a blow-off quantity adjusting valve 14 installed on its midway of a blow-off pipe g connecting a plurality of the blow-off ports and outside space or a in response to detecting pressure and a suction-quantity adjusting valve 10 mounted on its midway of a suction pipe 4 connecting a plurality of the suction ports and a vacuum source 9 by control means 15, 16, thus keeping contact heat resistance between the substrate and the susceptor at a constant value or less.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pin-chuck type substrate holding device that holds a substrate by vacuum suctioning the back side of the substrate, and an exposure apparatus having the device. .

[Conventional technology]

In exposure equipment of semiconductor manufacturing equipment, a substrate holding device used when transferring a mask pattern onto a substrate such as a wafer is a substrate holding device that holds the back side of the substrate by vacuum suction (for example, Japanese Patent Publication No. 1-14703). Publications) are often used.

Generally, when a substrate is held by a substrate holding device, if the contact thermal resistance between the substrate and the holding stand of the substrate holding device is large, the exposure energy when transferring a mask pattern to the substrate will be transferred from the substrate to the holding stand. As a result, the temperature of the substrate increases and thermal deformation occurs, resulting in a deterioration of pattern transfer accuracy. In particular, in the case of a substrate holding device using vacuum suction,
Since there is no gas as a heat medium for dissipating heat in the microspace formed between the back surface of the substrate and the chuck surface of the holding table (the surface facing the adsorbed substrate), the substrate The pattern transfer accuracy deteriorates significantly due to temperature rise.

Therefore, we have developed a substrate holding device that can control the temperature of vacuum-adsorbed substrates during exposure and also maintain the flatness of the substrates.
A pin chuck type substrate holding device has been proposed. The substrate holding device uses temperature-controlled water (hereinafter referred to as "temperature-controlled water").
It is called. ) is allowed to flow through a water channel provided in the holding stand of the substrate holding device to control the temperature of the substrate, and
By providing a plurality of protrusions on the chuck surface of the holder, the flatness of the substrate is maintained and dirt and the like are prevented from entering between the chuck surface and the substrate.

FIG. 9 is a schematic configuration diagram showing one of the conventional examples of a pin chuck type substrate holding device.

This substrate holding device includes a holding table 1 having an outer peripheral wall 101a.
01, 21 cylindrical protrusions 102 provided symmetrically on the chuck surface 106 of the holding base 101, and 21 cylindrical protrusions 102 provided symmetrically between the protrusions 102 on the chuck surface 106 of the holding base 01. The 16 bow openings 103 and the 1
A suction pipe 104 connecting six suction ports 103 and a vacuum generation source (not shown), and each of the protrusions 1 in the holding table 101
02, and a water passage 105 through which temperature-controlled water is circulated from a constant temperature bath (not shown), which is piped to pass under the water passage 102.

Here, the outer peripheral wall 101a and each of the protrusions 102 are at the same height, and their surfaces (hereinafter referred to as "contact surfaces") that come into contact with the substrate to be vacuum-adsorbed are finished flat. There is.

In this substrate holding device, the substrate to be vacuum suctioned is attached to the outer circumferential wall 101a of the holding table 1 ( ) 1 and to each protrusion 10 .
It is transported by a known transport hand (not shown) to a position where it contacts the contact surface of No. 2. Thereafter, the suction v104 is communicated with a vacuum generation source (not shown), so that the back surface of the substrate is vacuum-adsorbed onto the holding table 101. Further, the temperature of the substrate during exposure is controlled by circulating temperature-controlled water through the water channel 105 to keep the temperature of the holding table 101 (particularly, each of the projections 102) constant.

[Problem to be solved by the invention]

However, in the above conventional example, although the contact surface of each protrusion 102 is finished flat, there are minute irregularities and undulations on the contact surface, and there are also minute irregularities and undulations on the back surface of the substrate. Therefore, when the back surface of the substrate is vacuum-adsorbed, the actual contact area becomes extremely small compared to the apparent area. As a result, the contact thermal resistance between the substrate and each of the protrusions 102 increases, so the water channel 1
Even if the temperature of each protrusion 102 is kept constant by circulating temperature-controlled water in 05, heat does not escape from the substrate to each protrusion 102, so the temperature of the substrate that rises during exposure is lowered. The problem is that I can't.

In particular, X-ray exposure equipment (for example,
In exposure apparatuses using the proximity method, such as those used in 91), in which a mask and a substrate are placed at a distance of several tens of microns and a mask pattern is transferred, there is no heat between the mask and the substrate. Since the temperature of the mask follows the temperature of the substrate due to the presence of gas as a medium, an increase in the temperature of the substrate directly induces thermal distortion of the mask.

For example, when the holding stand +01 and each protrusion 102 shown in FIG. Thermal resistance is 10” [deg-cm”/W
]Met. Even if the temperature of the holding table 101 is constant, this contact thermal resistance value is 100 [mW
When energy of /cm21 is input, the temperature of the substrate rises by several degrees, and thermal distortion of the mask caused by the rise in temperature of the substrate causes pattern positional deviation, deteriorating pattern transfer accuracy. do.

An object of the present invention is to provide a substrate holding device that can reduce contact thermal resistance and improve pattern transfer accuracy, and an exposure apparatus having the device.

[Means for Solving the Problems] The substrate holding device of the present invention is a pin chuck type substrate holding device that holds the substrate by vacuum suction on the back side of the substrate, and includes: a plurality of blow-off ports, a blow-off pipe that connects the plurality of blow-off ports with an external space or a cylinder, a blow-out amount control valve provided in the middle of the blow-off pipe, and each blow-off port on the chuck surface of the holding base. A plurality of suction ports each provided at a portion capable of absorbing gas blown out from the outlet, a suction pipe connecting the plurality of suction ports and a vacuum generation source, and a suction amount provided in the middle of the suction pipe. a control valve; a pressure sensor that detects the pressure in a microspace formed between the back surface of the substrate and the chuck surface of the holding base; and the control valve and the suction amount control based on the output signal of the pressure sensor. and control means for controlling opening and closing of the valve.

Further, the control means is configured such that the pressure in the micro space is 50 [
The opening and closing of the blowout amount regulating valve and the suction amount regulating valve may be controlled so that Torr is greater than or equal to Torr1.

Furthermore, the air outlet and the suction port are provided in each space surrounded by the four adjacent protrusions of the microspace, and the position of the air outlet is higher than the position of the suction port. You can leave it there.

An exposure apparatus of the present invention includes a substrate holding device according to any one of claims 1 to 3.

[Function] In the substrate holding device of the present invention, a plurality of air outlets and a plurality of suction ports are provided on the chuck surface of the holding table, and the suction ports are formed between the back surface of the substrate and the chuck surface of the holding table. The pressure in the micro space is detected by a pressure sensor, and according to the detected pressure, a blowout amount control valve provided in the middle of a blowout pipe connecting the plurality of blowout ports and the external space or the cylinder and the plurality of suction The control means opens and closes the suction amount adjustment valve provided in the middle of the suction tube that connects the mouth and the vacuum source, so that the pressure in the microspace can be maintained at a certain value or higher. The contact thermal resistance between the holding stands can be kept below a certain value.

Further, the control means controls opening and closing of the blowout amount control valve and the suction amount control valve so that the pressure in the microspace becomes 50 [Torr1 or more], thereby controlling the proximity In the substrate holding device for an exposure apparatus according to this method, the contact thermal resistance can be made small to the extent that pattern transfer accuracy does not deteriorate.

Furthermore, the position of the air outlet is set higher than the position of the suction port, and the air outlet and the suction port are provided in each space surrounded by four adjacent protrusions of the microspace. As a result, the gas blown out from the air outlet can be sucked from the suction port without any delay, so that the pressure in the microspace can be kept more constant.

By having the substrate holding device according to any one of claims 1 to 3, the exposure apparatus of the present invention can perform exposure while keeping the contact thermal resistance below a certain value. Transfer accuracy can be improved.

[Example] Next, embodiments of the present invention will be explained with reference to the drawings.

FIG. 1 is a schematic diagram showing a first embodiment of the substrate holding device of the present invention.

The substrate holding device of this embodiment includes a holding table 1 having an outer circumferential wall 1a, and a plurality of cylindrical columns (nine in the cross section shown in the figure) provided symmetrically on the chuck surface 6 of the holding table 1. Protrusion 2
It is similar to the conventional one shown in FIG. 9 in that it has a water channel 5 piped to pass under each of the protrusions 2, and a constant temperature bath 12 for circulating temperature-controlled water in the water channel 5. However, a plurality of blow-off lowers (five in the cross section shown in the figure) provided on the chuck surface 6 of the holding table 1, a blow-off pipe 8 connecting each blow-off lower with the external space, A blowout amount adjusting valve 14 provided in the middle of the blowout pipe 8, and a plurality of blowout control valves provided on the chuck surface 6 of the holding base 1 alternately with each blowout lower so as to absorb the gas blown out from each blowout lower. A suction port 3 (five in the cross section shown in the figure), a suction pipe 4 connecting each suction port 3 and a vacuum generation source 9, and a suction amount adjustment valve provided in the middle of the suction pipe 4. 10, the suction amount adjusting valve lO of the suction pipe 4 and the A pressure sensor 11 is provided between each suction port 3 and detects the pressure inside the suction pipe 4, and the output signal of the pressure sensor 11 is used to open/close the blowout amount control valve 14 and the suction amount control valve 1o. A microprocessor (hereinafter referred to as r
It is called cPUJ. ) 15 and a controller 16, which is different from the conventional one.

Next, before explaining the operation of this embodiment, the temperature rise of the mask during exposure in the exposure apparatus using the proximity method will be explained in detail with reference to FIGS. 3 to 5.

For simplification, as shown in FIG. 4, the temperature of the surface on the side opposite to the chuck surface 52 of the holding table 5o, which is plate-shaped and has a thickness of tc, is kept constant with temperature-controlled water. Assume that the back surface of a substrate 51 having a thickness tw is attracted to the chuck surface 52 of the substrate 51, and a mask 53 is placed at a position separated from the front surface of the substrate 51 by a broximity gap g.

Here, a position X is taken toward the mask 53 with the surface on the side opposite to the chuck surface 52 of the holding table 50 as the origin, a position of the chuck surface 52 of the holding table 50 is xl, and the position of the substrate 51 is
The position of the surface of X2. FIG. 3 shows a graph showing the relationship between the temperature T during exposure and the position X, assuming that the position of the surface of the mask 53 on the substrate 51 side is x3.

The following can be seen from Figure 3.

(1) At position x=0, the temperature of the holding table 50 is kept constant by temperature-controlled water, so the temperature T=T0.

(2) Inside the holding table 50, the temperature T increases in proportion to the position X, and the position X of the chuck surface 52 of the holding table 5o is
, the temperature T=T, but the back surface of the substrate 51 at the same position X=X has a temperature T due to the contact thermal resistance mentioned above.
= T,.

(T++>Tr).

(3) Inside the substrate 51, the temperature T increases in proportion to the position X, and at a position X=Xz on the surface of the substrate 51, the temperature T'' Tt.

(4) Also in the space between the substrate 51 and the mask 53 (hereinafter referred to as the "gap"), since gas as a heat medium exists, the temperature T increases in proportion to the position Position of the surface of the mask 53 on the substrate 51 side X=X3
The temperature at T=T.

Therefore, the holding table 50. The thermal conductivity of the substrate 51 and the gas existing between the gap is λ. ,
λ and λ1, the contact thermal resistance is R1, the contact area per unit area between the holding table 50 and the substrate 51 is S, and the intensity of X-rays irradiated to the mask 53 per unit area per unit time. If it is 0, then Ts Tt='-Qy λ.

Therefore, the temperature rise ΔT of the mask 53 during exposure is
(=73 To ) is expressed by the following equation.

ΔT=(any + ・nee + 1 sea tendan − → ・Qa (1
)ne S λ, λ6 Also, the thermal strain Δ of the mask 53 due to the temperature increase
ρ is expressed as Δ12=a·ΔT−ε (2), where α is the linear expansion coefficient and 24 is the exposure angle of view.

Here, helium gas (hereinafter referred to as rHe gas).

) The exposure conditions in the atmosphere are tc = 0.2 [cml λ, ==0.245 (W/cm-degltw =
=0.05 [cml λw =0.84 [W/cm-deg1g=lo[
μml λg = 1.42X 10-' [W/cm-de
glS = 0.5 [cm"l Qy = 0.1 [W/cm"l, linear expansion coefficient a = 2.7 x 10-' (1/
Thermal strain Δβ of the mask 53 during exposure using a silicon nitride (SisNJ mask) with degl and exposure angle of view 2 I2 = 30 mm will be determined.

FIG. 5 shows the relationship between the pressure of the microspace and the contact thermal resistance R when Ie gas or air is confined in the microspace formed between the substrate 51 and the chuck surface of the holding table 50. It is a graph showing an example of measurement. However, the pressure difference between the front and back surfaces of the substrate 51 is 150 [Tor].
The pressure in the space on the surface side of the substrate 51 is controlled so that rl is constant.

From FIG. 5, it can be seen that in a He gas atmosphere, the microspace is vacuumed (that is, the pressure Jv
The contact thermal resistance R when set to O[Torrl] is 10
” [deg-cm”/Wl, so this value is (
1) Temperature rise Δ of the mask 53 during exposure by substituting into the equation
When T is calculated, ΔT ~ 20 [deg], and the thermal strain Δρ of the mask 53 during exposure at this time
From equation (2), Δβ=0.81 [μm].

For example, if the alignment accuracy in the X-ray exposure device is set to 0,
．． (If it is about 16 μml, the maximum allowable value Δβ of the thermal strain Δ4 is about 0.025 μml, so the thermal strain Δβ=0.81 [μml is the maximum allowable value Δt
It significantly exceeds 2o.

Therefore, from equations (1) and (2), the thermal strain Δβ is the maximum allowable value Δ°C. When the following contact thermal resistance R is calculated, it is expressed as follows. Therefore, when the above exposure conditions are substituted into equation (3), R≦2.3 [deg-cn''/Wl.

Therefore, the contact thermal resistance R is 2.3 [deg-cm”
When the pressure in the minute space, which is /w3, is determined from FIG. 5, it is found that the pressure is 50 Torr or more.

Furthermore, from FIG. 5, even in air, the contact thermal resistance R can be reduced to 2.3 [deg-cm"/W] or less by setting the pressure in the microspace to 50 [Torr1 or more]. I understand.

Next, the operation of the substrate holding device of this embodiment will be explained using FIG. 1.

This substrate holding device uses a vacuum suction substrate (not shown).
is a known transfer hand (not shown) until the substrate contacts the outer peripheral wall 1a of the holding table 1 and the contact surface of each protrusion 2.
It is transported by.

Thereafter, the CPU 15 controls the controller 16 to open the suction amount control valve 10. When the suction amount control valve 10 is opened, the suction pipe 4 is communicated with the vacuum source 9, and the gas existing in the microspace formed between the back surface of the substrate and the chuck surface 6 of the holding table 1 is removed. The pressure in the microspace is reduced by suction, and the resulting pressure difference between the front and back surfaces of the substrate causes the substrate to be attracted and held on the holding table 1. Further, the temperature of the substrate during exposure is controlled by circulating temperature-controlled water in the water channel 5 using a constant temperature bath 12 to control the temperature of the substrate during exposure.
In particular, this is done by keeping the temperature of each of the protrusions 2) constant.

When the vacuum suction of the substrate is started in this way, the CPU 15 controls the pressure sensor 11 at a predetermined timing to reduce the contact thermal resistance R to 2.3 [deg-cm2/W] or less. The pressure within the suction tube 4 (that is, the pressure within the microspace) indicated by the output signal is monitored by capturing the force signal, and the suction amount is adjusted such that the pressure in the microspace is always 50 Torr or more. Control valve 1
0 and the controller 16 which opens and closes the blowout amount control valve 14.

In this embodiment, the blow-off pipe 8 connects each blow-off lower to the external space (the space on the surface side of the substrate vacuum-adsorbed).
By connecting a For example, when the gas is to be sent to a gas cylinder, a cylinder filled with the gas to be sent and each blow-off lower may be connected through the blow-off pipe 8.

FIGS. 6A and 6B are schematic configuration diagrams showing the central portion of a holding table 61 in a second embodiment of the substrate holding device of the present invention.

In the substrate holding device of this embodiment, the air outlet 67 and the suction port 63
are provided in each space surrounded by four adjacent protrusions 62 in a microspace formed between the back surface of the substrate (not shown) and the chuck surface 66 of the holding table 61, and This differs from the one shown in FIG. 1 in that the blow-off port 67 is located higher than the suction port 63.

That is, the suction port 63 is provided at the center of the chuck surface 66 for each of the enclosed spaces. In addition, the air outlet 67 is connected to each protrusion 62 as shown in FIG. 6(A).
Four protrusions are provided on the top, bottom, left and right sides of the figure at intermediate heights between each of the protrusions 62 and the chuck surface 66.

In this embodiment as well, the pressure in the microspace is always maintained at 50%.
[By adjusting the amount of gas blown out from the blow-off port 67 and the amount of gas sucked in from the suction port 63 so that Torr is 1 or more, the same effect as shown in FIG. 1 can be obtained. In addition, the air outlet 67 and the suction port 63
By providing the air outlet 67 for each of the enclosed spaces and the height of the air outlet 67 being higher than the height of the suction port 63, the gas blown out from each air outlet 67 can be smoothly transferred to the suction port. Since the suction can be performed from 63, the pressure in each of the microspaces can be kept more constant, so that the cooling efficiency of the vacuum-adsorbed substrate can be further improved.

Note that the number of air outlets 67 formed in each of the enclosed spaces may be other than four (for example, two).

FIG. 7 is a sectional view showing the central portion of a holding table 71 in a third embodiment of the substrate holding device of the present invention.

In the substrate holding device of this embodiment, the shape of each protrusion 72 is mushroom-shaped, that is, the width of the upper end of each protrusion 72 is wider than the width of the other part, as shown in FIG. This is different from the second embodiment.

Therefore, in the first embodiment shown in FIG. 1 and the second embodiment shown in FIG. However, in this embodiment, the gas blown out in the direction of the substrate from each blow-off lower 7 is guided by hitting the upper end of each projection 72, so that the gas is prevented from hitting the substrate directly. Therefore, vibration of the substrate can be prevented.

Note that the number of blowing lowers 7 and suction lowers 3 formed in each of the enclosed spaces may be other than four (for example, two).

FIG. 8 is a sectional view showing the central portion of a holding table 81 in a fourth embodiment of the substrate holding device of the present invention.

In this embodiment, adjacent 4
A protrusion 80 for an air outlet 87 whose height is lower than that of the protrusion 82 is provided in each space surrounded by four protrusions 82, and each protrusion 80 has four air outlets 87 (left and right in the figure). and four bow openings 83 (left and right in the figure and front and rear in the drawing) around the protrusion 80 in the enclosed space. However, the above-mentioned 1. Second. This is different from the third real bar example.

In this embodiment as well, since the gas blown out from each outlet 87 is blown out in a direction parallel to the back surface of the substrate, it is possible to prevent the gas from directly hitting the substrate, thereby preventing vibration of the substrate. be able to.

Note that the number of air outlets 87 and suction ports 83 formed in each of the opened spaces may be other than four (for example, two).

FIG. 2 is a schematic diagram showing an embodiment of an exposure apparatus having a substrate holding device of the present invention.

The exposure apparatus of this embodiment has a holding table 21. Suction pipe 24, waterway 25. Blowout pipe 28. Vacuum source 29゜Suction amount control valve 30
．． Pressure sensor 31. Constant temperature bath 32, blowout amount control valve 34. C
This is an X-ray exposure apparatus having the substrate holding device shown in FIG. 1, which includes a PU 35 and a controller 36.

In addition to the substrate holding device, the exposure apparatus of this embodiment also includes:
A chamber 41 whose interior is filled with helium (He) gas that transmits X-rays generated by a storage ring, etc., and a beryllium window (hereinafter referred to as " ) 42,
A chamber pressure sensor 43 that detects the pressure inside the chamber 41, a He cylinder 44 that supplies He gas into the chamber 41, and a He control valve 45 that adjusts the amount of He gas supplied into the chamber 41. and the He control valve 4
5, and a He controller 46 for opening and closing.

Note that the CPU 35 controls the controller 36 that opens and closes the suction amount adjustment valve 30 and the blowout amount adjustment valve 34.
In addition to controlling the He controller 46, it also controls the substrate 47 for transferring the mask pattern.
is vacuum-adsorbed to the holding table 21 of the substrate holding device, and the mask 48 is placed in the chamber 41 with a certain gap from the substrate 47.

Next, the operation of the exposure apparatus of this embodiment will be explained.

Before transferring the mask pattern to the substrate 47, the CPU
35 takes in the output signal of the chamber internal pressure sensor 43, and controls the He controller 46 (according to the output signal) to open and close the He control valve 45, thereby controlling the chamber 4.
Maintain the pressure inside 1 at 200 Torrl. Thereafter, when the substrate 47 to be vacuum-adsorbed is transported to the illustrated position by a known transport hunt (not shown), the CPU 35
controls the controller 36 to open the suction amount control valve 30.

When the suction amount adjusting valve 30 is opened, the suction pipe 24 is communicated with the vacuum source 29, and the back surface of the substrate 47 and the holding table 21 are connected to each other.
H existing in the microspace formed between the chuck surface and the chuck surface of
The e-gas is sucked and the pressure in the microspace is reduced, and the resulting pressure difference between the front and back surfaces of the substrate 47 causes the substrate 47 to be attracted and held by the holding table 21 .

When the vacuum suction of the substrate 47 is started in this way, the contact thermal resistance R between the substrate 47 and the holding table 21 is increased to 2.
3 [deg-cm”/W] or less, the CP
At t135, the output signal of the pressure sensor 31 is taken in at a predetermined timing, and the pressure in the suction tube 24 (that is, the pressure in the microspace) indicated by the output signal is monitored, and the pressure in the microspace is always maintained. 50 [Torrl
The suction amount control valve 30 and the blowout amount control valve 3
4. Controls the controller 36 that opens and closes 4.

After keeping the pressure in the microspace constant, the X-rays are
By irradiating the substrate 47 through the window 42 and the mask 48, the mask pattern is transferred. At this time, the temperature of the substrate 47 during exposure is controlled by a constant temperature bath 32.
This is done by circulating temperature-controlled water through the water channel 25 to keep the temperature of the holding table 21 constant.

In this embodiment, the pressure inside the chamber 41 is 20
0 [Torrl, and the pressure in the microspace becomes 50 Torrl.
[Torrl], but the chamber 4
The difference between the pressure inside the substrate 4 and the pressure inside the microspace is the difference between the pressure inside the substrate 4
7, the pressure in the chamber 41 and the pressure in the microspace are other than that (however, the pressure in the microspace is 50 [Tor]).
r] or more).

In the embodiment of the exposure apparatus of the present invention described above, the one shown in FIG. 1 is used as the substrate holding device, but the substrate holding device shown in FIG. 6, FIG. 7, or FIG. The substrate holding device of the embodiment described above may also be used.

Furthermore, although an X-ray exposure apparatus is shown as an embodiment of the exposure apparatus of the present invention, for example, in an exposure apparatus that uses light, the substrate is kept at a constant temperature and the pressure difference between the front and back surfaces of the substrate is used. It is applicable to all exposure apparatuses that have a substrate holding device that holds the substrate.

[Effects of the Invention] Since the present invention is configured as described above, it produces the following effects.

In the substrate holding device of the present invention, a plurality of air outlets and a plurality of suction ports are provided on the chuck surface of the holding table, and a micro space formed between the back surface of the substrate and the chuck surface of the holding table is provided. Pressure is detected by a pressure sensor, and according to the detected pressure, a blowout amount control valve provided in the middle of a blowout pipe connecting the plurality of blowout ports and an external space or a cylinder, and a vacuum between the plurality of suction ports and The contact thermal resistance between the substrate and the holding table can be kept below a certain value by the control means opening and closing a suction amount regulating valve provided in the middle of the suction pipe connecting the generating means. Since thermal distortion of the mask due to the temperature rise of the substrate can be prevented, pattern transfer accuracy can be improved.

By having the substrate holding device according to any one of claims 1 to 3, the exposure apparatus of the present invention can perform exposure while keeping the contact thermal resistance below a certain value. This has the effect of improving transfer accuracy.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a first embodiment of a substrate holding device of the present invention, FIG. 2 is a schematic diagram showing an embodiment of an exposure apparatus having a substrate holding device of the present invention, and FIG. A graph showing the relationship between temperature and position during exposure. Figure 4 shows the meaning of position X, which is the horizontal axis of the graph shown in Figure 3. Figure 5 shows the relationship between the chuck surface of the substrate and the holding table. FIG. 6 is a graph showing an example of the relationship between the pressure of the microspace and the contact thermal resistance when He gas or air is confined in the microspace formed between the substrate holding devices of the present invention. FIG. 7 is a schematic configuration diagram showing the central part of the holding base in Example 2, in which (A) is a top view thereof, (B) is a sectional view taken along line AA' in (A), and FIG. FIG. 8 is a sectional view showing the central part of the holding stand in the third embodiment of the substrate holding apparatus of the present invention; FIG. The figure is a schematic configuration diagram showing one of the conventional examples of a pin chuck type substrate holding device, in which (A) is a top view thereof, and (B) is a sectional view taken along the line AA' in (A). . 1, 21.50.61.71.81... Holding stand, 18
... Outer wall, 2.62.72.82... Projection, 3, 63.73.83... Suction port, 42464
7484...Suction pipe, 52565.75.85...Waterway, 6,52.66,76,86...Chuck surface, 7,6
7, 77, 87... Air outlet, 8, 28.68.78
．． 88...Blowout pipe, 9.29...Vacuum source, 0.30...Suction amount adjustment valve, 131...Pressure sensor, 12.324.34...
・Blowout amount control valve, 535... CPU, 6.36... Controller, 41... Chamber, 42... Be window, 4
3... Chamber pressure sensor, 44... He cylinder, 45... He control valve, 46... He controller, 47.51...
Substrate, 48, 53...Mask, 80...Protrusion, g...Proximity gap, tc, tw...Thickness, X, X+, Xs, Xs''・Position, T, T,, T ,
,, T*, T,...Temperature,... Constant temperature chamber, R... Contact thermal resistance.

Claims (1)

[Claims] 1. A pin-chuck type substrate holding device that holds a substrate by vacuum suction on the back side of the substrate, comprising: a plurality of air outlets provided on a chuck surface of a holder; and the plurality of air outlets. A blowout pipe that connects the outlet with the external space or the cylinder, a blowout amount control valve provided in the middle of the blowout tube, and a portion on the chuck surface of the holding base that can absorb the gas blown out from each of the blowout ports. a plurality of suction ports respectively provided in the substrate, a suction tube connecting the plurality of suction ports and a vacuum generation source, a suction amount adjustment valve provided in the middle of the suction tube, and a back surface of the substrate and the holding tube. a pressure sensor that detects the pressure in a microspace formed between the chuck surface of the table; and a control means that controls opening and closing of the blowout amount control valve and the suction amount control valve based on the output signal of the pressure sensor. A substrate holding device characterized by: 2. The substrate holding device according to claim 1, wherein the control means controls opening and closing of the blowout amount regulating valve and the suction amount regulating valve so that the pressure in the microspace becomes 50 [Torr] or more. 3. An air outlet and a suction port are provided in each space surrounded by four adjacent protrusions of the microspace, and the position of the air outlet is higher than the position of the suction port. The substrate holding device according to claim 1 or 2. 4. An exposure apparatus comprising the substrate holding device according to any one of claims 1 to 3.